CN105870275B - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
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- CN105870275B CN105870275B CN201610350859.4A CN201610350859A CN105870275B CN 105870275 B CN105870275 B CN 105870275B CN 201610350859 A CN201610350859 A CN 201610350859A CN 105870275 B CN105870275 B CN 105870275B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The present invention provides a kind of light emitting diodes and preparation method thereof, wherein the light emitting diode successively includes N-type layer, luminescent layer, electronic barrier layer, P-type layer from the bottom to top；Wherein electronic barrier layer is followed successively by AlGaN layer, three-dimensional p-type gallium nitride insert layer, two dimension AlGaN merging layer from the bottom to top.The electronic barrier layer of the light emitting diode avoids Mg in p-type AlGaN layer while realizing electronics and effectively stopping and mixes the low problem of activation efficiency, three-dimensional p-type gallium nitride designs the cone structure to be formed and forms irregular potential barrier low ebb, p-type cone structure has effects that certain amplification to hole injection efficiency, accelerates simultaneously, improves hole injection efficiency.
Description
Technical field
The present invention relates to gallium nitride semiconductor device field more particularly to a kind of luminous two with novel electron barrier layer
Pole pipe and preparation method thereof.
Background technique
Light emitting diode (English is Light Emitting Diode, is abbreviated as LED) is that a kind of semiconducting solid is luminous
Device, using semiconductor PN as light emitting structure, at present gallium nitride be considered as third generation III-IV race's semiconductor have compared with
The features such as broad-band gap, high-luminous-efficiency, chemical property are stablized, but the low high-brightness light emitting diode that becomes of hole injection efficiency is sent out at present
Open up one of bottleneck.
In LED structure design, the barrier that the electronic barrier layer between luminous zone and P-type layer undertakes overshoots electronics
Task, but higher potential barrier can become the obstacle of hole injection simultaneously.
Summary of the invention
The present invention provides a kind of light emitting diode and preparation method thereof with novel electron barrier layer, is effectively stopping
Hole tunnel is improved when overshooting electron synchrotron.
Technical solution provided by the invention is as follows: a kind of light emitting diode, from the bottom to top successively includes: N-type layer, shines
Layer, electronic barrier layer and P-type layer, wherein the electronic barrier layer is followed successively by AlGaN layer from the bottom to top, three-dimensional p-type gallium nitride is inserted
Enter layer, two dimension AlGaN merging layer, which avoids p-type AlGaN while realizing electronics and effectively stopping
Mg mixes the low problem of activation efficiency in layer, and three-dimensional p-type gallium nitride insert layer design forms irregular potential barrier low ebb, while to sky
Cave injection efficiency has effects that certain amplification, accelerates, and greatly promotes hole injection efficiency.
Preferably, AlGaN layer merges layer Al component with two dimension AlGaN and is consistent in the electronic barrier layer.
Preferably, AlGaN layer Al component is higher than two dimension AlGaN and merges Al component in layer in the electronic barrier layer.
Preferably, Mg doping concentration is consistent in p-type gallium nitride layer insert layer in the electronic barrier layer.
Preferably, Mg doping concentration presents pass from the bottom to top in three-dimensional p-type nitride insert layer in the electronic barrier layer
Increasing trend.
The production method of aforementioned light emitting diode, comprising steps of 1) successively grown buffer layer, non-nitrating compound layer, N-type
Layer, luminescent layer；2) AlGaN layer, three-dimensional p-type gallium nitride insert layer, two dimension AlGaN is successively grown on the light-emitting layer to merge layer and constitute
Electronic barrier layer；3) in the electronic barrier layer growing P-type layer.
The step 2 specifically: growth AlGaN layer first adjusts reaction chamber conditioned growth three-dimensional p-type gallium nitride layer, most
Adjustment growth conditions growth two dimension AlGaN merges layer afterwards.
Preferably, by adjusting the source Al and the source Ga intake set-up procedure 2) and step 4) in AlGaN layer and two dimension AlGaN
Merge Al component in layer.
Preferably, ratio set-up procedure 3 is passed through by adjusting the source Mg and group III source) Mg doping in three-dimensional p-type nitride layer
Concentration realizes that concentration is consistent or incremental.
Preferably, reaction chamber condition is made to be conducive to three-dimensional nitrogen than condition by adjusting reaction chamber temperature, pressure and IV-III
Compound growth, and be passed through the source Mg and realize three-dimensional p-type gallium nitride layer growth in step 3).
Preferably, by adjusting growth conditions, step 4) low speed two-dimensional growth, covering step 3 are realized) in three-dimensional p-type nitrogen
Compound is formed by gap.
The present invention, which at least has the advantages that in the electronic barrier layer of the light emitting diode, inserts three-dimensional p-type
Gallium nitride insert layer, which solves Mg in p-type AlGaN layer while realizing electronics and effectively stopping, and to mix activation efficiency low
Problem, three-dimensional p-type gallium nitride design the cone structure to be formed, and potential barrier is low between cone structure top and P-type layer, thickness is thin, shape
At irregular potential barrier low ebb, while p-type cone structure has effects that certain amplification to hole injection efficiency, accelerates, greatly
It is big to promote hole injection efficiency.
Detailed description of the invention
Fig. 1 is that a kind of LED epitaxial slice structure with novel electron barrier layer implemented according to the present invention is set
Meter.
Indicate in figure: 1. substrates, 2. buffer layers, 3. non-mix gallium nitride layer, 4.N type gallium nitride layer, 5. luminescent layers, 6. electronics
Barrier layer, 7.P type layer, 601. AlGaN layers, 602. three-dimensional p-type gallium nitride insert layers, 603. two dimension AlGaN merge layer.
Specific embodiment
To make the practicability of the invention that its substantive distinguishing features is more readily understood and its has, below just in conjunction with attached drawing to this hair
Bright several specific embodiments are described in further detail, but it should be noted that description below in relation to embodiment and explanation pair
The scope of the present invention is not limited in any way.
Embodiment
Fig. 1 is a kind of LED epitaxial slice structure schematic diagram implemented according to the present invention, the present embodiment epitaxial layers
It from the bottom to top successively include: (1) Sapphire Substrate 1；(2) low temperature buffer layer 2 can be gallium nitride, aluminium nitride or aluminum gallium nitride knot
It closes, film thickness is between 10 ~ 100nm；(3) non-to mix gallium nitride layer 3, film thickness is between 300 ~ 7000nm, preferably 3500nm；(4) N-type
Gallium nitride layer 4, thickness are greater than 1000nm；(5) mqw light emitting layer 5, using InGaN as well layer, with GaN or AlGaN or both
Combination is constituted as barrier layer, wherein barrier layer thickness between 50 ~ 150nm, well layer thickness is between 1 ~ 20nm；(6) electronic blocking
Layer 6；(7) P-type layer 7, thickness is between 100 ~ 2000nm, preferably 200nm, Mg doping concentration preferably 5 × 1020/ cm3。
Wherein, which successively includes: (1) conventional AlGaN layer 601 from the bottom to top, and growth thickness is between 0.1nm
Between ~ 500nm, preferably 100nm；It is preferred that Al group is divided into 30%；(2) three-dimensional p-type gallium nitride insert layer 602, growth thickness between 1 ~
Between 200nm, Mg doping concentration is 1 × 1018/cm3~1×1021/cm3, specific growing method are as follows: improve chamber pressure, drop
Low reaction room temperature, reduction reaction chamber IV-III ratio, reduction growth rate form three-dimensional p-type nitridation on mqw light emitting layer 5
Object structure sheaf, preferred growth pressure is 600torr, temperature is 700 DEG C, 300 rmp/min of revolving speed, is passed through the source Ga, the source Mg, optimization
Growth rate is 200nm/h, and growing three-dimensional p-type gallium nitride insert layer 602, preferred vertical growth thickness is that 50nm forms cone cell P
Type layer, Mg doping concentration are 1/cm3；(3) two dimension AlGaN merges layer 603, specific growing method are as follows: improves reaction chamber pressure
Power improves reaction chamber temperature, improves growth rate, and growth two dimension AlGaN merges layer 603, and Al group is divided into 30%, and two-dimentional AlGaN is closed
And the gap formed in three-dimensional p-type gallium nitride insert layer growth course in layer filling step (2), gap are secondary again after being filled up completely
Next layer is adjusted to after being about 100nm.
As a specific embodiment of the invention, the present invention is by using novel electronic barrier layer, three in the structure
Dimension p-type gallium nitride layer insert layer solves Mg in p-type AlGaN layer while realizing electronics and effectively stopping, and to mix activation efficiency low
Problem, the cone structure that the design of three-dimensional p-type gallium nitride insert layer 602 is formed, between cone structure top and P-type layer potential barrier it is low,
Thickness is thin, forms irregular potential barrier low ebb, at the same p-type cone structure to hole injection luminous zone have certain amplification,
Accelerate effect, promotes hole injection efficiency.
It is deformed as one embodiment in the present embodiment, adjusts Al group in conventional 601 layers of AlGaN layer and be divided into 40%, adjustment
Two-dimentional AlGaN merges Al group in layer 603 and is divided into 20%, in this way can be by forming relatively thin potential barrier point in electronic barrier layer leading portion
Peak stops most of overshoot electronics；Al component in 603 is reduced, further decreases hole when intercepting and crossing 601 electron synchrotron
Injection barrier.
Second embodiment as the present embodiment deforms, and in 602 growth course of p-type gallium nitride insert layer, Mg doping is dense
Degree is by low gradual change to highly doped, and preferably initial Mg doping concentration is 1 × 10 in this case19/cm3, highest gradual change is as P-type layer Mg doping
Concentration is consistent, and such formed cone top Mg with higher of p-type gallium nitride insert layer mixes, concentration and P-type layer concentration one
It causes, is more conducive to hole from cone top and penetrates two-dimentional AlGaN merging layer 603, further promote hole injection efficiency.
The foregoing is merely the preferred embodiment of the present invention, are not intended to restrict the invention, for the technology of this field
For personnel, the present invention can have various changes, retouching and variation.All within the spirits and principles of the present invention, made
What modification, equivalent replacement, improvement are accordingly to be regarded as within protection scope of the present invention.
Claims (9)
1. light emitting diode, including N-type layer, luminescent layer, electronic barrier layer and P-type layer, it is characterised in that: the electronic barrier layer
It is followed successively by AlGaN layer, three-dimensional p-type gallium nitride insert layer, two dimension AlGaN from the bottom to top and merges layer, the three-dimensional p-type gallium nitride is inserted
Enter layer and form irregular potential barrier low ebb, AlGaN layer Al component is higher than two dimension AlGaN and merges Al in layer in the electronic barrier layer
Component.
2. light emitting diode according to claim 1, it is characterised in that: the three-dimensional p-type gallium nitride insert layer has cone
Shape structure accelerates hole to enter the three-dimensional p-type gallium nitride insert layer.
3. light emitting diode according to claim 1, it is characterised in that: three-dimensional p-type gallium nitride in the electronic barrier layer
Mg doping concentration is consistent in layer insert layer.
4. light emitting diode according to claim 1, it is characterised in that: three-dimensional p-type nitride in the electronic barrier layer
Increasing trend is presented in Mg doping concentration from the bottom to top in insert layer.
5. light emitting diode according to claim 1, it is characterised in that: the three-dimensional p-type gallium nitride layer mixes In, is formed
P-type InGaN layer.
6. the production method of any one of the claim 1-5 light emitting diode, comprising steps of
1) successively grown buffer layer, non-nitrating compound layer, N-type layer, luminescent layer；
2) electronic barrier layer is then grown, first growth AlGaN layer；
3) reaction chamber conditioned growth three-dimensional p-type gallium nitride insert layer is adjusted；
4) adjustment growth conditions growth two dimension AlGaN merges layer；
The growing P-type layer on the electronic barrier layer controls the step 2 and step by adjusting the source Al and the source Ga intake
4) AlGaN layer and two dimension AlGaN merge Al component in layer in.
7. the production method of light emitting diode according to claim 6, it is characterised in that: by adjusting the source Mg and III group
Source is passed through ratio set-up procedure 3) Mg doping concentration in three-dimensional p-type nitride insert layer, realize that concentration is consistent or incremental.
8. according to the production method of light emitting diode described in claim 6 or 7, it is characterised in that: by adjusting reaction chamber
Temperature, pressure and IV-III ratio make the growth conditions of reaction chamber be conducive to three-dimensional nitride growth, and are passed through the source Mg and realize step
3) three-dimensional p-type gallium nitride insert layer growth in.
9. according to the production method of light emitting diode described in claim 6 or 7, it is characterised in that: by adjusting growth item
Part realizes step 4) low speed two-dimensional growth, covers three-dimensional p-type nitride insert layer in the step 3) and is formed by gap.
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| CN201610350859.4A CN105870275B (en) | 2016-05-25 | 2016-05-25 | Light emitting diode and preparation method thereof |
| PCT/CN2017/085656 WO2017202329A1 (en) | 2016-05-25 | 2017-05-24 | Light-emitting diode and manufacturing method thereof |
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| CN201610350859.4A CN105870275B (en) | 2016-05-25 | 2016-05-25 | Light emitting diode and preparation method thereof |
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| CN105870275B true CN105870275B (en) | 2019-01-11 |
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| WO2017202329A1 (en) * | 2016-05-25 | 2017-11-30 | 厦门三安光电有限公司 | Light-emitting diode and manufacturing method thereof |
| CN107768494B (en) * | 2017-09-27 | 2020-04-03 | 安徽三安光电有限公司 | LED epitaxial structure and preparation method thereof |
| CN109346569B (en) * | 2018-10-09 | 2020-06-23 | 合肥彩虹蓝光科技有限公司 | LED epitaxial structure growth method |
| WO2022056780A1 (en) * | 2020-09-17 | 2022-03-24 | 重庆康佳光电技术研究院有限公司 | P-type semiconductor layer growing method, led epitaxial layer, chip, and electronic device |
| CN113451454B (en) * | 2020-09-17 | 2022-08-05 | 重庆康佳光电技术研究院有限公司 | P-type semiconductor layer growth method, LED epitaxial layer and chip |
| CN112397621B (en) * | 2020-10-30 | 2022-03-18 | 华灿光电(苏州）有限公司 | Epitaxial wafer of ultraviolet light-emitting diode and preparation method thereof |
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| JP5540834B2 (en) * | 2010-03-30 | 2014-07-02 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
| CN102185064A (en) * | 2011-04-19 | 2011-09-14 | 武汉华炬光电有限公司 | AlGaN base deep ultraviolet light-emitting diode (LED) device using multiple quantum well electronic barrier layer to improve luminescent efficiency and manufacturing method of AlGaN base deep ultraviolet LED device |
| CN102820394B (en) * | 2011-06-07 | 2015-04-01 | 山东华光光电子有限公司 | LED structure with aluminum-component-gradient electron blocking layer |
| KR101482526B1 (en) * | 2012-12-28 | 2015-01-16 | 일진엘이디(주) | Method of manufacturing nitride semiconductor light emitting device |
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