CN106292786A - Voltage reduction method and decompression device thereof - Google Patents
Voltage reduction method and decompression device thereof Download PDFInfo
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- CN106292786A CN106292786A CN201510296318.3A CN201510296318A CN106292786A CN 106292786 A CN106292786 A CN 106292786A CN 201510296318 A CN201510296318 A CN 201510296318A CN 106292786 A CN106292786 A CN 106292786A
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Abstract
The present invention relates to a kind of voltage reduction method and decompression device thereof, described decompression device includes chamber, air extractor, and heat riser, by using air extractor and heat riser that the chamber being provided with plate is carried out blood pressure lowering warming temperature.Described voltage reduction method includes using air extractor to bleed to chamber chamber actual pressure to be reduced to vacuum pressure, uses heat riser to open a plurality of heating unit when dropping to during vacuum pressure and fall outside vacuum arc generation pressure limit with heating plate to process temperatures in chamber actual pressure, and uses heat riser to close a plurality of heating unit in chamber actual pressure when dropping to during vacuum pressure and in vacuum arc generation pressure limit.The present invention had both promoted manufacture of semiconductor efficiency and had reduced chamber construction cost, was also prevented securely from the generation of vacuum arc, the problem of damage thus the heating unit mentioned by efficiently solving in prior art bursts during chamber blood pressure lowering.
Description
Technical field
The present invention relates to voltage reduction method and decompression device thereof in a kind of semiconductor processing system, espespecially one is passed through
Will heat up device to be placed in chamber, make actual pressure send out between vacuum pressure and between vacuum arc dropping to
Time in raw pressure limit, by close a plurality of heating units of heat riser carry out blood pressure lowering method and
Decompression device.
Background technology
It is said that in general, semiconductor processing system is (such as a piece leaf formula (cluster) or online (in line) at present
Process system) substrate turnover chamber be generally only capable of for carrying out substrate loading or unloading operation, therefore, quasiconductor system
Journey system often needs the additional configuration chamber that is rapidly heated so that substrate is carried out warming temperature, thus causes processing procedure
The problem that efficiency declines and chamber construction cost increases.
Although the problems referred to above can be by being arranged at device for quickly elevating temperature in substrate turnover chamber, so that quickly rise
The configuration that temperature device carries out warming temperature to the substrate being arranged in substrate turnover chamber solves, but due to
Device for quickly elevating temperature uses radiation heating design, therefore device for quickly elevating temperature extremely easily makes at substrate turnover chamber
The period carrying out being depressurized to vacuum pressure operation with air extractor produces vacuum arc, thus causes heating unit
The problem of (such as infrared lamp etc.) explosion damage.
Summary of the invention
The purpose of the present invention is providing a kind of voltage reduction method, and concrete offer one uses air extractor and intensification
Device carries out blood pressure lowering warming temperature to the chamber at least provided with a plate, and described heat riser comprises a plurality of
Heating unit, described voltage reduction method includes:
Described chamber is bled described chamber actual pressure is reduced to vacuum gas by described air extractor
Pressure;
During described chamber actual pressure drops to vacuum pressure and outside vacuum arc generation pressure limit
Time, open a plurality of described heating unit of described heat riser, to be heated to by least one described plate
Process temperatures;And
Described chamber actual pressure is during dropping to vacuum pressure and between described vacuum arc generation pressure
In the range of time, close a plurality of described heating unit of described heat riser..
The present invention also can comprise techniques below feature:
Described vacuum arc generation pressure limit is 0.1torr~100torr.
Described vacuum arc generation pressure limit is 0.5torr~50torr.
Described each heating unit is more than 15mm with the ground distance of described chamber.
Described each heating unit is infrared lamp.
Described heat riser puts on the voltage of each heating unit between 220V~380V.
Described chamber is bled described chamber actual pressure is reduced to vacuum gas by described air extractor
The step of pressure includes:
Described chamber is bled by described air extractor with stagewise air suction mode, so that described chamber is actual
Air pressure piecewise drops to vacuum pressure.
When the described process temperatures of described chamber is more than particular value, carry out back pressure operation with nitrogen filling method.
When the described process temperatures of described chamber is less than particular value, carry out back pressure behaviour with dry air filling method
Make.
The purpose of the present invention is providing a kind of decompression device, specifically includes:
Chamber, described chamber is provided with at least one plate;
Air extractor, described chamber is bled by the described air extractor being communicated in described chamber, is used for dropping
Low described chamber actual pressure is to vacuum pressure;
Heat riser, described heat riser is arranged in described chamber and has a plurality of heating unit, being used for
In described chamber actual pressure during dropping to vacuum pressure and in vacuum arc generation pressure limit
Time close a plurality of described heating unit, and be used for dropping to vacuum pressure in described chamber actual pressure
Period and open a plurality of described heating unit, with by institute time outside described vacuum arc generation pressure limit
State at least one plate and be heated to process temperatures.
Described vacuum arc generation pressure limit is 0.1torr~100torr.
Described vacuum arc generation pressure limit is 0.5torr~50torr.
Described each heating unit is more than 15mm with the ground distance of described chamber.
Described each heating unit is infrared lamp.
Described heat riser puts on the voltage of described each heating unit between 220V~380V.
Described chamber is bled by described air extractor with stagewise air suction mode, so that described chamber is actual
Air pressure piecewise drops to described vacuum pressure.
When described process temperatures is more than particular value, described chamber carries out back pressure operation with nitrogen filling method.
When described process temperatures is less than particular value, described chamber carries out back pressure behaviour with dry air filling method
Make.
Enumerate preferred embodiment below in conjunction with the accompanying drawings and be further elucidated with the present invention.
Accompanying drawing explanation
Fig. 1 is according to decompression device schematic perspective view.
Fig. 2 is Fig. 1 decompression device generalized section along hatching A-A.
Fig. 3 is to use air extractor and heat riser that the chamber being provided with plate is carried out blood pressure lowering warming temperature
Voltage reduction method flow chart.
Fig. 4 is pressure and the corresponding relation figure one whether heating Fig. 2 chamber plate.
Fig. 5 is pressure and the corresponding relation figure two whether heating Fig. 2 chamber plate.
Fig. 6 is pressure and the corresponding relation figure three whether heating Fig. 2 chamber plate.
10-decompression device, 12-chamber, 13-plate, 14-air extractor, 16-heat riser, 17-heats
Unit, P-pressure, the T-time, F-OFF (stops heating), and N-ON (begins to warm up), P0-initial gas pressure,
P1-the first sets air pressure, P2-the second sets air pressure, P3-the three sets air pressure, D-ground distance
Detailed description of the invention
The present invention is further detailed explanation with specific embodiment below in conjunction with the accompanying drawings, is not this
Bright practical range is confined to this.
With reference to Fig. 1 and Fig. 2, decompression device 10 comprises chamber 12, air extractor 14, and heat riser
16.Chamber 12 can be common application at semiconductor processing system (such as piece leaf formula process system, an online system
Journey system, online piece of leaf (linear cluster) process system etc.) in for plate 13 turnover behaviour
Turnover chamber 12 on work, and can be used to arrange at least one plate 13 (as substrate, wafer and pallet it
Combinations etc., show two in Fig. 1, but are not limited), its involving chamber 12 designs in prior art
In have exposure more, therefore repeat no more in this.Air extractor 14 can be common application at semiconductor processing system
In vacuum pump in the vacuum pumping, and be communicated in chamber 12 so that chamber 12 to be bled, mat
To be used for reducing the actual pressure of chamber 12 to vacuum pressure, thus reach plate 13 can be under vacuum pressure
Enter the purpose in semiconductor processing system.Heat riser 16 is arranged in chamber 12 and has a plurality of adding
Hot cell 17, each heating unit 17 is preferably infrared lamp (such as quartz-iodine lamp etc.), but not by this
Limit, say, that as long as can be used to the firing equipment carrying out heating in vacuum environment, it can be all this
Invention is used.Based on above-mentioned, plate 13 can be added by heat riser 16 by radiant heating pattern
Heat and reach the purpose being rapidly heated, so that the temperature of plate 13 can reach the system needed for manufacture of semiconductor
Cheng Wendu.
With reference to the flow chart of Fig. 3, use air extractor 14 and heat riser 16 to being provided with plate 13
The voltage reduction method that chamber 12 carries out blood pressure lowering warming temperature comprises the steps of
Step 300: air extractor 14 chamber 12 is bled with by the air pressure of chamber 12 from actual pressure
It is reduced to vacuum pressure.
Step 302: heat riser 16 in chamber 12 actual pressure drop to vacuum pressure period and
During more than vacuum arc generation pressure limit maximum, open a plurality of heating unit 17 so that plate 13 to be entered
Row heating.
Step 304: heat riser 16 in chamber 12 actual pressure drop to vacuum pressure period and
Time in vacuum arc generation pressure limit, close a plurality of heating unit 17 to stop plate 13 is entered
Row heating.
Step 306: heat riser 16 in chamber 12 actual pressure drop to vacuum pressure period and
During less than vacuum arc generation pressure limit minima, open a plurality of heating unit 17, with by plate 13
It is heated to process temperatures.
It is described in detail for above-mentioned voltage reduction method, referring to Fig. 2, Fig. 3 and Fig. 4, first,
After plate 13 enters chamber 12, air extractor 14 can be bled chamber 12 so that chamber 12
Actual pressure can be from initial gas pressure P0(such as a normal atmosphere 760torr) drops to vacuum pressure (step
Rapid 300), for example, as shown in Figure 4, decompression device 10 can use air extractor 14 to take out with stagewise
The design that chamber 12 is bled by the mode of gas and plate 13 is heated by heat riser 16 simultaneously,
In more detail, air extractor 14 can first by the actual pressure of chamber 12 from initial gas pressure P0Drop to
One sets air pressure P1(such as 380torr) stops bleeding a period of time (as from time t afterwards1To time t2),
The most again the actual pressure of chamber 12 is set air pressure P from first1Continuous decrease is to setting air pressure less than the 3rd
The vacuum pressure of P3.In above-mentioned period, heat riser 16 can be from time t1To time t3Period opens multiple
Several heating units 17 are to heat plate 13, and (i.e. corresponding from the during time t3 to time t4
Two set air pressure P2Drop to the 3rd setting air pressure P3Period) to close a plurality of heating unit 17 right to stop
Plate 13 heats, and from time t4To time t5Period is (i.e. corresponding from the 3rd setting air pressure P3Decline
To setting air pressure P less than the 3rd3Vacuum pressure during) open a plurality of heating unit 17 with continue heating
Plate 13 to process temperatures;Wherein it is preferred to, second sets air pressure P2It is set to 15torr and (can be considered this
Embodiment vacuum arc generation pressure limit maximum);Preferably, the 3rd setting air pressure P3 is set to 0.5torr
(can be considered this embodiment vacuum arc generation pressure limit minima), say, that preferably, this is real
Executing example vacuum arc generation pressure limit is 0.5torr~15torr, but is not limited, its range set value
Can be varied from according to the actually used demand of decompression device 10, for example, in actual applications, this
Inventing used vacuum arc generation pressure limit can be 0.1torr~100torr, and can be preferably
0.5torr~50torr.
It is noted that decompression device 10 also can use air suction process and the liter carrying out air extractor 14 in turn
The design of the heating operation of temperature device 16 is to promote the decompression device 10 change bullet on blood pressure lowering heating operation
Property, for example, refer to Fig. 5, decompression device 10 can use first opens air extractor 14 to chamber 12
Followed by the design using heat riser 16 that plate 13 is heated after bleeding, in more detail,
Air extractor 14 can first by chamber 12 actual pressure from initial gas pressure P0Drop to the 3rd setting air pressure P3
Afterwards (i.e. from time t6To time t7) stop bleeding a period of time (i.e. from time t7To time t8), then
Again chamber 12 actual pressure is set air pressure P from the 3rd3Continue to deteriorate to less than the 3rd setting air pressure P3Vacuum
Air pressure.In above-mentioned period, heat riser 16 can be from starting to time t8Period is (i.e. corresponding from initial gas
Pressure P0 drops to the 3rd setting air pressure P3Period) close a plurality of heating unit 17, and from time t8Arrive
Time t9Period opens a plurality of heating units 17 to directly heat plate 13 to process temperatures.
In addition, refer to Fig. 6, it is by being proposed pressure according to another embodiment of the present invention and being
No heating Fig. 2 chamber 12 plate 13 corresponding relation figure, in this embodiment, decompression device 10 can use
Chamber 12 is bled and uses heat riser 16 to heat plate 13 simultaneously by air extractor 14
Design, in more detail, air extractor 14 can first by chamber 12 actual pressure from initial gas pressure P0Decline
Air pressure P is set to second2Afterwards (i.e. from starting to time t10) stop bleeding a period of time (i.e. from time t10
To time t11), the most again the actual pressure of chamber 12 is set air pressure P from second2Drop to the 3rd setting
Air pressure P3(i.e. from time t11To time t12) and set air pressure P from the 3rd3Continue to deteriorate to less than the 3rd to set
Determine air pressure P3Vacuum pressure.In above-mentioned period, heat riser 16 is can be from starting to time t11Period
(i.e. corresponding from initial gas pressure P0Drop to the second setting air pressure P2Period) open a plurality of heating unit 17
To heat plate 13, and from time t11To time t12Period is (i.e. corresponding from the second setting air pressure P2Decline
Air pressure P is set to the 3rd3Period) close a plurality of heating unit 17, and from time t12To time t13
Period is (i.e. corresponding from the 3rd setting air pressure P3Deteriorate to less than the 3rd setting air pressure P3Phase of vacuum pressure
Between) open a plurality of heating unit 17 to heat plate 13 to process temperatures.As for use above-mentioned which kind of set
Meter, can be according to decompression device 10 practical application request depending on.
As shown in Figure 4, chamber 12 is bled so that chamber 12 is actual at above-mentioned air extractor 14
Air pressure drops to vacuum arc generation pressure limit maximum (i.e. second sets air pressure P2) from initial gas pressure P0
During, heat riser 16 can open a plurality of heating unit 17 with heating plate 13 (step 302),
And in order to avoid the generation of vacuum arc, continue chamber 12 is bled so that chamber at air extractor 14
Room 12 actual pressure drops to from vacuum arc generation pressure limit maximum (i.e. second sets air pressure P2)
The period of vacuum arc generation pressure limit minima (the i.e. the 3rd sets air pressure P3), heat riser 16 can
Close a plurality of heating unit 17 accordingly to stop plate 13 is heated (step 304).Consequently, it is possible to
By above-mentioned heat riser 16 in chamber 12 actual pressure in vacuum arc generation pressure limit (i.e. from
Second sets air pressure P2 to the 3rd sets air pressure P3) time close the design of a plurality of heating unit 17, blood pressure lowering
Equipment 10 can be prevented securely from the generation of vacuum arc, and then efficiently solves in prior art mentioned
Heating unit burst during chamber blood pressure lowering damage problem.
It follows that after chamber 12 actual pressure deteriorates to less than vacuum arc generation pressure limit minima,
Now, if plate 13 temperature is still less than process temperatures, then heat riser 16 can be again turned on a plurality of
Heating unit 17 is to continue to heat plate 13 (step 306), and air extractor 14 can continue chamber
12 bleed, until chamber 12 actual pressure drops to vacuum pressure and plate 13 temperature rises to system
Till Cheng Wendu, so can complete the blood pressure lowering heating operation of decompression device 10 and can proceed with plate
13 enter the operation of next manufacture of semiconductor chamber via chamber 12.On the other hand, if above-mentioned plate
13 temperature have equalized to process temperatures, then can omit step 306, say, that in the case, as long as
By the time chamber 12 is bled so that chamber 12 actual pressure drops to vacuum pressure by air extractor 14,
Decompression device 10 can directly perform via chamber 12, plate 13 is entered next manufacture of semiconductor chamber
Operation, and need not carry out open heating unit 17 heating operation.
In actual applications, as in figure 2 it is shown, each heating unit 17 is excellent with the ground distance D of chamber 12
Selection of land is more than 15mm to be more prevented securely from the generation of vacuum arc.It addition, from the foregoing, fall
Pressure equipment 10 can be by above-mentioned voltage reduction method it is thus possible to be effectively prevented the generation of vacuum arc, therefore,
Heat riser 16 can put on the voltage of each heating unit 17 can increase further (such as between
Between 220V~380V, but it is not limited), thus effectively promote the efficiency of heating surface of heat riser 16.
In addition, in order to avoid chamber 12 inner structural members (such as direct reflection sheet etc.) further
With back pressure gas generation chemical reaction and the situation of oxidation corrosion during follow-up chamber 12 carries out back pressure
Occurring, if above-mentioned process temperatures is more than particular value (such as 200 DEG C), decompression device 10 can use with nitrogen
Gas filling method carries out the back pressure operation of chamber 12;Otherwise, if above-mentioned process temperatures is less than above-mentioned specific
During value, decompression device 10 is then the back pressure operation that can use and carry out chamber 12 with dry air filling method.
In sum, voltage reduction method of the present invention is by using air extractor 14 and heat riser 16 at least
The chamber 12 being provided with a plate 13 carries out blood pressure lowering warming temperature, and described heat riser 16 comprises a plurality of adding
Hot cell 17, described voltage reduction method comprises is bled to described chamber 12 by described air extractor 14,
Described chamber 12 is made to be down to vacuum pressure by actual pressure;When described chamber 12 is from described actual pressure
When being down to described vacuum pressure and fall outside vacuum arc generation pressure limit, open and be placed in described chamber 12
The a plurality of described heating unit 17 of the described heat riser 16 arranged is to heat at least one described plate 13
To process temperatures;And described chamber 12 drops to described vacuum pressure and between institute from described actual pressure
When stating in vacuum arc generation pressure limit, close the institute of the described heat riser 16 that described chamber 12 is arranged
State multiple heating unit 17.Decompression device 10 of the present invention comprises chamber 12, air extractor 14, and heats up
Device 16.Described chamber 12 is at least provided with a plate 13.Described air extractor 14 is communicated in described chamber
12 to bleed to described chamber 12, is used for described chamber 12 actual pressure is reduced to vacuum pressure.
Described heat riser 16 is arranged in described chamber 12 and has a plurality of heating unit 17, is used in described
Actual pressure described in chamber 12 is during dropping to described vacuum pressure and at vacuum arc generation pressure model
Close a plurality of described heating unit 17 when enclosing interior, and be used in actual pressure described in described chamber 12
Plural number is opened time during dropping to described vacuum pressure and outside described vacuum arc generation pressure limit
Individual described heating unit 17, to heat at least one described plate 13 to process temperatures.
Compared to prior art, the present invention uses and will heat up the design that device 16 is directly built in chamber 12
And heat riser 16 closes plural number when chamber 12 actual pressure is in vacuum arc generation pressure limit
The blood pressure lowering of individual heating unit 17 heats up and designs, consequently, it is possible to the present invention not only can omit the chamber that is rapidly heated
The additional configuration of 12 thus promote manufacture of semiconductor efficiency and reduce chamber 12 construction cost, also can cut simultaneously
Prevent the generation of vacuum arc on the spot, thus efficiently solve heating unit 17 mentioned in prior art
Burst during chamber 12 blood pressure lowering the problem damaged.
The foregoing is only presently preferred embodiments of the present invention, thus all according to the structure described in present patent application scope
Make, equivalence change that feature and principle are done or modify, be included in the protection domain of present patent application.
Claims (18)
1. a voltage reduction method, it uses air extractor and heat riser to the chamber at least provided with a plate
Carrying out blood pressure lowering warming temperature, described heat riser comprises a plurality of heating unit, described voltage reduction method bag
Include:
Described chamber is bled described chamber actual pressure is reduced to vacuum gas by described air extractor
Pressure;
During described chamber actual pressure drops to vacuum pressure and outside vacuum arc generation pressure limit
Time, open a plurality of described heating unit of described heat riser, to be added by least one described plate
Heat is to process temperatures;And
Described chamber actual pressure is during dropping to vacuum pressure and between described vacuum arc generation pressure model
When enclosing interior, close a plurality of described heating unit of described heat riser.
2. a kind of voltage reduction method, it is characterised in that described vacuum arc generation pressure model
Enclose for 0.1torr~100torr.
3. a kind of voltage reduction method, it is characterised in that described vacuum arc generation pressure model
Enclose for 0.5torr~50torr.
4. a kind of voltage reduction method, it is characterised in that described each heating unit is with described
The ground distance of chamber is more than 15mm.
5. a kind of voltage reduction method, it is characterised in that described each heating unit is infrared
Line fluorescent tube.
6. a kind of voltage reduction method, it is characterised in that described heat riser puts on each
The voltage of heating unit is between 220V~380V.
7. a kind of voltage reduction method, it is characterised in that described air extractor is to described chamber
Carry out bleeding to include the step that described chamber actual pressure is reduced to vacuum pressure:
Described chamber is bled by described air extractor with stagewise air suction mode, so that described chamber is actual
Air pressure piecewise drops to vacuum pressure.
8. a kind of voltage reduction method, it is characterised in that also include:
When the described process temperatures of described chamber is more than particular value, carry out back pressure operation with nitrogen filling method.
9. a kind of voltage reduction method, it is characterised in that also include:
When the described process temperatures of described chamber is less than particular value, carry out back pressure behaviour with dry air filling method
Make.
10. a decompression device, it is characterised in that including:
Chamber, described chamber is provided with at least one plate;
Air extractor, described chamber is bled by the described air extractor being communicated in described chamber, is used for dropping
Low described chamber actual pressure is to vacuum pressure;
Heat riser, described heat riser is arranged in described chamber and has a plurality of heating unit, being used for
In described chamber actual pressure during dropping to vacuum pressure and between vacuum arc generation pressure limit
Close a plurality of described heating unit time interior, and be used for declining the most pure virginity in described chamber actual pressure
A plurality of described heating is opened single time during air pressure and outside described vacuum arc generation pressure limit
Unit, to be heated to process temperatures by least one plate described.
11. a kind of decompression devices as claimed in claim 10, it is characterised in that described vacuum arc generation pressure
Scope is 0.1torr~100torr.
12. a kind of decompression devices as claimed in claim 11, it is characterised in that described vacuum arc generation pressure
Scope is 0.5torr~50torr.
13. a kind of decompression devices as claimed in claim 10, it is characterised in that described each heating unit and institute
State the ground distance of chamber more than 15mm.
14. a kind of decompression devices as claimed in claim 10, it is characterised in that described each heating unit is red
Outside line fluorescent tube.
15. a kind of decompression devices as claimed in claim 10, it is characterised in that described heat riser puts on institute
State the voltage of each heating unit between 220V~380V.
16. a kind of decompression devices as claimed in claim 10, it is characterised in that described air extractor is with stagewise
Described chamber is bled by air suction mode, so that described chamber actual pressure piecewise drops to described
Vacuum pressure.
17. a kind of decompression devices as claimed in claim 10, it is characterised in that when described process temperatures is more than spy
During definite value, described chamber carries out back pressure operation with nitrogen filling method.
18. a kind of decompression devices as claimed in claim 10, it is characterised in that when described process temperatures is less than spy
During definite value, described chamber carries out back pressure operation with dry air filling method.
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JP2000292480A (en) * | 1999-03-31 | 2000-10-20 | Seiko Epson Corp | Thermostatic bath |
CN101170061A (en) * | 2007-11-23 | 2008-04-30 | 苏州科技学院 | A making method for nano silicon thin film |
CN101748393A (en) * | 2009-12-16 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating control method of production line equipment and device |
CN102169811A (en) * | 2010-01-27 | 2011-08-31 | 东京毅力科创株式会社 | Substrate heating apparatus, substrate heating method and substrate processing system |
CN102360045A (en) * | 2011-06-21 | 2012-02-22 | 北京圣涛平北科检测技术有限公司 | Thermal vacuum test method for power device |
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2015
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2000292480A (en) * | 1999-03-31 | 2000-10-20 | Seiko Epson Corp | Thermostatic bath |
CN101170061A (en) * | 2007-11-23 | 2008-04-30 | 苏州科技学院 | A making method for nano silicon thin film |
CN101748393A (en) * | 2009-12-16 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating control method of production line equipment and device |
CN102169811A (en) * | 2010-01-27 | 2011-08-31 | 东京毅力科创株式会社 | Substrate heating apparatus, substrate heating method and substrate processing system |
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