CN106712749A - Silicon carbide MOSFET and JEFT based hybrid high-voltage device - Google Patents
Silicon carbide MOSFET and JEFT based hybrid high-voltage device Download PDFInfo
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- CN106712749A CN106712749A CN201611029350.6A CN201611029350A CN106712749A CN 106712749 A CN106712749 A CN 106712749A CN 201611029350 A CN201611029350 A CN 201611029350A CN 106712749 A CN106712749 A CN 106712749A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a silicon carbide MOSFET and JEFT based hybrid high-voltage device, which comprises an MOSFET, N pieces of JFETs, N pieces of JFET driving circuits, a source electrode of the hybrid high-voltage device, a grid electrode of the hybrid high-voltage device and a drain electrode of the hybrid high-voltage device. Power portions of the circuit are connected in series through silicon carbide devices, and realize driving for the JFETs through components such as voltage stabilizing tubes, diodes, resistors and capacitors. The final hybrid high-voltage device can realize high withstand voltage of at least 6kV. Compared with other high-voltage devices, the high-voltage device disclosed by the invention can realize high frequency, high efficiency and high power intensity, and is applicable to application fields of medium and high voltage power electronic converters.
Description
Technical field
The present invention relates to a kind of mixed high-voltage device based on silicon carbide MOSFET and JFET, belong to Power Electronic Technique neck
Domain.
Background technology
Carborundum (Silicon Carbide, SiC) as third generation semi-conducting material, with high withstand voltage, high-temperature resistant etc.
Number of advantages, has obtained the extensive concern in power device field.SiC device after the development of more than 20 years, up to the present, only
Having 1200V and 1700V SiC MOSFET and SiC JFET has had some commercially produced products, higher voltage SiC device also in
In the laboratory research stage, due to technology and cost reason, large-scale use is not obtained also at present.Wherein SiC MOSFET have open
Close that frequency is high, conducting resistance is small, input impedance is high, thermal stability is good, without second breakdown problem the advantages of, but electric current reverse flow
When dynamic, the conduction voltage drop of its own parasitic diode is big.SiC JFET pipe have hot properties is good, amplification performance is good, noise is low,
Simple structure, mature preparation process, reliability is high, it is cheap the advantages of, but its gate pole threshold values is often negative voltage, not plus is being driven
It is normally opened device during dynamic negative pressure, therefore can not be accepted extensively by industrial quarters.
The content of the invention
In order to solve the above-mentioned technical problem, the invention provides a kind of mixed high-voltage based on silicon carbide MOSFET and JFET
Device.
In order to achieve the above object, the technical solution adopted in the present invention is：
Mixed high-voltage device based on silicon carbide MOSFET and JFET, including MOSFET, N number of JFET, N number of JFET drive electricity
The drain electrode of road, the source electrode of mixed high-voltage device, the grid of mixed high-voltage device and mixed high-voltage device；
The source electrode of MOSFET is connected with the source electrode of mixed high-voltage device, the grid of MOSFET and the grid of mixed high-voltage device
Connection, N number of JFET is sequentially connected in series, i-th source electrode connection of the i+1 JFET adjacent thereto that drains of JFET, and i is integer, 0
<i<N, the 1st source electrode of JFET is connected with the drain electrode of MOSFET, and the drain electrode of n-th JFET connects with the drain electrode of mixed high-voltage device
Connect；
N number of JFET drive circuits are sequentially connected in series, and the i+1 that the output end of i-th JFET drive circuit is adjacent thereto is individual
The input connection of JFET drive circuits, the input of the 1st JFET drive circuit is connected with the grid of mixed high-voltage device, N
Grid of the output end of individual JFET drive circuits respectively with N number of JFET is connected.
Also include that MOSFET drives resistance and N number of JFET to drive resistance；MOSFET drives one end of resistance with MOSFET's
Grid is connected, and the other end is connected with the grid of mixed high-voltage device, JFET driving resistance two ends respectively with JFET drive circuits
The JFET grids connection that output end and the JFET drive circuits drive.
JFET drive circuits include voltage-stabiliser tube string in parallel, diode and resistance capacitance series loop, voltage-stabiliser tube string
One end of anode, the anode of diode and resistance capacitance series loop connects into first node, and first node drives for JFET
The input of circuit, the other end of the negative electrode of voltage-stabiliser tube string, the negative electrode of diode and resistance capacitance series loop connects into
Two nodes, Section Point is the output end of JFET drive circuits.
Voltage-stabiliser tube string include several series connection voltage-stabiliser tube, first anode of voltage-stabiliser tube as voltage-stabiliser tube string anode,
The negative electrode of last voltage-stabiliser tube as voltage-stabiliser tube string negative electrode, the anode of two adjacent voltage-stabiliser tubes is connected with negative electrode.
N=5.
The beneficial effect that the present invention is reached：1st, circuit power part of the present invention is connected by silicon carbide device, and is passed through
The elements such as voltage-stabiliser tube, diode, resistance, electric capacity realize that JFET drives, and final mixed type high tension apparatus can realize at least 6kV's
High withstand voltage, with respect to other high tension apparatus, this high tension apparatus low cost is capable of achieving high-frequency, high efficiency and high power density, is applicable
Mesohigh converters application field；2nd, switching frequency of the present invention is much higher compared with other high tension apparatus, therefore it is constituted
Converter power density it is high；3rd, only one driving input port of the present invention, drives fairly simple；4th, voltage-stabiliser tube string clamper electricity
Only in static state effectively, during dynamic operation, power device partial pressure is determined by resistance capacitance, and voltage-stabiliser tube need not puncture operation on road, because
This, the switching loss of actual motion is smaller；5th, conduction loss of the present invention is relatively small, and the positive gate threshold values of SiC MOSFET has
Very strong antijamming capability；6th, in circuit during reverse direction current flow, by the way that to electric capacity automatic discharging, electric current flows only through SiC JFET
Passage, both reduces conduction loss, and anti-paralleled diode is saved again；7th, driven using the positive voltage of SiC MOSFET, and matched somebody with somebody
Suitable positive voltage SiC JFET drive circuits are put, accelerates the opening process of mixed type high tension apparatus.
Brief description of the drawings
Fig. 1 is circuit diagram of the invention.
Fig. 2 is each device voltage figure when mixed type high tension apparatus are turned off.
Fig. 3 is each device voltage measured drawing of mixed type high tension apparatus.
Fig. 4 is each device voltage figure when mixed type high tension apparatus are opened.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Following examples are only used for clearly illustrating the present invention
Technical scheme, and can not be limited the scope of the invention with this.
As shown in figure 1, the mixed high-voltage device based on silicon carbide MOSFET and JFET, including MOSFET, MOSFET drive
Resistance, 5 JFET, 5 JFET drive circuits, 5 JFET drive resistance, the source electrode of mixed high-voltage device, mixed high-voltage device
Grid and mixed high-voltage device drain electrode.
The source electrode of MOSFET is connected with the source electrode of mixed high-voltage device, the grid of MOSFET by MOSFET drive resistance with
The grid connection of mixed high-voltage device, 5 JFET are sequentially connected in series, and the drain electrode of two adjacent JFET is connected with source electrode, the 1st JFET
Source electrode be connected with the drain electrode of MOSFET, the drain electrode of the 5th JFET is connected with the drain electrode of mixed high-voltage device.
5 JFET drive circuits are sequentially connected in series, and the output end of two adjacent JFET drive circuits is connected with input, and the 1st
The input of individual JFET drive circuits is connected with the grid of mixed high-voltage device, and the output end of 5 JFET drive circuits is led to respectively
Crossing 5 JFET drives resistance to be connected with the grid of 5 JFET.
JFET drive circuits include voltage-stabiliser tube string in parallel, diode and resistance capacitance series loop, voltage-stabiliser tube string
One end of anode, the anode of diode and resistance capacitance series loop connects into first node, and first node drives for JFET
The input of circuit, the other end of the negative electrode of voltage-stabiliser tube string, the negative electrode of diode and resistance capacitance series loop connects into
Two nodes, Section Point is the output end of JFET drive circuits.
Voltage-stabiliser tube string include several series connection voltage-stabiliser tube, first anode of voltage-stabiliser tube as voltage-stabiliser tube string anode,
The negative electrode of last voltage-stabiliser tube as voltage-stabiliser tube string negative electrode, the anode of two neighboring voltage-stabiliser tube is connected with negative electrode.Resistance electricity
Hold resistance and electric capacity that series loop includes series connection.
The operation principle of above-mentioned mixed high-voltage device is specifically divided into quiescent operation, normal turn-off process, normal hard switching and opens
By journey and normal Sofe Switch opening process.
In order to better illustrate above-mentioned operation principle, to Fig. 1 in each symbol illustrate：J1~J55 are represented respectively
JFET, M1Represent MOSFET, R1~R5The resistance in 5 resistance capacitance series loops, C are represented respectively1~C55 electricity are represented respectively
Electric capacity in resistance capacitances in series loop, DZ1~DZ5The voltage-stabiliser tube string in 5 JFET drive circuits, D are represented respectivelyF1~DF5Respectively
The diode in 5 JFET drive circuits is represented, MGD1 represents MOSFET and drives resistance, JGD1~JGD5 to represent 5 JFET and drive
Dynamic resistance, CJSRepresent mixed high-voltage device source electrode, CJDRepresent mixed high-voltage device drain, CJGRepresent mixed high-voltage device gate
Pole, CJS1~CJS5J is represented respectively1~J5Source electrode, CJG1~CJG5J is represented respectively1~J5Driving node, i.e., 5 JFET drive
The output end of dynamic circuit, PGS represents drive pulse signal.
A, quiescent operation (i.e. no switch motion)：Now it is added in CJGDrive circuit output signal be -5V or 0V (0V
I.e. drive circuit does not work), this value is less than M1Gate pole threshold value, therefore M1It is off state.When high-voltage dc voltage accesses mixed type
The CJ of high tension apparatusDAnd CJSBetween when, M1Drain electrode and source electrode both end voltage can gradually rise；Now R1C1Series loop two ends electricity
Pressure also rises therewith, and DZ1And DF1Inevitable reversely cut-off；Although M1Drain electrode and source electrode both end voltage and R1C1Series loop two
The climbing of terminal voltage is different, but in this mode, final running status is to work as CJG1And CJGBoth end voltage is equal to DZ1Number
During value, DZ1It is breakdown, hereafter M1Drain electrode and source electrode and R1C1Series loop both end voltage is by DZ1Clamper is to fixed numbers, i.e. M1
It is pressure-resistant by DZ1Breakdown voltage is determined.If high-voltage dc voltage is very high, DZ2~DZ5Can breakdown successively, i.e. CJG2~CJG5
Continue to be clamped, the process can ensure SiC MOSFET and each SiC JFET bear resistance to be pressed in device nominal value range
It is interior, power device will not be damaged.Certainly, side circuit use can consider voltage margin, general CJG5Will not be clamped, i.e. J5One
It is directly conducting state, high-voltage dc voltage is by SiC MOSFET and 4 SiC JFET (J1~J4) share and bearing.
B, normal turn-off process：Now it is added in CJGDrive circuit output signal -5V is switched to by positive voltage, this value be less than M1
Gate pole threshold value, therefore M1Into turn off process.After side circuit turn off process starts, the CJ of mixed high-voltage deviceDAnd CJSIt
Between necessarily bear certain high-voltage dc voltage, therefore M1Drain electrode and source electrode both end voltage will rise first；Now M1Channel part
Electric current is transferred to J1Drive circuit circulation, R1C1Series loop both end voltage necessarily also rises therewith, and DZ1With diode DF1
Inevitable reversely cut-off；Because the climbing of M1 drain electrodes and source electrode both end voltage is less than R1C1The climbing of series loop both end voltage
(M1The output capacitance value of drain electrode and source electrode compares C1Value is big), therefore, hereafter M1Drain electrode and source electrode both end voltage rise to certain numerical value
When, R1C1Series loop both end voltage is raised to M1Drain electrode and source electrode both end voltage and JFET threshold voltage sums, i.e. J1Grid
The gate pole threshold voltage for becoming smaller than JFET poor with source electrode both end voltage, J1Begin to turn off process, subsequent J1Drain electrode and source electrode two ends
Voltage begins to ramp up, R2C2Series loop both end voltage also synchronously rises；Same principle, due to J1Drain electrode and source electrode both end voltage
Climbing be less than R2C2Climbing (the J of series loop both end voltage1The output capacitance value of drain electrode and source electrode compares C2Value is big), work as J1
When drain electrode and source electrode both end voltage rise to certain numerical value, J2Also begin to turn off process；J3~J5Turn off process be similar to, such as Fig. 2
Shown, each silicon carbide device shut-off is a progressive process.Additionally, as shown in figure 3, the voltage shared of each power device is all in DZ1
~DZ5Under breakdown voltage, whole turn off process is without DZ1~DZ5Puncture.Because switching frequency under normal circumstances is higher,
Within each switch periods very short time, CJG1~CJG5The potential of each node is not greatly changed, i.e., normal turn-off process is not
Need by DZ1~DZ5To maintain CJG1~CJG5The potential of each node, now its potential is by rationally setting C1~C5Numerical value is controlled
The voltage build-up rate of system is maintained.
C, normal hard switching opening process：
(1) CJ is just added to when opening signalGWhen, R1C1The C of series loop1Electric discharge, D are not had startedF1、DZ1All it is reverse cutting
Only, now all SiC JFET cut-off states are unaffected；Due to M1Grid receive drive positive pulse, therefore, M1Output electricity
Appearance begins through M1Channel discharge, M1Drain electrode and source electrode both end voltage begin to decline.Due to R1C1The C of series loop1Electric capacity is not yet
Electric discharge, i.e. node CJG1Relative potentials keep it is constant, with M1 drain electrode and source electrode both end voltage decline, i.e. node CJS1Electricity
Gesture declines, J1Grid and source electrode both end voltage difference become greater than the gate pole threshold voltage of SiC JFET, J1Start slow conducting, i.e.,
J1Drain electrode and source electrode both end voltage begin to decline, now R1C1The C of series loop1Electric capacity passes through J1Gate discharge, i.e., equivalent to
Output J1Drive pulse signal.
(2) with J1It is open-minded, J1Output capacitance begin through J1Channel discharge, J1Drain electrode and source electrode both end voltage start
Decline.Due to R2C2The C of series loop2Electric capacity does not discharge yet, i.e. node CJG2Relative potentials keep it is constant, with J1Drain electrode and
Source electrode both end voltage declines, i.e. node CJS2Potential decline, J2Grid and source electrode both end voltage difference become greater than SiC JFET's
Gate pole threshold voltage, J2Start slow conducting, now R2C2The C of series loop2Electric capacity passes through J2Gate discharge, i.e., equivalent to defeated
Go out J2Drive pulse signal.
(3) J3, J4, J5 using all fours opening process, the overall process of all devices is associated cross, be only according to
One small time delay (about 20~50ns) of secondary difference, as shown in figure 4, its priority time delay opened successively is connected by resistance capacitance
The Capacity control in loop.
Etc. (4) after all devices are all opened, it is added to CJGDrive signal pass through DF1~DF5The grid of each SiC JFET of clamper
Voltage, it is ensured that the grid of SiC MOSFET and all SiC JFET all in gate pole threshold voltage more than, can be fully on, and
Conducting resistance is reduced with this.
D, normal ZVS Sofe Switch opening process：The difference of ZVS Sofe Switch opening process and hard switching opening process is,
Now CJGThere is no drive signal, and now sense of current is opposite.Specific principle is as follows：
(1) now CJGWithout drive signal, R1C1The C of series loop1Electric capacity does not have started electric discharge, DF1、DZ1All it is reverse cutting
Only, now SiC MOSFET and all SiC JFET cut-off states are unaffected；Due to sense of current conversely, therefore, this is anti-
To electric current to M1Output capacitance electric discharge, M1Drain electrode and source electrode both end voltage begin to decline.Due to R1C1The C of series loop1Electric capacity
Do not discharge yet, i.e. node CJG1Relative potentials keep it is constant, with M1Drain electrode and source electrode both end voltage decline, i.e. node CJS1's
Potential declines, J1Grid and source electrode both end voltage difference become greater than the gate pole threshold voltage of SiC JFET, J1Start slow conducting,
J1Drain electrode and source electrode both end voltage begin to decline, now R1C1The C of series loop1Electric capacity passes through J1Gate discharge, i.e., equivalent to
Output J1Drive pulse signal.
(2) with J1It is open-minded, J1Output capacitance begin through J1Channel discharge, while reverse current is also to J1Output
Electric capacity discharges, J1Drain electrode and source electrode both end voltage begin to decline.Due to R2C2The C of series loop2Electric capacity does not discharge yet, i.e. node
CJG2Relative potentials keep it is constant, with J1Drain electrode and source electrode both end voltage decline, i.e. node CJS2Potential decline, J2Grid
The gate pole threshold voltage for becoming greater than SiC JFET poor with source electrode both end voltage, J2Start slow conducting, now R2C2Series loop
C2Electric capacity passes through J2Gate discharge, i.e., equivalent to output J2Drive pulse signal.
(3)J3, J4, J5Using the opening process of all fours, the overall process of all devices is associated cross, be only according to
It is secondary difference one small time delay, the priority time delay that it is opened successively by resistance capacitance series loop electric capacity and reverse current size
Control.
Etc. (4) after all devices are all opened, although M1Grid there is no drive signal, but reverse current can walk MOSFET
Corresponding parasitic diode, and the grid of all JFET is all in " 0 " current potential, thus all JFET grid voltage all in gate pole
It is more than threshold voltage, can be fully on, all JFET participate in conducting without corresponding parallel diode during being somebody's turn to do.If this
After process, M1Grid adds drive signal, i.e. SiC MOSFET to realize synchronous rectification pattern, and reverse current can be by SiC
MOSFET parasitic diodes are transferred to the passage of SiC MOSFET, and conduction voltage drop is reduced with this.
Above-described embodiment is situation when taking N=5, and certain N is alternatively other positive integers, and specific numeral is according to actual feelings
Depending on condition.
The circuit power part of above-mentioned mixed high-voltage device by silicon carbide device connect, and by voltage-stabiliser tube, diode,
The elements such as resistance, electric capacity realize that JFET drives, and final mixed type high tension apparatus can realize at least high withstand voltage of 6kV, with respect to it
His high tension apparatus, this high tension apparatus drives fairly simple, and switching loss is smaller, and conduction loss is relatively small, strong antijamming capability,
Low cost, the converter power density of its composition is high, is capable of achieving high-frequency, high efficiency and high power density, is applicable mesohigh electricity
Power electronic converter application field.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, on the premise of the technology of the present invention principle is not departed from, some improvement and deformation can also be made, these improve and deform
Also should be regarded as protection scope of the present invention.
Claims (5)
1. the mixed high-voltage device of silicon carbide MOSFET and JFET is based on, it is characterised in that：Including MOSFET, N number of JFET, N number of
The drain electrode of JFET drive circuits, the source electrode of mixed high-voltage device, the grid of mixed high-voltage device and mixed high-voltage device；
The source electrode of MOSFET is connected with the source electrode of mixed high-voltage device, and the grid of MOSFET connects with the grid of mixed high-voltage device
Connect, N number of JFET is sequentially connected in series, i-th source electrode connection of the i+1 JFET adjacent thereto that drains of JFET, i is integer, 0<i
<N, the 1st source electrode of JFET is connected with the drain electrode of MOSFET, and the drain electrode of n-th JFET is connected with the drain electrode of mixed high-voltage device；
N number of JFET drive circuits are sequentially connected in series, and the i+1 JFET that the output end of i-th JFET drive circuit is adjacent thereto drives
The input connection of dynamic circuit, the input of the 1st JFET drive circuit is connected with the grid of mixed high-voltage device, N number of JFET
Grid of the output end of drive circuit respectively with N number of JFET is connected.
2. the mixed high-voltage device based on silicon carbide MOSFET and JFET according to claim 1, it is characterised in that：Also wrap
Including MOSFET drives resistance and N number of JFET to drive resistance；MOSFET drives one end of resistance to be connected with the grid of MOSFET, another
End be connected with the grid of mixed high-voltage device, JFET drivings resistance two ends respectively with the output end of JFET drive circuits and this
The JFET grids connection that JFET drive circuits drive.
3. the mixed high-voltage device based on silicon carbide MOSFET and JFET according to claim 1 and 2, it is characterised in that：
JFET drive circuits include voltage-stabiliser tube string in parallel, diode and resistance capacitance series loop, the anode of voltage-stabiliser tube string, two poles
The anode of pipe and one end of resistance capacitance series loop connect into first node, and first node is the input of JFET drive circuits
End, the other end of the negative electrode of voltage-stabiliser tube string, the negative electrode of diode and resistance capacitance series loop connects into Section Point, second
Node is the output end of JFET drive circuits.
4. the mixed high-voltage device based on silicon carbide MOSFET and JFET according to claim 3, it is characterised in that：Voltage stabilizing
Pipe string include several series connection voltage-stabiliser tube, first anode of voltage-stabiliser tube as voltage-stabiliser tube string anode, last voltage stabilizing
The negative electrode of pipe as voltage-stabiliser tube string negative electrode, the anode of two adjacent voltage-stabiliser tubes is connected with negative electrode.
5. the mixed high-voltage device based on silicon carbide MOSFET and JFET according to claim 1, it is characterised in that：N=
5。
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| CN108092493A (en) * | 2017-12-26 | 2018-05-29 | 南京工程学院 | A kind of SiC MOSFET series circuits |
| CN108696268A (en) * | 2018-05-24 | 2018-10-23 | 南京工程学院 | A kind of direct driving circuit of open type GaN FET |
| CN110429562A (en) * | 2019-08-22 | 2019-11-08 | 西南交通大学 | Hybrid high voltage DC breaker and its control method based on normal open type SIC device |
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| CN108092493A (en) * | 2017-12-26 | 2018-05-29 | 南京工程学院 | A kind of SiC MOSFET series circuits |
| CN108092493B (en) * | 2017-12-26 | 2020-12-25 | 南京工程学院 | SiC MOSFET series circuit |
| CN108696268A (en) * | 2018-05-24 | 2018-10-23 | 南京工程学院 | A kind of direct driving circuit of open type GaN FET |
| CN108696268B (en) * | 2018-05-24 | 2021-09-24 | 南京工程学院 | Direct drive circuit of normally-open GaN FET |
| CN110429562A (en) * | 2019-08-22 | 2019-11-08 | 西南交通大学 | Hybrid high voltage DC breaker and its control method based on normal open type SIC device |
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