CN105924871A - Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element - Google Patents
Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element Download PDFInfo
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- CN105924871A CN105924871A CN201610391574.5A CN201610391574A CN105924871A CN 105924871 A CN105924871 A CN 105924871A CN 201610391574 A CN201610391574 A CN 201610391574A CN 105924871 A CN105924871 A CN 105924871A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
Abstract
The invention discloses a preparation method of gas-sensitive slurry for a semiconductor gas-sensitive element. The preparation method comprises the following specific preparation steps: (1) mixing zinc oxide and titanium dioxide, putting an obtained mixture into a ball mill, adding an equal mass of pure water, taking out an obtained semi-product after ball milling and putting the semi-product into a vacuum baking oven for baking; (2) mixing prepared glass powder and a mixture treated in the step (1), then fully stirring and putting an obtained mixture I into the vacuum baking oven for baking; (3) uniformly putting a mixture treated in the step (2) into an organic loading material, uniformly mixing and stirring and carrying out airtight ultrasound treatment to obtain the gas-sensitive slurry. The preparation method disclosed by the invention has the benefits that with the adoption of a formula and process parameters, the design is reasonable; the prepared gas-sensitive slurry is uniform; the semiconductor gas-sensitive element prepared by using the gas-sensitive slurry is high in sensitivity and excellent in various performances.
Description
Technical field
The present invention relates to semiconductor element preparing technical field, the preparation method of a kind of semiconductor gas sensor air-sensitive slurry.
Background technology
Semiconductor gas sensor owing to having that highly sensitive, response time and recovery time be short, length in service life and low cost and other advantages, be widely used in detecting various harmful gas, fuel gas, industrial waste gas and environmental pollution gas.Gas sensor is that in detection ambiance, certain (or certain class) gas exists and the basis of content.Gas sensor performance is closely related with the kind of sensitive material, structure and processing technology.
When preparing semiconductor gas sensor, the preparation process of air-sensitive slurry is most important, directly affects the quality of gas sensor performance, but the air-sensitive slurry that mostly prepared by preparation method can not meet the requirement of device, and the gas sensor sensitivity prepared is relatively low.
Summary of the invention
It is an object of the invention to, for solving the problems of the prior art, disclose the preparation method of a kind of semiconductor gas sensor air-sensitive slurry.
For achieving the above object, the invention discloses the preparation method of a kind of semiconductor gas sensor air-sensitive slurry, key component and proportion be: zinc oxide 40%, titanium dioxide 30%, glass dust 5%, organic material containing 25%, and its concrete preparation process is:
(1) zinc oxide is mixed with titanium dioxide insert in ball mill, and the pure water of the quality such as addition, ball milling, after 5-7 hour, takes out to insert and dries 20-30 minute in vacuum drying oven, dries temperature and is set as 140-160 DEG C；
(2) being sufficiently stirred for after being mixed with the compound handled well in step (1) by the glass dust prepared, mixing time is 20-30 minute, then inserts baking 30-40 minute in vacuum drying oven, and baking temperature is set as 200-220 DEG C；
(3) uniformly putting in organic material containing by the compound handled well in step (2), after mixing is stirred 10-15 minute, then closed ultrasonic obtains air-sensitive slurry after 20-25 minute.
Wherein said glass dust component and mass percent be: zirconium oxide 60%, lead oxide 15%, silica 1 5%, molybdenum trioxide 10%.
Wherein said organic material containing component and mass percent be: butanoic acid butyl carbitol 87%, poly-methyl acrylate 9%, butyral resin 4%.
Advantages of the present invention and good effect be:
The inventive method uses formula, process parameters design reasonable, and the air-sensitive slurry prepared is uniform, and the semiconductor gas sensor sensitivity prepared with this air-sensitive slurry is high, and properties is excellent.
Detailed description of the invention
Specific embodiment one:
A kind of preparation method of semiconductor gas sensor air-sensitive slurry, key component and proportion be: zinc oxide 40%, titanium dioxide 30%, glass dust 5%, organic material containing 25%, and its concrete preparation process is:
(1) zinc oxide is mixed with titanium dioxide insert in ball mill, and the pure water of the quality such as addition, ball milling, after 5 hours, takes out to insert and dries 20 minutes in vacuum drying oven, dries temperature and is set as 140 DEG C；
(2) it is sufficiently stirred for after the glass dust prepared being mixed with the compound handled well in step (1), wherein glass dust component and mass percent are: zirconium oxide 60%, lead oxide 15%, silica 1 5%, molybdenum trioxide 10%, mixing time is 20 minutes, then inserts baking 30 minutes in vacuum drying oven, and baking temperature is set as 200 DEG C；
(3) compound handled well in step (2) is uniformly put in organic material containing, the most organic material containing component and mass percent be: butanoic acid butyl carbitol 87%, poly-methyl acrylate 9%, butyral resin 4%, after mixing stirring 10 minutes, then closed ultrasonic obtained air-sensitive slurry after 20 minutes.
Specific embodiment two:
A kind of preparation method of semiconductor gas sensor air-sensitive slurry, key component and proportion be: zinc oxide 40%, titanium dioxide 30%, glass dust 5%, organic material containing 25%, and its concrete preparation process is:
(1) zinc oxide is mixed with titanium dioxide insert in ball mill, and the pure water of the quality such as addition, ball milling, after 7 hours, takes out to insert and dries 30 minutes in vacuum drying oven, dries temperature and is set as 160 DEG C；
(2) it is sufficiently stirred for after the glass dust prepared being mixed with the compound handled well in step (1), wherein glass dust component and mass percent are: zirconium oxide 60%, lead oxide 15%, silica 1 5%, molybdenum trioxide 10%, mixing time is 30 minutes, then inserts baking 40 minutes in vacuum drying oven, and baking temperature is set as 220 DEG C；
(3) compound handled well in step (2) is uniformly put in organic material containing, the most organic material containing component and mass percent be: butanoic acid butyl carbitol 87%, poly-methyl acrylate 9%, butyral resin 4%, after mixing stirring 15 minutes, then closed ultrasonic obtained air-sensitive slurry after 25 minutes.
Specific embodiment three:
A kind of preparation method of semiconductor gas sensor air-sensitive slurry, key component and proportion be: zinc oxide 40%, titanium dioxide 30%, glass dust 5%, organic material containing 25%, and its concrete preparation process is:
(1) zinc oxide is mixed with titanium dioxide insert in ball mill, and the pure water of the quality such as addition, ball milling, after 6 hours, takes out to insert and dries 25 minutes in vacuum drying oven, dries temperature and is set as 150 DEG C；
(2) it is sufficiently stirred for after the glass dust prepared being mixed with the compound handled well in step (1), wherein glass dust component and mass percent are: zirconium oxide 60%, lead oxide 15%, silica 1 5%, molybdenum trioxide 10%, mixing time is 25 minutes, then inserts baking 35 minutes in vacuum drying oven, and baking temperature is set as 210 DEG C；
(3) compound handled well in step (2) is uniformly put in organic material containing, the most organic material containing component and mass percent be: butanoic acid butyl carbitol 87%, poly-methyl acrylate 9%, butyral resin 4%, after mixing stirring 13 minutes, then closed ultrasonic obtained air-sensitive slurry after 23 minutes.
The above; it is only the present invention preferably detailed description of the invention; but protection scope of the present invention is not limited thereto; any those familiar with the art is in the technical scope that the invention discloses; according to technical scheme and inventive concept equivalent or change in addition thereof, all should contain within protection scope of the present invention.
Claims (3)
1. a preparation method for semiconductor gas sensor air-sensitive slurry, key component and proportion are: zinc oxide 40%, titanium dioxide 30%, glass dust 5%, organic material containing 25%, and its concrete preparation process is:
(1) zinc oxide is mixed with titanium dioxide insert in ball mill, and the pure water of the quality such as addition, ball milling, after 5-7 hour, takes out to insert and dries 20-30 minute in vacuum drying oven, dries temperature and is set as 140-160 DEG C；
(2) being sufficiently stirred for after being mixed with the compound handled well in step (1) by the glass dust prepared, mixing time is 20-30 minute, then inserts baking 30-40 minute in vacuum drying oven, and baking temperature is set as 200-220 DEG C；
(3) uniformly putting in organic material containing by the compound handled well in step (2), after mixing is stirred 10-15 minute, then closed ultrasonic obtains air-sensitive slurry after 20-25 minute.
The preparation method of a kind of semiconductor gas sensor air-sensitive slurry the most according to claim 1, it is characterised in that: described glass dust component and mass percent be: zirconium oxide 60%, lead oxide 15%, silica 1 5%, molybdenum trioxide 10%.
The preparation method of a kind of semiconductor gas sensor air-sensitive slurry the most according to claim 1, it is characterised in that: described organic material containing component and mass percent be: butanoic acid butyl carbitol 87%, poly-methyl acrylate 9%, butyral resin 4%.
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| CN201610391574.5A CN105924871A (en) | 2016-06-06 | 2016-06-06 | Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111825853A (en) * | 2020-07-23 | 2020-10-27 | 崔恩密 | Composite slurry for doping in semiconductor industry and curing film-forming processing method |
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| CN1128351A (en) * | 1995-01-03 | 1996-08-07 | 中国有色金属工业总公司昆明贵金属研究所 | Ruthenium-base electrode pulp for gas sensor |
| CN1487287A (en) * | 2003-08-12 | 2004-04-07 | 山东师范大学 | Tio2-based animal food freshness measuring gas sensitive device and its making process |
| CN1645122A (en) * | 2005-01-19 | 2005-07-27 | 山东师范大学 | Air sensitive device and production of determining laminated animal food freshness |
| CN101149354A (en) * | 2007-10-26 | 2008-03-26 | 华中科技大学 | Gas sensitization array sensor and its manufacture method |
| CN101232049A (en) * | 2007-01-26 | 2008-07-30 | 中国科学院物理研究所 | Nanometer oxide porous membrane electrode and preparing method and application thereof |
| CN101256166A (en) * | 2008-04-16 | 2008-09-03 | 北京航空航天大学 | Method of preparing zinc oxide/titanium dioxide composite self-assembly thin film gas sensitive device |
| CN101811888A (en) * | 2010-04-23 | 2010-08-25 | 西安交通大学 | Method for preparing composite air-sensitive membrane of carbon nano tube embedded with oxide quantum dots |
| CN102353702A (en) * | 2011-07-22 | 2012-02-15 | 李学中 | Oxide semiconductor normal temperature oxygen sensor |
| CN102637467A (en) * | 2012-04-27 | 2012-08-15 | 苏州晶讯科技股份有限公司 | Conductive paste for front electrode of silicon crystal solar battery |
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-
2016
- 2016-06-06 CN CN201610391574.5A patent/CN105924871A/en active Pending
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| CN1128351A (en) * | 1995-01-03 | 1996-08-07 | 中国有色金属工业总公司昆明贵金属研究所 | Ruthenium-base electrode pulp for gas sensor |
| CN1487287A (en) * | 2003-08-12 | 2004-04-07 | 山东师范大学 | Tio2-based animal food freshness measuring gas sensitive device and its making process |
| CN1645122A (en) * | 2005-01-19 | 2005-07-27 | 山东师范大学 | Air sensitive device and production of determining laminated animal food freshness |
| CN101232049A (en) * | 2007-01-26 | 2008-07-30 | 中国科学院物理研究所 | Nanometer oxide porous membrane electrode and preparing method and application thereof |
| CN101149354A (en) * | 2007-10-26 | 2008-03-26 | 华中科技大学 | Gas sensitization array sensor and its manufacture method |
| CN101256166A (en) * | 2008-04-16 | 2008-09-03 | 北京航空航天大学 | Method of preparing zinc oxide/titanium dioxide composite self-assembly thin film gas sensitive device |
| CN101811888A (en) * | 2010-04-23 | 2010-08-25 | 西安交通大学 | Method for preparing composite air-sensitive membrane of carbon nano tube embedded with oxide quantum dots |
| CN102353702A (en) * | 2011-07-22 | 2012-02-15 | 李学中 | Oxide semiconductor normal temperature oxygen sensor |
| CN102637467A (en) * | 2012-04-27 | 2012-08-15 | 苏州晶讯科技股份有限公司 | Conductive paste for front electrode of silicon crystal solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111825853A (en) * | 2020-07-23 | 2020-10-27 | 崔恩密 | Composite slurry for doping in semiconductor industry and curing film-forming processing method |
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Application publication date: 20160907 |