CN106133891A - The laser metal that writes direct of pulse mode - Google Patents
The laser metal that writes direct of pulse mode Download PDFInfo
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- CN106133891A CN106133891A CN201580015581.9A CN201580015581A CN106133891A CN 106133891 A CN106133891 A CN 106133891A CN 201580015581 A CN201580015581 A CN 201580015581A CN 106133891 A CN106133891 A CN 106133891A
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- sintered
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/705—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thick-film circuits or parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Abstract
A kind of method for manufacturing, including: with substrate (28) coated substrates (22), this substrate contains the material to be patterned on substrate.By pilot pulse energetic beam illumination on the track of pattern, in order to cause in the case of the material in the most fully sintered pattern, along pattern, material is adhered to substrate, thus pattern is fixed in substrate.Substrate remaining on substrate outside by fixed pattern is removed, and the material after removing substrate, in sintering pattern.
Description
Cross-Reference to Related Applications
This application claims the rights and interests of the U.S. Provisional Patent Application 61/977,766 submitted on April 10th, 2014.The application
Still the 28 days February in 2014 requiring the rights and interests of the U.S. Provisional Patent Application 61/765,808 submitted on February 18th, 2013 carries
The part continuation application of PCT Patent Application PCT/IL2014/000014 handed over.All these related applications pass through at this to quote also
Enter herein.
Technical field
This invention relates generally to the production of printed wiring on circuit substrate, and more particularly to for metallicity
The method and system write direct.
Background technology
The Direct Laser sintering of metal ink is the metallized known technology for printed wiring.Such as, United States Patent (USP)
Application discloses 2008/0286488 description based on non-conductive film is deposited on the surface of substrate the method forming conducting film.Should
Film contains multiple copper nano-particle, and is sintered by light or melt these copper nano-particles and make at least some of exposure of this film
Be exposed to light so that this be exposed partially electronically conductive.
Kumpulainen et al. is at " Low Temperature Nanoparticle Sintering with
Continuous Wave and Pulse Lasers " (Optics&Laser Technology, the 43rd phase in 2011, the 570th
To page 576) described in Direct Laser sintering technology.These authors relate to " can printed electronic ", are wherein printed on substrate
Nanoparticle ink on surface contains additive (such as dispersant and carrier liquid), these additives by change viscosity and
The nanoparticle of separation ink provides good printing.In sintering processes, ink particle is heated to a certain specific
Ink temperature, and make carrier liquid and dispersant evaporate from this ink.Extra heating after evaporation causes these nanoparticles
Son starts cohesion.It is said and laser sintered realize short sintering time and selective sintering, borrow so that printed structure contains
Rapid wear active block produced by other technologies is helped to be possibly realized.This paper describes and comes by the different types of laser of following two
The test completed: impulse wave and continuous wave.
After the priority date of present patent application, Theodorakos et al. is at " Selective Laser
Sintering of Ag Nanoparticles Ink for Applications in Flexible Electronics”
(Applied Surface Science, the 336th phase in 2015, page 157 to 162) further describes laser sintering technology.
These author investigation as on flexible substrate the efficient tool of selective laser sintering Ag nanoparticle ink layer with
The probability of the different lasing light emitter of three below of 532nm with 1064nm operation: continuous wave (CW) or pulse nanosecond laser and pulse
Picosecond laser.Heat-affected zone is limited to being illuminated district only around ink layer by theoretical modeling instruction pico-second laser pulse
Several microns.These predictions the most empirically confirm.
Summary of the invention
Embodiments of the invention provide the enhancing write direct based on laser of the trace on the substrate method and
System.
Therefore according to embodiments of the invention, it is provided that a kind of method for manufacturing, comprising: use substrate coated substrates,
This substrate contains the material to be patterned on substrate, and by pilot pulse energetic beam illumination on the track of pattern with
Just cause in the case of the material in the most fully sintered pattern, along pattern, material is adhered to substrate, thus pattern is fixed
In substrate.Substrate remaining on substrate outside by fixed pattern is removed, and after removing substrate, sinters pattern
In material.
In certain embodiments, material to be patterned comprises nanoparticle.In the disclosed embodiment, in nanometer
The material of particulate forms is conduction, and pulsed energy beam comprises the radiation arteries and veins with selected flux of energy and repetitive rate
Punching so that the resistivity of the trace after fixed pattern keeps ratio by by fully sintered pattern after removing substrate
The final resistivity that material is realized is at least ten times greater.
Generally, pilot pulse energy beam includes: it is every that the pulse train of guiding energy beam is radiated in the track on substrate
On individual position.
In the disclosed embodiment, pulsed energy beam have at least 1MHz and may at least 10MHz pulse repeat
Rate.
Generally, in addition to material to be patterned, substrate also includes organic compound, and pilot pulse energy beam bag
Include the pulse train guiding the energy beam with selected every pulse flux, in order to the feelings of the material in the most fully sintered pattern
This organic compound is caused to evaporate from substrate under condition.It is selected in the every pulse flux applied in fixed pattern so that material is protected
Hold sufficiently porous there is not degrading or standard in the case of delamination of the material caused by the evaporation of this organic compound
Permitted this organic compound to be evaporated by the hole in material.
In certain embodiments, sintered material includes: integral sintered process is applied to the pattern being fixed on substrate.Or
Person, sintered material includes: the pattern that the pulse of pilot pulse energy beam is sintered to fix on substrate further.
In the disclosed embodiment, coated substrates includes: base on dry substrate before the substrate that irradiation is coated
Matter.Additionally or as selection, remove substrate and include: apply solvent to remove remaining base on the substrate outside by fixed pattern
Matter.
According to embodiments of the invention, also provide for a kind of method for manufacturing, comprising: use substrate coated substrates, should
Substrate contains the material to be patterned on substrate, and guides the pulse energy comprising the pulse with ramp type time domain waveform
Amount Shu Yiyi flux is radiated on the point on coated substrate, and this flux be enough to this material be fixed to this substrate and at this
This material is sintered at Dian.
In the disclosed embodiment, in addition to the material of substrate to be fixed to, substrate also includes organic compound, and
And selected ramp type time domain waveform and flux, in order in the stripping of the material being not resulted in caused by the evaporation of this organic compound
This organic compound before sintered material is caused to evaporate from substrate in the case of erosion or delamination.In certain embodiments, material
Including nanoparticle, and sintered material causes this nanoparticle to melt at this point.
In the disclosed embodiment, pulse has the persistent period of no more than 20ns.
In certain embodiments, pilot pulse energy beam includes: be irradiated on coated substrate by pilot pulse
Define the pattern forming material on the point sequence of pattern on substrate.Point in sequence can be nonoverlapping.Generally,
The method includes: after patterning, substrate remaining on the substrate outside the track of pattern is removed.
According to embodiments of the invention, additionally provide a kind of system for manufacturing, including: coating machine, it is configured
For using substrate coated substrates, this substrate contains the material to be patterned on substrate.Write machine is configured to guide
Pulsed energy beam is radiated on the track of pattern, in order to cause along pattern in the case of the material in the most fully sintered pattern
Material is adhered to substrate, thus pattern is fixed in substrate.Substrate remove machine be configured to by by fixed pattern it
On outer substrate, remaining substrate removes.Sintering machine is configured to after removing substrate sinter the material in pattern.
According to embodiments of the invention, also provide for a kind of system for manufacturing, including: coating machine, it is configured to
Using substrate coated substrates, this substrate contains the material to be patterned on substrate.Write machine is configured to guiding and comprises tool
The pulsed energy beam having the pulse of ramp type time domain waveform is radiated on the point on coated substrate with a flux, this flux foot
This material is fixed to this substrate and sinters this material at this point.
Accompanying drawing explanation
The most described in detail below will be more fully understood by the present invention together with accompanying drawing, attached
In figure:
Fig. 1 is to illustrate according to an embodiment of the invention for the behaviour of the system write direct based on laser He this system
Stage in work schematically visualize diagram；
Fig. 2 A to Fig. 2 E is according to an embodiment of the invention to form the successive stages diagram of the process of the pattern of trace
The schematic plan of substrate of the pattern writing this trace thereon；
Fig. 3 A and Fig. 3 B be according to an embodiment of the invention with formed trace process successive stages diagram at it
The schematic cross sectional view of the substrate of upper this trace of write；
Fig. 4 A to Fig. 4 D be according to an embodiment of the invention at the continuous time of the fixing period of trace diagram
The schematic cross sectional view of the substrate of this trace is write on it；
Fig. 4 E is substrate and the trace of Fig. 4 A to Fig. 4 D after the annealing of trace according to an embodiment of the invention
Schematic cross sectional view；
Fig. 5 is to illustrate to be written into for the fixing trace being written on substrate and damage according to an embodiment of the invention
The curve chart of the dependency of the different threshold pulse energy of the trace on substrate；
Fig. 6 A be according to an embodiment of the invention on it by there are the pulsed beams of the pulse parameter of change at dot matrix
The schematic plan of the substrate of luminous point is write at row；And
Fig. 6 B is according to an embodiment of the invention by the figure applying to be formed on substrate to point sequence by pulsed beams
The schematic plan of case.
Detailed description of the invention
General introduction
Such as explained in above-mentioned PCT Patent Application PCT/IL2014/000014, metal ink and other nanoparticles
The single step Direct Laser sintering of the sinterable ink of son does not generally provide full and uniform result.(want in this specification and right
Term in book " nanoparticle " is asked to be used for the microcosmic particle meaning to have at least one size less than 100nm.) this problem is at least
Arise partially from the conduction of heat occurred during local sintering processes.Uneven thermal diffusion under the conditions of these causes thermal change,
This thermal change causes inconsistent sintering then.This effect is in the high resolution design of the little metallicity processing the most several microns
It is the most significant during change.Meanwhile, the direct sintering of metal ink needs high laser flux (the most tens of to hundreds of J/cm2), should
High laser flux makes when processing big zone map to process slowly and poor efficiency.
In certain embodiments of the present invention, in the way of the uniformity strengthening gained trace and reliability, write step is made
Separate with sintering step.Base plate coating has applicable substrate, and can be dried this substrate after coating to remove excessive solvent.
(these substrate generally include the ink containing nanoparticle, paste or suspension, and the simplest
Be commonly referred to as " NP ink ".) then, in the case of the most fully sintered nanoparticle, pulse energy electron gun (such as laser) exists
Surface scans to write desired pattern.The term used in the present specification and claims is " the most complete
In the case of sintering " mean that the nanoparticle in the entirety of substrate keeps being virtually decoupled from each other so that at metal nanoparticle
Situation in, the resistivity of the trace at this stage is still than the final resistivity big at least ten that will realize after fully sintered
Times.
Wherein pattern referred to herein as " is fixed " in substrate by this stage of the process of energy beam written pattern.?
In some embodiment, light beam be enough to cause that along this pattern material is adhered to substrate to have but has substantially below been used for
The track scanning overhead of the pulse train (or " string ") of the flux of the threshold value of clean burn knot pattern on substrate to be write.This is fixed
Step makes substrate stabilisation remove (relative to the most radiation exposed substrate) so that opposing is follow-up.By reducing owing to being trapped in substrate
The probability of the damage caused by rapid expanding of gas, the use of the pulsed irradiation in this step can strengthen the trace of pattern
Quality.
During this fixing stage, before fully sintered nanometer particle material, this material keeps sufficiently porous to permit
Organic compound in substrate is evaporated by the hole in material, therefore prevent originally can by organic compound the most quickly
The degrading or delamination of the material that caused of evaporation.For guaranteeing this type of controlled evaporation, laser (or other energy sources) generally draws
Lead each position that pulse train is radiated in pattern with high-repetition-rate (such as, at least 1MHz, and be likely larger than 10MHz)
On.Selected every pulse flux so that maintain the desired porosity of substrate until completing to fix.
After being fixed by pattern the most in like fashion, remove substrate from all on-fixed regions so that only retain and stablized
The pattern changed.Such as, by applying chemical solvent or can have been degraded this by radiation and removed.Generally, then burn in entirety
Knot is uniformly heated up substrate so that the nanoparticle sintered in remaining pattern in processing.Logical with when using Direct Laser sintering
The inhomogeneity often met with is compared, and the method realizes homogeneous metal.It is also useful especially for printing thick line, this is because
Laser fixing step ratio is the most laser sintered more insensitive to rugosity, in an oven, the most integral sintered to crude oil ink marks
Line works well.
Therefore, these embodiments provide the simple and quick metalized with the step more less than conventional method.Should
The first step processed only relates to relatively low laser power.Subsequently, can use and there is the high-powered sources of big region overlay (such as
Thermal source or by the band of light of high-power flash lamp or high power laser light or laser array) perform to need high-throughout reality
Metallization step (integral sintered process).Owing to these embodiments avoid the high local being associated with single step Direct Laser sintering warm
Degree, therefore it is suitable to use in the patterning of accurate flexible substrate (such as plastics and paper tinsel).
In other embodiments, pulse laser or other energy beams are used for sintering and fixing.In this case, inventor
It has been found that the pulse ratio general pulse (such as square-wave pulse) of ramp type time domain waveform (temporal profile) realizes
The most more preferably result, the time dependent intensity of these general pulse is substantially uniform.Ramp type time domain waveform is
Favourable, this is because its cause sintering and therefore before fusing nanometer particle material organic compound from being coated on substrate
On substrate evaporation.Selected time domain waveform and pulse flux are to strengthen this effect, and therefore avoid due to organic compound
The degrading or delamination of the material being patterned caused by evaporation.These single step embodiments especially (but non-uniquely) are suitable to
The most sintered luminous point or the pattern being made up of these luminous points is formed on substrate.
The use (for fixing or direct sintering) of the pulse laser for writing direct in an embodiment of the present invention
The high-resolution with the probability of adaptive calibration can be realized, as in digital imaging technology.Metal wire and public by institute
Other features that the technology opened is formed can reach width little as several microns.Resolution is only by can generally focus to 1-2 μm
Or the laser spot sizes of less scope limits.Resolution and line can be improved by tuning laser parameter during scanning
The quality of definition.Can draw arbitrary graphic pattern in like fashion, these patterns may be from computer-aided design and computer aided manufacturing
Manufacture (CAD/CAM) data are helped to immediately arrive at.
In certain embodiments, in the case of not contacting substrate, write and the whole circulation of sintering are performed.This feature pair
Application in such as photovoltaic cell and the production of plastic electronic paper tinsel is particularly advantageous.
Other potential application of technology described herein comprise such as: liquid crystal display and Organic Light Emitting Diode
(OLED) the display back-end metallation of display, touch screen metallization, the shunt lead of OLED luminaire and plastic foil
On printed electronic circuit and equipment.Techniques described herein can be the most mutatis mutandis in (not only including gold with various NP materials
Belong to and include quasiconductor and insulating particles (such as ceramic particle)) at various electrolytes, pottery, quasiconductor, polymer, paper
With written pattern on metal basal board.
Although the embodiments described herein specifically refers to the formation of single metal layer for the sake of simplicity, but is substituting
In embodiment, can by this technology suitably repeat trace is write in multiple layer, the most each layer uses identical or not
Same ink.
System description
With reference now to Fig. 1 and Fig. 2 A to Fig. 2 E, these accompanying drawings be schematically illustrated according to an embodiment of the invention based on
The system 20 write direct of laser and process.Fig. 1 is to illustrate the component devices in the process performed by system 20 and stage
Visualization diagram.Fig. 2 A to Fig. 2 E is being write thereon by the pattern of trace in system 20 of the successive stages diagram to process
The schematic plan of substrate 22.As mentioned earlier, substrate 22 can include (such as) glass or other electrolytes, pottery
Porcelain, quasiconductor, plastic cement paper tinsel or other polymeric materials, paper or metal.
First, coating machine 24 with the uniform substrate of a layer thickness 28 (Fig. 2 B) (such as metal nanoparticle (NP) ink,
Metal NP paste or metal composite ink or paste) coated substrates 22 (Fig. 2 A).This ink or paste can contain (example
As) silver, copper, nickel, palladium and/or golden nanometer particle and the alloy of these metals, or be probably non pinetallic nano particle (such as silicon
Or Nano Ceramic Particles).The layer thickness of substrate 28 can be depending on required final result and becomes to more than 10 μm from about 0.2 μm
Change.Coating machine 24 can apply any applicable region coating technique (such as silk screen printing, slit die as known in the art
Formula coating or bar type coating, spraying, intaglio plate coating or spin coating).
Alternatively, fabric dryer 26 is dried the substrate applied to substrate 22.The ink that applied by coating machine 24 or
Paste usually contains substantial amounts of solvent, and the metal volume content at this stage is no more than about 40%.Therefore, in laser scanning
Substrate is made to become dry before step so that the stability strengthening substrate is probably favorably with the loss reducing the laser energy to solvent
(although not being enforceable).Possible drying means comprises low temperature dries (by convection current or by radiation), air stream
Move, be vacuum dried or the combination of these technology.
The pattern of trace 42 is fixed in substrate 28 by Myocardial revascularization bylaser machine 30, as shown in FIG. 2 C.Implement typical
In mode, the substrate 22 that it is coated with substrate 28 is arranged on applicable workbench 34, and optical beam scanner 36 is at base
The light beam of plate scanning overhead pulse laser 32 (or other impulsive energy source being suitable for).
Making substrate be exposed to the laser pulse sequence of distinct by the pre-position on film, laser 32 is by institute's phase
The pattern hoped " writes " in substrate.Generally by controller 38 based on the CAD/CAM data being suitable for being stored in memorizer 40
Determine this pattern.As the most described further below, select and comprise wavelength, spot size, flux, persistent period, pulse
The pulse parameter of shape, scanning speed and repetitive rate is so that the quality of optimization pattern.For high yield output, can at substrate not
Scan multiple laser beam (by multiple laser or by by single high power pulsed laser beam splitting Cheng Ziguang with overlying regions simultaneously
Restrainting and produce, as shown in fig. 1), the most each light beam is independently controlled.
Various types of laser and laser system can be used in Myocardial revascularization bylaser machine 30.In certain embodiments, with at a high speed
Rate directly modulation laser diode source is to launch the arteries and veins of desired shape in the time scale from a nanosecond to few tens of nano-seconds
Punching.In some such embodiment, pulse shape is ramp type (as the most described further below), and it has through adjusting
Humorous to coordinate the ramp time of trace rugosity.Pulse parameter is tuned, wherein when needs superfine wire also dependent on track width
Relatively short pulse is used to rush.The selection of pulse parameter also depends on whether machine 30 is only used for carry out integral sintered fixing subsequently,
Or whether laser 32 is used for fully sintered trace.
Or, CW lasing light emitter (such as CW optical-fiber laser) can be modulated with required high-repetition-rate thus institute's phase is provided
The pulsed beams hoped.Quick external modulator (such as electrooptic modulator or acousto-optic modulator) can be used for this purpose.
Fig. 3 A is to illustrate by write machine 30, in trace 42 to be fixed on substrate according to an embodiment of the invention
Schematic cross sectional view in 28.At this stage, trace 42 is typically free of the most sintered metal, and is in owing to swashing
Light exposes (as photon effect or the result of heat effect) to the open air and is more adhered to substrate 22 than the substrate 28 of surrounding and more stable to support
The anti-state of matter removed from substrate 22.As mentioned above, the laser parameter of selected write machine 30 is to provide base
Local required in matter character changes.Optimal parameter will depend upon which accurate host material and size and the write side selected
Method and change, and will be tested by experience in each case and assess and determine.In any case, applied at this stage
Power more much smaller than the power required for the nanoparticle in fully sintered substrate.
After irradiation, substrate removes machine 44 and loose substrate 28 is removed from the Zone Full of substrate 22, thus
Only leave trace 42 (Fig. 2 D).Machine 44 can include (such as) wherein by substrate submergence to wash away the molten of substrate outside pattern
Agent groove.As alternatively or additionally, machine 44 can apply the other kinds of technology that removes (such as to shell the chemistry of loose substrate
Erosion or physics degrade).
Fig. 3 B is the schematic cross sectional view of remaining trace 42 on the metacoxal plate 22 being removed substrate 28 by machine 44.
Finally, sintering machine 46 is sintered in remaining trace 42 on the metacoxal plate 22 that substrate removes, thus produces such as
Sintered trace 50 shown in Fig. 2 E.If substrate 22 (such as, it is typically the situation of glass substrate) is suitable for this process,
Then sintering machine 46 can include normal sintering baking oven.Or, sintering machine 46 can use and generally more preferably be suitable for sensitive substrate
The photon sintering of (such as plastic foil).Again or, other sintering methods may be adapted to sensitive substrate, such as, plasma sintering or
Microwave sintering, both can in the case of not damaging lower floor's plastic base sintering metal ink logo.
It is said that in general, when processing copper ink (trend easily aoxidized due to copper) in ambient air and processing containing easily
When the ink of other metals of oxidation, photon sintering (or microwave sintering or plasma sintering) is preferable over oven sintered.Also
The oven sintered of copper ink can be used in suitable atmosphere (that is, nonoxidizing atmosphere and/or reducing atmosphere).
As shown in Figure 1 sintering machine 46 uses and has the high-intensity light source 48 in the surface of substrate 22 scanning
Photon sinters.Source 48 can include the set of the laser diode bar that (such as) be arranged in column or stack, the most even at great Qu
Required flux is provided above territory.Commercial laser diode bars is used (such as near infra red region (substantially 800-1000nm)
By Oclaro Inc. (Jennings technology city), Coherent Inc. (Santa Clara city) or
Jenoptik (Jena, Germany city) produce those) mean power of the most thousands of watts can be realized.
Description can be applied desired pattern is fixed on base by write machine 30 by the next part of this specification
Method in matter 28.In alternate embodiment shown in Fig. 6 A and Fig. 6 B, write machine 30 also can be by by sufficient energy
The impact point defining pattern applied to substrate is sintered.In the situation of this latter, it may be unnecessary to individually sinter
Machine 46.Can be together with the material described in above-mentioned PCT Patent Application PCT/IL2014/000014 and method and this area
Known in, other materials being suitable for and method apply technology described herein.
Pulse laser pattern is fixed
With reference now to Fig. 4 A to Fig. 4 E, these accompanying drawings are to be written on substrate by trace 52 according to an embodiment of the invention
Successive stages at the schematic cross sectional view of substrate 22.Fig. 4 A to Fig. 4 D was shown at the continuous time of fixing period of trace
Substrate 28, and Fig. 4 E illustrates trace 52 after anneal.
Specifically, Fig. 4 A to Fig. 4 D illustrates the tired of the train of pulse on the appointment position guided to substrate 28 by laser 32
Long-pending effect.When processing beginning, in the volatile organic component of the large volume that nanoparticle 50 is suspended in substrate 28.Each continuously
INFRARED PULSE LASER IRRADIATION substrate and make the organic principle of additional quantity evaporate so that the density of the nanoparticle 50 in substrate 28 from
One pulse increases to next pulse.But, due to the thermal diffusion in substrate and substrate, density above the volume of substrate
Increase is substantially uniform.Therefore, as shown in fig.4d, even nearly all organic material is evicted out of substrate it
After, it is retained between the nanoparticle 50 in substrate 28 by its hole that evaporation material can be made to escape.As shown in figure 4e, only
Melt nanoparticle together to form trace 52 during follow-up sintering step.
By contrast, inventor has been found that when CW laser is fixed for pattern, and nano-particles density often exists especially
The upper strata of substrate increases, thus leaves the organic material being trapped in bottom.The heating of these organic materials being captured can be led
Cause the evaporation of quick explosion type, thus cause degrading or delamination of the nanometer particle material of surrounding, therefore make to be formed on substrate
The degrading quality of trace.
By contrast, when impulse radiation is used for fixing, selected pulse parameter is to promote during the process of train of pulse
The gradually evaporation of the organic principle of substrate 28, avoids the solidification on the upper strata of nanoparticle 50 simultaneously.Inventor it has been found that
The short pulses generation optimum of the pulse width in the range of about 1ns to few tens of nano-seconds.High-repetition-rate (at least 1MHz, and
And possibility 10MHz or higher) it is desired to realize the most fixing of trace and high disposal quantum of output therefore.Selected pulse
Flux and other parameters are generally to make quantum of output maximize as far as possible in the case of not damaging trace.
Fig. 5 is to illustrate according to an embodiment of the invention for the curve of the working window fixing by the trace of laser pulse
Figure.Data point in curve chart indicates the number of pulses of the specified point applied to substrate 22 on the horizontal scale, and at vertical coordinate
Upper instruction every pulse energy flux.Lower curve 60 indicates and is fixed in substrate by pattern required for any specific pulse quantity
The minimum flux wanted.In other words, as long as the pulse at specified point has at least this minimum flux, substrate for certain pulses quantity
Just wash away from this point after will not be in the fixing stage.Upper curve 62 indicates can not damage mark for specific pulse quantity
The flux peak used in the case of line.Exceeding this flux level, the quickly heating of substrate is prone to cause degrading and/or delamination.
Therefore, curve 60 and curve 62 define the working window that the pulse of substrate 28 is fixed.As in fig. 5 it can be seen that relatively
Big small throughput number of pulses produces wider window and therefore produces large range of process franchise.In these boundaries, optional
Select pulse flux and the number of pulses applied to each position fixing desired to produce when making process quantum of output maximize
Hard.Optimum selection also will depend upon which other processing parameters (thickness of such as substrate 28 and composition, and optical maser wavelength and luminous point big
Little).The matrix membrane that 460nm is thick use the diode laser with 980nm operation to produce curve 60 and 62.Or, can make
With in ultraviolet, the pulse laser of the form of other parts of visible ray or infra-red range.Pulse required for fixed pattern
Quantity (as reflected by curve 60) is often along with thickness exponentially scales.
Pulse laser sinters
Fig. 6 A is the most by having the pulsed beams of pulse parameter of change at dot matrix
The schematic plan of the substrate of luminous point 74,78 is write at row.In this embodiment, it is coated with by the substrate containing nanometer particle material
Cloth substrate.Pilot pulse laser beam is not only be enough to that material is fixed to substrate but also be enough to sintered material at each point in an array
Flux be radiated at this point on substrate.Laser beam in this situation is also two in pulse mode with 980nm operation
Pole pipe laser.Formed the peak power of laser pulse applied in luminous point 74 and 78 from the bottom of the array shown in Fig. 6 A to
Top increases, and the pulse duration increases from left to right, and wherein the maximum impulse persistent period is set about 20ns.At other
Similar results is obtained at wavelength.
Two different impulse waveforms are for sintering the luminous point shown in Fig. 6 A: rectangular pulse waveform 70 is used for sintering luminous point
74, and ramp type impulse waveform 72 is used for sintering luminous point 78.Instantaneous power in pulse was gradually increased with the pulse duration
In the sense that (wherein peak power occurs near the trailing edge of pulse), waveform 72 is " ramp type ".Selected ramp type time domain
Waveform and ramp type pulse flux are to be not resulted in degrading of the material caused by the explosion type of organic compound evaporates
Or in the case of delamination, cause organic compound to evaporate from substrate before sintering nanometer particle material.The leniently its peak work of scope
Rate and pulse duration can be seen that this favourable effect of ramp type waveform, as by shown in luminous point 78.By contrast, ripple is used
The luminous point 74 that shape 70 is formed represents degrading and the failure area 76 caused by delamination due to nanometer particle material.
Ramp type waveform 72 is formed in single sintered luminous point particularly useful on substrate.Due on substrate near zone
The lateral heat diffusion of the beam energy of side, these luminous points will be generally of the diameter bigger than laser beam self.(ramp type light beam
Waveform is less crucial in scanning the most online, this is because except initial point in addition to, each point in this line along with sintering before
Point and preheated.) the single luminous point of the type can be used to guided laser pulse irradiation on coated substrate
Define on substrate, on the point sequence of pattern, form this pattern.Point in this sequence can be nonoverlapping, i.e. is used for
The beam area of the laser pulse forming neighbouring luminous point need not self and overlaps, this is because each luminous point has ratio for solid
Fixed and sinter the area that the laser beam of this luminous point is bigger.After forming pattern in like fashion, as in the aforementioned embodiment, will scheme
On substrate outside the track of case, remaining substrate removes.
Fig. 6 B is according to an embodiment of the invention by applying to be formed on substrate to the sequence putting 82 by pulsed beams
The schematic plan of pattern 80.In this example, the line that pattern 80 includes the overlapping by luminous point 78 and formed, but point 82
Self does not overlap.Can be to be efficiently formed the pattern of the most any desired form in like fashion.
It will be appreciated that quote the various embodiments described above in an illustrative manner, and the invention is not restricted to the most specifically illustrate
With the content described.On the contrary, the scope of the present invention comprises combination and the sub-portfolio of various features described above, with
And those skilled in the art will envision and the most undocumented to these various spies after reading the above description
That levies changes and modifications.
Claims (38)
1. for the method manufactured, including:
Using substrate coated substrates, this substrate contains the material to be patterned on substrate；
By pilot pulse energetic beam illumination on the track of pattern, in order in the case of the material in the most fully sintered pattern
Cause, along pattern, material is adhered to substrate, thus pattern is fixed in substrate；
Substrate remaining on substrate outside by fixed pattern is removed；And
Material after removing substrate, in sintering pattern.
Method the most according to claim 1, material the most to be patterned includes nanoparticle.
Method the most according to claim 2, wherein the material in nanoparticle form is conduction, and wherein pulse energy
Amount bundle includes the pulses of radiation with selected flux of energy and repetitive rate so that the resistivity of the trace after fixed pattern
Keep than after removing substrate by least ten times greater for the final resistivity that realized by the material in fully sintered pattern.
Method the most according to claim 1, wherein pilot pulse energy beam includes: guide the pulse train of energy beam to irradiate
On each position in track on substrate.
Method the most according to claim 1, wherein pulsed energy beam has the pulse recurrence rate of at least 1MHz.
Method the most according to claim 5, wherein pulse recurrence rate is at least 10MHz.
Method the most according to claim 1, wherein in addition to material to be patterned, substrate also includes organic compound
Thing, and wherein pilot pulse energy beam includes: guide the pulse train of the energy beam with selected every pulse flux, in order to
This organic compound is caused to evaporate from substrate in the case of material in the most fully sintered pattern.
Method the most according to claim 7, is wherein selected in the every pulse flux applied in fixed pattern so that material
Keep sufficiently porous there is not the degrading or in the case of delamination of the material caused by the evaporation of this organic compound
Permit this organic compound to be evaporated by the hole in material.
Method the most according to any one of claim 1 to 8, wherein sintered material includes: process application by integral sintered
In the pattern being fixed on substrate.
Method the most according to any one of claim 1 to 8, wherein sintered material includes: pilot pulse energy further
The pattern that the pulse of bundle is sintered to fix on substrate.
11. methods according to any one of claim 1 to 8, wherein coated substrates includes: at the substrate that irradiation is coated
Substrate on dry substrate before.
12. methods according to any one of claim 1 to 8, wherein remove substrate and include: apply solvent to remove at quilt
Remaining substrate on substrate outside fixed pattern.
13. 1 kinds of methods for manufacture, including:
Using substrate coated substrates, this substrate contains the material to be patterned on substrate；And
Guide and include that the pulsed energy beam with the pulse of ramp type time domain waveform is radiated on coated substrate with a flux
Point on, this flux be enough to this material is fixed to this substrate and sinters this material at this point.
14. methods according to claim 13, wherein in addition to the material of substrate to be fixed to, substrate also includes organising
Compound, and wherein select ramp type time domain waveform and flux, in order to it is being not resulted in owing to the evaporation of this organic compound is drawn
The degrading or caused before sintered material this organic compound to evaporate from substrate in the case of delamination of the material risen.
15. methods according to claim 13, wherein material includes nanoparticle, and wherein sintered material causes this to receive
Rice corpuscles melts at this point.
16. methods according to claim 13, wherein pulse has the persistent period of no more than 20ns.
17. according to the method according to any one of claim 13 to 16, and wherein pilot pulse energy beam includes: by guiding arteries and veins
Punching is irradiated in and forms the pattern of material on substrate on the point sequence defining pattern on coated substrate.
18. methods according to claim 17, wherein the point in sequence is nonoverlapping.
19. methods according to claim 17, also include: after patterning, by the base outside the track of pattern
On plate, remaining substrate removes.
20. 1 kinds of systems for manufacture, including:
Coating machine, it is configured to use substrate coated substrates, and this substrate contains the material to be patterned on substrate；
Write machine, it is configured to pilot pulse energetic beam illumination on the track of pattern, in order to the most fully sintered
Cause in the case of material in pattern, along pattern, material is adhered to substrate, thus pattern is fixed in substrate；
Substrate removes machine, and it is configured to remove substrate remaining on the substrate outside by fixed pattern；And
Sintering machine, it is configured to after removing substrate sinter the material in pattern.
21. systems according to claim 20, material the most to be patterned includes nanoparticle.
22. systems according to claim 21, wherein the material in nanoparticle form is conduction, and wherein pulse
Energy beam includes the pulses of radiation having selected flux of energy with repetitive rate so that the resistivity of trace after fixed pattern
Keep than after removing substrate by least ten times greater for the final resistivity that realized by the material in fully sintered pattern.
23. systems according to claim 20, wherein this write machine is configured to guide the pulse train of energy beam to shine
Penetrate on each position in the track on substrate.
24. systems according to claim 20, wherein pulsed energy beam has the pulse recurrence rate of at least 1MHz.
25. systems according to claim 24, wherein pulse recurrence rate is at least 10MHz.
26. systems according to claim 20, wherein in addition to material to be patterned, substrate also includes organic compound
Thing, and wherein this write machine is configured to guide the pulse train of the energy beam with selected every pulse flux, in order to
This organic compound is caused to evaporate from substrate in the case of material in the most fully sintered pattern.
27. systems according to claim 26, are wherein selected in the every pulse flux applied in fixed pattern so that material
Material keeps sufficiently porous there is not degrading or the situation of delamination of the material caused by the evaporation of this organic compound
Lower this organic compound of allowance is evaporated by the hole in material.
28. according to the system according to any one of claim 20 to 27, and wherein this sintering machine is configured to integral sintered
Process the pattern being applied to be fixed on substrate.
29. according to the system according to any one of claim 20 to 27, and wherein this sintering machine is configured to apply further
The pulse of pulsed energy beam is sintered to fix the pattern on substrate.
30. according to the system according to any one of claim 20 to 27, also includes fabric dryer, and it is configured at irradiation warp
Substrate on dry substrate before the substrate of coating.
31. according to the system according to any one of claim 20 to 27, and wherein this substrate removes machine and is configured to apply molten
Agent is to remove remaining substrate on the substrate outside by fixed pattern.
32. 1 kinds of systems for manufacture, including:
Coating machine, it is configured to use substrate coated substrates, and this substrate contains the material to be patterned on substrate；And
Write machine, it is configured to guide and includes that the pulsed energy beam with the pulse of ramp type time domain waveform is shone with a flux
Penetrating on the point on coated substrate, this flux be enough to this material is fixed to this substrate and sinters this material at this point
Material.
33. systems according to claim 32, wherein in addition to the material of substrate to be fixed to, substrate also includes organic
Compound, and wherein select ramp type time domain waveform and flux, in order to it is being not resulted in the evaporation institute due to this organic compound
The degrading or caused before sintered material this organic compound to evaporate from substrate in the case of delamination of the material caused.
34. systems according to claim 32, wherein material includes nanoparticle, and wherein sintered material causes this to receive
Rice corpuscles melts at this point.
35. systems according to claim 32, wherein pulse has the persistent period of no more than 20ns.
36. according to the system according to any one of claim 32 to 35, and wherein this write machine is configured to guide arteries and veins
Punching is irradiated in and forms the pattern of material on substrate on the point sequence defining pattern on coated substrate.
37. systems according to claim 36, wherein the point in sequence is nonoverlapping.
38. systems according to claim 36, also include that substrate removes machine, its be configured to by pattern track it
On outer substrate, remaining substrate removes.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461977766P | 2014-04-10 | 2014-04-10 | |
| US61/977,766 | 2014-04-10 | ||
| PCT/IB2015/052476 WO2015155662A1 (en) | 2014-04-10 | 2015-04-05 | Pulsed-mode direct-write laser metallization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106133891A true CN106133891A (en) | 2016-11-16 |
| CN106133891B CN106133891B (en) | 2020-03-03 |
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| CN201580015581.9A Active CN106133891B (en) | 2014-04-10 | 2015-04-05 | Pulsed mode direct write laser metallization |
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| EP (1) | EP3140853A4 (en) |
| JP (1) | JP6635313B2 (en) |
| KR (1) | KR102345450B1 (en) |
| CN (1) | CN106133891B (en) |
| IL (1) | IL247946B (en) |
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| WO (1) | WO2015155662A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112088061A (en) * | 2018-05-08 | 2020-12-15 | 山高刀具公司 | Method for producing sintered body |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111703212B (en) | 2014-08-07 | 2022-11-18 | 奥宝科技有限公司 | LIFT printing system |
| US10193004B2 (en) | 2014-10-19 | 2019-01-29 | Orbotech Ltd. | LIFT printing of conductive traces onto a semiconductor substrate |
| US10633758B2 (en) | 2015-01-19 | 2020-04-28 | Orbotech Ltd. | Printing of three-dimensional metal structures with a sacrificial support |
| EP3322835A4 (en) | 2015-07-09 | 2019-02-27 | Orbotech Ltd. | Control of lift ejection angle |
| CN108349120B (en) | 2015-11-22 | 2020-06-23 | 奥博泰克有限公司 | Surface property control of printed three-dimensional structures |
| TW201901887A (en) | 2017-05-24 | 2019-01-01 | 以色列商奧寶科技股份有限公司 | Electrical interconnection circuit components on the substrate without prior patterning |
| KR102040530B1 (en) * | 2018-04-25 | 2019-11-05 | 성균관대학교산학협력단 | Method of forming redistribution layer using photo―sintering |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63209193A (en) * | 1987-02-25 | 1988-08-30 | 松下電器産業株式会社 | Method of forming conductor pattern |
| US20040191695A1 (en) * | 2003-03-27 | 2004-09-30 | Ray Kevin Barry | Nanopastes as patterning compositions for electronic parts |
| US20100035375A1 (en) * | 2003-07-16 | 2010-02-11 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
| CN102338983A (en) * | 2010-07-14 | 2012-02-01 | 韩国科学技术院 | Method of fabricating pattern |
| CN103081067A (en) * | 2010-04-02 | 2013-05-01 | 伊雷克托科学工业股份有限公司 | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290796A (en) * | 1985-06-19 | 1986-12-20 | 沖電気工業株式会社 | Manufacture of thick film hybrid integrated circuit board |
| JPH11307914A (en) * | 1998-04-21 | 1999-11-05 | Matsushita Electric Ind Co Ltd | Pattern forming method of thick film wiring board |
| US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
| JP2006038999A (en) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | Method for forming conductive circuit by using laser irradiation, and conductive circuit |
| TWI324423B (en) * | 2005-11-01 | 2010-05-01 | Cymer Inc | Laser system |
| US20070105395A1 (en) | 2005-11-04 | 2007-05-10 | Edward Kinzel | Laser functionalization and patterning of thick-film inks |
| US8404160B2 (en) | 2007-05-18 | 2013-03-26 | Applied Nanotech Holdings, Inc. | Metallic ink |
| US10231344B2 (en) | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
| US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| JP2009290112A (en) * | 2008-05-30 | 2009-12-10 | Fujifilm Corp | Conductive inorganic film, method for manufacturing thereof, wiring board, and semiconductor device |
| US8422197B2 (en) * | 2009-07-15 | 2013-04-16 | Applied Nanotech Holdings, Inc. | Applying optical energy to nanoparticles to produce a specified nanostructure |
| TW201339279A (en) * | 2011-11-24 | 2013-10-01 | Showa Denko Kk | Conductive-pattern formation method and composition for forming conductive pattern via light exposure or microwave heating |
-
2015
- 2015-04-05 CN CN201580015581.9A patent/CN106133891B/en active Active
- 2015-04-05 WO PCT/IB2015/052476 patent/WO2015155662A1/en active Application Filing
- 2015-04-05 JP JP2016552929A patent/JP6635313B2/en active Active
- 2015-04-05 KR KR1020167026671A patent/KR102345450B1/en active IP Right Grant
- 2015-04-05 EP EP15776752.6A patent/EP3140853A4/en active Pending
- 2015-04-05 IL IL247946A patent/IL247946B/en unknown
- 2015-04-09 TW TW104111474A patent/TWI661752B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63209193A (en) * | 1987-02-25 | 1988-08-30 | 松下電器産業株式会社 | Method of forming conductor pattern |
| US20040191695A1 (en) * | 2003-03-27 | 2004-09-30 | Ray Kevin Barry | Nanopastes as patterning compositions for electronic parts |
| US6921626B2 (en) * | 2003-03-27 | 2005-07-26 | Kodak Polychrome Graphics Llc | Nanopastes as patterning compositions for electronic parts |
| US20100035375A1 (en) * | 2003-07-16 | 2010-02-11 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
| CN103081067A (en) * | 2010-04-02 | 2013-05-01 | 伊雷克托科学工业股份有限公司 | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
| CN102338983A (en) * | 2010-07-14 | 2012-02-01 | 韩国科学技术院 | Method of fabricating pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112088061A (en) * | 2018-05-08 | 2020-12-15 | 山高刀具公司 | Method for producing sintered body |
| CN112088061B (en) * | 2018-05-08 | 2023-07-18 | 山高刀具公司 | Method for producing sintered body |
Also Published As
| Publication number | Publication date |
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| EP3140853A4 (en) | 2018-01-17 |
| EP3140853A1 (en) | 2017-03-15 |
| JP6635313B2 (en) | 2020-01-22 |
| IL247946B (en) | 2022-08-01 |
| IL247946A0 (en) | 2016-11-30 |
| CN106133891B (en) | 2020-03-03 |
| TWI661752B (en) | 2019-06-01 |
| KR102345450B1 (en) | 2021-12-29 |
| TW201543978A (en) | 2015-11-16 |
| KR20160144985A (en) | 2016-12-19 |
| WO2015155662A1 (en) | 2015-10-15 |
| JP2017513040A (en) | 2017-05-25 |
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