CN106057781A - 静电放电保护器件的制造方法 - Google Patents
静电放电保护器件的制造方法 Download PDFInfo
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- CN106057781A CN106057781A CN201610364672.XA CN201610364672A CN106057781A CN 106057781 A CN106057781 A CN 106057781A CN 201610364672 A CN201610364672 A CN 201610364672A CN 106057781 A CN106057781 A CN 106057781A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000010410 layer Substances 0.000 claims description 139
- 239000011229 interlayer Substances 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 14
- 230000001012 protector Effects 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 45
- 150000002500 ions Chemical class 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
ESD保护器件 | 设计电容值(pF) | 产品电容值(pF) |
器件A | 0.34 | 0.92 |
器件B | 0.33 | 1.84 |
器件C | 0.32 | 1 |
器件D | 0.29 | 0.77 |
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610364672.XA CN106057781B (zh) | 2016-05-27 | 2016-05-27 | 静电放电保护器件的制造方法 |
US15/606,976 US9929137B2 (en) | 2016-05-27 | 2017-05-26 | Method for manufacturing ESD protection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610364672.XA CN106057781B (zh) | 2016-05-27 | 2016-05-27 | 静电放电保护器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN106057781A true CN106057781A (zh) | 2016-10-26 |
CN106057781B CN106057781B (zh) | 2019-02-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610364672.XA Active CN106057781B (zh) | 2016-05-27 | 2016-05-27 | 静电放电保护器件的制造方法 |
Country Status (2)
Country | Link |
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US (1) | US9929137B2 (zh) |
CN (1) | CN106057781B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10037987B2 (en) | 2016-08-11 | 2018-07-31 | Silergy Semiconductor Technology (Hangzhou) Ltd. | Semiconductor structure of ESD protection device and method for manufacturing the same |
US10128227B2 (en) | 2016-08-15 | 2018-11-13 | Silergy Semiconductor Technology (Hangzhou) Ltd. | ESD protection device and method for manufacturing the same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789332B (zh) * | 2016-04-25 | 2019-02-26 | 矽力杰半导体技术(杭州)有限公司 | 整流器件、整流器件的制造方法及esd保护器件 |
US10535648B2 (en) * | 2017-08-23 | 2020-01-14 | Semiconductor Components Industries, Llc | TVS semiconductor device and method therefor |
US10930637B2 (en) * | 2018-09-06 | 2021-02-23 | Amazing Microelectronic Corp. | Transient voltage suppressor |
CN111540711B (zh) * | 2020-05-09 | 2024-05-14 | 捷捷半导体有限公司 | 制造单向负阻esd保护器件的方法及单向负阻esd保护器件 |
US11349017B2 (en) * | 2020-06-23 | 2022-05-31 | Amazing Microelectronic Corp. | Bidirectional electrostatic discharge (ESD) protection device |
US11508853B2 (en) * | 2020-07-28 | 2022-11-22 | Amazing Microelectronic Corp. | Vertical bipolar transistor device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6112085A (ja) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | 化合物半導体装置の保護ダイオ−ド |
JPS6112083A (ja) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | 化合物半導体装置の保護ダイオ−ド |
US20050212052A1 (en) * | 2004-03-25 | 2005-09-29 | Microchip Technology Incorporated | High voltage ESD-protection structure |
CN100452433C (zh) * | 2005-08-09 | 2009-01-14 | 台湾积体电路制造股份有限公司 | 半导体装置及高压p型金属氧化物半导体装置 |
CN102034806A (zh) * | 2009-09-24 | 2011-04-27 | 新唐科技股份有限公司 | 静电放电防护装置及其中的静电放电防护元件 |
CN103077942A (zh) * | 2011-09-27 | 2013-05-01 | 半导体元件工业有限责任公司 | 半导体装置 |
TW201320295A (zh) * | 2011-09-27 | 2013-05-16 | Semiconductor Components Ind | 半導體裝置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7968936B2 (en) * | 2007-12-31 | 2011-06-28 | Texas Instruments Incorporated | Quasi-vertical gated NPN-PNP ESD protection device |
US7977769B2 (en) * | 2009-05-20 | 2011-07-12 | United Microelectronics Corp. | ESD protection device |
CN106229314B (zh) | 2016-08-15 | 2020-01-24 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件及其制造方法 |
-
2016
- 2016-05-27 CN CN201610364672.XA patent/CN106057781B/zh active Active
-
2017
- 2017-05-26 US US15/606,976 patent/US9929137B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6112085A (ja) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | 化合物半導体装置の保護ダイオ−ド |
JPS6112083A (ja) * | 1984-06-26 | 1986-01-20 | Sanyo Electric Co Ltd | 化合物半導体装置の保護ダイオ−ド |
US20050212052A1 (en) * | 2004-03-25 | 2005-09-29 | Microchip Technology Incorporated | High voltage ESD-protection structure |
CN100452433C (zh) * | 2005-08-09 | 2009-01-14 | 台湾积体电路制造股份有限公司 | 半导体装置及高压p型金属氧化物半导体装置 |
CN102034806A (zh) * | 2009-09-24 | 2011-04-27 | 新唐科技股份有限公司 | 静电放电防护装置及其中的静电放电防护元件 |
CN103077942A (zh) * | 2011-09-27 | 2013-05-01 | 半导体元件工业有限责任公司 | 半导体装置 |
TW201320295A (zh) * | 2011-09-27 | 2013-05-16 | Semiconductor Components Ind | 半導體裝置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10037987B2 (en) | 2016-08-11 | 2018-07-31 | Silergy Semiconductor Technology (Hangzhou) Ltd. | Semiconductor structure of ESD protection device and method for manufacturing the same |
US10128227B2 (en) | 2016-08-15 | 2018-11-13 | Silergy Semiconductor Technology (Hangzhou) Ltd. | ESD protection device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20170345811A1 (en) | 2017-11-30 |
US9929137B2 (en) | 2018-03-27 |
CN106057781B (zh) | 2019-02-15 |
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Effective date of registration: 20200306 Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Patentee after: Silergy Semiconductor Technology (Hangzhou) Ltd. Address before: 310012 Wensanlu Road, Hangzhou Province, No. 90 East Software Park, science and technology building A1501 Patentee before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
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Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Patentee after: Nanjing Sili Microelectronics Technology Co., Ltd Address before: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Patentee before: Silergy Semiconductor Technology (Hangzhou) Ltd. |