CN106033731A - 半导体元件及其制作方法 - Google Patents
半导体元件及其制作方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 160
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 10
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- -1 hafnium aluminum zinc Chemical compound 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 claims description 5
- IOKZQYBPJYHIIW-UHFFFAOYSA-N aluminum zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Al+3].[Sn+4].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2] IOKZQYBPJYHIIW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 5
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- OIJHATZRTIMFDE-UHFFFAOYSA-N [O-2].[Zn+2].[Hf+4].[Sn+4].[In+3] Chemical compound [O-2].[Zn+2].[Hf+4].[Sn+4].[In+3] OIJHATZRTIMFDE-UHFFFAOYSA-N 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011513 prestressed concrete Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JXLCNVMZIFBUAK-UHFFFAOYSA-N hafnium zinc Chemical compound [Zn].[Zn].[Hf] JXLCNVMZIFBUAK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/772—Field effect transistors
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Abstract
本发明公开一种半导体元件及其制作方法,该半导体元件包含一基底,一金属氧化物半导体晶体管设于基底上,以及一氧化物半导体晶体管邻近该金属氧化物半导体晶体管。其中金属氧化物半导体晶体管包含一第一栅极结构以及一源极/漏极区域设于第一栅极结构两侧,氧化物半导体晶体管则包含一通道层,且该通道层的上表面低于金属氧化物半导体晶体管的第一栅极结构的上表面。
Description
技术领域
本发明涉及一种制作半导体元件的方法,尤指一种形成氧化物半导体层之前或之后进行一紫外光臭氧脱氢(UV ozone dehydrogenation)制作工艺的方法。
背景技术
近期将半导体薄膜设于一具有绝缘表面的基底上以形成晶体管的技术普遍受到注目,其中该晶体管可应用于例如集成电路或影像显示元件等各种电子元件中。目前广泛用来制作半导体薄膜的材料通常包含以硅为基础的半导体材料,而其中又以氧化物半导体更受到各界注目。
一般而言,包含前述氧化物半导体薄膜的晶体管在电路呈现关闭状态(off state)时具有非常低的漏电流。然而,现今在整合具有氧化物半导体层的晶体管与一般具有金属栅极的金属氧化物半导体晶体管时仍遇到许多瓶颈,例如因制作流程过于复杂并造成成本增加等问题。因此如何改良现有包含氧化物半导体薄膜的晶体管元件的制作工艺即为现今一重要课题。
发明内容
本发明优选实施例公开一种制作半导体元件的方法。首先提供一基底,该基底上具有一底薄膜层,然后进行一第一紫外光处理,并形成一氧化物半导体层于该底薄膜层上,其中该氧化物半导体层是选自由氧化铟镓锌、氧化铟铝锌、氧化铟锡锌、氧化铟铝镓锌、氧化铟锡铝锌、氧化铟锡铪锌以及氧化铟铪铝锌所构成的群组。之后再进行一第二紫外光处理。
本发明另一实施例公开一种制作半导体元件的方法。首先提供一基底,该基底上具有一金属氧化物半导体晶体管,且该金属氧化物半导体晶体管包含一第一栅极结构以及一源极/漏极区域设于该第一栅极结构两侧,然后形成一氧化物半导体晶体管邻近该金属氧化物半导体晶体管,该氧化物半导体晶体管包含一通道层,且该通道层的上表面低于该金属氧化物半导体晶体管的该第一栅极结构的上表面。
本发明又一实施例是公开一种半导体元件,其包含一基底,一金属氧化物半导体晶体管设于基底上,以及一氧化物半导体晶体管邻近该金属氧化物半导体晶体管。其中金属氧化物半导体晶体管包含一第一栅极结构以及一源极/漏极区域设于第一栅极结构两侧,氧化物半导体晶体管则包含一通道层,且该通道层的上表面低于金属氧化物半导体晶体管的第一栅极结构的上表面。
附图说明
图1至图5为本发明优选实施例制作一半导体元件的方法示意图。
主要元件符号说明
12 基底 14 第一区域
16 第二区域 18 栅极结构
20 栅极介电层 22 栅极电极
24 间隙壁 26 源极/漏极区域
28 外延层 30 金属氧化物半导体晶体
管
32 接触洞蚀刻停止层 34 材料层
36 氧化物半导体层 38 源极层
40 漏极层 42 栅极绝缘层
44 栅极结构 46 氧化物半导体晶体管
48 层间介电层 50 接触插塞
52 通道层 54 浅沟隔离
具体实施方式
请参照图1至图5,图1至图5为本发明优选实施例制作一半导体元件的方法示意图。如图1所示,首先提供一基底12,基底12例如是硅基底、外延硅基底、碳化硅基底或硅覆绝缘(silicon-on-insulator,SOI)基底等的半导体基底,但不以此为限。在本实施例中,基底12上优选定义有一第一区域14与一第二区域16,其中第一区域14优选于后续制作工艺中制作一金属氧化物半导体晶体管而第二区域16则优选用来制备一氧化物半导体晶体管或薄膜晶体管。
依据本发明的一实施例,基底12中可选择性形成多个掺杂阱(未绘示)或多个作为电性隔离之用的浅沟隔离(shallow trench isolation,STI)54,另外本实施例虽以平面型晶体管为例,但在其他变化实施例中,本发明的半导体制作工艺也可应用于非平面晶体管,例如是鳍状晶体管(Fin-FET),此时,图1所标示的基底12即相对应代表为形成于一基底上的鳍状结构。
接着形成一栅极结构18于第一区域14的基底12上,栅极结构18的制作方式可依据制作工艺需求以先栅极(gate first)制作工艺、后栅极(gate last)制作工艺的先栅极介电层(high-k first)制作工艺以及后栅极制作工艺的后栅极介电层(high-k last)制作工艺等方式制作完成。以本实施例的先栅极制作工艺为例,可依序形成一栅极介电层、一栅极材料层、一选择性硬掩模(图未示)于基底12上,然后利用一图案化光致抗蚀剂(图未示)当作掩模进行一图案转移制作工艺,以单次蚀刻或逐次蚀刻步骤,去除部分的硬掩模、部分栅极材料层及部分栅极介质层,接着剥除图案化光致抗蚀剂,以于基底12上形成一由图案化的栅极介电层20与栅极电极22所构成的栅极结构18。之后可形成一由氧化硅或氮化硅所构成的材料层于基底12上并覆盖栅极结构18,然后进行一回蚀刻制作工艺去除部分材料层以形成一间隙壁24于栅极结构18两侧。接着于间隙壁24两侧的基底12中形成一源极/漏极区域26及/或外延层28,选择性于源极/漏极区域26及/或外延层28的表面形成一金属硅化物(图未示)。至此即于第一区域14形成一金属氧化物半导体晶体管30。
在本实施例中,栅极介电层20可包含二氧化硅(SiO2)、氮化硅(SiN)或高介电常数(high dielectric constant,high-k)材料;栅极电极22可包含金属材料、多晶硅或金属硅化物(silicide)等导电材料;栅极结构18上的硬掩模可选自由二氧化硅、氮化硅、碳化硅(SiC)或氮氧化硅(SiON)等所构成的群组,但不以此为限。
接着形成一底薄膜层(base film),例如一接触洞蚀刻停止层32覆盖基底12表面与栅极结构18,然后进行一第一紫外光处理,例如一紫外光臭氧脱氢(UV ozone dehydrogenation)制作工艺,以提升后续氧化物半导体层成长于接触洞蚀刻停止层32上的品质。
随后可先选择性沉积一由氧化铝(Al2O3)所构成的材料层34于接触洞蚀刻停止层32上,然后全面性覆盖一氧化物半导体层于氧化铝所构成的材料层34上,并利用一光刻暨蚀刻制作工艺去除部分氧化物半导体层,以于第二区域16的材料层34上形成一图案化的氧化物半导体层36,其中此氧化物半导体层36优选作为后续氧化物半导体晶体管的通道层。在本实施例中,接触洞蚀刻停止层32优选由氮化硅所构成,氧化物半导体层36优选选自由氧化铟镓锌、氧化铟铝锌、氧化铟锡锌、氧化铟铝镓锌、氧化铟锡铝锌、氧化铟锡铪锌以及氧化铟铪铝锌所构成的群组,但不局限于此。氧化物半导体形成后再进行一第二紫外光处理,例如另一道紫外光臭氧脱氢(UV ozonedehydrogenation)制作工艺,而此第二紫外光处理可实施于全面性覆盖未图案化的氧化物半导体层36之后且形成图案化的氧化物半导体层36之前或形成图案化的氧化物半导体层36之后。
然后如图2所示,以化学气相沉积(例如等离子体辅助化学气相沉积)或物理气相沉积(例如离子溅镀)全面性覆盖一导电层(图未示)于材料层34上并完全覆盖氧化物半导体层36。在本实施例中,导电层可选自由铝、铬、铜、钽、钼以及钨所构成的群组,但不局限于此。接着对导电层进行图案转移,例如可先形成一图案化光致抗蚀剂于导电层上,然后进行一蚀刻制作工艺去除部分未被图案化光致抗蚀剂所覆盖的导电层,以于氧化物半导体层36两侧的材料层34上及部分氧化物半导体层36表面形成一源极层38与一漏极层40。
随后如图3所示,形成一栅极绝缘层42于材料层34、源极层38、漏极层40及氧化物半导体层36上,其中栅极绝缘层42可选自由氧化硅、氮化硅、氮氧化硅以及碳氧化硅所构成的群组并可为单一材料层或多层材料层,但不局限于此。
之后如图4所示,可先全面沉积另一导电层(图未示)于栅极绝缘层42上,然后对导电层进行图案转移,例如可形成一图案化光致抗蚀剂于导电层上,并进行一蚀刻制作工艺去除部分未被图案化光致抗蚀剂所覆盖的导电层,以于栅极绝缘层42上形成一栅极结构44并同时于第二区域16形成一氧化物半导体晶体管46。在本实施例中,栅极结构44的材料可与源极层38或漏极层40相同或不同,例如可选自由铝、铬、铜、钽、钼以及钨所构成的群组,但不局限于此。
另外,本发明于形成源极层38及漏极层40后以及形成栅极结构44之前,又可选择性进行一第三紫外光处理,而形成栅极结构44后,也可再进行一第四紫外光处理,其中第三紫外光处理与第四紫外光处理均可包含一紫外光臭氧脱氢(UV ozone dehydrogenation)制作工艺,此实施例也属本发明所涵盖的范围。
随后如图5所示,形成一层间介电层48于栅极绝缘层42上并完全覆盖栅极结构44,接着形成多个接触插塞50于该层间介电层48、栅极绝缘层42、材料层34以及接触洞蚀刻停止层32中以电连接第二区域16中氧化物半导体晶体管46的栅极结构44、源极层38与漏极层40以及第一区域14中金属氧化物半导体晶体管30的源极/漏极区域26。至此即完成本发明优选实施例的一半导体元件的制作。
请再参照图5,图5为本发明优选实施例的一种半导体元件的结构示意图。如图中所示,半导体元件主要包含一基底12、一金属氧化物半导体晶体管30设于基底12上、一接触洞蚀刻停止层32设于金属氧化物半导体晶体管30与基底12上以及一氧化物半导体晶体管46设于邻近金属氧化物半导体晶体管30的接触洞蚀刻停止层32上并同时位于浅沟隔离(STI)54上。其中金属氧化物半导体晶体管30包含一栅极结构18以及一源极/漏极区域26设于栅极结构18两侧,氧化物半导体晶体管46则包含一通道层52(亦即前述的氧化物半导体层36)、一源极层38与一漏极层40设于接触洞蚀刻停止层32及部分通道层52上、一栅极结构44设于通道层52正上方以及一栅极绝缘层42设于栅极结构44与源极层38、漏极层40以及通道层52之间并覆盖接触洞蚀刻停止层32。
在本实施例中,通道层52的上表面优选低于金属氧化物半导体晶体管30的栅极结构18上表面,通道层52的底表面则高于金属氧化物半导体晶体管30的栅极结构18底表面,且通道层52是选自由氧化铟镓锌、氧化铟铝锌、氧化铟锡锌、氧化铟铝镓锌、氧化铟锡铝锌、氧化铟锡铪锌以及氧化铟铪铝锌所构成的群组。另外本实施例的半导体元件另包含一层间介电层48同时覆盖第一区域14的金属氧化物半导体晶体管30及第二区域16的氧化物半导体晶体管46上并直接接触栅极绝缘层42及氧化物半导体晶体管46的栅极结构44。
综上所述,本发明主要于一底薄膜层上形成氧化物半导体层之前或之后进行一道紫外光处理,例如一紫外光臭氧脱氢制作工艺来提升氧化物半导体晶体管成长的品质。此外,本发明另一实施例优选于接触洞蚀刻停止层上直接形成一氧化物半导体晶体管或一薄膜晶体管,然后再将形成层间介电层使层间介电层可同时覆盖并接触金属氧化物半导体晶体管及氧化物半导体晶体管。
以上所述仅为本发明的优选实施例,凡依本发明权利要求所做的均等变化与修饰,都应属本发明的涵盖范围。
Claims (19)
1.一种制作半导体元件的方法,包含:
提供一基底,该基底上具有一底薄膜层;
进行一第一紫外光处理;
形成一氧化物半导体层于该底薄膜层上,其中该氧化物半导体层是选自由氧化铟镓锌、氧化铟铝锌、氧化铟锡锌、氧化铟铝镓锌、氧化铟锡铝锌、氧化铟锡铪锌以及氧化铟铪铝锌所构成的群组;以及
进行一第二紫外光处理。
2.如权利要求1所述的方法,另包含:
形成一金属氧化物半导体晶体管于该基底上;
形成该底薄膜层于该金属氧化物半导体晶体管及该基底上;
形成该氧化物半导体层于该底薄膜层上;
形成一源极层及一漏极层于该氧化物半导体层两侧的该底薄膜层上;以及
形成一栅极结构于该氧化物半导体层上。
3.如权利要求2所述的方法,其中该底薄膜层包含一接触洞蚀刻停止层。
4.如权利要求2所述的方法,另包含于形成该源极层及该漏极层后以及形成该栅极结构之前进行一第三紫外光处理。
5.如权利要求4所述的方法,另包含于形成该栅极结构后进行一第四紫外光处理。
6.如权利要求5所述的方法,其中各该第一紫外光处理、该第二紫外光处理、该第三紫外光处理及该第四紫外光处理包含一紫外光臭氧脱氢(UVozone dehydrogenation)制作工艺。
7.如权利要求1所述的方法,另包含于形成该栅极结构前形成一栅极氧化层于该底薄膜层、该源极层、该漏极层以及该氧化物半导体层上。
8.一种制作半导体元件的方法,包含:
提供一基底,该基底上具有一金属氧化物半导体晶体管,且该金属氧化物半导体晶体管包含一第一栅极结构以及一源极/漏极区域设于该第一栅极结构两侧;以及
形成一氧化物半导体晶体管邻近该金属氧化物半导体晶体管,该氧化物半导体晶体管包含一通道层,且该通道层的上表面低于该金属氧化物半导体晶体管的该第一栅极结构的上表面。
9.如权利要求8所述的方法,另包含:
形成一接触洞蚀刻停止层于该金属氧化物半导体晶体管及该基底上;
形成该通道层于该接触洞蚀刻停止层上;
形成一源极层以及一漏极层于该通道层两侧的该接触洞蚀刻停止层上;
形成一栅极绝缘层于该接触洞蚀刻停止层、该源极层、该漏极层及该通道层上;以及
形成一第二栅极结构于该通道层上。
10.如权利要求9所述的方法,另包含形成一层间介电层于该接触洞蚀刻停止层及该第二栅极结构上。
11.如权利要求10所述的方法,另包含形成多个接触插塞于该层间介电层、该栅极绝缘层以及该接触洞蚀刻停止层中以电连接该第二栅极结构、该源极层、该漏极层以及该金属氧化物半导体晶体管的该源极/漏极区域。
12.一种半导体元件,包含:
基底,该基底上具有一金属氧化物半导体晶体管,且该金属氧化物半导体晶体管包含一第一栅极结构以及一源极/漏极区域设于该第一栅极结构两侧;以及
氧化物半导体晶体管邻近该金属氧化物半导体晶体管,该氧化物半导体晶体管包含一通道层,且该通道层的上表面低于该金属氧化物半导体晶体管的该第一栅极结构的上表面。
13.如权利要求12所述的半导体元件,另包含一接触洞蚀刻停止层设于该金属氧化物半导体晶体管及该基底上。
14.如权利要求13所述的半导体元件,其中该通道层是设于该接触洞蚀刻停止层上。
15.如权利要求14所述的半导体元件,另包含:
源极层以及漏极层设于该接触洞蚀刻停止层及该通道层上;
栅极绝缘层,设于该接触洞蚀刻停止层、该源极层、该漏极层以及该通道层上;以及
第二栅极结构,设于该栅极绝缘层上。
16.如权利要求15所述的半导体元件,另包含层间介电层,设于该金属氧化物半导体晶体管及该栅极绝缘层上。
17.如权利要求16所述的半导体元件,另包含多个接触插塞,设于该层间介电层、该栅极绝缘层以及该接触洞蚀刻停止层中以电连接该第二栅极结构、该源极层、该漏极层以及该金属氧化物半导体晶体管的该源极/漏极区域。
18.如权利要求12所述的半导体元件,其中该通道层的底表面高于该金属氧化物半导体晶体管的该第一栅极结构的底表面。
19.如权利要求12所述的半导体元件,其中该通道层是选自由氧化铟镓锌、氧化铟铝锌、氧化铟锡锌、氧化铟铝镓锌、氧化铟锡铝锌、氧化铟锡铪锌以及氧化铟铪铝锌所构成的群组。
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US20060110867A1 (en) * | 2004-11-10 | 2006-05-25 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
KR20110009003A (ko) * | 2009-07-20 | 2011-01-27 | 네이셔널 치아오 텅 유니버시티 | 박막 트랜지스터 및 이의 구조의 제조 방법 |
US20110108706A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
CN103262250A (zh) * | 2010-12-08 | 2013-08-21 | 夏普株式会社 | 半导体装置和显示装置 |
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CN112993005A (zh) * | 2019-12-02 | 2021-06-18 | 联华电子股份有限公司 | 具有平台结构的半导体元件及其制作方法 |
CN112993005B (zh) * | 2019-12-02 | 2024-01-09 | 联华电子股份有限公司 | 具有平台结构的半导体元件及其制作方法 |
CN113594086A (zh) * | 2020-04-30 | 2021-11-02 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN113594086B (zh) * | 2020-04-30 | 2023-09-26 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
US11950513B2 (en) | 2020-04-30 | 2024-04-02 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
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US20160268311A1 (en) | 2016-09-15 |
US9490265B2 (en) | 2016-11-08 |
CN106033731B (zh) | 2019-11-05 |
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