CN106057931A - Large open-circuit voltage nano heterojunction solar energy cell and manufacturing method - Google Patents
Large open-circuit voltage nano heterojunction solar energy cell and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000002070 nanowire Substances 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 238000002161 passivation Methods 0.000 claims abstract description 36
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010931 gold Substances 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- 239000010936 titanium Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 104
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 239000002356 single layer Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 19
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 15
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 15
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 9
- 241000209094 Oryza Species 0.000 claims description 9
- 235000007164 Oryza sativa Nutrition 0.000 claims description 9
- 235000009566 rice Nutrition 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 235000012149 noodles Nutrition 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 claims description 5
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- -1 Polyethylene Polymers 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 2
- 238000004062 sedimentation Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 10
- 239000012528 membrane Substances 0.000 description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 238000002309 gasification Methods 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a large open-circuit voltage nano heterojunction solar energy cell and a manufacturing method thereof. The solar energy cell comprises a substrate layer, a p-type semiconductor nano wire, a gold electrode, a passivation layer, an n-type semiconductor film and a titanium electrode. According to the method, firstly, the p-type semiconductor nano wire is transferred onto the substrate layer; secondly, the gold electrode is deposited on one end of the p-type semiconductor nano wire through utilizing the lithography technology and a magnetron sputtering method; thirdly, the passivation layer is deposited on the other end of the p-type semiconductor nano wire through utilizing the lithography technology and an atomic layer sedimentation method; fourthly, the n-type semiconductor film is deposited on the passivation layer through utilizing the atomic layer sedimentation method; and fifthly, the titanium electrode is deposited on the n-type semiconductor film through utilizing the magnetron sputtering method. According to the method, the nano heterojunction structure is utilized, through material selection and structure and process optimization, the large open-circuit voltage nano heterojunction solar energy cell having an open-circuit voltage greater than 1V is realized.
Description
Technical field:
The present invention relates to nano solar field of batteries, more particularly to the one big open-circuit voltage nano heterojunction sun
Can battery and preparation method.
Background technology:
World's conventional energy resource short supply crisis is day by day serious, and a large amount of exploitation of fossil energy have become and cause nature
The one of the main reasons that environmental pollution and environment for human survival deteriorate, finding emerging energy has become world's hot issue.Respectively
Planting in new forms of energy, solar energy power generating has the advantages such as pollution-free, sustainable, total amount big, distribution wide, application form is various,
Paid much attention to by countries in the world.
Open-circuit voltage is the important parameter characterizing solaode.Big open-circuit voltage is the basis obtaining high conversion efficiency,
Big open-circuit voltage can promote absorbing thus the raising utilization rate to sunlight of high-energy photon.It addition, big open-circuit voltage is big
The basis of output voltage, this makes big open-circuit voltage solaode have many special applications, such as solar mobile phone charging device etc..
For solar module, big open-circuit voltage can reduce Tandem devices quantity, thus reduces battery volume, it is easier to
Realize the manufacture of lightweight solaode.
But the open-circuit voltage of current various solaode is the most on the low side.Monocrystal silicon in first generation solaode
Being only about 0.7V with the open-circuit voltage of polycrystal silicon cell, the highest of the amorphous silicon battery reported at present is 0.85V.The second filial generation
Gallium arsenide cells and cadmium telluride cells in thin-film solar cells can make more greatly open-circuit voltage improve extremely due to energy gap
1V and 0.85V, Cu-In selenide and Copper indium gallium selenide battery then only have about 0.7V.Dye sensitization of solar in the third generation
Battery only has about 0.73V.As can be seen here, long-term Innovation Input does not make the shortcoming that above-mentioned all kinds of battery open circuit voltage is low obtain
To improve.
Summary of the invention:
The present invention is directed to the deficiencies in the prior art, it is proposed that a kind of big nano heterogeneous joint solar cell of open-circuit voltage and system
Preparation Method, it is intended to obtain the nano heterogeneous joint solar cell with big open-circuit voltage.
For achieving the above object, the present invention proposes a kind of big nano heterogeneous joint solar cell of open-circuit voltage, its feature
Being: include substrate layer (1), being provided with p-type semiconductor nanowires (2) on described substrate layer (1), described p-type quasiconductor is received
It is provided with gold electrode (3) on one end of rice noodle (2), on the other end of described p-type semiconductor nanowires (2), is provided with passivation layer
(4), on described passivation layer (4), it is provided with n-type semiconductive thin film (5), on described n-type semiconductive thin film (5), is provided with titanium electricity
Pole (6).
As preferably, described substrate layer (1) is quartz glass, silicon chip, Sapphire Substrate or PET with oxide layer
(Polyethylene terephthalate, polyethylene terephthalate) flexible substrate.
As preferably, described p-type semiconductor nanowires (2) is p-type zinc selenide (ZnSe) nano wire；Described p-type
A diameter of 150-250 nanometer of semiconductor nanowires (2), a length of 15-25 micron, hole concentration is 1018-1019cm-3；Described
P-type semiconductor nanowires (2) on substrate layer (1) in horizontal array arrange, p-type semiconductor nanowires parallel interval is
1-5 micron.
As preferably, described gold electrode (3) thickness is 50-100 nanometer.
As preferably, described passivation layer (4) is silicon nitride (Si3N4) or aluminium oxide (Al2O3) layer；Described passivation layer (4) is thick
Degree is 4-8 nanometer；One end of p-type semiconductor nanowires (2) is uniformly wrapped up by described passivation layer (4).
As preferably, described n-type semiconductive thin film (5) is n-type cadmium sulfide (CdS) thin film；Described n-type semiconductor film
The thickness of film (5) is 40-100 nanometer.
As preferably, the thickness of described Ti electrode (6) is 20-40 nanometer.
For achieving the above object, the preparation method of the present invention comprises the steps:
1) p-type semiconductor nanowires is transferred on substrate layer, is allowed to arrange in horizontal array；
2) it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type quasiconductor receive by exposed and developed
Rice noodle one end is exposed, then is positioned in magnetic control sputtering device by this substrate layer, on one end that p-type semiconductor nanowires is exposed
Deposition gold electrode, is finally positioned over described substrate layer in acetone solvent, makes photoresist dissolve, and obtaining one end deposition has gold electricity
The p-type semiconductor nanowires of pole；
3) again it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type partly lead by exposed and developed
The other end of body nano wire is exposed, is then positioned in atomic layer deposition apparatus by this substrate layer, at p-type semiconductor nanowires
Deposit passivation layer on exposed one end；
4) atomic layer deposition method depositing n-type semiconductive thin film on passivation layer is used:
4a) step 3) in substrate layer be positioned in the reaction chamber of ald, confined reaction chamber by intracavity pressure
Power is evacuated to less than 10-4Pa, and heat make cavity inner temperature remain 130 DEG C；
4b) with thioacetamide (H3CCSNH2) powder and liquid dimethyl base cadmium Cd (CH3)2For presoma, with nitrogen for carrying
Gas and purification gas, and use heating mantle that thioacetamide is heated to 110 DEG C；
4c) it is passed through thioacetamide presoma, forms first monolayer of S in passivation layer surface；Then pass to nitrogen rinse
After walked remaining presoma and nitrogen by mechanical pump extraction；
4d) it is passed through dimethyl cadmium, the first monolayer mentioned above is formed second monolayer of Cd, the first monolayer and second
Monolayer forms S-Cd key；It is passed through after nitrogen rinses and is walked remaining presoma and nitrogen by mechanical pump extraction；
4e) it is repeated in step 4c) and 4d), number of repetition is 600-1500 time, completes the heavy of n-type semiconductive thin film
Long-pending；
5) by step 4) in substrate layer be positioned in magnetic control sputtering device, on n-type semiconductive thin film titanium deposition electricity
Pole；
6) by step 5) in substrate layer be positioned in acetone solvent, make photoresist dissolve；
7) by step 6) in substrate layer be positioned in quick anneal oven, cavity pressure is also evacuated to less than 10 by airtight furnace chamber- 3Pa, is rapidly heated to 300-400 DEG C, completes short annealing, and wherein, fast ramp up time is the 60-120 second, and annealing temperature is
300-400 DEG C, annealing time is 3-6 minute.
Compared with prior art, the present invention has a following beneficial outcomes:
In the present invention, choose and there is excellent photoelectric property and there is p-type ZnSe nano wire and the n-type of broad-band gap structure
Cadmium sulphide membrane, both construct the nano heterojunction with big build-up potential；In the present invention, take at p-type quasiconductor
Insert passivation layer between nano wire and n-type semiconductive thin film, and nano heterojunction is carried out short annealing process, above-mentioned arrange
Execute and can effectively reduce nano heterojunction boundary defect state quantity, and then reduce nano heterojunction leakage current in junction region to improve device
Open-circuit voltage；The open-circuit voltage of above-mentioned nano heterogeneous joint solar cell, up to more than 1V, reaches as high as 1.5V.
Accompanying drawing illustrates:
Fig. 1 is horizontal section structural representation of the present invention.
Fig. 2 is longitudinal profile structural representation of the present invention.
Fig. 3 is the fabrication processing figure of the present invention.
Detailed description of the invention:
Seeing figures.1.and.2, the present invention includes substrate layer (1), p-type semiconductor nanowires (2), gold electrode (3), passivation layer
(4), n-type semiconductive thin film (5), Ti electrode (6), be wherein provided with p-type semiconductor nanowires (2) on substrate layer (1), described
Be provided with gold electrode (3) on one end of p-type semiconductor nanowires (2), the other end of described p-type semiconductor nanowires (2) it
It is provided with passivation layer (4), on described passivation layer (4), is provided with n-type semiconductive thin film (5), described n-type semiconductive thin film (5)
On be provided with Ti electrode (6).Described substrate layer (1) is quartz glass, silicon chip, Sapphire Substrate or PET with oxide layer
Flexible substrate；Described p-type semiconductor nanowires (2) is p-type zinc selenide (ZnSe) nano wire, its a diameter of 150-250 nanometer,
A length of 15-25 micron, hole concentration is 1018-1019cm-3；Described p-type semiconductor nanowires (2) is on substrate layer (1)
Arranging in horizontal array, p-type semiconductor nanowires parallel interval is 1-5 micron；Described gold electrode (3) thickness is that 50-100 receives
Rice；Described passivation layer (4) is silicon nitride (Si3N4) or aluminium oxide (Al2O3) layer, thickness is 4-8 nanometer；Described n-type quasiconductor
Thin film (5) is n-type cadmium sulfide (CdS) thin film, and its thickness is 40-100 nanometer；The thickness of described Ti electrode (6) is that 20-40 receives
Rice.
Three embodiments of the making given below nano heterogeneous joint solar cell of a kind of big open-circuit voltage:
Embodiment 1, making substrate layer is quartz glass, and gold electrode thickness is 50 nanometers, and passivation layer is silicon nitride and thickness
Being 4 nanometers, n-type cadmium sulphide membrane thickness is 45 nanometers, Ti electrode thickness be the big open-circuit voltage nano heterojunction of 20 nanometers too
Sun can battery.
With reference to Fig. 3, the making step of the present embodiment is as follows:
1) by a diameter of 150-250 nanometer, a length of 15-25 micron, hole concentration is 1018-1019cm-3P-type selenizing
Zinc nano wire is transferred on substrate layer, and p-type ZnSe nano wire is arranged in horizontal array on substrate layer, parallel of nano wire
It is divided into 1-5 micron；
2) it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type quasiconductor receive by exposed and developed
Rice noodle one end is exposed, then is positioned in magnetic control sputtering device by this substrate layer, on one end that p-type ZnSe nano wire is exposed
Deposit thickness is the gold electrode of 50 nanometers, is finally positioned in acetone solvent by described substrate layer, makes photoresist dissolve, obtains
One end deposition has the p-type ZnSe nano wire of gold electrode；
3) again it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type selenizing by exposed and developed
The other end of zinc nano wire is exposed, is then positioned in atomic layer deposition apparatus by this substrate layer, at p-type ZnSe nano wire
On exposed one end, deposit thickness is the silicon nitride passivation of 4 nanometers；
4) atomic layer deposition method depositing n-type cadmium sulphide membrane on passivation layer is used:
4a0 is step 3) in substrate layer be positioned in the reaction chamber of ald, confined reaction chamber by intracavity pressure
Power is evacuated to less than 10-4Pa, and heat make cavity inner temperature remain 130 DEG C；
4b) with thioacetamide (H3CCSNH2) powder and liquid dimethyl base cadmium Cd (CH3)2For presoma, with nitrogen for carrying
Gas and purification gas, and use heating mantle that thioacetamide is heated to 110 DEG C；
4c) it is passed through thioacetamide presoma, forms first monolayer of S on silicon nitride passivation surface；Then pass to nitrogen
Remaining presoma and nitrogen is walked by mechanical pump extraction after gas flushing；
4d) it is passed through dimethyl cadmium, the first monolayer mentioned above is formed second monolayer of Cd, the first monolayer and second
Monolayer forms S-Cd key；It is passed through after nitrogen rinses and is taken away remaining presoma and nitrogen by mechanical pump；
4e) it is repeated in step 4c) and 4d), number of repetition is 680 times, completes the n-type cadmium sulfide that thickness is 45 nanometers
The deposition of thin film；
5) by step 4) in substrate layer be positioned in magnetic control sputtering device, on n-type cadmium sulphide membrane, deposit thickness is
The Ti electrode of 20 nanometers；
6) by step 5) in substrate layer be positioned in acetone solvent, make photoresist dissolve；
7) by step 6) in substrate layer be positioned in quick anneal oven, cavity pressure is also evacuated to less than 10 by airtight furnace chamber- 3Pa, is rapidly heated to 350 DEG C, completes short annealing, and wherein, fast ramp up time is 90 seconds, and annealing temperature is 350 DEG C, annealing
Time is 5 minutes.
After completing the preparation of the above-mentioned nano heterogeneous joint solar cell of big open-circuit voltage, it is surveyed under standard analog light source
Examination can obtain its open-circuit voltage be 1.3V, conversion efficiency be 5.27%.
Embodiment 2, making substrate layer is the silicon chip with oxide layer, and gold electrode thickness is 70 nanometers, and passivation layer is oxidation
Aluminum and thickness are 6 nanometers, and n-type cadmium sulphide membrane thickness is 60 nanometers, and Ti electrode thickness is the big open-circuit voltage nanometer of 30 nanometers
Heterojunction solar battery.
With reference to Fig. 3, the making step of the present embodiment is as follows:
1) by a diameter of 150-250 nanometer, a length of 15-25 micron, hole concentration is 1018-1019The p-type selenium of cm-3
Changing zinc nano wire to be transferred on substrate layer, p-type ZnSe nano wire is arranged in horizontal array on substrate layer, and nano wire is parallel
It is spaced apart 1-5 micron；
2) it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type quasiconductor receive by exposed and developed
Rice noodle one end is exposed, then is positioned in magnetic control sputtering device by this substrate layer, on one end that p-type ZnSe nano wire is exposed
Deposit thickness is the gold electrode of 70 nanometers, is finally positioned in acetone solvent by described substrate layer, makes photoresist dissolve, obtains
One end deposition has the p-type ZnSe nano wire of gold electrode；
3) again it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type selenizing by exposed and developed
The other end of zinc nano wire is exposed, is then positioned in atomic layer deposition apparatus by this substrate layer, at p-type ZnSe nano wire
On exposed one end, deposit thickness is the alumina passivation layer of 6 nanometers；
4) atomic layer deposition method depositing n-type cadmium sulphide membrane on passivation layer is used:
4a) step 3) in substrate layer be positioned in the reaction chamber of ald, confined reaction chamber by intracavity pressure
Power is evacuated to less than 10-4Pa, and heat make cavity inner temperature remain 130 DEG C；
4b) with thioacetamide (H3CCSNH2) powder and liquid dimethyl base cadmium Cd (CH3)2For presoma, with nitrogen for carrying
Gas and purification gas, and use heating mantle that thioacetamide is heated to 110 DEG C；
4c) it is passed through thioacetamide presoma, forms first monolayer of S on alumina passivation layer surface；Then pass to nitrogen
Remaining presoma and nitrogen is walked by mechanical pump extraction after gas flushing；
4d) it is passed through dimethyl cadmium, the first monolayer mentioned above is formed second monolayer of Cd, the first monolayer and second
Monolayer forms S-Cd key；It is passed through after nitrogen rinses and is taken away remaining presoma and nitrogen by mechanical pump；
4e) it is repeated in step 4c) and 4d), number of repetition is 900 times, completes the n-type cadmium sulfide that thickness is 60 nanometers
The deposition of thin film；
5) by step 4) in substrate layer be positioned in magnetic control sputtering device, on n-type cadmium sulphide membrane, deposit thickness is
The Ti electrode of 30 nanometers；
6) by step 5) in substrate layer be positioned in acetone solvent, make photoresist dissolve；
7) by step 6) in substrate layer be positioned in quick anneal oven, cavity pressure is also evacuated to less than 10 by airtight furnace chamber- 3Pa, is rapidly heated to 400 DEG C, completes short annealing, and wherein, fast ramp up time is 120 seconds, and annealing temperature is 400 DEG C, moves back
The fire time is 6 minutes.
After completing the preparation of the above-mentioned nano heterogeneous joint solar cell of big open-circuit voltage, it is surveyed under standard analog light source
Examination can obtain its open-circuit voltage be 1.5V, conversion efficiency be 4.70%.
Embodiment 3, making substrate layer is PET flexible substrate, and gold electrode thickness is 90 nanometers, and passivation layer is silicon nitride and thickness
Degree is 8 nanometers, and n-type cadmium sulphide membrane thickness is 80 nanometers, and Ti electrode thickness is the big open-circuit voltage nano heterojunction of 35 nanometers
Solaode.
With reference to Fig. 3, the making step of the present embodiment is as follows:
1) by a diameter of 150-250 nanometer, a length of 15-25 micron, hole concentration is 1018-1019cm-3P-type selenizing
Zinc nano wire is transferred on substrate layer, and p-type ZnSe nano wire is arranged in horizontal array on substrate layer, parallel of nano wire
It is divided into 1-5 micron；
2) it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type quasiconductor receive by exposed and developed
Rice noodle one end is exposed, then is positioned in magnetic control sputtering device by this substrate layer, on one end that p-type ZnSe nano wire is exposed
Deposit thickness is the gold electrode of 90 nanometers, is finally positioned in acetone solvent by described substrate layer, makes photoresist dissolve, obtains
One end deposition has the p-type ZnSe nano wire of gold electrode；
3) again it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type selenizing by exposed and developed
The other end of zinc nano wire is exposed, is then positioned in atomic layer deposition apparatus by this substrate layer, at p-type ZnSe nano wire
On exposed one end, deposit thickness is the silicon nitride passivation of 8 nanometers；
4) atomic layer deposition method depositing n-type cadmium sulphide membrane on passivation layer is used:
4a) step 3) in substrate layer be positioned in the reaction chamber of ald, confined reaction chamber by intracavity pressure
Power is evacuated to less than 10-4Pa, and heat make cavity inner temperature remain 130 DEG C；
4b) with thioacetamide (H3CCSNH2) powder and liquid dimethyl base cadmium Cd (CH3)2For presoma, with nitrogen for carrying
Gas and purification gas, and use heating mantle that thioacetamide is heated to 110 DEG C；
4c) it is passed through thioacetamide presoma, forms first monolayer of S on silicon nitride passivation surface；Then pass to nitrogen
Remaining presoma and nitrogen is walked by mechanical pump extraction after gas flushing；
4d) it is passed through dimethyl cadmium, the first monolayer mentioned above is formed second monolayer of Cd, the first monolayer and second
Monolayer forms S-Cd key；It is passed through after nitrogen rinses and is taken away remaining presoma and nitrogen by mechanical pump；
4e) it is repeated in step 4c) and 4d), number of repetition is 1200 times, completes the n-type cadmium sulfide that thickness is 80 nanometers
The deposition of thin film；
5) by step 4) in substrate layer be positioned in magnetic control sputtering device, on n-type cadmium sulphide membrane, deposit thickness is
The Ti electrode of 35 nanometers；
6) by step 5) in substrate layer be positioned in acetone solvent, make photoresist dissolve；
7) by step 6) in substrate layer be positioned in quick anneal oven, cavity pressure is also evacuated to less than 10 by airtight furnace chamber- 3Pa, is rapidly heated to 300 DEG C, completes short annealing, and wherein, fast ramp up time is 60 seconds, and annealing temperature is 300 DEG C, annealing
Time is 4 minutes.
After completing the preparation of the above-mentioned nano heterogeneous joint solar cell of big open-circuit voltage, it is surveyed under standard analog light source
Examination can obtain its open-circuit voltage be 1.05V, conversion efficiency be 3.40%.
Claims (10)
1. the nano heterogeneous joint solar cell of big open-circuit voltage, it is characterised in that: include substrate layer (1), described substrate layer
(1) it is provided with p-type semiconductor nanowires (2) on, on one end of described p-type semiconductor nanowires (2), is provided with gold electrode
(3), being provided with passivation layer (4) on the other end of described p-type semiconductor nanowires (2), described passivation layer is provided with n-on (4)
Type semiconductive thin film (5), is provided with Ti electrode (6) on described n-type semiconductive thin film (5).
2. according to a kind of big nano heterogeneous joint solar cell of open-circuit voltage described in claims 1, it is characterised in that: described
Substrate layer (1) is quartz glass, silicon chip, Sapphire Substrate or PET (Polyethylene with oxide layer
Terephthalate, polyethylene terephthalate) flexible substrate.
3. according to a kind of big nano heterogeneous joint solar cell of open-circuit voltage described in claims 1, it is characterised in that: described
P-type semiconductor nanowires (2) be p-type zinc selenide (ZnSe) nano wire；The diameter of described p-type semiconductor nanowires (2)
For 150-250 nanometer, a length of 15-25 micron, hole concentration is 1018-1019cm-3；Described p-type semiconductor nanowires (2)
Arranging in horizontal array on substrate layer (1), p-type semiconductor nanowires parallel interval is 1-5 micron.
4. according to a kind of big nano heterogeneous joint solar cell of open-circuit voltage described in claims 1, it is characterised in that: described
Gold electrode (3) thickness is 50-100 nanometer.
5. according to a kind of big nano heterogeneous joint solar cell of open-circuit voltage described in claims 1, it is characterised in that: described
Passivation layer (4) is silicon nitride (Si3N4) or aluminium oxide (Al2O3) layer；Described passivation layer (4) thickness is 4-8 nanometer；Described passivation
One end of p-type semiconductor nanowires (2) is uniformly wrapped up by layer (4).
6. according to a kind of big nano heterogeneous joint solar cell of open-circuit voltage described in claims 1, it is characterised in that: described
N-type semiconductive thin film (5) is n-type cadmium sulfide (CdS) thin film；The thickness of described n-type semiconductive thin film (5) is that 40-100 receives
Rice.
7. according to a kind of big nano heterogeneous joint solar cell of open-circuit voltage described in claims 1, it is characterised in that: described
The thickness of Ti electrode (6) is 20-40 nanometer.
8. a preparation method for the nano heterogeneous joint solar cell of big open-circuit voltage, comprises the steps:
1) p-type semiconductor nanowires is transferred on substrate layer, is allowed to arrange in horizontal array；
2) it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type semiconductor nanowires by exposed and developed
One end is exposed, then is positioned in magnetic control sputtering device by this substrate layer, deposits on one end that p-type semiconductor nanowires is exposed
Gold electrode, is finally positioned over described substrate layer in acetone solvent, makes photoresist dissolve, and obtaining one end deposition has gold electrode
P-type semiconductor nanowires；
3) again it is positioned in litho machine after substrate layer surface smear photoresist, makes p-type quasiconductor receive by exposed and developed
The other end of rice noodle is exposed, is then positioned in atomic layer deposition apparatus by this substrate layer, exposed at p-type semiconductor nanowires
One end on deposit passivation layer；
4) atomic layer deposition method depositing n-type semiconductive thin film on passivation layer is used:
4a) step 3) in substrate layer be positioned in the reaction chamber of ald, cavity pressure is also taken out by confined reaction chamber
To less than 10-4Pa, and heat make cavity inner temperature remain 130 DEG C；
4b) with thioacetamide (H3CCSNH2) powder and liquid dimethyl base cadmium Cd (CH3)2For presoma, nitrogen buffer gas and
Purify gas, and use heating mantle that thioacetamide is heated to 110 DEG C；
4c) it is passed through thioacetamide presoma, forms first monolayer of S in passivation layer surface；Then pass to nitrogen rinse after by
Remaining presoma and nitrogen are walked in mechanical pump extraction；
4d) it is passed through dimethyl cadmium, the first monolayer mentioned above is formed second monolayer of Cd, the first monolayer and the second monolayer
Form S-Cd key；It is passed through after nitrogen rinses and is walked remaining presoma and nitrogen by mechanical pump extraction；
4e) it is repeated in step 4c) and 4d), complete the deposition of n-type semiconductive thin film；
5) by step 4) in substrate layer be positioned in magnetic control sputtering device, titanium deposition electrode on n-type semiconductive thin film；
6) by step 5) in substrate layer be positioned in acetone solvent, make photoresist dissolve；
7) by step 6) in substrate layer be positioned in quick anneal oven, cavity pressure is also evacuated to less than 10 by airtight furnace chamber-3Pa, soon
Speed is warming up to 300-400 DEG C, completes short annealing.
The preparation method of a kind of nano heterogeneous joint solar cell of big open-circuit voltage the most as claimed in claim 8, its feature exists
In step 4e) described in be repeated in step 4c) and number of times 4d) be 600-1500 time.
The preparation method of a kind of nano heterogeneous joint solar cell of big open-circuit voltage the most as claimed in claim 8, its feature exists
In step 7) described in fast ramp up time be the 60-120 second, annealing temperature is 300-400 DEG C, and annealing time is 3-6 minute.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447925A (en) * | 2018-04-27 | 2018-08-24 | 安阳师范学院 | Flexible heterojunction solar battery array based on horizontal arrangement nano wire film and preparation method thereof |
| CN109411357A (en) * | 2018-10-26 | 2019-03-01 | 郑州大学 | A kind of P-N hetero-junctions and preparation method thereof of nickel oxide nanowires and zinc oxide composition |
| CN109545869A (en) * | 2018-10-24 | 2019-03-29 | 四川大学 | A kind of flexible cadmium telluride solar cell of two-sided three terminal |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060145190A1 (en) * | 2004-12-31 | 2006-07-06 | Salzman David B | Surface passivation for III-V compound semiconductors |
| KR100847741B1 (en) * | 2007-02-21 | 2008-07-23 | 고려대학교 산학협력단 | Point-contacted heterojunction silicon solar cell having passivation layer between the interface of p-n junction and method for fabricating the same |
| CN102034902A (en) * | 2010-11-03 | 2011-04-27 | 上海大学 | Method for preparing silicon-based SIS heterojunction photoelectric device |
| US20110139249A1 (en) * | 2009-12-10 | 2011-06-16 | Uriel Solar Inc. | High Power Efficiency Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures for Use in Solar Electricity Generation |
| CN102640301A (en) * | 2009-12-07 | 2012-08-15 | 应用材料公司 | Method of cleaning and forming a negatively charged passivation layer over a doped region |
| EP2534697A2 (en) * | 2010-02-09 | 2012-12-19 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH | Back contact solar cell having an unstructured absorber layer |
| CN102938429A (en) * | 2012-12-21 | 2013-02-20 | 国电光伏(江苏)有限公司 | Antireflection heterojunction solar cell and preparation method thereof |
| CN103258970A (en) * | 2012-09-19 | 2013-08-21 | 苏州大学 | Method for preparing core-shell organic/cadmium sulfide nanowire heterojunction arrays |
| US20130240348A1 (en) * | 2009-11-30 | 2013-09-19 | The Royal Institution For The Advancement Of Learning / Mcgill University | High Efficiency Broadband Semiconductor Nanowire Devices |
| US20140026937A1 (en) * | 2011-04-11 | 2014-01-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Semiconductor Heterostructure and Photovoltaic Cell Including Such A Heterostructure |
| CN103956391A (en) * | 2014-04-11 | 2014-07-30 | 中国科学院宁波材料技术与工程研究所 | AZO/Si heterojunction solar battery and manufacturing method thereof |
| WO2015088320A1 (en) * | 2013-12-09 | 2015-06-18 | Mimos Berhad | Process of texturing silicon surface for optimal sunlight capture in solar cells |
| CN104952703A (en) * | 2015-05-20 | 2015-09-30 | 安阳师范学院 | Production method of IIB-VIB semiconductor/CdS nano P-N junction |
| KR101626248B1 (en) * | 2015-01-09 | 2016-05-31 | 고려대학교 산학협력단 | Silicon solar cell and method of manufacturing the same |
-
2016
- 2016-07-05 CN CN201610543913.7A patent/CN106057931B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060145190A1 (en) * | 2004-12-31 | 2006-07-06 | Salzman David B | Surface passivation for III-V compound semiconductors |
| KR100847741B1 (en) * | 2007-02-21 | 2008-07-23 | 고려대학교 산학협력단 | Point-contacted heterojunction silicon solar cell having passivation layer between the interface of p-n junction and method for fabricating the same |
| US20130240348A1 (en) * | 2009-11-30 | 2013-09-19 | The Royal Institution For The Advancement Of Learning / Mcgill University | High Efficiency Broadband Semiconductor Nanowire Devices |
| CN102640301A (en) * | 2009-12-07 | 2012-08-15 | 应用材料公司 | Method of cleaning and forming a negatively charged passivation layer over a doped region |
| US20110139249A1 (en) * | 2009-12-10 | 2011-06-16 | Uriel Solar Inc. | High Power Efficiency Polycrystalline CdTe Thin Film Semiconductor Photovoltaic Cell Structures for Use in Solar Electricity Generation |
| EP2534697A2 (en) * | 2010-02-09 | 2012-12-19 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH | Back contact solar cell having an unstructured absorber layer |
| CN102034902A (en) * | 2010-11-03 | 2011-04-27 | 上海大学 | Method for preparing silicon-based SIS heterojunction photoelectric device |
| US20140026937A1 (en) * | 2011-04-11 | 2014-01-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Semiconductor Heterostructure and Photovoltaic Cell Including Such A Heterostructure |
| CN103258970A (en) * | 2012-09-19 | 2013-08-21 | 苏州大学 | Method for preparing core-shell organic/cadmium sulfide nanowire heterojunction arrays |
| CN102938429A (en) * | 2012-12-21 | 2013-02-20 | 国电光伏(江苏)有限公司 | Antireflection heterojunction solar cell and preparation method thereof |
| WO2015088320A1 (en) * | 2013-12-09 | 2015-06-18 | Mimos Berhad | Process of texturing silicon surface for optimal sunlight capture in solar cells |
| CN103956391A (en) * | 2014-04-11 | 2014-07-30 | 中国科学院宁波材料技术与工程研究所 | AZO/Si heterojunction solar battery and manufacturing method thereof |
| KR101626248B1 (en) * | 2015-01-09 | 2016-05-31 | 고려대학교 산학협력단 | Silicon solar cell and method of manufacturing the same |
| CN104952703A (en) * | 2015-05-20 | 2015-09-30 | 安阳师范学院 | Production method of IIB-VIB semiconductor/CdS nano P-N junction |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447925A (en) * | 2018-04-27 | 2018-08-24 | 安阳师范学院 | Flexible heterojunction solar battery array based on horizontal arrangement nano wire film and preparation method thereof |
| CN108447925B (en) * | 2018-04-27 | 2024-01-30 | 安阳师范学院 | Flexible heterojunction solar cell array based on horizontally arranged nanowire films and preparation method thereof |
| CN109545869A (en) * | 2018-10-24 | 2019-03-29 | 四川大学 | A kind of flexible cadmium telluride solar cell of two-sided three terminal |
| CN109411357A (en) * | 2018-10-26 | 2019-03-01 | 郑州大学 | A kind of P-N hetero-junctions and preparation method thereof of nickel oxide nanowires and zinc oxide composition |
| CN109411357B (en) * | 2018-10-26 | 2020-08-07 | 郑州大学 | P-N heterojunction composed of nickel oxide nanowire and zinc oxide and preparation method thereof |
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|---|---|
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