CN106232351A - Glass laminate and the manufacture method of electronic device - Google Patents
Glass laminate and the manufacture method of electronic device Download PDFInfo
- Publication number
- CN106232351A CN106232351A CN201580022073.3A CN201580022073A CN106232351A CN 106232351 A CN106232351 A CN 106232351A CN 201580022073 A CN201580022073 A CN 201580022073A CN 106232351 A CN106232351 A CN 106232351A
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- CN
- China
- Prior art keywords
- inorganic layer
- glass
- glass substrate
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000005340 laminated glass Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 324
- 239000011521 glass Substances 0.000 claims abstract description 244
- 230000008569 process Effects 0.000 claims description 58
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 239000003513 alkali Substances 0.000 claims description 26
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 5
- 150000002602 lanthanoids Chemical class 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 239000010410 layer Substances 0.000 description 294
- 239000010408 film Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000000463 material Substances 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000013007 heat curing Methods 0.000 description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910003638 H2SiF6 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004567 concrete Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 description 2
- -1 can enumerate Li Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021564 Chromium(III) fluoride Inorganic materials 0.000 description 1
- 229910021582 Cobalt(II) fluoride Inorganic materials 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- 229910005270 GaF3 Inorganic materials 0.000 description 1
- 229910021620 Indium(III) fluoride Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910021570 Manganese(II) fluoride Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910021587 Nickel(II) fluoride Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910018096 ScF3 Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 229910021525 ceramic electrolyte Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- CTNMMTCXUUFYAP-UHFFFAOYSA-L difluoromanganese Chemical compound F[Mn]F CTNMMTCXUUFYAP-UHFFFAOYSA-L 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- OEKDNFRQVZLFBZ-UHFFFAOYSA-K scandium fluoride Chemical compound F[Sc](F)F OEKDNFRQVZLFBZ-UHFFFAOYSA-K 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003283 slot draw process Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B40/00—Preventing adhesion between glass and glass or between glass and the means used to shape it, hold it or support it
- C03B40/02—Preventing adhesion between glass and glass or between glass and the means used to shape it, hold it or support it by lubrication; Use of materials as release or lubricating compositions
- C03B40/033—Means for preventing adhesion between glass and glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
It is an object of the invention to provide a kind of glass laminate that can be easily peeled off glass substrate.The present invention relates to a kind of glass laminate, it possesses: the support substrate of band inorganic layer, and it has support substrate and is arranged in the inorganic layer on above-mentioned support substrate；Strippingly being layered in the glass substrate on above-mentioned inorganic layer, above-mentioned inorganic layer comprises: containing F containing F inorganic layer.
Description
Technical field
The present invention relates to the manufacture method of glass laminate and electronic device.
Background technology
In recent years, the electronic device (electronics such as solaode (PV), liquid crystal panel (LCD), organic EL panel (OLED)
Device) slimming, lightweight carry out, the thin plateization of glass substrate used in these electronic devices is carried out.Another
Aspect, due to thin plate during the intensity deficiency of glass substrate, in the manufacturing process of electronic device, the operability of glass substrate
Reduce.
Therefore, recently, in order to tackle the problems referred to above, it is proposed that following method: prepare the support glass at band inorganic thin film
Inorganic thin film on be laminated with the duplexer of glass substrate, the glass substrate of duplexer is implemented after the manufacture of element processes,
From duplexer separation of glasses substrate (patent documentation 1).
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2011-184284 publication
Summary of the invention
The problem that invention is to be solved
The present inventor etc. in patent documentation 1 concrete record with the inorganic thin film being made up of metal-oxide
The duplexer being configured with glass substrate on the inorganic thin film of support glass is studied, and result specify that existence cannot be from stacking
Body peels off the situation of glass substrate.
The present invention completes in view of the above circumstances, it is therefore intended that provide a kind of glass that can be easily peeled off glass substrate
Glass duplexer.
For solving the scheme of problem
The present inventor etc. conduct in-depth research to reach above-mentioned purpose, it was found that by supporting shape on substrate
Become specific inorganic layer, it is possible to be easily peeled off glass substrate, thus complete the present invention.
That is, the present invention provides following (1)～(10).
(1) a kind of glass laminate, it has: the support substrate of band inorganic layer, it has support substrate and is arranged in
State the inorganic layer supported on substrate；Strippingly being layered in the glass substrate on above-mentioned inorganic layer, above-mentioned inorganic layer comprises: contain
Have F containing F inorganic layer.
(2) a kind of glass laminate, it possesses support substrate, inorganic layer, fragile layer and glass substrate successively, above-mentioned inorganic
Layer comprise: containing F containing F inorganic layer, above-mentioned fragile layer is the inorganic layer containing Al and Si, Al's Yu Si in above-mentioned fragile layer
The ratio (Y/X) of the atomic ratio Y (Al/Si) the atomic ratio X (Al/Si) relative to Al Yu Si in above-mentioned glass substrate is more than 1.2.
(3) according to the glass laminate described in above-mentioned (2), wherein, peel strength when peeling off above-mentioned glass substrate is
2.0N/25mm below.
(4) according to the glass laminate according to any one of above-mentioned (1)～(3), wherein, the above-mentioned inorganic layer containing F contains choosing
At least one in the group of free metal fluoride and fluorine blended metal oxide composition.
(5) according to the glass laminate described in above-mentioned (4), wherein, the fusing point of above-mentioned metal fluoride is more than 800 DEG C.
(6) according to the glass laminate described in above-mentioned (4) or (5), wherein, above-mentioned metal fluoride comprise select free alkali gold
At least one in the group of genus, alkaline-earth metal, Sc, Y, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Ga, In and lanthanide series composition
Element.
(7) according to the glass laminate described in above-mentioned (4), wherein, above-mentioned fluorine blended metal oxide is Fluorin doped oxidation
Stannum.
(8) according to the glass laminate according to any one of above-mentioned (1)～(7), wherein, the rough surface of above-mentioned inorganic layer
Degree is below 2nm.
(9) according to the glass laminate according to any one of above-mentioned (1)～(8), wherein, above-mentioned support substrate is glass
Plate.
(10) manufacture method of a kind of electronic device, it possesses following operation: component formation process, in above-mentioned (1)～(9)
According to any one of being on the surface of opposition side with above-mentioned inorganic layer side of the above-mentioned glass substrate that possesses of glass laminate
Form electronic device component, thus obtain the duplexer of having electronic device component；Separation circuit, from above-mentioned having electronic device
Peel off above-mentioned inorganic layer and above-mentioned support substrate with the duplexer of component, thus obtain that there is above-mentioned glass substrate and above-mentioned electronics
The electronic device of device component.
The effect of invention
According to the present invention it is possible to provide the glass laminate that can be easily peeled off glass substrate.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the 1st scheme of the glass laminate illustrating the present invention.
Fig. 2 is the schematic cross-section of the 2nd scheme of the glass laminate illustrating the present invention.
In the suitable embodiments of (A) of Fig. 3 and manufacture method that (B) is the electronic device illustrating the present invention in order
The schematic cross-section of each operation.
Detailed description of the invention
Hereinafter, with reference to the accompanying drawings of the glass laminate of the present invention and the suitable way of the manufacture method of electronic device, but
The present invention is not limited to following embodiment, without departing from the scope of the invention, and can be to following enforcement
Mode various deformation and displacement in addition.
It should be noted that in this specification, " weight % " and " quality % ", " weight percent " and " quality percentage "
Meaning is the most identical.
Hereinafter, the suitable scheme (the 1st scheme and the 2nd scheme) of glass laminate is described the most in detail, afterwards, for use
The suitable scheme of the manufacture method of the electronic device of this glass laminate is described in detail.
[glass laminate (the 1st scheme and the 2nd scheme)]
Fig. 1 is the schematic cross-section of the 1st scheme of the glass laminate illustrating the present invention.
As it is shown in figure 1, the glass laminate 10 as the 1st scheme has: comprise support substrate 12 and the band of inorganic layer 14
The support substrate 16 of inorganic layer and glass substrate 18.
In glass laminate 10, by the 1st interarea 14a (inorganic layer 14 of the inorganic layer 14 supporting substrate 16 of band inorganic layer
With support substrate 12 side and be in the surface of opposition side) and the 1st interarea 18a (inorganic layer of glass substrate 18 of glass substrate 18
The surface of 14 sides) as lamination surface, the support substrate 16 of band inorganic layer and glass substrate 18 strippingly stacking.
That is, the one side of inorganic layer 14 is fixed in layer and its another side and the 1st of glass substrate 18 the supporting substrate 12
Interarea 18a contacts, and inorganic layer 14 is the most closely sealed with the interface of glass substrate 18.In other words, inorganic layer 14 is to glass substrate
The 1st interarea 18a of 18 possesses release performance.
Use glass laminate 10 until component formation process described later.That is, use glass laminate 10 until at glass
2nd interarea 18b of substrate 18 (being in the surface of opposition side with inorganic layer 14 side of glass substrate 18) is upper forms liquid crystal display dress
Till the electronic device component such as putting.
Afterwards, the layer supporting substrate 16 of band inorganic layer is stripped in the interface with the layer of glass substrate 18, carries inorganic
The layer supporting substrate 16 of layer is formed without the component constituting electronic device.On the support substrate 16 of the band inorganic layer separated permissible
Glass substrate 18 that stacking is new and recycle as new glass laminate 10.
In the present invention, above-mentioned fixing and above-mentioned (strippable) is closely sealed in peel strength (that is, the stress needed for stripping) side
There is difference in face, fixes and refer to that peel strength is big for closely sealed.Specifically, inorganic layer 14 and the boundary supporting substrate 12
The peel strength in face is more than the peel strength of the inorganic layer 14 in glass laminate 10 with the interface of glass substrate 18.
Closely sealed refer to it addition, strippable, the face fixed can not be made strippable while to shell with being peeling
From.That is, refer in glass laminate 10, in closely sealed face when carrying out glass substrate 18 and support operation that substrate 12 separates
The interface of glass substrate 18 (inorganic layer 14 with) is peeling, is not peeling in fixing face.Therefore, if carrying out glassy layer
Stack 10 is separated into glass substrate 18 and supports the operation of substrate 12, then glass laminate 10 is separated into glass substrate 18 and band
Both support substrates 16 of inorganic layer.
Fig. 2 is the schematic cross-section of the 2nd scheme of the glass laminate illustrating the present invention.
As in figure 2 it is shown, the glass laminate 11 as the 2nd scheme possesses support substrate 12, inorganic layer 14, fragile layer successively
26 and glass substrate 18, between the inorganic layer 14 and the glass substrate 18 that support substrate 16 of band inorganic layer, there is fragile layer 26.
Detailed content is described below, has the glass laminate 11 of fragile layer 26 by using the glass laminate 10 as the 1st scheme
Expose under the high temperature conditions (such as more than 400 DEG C) and obtain.
Hereinafter, enter first against the support substrate 16 of band inorganic layer and glass substrate 18 constituting glass laminate 10 (11)
Row narration in detail, the manufacturing step for glass laminate 10 (11) is described in detail afterwards.Detailed narration in this step
In, illustrate also for the fragile layer 26 constituting glass laminate 11.
(the support substrate of band inorganic layer)
Support substrate 16 with inorganic layer possesses support substrate 12 and configuration (fixing) inorganic layer 14 in its surface.Nothing
Machine layer 14 is arranged in the support substrate 16 of band inorganic layer in the way of the most closely sealed with glass substrate 18 described later
Outside.
Hereinafter, illustrate for the scheme supporting substrate 12 and inorganic layer 14.
＜ supports substrate ＞
Support the substrate that substrate 12 is discussed further below: there is the 1st interarea and the 2nd interarea, with the nothing being arranged on the 1st interarea
Machine layer 14 synergism, supports and reinforced glass substrate 18, (manufactures electronic device component in component formation process described later
Operation) in the manufacture of electronic device component time prevent the deformation of glass substrate 18, scuffing, breakage etc..
As supporting substrate 12, such as, can use the metallic plates etc. such as glass plate, plastic plate, rustless steel (SUS) plate.For
Support substrate 12, when component formation process is with heat treatment, preferably by the material little with the difference of the linear expansion coefficient of glass substrate 18
Material is formed, and is more preferably formed by the material identical with glass substrate 18, supports substrate 12 and is preferably glass plate.Support substrate 12 special
The glass plate that You Xuanwei not formed by the glass material identical with glass substrate 18.
The thickness supporting substrate 12 can be thicker than glass substrate 18 described later, it is also possible to thinner than glass substrate 18.Preferably
It is that the thickness of thickness based on glass substrate 18, the thickness of inorganic layer 14 and glass laminate described later 10 (11) selects
Support the thickness of substrate 12.
Such as, it is to design in order to the substrate of thickness 0.5mm is processed in existing component formation process, and glass
In the case of the thickness of glass substrate 18 and the thickness sum of inorganic layer 14 are 0.1mm, the thickness supporting substrate 12 is set to
0.4mm.The thickness supporting substrate 12 is preferably 0.2～5.0mm in normal circumstances.
Supporting in the case of substrate 12 is glass plate, for the reason such as easily operating, be not easily broken, the thickness of glass plate is excellent
Elect more than 0.08mm as.It addition, expectation moderately bends and does not ruptures when peeling off after being formed for electronic device component
The reason of such rigidity, the thickness of glass plate is preferably below 1.0mm.
Support substrate 12 and the average coefficient of linear expansion (hereinafter referred to as " average line at 25～300 DEG C of glass substrate 18
The coefficient of expansion ") difference be preferably 500 × 10-7/ DEG C below, more preferably 300 × 10-7/ DEG C below, more preferably 200
×10-7/ DEG C below.If difference is excessive, then there is glass laminate 10 (11) violent warpage during the cooling of the heating in component formation process
Worry.When the material of glass substrate 18 is identical with the material supporting substrate 12, can suppress to produce such problem.
It should be noted that in this specification, average coefficient of linear expansion can be surveyed according to JIS R3102 (nineteen ninety-five)
Fixed.
＜ inorganic layer ＞
Inorganic layer 14 be in glass laminate 10 configure (fix) support substrate 12 interarea on and and glass substrate
The layer that the 1st interarea 18a of 18 directly contacts.Such inorganic layer 14 comprise containing F containing F inorganic layer.Inorganic layer 14 can be only
It is made up of the inorganic layer containing F, it is also possible to for containing the multilamellar containing the inorganic layer beyond F inorganic layer.It should be noted that inorganic layer 14
During for multilamellar, being not particularly limited containing the position beyond F inorganic layer on the thickness direction of inorganic layer 14, but preferably inorganic containing F
Layer is the top layer that the 1st interarea 18a with glass substrate 18 contacts.
It addition, the inorganic layer containing F that inorganic layer 14 contains preferably comprises the free metal fluoride of choosing and Fluorin doped burning
At least one in the group of thing composition.
When inorganic layer 14 is containing fluorine blended metal oxide, as fluorine blended metal oxide, such as, can enumerate: fluorine is mixed
Miscellaneous stannum oxide, Fluorin doped zinc oxide, Fluorin doped titanium oxide, Fluorin doped aluminium oxide, Fluorin doped silicon oxide, Fluorin doped quartz etc., it
Can be used singly or in combination of two or more.Among them, preferably fluorine-doped tin oxide.
When inorganic layer 14 is containing metal fluoride, from the aspect that the fissility of glass substrate 18 is more excellent, preferably without
The chemical stability of the metal fluoride that machine layer 14 contains is high.Index as chemical stability, it is possible to use metal fluoride
Fusing point.
That is, the fusing point of metal fluoride is preferably more than 800 DEG C, more preferably more than 900 DEG C, and more preferably 1000
More than DEG C.
It should be noted that inorganic layer 14 can contain metal fluoride of more than two kinds.
The composition of the metal fluoride that inorganic layer 14 contains is not particularly limited, more excellent from the fissility of glass substrate 18
Aspect set out, preferably comprise and select free alkali metal, alkaline-earth metal, Sc, Y, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Ga, In
And at least one in the group of lanthanide series composition.
Herein, as alkali metal, such as, can enumerate Li, Na, K, Rb, Cs.
It addition, as alkaline-earth metal, such as Mg, Ca, Sr, Ba can be enumerated.
It addition, lanthanide series is the element from La to Lu, such as, can enumerate La, Ce, Pr, Nd, Pm, Sm etc..
It should be noted that by change above-mentioned metal/fluorine element ratio, it is possible to adjust inorganic layer 14 surface OH radix,
Surface flatness, controls the closing force between inorganic layer 14 and glass substrate 18.
A part for the metal fluoride that inorganic layer 14 contains can be oxidized.That is, inorganic layer 14 can comprise oxygen former
Son (oxygen element) (O).
It should be noted that by metal fluoride, the addition of oxygen atom, it is possible to adjust the OH base on inorganic layer 14 surface
Number, surface flatness, control the closing force between inorganic layer 14 and glass substrate 18.
More specifically, as the inorganic layer 14 metal fluoride containing metal fluoride, such as, RF, R can be enumerated '
F2、ScF3、VF3、CrF3、MnF2、FeF3、CoF2、NiF2、CuF2、ZnF2、AlF3、GaF3、InF3And LF3Deng.Herein, R refers to alkali
Metal, R ' refers to that alkaline-earth metal, L refer to lanthanide series.
The average coefficient of linear expansion of inorganic layer 14 is not particularly limited, and uses glass plate as when supporting substrate 12, and it is put down
All linear expansion coefficients are preferably 10 × 10-7～200 × 10-7/℃.If this scope, then the average line with glass plate expands system
The difference of number diminishes, it is possible to the glass substrate 18 under suppression hot environment is inclined with the position supporting substrate 16 of band inorganic layer further
Move.
Inorganic layer 14 preferably comprises at least one in the group selecting free metal fluoride and fluorine blended metal oxide composition
As main component.Herein, so-called main component refers to, the total content of metal fluoride is 90 matter relative to inorganic layer 14 total amount
More than amount more than %, preferably 98 mass %, more than more preferably 99 mass %, more than particularly preferably 99.999 mass %.
The thickness of inorganic layer 14 is not particularly limited, from maintain marresistance aspect, preferably 5～5000nm,
More preferably 10～500nm.
Inorganic layer 14 illustrates the most as a single layer but it also may be the stacking of more than 2 layers.It it is the layer of more than 2 layers
Time folded, each layer can be different composition.In this case, " thickness of inorganic layer " refers to the gross thickness of all layers.
Inorganic layer 14 is arranged at the interarea entirety supporting substrate 12 the most as shown in Figure 1 but it also may not
Damage and in the range of effect of the present invention, be arranged at the part supported on substrate 12 surface.
The surface roughness (Ra) of the 1st interarea 14a of inorganic layer 14 be preferably below 2.0nm, more preferably 1.2nm with
Under.Lower limit is not particularly limited, and preferably 0.If above-mentioned scope, then become more preferable with the adaptation of glass substrate 18,
The position skew etc. with glass substrate 18 can be suppressed further, and the fissility of glass substrate 18 is the most excellent.
Ra is measured according to JIS B 0601 (calendar year 2001 revision).
But, if simply inorganic layer 14 contains only containing F inorganic layer, then can there is laminated glass substrate on inorganic layer 14
The situation of stackability (stacking easiness) difference when 18.That is, there is following situation: though overlapping inorganic layer 14 and glass substrate 18
Also cannot be the most closely sealed, even and if carry out mechanical compaction also cannot be closely sealed or be easily peeled off.
Therefore, in inorganic layer 14, preferably the water contact angle of the 1st interarea 14a of laminated glass substrate 18 is set to 0～40 °.
Thus, inorganic layer 14 is excellent with the stackability of glass substrate 18.
It should be noted that water contact angle is according to JIS R 3257:1999, commercially available contact angle meter is used to measure.
Manufacture method ＞ supporting substrate of ＜ band inorganic layer
As supporting the method forming inorganic layer 14 on substrate 12, such as, the PVD (physics such as vapour deposition method be may be appropriately used
Vapour deposition (Physical Vapor Deposition)) method；The CVD such as thermal cvd, plasma CVD method (sink by chemical gaseous phase
Long-pending (Chemical Vapor Deposition)) method；Deng, it addition, manufacturing condition suitably selects according to the material used
Suitable condition.
Then, formed after inorganic layer 14, be preferable to carry out controlling the water contact angle of the 1st interarea 14a of inorganic layer 14 be 0～
The process of 40 °.As such process, such as, can enumerate hydrophilicity-imparting treatment, as its concrete example, can enumerate alkali process,
Cement Composite Treated by Plasma, UV process etc., preferably alkali process.
Process as alkali, such as, can enumerate the process making alkali treatment fluid contact with the 1st interarea 14a of inorganic layer 14.
The alkali treatment fluid used in processing as alkali, such as, preferably comprise the molten of the alkali such as sodium hydroxide, potassium hydroxide, ammonia
Liquid.The pH of alkali treatment fluid is more than 7, preferably 8～14.
The method processed as alkali, such as, can enumerate: uses aerosol apparatus etc. that alkali treatment fluid is blown into inorganic layer 14
Method on 1st interarea 14a；The substrate 16 that supports making band inorganic layer is immersed in the method etc. in alkali treatment fluid.
It should be noted that after alkali processes, be rinsed with pure water, make the 1st interarea 14a of inorganic layer 14 with air knife etc.
It is dried.
It should be noted that takes care of band inorganic layer in an atmosphere supports substrate 16 thus the water contact angle of the 1st interarea 14a
Such as when rising to the scope of 50～150 °, there is the situation of inorganic layer 14 and the stackability difference of glass substrate 18.
It is therefore preferable that implement to control the water contact angle of the 1st interarea 14a of inorganic layer 14 be 0～40 ° process it
After, make glass substrate 18 stacking the most at short notice.Limit the most especially from implementing above-mentioned process to the time carrying out stacking
System, preferably within 1 hour, more preferably within 30 minutes.It addition, after implementing above-mentioned process, take care of to stacking in an atmosphere
When time before is elongated, the foreign body such as dust in atmosphere is adsorbed in surface, also has the worry that stackability is deteriorated.
It should be noted that in addition, as required, in order to the table being formed at the inorganic layer 14 supported on substrate 12
Face character (such as surface roughness Ra) is controlled, it is possible to implement the surface of inorganic layer 14 carries out the process of grinding, as
Such process, such as, can enumerate grinding, ion sputtering process etc..
(glass substrate)
As glass substrate 18, on the basis of oxide, use and at least contain SiO2And Al2O3Glass plate.That is, glass
Substrate 18 at least contains Si (element silicon) and Al (aluminium element).
As above-mentioned glass plate, such as, can enumerate containing SiO2As main component (most compositions) and then contain
Al2O3、B2O3, MgO, CaO, SrO, BaO etc. are as the glass plate of other compositions.Now, as being only second to SiO2Composition, preferably
Al2O3.That is, in glass substrate 18, preferably in addition to O (oxygen element), most the 1st element of content is Si, and content is only second to
2nd element of 1 element is Al.
As the glass plate used in such glass substrate 18, such as, can enumerate alkali-free glass plate, concrete as it
Example, represents with the quality percentage of oxide benchmark, can enumerate the alkali-free glass plate containing following composition: SiO2: 54～
73%, Al2O3: 10～23%, B2O3: 0～13.0%, MgO:0～12%, CaO:0～15%, SrO:0～16%, BaO:0～
15% and MgO+CaO+SrO+BaO:8～26%.
As long as the kind of glass substrate 18 meets above-mentioned condition, then can be common glass substrate, such as, can enumerate
The glass substrate etc. of the display devices such as LCD, OLED.The chemical proofing of glass substrate 18, resistance to excellent moisture permeability, and heat
Shrinkage factor is low.Index as percent thermal shrinkage, it is possible to use the linear expansion coefficient of regulation in JIS R 3102 (nineteen ninety-five revision).
Frit is melted and moltens glass into tabular and obtain by glass substrate 18.Such shaping side
Method can be usual way, such as, can use float glass process, fusion method, slot draw method, vertical drawing process, La Baisi
(Lubbers) method etc..It addition, the glass substrate that particularly thickness is thin can obtain as follows: will temporarily be configured to the glass of tabular
It is heated to the temperature that can shape, stretches by utilizing the means such as stretching to carry out and make its thinning method (horizontal sheet process) become
Shape, thus obtain.
As long as the glass of glass substrate 18 meets above-mentioned condition, then except above-mentioned without alkali borosilicate glass in addition to, also
Can use such as borosilicate glass, soda-lime glass glass, vagcor, other are using silicon oxide as the oxygen of main component
Compound system glass etc..As oxidation system glass, the content of the silicon oxide being preferably based on oxide conversion is 40～90 mass %
Glass.
As the glass of glass substrate 18, the glass being suitable to the kind of device, its manufacturing process can be used.Such as, right
In the glass substrate of liquid crystal panel, owing to liquid crystal is easily impacted by the dissolution of alkali metal component, therefore, by the most not
The glass (alkali-free glass) of alkali metal-containing component forms (wherein, generally comprising alkaline earth metal component).So, glass substrate 18
Glass can the kind of device based on application and manufacturing process thereof and suitably select.
The thickness of glass substrate 18 is not particularly limited, and goes out from slimming and/or the light-weighted viewpoint of glass substrate 18
Send out, for example, below 0.8mm, preferably below 0.3mm, more preferably below 0.15mm.During more than 0.8mm, exist and be unsatisfactory for
The slimming of glass substrate 18 and/or the situation of light-weighted requirement.During for below 0.3mm, it is possible to glass substrate 18 is given
Good flexibility.During for below 0.15mm, it is possible to by glass substrate 18 wound into rolls.It addition, for easily manufacturing glass base
Plate 18, being easily processed the reasons such as glass substrate 18, the thickness of glass substrate 18 is preferably more than 0.03mm.
Glass substrate 18 can be formed above by 2 layers, and in the case of being somebody's turn to do, the material forming each layer can be same material, also
Can be different kind materials.In the case of Gai, " thickness of glass substrate " refers to the gross thickness of whole layer.
It should be noted that in glass laminate 10, the 1st interarea 14a of inorganic layer 14 and the 1st interarea of glass substrate 18
18a directly contacts.I.e., preferably on the 1st interarea 18a (face of inorganic layer 14 side) of glass substrate 18, it is not provided with inorganic thin film
Layer, is particularly not provided with the inorganic thin film layer formed by metal fluoride.
In the case of 1st interarea of glass substrate is provided with the layer such as formed by metal fluoride, band metal fluorine
The glass substrate of compound layer and the adaptation supporting substrate of band inorganic layer are deteriorated after high-temperature process, and both spontaneously peel off,
Cannot function as glass laminate to use.
So, glass substrate after high-temperature process is spontaneously peeled off, when can not implement peeling behavior artificially,
The situation also serving as fissility difference in the present invention processes.
(manufacture method of glass laminate)
The manufacture method of glass laminate 10 is not particularly limited, and specifically can enumerate: will band under atmospheric pressure environment
After the support substrate 16 of inorganic layer and glass substrate 18 overlap, roller, pressuring machine is used to make its method crimped.By with roller, add
Press crimps, and support substrate 16 and the glass substrate 18 of band inorganic layer are the most closely sealed, therefore preferably.It addition, by utilizing
Roller or the crimping of pressuring machine, the bubble ratio supported between substrate 16 and glass substrate 18 being mixed into band inorganic layer is easier to be gone
Remove, therefore preferably.
When utilizing vacuum layer platen press, vacuum-pressure processes to crimp, it may be desirable to suppression bubble is mixed into, it is good close to guarantee
Close, the most more preferably.By crimping under vacuo, even if remaining small bubble, bubble also will not grow because of heating,
Also there is the advantage not being easily caused deformation defect.
When the support substrate 16 and glass substrate 18 making band inorganic layer is the most closely sealed, preferably to inorganic layer 14 and glass
Glass substrate 18 contacts with each other the face of side and fully cleans, and carries out stacking in the environment of cleannes height.
And then, by under the hot conditions to glass laminate 10 (with reference to Fig. 1) enforcement such as more than 400 DEG C of gained
Process, can obtain the glass laminate 11 having after the high-temperature process of fragile layer 26, there is support substrate 12, inorganic the most successively
The glass laminate 11 (with reference to Fig. 2) of layer 14, fragile layer 26 and glass substrate 18.
It should be noted that the upper limit of the temperature conditions of high-temperature process is not particularly limited, the usually feelings of less than 700 DEG C
Condition is more.
Herein, it is described in detail for fragile layer 26.
First, it is believed that before by the support substrate 16 of band inorganic layer and glass substrate 18 stacking, band inorganic layer
It is adsorbed with water (absorption water) on exposed surface that is the 1st interarea 14a of the inorganic layer 14 that support group plate 16 has, generates OH base.Think
Overlapping glass substrate 18 on 1st interarea 14a of such inorganic layer 14 and after obtaining glass laminate 10, by the glassy layer of gained
Stack 10 exposes under the high temperature conditions, thus adsorbs water (H2O) depart from, inorganic layer 14 He from the 1st interarea 14a of inorganic layer 14
The interface of glass substrate 18 exists in gaseous form.At this time, it is believed that inorganic layer 14 such as comprises containing magnesium fluoride (MgF2)
Containing F inorganic layer time, by following reaction equation, absorption water departs from.
2Mg-OH→Mg-O-Mg+H2O
And then, it is believed that inorganic layer 14 under the high temperature conditions and the interface of glass substrate 18, the 1st interarea of inorganic layer 14
14a and absorption water (H2O) react as following reaction equation, generate fluohydric acid gas (HF).
MgF2+H2O→MgO+2HF
Then, it is believed that the HF of generation as following reaction equation with the SiO of the 1st interarea 18a constituting glass substrate 182Instead
Should, with H2SiF6Form volatilization.
SiO2+6HF→H2SiF6+2H2O
So, by glass laminate 10 being implemented the process under hot conditions, at the 1st interarea 18a of glass substrate 18
The region (region of inorganic layer 14 side) of side forms fragile layer 26.That is, fragile layer 26 is derived from the layer of glass substrate 18, but due to
H2SiF6Volatilization, the Si that should constitute layer sloughs and tender, easy cohesional failure.Therefore, in separation circuit described later,
Cohesional failure is produced, it is possible to be easily peeled off glass substrate 18 in fragile layer 26.
Owing to fragile layer 26 is derived from the layer of glass substrate 18, so its compositions etc. rely basically on glass substrate 18,
Si and Al is at least contained in the same manner as glass substrate 18.Additionally, it is preferred that in addition to O (oxygen element), the 1st element that content is most
For Si, it is Al that content is only second to the 2nd element of the 1st element.
Further, since the layer that the Si that fragile layer 26 is glass substrate 18 volatilizees and formed, so compared with glass substrate 18
Si amount in Ceng tails off relatively.Therefore, for the atomic ratio (Al/Si) relative to Si of the Al in layer, glass substrate 18 is than fragility
Layer 26 is less.
More specifically, the atomic ratio Y (Al/Si) of Al Yu Si in fragile layer 26 relative to the Al in glass substrate 18 with
The ratio (Y/X) of the atomic ratio X (Al/Si) of Si is more than 1.2, from the aspect that the effect of the present invention is more excellent, and preferably 1.3
Above, more preferably more than 1.5.The upper limit is not particularly limited, and usually the situation of less than 4.0 is more.
It should be noted that above-mentioned atomic ratio is as passed through x-ray photoelectron power spectrum (X-ray
Photoelectron Spectroscopy；XPS) method is measured.
The thickness of fragile layer 26 is not particularly limited, from the aspect that the effect of the present invention is more excellent, preferably 30nm
Above, it is more preferably more than 50nm.The upper limit is not particularly limited, and mostly generally is below 500nm.
Glass laminate 10 (11) may be used for various uses, such as, can enumerate manufacture display device face described later
The purposes etc. of the electronic units such as plate, PV, thin-film secondary battery, the surface semiconductor crystal wafer being formed with circuit.It should be noted that
In this purposes, glass laminate 10 is exposed under hot conditions (such as more than 400 DEG C) (such as more than 10 minutes) mostly.
Herein, display device panel includes: LCD, OLED, Electronic Paper, plasm display panel, Flied emission face
Plate, quantum dot LED panel, MEMS (the fast shop front of microelectromechanical systems (Micro Electro Mechanical Systems)
Plate etc..
[electronic device and manufacture method thereof]
Then, the suitable embodiment for electronic device and manufacture method thereof is described in detail.
(A) and (B) of Fig. 3 is in the suitable embodiment of manufacture method of the electronic device illustrating the present invention in order
The schematic cross-section of each operation, (A) of Fig. 3 illustrates component formation process, and (B) of Fig. 3 illustrates separation circuit.That is, the present invention
The manufacture method of electronic device has component formation process and separation circuit.
Hereinafter, with reference to Fig. 3 (A) and (B) while material and the step thereof used in each operation is described in detail.
First, it is described in detail for component formation process.
(component formation process)
Component formation process is the operation forming electronic device component on the glass substrate in glass laminate.
More specifically, as shown in Fig. 3 (A), the 2nd interarea 18b of glass substrate 18 forms electronic device component
20, manufacture the duplexer 22 of having electronic device component.
First, it is described in detail, afterwards for the step of operation for the electronic device component 20 used in this operation
Suddenly it is described in detail.
＜ electronic device component (functional element) ＞
Electronic device component 20 is formed on the 2nd interarea 18b of glass substrate 18 and constitutes electronic device at least
The component of a part.More specifically, as electronic device component 20, can enumerate: at display device panel, solar energy
Battery, thin-film secondary battery, surface are formed with in electronic units such as the semiconductor crystal wafer of circuit etc. the component used.As display
Device panel, including liquid crystal panel, organic EL panel, plasm display panel, field emission panel etc..
Such as, as component used for solar batteries, for silicon type, can enumerate: the transparency electrodes such as the stannum oxide of positive pole, p
Silicon layer represented by layer/i layer/n-layer and the metal etc. of negative pole, furthermore, it is possible to enumerate: with compound type, dye sensitization type,
The various components etc. that quantum point type etc. are corresponding.
It addition, as thin-film secondary battery component, for type lithium ion, can enumerate: positive pole and the metal of negative pole or
The transparency electrode of metal-oxide etc., the lithium compound of dielectric substrate, the metal of current collection layer, resin etc. as sealant, this
Outward, can enumerate: the various components etc. corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc..
It addition, as electronic component-use component, for CCD, CMOS, can enumerate: the metal of conductive part, the oxygen of insulation division
SiClx, silicon nitride etc., furthermore, it is possible to enumerate: with the various sensors such as pressure sensor acceleration sensor, rigidity printing base
The various components etc. that plate, flexible printed board, rigid and flexible printed base plate etc. are corresponding.
Step ＞ of ＜ operation
The manufacture method of the duplexer 22 of above-mentioned having electronic device component is not particularly limited, and uses according to electronic device
The kind of the member of formation of component, utilizes known method, is formed on the surface of the 2nd interarea 18b of glass substrate 18
Electronic device component 20.
Ultimately form on the 2nd interarea 18b of glass substrate 18 it should be noted that electronic device component 20 can not be
Whole (hereinafter referred to as " whole components ") of component, a but part (hereinafter referred to as " partial component ") for whole components.
Can also (be equivalent to aftermentioned by the glass substrate of band portion component operation behind is made the glass substrate with whole components
Electronic device).Alternatively, it is also possible on the glass substrate with whole components, above form other in its release surface (the 1st interarea)
Electronic device component.Alternatively, it is also possible to the duplexer of the whole component of assembled belt, peel off from the duplexer with whole components afterwards
Support substrate 16 (inorganic layer and support substrate) with inorganic layer, thus manufacture electronic device.And then, it is possible to use 2 bands
All the duplexer of component assembles electronic device, peels off a support group of 2 band inorganic layers afterwards from the duplexer with whole components
Plate 16, thus manufacture electronic device.
Such as, during to manufacture in case of OLED, in order to be formed on the surface at the 2nd interarea 18b of glass substrate 18
Organic EL structure, carries out the most various layers and is formed, processes: form transparency electrode, and then in the face being formed with transparency electrode
Upper evaporation hole injection layer hole transmission layer luminescent layer electron transfer layers etc., form backplate, use sealing plate to enter
Row sealing etc..As these layers formed, process, specifically, can enumerate film forming process, vapor deposition treatment, sealing plate bonding
Process.
It addition, such as, the manufacture method of TFT-LCD has such as inferior various operations: TFT formation process, uses anti-corrosion liquid,
The membrane formation process general by CVD and sputtering method etc. is formed by the 2nd interarea 18b of the glass substrate 18 of glass laminate 10
Metal film and metal oxide film etc. carry out pattern formation, form thin film transistor (TFT) (TFT)；CF formation process, at other glass
On 2nd interarea 18b of the glass substrate 18 of duplexer 10, anti-corrosion liquid is used for pattern and forms color filter (CF)；And patch
Close operation, by device substrate and the device substrate stacking of band CF of band TFT.
In TFT formation process, CF formation process, use known photoetching technique, etching technique etc., at glass substrate 18
2nd interarea 18b forms TFT, CF.Now, the coating fluid that anti-corrosion liquid is formed is used as pattern.
It should be noted that before forming TFT, CF, can as required the 2nd interarea 18b of glass substrate 18 be entered
Row cleans.As cleaning method, it is possible to use known dry clean, wet-cleaned.
In bonding process, between the duplexer and the duplexer of band CF of band TFT, inject liquid crystal material carry out stacking.As
The method injecting liquid crystal material, such as, have decompression injection method, dropping injection method.
It should be noted that in component formation process, implement the process under such as hot conditions more than 400 DEG C.Cause
This, by being formed through component, thus as shown in (A) of Fig. 3, form fragile layer between inorganic layer 14 and glass substrate 18
26.That is, formation comprises support substrate 12, inorganic layer 14, fragile layer 26, glass substrate 18 and the glass of electronic device component 20
Duplexer (duplexer 22 of having electronic device component).
(separation circuit)
Separation circuit is following operation: the duplexer of the having electronic device component obtained from above-mentioned component formation process
The support substrate 16 (inorganic layer and support substrate) of 22 release band inorganic layers, obtains comprising electronic device component 20 and glass base
The electronic device 24 (glass substrate of having electronic device component) of plate 18.That is, for the duplexer by having electronic device component
22 support substrate 16 (inorganic layer and support substrate) and the operations of electronic device 24 being separated into band inorganic layer.Need explanation
It is, now, owing to there is cohesional failure in fragile layer 26, so being in most cases separated into the support substrate of band inorganic layer
16 and electronic device 24.
The electronic device component 20 on glass substrate 18 during stripping is form necessary whole member of formation one
Timesharing, it is also possible to after isolation, forms remaining member of formation on glass substrate 18.
The method supporting substrate 16 and electronic device 24 being separated into band inorganic layer is not particularly limited.For example, it is possible to
Insert sharp keen cutter shape object near fragile layer 26 between inorganic layer 14 and glass substrate 18, give rising of stripping
Point, then blows water and compressed-air actuated fluid-mixing etc. and peels off.Preferably, with the layer of having electronic device component
The substrate 12 that supports of stack 22 be that the mode on the downside of upside, electronic device component 20 side are is arranged on platform, makes electronics device
Part component 20 side vac sorb is (two sides is carried out in the case of being laminated with support substrate successively) on platform, in this condition,
First cutter is made to invade near fragile layer 26.Further, afterwards support substrate 12 side is adsorbed with multiple vacuum cups, from inserting
Enter and near the position of cutter, made vacuum cup increase successively.So, there is cohesional failure at fragile layer 26, it is possible to easily shell
Support substrate 16 from band inorganic layer.
Peel strength when peeling off electronic device 24 is not particularly limited, from industrial aspect, preferably 2.0N/
Below 25mm, more preferably below 1.2N/25mm.
It should be noted that peel off electronic device 24 time peel strength be referred to as peel off glass substrate 18 time stripping
From intensity.That is, from comprising the glass laminate supporting substrate 12, inorganic layer 14, fragile layer 26 and glass substrate 18 (according to need
Want, comprise electronic device component 20) 11 peel off glass substrate 18 time peel strength be preferably above-mentioned scope.
It should be noted that in this specification, peel strength can be by the disbonded test of embodiment 1 described later record
Obtain.
The electronic device 24 obtained by above-mentioned operation is suitable for manufacturing mobile phone, smart mobile phone, plate PC etc. and moves
The compact display apparatus that dynamic terminal is used.Display device is mainly LCD or OLED, as LCD, including TN type, STN type, FE
Type, TFT type, mim type, IPS type, VA type etc..Substantially in passive driving types, the situation of any display device of active-drive
The most all can apply.
It should be noted that can the band inorganic layer separated by above-mentioned steps to support stacking on substrate 16 new
Glass substrate 18, as new glass laminate 10.
Embodiment
Hereinafter, specifically describe the present invention by embodiment etc., but the present invention is not limited by these examples.
In below example and comparative example, as glass substrate, use by the glass formed without alkali borosilicate glass
Plate (long 100mm, wide 100mm, thickness of slab 0.2mm, linear expansion coefficient 38 × 10-7/ DEG C, Asahi Glass Co., Ltd manufacture trade name
“AN100”)。
It addition, as supporting substrate, use same by glass plate (long 100mm, the width formed without alkali borosilicate glass
100mm, thickness of slab 0.5mm, linear expansion coefficient 38 × 10-7/ DEG C, Asahi Glass Co., Ltd manufacture trade name " AN100 ").
It should be noted that (the oxidation of the composition without alkali borosilicate glass used as glass substrate and support substrate
The quality percentage of thing benchmark represents) as described below.
SiO2: 59.8%
Al2O3: 17.2%
B2O3: 7.9%
MgO:3.3%
CaO:4.0%
SrO:7.7%
BaO:0.1%
＜ embodiment 1 ＞
The interarea supporting substrate is carried out pure water cleaning, then carries out alkali cleaning thus purifying.At inorganic layer
Formation uses vacuum deposition apparatus (Showa vacuum Co., Ltd. manufacture, SEC-16CM).Vapor deposition source uses MgF2(magnesium is fluorinated
Thing) granule, be vented to 10-5Film forming is at room temperature carried out after below Torr.The thickness of inorganic layer is by by crystal oscillator
(the most same) is recorded as thickness monitor and the contact pin type film thickness gauge of film thickness sensor.On purifying face
Vapour deposition method is utilized to form the MgF of thickness 30nm2Layer (being equivalent to inorganic layer), obtain glass laminate A1 band inorganic layer
Support group plate.
The surface roughness (Ra) of the 1st interarea of the inorganic layer supporting substrate of the band inorganic layer of gained is 0.3nm.Need
Illustrating, surface roughness (Ra) uses AFM (model: L-trace (Nanonavi), Hitachi High-
Technologies Corporation manufactures), it is measured (the most same) according to JIS B 0601 (calendar year 2001 revision).
Then, the 1st interarea to the inorganic layer supporting substrate of the band inorganic layer of gained implements alkali process.Specifically,
First, with the potassium hydroxide aqueous solution (potassium hydroxide 3 mass %, more than pH12) of 40 DEG C, the 1st interarea of inorganic layer is sprayed
Drench and clean.Then, the pure water utilizing 25 DEG C fully removes potassium hydroxide aqueous solution.Afterwards, pure water is removed by air pressure.Thus,
The water contact angle making the 1st interarea of inorganic layer is 4 °.
It should be noted that water contact angle uses the contact angle meter CA-X type of consonance interface science Co., Ltd. manufacture, root
It is measured (the most same) according to JIS R 3257:1999.
Then, an interarea of glass substrate is carried out pure water cleaning, then carries out alkali cleaning thus purifying.Then,
By the 1st interarea of inorganic layer supporting substrate of band inorganic layer and glass substrate through the 1st purifying interarea at room temperature
Fitted by vacuum pressed, obtain glass laminate A1.
It should be noted that after alkali processes time till the stacking of glass substrate be 5 minutes.
In glass laminate A1 of gained, it is closely sealed, that the support substrate of band inorganic layer and glass substrate do not produce bubble ground yet
Not having deformation defect, flatness is the best.
For glass laminate A1, in a nitrogen atmosphere, implement 10 minutes heat treated with 550 DEG C.Thus, at inorganic layer
And between glass substrate, form fragile layer.The thickness of fragile layer is 140nm.Sweep it should be noted that the thickness of fragile layer uses
The type ultramicroscope of retouching is measured (the most same).
Then, carry out following disbonded test, measure the peel strength (N/25mm) of glass substrate.
Assay method is as follows: prepares glass laminate A1 of the wide long 70mm of 25mm, uses Autograph AG-20/
50kNXDplus (Shimadzu Seisakusho Ltd.) carries out the stripping of glass substrate.
Now, the stainless steel cutter of inserting thickness 0.1mm near the fragile layer of glass laminate A1 after a heating treatment
Tool, forms the starting point portion peeled off, is then completely fixed by glass substrate, promotes and supports substrate, thus carries out the mensuration of intensity.Need
It is noted that peeling rate is 30mm/min.Place load being detected is set to 0, the position of 2.0mm will be promoted from this position
The peel strength put is as measured value.Peel strength now is 0.18N/25mm.It should be noted that by this results verification
The peel strength at the interface of the layer of inorganic layer and support substrate is more than the peel strength of inorganic layer with the interface of glass substrate.
When this stripping, fragile layer generation cohesional failure.The band inorganic layer confirming to peel off support in substrate inorganic
The fragile layer of cohesional failure it is attached with on 1st interarea of layer.Then, for the fragile layer of attachment on the 1st interarea of inorganic layer,
The atomic ratio Y (Al/Si) of Al Yu Si in mensuration fragile layer, its value of result is 0.48.
Similarly, the atomic ratio X (Al/Si) of Al Yu Si in mensuration glass substrate, its value of result is 0.19.
Therefore, the atomic ratio Y ratio (Y/X) relative to atomic ratio X is 2.53 (to carry out four houses five to the after arithmetic point the 3rd
Enter).
It should be noted that the mensuration use x-ray photoelectron spectroscopy device of atomic ratio (PHI5000VersaProbe,
ULVAC-PHI company system) (the most same).
＜ embodiment 2～3 ＞
CeF is manufactured respectively according to below step3(cerium fluoride) layer (embodiment 2) or SnO2(Fluorin doped aoxidizes F
Stannum) layer (embodiment 3) replacement formation MgF2Layer, in addition, manufactures glass laminate A2 according to step similarly to Example 1
～A3.
《CeF3The making step of layer "
The interarea supporting substrate is carried out pure water cleaning, carries out alkali cleaning afterwards thus purifying.And then, passing through
Vapour deposition method is utilized to form the CeF of thickness 30nm on purifying face3Layer (being equivalent to inorganic layer), obtains glass laminate A2
Support substrate with inorganic layer.(embodiment 2)
《SnO2The making step of F layer "
The interarea supporting substrate is carried out pure water cleaning, carries out alkali cleaning afterwards thus purifying.And then, to process
Purifying face utilizes atmospheric pressure thermal cvd, blows monobutyl-tin-trichloride (MBTC), H at 550 DEG C simultaneously2O、O2And HF,
Form the SnO of thickness 10nm2F layer (is equivalent to inorganic layer), obtains the support substrate of the band inorganic layer of glass laminate A3.
(embodiment 3)
In glass laminate A2 of gained～A3, it is close that the support substrate of band inorganic layer and glass substrate do not produce bubble ground
Closing, also do not have deformation defect, flatness is the best.
For glass laminate A2～A3, implement heat treated according to step similarly to Example 1.Thus, inorganic
Fragile layer is formed between layer and glass substrate.Then, operate similarly to Example 1, implement the glass substrate after heat treated
Stripping, result can peel off the support substrate and glass substrate that (separation) is band inorganic layer.
When this stripping, fragile layer generation cohesional failure.Confirm the nothing supported in substrate at the band inorganic layer peeled off
The fragile layer of cohesional failure it is attached with on 1st interarea of machine layer.Then, in embodiment 2～3, the most similarly to Example 1
Operation, measure the atomic ratio Y (Al/Si) of fragile layer, glass substrate atomic ratio X (Al/Si) and atomic ratio Y relative to atom
Ratio (Y/X) than X.
It addition, operate similarly to Example 1, measure the peel strength (unit: N/25mm) when peeling off glass substrate.
Result is shown in table 1 below.
＜ comparative example 1 ＞
CeO is made according to below step2(cerium oxide) replaces MgF2Layer, in addition, according to similarly to Example 1
Step, manufactures glass laminate B1.
《CeO2The making step of layer "
The interarea supporting substrate is carried out pure water cleaning, carries out alkali cleaning afterwards thus purifying.And then, passing through
Magnetron sputtering method is utilized to form the CeO of thickness 30nm on purifying face2Layer, obtains the band inorganic layer of glass laminate B1
Support substrate.
In glass laminate B1 of gained, it is closely sealed, that the support substrate of band inorganic layer and glass substrate do not produce bubble ground yet
Not having deformation defect, flatness is the best.
For glass laminate B1, implement heat treated according to step similarly to Example 1, glass laminated at gained
In body B1, support substrate and the glass substrate of band inorganic layer are closely sealed while part produces bubble., after heat treated
In glass laminate B1, the formation to fragile layer unconfirmed between inorganic layer and glass substrate.
Then, for glass laminate B1 after heat treated, according to step similarly to Example 1, cutter is inserted also
Attempt the stripping of glass substrate, but glass substrate cannot be peeled off.
＜ comparative example 2 ＞
Make ITO (indium tin oxide layer) according to below step and replace MgF2Layer, in addition, according to same with embodiment 1
The step of sample manufactures glass laminate B2.
" making step of ITO layer "
The interarea supporting substrate is carried out pure water cleaning, carries out alkali cleaning afterwards thus purifying.And then, passing through
Magnetron sputtering method (heating-up temperature 300 DEG C, one-tenth film pressure 5mTorr, power density 4.9W/cm is utilized on purifying face2) formed
The ITO layer (indium tin oxide layer) of thickness 30nm, obtains the support substrate of the band inorganic layer of glass laminate B2.
In glass laminate B2 of gained, it is closely sealed, that the support substrate of band inorganic layer and glass substrate do not produce bubble ground yet
Not having deformation defect, flatness is the best.
For glass laminate B2, implement heat treated, the glass laminate of gained according to step similarly to Example 1
In B2, support substrate and the glass substrate of band inorganic layer are closely sealed while part produces bubble., after a heating treatment
In glass laminate B2, the formation to fragile layer unconfirmed between inorganic layer and glass substrate.
Then, for glass laminate B2 after heat treated, according to step similarly to Example 1, cutter is inserted also
Attempt the stripping of glass substrate, but glass substrate cannot be peeled off.
By above-described embodiment 1～3 and the result of comparative example 1～2 conclude and be shown in table 1 below.
It should be noted that in embodiment 1～3, according to the result of the stripping of above-mentioned glass substrate, it is thus identified that inorganic layer with
Support the peel strength at interface of the layer of substrate more than inorganic layer and the peel strength at the interface of glass substrate.
In table 1 below, the hurdle of " kind " of " inorganic layer " is recorded on support substrate, has configured the inorganic of (fixing)
The kind of layer, has recorded its fusing point in the hurdle of " fusing point ".
It addition, in table 1 below, about in the hurdle than (Y/X), the situation of the formation to fragile layer unconfirmed is designated as "-".
It addition, in table 1 below, the hurdle of " stackability " of " evaluation " has been recorded result when making glass laminate.
Support substrate and glass substrate with inorganic layer do not produce that bubble ground is closely sealed, also do not have the best feelings of deformation defect, flatness
Under condition, the glass laminate excellent as stackability is designated as "○", and glass laminate in addition is designated as "×".
It addition, in table 1 below, in the hurdle of " fissility " of " evaluation ", glass substrate can be peeled off after heat treated
In the case of, the glass laminate excellent as fissility is designated as "○", it is impossible in the case of stripping, as the glass of fissility difference
Duplexer is designated as "×".
It addition, in table 1 below, in the hurdle of " peel strength " of " evaluation ", the situation not measuring peel strength is designated as
“-”。
[table 1]
Table 1
As shown in table 1, in embodiment 1～3, the stackability supporting the inorganic layer on substrate and glass substrate is excellent, and
The glass laminate after process under hot conditions can be easily peeled off glass substrate.
On the other hand, CeO is used2Although layer or ITO layer are good as comparative example 1 and 2 stackability of inorganic layer, but peel off
Property is poor.
＜ embodiment 4 ＞
In this example, glass laminate A1 that manufacture in embodiment 1, before heat treated is used to make OLED.Need explanation
, as the heat treatment temperature in following technique, implement the process of more than 400 DEG C.
More specifically, the 2nd interarea of the glass substrate in glass laminate A1 utilizes sputtering method by molybdenum film forming, lead to
Cross and use photolithographic etching to form gate electrode.Then, utilize plasma CVD method at the of the glass substrate being provided with gate electrode
2 interarea sides are further according to silicon nitride, intrinsic amorphous silicon, the order film forming of N-shaped non-crystalline silicon, then, become by molybdenum by sputtering method
Film, by using photolithographic etching, forms gate insulating film, semiconductor element portion and source/drain.Then, utilize wait from
Silicon nitride film forming is formed passivation layer in the 2nd interarea side of glass substrate by daughter CVD further, and then passing through sputtering method will
Tin indium oxide film forming, by using photolithographic etching to form pixel electrode.
Then, in the 2nd interarea side of glass substrate further with vapour deposition method, using as 4,4 ', the 4 of hole injection layer "-
Three (3-methylphenylphenyl amino) triphenylamine, double [(N-naphthyl)-N-phenyl] benzidine, conducts as hole transmission layer
Luminescent layer at 8-hydroxyquinoline aluminium complex (Alq3Double [4-[N-(4-the methoxyphenyl)-N-phenyl] ammonia of mixing 2,6-in)
Base styryl] naphthalene-1,5-dimethoxy nitrile (BSN-BCN) 40 volume % material, as the Alq of electron transfer layer3Successively
Film forming.Then, by sputtering method on the 2nd interarea side of glass substrate by aluminum film forming, by using photolithographic etching, formed
To electrode.Then, on the 2nd interarea define the glass substrate to electrode, adhesive linkage by ultraviolet hardening is fitted another
One glass substrate also seals.That obtained by above-mentioned steps, on the glass substrate there is the glass laminated of organic EL structure
Body is equivalent to the duplexer of having electronic device component.
Then, make the sealing side vac sorb of glass laminate of gained in platform, then, at the angle of glass laminate
The stainless steel cutter of inserting thickness 0.1mm near the fragile layer in portion, separates the support substrate of band inorganic layer, obtains OLED face
Plate (is equivalent to electronic device, hereinafter referred to as panel A).The panel A made connects IC drive, make it drive at normal temperatures and pressures
Dynamic, result is unconfirmed to display inequality in drive area.
＜ embodiment 5 ＞
In this example, glass laminate A1 that manufacture in embodiment 1, before heat treated is used to make LCD.Need explanation
, as the heat treatment temperature in following technique, implement the process of more than 400 DEG C.
Prepare 2 glass laminate A1, first, on the 2nd interarea of the glass substrate in glass laminate A1, profit
With sputtering method by molybdenum film forming, by using photolithographic etching to form gate electrode.Then, utilize plasma CVD method, be provided with
2nd interarea side of the glass substrate of gate electrode is further by silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon film forming successively, then sharp
With sputtering method by molybdenum film forming, by using photolithographic etching, form gate insulating film, semiconductor element portion and source/drain.
Then, plasma CVD method is utilized, in the 2nd interarea side of glass substrate further by silicon nitride film forming, after forming passivation layer,
Utilize sputtering method by tin indium oxide film forming, form pixel electrode by the photolithographic etching of use.Then, pixel electricity is being defined
Utilize rolling method to be coated with polyimide resin liquid on 2nd interarea of the glass substrate of pole, form oriented layer by heat cure, carry out
Friction.The glass laminate of gained is referred to as glass laminate X1.
Then, the 2nd interarea of the glass substrate in another glass laminate A1 utilizes sputtering method by chromium film forming, lead to
Cross and use photolithographic etching to form light shield layer.Then, be provided with light shield layer glass substrate the 2nd interarea side further with
Die coating method coating chromatic resist, forms color-filter layer by photoetching process and heat cure.Then, at the 2nd interarea of glass substrate
Side further with sputtering method by tin indium oxide film forming, shape paired electrode.Then, it is being provided with the 2nd of the glass substrate to electrode
Utilize die coating method coated UV line to solidify resin liquid on interarea, form column spacer by photoetching process and heat cure.Then, exist
On 2nd interarea of the glass substrate being formed with column spacer, utilize rolling method to be coated with polyimide resin liquid, pass through heat cure
Form oriented layer, rub.Then, the 2nd interarea side at glass substrate utilizes allotter method to be described by sealing resin liquid
For frame-shaped, utilize allotter method to drip liquid crystal in frame, then use above-mentioned glass laminate X1, by 2 glass laminate
Fit each other in 2nd interarea side of glass substrate, obtained the duplexer with LCD by ultraviolet curing and heat cure.With
Under, the duplexer with LCD herein is referred to as the duplexer X2 of panel.
Then, the support substrate of the band inorganic layer on two sides is peeled off similarly to Example 1 from the duplexer X2 of panel,
To comprising the substrate defining tft array and defining LCD B (being equivalent to electronic device) of substrate of color filter.
Make LCD B on connect IC drive, make it drive at normal temperatures and pressures, result in drive area not
Confirm display inequality.
Illustrate the present invention in detail and with reference to specific embodiment, but will be apparent to those skilled in the art in
It is without departing from the spirit and scope in the present invention can various changes, correction in addition.The application is based in April, 2014
Japanese patent application (Patent 2014-091460) filed in 25 days, using its content as with reference to introducing wherein.
Description of reference numerals
10 glass laminate
11 glass laminate
12 support substrate
14 inorganic layers
14a the 1st interarea (inorganic layer with support substrate-side be in the surface of opposition side)
The support substrate of 16 band inorganic layers
18 glass substrates
18a the 1st interarea (surface of the inorganic layer side of glass substrate)
18b the 2nd interarea (being in the surface of opposition side with inorganic layer side of glass substrate)
20 electronic device components
The duplexer of 22 having electronic device components
24 electronic devices (glass substrate of having electronic device component)
26 fragile layers
Claims (10)
1. a glass laminate, it has:
With the support substrate of inorganic layer, it has support substrate and is arranged in the inorganic layer on described support substrate；With
Strippingly it is layered in the glass substrate on described inorganic layer,
Described inorganic layer comprises: containing F containing F inorganic layer.
2. a glass laminate, it possesses support substrate, inorganic layer, fragile layer and glass substrate successively,
Described inorganic layer comprises: containing F containing F inorganic layer,
Described fragile layer is the inorganic layer containing Al and Si,
The atomic ratio Y (Al/Si) of Al Yu Si in the described fragile layer atomic ratio X relative to Al Yu Si in described glass substrate
(Al/Si) ratio (Y/X) is more than 1.2.
Glass laminate the most according to claim 2, wherein, peel strength when peeling off described glass substrate is 2.0N/
Below 25mm.
4. according to the glass laminate according to any one of claims 1 to 3, wherein, the described inorganic layer containing F contains choosing freely gold
Belong at least one in the group of fluoride and fluorine blended metal oxide composition.
Glass laminate the most according to claim 4, wherein, the fusing point of described metal fluoride is more than 800 DEG C.
6. according to the glass laminate described in claim 4 or 5, wherein, described metal fluoride comprises and selects free alkali metal, alkali
At least one element in the group of earth metal, Sc, Y, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Ga, In and lanthanide series composition.
Glass laminate the most according to claim 4, wherein, described fluorine blended metal oxide is fluorine-doped tin oxide.
8., according to the glass laminate according to any one of claim 1～7, wherein, the surface roughness of described inorganic layer is
Below 2nm.
9. according to the glass laminate according to any one of claim 1～8, wherein, described support substrate is glass plate.
10. a manufacture method for electronic device, it possesses following operation:
Component formation process, the described glass substrate possessed in the glass laminate according to any one of claim 1～9 with
Described inorganic layer side is on the surface of opposition side formation electronic device component, thus obtains the layer of having electronic device component
Stack；
Separation circuit, peels off described inorganic layer and described support substrate from the duplexer of described having electronic device component, thus
Obtain that there is described glass substrate and the electronic device of described electronic device component.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-091460 | 2014-04-25 | ||
| JP2014091460 | 2014-04-25 | ||
| PCT/JP2015/060777 WO2015163134A1 (en) | 2014-04-25 | 2015-04-06 | Glass laminate body, and method for manufacturing electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106232351A true CN106232351A (en) | 2016-12-14 |
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ID=54332301
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580022073.3A Pending CN106232351A (en) | 2014-04-25 | 2015-04-06 | Glass laminate and the manufacture method of electronic device |
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| Country | Link |
|---|---|
| JP (1) | JPWO2015163134A1 (en) |
| KR (1) | KR20160146712A (en) |
| CN (1) | CN106232351A (en) |
| TW (1) | TWI647099B (en) |
| WO (1) | WO2015163134A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020073606A1 (en) * | 2018-10-09 | 2020-04-16 | 深圳市华星光电技术有限公司 | Method for manufacturing flexible substrate |
| CN113079600A (en) * | 2020-01-06 | 2021-07-06 | 佛山市顺德区美的电热电器制造有限公司 | Composite material, electric appliance and method for preparing composite material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107857480A (en) * | 2016-09-21 | 2018-03-30 | 旭硝子株式会社 | The manufacture method of glass plate and glass substrate |
| WO2019036710A1 (en) | 2017-08-18 | 2019-02-21 | Corning Incorporated | Temporary bonding using polycationic polymers |
| CN111615567B (en) | 2017-12-15 | 2023-04-14 | 康宁股份有限公司 | Method for treating substrate and method for producing article including adhesive sheet |
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Also Published As
| Publication number | Publication date |
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| KR20160146712A (en) | 2016-12-21 |
| JPWO2015163134A1 (en) | 2017-04-13 |
| WO2015163134A1 (en) | 2015-10-29 |
| TW201605616A (en) | 2016-02-16 |
| TWI647099B (en) | 2019-01-11 |
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