CN106098895A - 发光二极管模组及使用该发光二极管模组的灯具 - Google Patents
发光二极管模组及使用该发光二极管模组的灯具 Download PDFInfo
- Publication number
- CN106098895A CN106098895A CN201510341193.1A CN201510341193A CN106098895A CN 106098895 A CN106098895 A CN 106098895A CN 201510341193 A CN201510341193 A CN 201510341193A CN 106098895 A CN106098895 A CN 106098895A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- emitting diode
- light
- exiting surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- 230000004308 accommodation Effects 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
- F21Y2105/14—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array
- F21Y2105/16—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
本发明实施例公开了一种发光二极管模组及使用该发光二极管模组的灯具。发光二极管模组包括基板及多个发光封装体,每一发光封装体包含发光二极管及光波长转换层,其中发光二极管具有第一出光面、接合面以及多个第二出光面,接合面相对于第一出光面并连接基板,第二出光面介于第一出光面及接合面之间,光波长转换层覆盖发光二极管的第一出光面与第二出光面,发光二极管的接合面至第一出光面上的光波长转换层的顶面之间的距离代表一光源总厚度,相邻的发光封装体之间的距离代表一光源间距,其中光源间距与光源总厚度的比值介于1至6.3之间。本发明实施例的技术方案能解决发光二极管模组出光无法集中的问题,能提高发光二极管模组的光学效果。
Description
技术领域
本发明是关于一种照明技术;特别是有关于一种发光二极管模组及使用该发光二极管模组的灯具。
背景技术
发光二极管(Light-Emitting Diode,LED)因具有寿命长、发光效率高、体积小、污染低等优点,故近来被广泛应用在照明用途上。
一种公知的LED照明模组,主要包括基板、多个LED、荧光粉层及不透光结构,其中LED以打线接合(wire bonding)方式連接基板,荧光粉层覆盖于所述多个LED上,且不透光结构围绕于所述多个LED设置,以定义且限制荧光粉层的涂布位置。然而,在此LED照明模组中,所述多个LED的分布范围通常较大,以致出光无法集中,另外不透光结构也会造成出光角度受到限制。因此,在使用此种公知的LED照明模组的灯具时,必须搭配多种不同规格的透镜,以达到所需的光学效果。
另一种公知的LED照明模组,主要包括基板以及固定于基板上的多个LED封装体,其中每一LED封装体包括塑胶外壳、LED及荧光粉层,LED设置于塑胶外壳中,且荧光粉层覆盖于LED上。然而,此LED照明模组往往因为所述多个LED封装体的高热阻而造成其光学表现受到影响。另外,在使用此种公知的LED照明模组的灯具时,每一LED封装体均需独立搭配一透镜,如此也造成制造成本增加,并且透过多组透镜所产生的光学品味不佳,易有残影问题。
因此,如何提供一种可改善上述缺点的发光二极管(照明)模组及使用该发光二极管模组的灯具,实为本领域技术人员的一重要课题。
发明内容
本发明一实施例中提供一种发光二极管模组,包括:一基板;以及多个发光封装体,每一发光封装体包含一发光二极管及一光波长转换层,其中发光二极管具有一第一出光面、一接合面以及多个第二出光面,接合面相对于第一出光面,并透过一覆晶封装方式连接基板,所述多个第二出光面介于第一出光面及接合面之间,并大致垂直于第一出光面及接合面,光波长转换层设置于发光二极管上,并覆盖发光二极管的第一出光面与所述多个第二出光面,发光二极管的接合面至第一出光面上的光波长转换层的一顶面之间的距离代表一光源总厚度,相邻的所述多个发光封装体之间的距离代表一光源间距,其中该光源间距与该光源总厚度的比值介于1至6.3之间。
于一实施例中,前述光源间距与光源总厚度的比值介于2至3之间。
于一实施例中,前述发光二极管的接合面设有多个电极,前述基板上设有多个对应于所述多个电极的接合垫,用以电性连接发光二极管与基板。
于一实施例中,前述发光二极管的其中一电极的一第一面积与前述基板上的一对应的接合垫的一第二面积的比值介于0.5至2之间。
于一实施例中,前述基板上的其中一接合垫相对于前述发光二极管的一对应电极于一水平方向上的偏移距离小于50微米。
于一实施例中,前述第一出光面上的光波长转换层具有一第一厚度,前述第二出光面上的光波长转换层具有一第二厚度,其中第一厚度与第二厚度的比值介于1至1.33之间。
于一实施例中,前述发光二极管模组还包括一导光材料层,设置于前述所述多个发光封装体之间。
于一实施例中,前述导光材料层的折射率小于前述所述多个光波长转换层的折射率。
于一实施例中,前述导光材料层具有一第二顶面以及一底面,底面相对于第二顶面并连接前述基板,第二顶面为一平面、外凸弧面、内凹弧面或锯齿面。
本发明另一实施例中也提供一种灯具,包括:一基座;一灯罩,连接该基座,并形成有一容置空间;以及一发光二极管模组,设置于该容置空间内,其中发光二极管模组包括:一基板;以及多个发光封装体,每一发光封装体包含一发光二极管及一光波长转换层,其中发光二极管具有一第一出光面、一接合面以及多个第二出光面,接合面相对于第一出光面,并透过一覆晶封装方式连接基板,所述多个第二出光面介于第一出光面及接合面之间,并大致垂直于第一出光面及接合面,光波长转换层设置于发光二极管上,并覆盖发光二极管的第一出光面与所述多个第二出光面,发光二极管的接合面至第一出光面上的光波长转换层的一顶面之间的距离代表一光源总厚度,相邻的所述多个发光封装体之间的距离代表一光源间距,其中该光源间距与该光源总厚度的比值介于1至6.3之间。
为让本发明的上述和其它目的、特征、和优点能更明显易懂,下文特举出较佳实施例,并配合所附附图,作详细说明如下。
附图说明
图1表示本发明一实施例中的发光二极管模组的上视示意图;
图2表示沿图1中A-A’方向的剖视示意图;
图3表示图2中的发光封装体与基板的接合部分的放大示意图;
图4表示图3中的发光二极管的电极与基板上的接合垫的布置关是示意图;
图5表示本发明一实施例中的灯罩的剖视示意图。
其中,附图标记说明如下:
10~发光二极管模组;
20~基座;
30~灯罩;
100~基板;
102~发光封装体;
104~发光二极管;
104A~第一出光面;
104B~接合面;
104C~第二出光面;
106~光波长转换层;
106A~顶面;
108~导光材料层;
108A~顶面/第二顶面;
108B~底面;
A1~第一面积;
A2~第二面积;
B~接合垫;
D~光源间距;
E~电极;
S~容置空间;
T~光源总厚度;
T1~第一厚度;
T2~第二厚度。
具体实施方式
现配合附图说明本发明的较佳实施例。
在以下所说明的本发明的各种实施例中,所称的方位“上”、“下”,仅是用来表示相对的位置关系,并非用来限制本发明。当述及一第一元件位于一元件上时,包括第一元件与第二元件直接接触或间隔有一或更多其他元件的情形。
在附图或说明书描述中,相似或相同的部分皆使用相同的符号。在附图中,实施例的形状或厚度可扩大,以简化或是方便标示。此外,在附图或说明书描述中未示出或描述的元件,为所属技术领域中具有通常知识者所知的形式。
请一并参阅图1、图2及图3,其中图1表示本发明一实施例中的发光二极管模组的上视示意图,图2表示沿图1中A-A’方向的剖视示意图,图3表示图2中的发光封装体与基板的接合部分的放大示意图。在第1至3图中,本实施例的发光二极管(LED)模组10包括一基板100、多个发光封装体102以及一导光材料层108。
前述基板100是为一电路板,其上设置有多条线路(图未示),用以电性连接前述发光封装体102,并提供所述多个发光封装体102发光所需的电能。发光封装体102设置于基板100上,且每一发光封装体102包括一发光二极管(LED)104及一设置于发光二极管104上的光波长转换层106。于本实施例中,发光封装体102用以发射白光,其中发光二极管104可为一蓝色LED,光波长转换层106可为一黄色荧光粉层,但并不以此为限。此外,前述导光材料层108设置于相邻的发光封装体102之间,具有导光效果,并可避免发光封装体102之间相互吸光。导光材料层108的导光原理及其他特征、优点会在后面段落再做说明。
应能了解的是,虽然在图1中包括四个以矩阵方式排列的发光封装体102,但于本发明的其他实施例中也可包括两个、三个或更多个发光封装体102,以矩阵方式或者其他可选用的方式排列。
请继续参阅图1、图2及图3,本实施例的所述多个发光二极管104均为六面体结构,但并不以此为限。其中,每一发光二极管104具有一第一出光面104A、一相对于第一出光面104A的接合面104B、以及四个介于第一出光面104A与接合面104B之间的第二出光面104C。在图2中,所述多个第二出光面104C大致垂直于第一出光面104A及接合面104B。另外,光波长转换层106可覆盖第一出光面104A及四个第二出光面104C,以使得所述多个发光封装体102具有五个出光面(接合面104B除外)。
于本实施例中,每一光波长转换层106可以真空成膜技术(vacuummould membrane technology)单独地形成于每一发光二极管104上,故相较于公知技术中以点胶方式将荧光粉层涂布于多个发光二极管上,更可准确地掌控荧光粉层的厚度及均匀性,进而改善发光效率。如图3所示,位于第一出光面104A上的光波长转换层106具有一第一厚度T1,而位于所述多个第二出光面104C上的光波长转换层106具有一第二厚度T2,其中第一厚度T1与第二厚度T2的比值介于1至1.33之间,以使得本实施例的发光封装体102可具有较佳的发光效率及色彩均匀性。此外,本实施例的发光二极管模组10可省去公知技术的不透光结构,以避免其出光角度范围受限。
如图3所示,前述发光二极管104的接合面104B上设有多个电极E,而基板100上设有多个对应的接合垫B,其中所述多个电极E与接合垫B可透过金属共晶接合(Metal Eutectic Bonding)的方式连接,但并不以此为限,以使得发光二极管104与基板100电性连接。于本实施例中,发光二极管104透过覆晶封装方式(flip-chip packaging)连接基板100,如此可大幅降低封装热阻,并进而改善整体发光二极管模组10的发光效率。
请参阅图4,其表示图3中的发光二极管104的电极E与基板100上的接合垫B的布置关是示意图。于本实施例中,发光二极管104的接合面104B上的电极E具有一第一面积A1(本实施例中的多个电极E具有相同的面积,但并不以此为限),而基板100上对应的接合垫B(在图4中以虚线表示的)具有一第二面积A2,其中第一面积A1与第二面积A2的比值介于0.5至2之间,以使得发光封装体102与基板100之间具有较佳的接合强度,及发光封装体102具有较佳的光学表现。
具体而言,若第一面积A1与第二面积A2的比值大于2时,发光封装体102与基板100之间的接合强度可能不足;若第一面积A1与第二面积A2的比值小于0.5时,发光封装体102所发出的光线则可能被接合垫B所吸收,并使其发光效率受到影响。此外,于一较佳的实施例中,第一面积A1与第二面积A2的比值是为1,且接合垫B相对于对应的电极E于一水平方向(如图4中的箭头方向所示)上的偏移距离小于50微米。
需特别说明的是,相较于公知打线封装或使用塑胶外壳的封装方式,本实施例中的发光封装体102的分布范围/面积可通过覆晶封装方式而被有效地缩减,进而有利于弹性地调整所述多个发光封装体102的间距,以达到所需的光学效果。举例而言,如图1及图2所示,相邻的发光封装体102之间的距离(即,相邻的光波长转换层106之间的距离)代表一光源间距D(每一发光封装体102视为一点光源),而发光封装体102中的发光二极管104的接合面104B至第一出光面104A上的光波长转换层106的顶面106A之间的距离代表一光源总厚度T,其中本实施例的光源间距D(大约0.35至2.2毫米)与光源总厚度T(大约0.35毫米)的比值介于1至6.3之间,以使得发光二极管模组10可满足不同(照明)出光角度的需求。
本发明另一实施例中也提供一种使用前述发光二极管模组10的灯具。请参阅图5,本实施例的灯具主要包括一前述发光二极管模组10、一基座20以及一灯罩30,其中基座20与灯罩30可以卡合或锁合的方式(图未示)结合,并在两者之间形成有一容置空间S,而发光二极管模组10设置于容置空间S内,并可由基座20所支撑。值得一提的是,由于本发明重点不在于基座20与灯罩30的设计,故在此不再赘述其结构及选用材料等内容。
本实施例的灯具的特点在于:当发光二极管模组10的光源间距D与光源总厚度T的比值越小(趋近1)时,发光封装体102之间会互相吸光,而使得整体光通量(luminous flux)减少,但中心光强(center beamcandlepower,CBCP)则会增加;反之,当发光二极管模组10的光源间距D与光源总厚度T的比值越大(趋近6.3)时,整体光通量会增加,但中心光强则会减少,因而可利用点光源(发光封装体102)的不同间距设计,并仅搭配单一个灯罩30而满足不同照明或灯具规格的需求。于一较佳的实施例中,发光二极管模组10的光源间距D与光源总厚度T的比值介于2至3之间,此时可同时兼顾光通量与中心光强的光学表现。
需特别说明的是,通过上述设计,本实施例中的灯具的灯罩的共用性可被提升,如此得有效地降低制造成本,同时由于发光二极管模组10中的多个发光封装体102所发出的光线通过单一个灯罩30射出,也不会产生光学品味方面的问题。
请再回到图1及图2,本实施例的发光封装体102之间更可设有一透明导光材料层108,其中导光材料层108的折射率是小于发光封装体102的光波长转换层106的折射率,并大于环境(例如容置空间S内的空气)的折射率。藉此折射率递减的布置,导光材料层108可有助于将发光封装体102所发出的光线导引向上并经由灯罩30射出,进而减少发光封装体102之间相互吸光的机会。因此,可改善整体灯具的发光效率,及当所述多个发光封装体102之间距较大时所发生的中心暗区的现象(改善出光均匀度)。
虽然在图2中的导光材料层108的顶面108A(第二顶面)为一平面,但其也可能为一外凸弧面、内凹弧面或锯齿面,此可根据实际需求来设计。在图2中,导光材料层108的与顶面108A相对的底面108B连接于基板100。
虽然本发明以前述数个较佳实施例公开如上,然其并非用以限定本发明。本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可做些许的更动与润饰。因此本发明的保护范围当视后附的申请专利范围所界定者为准。此外,每个申请专利范围建构成一独立的实施例,且各种申请专利范围及实施例的组合皆介于本发明的范围内。
Claims (10)
1.一种发光二极管模组,包括:
一基板;以及
多个发光封装体,每一该发光封装体包含一发光二极管及一光波长转换层,其中该发光二极管具有一第一出光面、一接合面以及多个第二出光面,该接合面相对于该第一出光面,并透过一覆晶封装方式连接该基板,所述多个第二出光面介于该第一出光面及该接合面之间,并大致垂直于该第一出光面及该接合面,该光波长转换层设置于该发光二极管上,并覆盖该发光二极管的该第一出光面与所述多个第二出光面,该发光二极管的该接合面至该第一出光面上的该光波长转换层的一顶面之间的距离代表一光源总厚度,相邻的所述多个发光封装体之间的距离代表一光源间距,其中该光源间距与该光源总厚度的比值介于1至6.3之间。
2.如权利要求1项所述的发光二极管模组,其特征在于,该光源间距与该光源总厚度的比值介于2至3之间。
3.如权利要求1项所述的发光二极管模组,其特征在于,该发光二极管的该接合面设有多个电极,该基板上设有多个对应于所述多个电极的接合垫,用以电性连接该发光二极管与该基板。
4.如权利要求3项所述的发光二极管模组,其特征在于,该发光二极管的其中一电极的一第一面积与该基板上的一对应的接合垫的一第二面积的比值介于0.5至2之间。
5.如权利要求3项所述的发光二极管模组,其特征在于,该基板上的其中一接合垫相对于该发光二极管的一对应电极于一水平方向上的偏移距离小于50微米。
6.如权利要求1项所述的发光二极管模组,其特征在于,该第一出光面上的该光波长转换层具有一第一厚度,所述多个第二出光面上的该光波长转换层具有一第二厚度,其中该第一厚度与该第二厚度的比值介于1至1.33之间。
7.如权利要求1项所述的发光二极管模组,其特征在于,该发光二极管模组还包括一导光材料层,该导光材料层设置于所述多个发光封装体之间。
8.如权利要求7项所述的发光二极管模组,其特征在于,该导光材料层的折射率小于所述多个光波长转换层的折射率。
9.如权利要求7项所述的发光二极管模组,其特征在于,该导光材料层具有一第二顶面以及一底面,该底面相对于该第二顶面并连接该基板,该第二顶面为一平面、外凸弧面、内凹弧面或锯齿面。
10.一种灯具,包括:
一基座;
一灯罩,连接该基座,并形成有一容置空间;以及
一发光二极管模组,设置于该容置空间内,包括:
一基板;以及
多个发光封装体,其中每一该发光封装体包含一发光二极管及一波长转换层,该发光二极管具有一第一出光面、一接合面以及多个第二出光面,该接合面相对于该第一出光面,并透过一覆晶封装方式连接该基板,所述多个第二出光面介于该第一出光面及该接合面之间,并大致垂直于该第一出光面及该接合面,该光波长转换层设置于该发光二极管上,并覆盖该发光二极管的该第一出光面与所述多个第二出光面,该发光二极管的该接合面至该第一出光面上的该光波长转换层的一顶面之间的距离代表一光源总厚度,相邻的所述多个发光封装体之间的距离代表一光源间距,其中该光源间距与该光源总厚度的比值介于1至6.3之间。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104113645 | 2015-04-29 | ||
TW104113645A TWI565102B (zh) | 2015-04-29 | 2015-04-29 | 發光二極體模組及使用該發光二極體模組的燈具 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106098895A true CN106098895A (zh) | 2016-11-09 |
Family
ID=55854673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510341193.1A Pending CN106098895A (zh) | 2015-04-29 | 2015-06-18 | 发光二极管模组及使用该发光二极管模组的灯具 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9966413B2 (zh) |
EP (1) | EP3089226A1 (zh) |
JP (1) | JP2016213453A (zh) |
CN (1) | CN106098895A (zh) |
TW (1) | TWI565102B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109669297A (zh) * | 2018-12-07 | 2019-04-23 | 业成科技(成都)有限公司 | 显示装置及其制造方法 |
CN110314857A (zh) * | 2019-05-08 | 2019-10-11 | 合肥泰禾光电科技股份有限公司 | 色选灯及色选机 |
CN111344518A (zh) * | 2017-11-13 | 2020-06-26 | 电化株式会社 | 具有led照明用安装基板的照明装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715188A (zh) * | 2012-09-28 | 2014-04-09 | 台积固态照明股份有限公司 | 具有改进的白色外观的led发射器 |
TW201427085A (zh) * | 2012-12-18 | 2014-07-01 | 玉晶光電股份有限公司 | 發光裝置 |
EP2760047A2 (en) * | 2013-01-28 | 2014-07-30 | Panasonic Corporation | Light emitting module, lighting apparatus, and lighting fixture |
CN104279528A (zh) * | 2013-07-02 | 2015-01-14 | Lg伊诺特有限公司 | 照明装置及具有该照明装置的平板显示器 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI254997B (en) | 2004-09-10 | 2006-05-11 | Aiptek Int Inc | Process of manufacturing flip-chips and the apparatus thereof |
JP5008262B2 (ja) * | 2005-03-02 | 2012-08-22 | 日亜化学工業株式会社 | 半導体発光素子 |
KR100665222B1 (ko) * | 2005-07-26 | 2007-01-09 | 삼성전기주식회사 | 확산재료를 이용한 엘이디 패키지 및 그 제조 방법 |
JP5141077B2 (ja) | 2007-04-03 | 2013-02-13 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
TWI401820B (zh) | 2007-11-07 | 2013-07-11 | Ind Tech Res Inst | 發光元件及其製作方法 |
TWI434432B (zh) * | 2008-07-03 | 2014-04-11 | Samsung Electronics Co Ltd | Led封裝件及具有其之背光單元 |
KR101332794B1 (ko) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
DE102009036621B4 (de) * | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
US20110049545A1 (en) * | 2009-09-02 | 2011-03-03 | Koninklijke Philips Electronics N.V. | Led package with phosphor plate and reflective substrate |
TWM422645U (en) * | 2011-09-07 | 2012-02-11 | Lextar Electronics Corp | Light emitting semiconductor lamp and heat dissipation device thereof |
JP5450680B2 (ja) | 2012-02-01 | 2014-03-26 | スタンレー電気株式会社 | 半導体発光装置 |
JP2013183020A (ja) | 2012-03-01 | 2013-09-12 | Toshiba Corp | 半導体発光装置およびその製造方法 |
CN103367611B (zh) * | 2012-03-28 | 2017-08-08 | 日亚化学工业株式会社 | 波长变换用无机成型体及其制造方法以及发光装置 |
US9093618B2 (en) | 2012-08-24 | 2015-07-28 | Tsmc Solid State Lighting Ltd. | Method and apparatus for fabricating phosphor-coated LED dies |
JP2013033976A (ja) * | 2012-09-14 | 2013-02-14 | Stanley Electric Co Ltd | 半導体発光装置、および車両用前照灯 |
KR102237304B1 (ko) * | 2013-05-15 | 2021-04-07 | 루미리즈 홀딩 비.브이. | 반사기 및 광학 요소를 갖는 발광 디바이스 |
JP5620562B1 (ja) * | 2013-10-23 | 2014-11-05 | 株式会社光波 | 単結晶蛍光体及び発光装置 |
JP6209949B2 (ja) * | 2013-11-13 | 2017-10-11 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
WO2015091191A1 (en) * | 2013-12-17 | 2015-06-25 | Koninklijke Philips N.V. | A solid state light emitter package, a light emission device, a flexible led strip and a luminaire |
TWI552386B (zh) * | 2013-12-20 | 2016-10-01 | 新世紀光電股份有限公司 | 半導體發光結構及半導體封裝結構 |
KR20160023011A (ko) * | 2014-08-20 | 2016-03-03 | 삼성전자주식회사 | 발광소자 패키지 |
US10431568B2 (en) * | 2014-12-18 | 2019-10-01 | Cree, Inc. | Light emitting diodes, components and related methods |
US10510934B2 (en) * | 2015-11-30 | 2019-12-17 | Nichia Corporation | Light emitting device |
-
2015
- 2015-04-29 TW TW104113645A patent/TWI565102B/zh active
- 2015-06-18 CN CN201510341193.1A patent/CN106098895A/zh active Pending
-
2016
- 2016-04-01 US US15/088,616 patent/US9966413B2/en active Active
- 2016-04-27 EP EP16167209.2A patent/EP3089226A1/en not_active Withdrawn
- 2016-04-27 JP JP2016089919A patent/JP2016213453A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715188A (zh) * | 2012-09-28 | 2014-04-09 | 台积固态照明股份有限公司 | 具有改进的白色外观的led发射器 |
TW201427085A (zh) * | 2012-12-18 | 2014-07-01 | 玉晶光電股份有限公司 | 發光裝置 |
EP2760047A2 (en) * | 2013-01-28 | 2014-07-30 | Panasonic Corporation | Light emitting module, lighting apparatus, and lighting fixture |
CN104279528A (zh) * | 2013-07-02 | 2015-01-14 | Lg伊诺特有限公司 | 照明装置及具有该照明装置的平板显示器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111344518A (zh) * | 2017-11-13 | 2020-06-26 | 电化株式会社 | 具有led照明用安装基板的照明装置 |
CN109669297A (zh) * | 2018-12-07 | 2019-04-23 | 业成科技(成都)有限公司 | 显示装置及其制造方法 |
CN110314857A (zh) * | 2019-05-08 | 2019-10-11 | 合肥泰禾光电科技股份有限公司 | 色选灯及色选机 |
Also Published As
Publication number | Publication date |
---|---|
US20160322420A1 (en) | 2016-11-03 |
TW201639194A (zh) | 2016-11-01 |
JP2016213453A (ja) | 2016-12-15 |
US9966413B2 (en) | 2018-05-08 |
TWI565102B (zh) | 2017-01-01 |
EP3089226A1 (en) | 2016-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5058237B2 (ja) | Led照明モジュール及びそのパッケージ方法 | |
EP2445007B1 (en) | Multichip package structure using a constant voltage power supply | |
CN203277380U (zh) | 发光组件及其发光装置 | |
CN101410994B (zh) | 发光装置 | |
JP2003092010A (ja) | 照明装置 | |
TW200941767A (en) | Light emitting device and manufacturing method thereof | |
CN104006327A (zh) | 发光二极管背光模块 | |
CN101788110A (zh) | 发光二极管照明模块与封装方法 | |
CN201348169Y (zh) | 基于cob技术封装的白光led集成阵列照明光源 | |
TW201250170A (en) | Light emitting diode light bulbs and light emitting diode assemblies thereof | |
CN106098895A (zh) | 发光二极管模组及使用该发光二极管模组的灯具 | |
CN201966209U (zh) | 混光式多晶封装结构 | |
CN102364684B (zh) | 一种led模组及其制造工艺 | |
CN106960840A (zh) | 一种可调色温的led光源 | |
CN116885081A (zh) | 一种二极管封装结构 | |
CN201428943Y (zh) | Led灯 | |
CN203690296U (zh) | 一种大功率rgbw交叉混色cob集成封装结构 | |
TW201426966A (zh) | 發光二極體燈條 | |
CN216872009U (zh) | 一种可提高芯片出光效率的圆形大功率led封装结构 | |
CN102280555A (zh) | 一种发光二极管及其制造方法 | |
JP2015164216A (ja) | Led発光装置 | |
CN2717026Y (zh) | 多芯片封装结构发光二极管 | |
CN209876608U (zh) | 一种led光源组件及背光组件 | |
CN201838595U (zh) | 可调整亮度及分区点亮光源的混光式发光二极管封装结构 | |
CN203010228U (zh) | 发光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161109 |
|
WD01 | Invention patent application deemed withdrawn after publication |