CN105826461B - A kind of temperature stabilization piezoelectric composite ceramics oscillator - Google Patents
A kind of temperature stabilization piezoelectric composite ceramics oscillator Download PDFInfo
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- CN105826461B CN105826461B CN201610129884.XA CN201610129884A CN105826461B CN 105826461 B CN105826461 B CN 105826461B CN 201610129884 A CN201610129884 A CN 201610129884A CN 105826461 B CN105826461 B CN 105826461B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 197
- 239000002131 composite material Substances 0.000 title claims abstract description 23
- 230000006641 stabilisation Effects 0.000 title description 5
- 238000011105 stabilization Methods 0.000 title description 5
- 239000010410 layer Substances 0.000 claims description 30
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910020291 Pb(ZraTi1−a)O3 Inorganic materials 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The present invention provides a kind of temperature to stablize piezoelectric composite ceramics oscillator, and piezoelectric ceramics is formed with first electrode layer on the surface at the piezoelectric ceramics both ends；Dielectric ceramic is formed with the second electrode lay on the surface at the dielectric ceramic both ends；First exit, first exit are in close contact with the first electrode layer of the piezoelectric ceramics and dielectric ceramic homonymy, the second electrode lay；Second exit, second exit are in close contact with the first electrode layer of the dielectric ceramic and another homonymy of dielectric ceramic, the second electrode lay；Wherein, it is within 35% in 30 DEG C of temperature coefficient of capacitance, it is within+35% in 85 DEG C of temperature coefficient of capacitance, the Capacitance Shift Rate of the piezoelectric ceramics increases with the raising of temperature, the dielectric ceramic is within+65% in 30 DEG C of temperature coefficient of capacitance, it is within 55% in 85 DEG C of temperature coefficient of capacitance, the Capacitance Shift Rate of the dielectric ceramic reduces with the raising of temperature.
Description
Technical field
The present invention relates to piezoelectric ceramics fields, and in particular to a kind of temperature stabilization piezoelectric composite ceramics oscillator is especially used
In the piezoelectric ceramic vibrator of back-up radar probe.
Background technology
From the appearance of piezoelectric ceramics, many countries have all carried out systematic research to piezoelectric ceramics both at home and abroad, and with
That develops gos deep into, and a series of PZT piezoceramic materials of superior performances, the application range of piezoceramic material has also been developed
It expands significantly, wherein being modified based on lead zirconate titanate.High performance piezoelectric ceramics in order to obtain, current big multipair PZT
Material itself is doped modification, by being doped to A in PZT piezoelectric ceramics or B ionic compartmentations, to adjust PZT
The performance of piezoelectric ceramics.
With the development of technology, modern component is also higher and higher to the performance requirement of piezoelectric ceramics.This aspect embodies
On its preferable piezoelectric property, still further aspect, the expansion and people due to its application range are to piezoelectric device safety
The requirement of the raising of coefficient requirements, temperature stability is also higher and higher.In order to improve temperature stability, traditional method is main
It realizes by adjusting being formulated, but is constrained to PZT material itself, to obtain the preferable PZT ceramic materials ratio of temperature stability
More difficult, this is embodied, and reproduction difficulty is big, the production cycle is long, and the comprehensive performance of the piezoceramic material obtained does not allow people full
Meaning.
If Chinese patent CN201410053547.9 discloses a kind of sodium potassium niobate base leadless piezoelectric ceramics material, by with
Potassium-sodium niobate is matrix, mixes Section 2 substance and third component Bi（Mg,Ti）O3Ternary system is established, a kind of piezoelectricity is obtained
Constant d33For 212 ~ 225pC/N, the leadless piezoelectric ceramics that electromechanical coupling factor is 40% ~ 41.5%, but it does not provide the piezoelectricity
The temperature coefficient of capacitance of ceramic material, and too low electromechanical coupling factor limits the requirement for meeting application.
Also as disclosed a kind of piezoceramic material, sintered body and its preparation side in Chinese patent 201310396233.3
Method, piezoelectric ceramic devices, by carrying out A and B substituting modification to PZT piezoelectric ceramics, and it is rare earth doped element modified, it obtains
A kind of relative dielectric constant is 1262, electromechanical coupling factor 0.63, piezoelectric constant d33For the temperature compensation characteristic of 322 pC/N
Piezoceramic material, but too low dielectric properties and lower electromechanical coupling factor cause its comprehensive performance not make one
It is satisfied.
Another discloses a kind of piezoelectric-actuator in patent document application No. is CN200580030714.6,
The capacitance of piezoelectric element used by asking varies with temperature and the fluctuating range that generates is within ± 14% or ± 11%.For example,
In the practical process of piezoelectricity radar for backing car, automotive needs can also normal use under different temperature occasions.At present in the world
Reversing radar of vehicle probe temperature applicable range be -30 DEG C ~+85 DEG C, the temperature range Capacitance Shift Rate control exist
± 15%, Japan has part of the manufacturer to be controlled within ± 10%, and piezoelectric ceramics Capacitance Shift Rate is got over hour, automobile probe
Stability is also better.And existing piezoelectric ceramic vibrator will keep the electrical property of good piezoelectricity（Dielectric constant, electromechanical lotus root collaboration
Number）While, it has been difficult batch industrialization to make its Capacitance Shift Rate control ± 10%.
For such situation, those skilled in the art also achieve certain achievement in studying previous, such as China
In patent CN201610072538.2, is connected, finally obtained using the piezoceramics layer and dielectric ceramic layer of different temperature coefficients
Temperature stability can be excellent piezoelectric ceramic vibrator.But in the technical scheme, due to dielectric ceramic piece thickness requirement compared with
Thin, only 0.01 ~ 0.1mm, difficulty is larger for the production technology of batch, and medium is easily deformed cracking, substandard products in sintering
Rate is high, causes production cost higher.Therefore, invention technician is during improved to the technical optimization, surprised hair
Existing, when piezoelectric ceramics medium is changed into parallel with the structure type of dielectric ceramic, the thickness of dielectric ceramic can obviously increase
0.1 ~ 0.9mm is added to, and the overall performance of piezoelectric ceramic vibrator can also be maintained at higher level, this, which is undoubtedly solved, previously criticized
The problem of measuring the deformation of production process dielectric ceramic post sintering, cracking.
Invention content
The present invention is in order to solve the problems, such as existing piezoelectric ceramic vibrator, and it is good to provide a kind of comprehensive performance, together
When within the scope of -30 DEG C ~+85 DEG C, temperature coefficient of capacitance be -3% ~+3% piezoelectric ceramic vibrator, due to use piezoelectric ceramics and Jie
Electroceramics form parallel with one another, expands the thickness requirement of dielectric ceramic, improves performance of the dielectric ceramic in sintering, carries
High yields, reduces production cost, and have surprisingly found that, the appearance Wen Te of piezoelectric ceramic vibrator entirety provided by the invention
Property does not occur deterioration.
In order to realize that the technical purpose of the present invention, the present invention adopt the following technical scheme that.
A kind of temperature stabilization piezoelectric composite ceramics oscillator, including：
Piezoelectric ceramics is formed with first electrode layer on the surface at the piezoelectric ceramics both ends；
Dielectric ceramic is formed with the second electrode lay on the surface at the dielectric ceramic both ends；
The first electrode layer of first exit, first exit and the piezoelectric ceramics and dielectric ceramic homonymy, the
Two electrode layers are in close contact；
Second exit, the first electrode of second exit and the dielectric ceramic and another homonymy of dielectric ceramic
Layer, the second electrode lay are in close contact；
Wherein, the temperature coefficient of capacitance of the piezoelectric ceramics is within -35%, at 85 DEG C in -30 DEG C of temperature coefficient of capacitance
Temperature coefficient of capacitance is within+35%, and the Capacitance Shift Rate of the piezoelectric ceramics increases with the raising of temperature, the dielectric ceramic
It is within+65% in -30 DEG C of temperature coefficient of capacitance, is the appearance of the dielectric ceramic within -55% in 85 DEG C of temperature coefficient of capacitance
Quantitative change rate reduces with the raising of temperature, and the piezoelectric ceramics, dielectric ceramic are mutual in -30 DEG C ~ 85 DEG C of temperature coefficient of capacitance
Compensation.
Preferably, the chemical composition of the piezoelectric ceramics is Pb（ZraTi1-a）O3, wherein 0.45< a ≤ 0.55.
Preferably, the chemical composition of the dielectric ceramic is Ba (Ti1-aZr a )O3, wherein 0.1< a ≤ 0.4.
Preferably, the thickness of the dielectric ceramic is 0.1 ~ 0.9mm.
It is furthermore preferred that the thickness of the dielectric ceramic is 0.4 ~ 0.7mm.
Preferably, the first electrode layer and the second electrode lay are metal electrodes.
It is furthermore preferred that the metal electrode is one kind in silver electrode or silver/palladium electrode.
Preferably, the piezoelectric ceramics is single-layer ceramic, and the dielectric ceramic forms for single-layer or multi-layer ceramic condenser.
Preferably, it is -3% ~+3% that the temperature, which stablizes piezoelectric ceramic vibrator in -30 DEG C ~+85 DEG C of Capacitance Shift Rate,.
The beneficial effects of the invention are as follows：Supply a kind of comprehensive performance good, while within the scope of -30 DEG C ~+85 DEG C, Rong Wen
The piezoelectric ceramic vibrator that change rate is -3% ~+3% expands dielectric using piezoelectric ceramics and dielectric ceramic form parallel with one another
The thickness requirement of ceramics improves performance of the dielectric ceramic in sintering, improves yields, reduce production cost.And
It has surprisingly found that, the appearance temperature characteristics of piezoelectric ceramic vibrator entirety provided by the invention do not occur deterioration, to realize -30
DEG C ~+85 DEG C in there is the warm variation coefficient of good appearances, at+85 DEG C, Capacitance Shift Rate is controlled+3%, at -30 DEG C, appearance
Quantitative change rate is controlled -3%.
The present invention improves electric pottery by using novel structure design on the basis of keeping good piezoelectric property
Performance of the ceramic dielectric in sintering, improves product yield, reduces production cost.Deisgn product of the present invention makes piezoelectricity make pottery simultaneously
The appearance temperature coefficient of porcelain oscillator is greatly improved, and is greatly improved piezoelectric property and reliability that reversing automobile assists probe, is expanded product
Application range, can be widely applied to higher use environment requirement automobile application in.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described：
Fig. 1 is the structural schematic diagram that a kind of temperature of the present invention stablizes piezoelectric composite ceramics oscillator.
In figure：1- piezoelectric ceramics；2- first electrode layers；3- dielectric ceramics；4- the second electrode lays；The first exits of 5-；6-
Second exit.
Specific implementation mode
In order to make the technical problems, technical solutions and beneficial effects solved by the present invention be more clearly understood, with reference to
Accompanying drawings and embodiments, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, the present invention is not limited.
Shown in referring to Fig.1, a kind of temperature stabilization piezoelectric composite ceramics oscillator provided by the invention, including piezoelectric ceramics 1,
It is formed with first electrode layer 2 on the surface at 1 both ends of the piezoelectric ceramics；Dielectric ceramic 3, the table at 3 both ends of the dielectric ceramic
Face is formed with the second electrode lay 4；First exit 5, first exit 5 and 3 homonymy of the piezoelectric ceramics 1 and dielectric ceramic
First electrode layer 2, the second electrode lay 4 be in close contact；Second exit 6, second exit 6 and the piezoelectric ceramics 1
It is in close contact with the first electrode layer 2 of 3 another homonymy of dielectric ceramic, the second electrode lay 4；
More specifically, the temperature coefficient of capacitance of the piezoelectric ceramics is within -35%, 85 in -30 DEG C of temperature coefficient of capacitance
DEG C temperature coefficient of capacitance be+35% within, the Capacitance Shift Rate of the piezoelectric ceramics increases with the raising of temperature, the dielectric
Ceramics -30 DEG C temperature coefficient of capacitance be 65% within, 85 DEG C of temperature coefficient of capacitance be -55% within, the dielectric ceramic
Capacitance Shift Rate reduces with the raising of temperature, the temperature coefficient of capacitance phase of the piezoelectric ceramics, dielectric ceramic at -30 DEG C ~ 85 DEG C
Mutually compensation.It is described mutually compensate for refer to when a certain temperature of the piezoelectric ceramics -30 DEG C of -85 DEG C of centres, if at this temperature its
Temperature coefficient of capacitance is that just, then the temperature coefficient of capacitance for the dielectric ceramic at such a temperature of arranging in pairs or groups be the dielectric ceramic born.
The chemical composition of the piezoelectric ceramics is Pb（ZraTi1-a）O3, wherein 0.45<A≤0.55 is burnt using solid phase method
Knot is made.
The chemical composition of the dielectric ceramic is Ba (Ti1-aZr a )O3, wherein 0.1<A≤0.4, using solid phase method
Sintering is made.
The piezoelectric ceramics and/or dielectric ceramic form for multi-layer ceramic capacitance.
The thickness of the dielectric ceramic is 0.1 ~ 0.9mm, and better choice is 0.4 ~ 0.7mm, can make technique and performance
It realizes and optimizes.
The first electrode layer 2 and the second electrode lay 4 are conductive metal electrode material, preferably silver or silver/palladium electrode.Reason
For upper, thickness of electrode is not limited specifically, it is preferable that thickness of electrode is 5 μm -30 μm.This is because if electricity
Pole thickness is too thin, may result in covering not exclusively, and electrode covers non-uniform problem, if thickness of electrode is too thick, on the one hand
Cost can be increased, still further aspect can also reduce the performance of whole piezoelectric ceramic vibrator device.
It is -3% ~+3% that the temperature, which stablizes piezoelectric ceramic vibrator in -30 DEG C ~+85 DEG C of Capacitance Shift Rate,.
Embodiment 1：
It is -34% that piezoelectric ceramics, which be rate in -30 DEG C of appearance temperature variation, and it be rate is+22% to change in+85 DEG C of appearance temperature；Dielectric
Ceramics -30 DEG C temperature coefficient of capacitance be 35% ,+85 DEG C appearance temperature variation be rate be -23%, dielectric ceramic thickness be 0.2mm,
The piezoelectric ceramics is single-layer ceramic, and the dielectric ceramic forms for single-layer ceramic capacitance, and the first, second electrode layer is silver-colored electricity
Pole, thickness are 5 microns, and temperature is made as required and stablizes piezoelectric composite ceramics oscillator.
Embodiment 2：
It is -15% that piezoelectric ceramics, which be rate in -30 DEG C of appearance temperature variation, and it be rate is+35% to change in+85 DEG C of appearance temperature；Dielectric
Ceramics -30 DEG C temperature coefficient of capacitance be 55% ,+85 DEG C appearance temperature variation be rate be -65%, dielectric ceramic thickness be 0.1mm,
The piezoelectric ceramics is single-layer ceramic, and the dielectric ceramic is that multi-layer ceramic capacitance forms, the first, second electrode layer be it is silver-colored/
Palladium electrode, thickness are 20 microns, and temperature is made as required and stablizes piezoelectric composite ceramics oscillator.
Embodiment 3：
It is -35% that piezoelectric ceramics, which be rate in -30 DEG C of appearance temperature variation, and it be rate is+25% to change in+85 DEG C of appearance temperature；Dielectric
Ceramics -30 DEG C temperature coefficient of capacitance be 15% ,+85 DEG C appearance temperature variation be rate be -10%, dielectric ceramic thickness be 0.6,
Mm, the piezoelectric ceramics are single-layer ceramic, and the dielectric ceramic forms for multi-layer ceramic capacitance, and first electrode layer is silver/palladium electricity
Pole, the second electrode lay are silver electrode, and thickness is 10 microns, and temperature is made as required and stablizes piezoelectric composite ceramics oscillator.
Embodiment 4：
It is -25% that piezoelectric ceramics, which be rate in -30 DEG C of appearance temperature variation, and it be rate is+25% to change in+85 DEG C of appearance temperature；Dielectric
Ceramics -30 DEG C temperature coefficient of capacitance be 20% ,+85 DEG C appearance temperature variation be rate be -10%, dielectric ceramic thickness be 0.9mm,
The piezoelectric ceramics is single-layer ceramic, and the dielectric ceramic forms for multi-layer ceramic capacitance, and the first, second electrode layer is silver-colored electricity
Pole, thickness are 30 microns, and temperature is made as required and stablizes piezoelectric composite ceramics oscillator.
Comparative example 1：
It is -25% that piezoelectric ceramics, which be rate in -30 DEG C of appearance temperature variation, and it be rate is+25% to change in+85 DEG C of appearance temperature；Dielectric
Ceramics -30 DEG C temperature coefficient of capacitance be 35% ,+85 DEG C appearance temperature variation be rate be -75%, dielectric ceramic thickness be 0.7mm,
The piezoelectric ceramics is single-layer ceramic, and the dielectric ceramic forms for single-layer ceramic capacitance, and the first, second electrode layer is silver-colored electricity
Pole, piezoelectric ceramic thickness are 5 microns, and temperature is made as required and stablizes piezoelectric composite ceramics oscillator.
Comparative example 2：
Using with the piezoelectric ceramics and dielectric ceramic composition, the identical component of content in embodiment 2, after mixing altogether
It burns, obtains composite piezoelectric ceramic, as required by silver/palladium electrode, electrode layers thickness is 20 microns, and temperature is made and stablizes Piezoelectric anisotropy
Ceramic vibrator.
Table 1 is the performance parameter table of embodiment 1-3 and comparative example 1,2 piezoelectric ceramic vibrator of comparative example
The performance parameter of piezoelectric ceramic vibrator in 1 embodiment and comparative example of table
The temperature coefficient of capacitance of embodiment 1-3 and the piezoelectric ceramics in comparative example 1 be ± 35% within, can from table 1
Go out, piezoelectric ceramic vibrator minor structure using the present invention, at the top of it or after bottom fixation dielectric ceramic, the appearance Wen Te of piezoelectric ceramics
Property is significantly improved, and significantly declining does not occur yet in the performance of piezoelectric ceramics itself.Comparative example 1 is to hold temperature characteristics to become
Change larger dielectric ceramic it is compound after piezoelectric ceramic vibrator performance parameter, it can be seen that temperature coefficient of capacitance is too high or too low
Dielectric ceramic is unsatisfactory for the requirement in the present invention.Comparative example 2 be to be formed with piezoelectric ceramics and dielectric ceramic in embodiment 2,
The identical component of content, composite piezoelectric ceramic made from cofiring, is made stable piezoelectric composite ceramics and shakes as required after mixing
Its performance is detected after son, as a result as described in comparative example 2 in table 1.Obviously, by compound between simple component, and
It can not achieve the technical purpose of the present invention.
The present invention compared with the prior art, breaks traditional be modified to ceramic component to improve the way of its performance
Diameter by using novel structure design, and determines the performance requirement for being applicable in the piezoelectric ceramics and dielectric ceramic of the present invention,
List a kind of component selection.The new structural piezoelectric ceramic vibrator is on the basis of keeping good piezoelectric property, Rong Wen
Coefficient is greatly improved, and is greatly improved piezoelectric property and reliability that reversing automobile assists probe, is expanded the application range of product, can
To be widely used in the automobile application of higher use environment requirement.
The present invention passes through the compound thickness of the dielectric ceramic that improved compared to Chinese patent CN201610072538.2
Degree, reduces technology difficulty and defect rate, reduces enterprise's production cost.And it also has surprisingly found that, pressure provided by the invention
The appearance temperature characteristics of electroceramics oscillator entirety do not occur deterioration, have good appearance temperature in -30 DEG C ~+85 DEG C to realize
Variation coefficient, at+85 DEG C, Capacitance Shift Rate is controlled+3%, at -30 DEG C, technology of the Capacitance Shift Rate control -3%
Effect.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God and any modification made within principle, equivalent replacement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of temperature stablizes piezoelectric composite ceramics oscillator, which is characterized in that including：
Piezoelectric ceramics is formed with first electrode layer on the surface at the piezoelectric ceramics both ends；
Dielectric ceramic is formed with the second electrode lay on the surface at the dielectric ceramic both ends；
First exit, first exit and the first electrode layer of the piezoelectric ceramics and dielectric ceramic homonymy, the second electricity
Pole layer is in close contact；
The first electrode layer of second exit, second exit and the piezoelectric ceramics and another homonymy of dielectric ceramic, the
Two electrode layers are in close contact；
Wherein, the temperature coefficient of capacitance of the piezoelectric ceramics is within -35%, in 85 DEG C of appearance temperature in -30 DEG C of temperature coefficient of capacitance
Change rate be+35% within, the Capacitance Shift Rate of the piezoelectric ceramics increases with the raising of temperature, the dielectric ceramic-
30 DEG C of temperature coefficient of capacitance is within+65%, is the capacity of the dielectric ceramic within -55% in 85 DEG C of temperature coefficient of capacitance
Change rate reduces with the raising of temperature, and the piezoelectric ceramics, dielectric ceramic are mutually complementary in -30 DEG C~85 DEG C of temperature coefficient of capacitance
It repays；
The thickness of the dielectric ceramic is 0.1~0.9mm.
2. a kind of temperature according to claim 1 stablizes piezoelectric composite ceramics oscillator, it is characterised in that：The piezoelectric ceramics
Chemical composition be Pb (ZraTi1-a)O3, wherein 0.45<a≤0.55.
3. a kind of temperature according to claim 1 stablizes piezoelectric composite ceramics oscillator, it is characterised in that：The dielectric ceramic
Chemical composition be Ba (Ti1-aZra)O3, wherein 0.1<a≤0.4.
4. a kind of temperature according to claim 1 stablizes piezoelectric composite ceramics oscillator, it is characterised in that：The dielectric ceramic
Thickness be 0.4~0.7mm.
5. a kind of temperature according to claim 1 stablizes piezoelectric composite ceramics oscillator, it is characterised in that：The first electrode
Layer and the second electrode lay are metal electrodes.
6. a kind of temperature according to claim 5 stablizes piezoelectric composite ceramics oscillator, it is characterised in that：The metal electrode
It is one kind in silver electrode or silver/palladium electrode.
7. stablizing piezoelectric composite ceramics oscillator according to a kind of temperature of claim 1-6 any one of them, it is characterised in that：It is described
Piezoelectric ceramics is single-layer ceramic, and dielectric ceramic forms for single-layer or multi-layer ceramic condenser.
8. a kind of temperature according to claim 7 stablizes piezoelectric composite ceramics oscillator, it is characterised in that：The temperature is stablized
Piezoelectric ceramic vibrator is -3%~+3% in -30 DEG C~+85 DEG C of Capacitance Shift Rate.
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| JPH0779022A (en) * | 1993-09-08 | 1995-03-20 | Unisia Jecs Corp | Piezoelectric device |
| JPH0779023A (en) * | 1993-09-08 | 1995-03-20 | Unisia Jecs Corp | Piezoelectric device |
| CN2459760Y (en) * | 2000-11-16 | 2001-11-14 | 浙江嘉康电子股份有限公司 | Ceramic casing chip type piezoelectric element |
| CN101019247A (en) * | 2004-09-13 | 2007-08-15 | 株式会社电装 | Piezoelectric actuator |
| CN102904546A (en) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | Piezoelectric acoustic wave resonator with adjustable temperature compensation capability |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140292152A1 (en) * | 2013-04-01 | 2014-10-02 | Cymatics Laboratories Corp. | Temperature compensating electrodes |
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2016
- 2016-03-08 CN CN201610129884.XA patent/CN105826461B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0779022A (en) * | 1993-09-08 | 1995-03-20 | Unisia Jecs Corp | Piezoelectric device |
| JPH0779023A (en) * | 1993-09-08 | 1995-03-20 | Unisia Jecs Corp | Piezoelectric device |
| CN2459760Y (en) * | 2000-11-16 | 2001-11-14 | 浙江嘉康电子股份有限公司 | Ceramic casing chip type piezoelectric element |
| CN101019247A (en) * | 2004-09-13 | 2007-08-15 | 株式会社电装 | Piezoelectric actuator |
| CN102904546A (en) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | Piezoelectric acoustic wave resonator with adjustable temperature compensation capability |
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