CN106098881A - The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate and preparation method - Google Patents
The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate and preparation method Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 239000002223 garnet Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The invention discloses the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, including yttrium-aluminium-garnet substrate, GaN cushion and InGaN/GaN SQW, described yttrium-aluminium-garnet substrate grows described GaN cushion and described InGaN/GaN SQW successively.InGaN/GaN MQW defect concentration is low, crystalline quality good, good luminescence property for this.The preparation method of the InGaN/GaN MQW being grown in described in the invention also discloses on yttrium-aluminium-garnet substrate, this preparation method technique is simple, and preparation cost is cheap.
Description
Technical field
The present invention relates to InGaN/GaN MQW technical field, particularly relate to be grown on yttrium-aluminium-garnet substrate
InGaN/GaN MQW and preparation method.
Background technology
Light emitting diode (LED) is as a kind of New Solid lighting source, low with its caloric value, power consumption is few, reaction is fast
The advantages such as degree is fast, life-span length, volume are little are it is considered to be the green illumination light source of 21 century.Face the future the city of high-power illumination
Field demand, LED really to realize extensive extensively application, and its luminous efficiency remains a need for improving further.At present, LED chip master
If by growing on a sapphire substrate prepared by GaN material system.But, owing to the lattice between sapphire and GaN loses
Join up to 13.3%, create during causing extension GaN film density for～109cm-2Dislocation defects, thus reduce material
The carrier mobility of material, shortens carrier lifetime, and then have impact on the performance of GaN base device.Secondly as it is sapphire
Thermal conductivity low (being 25W/m K when 100 DEG C), is difficult to discharge the heat produced in chip in time, causes thermal accumlation, make device
The internal quantum efficiency of part reduces, and finally affects the performance of device.
It is known that prepare the GaN base LED of high-effect high-quality, it is with high-quality InGaN/GaN MQW
Based on, therefore, find a kind of backing material good with GaN material Lattice Matching and heat conductivity, for InGaN/GaN
The preparation of MQW seems particularly significant.
Summary of the invention
In order to overcome the deficiencies in the prior art, first purpose of the present invention is to provide one to be grown in yttrium-aluminium-garnet
InGaN/GaN MQW on substrate, InGaN/GaN MQW defect concentration is low, crystalline quality good for this, and luminescent properties is excellent
Good.
Second object of the present invention is the InGaN/GaN Multiple-quantum being grown on yttrium-aluminium-garnet substrate described in offer
The preparation method of trap, this preparation method technique is simple, and preparation cost is cheap.
First purpose of the present invention realizes by the following technical solutions:
The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, including yttrium-aluminium-garnet substrate, GaN buffering
Layer and InGaN/GaN SQW, described yttrium-aluminium-garnet substrate grows described GaN cushion and described InGaN/GaN successively
SQW.
Preferably, described yttrium-aluminium-garnet substrate with (111) face inclined 0.5-1 ° of (100) face as epitaxial surface, described yttroalumite
The epitaxial orientation relation of garnet substrate and described GaN cushion is: (0001) face of GaN cushion is parallel to yttrium-aluminium-garnet lining
(111) face at the end.Wherein, yttrium-aluminium-garnet is also called Y3Al5O12, i.e. GaN (0001) //Y3Al5O12(111)。
Preferably, the thickness of described GaN cushion is 50-200nm；In described InGaN/GaN SQW, InGaN well layer
The thickness that thickness is 2-3nm, GaN barrier layer be 10-15nm, periodicity is 7-12.
Second object of the present invention realizes by the following technical solutions:
The preparation method of a kind of InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, comprises the following steps:
1) using yttrium-aluminium-garnet substrate, inclined 0.5-1 ° of (100) face, (111) face with yttrium-aluminium-garnet substrate is as extension
Face, epitaxial growth GaN cushion；Wherein, the epitaxial orientation relation of yttrium-aluminium-garnet substrate and GaN cushion is: GaN cushion
(0001) face be parallel to (111) face of yttrium-aluminium-garnet substrate；
2) at GaN cushion Epitaxial growth InGaN/GaN SQW.
Preferably, before epitaxial growth GaN cushion, yttrium-aluminium-garnet substrate is carried out flash annealing process, specifically grasps
Make as follows: yttrium-aluminium-garnet substrate is put into reative cell, at 800-900 DEG C, nitrogen atmosphere carries out in-situ annealing process
1-2h。
Preferably, the process conditions of epitaxial growth GaN cushion are: use laser assisted molecular beam epitaxial growth technique,
Yttrium-aluminium-garnet substrate temperature is maintained at 400-500 DEG C, and the pressure controlling reative cell is 4.0-6.0 × 10-3Torr, laser
Energy is 220-300mJ, laser frequency is 10-30Hz, the speed of growth is 60-80nm/h.
Preferably, the process conditions of epitaxial growth InGaN/GaN SQW are: use molecular beam epitaxial growth technique, will
Yttrium-aluminium-garnet substrate temperature is maintained at 750-850 DEG C, and the pressure controlling reative cell is 4.0-5.0 × 10-5Torr、Ⅴ/Ⅲ
Value is 40-50, the speed of growth is 60-80nm/h.
Preferably, the thickness of described GaN cushion is 50-200nm；In described InGaN/GaN SQW, InGaN well layer
The thickness that thickness is 2-3nm, GaN barrier layer be 10-15nm, periodicity is 7-12.
Compared to existing technology, the beneficial effects of the present invention is:
(1) the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention, uses and GaN
The low yttrium-aluminium-garnet of lattice mismatch is as substrate, it is possible to effectively reducing the formation of dislocation, half-peak breadth numerical value is little, dislocation density
Low, the InGaN/GaN film quality prepared is high, the carrier radiation recombination effect of the GaN base photoelectric material device prepared
Rate is high, can increase substantially nitride device such as semiconductor laser, light emitting diode and the efficiency of solaode.
(2) the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention, yttrium-aluminium-garnet
Inclined 0.5-1 ° of (100) face is as epitaxial surface with (111) face for substrate, and it with the epitaxial orientation relation of GaN cushion is: GaN's
(0001) face is parallel to Y3Al5O12(111) face, i.e. GaN (0001) //Y3Al5O12(111)。Y3Al5O12(111) have and GaN
(0001) six identical side's symmetry, the Y of Emission in Cubic3Al5O12(111) lattice parameter isThus six sides
The Y of phase3Al5O12(111) lattice parameterIt is in close proximity to GaN (111) lattice parameter's
Twice, both lattice mismatches are little, it is ensured that Y3Al5O12Lattice Matching between substrate and GaN cushion, outside contributing to
Epitaxial growth high-quality GaN thin film and InGaN/GaN SQW.
(3) the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention, GaN cushion
Thickness be that the GaN cushion that 50-200nm, 50-200nm are thick can provide the center of forming core and discharge membrane stress, for connecing down
Carry out epitaxial growth high-quality InGaN/GaN MQW to lay the foundation.
(4) preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention,
Before epitaxial growth GaN cushion, yttrium-aluminium-garnet substrate being carried out flash annealing process, it is former that annealing can make substrate obtain
Sub-level even curface.
(5) preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention,
Under conditions of yttrium-aluminium-garnet substrate temperature is 400～500 DEG C grow GaN cushion, can effectively suppress substrate and
Interfacial reaction between thin film, provides abundant growth energy for epitaxial growth simultaneously.
(6) preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention,
Have employed low temperature (400-500 DEG C) epitaxy technology first one layer of GaN cushion of epitaxial growth on yttrium-aluminium-garnet substrate, by life
Long GaN cushion can obtain island GaN, and the multiple quantum well layer for the low defect of next step depositing high-quality is laid the groundwork, and is conducive to
Improve the photoelectric properties of device.
(7) preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention,
Growth technique is unique and simple, has repeatability.
Accompanying drawing explanation
Fig. 1 is that the cross section of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate provided by the present invention shows
It is intended to；
Fig. 2 is the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate prepared by the embodiment of the present invention 1
ω-2 θ scanning spectra；
Fig. 3 is the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate prepared by the embodiment of the present invention 1
PL spectrum test figure.
Detailed description of the invention
Below, in conjunction with accompanying drawing and detailed description of the invention, the present invention is described further:
As it is shown in figure 1, the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, serve as a contrast including yttrium-aluminium-garnet
The end 11, GaN cushion 12 and InGaN/GaN SQW 13, yttrium-aluminium-garnet substrate 11 grows GaN cushion 12 He successively
InGaN/GaN SQW 13.
Further, described yttrium-aluminium-garnet substrate with (111) face inclined 0.5-1 ° of (100) face as epitaxial surface, described yttrium aluminum
The epitaxial orientation relation of garnet substrate and described GaN cushion is: (0001) face of GaN cushion is parallel to yttrium-aluminium-garnet
(111) face of substrate.
It addition, the thickness of described GaN cushion is 50-200nm；In described InGaN/GaN SQW, InGaN well layer
Thickness be the thickness of 2-3nm, GaN barrier layer be 10-15nm, periodicity is 7-12.
Embodiment 1
The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, its preparation method comprises the following steps:
(1) the choosing of substrate and its crystal orientation: use Y3Al5O12Substrate, with (111) face, inclined 0.5 ° of (100) face is as extension
Face, crystalline epitaxial orientation relationship is: (0001) face of GaN is parallel to Y3Al5O12(111) face, i.e. GaN (0001) //Y3Al5O12
(111)；
(2) substrate surface annealing: by Y3Al5O12Substrate puts into reative cell, right in nitrogen atmosphere at 800 DEG C
Y3Al5O12Substrate carries out in-situ annealing and processes 2h, and annealing can make Y3Al5O12Substrate obtains the surface of atomically flating；
(3) GaN cushion epitaxial growth: Y3Al5O12Underlayer temperature is adjusted to 400 DEG C, and the pressure at reative cell is 4.0 × 10-3Torr, laser energy are 220mJ, laser frequency is 30Hz, the speed of growth is that growth thickness is 50nm's under conditions of 80nm/h
GaN cushion；
(4) epitaxial growth of InGaN/GaN SQW: using molecular beam epitaxial growth technique, growth temperature is 750 DEG C,
Pressure at reative cell is 4.0 × 10-5Under the conditions of Torr, V/III value are 40, the speed of growth is 60nm/h, obtain in step (3)
GaN buffer growth InGaN/GaN SQW, described InGaN/GaN SQW is that the InGaN well layer/GaN in 12 cycles is built
Layer, wherein the thickness of InGaN well layer is 2nm；The thickness of GaN barrier layer is 10nm.
Fig. 2 is that ω-2 θ of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate prepared by the present embodiment sweeps
Tracing spectrum, it is clear that SQW satellites is clearly clearly demarcated, matching collection of illustrative plates coincide, show SQW interface cohesion
Character is the best；Its highest peak is GaN, its half-peak breadth (FWHM) value be less than 0.1 °, side, left and right be followed successively by first order satellites,
Second level satellites ... last calculated SQW well layer 2nm, barrier layer 10nm, shows prepared by the present invention nonpolar
InGaN/GaN MQW either in defect concentration still at crystalline quality, all there is extraordinary performance.
Fig. 3 is that the PL spectrum of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate prepared by the present embodiment is surveyed
Attempt.As seen from the figure, temperature is that under 293K, the test of PL spectrum obtains glow peak wavelength is 445nm, a width of 21.6nm of half-peak.Show this
InGaN/GaN MQW has extraordinary optical property.
Embodiment 2
The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, its preparation method comprises the following steps:
(1) the choosing of substrate and its crystal orientation: use Y3Al5O12Substrate, with (111) face, inclined 1 ° of (100) face is as epitaxial surface,
Crystalline epitaxial orientation relationship is: (0001) face of GaN is parallel to Y3Al5O12(111) face, i.e. GaN (0001) //Y3Al5O12
(111)；
(2) substrate surface annealing: by Y3Al5O12Substrate puts into reative cell, right in nitrogen atmosphere at 900 DEG C
Y3Al5O12Substrate carries out in-situ annealing and processes 1h, and annealing can make Y3Al5O12Substrate obtains the surface of atomically flating；
(3) GaN cushion epitaxial growth: by Y3Al5O12Underlayer temperature is adjusted to 500 DEG C, and the pressure at reative cell is 6.0 ×
10-3Torr, laser energy are 300mJ, laser frequency is 10Hz, the speed of growth is that growth thickness is under conditions of 60nm/h
The GaN cushion of 200nm；
(4) epitaxial growth of InGaN/GaN MQW: using molecular beam epitaxial growth technique, growth temperature is 850
DEG C, the pressure at reative cell is 5.0 × 10-5Under the conditions of Torr, V/III value are 50, the speed of growth is 80nm/h, in step (3)
The GaN buffer growth InGaN/GaN MQW obtained, described InGaN/GaN SQW be 7 cycles InGaN well layer/
GaN barrier layer, wherein the thickness of InGaN well layer is 3nm；The thickness of GaN barrier layer is 15nm.
InGaN/GaN MQW on yttrium-aluminium-garnet substrate prepared by the present embodiment has extraordinary optical
Can, test data are close with embodiment 1, do not repeat them here.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection domain of the claims in the present invention
Within.
Claims (8)
1. the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate, it is characterised in that include that yttrium-aluminium-garnet serves as a contrast
The end, GaN cushion and InGaN/GaN SQW, described yttrium-aluminium-garnet substrate grows described GaN cushion and described successively
InGaN/GaN SQW.
The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate the most according to claim 1, its feature exists
In, described yttrium-aluminium-garnet substrate with (111) face inclined 0.5-1 ° of (100) face as epitaxial surface, described yttrium-aluminium-garnet substrate and institute
The epitaxial orientation relation stating GaN cushion is: (0001) face of GaN cushion is parallel to (111) face of yttrium-aluminium-garnet substrate.
The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate the most according to claim 1, its feature exists
In, the thickness of described GaN cushion is 50-200nm；In described InGaN/GaN SQW, the thickness of InGaN well layer is 2-
The thickness of 3nm, GaN barrier layer is 10-15nm, and periodicity is 7-12.
4. the preparation method of the InGaN/GaN MQW that a kind is grown on yttrium-aluminium-garnet substrate, it is characterised in that include
Following steps:
1) using yttrium-aluminium-garnet substrate, inclined 0.5-1 ° of (100) face, (111) face with yttrium-aluminium-garnet substrate is as epitaxial surface, outward
Epitaxial growth GaN cushion；Wherein, the epitaxial orientation relation of yttrium-aluminium-garnet substrate and GaN cushion is: GaN cushion
(0001) face is parallel to (111) face of yttrium-aluminium-garnet substrate；
2) at GaN cushion Epitaxial growth InGaN/GaN SQW.
The preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate the most according to claim 4,
It is characterized in that, before epitaxial growth GaN cushion, yttrium-aluminium-garnet substrate being carried out flash annealing process, concrete operations are such as
Under: yttrium-aluminium-garnet substrate is put into reative cell, at 800-900 DEG C, nitrogen atmosphere carries out in-situ annealing and processes 1-2h.
The preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate the most according to claim 4,
It is characterized in that, the process conditions of epitaxial growth GaN cushion are: use laser assisted molecular beam epitaxial growth technique, by yttrium
Aluminium garnet substrate temperature is maintained at 400-500 DEG C, and the pressure controlling reative cell is 4.0-6.0 × 10-3Torr, laser energy
For 220-300mJ, laser frequency be 10-30Hz, the speed of growth be 60-80nm/h.
The preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate the most according to claim 4,
It is characterized in that, the process conditions of epitaxial growth InGaN/GaN SQW are: use molecular beam epitaxial growth technique, by yttrium aluminum
Garnet substrate temperature is maintained at 750-850 DEG C, and the pressure controlling reative cell is 4.0-5.0 × 10-5Torr, V/III value are
40-50, the speed of growth are 60-80nm/h.
The preparation method of the InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate the most according to claim 4,
It is characterized in that, the thickness of described GaN cushion is 50-200nm；In described InGaN/GaN SQW, the thickness of InGaN well layer
Degree is 10-15nm for the thickness of 2-3nm, GaN barrier layer, and periodicity is 7-12.
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| CN104952986A (en) * | 2015-06-03 | 2015-09-30 | 西安交通大学 | Production method of GaN-based white LED epitaxial structure |
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