CN101771117A - Light-emitting device and manufacturing method thereof - Google Patents
Light-emitting device and manufacturing method thereof Download PDFInfo
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- CN101771117A CN101771117A CN201010103840A CN201010103840A CN101771117A CN 101771117 A CN101771117 A CN 101771117A CN 201010103840 A CN201010103840 A CN 201010103840A CN 201010103840 A CN201010103840 A CN 201010103840A CN 101771117 A CN101771117 A CN 101771117A
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- luminescence generated
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004020 luminiscence type Methods 0.000 claims description 28
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 11
- 230000001795 light effect Effects 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002178 crystalline material Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 2
- VXLGWCOZCKOULK-UHFFFAOYSA-K aluminum;cerium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Al].[Ce+3] VXLGWCOZCKOULK-UHFFFAOYSA-K 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000010979 ruby Substances 0.000 claims description 2
- 229910001750 ruby Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 238000005424 photoluminescence Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 2
- 230000005284 excitation Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention discloses a light-emitting device which comprises a substrate, a light-emitting diode prepared or combined on the substrate and related optical and mechanical structures. The substrate consists of crystals with photoluminescence function and polycrystalline or amorphous materials, and light emitted by the light-emitting diode is emitted by penetrating the substrate. The substrate emits the photoluminescence which is longer than the wavelength of the light-emitting diode under the photoluminescence excitation of the light-emitting diode. The photoluminescence which is transmitted by the light-emitting diode is mixed with the photoluminescence of the substrate for producing white light. The invention further discloses a method for preparing the light-emitting device.
Description
Technical field
The present invention relates to a kind of luminescent device and manufacture method thereof, device and manufacture method thereof that particularly a kind of electroluminescence combines with luminescence generated by light.
Background technology
The total solids that light-emitting diode (LED) has, chroma is good and the luminous efficiency advantages of higher, begins gradually to be applied to show and lighting field.What extensively adopt in illumination is used is white light LEDs, and this device normally utilizes blue-ray LED not exclusively to excite yellow fluorescent powder to obtain gold-tinted, then the blue light and yellow light mix generation white light that send of LED.For example select for use at jewel (Al
2O
3) or carborundum (SiC) substrate on gallium nitride (Ga1-xInxN (x the approximates 0.25)) blue LED chip of adulterated al, the indium of growing be packaged together with cerium-doped yttrium aluminum garnet (YAG:Ce) the gold-tinted fluorescent material that is blended in organosilicon or the epoxy resin, promptly can be made into white light emitting device.The white light luminous efficiency that adopts blue-ray LED to excite gold-tinted fluorescent material to obtain is higher, but color rendering index is lower.White light also can adopt jewel (Al
2O
3) or carborundum (SiC) substrate on gallium nitride (Ga (Al/In) N) ultraviolet or the blue purple LED of adulterated al, the indium of growing excite indigo plant, green, red (RGB) look fluorescent material to obtain, this device also is the unit luminescent device that purple LED chip and RGB fluorescent material are packaged together and form, this white light LEDs color rendering index is than higher, but luminous efficiency is lower.Be bonded on the luminescent device of light-emitting diode preparation with the fluorescent material that is blended in the resin; usually can occur owing to the defectives such as bigger colour cast, aberration and yellow circle that fluorescent material is inhomogeneous, weight ratio changes, the not equal reason of fluorescent powder grain scattering produces that are blended in the resin; and these organic resins are also easily affected by environment and phenomenon such as aging yellowing occurs, and this gives in the application of white light LEDs and brings inconvenience.Address the above problem is that current white-light illuminating is used a research topic of paying special attention to.
Fig. 1 is the structural representation of the white light LED part of prior art, wherein, 105 is the cavity type conductive electrode of light-emitting diode, and 106 is the electron type conductive electrode, the 101st, the crystal growth transition zone, 102 is the electron type conductive layer, and 103 is luminescent layer, and 104 are the hole conduction layer, the 200th, reflection layer, 300 is the substrate of light-emitting diode, the 400th, and gold-tinted fluorescent material, 500 is potting resin.
Summary of the invention
The purpose of this invention is to provide a kind of the have preparation of being easy to, simple, long-life, high efficiency luminescent device and manufacture method.
Another object of the present invention provides a kind of luminescent device of wavelength conversion, comprises monochrome, polychrome and white luminous device.
For realizing above-mentioned one or more purpose, the invention provides a kind of luminescent device, comprise substrate, prepare or be combined in light-emitting diode and relevant optics and mechanical structure on the described substrate, it is characterized in that, described substrate is made of the crystal with luminescence generated by light function, polycrystal or non-crystalline material, the light transmission substrate emission that described light-emitting diode sends.
According to an aspect of the present invention, aforesaid substrate is by comprising cerium-doped yttrium aluminum garnet (YAG:Ce), ruby (Al
2O
3: Cr), sapphire (Al
2O
3: Ti), mix Cerium aluminate lithium (Li (Al
2O
3): the monocrystalline of one or more Ce), polycrystalline or non-crystalline material are made.
According to an aspect of the present invention, above-mentioned light-emitting diode is made by the nitrogen aluminium indium gallium semi-conducting material of different component, and the wavelength peak scope of the light of being launched is 350～560nm.
According to an aspect of the present invention, aforesaid substrate comprises intermediate color between redness, green, blueness and red green intermediate color, the green blueness at the color of the light of launching under the exciting of the light that described light-emitting diode sends.
According to an aspect of the present invention, the light that aforesaid substrate partially absorbs, part transmission light-emitting diode sends, the light of described substrate transmission and its light that produces under the luminescence generated by light effect are mixed into white light.
The present invention is by making light-emitting diode on the crystal substrate with luminescence generated by light function, a part of optically stimulated crystal substrate that light-emitting diode sends, make crystal substrate luminous, crystal substrate is crossed in other a part of transmittance that light-emitting diode sends and light that crystal substrate sends forms mixed light.
Luminescent device of the present invention comprises crystal substrate, the light-emitting diode for preparing on this crystal substrate, reflection part and fixed mechanism.Described crystal substrate has photoluminescence property, the wave-length coverage of the light emitted line of this luminescent device arrives blueish green region in ultraviolet, and the crystal substrate with luminescence generated by light function excites down at the light emitted line of above-mentioned luminescent device, launch to the intermediate color between red, green, blue and red, green, the blueness, perhaps form mixed-color light.Wherein reflection part is to adopt multi-form functional part according to different occasions.
The wavelength peak scope of the light emitted line of this luminescent device is 350～560nm.This substrate with luminescence generated by light effect is a partially transparent at 350～560nm.
Luminescent device can comprise one or more inorganic light-emitting diode.Light-emitting diode can adopt surface encapsulation, COB (Chip on Board) encapsulation, upside-down mounting forms such as (Flip Chip) to encapsulate.When adopting the COB encapsulation, its substrate (board) is shaped on reflective optical texture.
A plurality of light emitting diode string, when in parallel, can exchange with 100-380V and drive, can utilize self rectification characteristic of light-emitting diode this moment, also can pass through the bridge rectifier rear drive.
This luminescent device is for being positioned at the side of light guide plate, and it is illuminated to be called side; Perhaps be arranged on light guide plate under, be called straight-down negative.This substrate with luminescence generated by light is made of crystal, polycrystal or non-crystalline material, and photoluminescence quantum efficiencies is greater than 30%.
According to the present invention, a kind of method of making above-mentioned luminescent device also is provided, comprise the steps: on substrate, directly to prepare light-emitting diode with luminescence generated by light function.
According to a further aspect in the invention, a kind of method of making above-mentioned luminescent device comprises the steps: that (1) prepares light-emitting diode on light emitting diode base plate; (2) by lift-off technology light-emitting diode is peeled off above-mentioned light emitting diode base plate; (3) light-emitting diode that strips down is attached on the substrate with luminescence generated by light function.
According to a further aspect in the invention, a kind of method of making above-mentioned luminescent device comprises the steps: that (1) prepares light-emitting diode on light emitting diode base plate; (2) in a side relative with light emitting diode base plate, the substrate junction that will have the luminescence generated by light function is incorporated on the light-emitting diode.
According to a further aspect in the invention, in the method for above-mentioned manufacturing luminescent device, a side that also is included in light-emitting diode prepares the step in reflector, and described reflector is used for the light that light-emitting diode sends is reflexed to the substrate with luminescence generated by light function.
Of the present invention have a following beneficial effect:
In device of the present invention, adopted single color LED to excite the luminescence generated by light substrate of monocrystalline, polycrystalline or amorphous, the organic resin of having avoided previous method to bring is affected by environment easily and phenomenon such as aging yellowing occurs.
In display unit of the present invention, monocrystalline, polycrystalline or amorphous substrate that use has the luminescence generated by light function convert the monochromatic light device to the white light device, have avoided the unsteadiness of the white light device chromaticity coordinates that the technology unsteadiness of previous method brings.
Description of drawings
Fig. 1 is the structural representation of the luminescent device of prior art.
Fig. 2 is the structural representation according to the luminescent device of one embodiment of the present invention.
Fig. 3 is the structural representation according to the luminescent device of another embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described.
Execution mode one
Fig. 2 shows the structural representation according to the luminescent device of one embodiment of the present invention.This luminescent device comprises: light-emitting diode, reflector 200 and the crystal substrate 600 with luminescence generated by light function.Wherein light-emitting diode comprises: the luminescent layer 103 of the crystal growth transition zone 101 of light-emitting diode, the electron type conductive layer 102 of light-emitting diode, inorganic light-emitting diode, the cavity type conductive layer 104 of light-emitting diode, the cavity type conductive electrode 105 of light-emitting diode, the electron type conductive electrode 106 of light-emitting diode.
The operation principle of luminescent device shown in Figure 2 is as follows: the luminescent layer 103 of light-emitting diode sends wave-length coverage at the light (light wavelength scope can according to application need select) of ultraviolet to blueish green region, the light that sends is transmitted into crystal substrate 600, the Color Range of the light that wherein a part of optically stimulated crystal substrate, crystal substrate are launched by the luminescence generated by light effect comprises the intermediate color between redness, green, blueness and redness, green, the blueness.Another part light that lumination of light emitting diode layer 103 sends penetrates crystal substrate 600, is mixed into mixed-color light with above-mentioned crystal substrate 600 by the light that the luminescence generated by light effect produces, as white light.
In this execution mode, each semiconductor layer of light-emitting diode (crystal growth transition zone 101 that comprises light-emitting diode, the electron type conductive layer 102 of light-emitting diode, the luminescent layer 103 of inorganic light-emitting diode, the cavity type conductive layer 104 of light-emitting diode) by the semi-conducting material of the gallium nitride of adulterated al, indium, promptly (Al) Ga (In) N material is made, and the glow color of light-emitting diode is a blue light.
The cavity type conductive electrode 105 of light-emitting diode is made by metal material nickel (Ni) and gold (Au).The electron type conductive electrode 106 of light-emitting diode is made by metal material titanium (Ti) and aluminium (Al).The cavity type conductive electrode 105 of light-emitting diode also can be used as reflector 200.Crystal substrate 600 is made of cerium-doped yttrium aluminum garnet (YAG:Ce) monocrystalline.
According to the present invention, can make luminescent device shown in Figure 2 with two kinds of methods.First method comprises: go up directly preparation light-emitting diode at cerium-doped yttrium aluminum garnet substrate 600 (this substrate is the crystal substrate with luminescence generated by light effect), this light-emitting diode comprises: crystal growth transition zone 101, electron type conductive layer 102, luminescent layer 103, cavity type conductive layer 104, cavity type conductive electrode 105, electron type conductive electrode 106.
Second kind of manufacture method comprises: prepare light-emitting diode on sapphire substrate, this light-emitting diode comprises: crystal growth transition zone 101, electron type conductive layer 102, luminescent layer 103, cavity type conductive layer 104, cavity type conductive electrode 105, electron type conductive electrode 106; By lift-off technology light-emitting diode 100 is peeled off sapphire substrate; The light-emitting diode that strips down is attached on the crystal substrate 600 with luminescence generated by light effect.
Execution mode two
Fig. 3 shows the structural representation according to the luminescent device of another embodiment of the invention.Luminescent device shown in Figure 3 comprises: the substrate 300 of light-emitting diode, light-emitting diode, reflector 200, have the crystal substrate 600 of luminous effect.Wherein light-emitting diode comprises: the crystal growth transition zone 101 of light-emitting diode, the electron type conductive layer 102 of light-emitting diode, the luminescent layer 103 of light-emitting diode, the cavity type conductive layer 104 of light-emitting diode, the cavity type conductive electrode 105 of light-emitting diode, the electron type conductive electrode 106 of light-emitting diode.
In this execution mode, each semiconductor layer of light-emitting diode (crystal growth transition zone 101 that comprises light-emitting diode, the electron type conductive layer 102 of light-emitting diode, the luminescent layer 103 of inorganic light-emitting diode, the cavity type conductive layer 104 of light-emitting diode) by the semi-conducting material of the gallium nitride of adulterated al, indium, promptly (Al) Ga (In) N material is made, and the glow color of light-emitting diode is a blue light.
The cavity type electrode 105 of light-emitting diode is made by the semitransparent layer of metal material nickel (Ni) and gold (Au).The electron type conductive electrode 106 of light-emitting diode is made by metal material titanium (Ti) and aluminium (Al).Crystal substrate 300 is that cerium-doped yttrium aluminum garnet (YAG:Ce) monocrystalline constitutes.
The difference of this execution mode and execution mode two is, light emitting diode base plate 300 is not stripped from manufacturing process, downside at light emitting diode base plate is provided with reflector 300, and the crystal substrate 600 with luminous effect is arranged on a side relative with light emitting diode base plate 300.
Luminescent device manufacturing process shown in Figure 3 comprises: the light-emitting diode of preparation on sapphire substrate 300, and this light-emitting diode comprises: crystal growth transition zone 101, electron type conductive layer 102, luminescent layer 103, cavity type conductive layer 104, cavity type conductive electrode 105, electron type conductive electrode 106; On cavity type conductive electrode 105, in conjunction with crystal substrate 600 with luminescence generated by light effect.
The operation principle of luminescent device shown in Figure 3 is as follows: lumination of light emitting diode layer 103 sends blue light (also can send the light of ultraviolet to blueish green region, the light wavelength scope can be selected according to application need), the light that sends is transmitted into crystal substrate 600, wherein a part of optically stimulated crystal substrate 600, crystal substrate 600 is redness by the color of the light that the luminescence generated by light effect is launched, green intermediate color, another part blue light that lumination of light emitting diode layer 103 sends penetrates crystal substrate 600, and the light that produces with above-mentioned crystal substrate 600 luminescence generated by light effects is mixed into white light.
More than be described at preferred implementation of the present invention, it should be appreciated by those skilled in the art that not breaking away from the scope basis of spirit of the present invention and claims and can carry out variations and modifications.
Claims (10)
1. luminescent device, comprise substrate, prepare or be combined in light-emitting diode and relevant optics and mechanical structure on the described substrate, it is characterized in that, described substrate is made of the crystal with luminescence generated by light function, polycrystal or non-crystalline material, the described substrate emission of the light transmission that described light-emitting diode sends.
2. luminescent device according to claim 1 is characterized in that, described substrate is by comprising cerium-doped yttrium aluminum garnet (YAG:Ce), ruby (Al
2O
3: Cr), sapphire (Al
2O
3: Ti), mix Cerium aluminate lithium (Li (Al
2O
3): the monocrystalline of one or more Ce), polycrystalline or non-crystalline material are made.
3. luminescent device according to claim 1 is characterized in that, described light-emitting diode is made by the nitrogen aluminium indium gallium semi-conducting material of different component, and the wavelength peak scope of the light of being launched is 350～560nm.
4. according to each described luminescent device in the claim 1～3, it is characterized in that described substrate comprises intermediate color between redness, green, blueness and red green intermediate color, the green blueness at the color of the light of launching under the exciting of the light that described light-emitting diode sends.
5. according to each described luminescent device in the claim 1～3, it is characterized in that, the light that described substrate portion absorbs, part transmission light-emitting diode sends, the light of described substrate transmission and its light that produces under the luminescence generated by light effect are mixed into white light.
6. the method for each described luminescent device in manufacturing such as the claim 1～5 comprises the steps: on the substrate with luminescence generated by light function directly preparation light-emitting diode.
7. the method for each described luminescent device in manufacturing such as the claim 1～5 comprises the steps:
(1) on light emitting diode base plate, prepares light-emitting diode;
(2) by lift-off technology light-emitting diode is peeled off above-mentioned light emitting diode base plate;
(3) inorganic light-emitting diode that strips down is attached on the substrate with luminescence generated by light function.
8. as the method for claim 6 or 7 described manufacturing luminescent devices, it is characterized in that a side that also is included in light-emitting diode prepares the step in reflector, described reflector is used for the light that light-emitting diode sends is reflexed to the substrate with luminescence generated by light function.
9. the method for each described luminescent device in manufacturing such as the claim 1～5 comprises the steps:
(1) on light emitting diode base plate, prepares light-emitting diode;
(2) in a side relative with light emitting diode base plate, the substrate junction that will have the luminescence generated by light function is incorporated on the light-emitting diode.
10. the method for manufacturing luminescent device as claimed in claim 9 is characterized in that, the opposite side that also is included in light-emitting diode prepares the step in reflector, and described reflector is used for the light that light-emitting diode sends is reflexed to the substrate with luminescence generated by light function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101038402A CN101771117B (en) | 2010-02-02 | 2010-02-02 | Light-emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101038402A CN101771117B (en) | 2010-02-02 | 2010-02-02 | Light-emitting device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101771117A true CN101771117A (en) | 2010-07-07 |
| CN101771117B CN101771117B (en) | 2012-05-30 |
Family
ID=42503834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101038402A Expired - Fee Related CN101771117B (en) | 2010-02-02 | 2010-02-02 | Light-emitting device and manufacturing method thereof |
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| CN102709458A (en) * | 2012-05-21 | 2012-10-03 | 苏州晶品光电科技有限公司 | LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof |
| CN103335226A (en) * | 2013-06-19 | 2013-10-02 | 福建省万邦光电科技有限公司 | LED (light emitting diode) bulb lamp capable of emitting lights in all directions |
| CN103557445A (en) * | 2013-08-26 | 2014-02-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Side-emission semiconductor light-emitting device, backlight module and area light source |
| CN103765585A (en) * | 2011-08-26 | 2014-04-30 | 美光科技公司 | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
| CN105405949A (en) * | 2014-08-29 | 2016-03-16 | 无锡华润华晶微电子有限公司 | Light-emitting diode lamp filament and preparation method therefor |
| CN106025008A (en) * | 2016-07-12 | 2016-10-12 | 河源市众拓光电科技有限公司 | LED epitaxial wafer growing on yttrium aluminum garnet substrate and manufacturing method |
| CN106098881A (en) * | 2016-07-12 | 2016-11-09 | 河源市众拓光电科技有限公司 | The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate and preparation method |
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2010
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| CN103765585A (en) * | 2011-08-26 | 2014-04-30 | 美光科技公司 | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
| CN103765585B (en) * | 2011-08-26 | 2018-04-06 | 美光科技公司 | The solid state radiation sensor device and its associated system and method for solid state radiation sensor with chip upside-down mounting type installation |
| US10079333B2 (en) | 2011-08-26 | 2018-09-18 | Micron Technology, Inc. | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
| US10541355B2 (en) | 2011-08-26 | 2020-01-21 | Micron Technology, Inc. | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
| US11929456B2 (en) | 2011-08-26 | 2024-03-12 | Lodestar Licensing Group Llc | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
| CN102709458A (en) * | 2012-05-21 | 2012-10-03 | 苏州晶品光电科技有限公司 | LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof |
| CN103335226A (en) * | 2013-06-19 | 2013-10-02 | 福建省万邦光电科技有限公司 | LED (light emitting diode) bulb lamp capable of emitting lights in all directions |
| CN103557445A (en) * | 2013-08-26 | 2014-02-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Side-emission semiconductor light-emitting device, backlight module and area light source |
| CN105405949A (en) * | 2014-08-29 | 2016-03-16 | 无锡华润华晶微电子有限公司 | Light-emitting diode lamp filament and preparation method therefor |
| CN106025008A (en) * | 2016-07-12 | 2016-10-12 | 河源市众拓光电科技有限公司 | LED epitaxial wafer growing on yttrium aluminum garnet substrate and manufacturing method |
| CN106098881A (en) * | 2016-07-12 | 2016-11-09 | 河源市众拓光电科技有限公司 | The InGaN/GaN MQW being grown on yttrium-aluminium-garnet substrate and preparation method |
| CN109874803A (en) * | 2019-04-15 | 2019-06-14 | 兰州大学 | It is a kind of to promote fluorescent powder of plant growth and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN101771117B (en) | 2012-05-30 |
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