CN106124574A - Graphene oxide quantum dot humidity sensor and preparation method thereof - Google Patents
Graphene oxide quantum dot humidity sensor and preparation method thereof Download PDFInfo
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- CN106124574A CN106124574A CN201610443637.7A CN201610443637A CN106124574A CN 106124574 A CN106124574 A CN 106124574A CN 201610443637 A CN201610443637 A CN 201610443637A CN 106124574 A CN106124574 A CN 106124574A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
Abstract
The present invention provides a kind of graphene oxide quantum dot humidity sensor and preparation method thereof, and sensor includes: silicon chip, silicon dioxide layer, the first electrode and the second electrode, diallyl dimethyl ammoniumchloride thin film, graphene oxide quantum dot thin film；Preparation method comprises the following steps: (1) forms layer of silicon dioxide layer at silicon substrate surface, the first electrode and the second electrode is formed on silicon dioxide layer surface, obtain electrode base sheet, (2) between the first electrode and the second electrode and surface electrostatic adsorbs a strata diallyldimethylammonium chloride thin film, (3) at one layer of graphene oxide quantum dot thin film of diallyl dimethyl ammoniumchloride film surface Electrostatic Absorption, the humidity sensor of the present invention has the response speed being exceedingly fast, resistance to high humidity corrodes, and anti-electromagnetic interference capability is strong.
Description
Technical field
The present invention relates to sensor and manufacture field, be related specifically to one and there is super fast response, the erosion of resistance to high humidity, anti-electromagnetism
Graphene oxide quantum dot humidity sensor of feature of interference and preparation method thereof.
Background technology
Humidity sensor is often had by the fields such as unmanned plane meteorological detection, sounding balloon, gas drilling formation water output monitoring
Higher application requirement, the humidity sensor in these fields should have ultrafast response speed, has preferable resistance to height again
Wet erosion performance, also needs to have good electromagnetism interference characteristic simultaneously, and therefore developing high performance humidity sensor has ten
Divide important meaning.
2015, document Subsecond Response of Humidity Sensor Based on Graphene
Oxide Quantum Dots proposes a kind of impedance type humidity sensor based on graphene oxide quantum dot, this sensor
Electrode unit is plane interdigital structure, and graphene oxide quantum dot dispersion liquid is spin-coated on electrode zone, this humidity sensor
Using graphene oxide quantum dot as humidity sensitive material, graphene oxide quantum dot has the biggest specific surface area and rich
Rich hydrophilic group, this sensor can reach the response speed of submicrosecond level, but the thin film-forming method of spin coating causes humidity sensitive
The thickness of film is thicker and film is poor with the tack of substrate, and the response speed of the most this sensor is difficult to improve further, and
And easily by extraneous moisture attacks, affect sensor performance.
Summary of the invention
Present invention aims to the deficiencies in the prior art, it is provided that one has super fast response, the erosion of resistance to high humidity, resists
Electric resistance moisture sensor of the graphene oxide quantum dot of the feature that electromagnetic interference capability is strong and preparation method thereof.
For achieving the above object, technical solution of the present invention is as follows:
The preparation method of a kind of graphene oxide quantum dot humidity sensor, comprises the following steps:
(1) silicon chip is cleaned up, form layer of silicon dioxide layer at silicon substrate surface, then exist with Vacuum Coating method
Silicon dioxide layer surface is formed and is smaller than the first electrode equal to 20 microns and the second electrode, obtains electrode base sheet, and described the
One electrode and the second electrode are gold electrode；Set spacing as being the response speed in order to improve electrode less than or equal to 20 microns.
(2) electrode base sheet obtained in step (1) is immersed the polydiene propyl group two that concentration is 0.2～2.0 mg/ml
Ammonio methacrylate aqueous solution soaking 5～15 minutes, by electrostatic force between the first electrode and the second electrode and surface adsorption
One strata diallyldimethylammonium chloride thin film, is transferred in deionized water rinse 1～30 minute by this electrode base sheet, removes
Fall not to be securely attached between the first electrode and the second electrode and the diallyl dimethyl ammoniumchloride on surface, then should
Electrode base sheet after rinsing is placed in the protective gas of not higher than 50 DEG C standing and is dried process in 1～2 hour, thus obtains
Surface attachment has the electrode base sheet of a strata diallyldimethylammonium chloride thin film；
(3) surface attachment obtained in step (2) is had the electrode base of a strata diallyldimethylammonium chloride thin film
It is that 0.5～2.0 mg/ml and particle diameter soak less than or equal in the graphene oxide quantum dot dispersion liquid of 20 nanometers that sheet immerses concentration
Steep 5～15 minutes, adsorb one layer of graphene oxide quantum by electrostatic force at diallyl dimethyl ammoniumchloride film surface
Point thin film, this electrode base sheet is transferred to deionized water to be rinsed 1～30 minute, gets rid of and is the most firmly adsorbed onto polydiene propyl group two
The graphene oxide quantum dot of ammonio methacrylate film surface, the electrode base sheet after then this being rinsed is placed into not higher than 50 DEG C
Protective gas in stand and within 1～2 hour, be dried process, thus obtain surface adsorption and have one layer of graphene oxide quantum dot thin
The electrode base sheet of film；The particle diameter setting graphene oxide quantum dot is to think less than or equal to 20 nanometers: the least surface area of particle diameter is more
Greatly, so can adsorb more hydrone, thus improve the response speed of sensor.
(4) surface adsorption by obtaining in measuring process (3) has the electrode base of one layer of graphene oxide quantum dot thin film
Resistance variations between first electrode and second electrode of sheet measures humidity.
It is preferred that, the Vacuum Coating method in step (1) is evaporation or sputtering method.
It is preferred that, step (1) middle thermal oxidation method forms layer of silicon dioxide layer at silicon substrate surface.
It is preferred that, the protective gas in step (2) and step (3) is nitrogen.
The present invention also provides for a kind of graphene oxide quantum dot humidity sensor, including: on the silicon chip of bottom, silicon chip
Side silicon dioxide layer, first electrode on silicon dioxide layer surface and the second electrode, the first electrode and the second electrode between and on
The diallyl dimethyl ammoniumchloride thin film on surface, the graphene oxide of diallyl dimethyl ammoniumchloride thin film upper surface
Quantum dot film.
It is preferred that, in described electrode base sheet, electrode pattern is comb teeth-shaped and is staggered, the first the most adjacent electricity
It is provided with the second electrode between pole, between the second adjacent electrode, is provided with the first electrode.
It is preferred that, described humidity sensor uses any one described method above-mentioned to prepare.
The invention have the benefit that the humidity sensor that the present invention proposes uses graphene oxide quantum dot and polydiene
Diallyidimethylammonium chloride duplicature is as humidity sensitive medium, and particle diameter is less than or equal to the graphene oxide quantum dot tool of 20 nanometers
There are the biggest specific surface area and abundant hydrophilic functional groups；The polydiene propyl group removing absorption loosely is rinsed by deionized water
Alkyl dimethyl ammonium chloride and graphene oxide quantum dot, the thinnest available humidity sensitive film so that water molecule energy is with shorter
Time is bottom the diffusion of sensitive membrane upper surface arrives；Electrode spacing is less than or equal to simultaneously is 20 microns, so that between electrode
Sensitive membrane width less, beneficially electronics conduction.The above reason causes this humidity sensor to have the response speed being exceedingly fast
Degree.Secondly, diallyl dimethyl ammoniumchloride and graphene oxide quantum dot are adsorbed onto the first electrode by electrostatic force
And second between electrode and the surface, and rinsed by deionized water remove absorption diallyl dimethyl ammoniumchloride loosely with
Graphene oxide quantum dot, is not the most rinsed the diallyl dimethyl ammoniumchloride removed and graphite oxide by deionized water
Alkene quantum dot has the characteristic that tolerance high humidity corrodes.It addition, sensor is by measuring the electricity between the first electrode and the second electrode
Resistive measures humidity, relative to capacitance type humidity sensor, has stronger anti-electromagnetic interference capability.
Accompanying drawing explanation
Fig. 1 is the sectional view of the graphene oxide quantum dot humidity sensor of the present invention；
Fig. 2 is the electrode structure top view of the graphene oxide quantum dot humidity sensor of the present invention；
Fig. 3 is the top view of the graphene oxide quantum dot humidity sensor of the present invention；
Wherein, 1 is silicon chip, and 2 is silicon dioxide layer, and 3 is the first electrode, and 4 is the second electrode, and 5 is polydiene propyl group two
Ammonio methacrylate thin film, 6 is graphene oxide quantum dot thin film.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also be by the most different concrete realities
The mode of executing is carried out or applies, the every details in this specification can also based on different viewpoints and application, without departing from
Various modification or change is carried out under the spirit of the present invention.
The preparation method of a kind of graphene oxide quantum dot humidity sensor, comprises the following steps:
(1), silicon chip is cleaned up, form layer of silicon dioxide layer at silicon substrate surface thermal oxidation method, then use
Vacuum Coating method is formed on silicon dioxide layer surface and is smaller than the first electrode equal to 20 microns and the second electrode, obtains electrode
Substrate, described first electrode and the second electrode are gold electrode；Set spacing to be less than equal to 20 microns to improve electrode
Response speed.
(2), the electrode base sheet obtained in step (1) is immersed the polydiene propyl group that concentration is 0.2～2.0 mg/ml
Alkyl dimethyl ammonium chloride aqueous solution soaking 5～15 minutes, by electrostatic force, between the first electrode and the second electrode and surface is inhaled
An attached strata diallyldimethylammonium chloride thin film, is transferred in deionized water rinse 1～30 minute by this electrode base sheet, goes
Remove and be not securely attached between the first electrode and the second electrode and the diallyl dimethyl ammoniumchloride on surface, then will
Electrode base sheet after this rinses is placed in the nitrogen of not higher than 50 DEG C standing and is dried process in 1～2 hour, thus obtains table
Face is attached with the electrode base sheet of a strata diallyldimethylammonium chloride thin film；
(3), the surface attachment obtained in step (2) is had the electrode base of a strata diallyldimethylammonium chloride thin film
It is that 0.5～2.0 mg/ml and particle diameter soak less than or equal in the graphene oxide quantum dot dispersion liquid of 20 nanometers that sheet immerses concentration
Steep 5～15 minutes, adsorb one layer of graphene oxide quantum by electrostatic force at diallyl dimethyl ammoniumchloride film surface
Point thin film, this electrode base sheet is transferred to deionized water to be rinsed 1～30 minute, gets rid of and is the most firmly adsorbed onto polydiene propyl group two
The graphene oxide quantum dot of ammonio methacrylate film surface, the electrode base sheet after then this being rinsed is placed into not higher than 50 DEG C
Nitrogen in stand and within 1～2 hour, be dried process, thus obtain surface adsorption and have one layer of graphene oxide quantum dot thin film
Electrode base sheet；The particle diameter setting graphene oxide quantum dot is to think less than or equal to 20 nanometers: the least surface area of particle diameter is the biggest, this
Sample can adsorb more hydrone, thus improves the response speed of sensor.
(4), the surface adsorption by obtaining in measuring process (3) has the electrode base of one layer of graphene oxide quantum dot thin film
Resistance variations between first electrode and second electrode of sheet measures humidity.
Vacuum Coating method in step (1) is evaporation or sputtering method.
As shown in Figure 1, Figure 3, utilize a kind of graphene oxide quantum dot humidity sensor prepared by said method, including:
The silicon chip 1 of bottom, silicon dioxide layer 2, first electrode 3 on silicon dioxide layer 2 surface and the second electrode 4 above silicon chip 1,
Between first electrode 3 and the second electrode 4 and the diallyl dimethyl ammoniumchloride thin film 5 of upper surface, polydiene dimethylamine
The graphene oxide quantum dot thin film 6 of ammonium chloride thin film 5 upper surface.
As in figure 2 it is shown, electrode pattern is comb teeth-shaped and is staggered in described electrode base sheet, the first the most adjacent electrode it
Between be provided with the second electrode, be provided with the first electrode between the second adjacent electrode.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual and completed under technological thought without departing from disclosed spirit in all art
All equivalence modify or change, must be contained by the claim of the present invention.
Claims (7)
1. the preparation method of a graphene oxide quantum dot humidity sensor, it is characterised in that comprise the following steps:
(1) silicon chip is cleaned up, form layer of silicon dioxide layer at silicon substrate surface, then with Vacuum Coating method at dioxy
Change silicon surface formation and be smaller than the first electrode equal to 20 microns and the second electrode, obtain electrode base sheet, described first electricity
Pole and the second electrode are gold electrode；
(2) electrode base sheet obtained in step (1) is immersed the diallyl dimethyl that concentration is 0.2～2.0 mg/ml
Aqueous ammonium chloride solution soaks 5～15 minutes, by electrostatic force between the first electrode and the second electrode and surface adsorption one layer
Diallyl dimethyl ammoniumchloride thin film, is transferred in deionized water rinse 1～30 minute by this electrode base sheet, gets rid of not
It is securely attached between the first electrode and the second electrode and the diallyl dimethyl ammoniumchloride on surface, then this is rinsed
After electrode base sheet be placed in the protective gas of not higher than 50 DEG C standing and be dried process in 1～2 hour, thus obtain surface
It is attached with the electrode base sheet of a strata diallyldimethylammonium chloride thin film；
(3) electrode base sheet that the surface attachment obtained in step (2) has a strata diallyldimethylammonium chloride thin film soaks
Entering concentration is that 0.5～2.0 mg/ml and particle diameter are less than or equal to soaking 5 in the graphene oxide quantum dot dispersion liquid of 20 nanometers
～15 minutes, thin at diallyl dimethyl ammoniumchloride film surface one layer of graphene oxide quantum dot of absorption by electrostatic force
Film, is transferred to this electrode base sheet deionized water and rinses 1～30 minute, get rid of and be the most firmly adsorbed onto diallyl dimethyl
The graphene oxide quantum dot on ammonium chloride film surface, the electrode base sheet after then this being rinsed is placed into the guarantor of not higher than 50 DEG C
Protect gas stands and within 1～2 hour, be dried process, thus obtain surface adsorption and have one layer of graphene oxide quantum dot thin film
Electrode base sheet；
(4) surface adsorption by obtaining in measuring process (3) has the electrode base sheet of one layer of graphene oxide quantum dot thin film
Resistance variations between first electrode and the second electrode measures humidity.
The preparation method of graphene oxide quantum dot humidity sensor the most according to claim 1, it is characterised in that: step
(1) Vacuum Coating method in is evaporation or sputtering method.
The preparation method of graphene oxide quantum dot humidity sensor the most according to claim 1, it is characterised in that: step
(1) middle thermal oxidation method forms layer of silicon dioxide layer at silicon substrate surface.
The preparation method of graphene oxide quantum dot humidity sensor the most according to claim 1, it is characterised in that: step
(2) protective gas and in step (3) is nitrogen.
5. a graphene oxide quantum dot humidity sensor, it is characterised in that including: above the silicon chip of bottom, silicon chip
Silicon dioxide layer, first electrode on silicon dioxide layer surface and the second electrode, the first electrode and the second electrode between and upper table
The diallyl dimethyl ammoniumchloride thin film in face, the graphene oxide amount of diallyl dimethyl ammoniumchloride thin film upper surface
Son point thin film.
Graphene oxide quantum dot humidity sensor the most according to claim 5, it is characterised in that: in described electrode base sheet
Electrode pattern is comb teeth-shaped and is staggered, and is provided with the second electrode between the first the most adjacent electrode, the second adjacent electrode it
Between be provided with the first electrode.
Graphene oxide quantum dot humidity sensor the most according to claim 5, it is characterised in that: it uses claim
Method described in 1 to 4 any one prepares.
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| CN107064242A (en) * | 2017-04-11 | 2017-08-18 | 西南交通大学 | Molybdenum disulfide dopen Nano silver particles are combined humidity sensor and preparation method thereof |
| CN108896623A (en) * | 2018-07-11 | 2018-11-27 | 西南交通大学 | It is a kind of for measuring the numerical frequency formula humidity sensor of gas relative humidity |
| CN108982415A (en) * | 2018-08-14 | 2018-12-11 | 东北大学 | A kind of FPI cascade type optical fiber humidity sensor and preparation method based on GQDs-PVA filling |
| CN110208337A (en) * | 2019-06-28 | 2019-09-06 | 西南交通大学 | Compound humidity sensor of molybdenum disulfide/Nano diamond and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110494744A (en) * | 2017-03-31 | 2019-11-22 | 三美电机株式会社 | Humidity sensor |
| CN107064242A (en) * | 2017-04-11 | 2017-08-18 | 西南交通大学 | Molybdenum disulfide dopen Nano silver particles are combined humidity sensor and preparation method thereof |
| CN107064242B (en) * | 2017-04-11 | 2020-01-17 | 西南交通大学 | Molybdenum disulfide doped nano silver particle composite humidity sensor and preparation method thereof |
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| CN108896623B (en) * | 2018-07-11 | 2020-01-31 | 西南交通大学 | digital frequency type humidity sensor for measuring relative humidity of gas |
| CN108982415A (en) * | 2018-08-14 | 2018-12-11 | 东北大学 | A kind of FPI cascade type optical fiber humidity sensor and preparation method based on GQDs-PVA filling |
| CN108982415B (en) * | 2018-08-14 | 2020-03-24 | 东北大学 | GQDs-PVA filling-based FPI cascaded optical fiber humidity sensor and preparation method thereof |
| CN110208337A (en) * | 2019-06-28 | 2019-09-06 | 西南交通大学 | Compound humidity sensor of molybdenum disulfide/Nano diamond and preparation method thereof |
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