CN105870307A - 一种低光衰紫光led及其制造方法 - Google Patents
一种低光衰紫光led及其制造方法 Download PDFInfo
- Publication number
- CN105870307A CN105870307A CN201610293879.2A CN201610293879A CN105870307A CN 105870307 A CN105870307 A CN 105870307A CN 201610293879 A CN201610293879 A CN 201610293879A CN 105870307 A CN105870307 A CN 105870307A
- Authority
- CN
- China
- Prior art keywords
- glue
- bowl
- guide pillar
- pole guide
- light chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 123
- 239000003822 epoxy resin Substances 0.000 claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 claims description 25
- 230000001070 adhesive effect Effects 0.000 claims description 25
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 229910000521 B alloy Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- UEHLZRCCIWVHBH-UHFFFAOYSA-N 2-cyclopropyl-2-methylcyclopropane-1-carboxylic acid Chemical compound C1CC1C1(C)CC1C(O)=O UEHLZRCCIWVHBH-UHFFFAOYSA-N 0.000 description 6
- 230000035939 shock Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种低光衰紫光LED及其制造方法,包括碗杯,所述碗杯的内底部通过固晶胶固定有一紫光芯片,所述紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接,在所述碗杯中填充内胶,所述碗杯外封装有一外胶;所述内胶为有机硅改性环氧树脂,其中AB胶比例为A胶10重量份,B胶6重量份;所述外胶为环氧树脂,其中AB胶比例为A胶100重量份,B胶100重量份。本发明中外胶和内胶组成成分大体一致,如此内胶和外胶的结合时,使得气泡及分层这一难题得到彻底解决。同时内胶和外胶膨胀系数较为一致,内应力基本消除,经100次冷热冲击,LED仍能正常工作,由于内胶组份进行硅改性,紫外光透光性及其光衰性能大幅提高。
Description
技术领域
本发明涉及LED生产技术领域,更具体地说是一种低光衰紫光LED及其制造方法。
背景技术
现有技术中,紫光LED的UVA波段(365~415nm)进行直插式封装时,采用以下两种方法:(1)第一种,采用环氧树脂直接封装,封装后灯杯被环氧树脂填充,其不足之处是紫外光会破坏环氧树脂,造成紫外光透过性差,使用一段时间后,紫外光功率下降很多,最终影响使用。
(2)第二种,采用灯杯内点硅胶,外封环氧树脂,紫外光功率有明显改善,但因为两种胶组份及其膨胀系数差异大,封装后极易产生气泡,并且内外胶分层及内应力大,造成可见光的一致性差,同时品质可靠性也下降,在进行波峰焊接加工作业时,死灯率较高。
发明内容
本发明的目的在于克服现有技术以上缺陷,提供一种既能提高紫外光透光性又能提高光衰稳定性的低光衰紫光LED及其制造方法。
为了达到以上目的,本发明是通过以下技术方案实现的:一种低光衰紫光LED,包括一上口大下底小的碗杯,以及一对正负电极导柱,所述正负电极导柱进一步包括正极导柱和负极导柱,所述负极导柱与所述碗杯直接相连,而所述正极导柱与所述碗杯间隔分离,其特征在于,所述碗杯的内底部通过固晶胶固定有一紫光芯片,所述固晶胶的高度为所述紫光芯片高度的1/3~1/2,所述紫光芯片通过一对键合金丝分别与所述正极导柱和负极导柱相连接,固定好所述紫光芯片后,在所述碗杯中填充内胶,所述内胶充满整个碗杯,所述碗杯外封装有一固化后呈子弹头形的外胶,其中所述正极导柱和负极导柱伸出所述外胶外;
所述固晶胶为硅胶[化学分子式为mSiO2·nH2O];
所述内胶为有机硅改性环氧树脂[化学分子式为(C8H12O2)n(C8H12O2)n(C8H12O2)nC6H14O3+Si-O],其中AB胶比例为A胶10重量份,B胶6重量份;
所述外胶为环氧树脂[化学分子式为(C8H12O2)n(C8H12O2)n(C8H12O2)nC6H14O3],其中AB胶比例为A胶100重量份,B胶100重量份。
作为优选,所述紫光芯片的UVA波段范围在365~415nm。
一种低光衰紫光LED的制造方法,其特征在于,步骤如下:
(1)将紫光芯片放入碗杯的内底部,然后将固晶胶置于固晶机上进行固晶作业,固定住紫光芯片,固晶胶的高度为紫光芯片高度的1/3~1/2;
(2)将固定好紫光芯片的碗杯放入烤箱中进行烘烤,烘烤分为两个阶段,第一阶段烘烤温度为100℃,时间为60分钟,使固晶胶中的反应抑制剂挥发,第二阶段烘烤温度为150℃,时间为120分钟,使固晶胶固化;
(3)将碗杯内的紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接,其中紫光芯片、键合金丝、正极导柱以及负极导柱与碗杯牵连于一起,以下内容中再出现时简称为碗杯及其附属件;
(4)将有机硅改性环氧树脂按照A胶10重量份和B胶6重量份比例混合好倒入容器中,搅拌30分钟,使其混合均匀,制成内胶;
(5)将调配好的内胶置于点胶机上进行点胶作业,点胶温度为30℃,内胶点满整个碗杯;
(6)将点胶后的碗杯及其附属件一同放入烤箱进行烘烤,烘烤温度为150℃,时间为60分钟;
(6)将环氧树脂按照A胶100重量份和B胶100重量份比例混合好倒入容器中,搅拌30分钟,使其混合均匀,制成外胶;
(7)将内胶固化后的碗杯及其附属件置于封胶机上进行封装作业,封装时碗杯需粘外胶,粘外胶温度为80℃,且每小时换外胶一次;
(8)将封装后的碗杯放入烤箱进行烘烤,烘烤分为三个阶段,第一阶段烘烤温度为90℃,时间为20分钟,第二阶段烘烤温度为110℃,时间为20分钟,第三阶段烘烤温度为130℃,时间为40分钟;使内胶与外胶更好地融合,固化后形成产品。
有益效果:本发明中的外胶和内胶组成成分大体一致,如此内胶和外胶的结合时,使得气泡及分层这一困扰业界十几年的难题得到彻底解决。同时内胶和外胶膨胀系数较为一致,内应力基本消除,经100次冷热冲击,LED仍能正常工作(高温100℃,低温-40℃),由于内胶组份进行硅改性,紫外光透光性及其光衰性能大幅提高。
附图说明
图1为本发明的结构示意图;
图2为本发明冷热冲击曲线图;
图3为本发明光衰曲线图。
图中:1-碗杯,2-负极导柱,3-正极导柱,4-固晶胶,5-紫光芯片,6-内胶,7-外胶,8-键合金丝。
具体实施方式
为了使本发明的技术手段、创作特征与达成目的易于明白理解,以下结合具体实施例进一步阐述本发明。
实施例:如图1所示,一种低光衰紫光LED,包括一上口大下底小的碗杯1,以及一对正负电极导柱,正负电极导柱进一步包括正极导柱3和负极导柱2,负极导柱2与碗杯1直接相连,而正极导柱3与碗杯1间隔分离,碗杯1的内底部通过固晶胶4固定有一紫光芯片5,紫光芯片5的UVA波段范围选用在365~415nm。固晶胶4的高度为紫光芯片5高度的1/3~1/2。紫光芯片5通过一对键合金丝8分别与正极导柱3和负极导柱2相连接,固定好紫光芯片5后,在碗杯1中填充内胶6,内胶6充满整个碗杯1,碗杯1外封装有一固化后呈子弹头形的外胶7,其中正极导柱3和负极导柱2伸出外胶7外。
固晶胶4为硅胶。
内胶6为有机硅改性环氧树脂,其中AB胶比例为A胶10重量份,B胶6重量份。
外胶7为环氧树脂,其中AB胶比例为A胶100重量份,B胶100重量份。
一种低光衰紫光LED的制造方法,步骤如下:
(1)将紫光芯片放入碗杯的内底部,然后将固晶胶置于固晶机上进行固晶作业,固定住紫光芯片,固晶胶的高度为紫光芯片高度的1/3~1/2;
(2)将固定好紫光芯片的碗杯放入烤箱中进行烘烤,烘烤分为两个阶段,第一阶段烘烤温度为100℃,时间为60分钟,使固晶胶中的反应抑制剂挥发,第二阶段烘烤温度为150℃,时间为120分钟,使固晶胶固化;
(3)将碗杯内的紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接,其中紫光芯片、键合金丝、正极导柱以及负极导柱与碗杯牵连于一起,以下内容中再出现时简称为碗杯及其附属件;
(4)将有机硅改性环氧树脂按照A胶10重量份和B胶6重量份比例混合好倒入容器中,搅拌30分钟,使其混合均匀,制成内胶;
(5)将调配好的内胶置于点胶机上进行点胶作业,点胶温度为30℃,内胶点满整个碗杯;
(6)将点胶后的碗杯及其附属件一同放入烤箱进行烘烤,烘烤温度为150℃,时间为60分钟;
(6)将环氧树脂按照A胶100重量份和B胶100重量份比例混合好倒入容器中,搅拌30分钟,使其混合均匀,制成外胶;
(7)将内胶固化后的碗杯及其附属件置于封胶机上进行封装作业,封装时碗杯需粘外胶,粘外胶温度为80℃,且每小时换外胶一次;
(8)将封装后的碗杯放入烤箱进行烘烤,烘烤分为三个阶段,第一阶段烘烤温度为90℃,时间为20分钟,第二阶段烘烤温度为110℃,时间为20分钟,第三阶段烘烤温度为130℃,时间为40分钟;使内胶与外胶更好地融合,固化后形成产品。
使用:本发明中的外胶和内胶组成成分大体一致,如此内胶和外胶的结合时,使得气泡及分层这一困扰业界十几年的难题得到彻底解决。同时内胶和外胶膨胀系数较为一致,内应力基本消除,经100次冷热冲击,LED仍能正常工作(如图2所示),由于内胶组份进行硅改性,紫外光透光性及其光衰性能大幅提高(如图3所示)。
Claims (3)
1.一种低光衰紫光LED,包括一上口大下底小的碗杯,以及一对正负电极导柱,所述正负电极导柱进一步包括正极导柱和负极导柱,所述负极导柱与所述碗杯直接相连,而所述正极导柱与所述碗杯间隔分离,其特征在于,所述碗杯的内底部通过固晶胶固定有一紫光芯片,所述固晶胶的高度为所述紫光芯片高度的1/3~1/2,所述紫光芯片通过一对键合金丝分别与所述正极导柱和负极导柱相连接,固定好所述紫光芯片后,在所述碗杯中填充内胶,所述内胶充满整个碗杯,所述碗杯外封装有一固化后呈子弹头形的外胶,其中所述正极导柱和负极导柱伸出所述外胶外;
所述固晶胶为硅胶;
所述内胶为有机硅改性环氧树脂,其中AB胶比例为A胶10重量份,B胶6重量份;
所述外胶为环氧树脂,其中AB胶比例为A胶100重量份,B胶100重量份。
2.根据权利要求1所述的低光衰紫光LED,其特征在于,所述紫光芯片的UVA波段范围在365~415nm。
3.一种根据权利要求1-2任意一项所述低光衰紫光LED的制造方法,其特征在于,步骤如下:
(1)将紫光芯片放入碗杯的内底部,然后将固晶胶置于固晶机上进行固晶作业,固定住紫光芯片,固晶胶的高度为紫光芯片高度的1/3~1/2;
(2)将固定好紫光芯片的碗杯放入烤箱中进行烘烤,烘烤分为两个阶段,第一阶段烘烤温度为100℃,时间为60分钟,使固晶胶中的反应抑制剂挥发,第二阶段烘烤温度为150℃,时间为120分钟,使固晶胶固化;
(3)将碗杯内的紫光芯片通过一对键合金丝分别与正极导柱和负极导柱相连接,其中紫光芯片、键合金丝、正极导柱以及负极导柱与碗杯牵连于一起,以下内容中再出现时简称为碗杯及其附属件;
(4)将有机硅改性环氧树脂按照A胶10重量份和B胶6重量份比例混合好倒入容器中,搅拌30分钟,使其混合均匀,制成内胶;
(5)将调配好的内胶置于点胶机上进行点胶作业,点胶温度为30℃,内胶点满整个碗杯;
(6)将点胶后的碗杯及其附属件一同放入烤箱进行烘烤,烘烤温度为150℃,时间为60分钟;
(6)将环氧树脂按照A胶100重量份和B胶100重量份比例混合好倒入容器中,搅拌30分钟,使其混合均匀,制成外胶;
(7)将内胶固化后的碗杯及其附属件置于封胶机上进行封装作业,封装时碗杯需粘外胶,粘外胶温度为80℃,且每小时换外胶一次;
(8)将封装后的碗杯放入烤箱进行烘烤,烘烤分为三个阶段,第一阶段烘烤温度为90℃,时间为20分钟,第二阶段烘烤温度为110℃,时间为20分钟,第三阶段烘烤温度为130℃,时间为40分钟;使内胶与外胶更好地融合,固化后形成产品。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610293879.2A CN105870307A (zh) | 2016-04-30 | 2016-04-30 | 一种低光衰紫光led及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610293879.2A CN105870307A (zh) | 2016-04-30 | 2016-04-30 | 一种低光衰紫光led及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105870307A true CN105870307A (zh) | 2016-08-17 |
Family
ID=56631205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610293879.2A Pending CN105870307A (zh) | 2016-04-30 | 2016-04-30 | 一种低光衰紫光led及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105870307A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107887481A (zh) * | 2017-11-09 | 2018-04-06 | 江苏稳润光电科技有限公司 | 一种光斑一致的白光led产品的制作方法及白光led产品 |
CN108417673A (zh) * | 2018-02-06 | 2018-08-17 | 珠海市圣大光电有限公司 | 一种低光衰led灯的封装工艺 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101313415A (zh) * | 2005-11-21 | 2008-11-26 | 松下电工株式会社 | 发光装置 |
CN101360368A (zh) * | 2007-07-30 | 2009-02-04 | 深圳莱特光电有限公司 | 一种暖白光led封装过程中隔离银层的方法 |
CN101916815A (zh) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | 一种发光二极管及其制备方法 |
CN102064244A (zh) * | 2010-11-09 | 2011-05-18 | 杭州杭科光电有限公司 | 大功率发光二极管的分层封装方法 |
US20110147778A1 (en) * | 2009-12-17 | 2011-06-23 | Nichia Corporation | Light emitting device |
US20120037934A1 (en) * | 2010-08-16 | 2012-02-16 | Han-Ming Lee | Pre-molded LED light bulb package |
CN103208578A (zh) * | 2013-03-21 | 2013-07-17 | 杭州杭科光电股份有限公司 | 一种全角度发光的led光源 |
CN103219453A (zh) * | 2013-04-03 | 2013-07-24 | 杭州杭科光电股份有限公司 | 一种低衰减发光二极管 |
-
2016
- 2016-04-30 CN CN201610293879.2A patent/CN105870307A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101313415A (zh) * | 2005-11-21 | 2008-11-26 | 松下电工株式会社 | 发光装置 |
CN101360368A (zh) * | 2007-07-30 | 2009-02-04 | 深圳莱特光电有限公司 | 一种暖白光led封装过程中隔离银层的方法 |
US20110147778A1 (en) * | 2009-12-17 | 2011-06-23 | Nichia Corporation | Light emitting device |
US20130316478A1 (en) * | 2009-12-17 | 2013-11-28 | Nichia Corporation | Light emitting device |
CN101916815A (zh) * | 2010-07-09 | 2010-12-15 | 电子科技大学 | 一种发光二极管及其制备方法 |
US20120037934A1 (en) * | 2010-08-16 | 2012-02-16 | Han-Ming Lee | Pre-molded LED light bulb package |
CN102064244A (zh) * | 2010-11-09 | 2011-05-18 | 杭州杭科光电有限公司 | 大功率发光二极管的分层封装方法 |
CN103208578A (zh) * | 2013-03-21 | 2013-07-17 | 杭州杭科光电股份有限公司 | 一种全角度发光的led光源 |
CN103219453A (zh) * | 2013-04-03 | 2013-07-24 | 杭州杭科光电股份有限公司 | 一种低衰减发光二极管 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107887481A (zh) * | 2017-11-09 | 2018-04-06 | 江苏稳润光电科技有限公司 | 一种光斑一致的白光led产品的制作方法及白光led产品 |
CN108417673A (zh) * | 2018-02-06 | 2018-08-17 | 珠海市圣大光电有限公司 | 一种低光衰led灯的封装工艺 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101740707B (zh) | 预成型荧光粉贴片及其与发光二极管的封装方法 | |
CN106784031A (zh) | 一种新型光电传感器的封装件 | |
CN107706284B (zh) | 一种led封装方法及封装结构 | |
CN103560202B (zh) | 一种白光led灯及其制备方法 | |
CN105870112A (zh) | 一种混合波长紫光led及其制造方法 | |
CN105870307A (zh) | 一种低光衰紫光led及其制造方法 | |
CN106972093B (zh) | 发光二极管封装结构 | |
CN108726468A (zh) | 传感器封装结构、方法及封装模具 | |
CN108726469A (zh) | 传感器封装结构及方法 | |
CN103681978A (zh) | 白光led封装方法及采用该方法封装的白光led | |
CN106024649A (zh) | 一种超薄环境光与接近传感器的晶圆级封装及其封装方法 | |
CN108305932A (zh) | 一种高光效白光lamp-led结构及封装方法 | |
CN101436628B (zh) | 一种大功率芯片的荧光粉涂布工艺方法 | |
CN102862946A (zh) | 塑封预模内空封装的结构 | |
CN205564812U (zh) | 一种低光衰紫光led | |
CN205564811U (zh) | 一种高透光性紫光led | |
CN103367616A (zh) | 一种cob封装的led模块及其制造工艺 | |
CN107123721A (zh) | 一种带透镜式led封装结构及封装方法 | |
CN208747626U (zh) | 传感器封装结构及压力传感器 | |
CN107346801A (zh) | Led集成封装结构及其封装方法 | |
CN209119097U (zh) | 一种可调全光谱led封装结构 | |
CN102738372A (zh) | 一种新型led 集成光源模组及其制备方法 | |
CN209010148U (zh) | 传感器封装结构、封装模具及压力传感器 | |
CN105977249A (zh) | 实现超薄环境光与接近传感器的晶圆级封装的改进方法及其封装 | |
CN103579464A (zh) | 一种白光led封装方法及相应封装结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160817 |
|
RJ01 | Rejection of invention patent application after publication |