CN106041728A - 薄板状工件的制造方法以及双头平面磨削装置 - Google Patents
薄板状工件的制造方法以及双头平面磨削装置 Download PDFInfo
- Publication number
- CN106041728A CN106041728A CN201610182159.9A CN201610182159A CN106041728A CN 106041728 A CN106041728 A CN 106041728A CN 201610182159 A CN201610182159 A CN 201610182159A CN 106041728 A CN106041728 A CN 106041728A
- Authority
- CN
- China
- Prior art keywords
- grinding
- workpiece
- state
- hydrostatic
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 242
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000002706 hydrostatic effect Effects 0.000 claims description 125
- 238000000034 method Methods 0.000 claims description 31
- 238000001514 detection method Methods 0.000 claims description 14
- 230000029052 metamorphosis Effects 0.000 claims description 5
- 230000000877 morphologic effect Effects 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims 1
- 230000003068 static effect Effects 0.000 abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000005452 bending Methods 0.000 description 9
- 230000007115 recruitment Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078531A JP6383700B2 (ja) | 2015-04-07 | 2015-04-07 | 薄板状ワークの製造方法及び両頭平面研削装置 |
JP2015-078531 | 2015-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106041728A true CN106041728A (zh) | 2016-10-26 |
CN106041728B CN106041728B (zh) | 2020-02-07 |
Family
ID=57250367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610182159.9A Active CN106041728B (zh) | 2015-04-07 | 2016-03-28 | 薄板状工件的制造方法以及双头平面磨削装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6383700B2 (zh) |
KR (1) | KR102499588B1 (zh) |
CN (1) | CN106041728B (zh) |
TW (1) | TWI678262B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111283548A (zh) * | 2018-12-07 | 2020-06-16 | 株式会社迪思科 | 圆板状工件的加工方法 |
CN115723035A (zh) * | 2022-09-08 | 2023-03-03 | 西安奕斯伟材料科技有限公司 | 用于监控研磨装置的加工状态的***、方法及双面研磨装置 |
CN117226707A (zh) * | 2023-11-10 | 2023-12-15 | 西安奕斯伟材料科技股份有限公司 | 驱动环、承载装置及双面研磨装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115319639A (zh) * | 2022-09-22 | 2022-11-11 | 西安奕斯伟材料科技有限公司 | 研磨装置、研磨方法及硅片 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1176163A (zh) * | 1996-09-09 | 1998-03-18 | 光洋机械工业株式会社 | 薄板圆盘形工件的两面磨削装置 |
JP2002064073A (ja) * | 2001-06-12 | 2002-02-28 | Komatsu Electronic Metals Co Ltd | 半導体ウェーハ剥し装置および半導体ウェーハの製造方法 |
JP2003236746A (ja) * | 2002-02-14 | 2003-08-26 | Sumitomo Heavy Ind Ltd | ワーク研削装置 |
CN1905990A (zh) * | 2004-01-22 | 2007-01-31 | 光洋机械工业株式会社 | 双头平面磨削装置 |
US20100144248A1 (en) * | 2008-10-31 | 2010-06-10 | Sumco Techxiv Corporation | Double-side grinding apparatus for wafer and double-side grinding method |
CN101939136A (zh) * | 2008-02-14 | 2011-01-05 | 信越半导体股份有限公司 | 工件的双面磨削装置及工件的双面磨削方法 |
TW201402271A (zh) * | 2012-04-05 | 2014-01-16 | Koyo Machine Ind Co Ltd | 在兩頭平面研磨的工件搬入出方法及兩頭平面研磨盤 |
JP2014104515A (ja) * | 2012-11-23 | 2014-06-09 | Koyo Mach Ind Co Ltd | 両面研削装置における静圧パッドの熱変形防止装置および両面研削装置 |
CN104253072A (zh) * | 2013-06-28 | 2014-12-31 | 株式会社荏原制作所 | 基板处理装置 |
CN104411455A (zh) * | 2012-07-03 | 2015-03-11 | 信越半导体股份有限公司 | 双面磨削装置及工件的双面磨削方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS55125761U (zh) * | 1979-02-24 | 1980-09-05 | ||
JPH10264024A (ja) * | 1997-01-23 | 1998-10-06 | Nippon Seiko Kk | 砥石アンバランス測定方法 |
JPH11114792A (ja) * | 1997-10-07 | 1999-04-27 | Canon Inc | 研磨装置 |
JP2005238444A (ja) * | 1999-05-07 | 2005-09-08 | Shin Etsu Handotai Co Ltd | 両面同時研削方法および両面同時研削盤並びに両面同時ラップ方法および両面同時ラップ盤 |
JP2002307303A (ja) * | 2001-04-10 | 2002-10-23 | Koyo Mach Ind Co Ltd | 薄板円板状ワークの両面研削方法および装置 |
US7662023B2 (en) * | 2006-01-30 | 2010-02-16 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
JP5851803B2 (ja) * | 2011-03-18 | 2016-02-03 | 光洋機械工業株式会社 | 薄板状ワークの研削方法及び両頭平面研削盤 |
JP5614397B2 (ja) * | 2011-11-07 | 2014-10-29 | 信越半導体株式会社 | 両面研磨方法 |
JP5820329B2 (ja) * | 2012-04-24 | 2015-11-24 | 光洋機械工業株式会社 | 両頭平面研削法及び両頭平面研削盤 |
-
2015
- 2015-04-07 JP JP2015078531A patent/JP6383700B2/ja active Active
-
2016
- 2016-03-28 CN CN201610182159.9A patent/CN106041728B/zh active Active
- 2016-03-30 TW TW105110045A patent/TWI678262B/zh active
- 2016-04-06 KR KR1020160042115A patent/KR102499588B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1176163A (zh) * | 1996-09-09 | 1998-03-18 | 光洋机械工业株式会社 | 薄板圆盘形工件的两面磨削装置 |
JP2002064073A (ja) * | 2001-06-12 | 2002-02-28 | Komatsu Electronic Metals Co Ltd | 半導体ウェーハ剥し装置および半導体ウェーハの製造方法 |
JP2003236746A (ja) * | 2002-02-14 | 2003-08-26 | Sumitomo Heavy Ind Ltd | ワーク研削装置 |
CN1905990A (zh) * | 2004-01-22 | 2007-01-31 | 光洋机械工业株式会社 | 双头平面磨削装置 |
CN101939136A (zh) * | 2008-02-14 | 2011-01-05 | 信越半导体股份有限公司 | 工件的双面磨削装置及工件的双面磨削方法 |
US20100144248A1 (en) * | 2008-10-31 | 2010-06-10 | Sumco Techxiv Corporation | Double-side grinding apparatus for wafer and double-side grinding method |
TW201402271A (zh) * | 2012-04-05 | 2014-01-16 | Koyo Machine Ind Co Ltd | 在兩頭平面研磨的工件搬入出方法及兩頭平面研磨盤 |
CN104411455A (zh) * | 2012-07-03 | 2015-03-11 | 信越半导体股份有限公司 | 双面磨削装置及工件的双面磨削方法 |
JP2014104515A (ja) * | 2012-11-23 | 2014-06-09 | Koyo Mach Ind Co Ltd | 両面研削装置における静圧パッドの熱変形防止装置および両面研削装置 |
CN104253072A (zh) * | 2013-06-28 | 2014-12-31 | 株式会社荏原制作所 | 基板处理装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111283548A (zh) * | 2018-12-07 | 2020-06-16 | 株式会社迪思科 | 圆板状工件的加工方法 |
CN115723035A (zh) * | 2022-09-08 | 2023-03-03 | 西安奕斯伟材料科技有限公司 | 用于监控研磨装置的加工状态的***、方法及双面研磨装置 |
CN115723035B (zh) * | 2022-09-08 | 2024-05-28 | 西安奕斯伟材料科技股份有限公司 | 用于监控研磨装置的加工状态的***、方法及双面研磨装置 |
CN117226707A (zh) * | 2023-11-10 | 2023-12-15 | 西安奕斯伟材料科技股份有限公司 | 驱动环、承载装置及双面研磨装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102499588B1 (ko) | 2023-02-15 |
CN106041728B (zh) | 2020-02-07 |
KR20160120237A (ko) | 2016-10-17 |
TWI678262B (zh) | 2019-12-01 |
JP2016198826A (ja) | 2016-12-01 |
JP6383700B2 (ja) | 2018-08-29 |
TW201642999A (zh) | 2016-12-16 |
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CP01 | Change in the name or title of a patent holder |
Address after: South Osaka City eight Japan uematsu Cho 2 chome 34 GA Patentee after: JTEKT Mechanical System Co.,Ltd. Address before: South Osaka City eight Japan uematsu Cho 2 chome 34 GA Patentee before: KOYO MACHINE INDUSTRIES CO.,LTD. |
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CP01 | Change in the name or title of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Osaka, Japan Patentee after: JTEKT Mechanical System Co.,Ltd. Address before: South Osaka City eight Japan uematsu Cho 2 chome 34 GA Patentee before: JTEKT Mechanical System Co.,Ltd. |
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CP02 | Change in the address of a patent holder |