CN105870275B - 发光二极管及其制作方法 - Google Patents
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Abstract
本发明提供了一种发光二极管及其制作方法，其中所述发光二极管由下至上依次包括N型层、发光层、电子阻挡层、P型层；其中电子阻挡层由下至上依次为AlGaN层、三维P型氮化镓***层、二维AlGaN合并层。所述发光二极管的电子阻挡层在实现了电子有效阻挡的同时避免了P型AlGaN层中Mg掺活化效率低问题，三维P型氮化镓设计形成的锥状结构形成了非规则的势垒低谷，同时P型锥状结构对空穴注入效率具有一定的放大、加速功效，提升了空穴注入效率。
Description
技术领域
本发明涉及氮化镓半导体器件领域，尤其涉及一种具有新型电子阻挡层的发光二极管及其制作方法。
背景技术
发光二极管（英文为Light Emitting Diode，缩写为LED）是一种半导体固体发光器件，其利用半导体PN结作为发光结构，目前氮化镓被视为第三代III-IV族半导体具有较宽带隙、高发光效率、化学性质稳定等特点，但目前空穴注入效率低成为高亮发光二极管发展瓶颈之一。
在LED结构设计中，介于发光区与P型层之间的电子阻挡层承担的阻隔过冲电子的任务，但较高的势垒同时会成为空穴注入的障碍。
发明内容
本发明提供一种具有新型电子阻挡层的发光二极管及其制作方法，其在有效阻挡过冲电子同时提高空穴遂穿。
本发明提供的技术方案如下：一种发光二极管，由下至上依次包括： N型层、发光层、电子阻挡层及P型层，其中所述电子阻挡层由下至上依次为AlGaN层、三维P型氮化镓***层、二维AlGaN合并层，该新型电子阻挡层在实现了电子有效阻挡的同时避免了P型AlGaN层中Mg掺活化效率低问题，三维P型氮化镓***层设计形成了非规则的势垒低谷，同时对空穴注入效率具有一定的放大、加速功效，大大提升空穴注入效率。
优选的，所述电子阻挡层中AlGaN层与二维AlGaN合并层Al组分保持一致。
优选的，所述电子阻挡层中AlGaN层Al组分高于二维AlGaN合并层中Al组分。
优选的，所述电子阻挡层中P型氮化镓层***层中Mg掺杂浓度保持一致。
优选的，所述电子阻挡层中三维P型氮化物***层中Mg掺杂浓度由下至上呈现递增趋势。
前述发光二极管的制作方法，包括步骤：1）依次生长缓冲层，非掺氮化物层、N型层、发光层；2）在发光层上依次生长AlGaN层、三维P型氮化镓***层、二维AlGaN合并层构成电子阻挡层；3）在所述电子阻挡层生长P型层。
所述步骤2）具体为：首先生长AlGaN层，调整反应室条件生长三维P型氮化镓层，最后调整生长条件生长二维AlGaN合并层。
优选的，通过调整Al源及Ga源通入量调整步骤2）及步骤4）中AlGaN层和二维AlGaN合并层中Al组分。
优选的，通过调整Mg源及III族源通入比例调整步骤3）三维P型氮化物层中Mg掺杂浓度，实现浓度一致或递增。
优选的，通过调整反应室温度、压力、及IV-III比条件，使反应室条件利于三维氮化物生长，并通入Mg源实现步骤3）中三维P型氮化镓层生长。
优选的，通过调整生长条件，实现步骤4）低速二维生长，覆盖步骤3）中三维P型氮化物所形成的空隙。
本发明至少具有以下有益效果：所述发光二极管的电子阻挡层中***了三维P型氮化镓***层，该结构在实现了电子有效阻挡的同时解决了P型AlGaN层中Mg掺活化效率低问题，三维P型氮化镓设计形成的锥状结构，锥状结构顶端与P型层之间势垒低、厚度薄，形成了非规则的势垒低谷，同时P型锥状结构对空穴注入效率具有一定的放大、加速功效，大大提升空穴注入效率。
附图说明
图1为根据本发明实施的一种具有新型电子阻挡层的发光二极管外延片结构设计。
图中标示：1.衬底，2.缓冲层，3.非掺氮化镓层，4.N型氮化镓层，5.发光层，6.电子阻挡层，7.P型层，601. AlGaN层，602. 三维P型氮化镓***层，603.二维AlGaN合并层。
具体实施方式
为使本发明更易于理解其实质性特点及其所具的实用性，下面便结合附图对本发明若干具体实施例作进一步的详细说明，但需要说明的是以下关于实施例的描述及说明对本发明保护范围不构成任何限制。
实施例
图1为根据本发明实施的一种发光二极管外延片结构示意图，本实施例中外延层由下至上依次包括：（1）蓝宝石衬底1；（2）低温缓冲层2，可以为氮化镓、氮化铝、或铝镓氮结合，膜厚在10~100nm之间；（3）非掺氮化镓层3，膜厚在300~7000nm之间，优选3500nm；（4）N型氮化镓层4，厚度大于1000nm；（5）量子阱发光层5，以InGaN作为阱层、以GaN或AlGaN或二者组合作为垒层构成，其中垒层厚度在50~150nm之间、阱层厚度在1~20nm之间；（6）电子阻挡层6；（7）P型层7，厚度在100~2000nm之间，优选200nm，Mg掺杂浓度优选5×1020/ cm3。
其中，该电子阻挡层由下至上依次包括：（1）常规AlGaN层601，生长厚度介于0.1nm~500nm之间，优选100nm；优选Al组分为30%；（2）三维P型氮化镓***层602，生长厚度介于1~200nm之间，Mg掺杂浓度为1×1018/cm3~1×1021/cm3，具体生长方法为：提高反应室压力、降低反应室温度、降低反应室IV-III比、降低生长速率在量子阱发光层5上形成三维P型氮化物结构层，优选生长压力为600torr、温度为700℃、转速300 rmp/min，通入Ga源、Mg源，优化生长速率为200nm/h，生长三维P型氮化镓***层602，优选垂直生长厚度为50nm形成锥状P型层，Mg掺杂浓度为1/cm3；（3）二维AlGaN合并层603，具体生长方法为：提高反应室压力、提高反应室温度，提高生长速率，生长二维AlGaN合并层603，Al组分为30%，二维AlGaN合并层填充步骤（2）中三维P型氮化镓***层生长过程中形成的空隙，空隙完全填充后再次生长约100nm后调至下一层。
作为本发明的一个具体实施例，本发明通过采用新型的电子阻挡层，该结构中三维P型氮化镓层***层在实现了电子有效阻挡的同时解决了P型AlGaN层中Mg掺活化效率低问题，三维P型氮化镓***层602设计形成的锥状结构，锥状结构顶端与P型层之间势垒低、厚度薄，形成了非规则的势垒低谷，同时P型锥状结构对空穴注入发光区具有一定的放大、加速功效，提升空穴注入效率。
作为本实施例中第一个实施例变形，调整常规AlGaN层601层中Al组分为40%，调整二维AlGaN合并层603中Al组分为20%，这样可以通过在电子阻挡层前段形成较薄的势垒尖峰，阻挡大部分过冲电子；降低603中Al组分，在拦截越过 601的电子同时进一步降低空穴注入势垒。
作为本实施例的第二个实施例变形，P型氮化镓***层602生长过程中，Mg掺杂浓度由低渐变至高掺，本案中优选初始Mg掺杂浓度为1×1019/cm3，最高渐变至于P型层Mg掺杂浓度一致，这样P型氮化镓***层所形成锥状体顶端具有较高的Mg掺，浓度与P型层浓度一致，更加有利于空穴从锥状体顶端穿透二维AlGaN合并层603，进一步提升空穴注入效率。
以上所述仅为本发明的优选实施方式，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改、润饰和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进均视为在本发明的保护范围之内。
Claims (9)
1.发光二极管，包括N型层、发光层、电子阻挡层和P型层，其特征在于：所述电子阻挡层由下至上依次为AlGaN层、三维P型氮化镓***层、二维AlGaN合并层，所述三维P型氮化镓***层形成非规则的势垒低谷，所述电子阻挡层中AlGaN层Al组分高于二维AlGaN合并层中Al组分。
2.根据权利要求1所述的发光二极管，其特征在于：所述三维P型氮化镓***层具有锥状结构，加速空穴进入所述三维P型氮化镓***层。
3.根据权利要求1所述的发光二极管，其特征在于：所述电子阻挡层中三维P型氮化镓层***层中Mg掺杂浓度保持一致。
4.根据权利要求1所述的发光二极管，其特征在于：所述电子阻挡层中三维P型氮化物***层中Mg掺杂浓度由下至上呈现递增趋势。
5.根据权利要求1所述的发光二极管，其特征在于：所述三维P型氮化镓层掺入In，形成P型InGaN层。
6.权利要求1-5任一项所述发光二极管的制作方法，包括步骤：
1）依次生长缓冲层，非掺氮化物层、N型层、发光层；
2）随后生长电子阻挡层，首先生长AlGaN层；
3）调整反应室条件生长三维P型氮化镓***层；
4）调整生长条件生长二维AlGaN合并层；
在所述电子阻挡层上生长P型层，通过调整Al源及Ga源通入量控制所述步骤2）及步骤4）中AlGaN层和二维AlGaN合并层中Al组分。
7.根据权利要求6所述的发光二极管的制作方法，其特征在于：通过调整Mg源及III族源通入比例调整步骤3）三维P型氮化物***层中Mg掺杂浓度，实现浓度一致或递增。
8.根据权利要求6或者7所述的发光二极管的制作方法，其特征在于：通过调整反应室温度、压力、及IV-III比，使反应室的生长条件利于三维氮化物生长，并通入Mg源实现步骤3）中三维P型氮化镓***层生长。
9.根据权利要求6或者7所述的发光二极管的制作方法，其特征在于：通过调整生长条件，实现步骤4）低速二维生长，覆盖所述步骤3）中三维P型氮化物***层所形成的空隙。
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| CN113451454B (zh) * | 2020-09-17 | 2022-08-05 | 重庆康佳光电技术研究院有限公司 | 一种p型半导体层生长方法、led外延层及芯片 |
| CN112397621B (zh) * | 2020-10-30 | 2022-03-18 | 华灿光电(苏州）有限公司 | 紫外发光二极管的外延片及其制备方法 |
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