CN105789006A - Focusing ring with adjustable height and height adjustment method thereof - Google Patents
Focusing ring with adjustable height and height adjustment method thereof Download PDFInfo
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- CN105789006A CN105789006A CN201410823652.5A CN201410823652A CN105789006A CN 105789006 A CN105789006 A CN 105789006A CN 201410823652 A CN201410823652 A CN 201410823652A CN 105789006 A CN105789006 A CN 105789006A
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Abstract
The invention discloses a focusing ring assembly with an adjustable height. The focusing ring assembly is of an annular structure and comprises an insulation ring, an external focusing ring, an internal focusing ring and an elastic ring, wherein the insulation ring is arranged on a base extension part, the external focusing ring is arranged above the insulation ring and sleeves an outer side wall of a wafer in an encircling way, the internal focusing ring is arranged on the insulation ring, the inner diameter of the internal focusing ring is smaller than the diameter of the wafer, the external diameter of the internal focusing ring is smaller than the inner diameter of the external focusing ring so that at least one part of the internal focusing ring is arranged within an edge of the lower surface of the wafer, the elastic ring is arranged between the external focusing ring and the insulation ring, is hollow and can be inflated, and the height of the external focusing ring is adjusted by changing the pressure of gas in the elastic ring. The invention also discloses a height adjustment method of the focusing ring. By pneumatic adjustment of the longitudinal height of the focusing ring, the purpose of changing a plasma sheath is achieved.
Description
Technical field
The present invention relates to semiconductor processing technology field, be specifically related to a kind of Height Adjustable focusing ring and height adjusting method thereof.
Background technology
Along with the prolongation of etching technics time, plasma etching focusing ring surface also can be etched and consume.Focusing ring apparent height reduces, and the plasma sheath above it moves down, and silicon chip edge partial etching technique changes.It is desirable to focusing ring can move in vertical direction, when it consumes apparent height reduction because of etching, it is possible to make up apparent height by vertically moving adjustment.Prior art generally adopts cylinder or motor to drive an elevating lever to realize the driving up and down to focusing ring, but these mechanisms can bring a lot of problem, cylinder or motor take much room, it is that the mechanisms such as bottom electrode cannot place below focusing ring, need additionally to arrange a space under the pedestal placing semiconductor chip, this provides for improved design and the difficulty safeguarded.And focusing ring is etched, the speed consumed is very slow, and the etching carried out dozens or even hundreds of hour just needs to adjust the height of a focusing ring, so the elevating mechanism utilization rate that these high costs are arranged is very low, loses more than gain.Additionally, also may require that arrange multiple hole allowing elevating lever traverse on pedestal to realize the lifting to focusing ring, these holes additionally arranged can cause rf electric field at the skewness of surface of semiconductor chip.It is very clean owing to plasma treatment needing, can not there is the generation of particulate matter, so these elevating levers can not rub generation granule mutually with the sidewall of hole, so namely being gradually risen to the process of disengaging dead ring at focusing ring by the position of lower section non-conductive ring support from extreme lower position, the electromotive force of focusing ring can be accumulated the electromotive force formed from being one with dead ring identical change by negative charge plasma on focusing ring, there is huge electric potential difference between the two, and only it is saved as only small vacuum gap between the two, the generation of this meeting guiding discharge phenomenon.Electric discharge phenomena can cause that semiconductor chip is damaged, so to do one's utmost to avoid in plasma treatment.The driving device that these problems are all prior aries is insurmountable, so needing a kind of new easy driving device of design to realize the trace of focusing ring is driven, is also avoided that generation electric discharge phenomena simultaneously.
Summary of the invention
It is an object of the invention to provide a kind of Height Adjustable focusing ring and height adjusting method thereof, by the longitudinally height of pneumatic adjustment focusing ring, it is achieved change the purpose of plasma sheath.
In order to achieve the above object, the present invention is achieved through the following technical solutions: a kind of Height Adjustable focusing ring assembly, it is set to loop configuration, being arranged in a plasma etch, plasma etch includes a pedestal, and base central overlying regions supports wafer, pedestal periphery also includes an annular extension around described wafer, the upper surface of described extension, lower than the lower surface of described wafer, is characterized in, described focusing ring assembly comprises:
One dead ring, is arranged on the top of described extension；
One exterior focusing ring, is arranged on the top of described dead ring, around the lateral wall being set in described wafer,；
One internal focusing ring, is arranged on the top of described dead ring, and its internal diameter is less than described brilliant diameter of a circle, and its external diameter is less than the internal diameter of described exterior focusing ring, within making described internal focusing ring be at least partially disposed at the edge of wafer lower surface；
Elastic ring, is arranged between described exterior focusing ring and described dead ring, be hollow and inflatable in described elastic ring, by changing the pressure of gas in elastic ring, and the height of adjustment exterior focusing ring.
Preferably, the material of described elastic ring is rubber.
Preferably, a stopper slot is offered at the top of described dead ring, and described elastic ring is arranged in described stopper slot.
Preferably, the material of described dead ring is pottery.
Preferably, the described pressure of gas in elastic ring that changes realizes by arranging an aerating device outside elastic ring.
Preferably, the described pressure of gas in elastic ring that changes realizes by arranging an attemperating unit outside elastic ring.
Preferably, the described pressure of gas in elastic ring that changes realizes by arranging an aerating device and an attemperating unit outside elastic ring simultaneously.
The invention also discloses a kind of focusing ring height adjusting method, be characterized in, utilizing above-mentioned focusing ring assembly to be etched technique, described method comprises the steps of
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, dead ring is arranged on the top of the extension of pedestal periphery；
S3, exterior focusing ring is arranged on the top of dead ring, around the lateral wall being set in described wafer；
S4, internal focusing ring is arranged on the top of dead ring, within making internal focusing ring be at least partially disposed at the edge of wafer lower surface；
S5, elastic ring is arranged between exterior focusing ring and dead ring；
S6, in plasma etch, perform etching technique；
S7, in etching technics, the consumption according to exterior focusing ring, regulate the longitudinally height of described exterior focusing ring；
Wherein, be hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment exterior focusing ring.
Preferably, the described pressure of gas in elastic ring that changes is to be realized by the aeration quantity of gas in change elastic ring.
Preferably, the described pressure of gas in elastic ring that changes is to be realized by the temperature of gas in change elastic ring.
It is preferably, described that to change the pressure of gas in elastic ring be realize by changing the aeration quantity of gas and the temperature of gas in elastic ring simultaneously.
Another technical scheme of the present invention discloses a kind of Height Adjustable focusing ring assembly, it is set to loop configuration, it is arranged in a plasma etch, plasma etch includes a pedestal, base central overlying regions supports wafer, and pedestal periphery also includes an annular extension around described wafer, and the upper surface of described extension is lower than the lower surface of described wafer, being characterized in, described focusing ring assembly comprises:
Dead ring once, is arranged on above described extension；
Dead ring on one, is arranged on the top of described lower dead ring；
One elastic ring, is arranged between described lower dead ring and described upper dead ring；
One focusing ring, is arranged on the top of described upper dead ring, and described focusing ring includes a main loop portion, around the lateral wall being set in described wafer, also includes an extension, within being at least partially disposed at the edge of wafer lower surface, wherein
Be hollow and inflatable in described elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment focusing ring.
It is preferred that the material of described elastic ring is rubber.
It is preferred that a stopper slot is offered at the top of described lower dead ring, described elastic ring is arranged in described stopper slot.
It is preferred that a stopper slot is offered in the bottom of described upper dead ring, described elastic ring is arranged in described stopper slot.
It is preferred that the bottom of described upper dead ring offer stopper slot corresponding to the top of lower dead ring, described elastic ring is arranged in described stopper slot.
It is preferred that the material of the material of described upper dead ring and lower dead ring is pottery.
It is preferred that the described pressure of gas in elastic ring that changes realizes by arranging an aerating device outside elastic ring.
It is preferred that the described pressure of gas in elastic ring that changes realizes by arranging an attemperating unit outside elastic ring.
It is preferred that the described pressure of gas in elastic ring that changes realizes by arranging an aerating device and an attemperating unit outside elastic ring.
The invention also discloses a kind of focusing ring height adjusting method, be characterized in, utilizing above-mentioned focusing ring assembly to be etched technique, described method comprises the steps of
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, lower dead ring is arranged on the top of pedestal extension；
S3, upper dead ring is arranged on the top of lower dead ring；
S4, elastic ring is arranged between lower dead ring and upper dead ring；
S5, focusing ring being arranged on the top of upper dead ring, wherein, the main loop portion of focusing ring is around the lateral wall being set in wafer, within the extension of focusing ring is at least partially disposed at the edge of wafer lower surface；
S6, in plasma etch, perform etching technique；
S7, in etching technics, the consumption according to focusing ring, regulate the longitudinally height of described focusing ring；
Wherein, be hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment focusing ring.
It is preferred that the described pressure of gas in elastic ring that changes is to be realized by the aeration quantity of gas in change elastic ring.
It is preferred that the described pressure of gas in elastic ring that changes is to be realized by the temperature of gas in change elastic ring.
It is preferred that described, to change the pressure of gas in elastic ring be realize by changing the aeration quantity of gas and the temperature of gas in elastic ring simultaneously.
A kind of Height Adjustable focusing ring of the present invention and height adjusting method thereof compared with prior art have the advantage that the height of focusing ring can regulate, it is achieved change the purpose of plasma sheath, adopt pneumatic mode to realize, simple in construction, it is achieved simple and easy；Focusing ring is separate type, it is possible to compensate etching technics drift in time, better realizes etching repeatability；By offering stopper slot on dead ring, fixing elastic ring.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of focusing ring assembly in one embodiment of the invention；
Fig. 2 is the overall structure schematic diagram of focusing ring assembly in another embodiment of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
As shown in Figure 1, a kind of Height Adjustable focusing ring assembly, it is set to loop configuration, being arranged in a plasma etch, plasma etch includes a pedestal 101, and pedestal 101 central area upper support has wafer 102, pedestal 101 periphery also includes an annular extension around described wafer 102, the upper surface of described extension is lower than the lower surface of described wafer 102, and described focusing ring assembly comprises: a dead ring 1031, is arranged on above described extension；One exterior focusing ring 1032, is arranged on the top of described dead ring 1031, around the lateral wall being set in described wafer 102；One internal focusing ring 1033, it is arranged on the top of described dead ring 1031, its internal diameter is less than the diameter of described wafer 102, its external diameter is less than the internal diameter of described exterior focusing ring 1032, within making described internal focusing ring 1033 be at least partially disposed at the edge of wafer 102 lower surface, internal focusing ring 1033 maintains static, thus not affecting plasma sheath 104；Elastic ring 1034, is arranged between described exterior focusing ring 1032 and described dead ring 1031, be hollow and inflatable in described elastic ring 1034, by changing the pressure of gas in elastic ring 1034, and the height of adjustment exterior focusing ring 1032.Changing the pressure of gas in elastic ring 1034, it is possible to by one aerating device of arranged outside at elastic ring 1034, aerating device, to insufflation gas in elastic ring 1034, changes pressure, thus reaching to regulate the purpose of the height of exterior focusing ring 1032.In one alternate embodiment by the attemperating unit in an outside being arranged on elastic ring 1034, change the temperature of gas in elastic ring 1034, thus changing gas pressure, thus reaching to regulate the purpose of the height of exterior focusing ring 1032.Another alternative embodiment of the invention can arrange aerating device and attemperating unit simultaneously, reach to change the purpose of gas pressure.Aerating device of the present invention can be the pipeline of arbitrarily arrangement, as long as can be just passable with the space gases UNICOM in elastic ring, such pipeline can arbitrarily devised pipeline as required, cause Machine Design and the space of later maintenance difficulty around meeting, and can reduce the interference of plasma distribution above pedestal.
In the preferred embodiment, the material selection pottery of dead ring 1031, the material selection rubber of elastic ring 1034.In order to better fix elastic ring 1034, offer a stopper slot at the top of dead ring 1031, elastic ring 1034 is arranged in described stopper slot.
In order to better describe the operation principle of focusing ring assembly, being elaborated by a kind of focusing ring height adjusting method, described method comprises the steps of
S1, wafer 102 to be etched is placed into above the upper surface of pedestal 101 central area；
S2, dead ring 1031 is arranged on above the extension of pedestal 101 periphery；
S3, exterior focusing ring 1032 is arranged on the top of dead ring 1031, around the lateral wall being set in described wafer 102；
S4, internal focusing ring 1033 is arranged on the top of dead ring 1031, within making internal focusing ring 1033 be at least partially disposed at the edge of wafer 102 lower surface；
S5, elastic ring 1034 is arranged between exterior focusing ring 1032 and dead ring 1031；
S6, in plasma etch, perform etching technique；
S7, in etching technics, the consumption according to exterior focusing ring 1032, regulate the longitudinally height of described exterior focusing ring 1032, thus realizing changing the purpose of plasma sheath 104；
Wherein, be hollow and inflatable in elastic ring 1034, by changing the pressure of gas in elastic ring 1034, the height of adjustment exterior focusing ring 1032.It is described that to change the pressure of gas in elastic ring 1034 be by changing the aeration quantity of gas in elastic ring 1034 and/or changing the temperature of gas in elastic ring 1034 and realize.
As shown in Figure 2 in another embodiment of the present invention, it is contemplated that if there being gap to occur between focusing ring and dead ring, potential difference is likely to cause other problems therebetween.Therefore dead ring can be separated into two-piece, elastic ring is positioned in wherein.
A kind of Height Adjustable focusing ring assembly, it is set to loop configuration, it is arranged in a plasma etch, plasma etch includes a pedestal 201, pedestal 201 central area upper support has wafer 202, pedestal 201 periphery also to include an annular extension around described wafer 202, and the upper surface of described extension is lower than the lower surface of described wafer 202, described focusing ring assembly comprises: dead ring 2031 once, is arranged on above described extension；Dead ring 2032 on one, are arranged on the top of described lower dead ring 2031；One elastic ring 2033, is arranged between described lower dead ring 2031 and described upper dead ring 2032；One focusing ring, it is arranged on the top of described upper dead ring 2032, described focusing ring includes a main loop portion 2034, around the lateral wall being set in described wafer 202, described focusing ring also includes an extension 2035, within being at least partially disposed at the edge of wafer 202 lower surface, do not affect plasma sheath 204；Wherein, be hollow and inflatable in described elastic ring 2033, by changing the pressure of gas in elastic ring 2033, the height of adjustment focusing ring.Changing the pressure of gas in elastic ring 2033, it is possible to by one aerating device of arranged outside at elastic ring 2033, aerating device, to insufflation gas in elastic ring 2033, changes pressure, thus reaching to regulate the purpose of the height of focusing ring.In one alternate embodiment by the attemperating unit in an outside being arranged on elastic ring 2033, change the temperature of gas in elastic ring 2033, thus changing gas pressure, thus reaching to regulate the purpose of the height of focusing ring.Another alternative embodiment of the invention can arrange aerating device and attemperating unit simultaneously, reach to change the purpose of gas pressure.Owing to upper dead ring 2032, lower dead ring 2031 are all made up of insulant, it is preferable that adopt pottery, so before and after focusing ring lifting, the electromotive force of the assembly of focusing ring and upper dead ring 2032 remains constant, it is possible to avoid the generation of electric discharge phenomena.
Aerating device of the present invention can be the pipeline of arbitrarily arrangement, as long as can be just passable with the space gases UNICOM in elastic ring 2033, such pipeline can arbitrarily devised pipeline as required, cause Machine Design and the space of later maintenance difficulty around meeting, and can reduce the interference of plasma distribution above pedestal.
The material of elastic ring 2033 of the present invention is preferably fluorubber, it is advantageous to so can resist corrosive etching gas in plasma etch for FFKM, such as the corrosion of fluorocarbons.Owing to elastic ring 2033 will not with peripheral parts generation mechanical friction so also would not produce particle contamination in upwards expansion and retracted downward process.Simultaneously elastic ring 2033 can be coated with conductive coating at outer surface or inner surface of pipeline, so can reduce focusing ring and climb away after the upper dead ring 2032 in lower section electric potential difference between the two, it is to avoid electric discharge (arcing) phenomenon produces.
In order to better fix elastic ring 2033, offer a stopper slot at the top of lower dead ring 2031, elastic ring 2033 is arranged in described stopper slot.In one alternate embodiment, offer a stopper slot in the bottom of upper dead ring 2032, elastic ring 2033 is arranged in described stopper slot.In another alternative embodiment, simultaneously corresponding with the top of lower dead ring 2031 in the bottom of upper dead ring 2032 can offer stopper slot, elastic ring 2033 is arranged in described stopper slot.
In order to better describe the operation principle of focusing ring assembly, being elaborated by a kind of focusing ring height adjusting method, described method comprises the steps of
S1, wafer 202 to be etched is placed into above the upper surface of pedestal 201 central area；
S2, lower dead ring 2031 is arranged on the top of pedestal 201 extension；
S3, upper dead ring 2032 is arranged on the top of lower dead ring；
S4, elastic ring 2033 is arranged between lower dead ring 2031 and upper dead ring 2032；
S5, focusing ring being arranged on the top of upper dead ring, wherein, the main loop portion 2034 of focusing ring is around the lateral wall being set in wafer, within focusing on the edge that extension 2035 is at least partially disposed at wafer 202 lower surface；
S6, in plasma etch, perform etching technique；
S7, in etching technics, the consumption according to focusing ring, regulate the longitudinally height of described focusing ring, thus realizing changing the purpose of plasma sheath 204；
Wherein, be hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment focusing ring.Changing the pressure of gas in elastic ring 2033, it is possible to by one aerating device of arranged outside at elastic ring 1034, aerating device, to insufflation gas in elastic ring 2033, changes pressure, thus reaching to regulate the purpose of the height of focusing ring.In one alternate embodiment by the attemperating unit in an outside being arranged on elastic ring 2033, change the temperature of gas in elastic ring 2033, thus changing gas pressure, thus reaching to regulate the purpose of the height of focusing ring.Another alternative embodiment of the invention can arrange aerating device and attemperating unit simultaneously, reach to change the purpose of gas pressure.
Although present disclosure has been made to be discussed in detail already by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read foregoing, multiple amendment and replacement for the present invention all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (24)
1. focusing ring assembly one kind Height Adjustable, it is set to loop configuration, it is arranged in a plasma etch, plasma etch includes a pedestal, base central overlying regions supports wafer, and pedestal periphery also includes an annular extension around described wafer, and the upper surface of described extension is lower than the lower surface of described wafer, it is characterized in that, described focusing ring assembly comprises:
One dead ring, is arranged on above described extension；
One exterior focusing ring, is arranged on the top of described dead ring, around the lateral wall being set in described wafer；
One internal focusing ring, is arranged on the top of described dead ring, and its internal diameter is less than described brilliant diameter of a circle, and its external diameter is less than the internal diameter of described exterior focusing ring, within making described internal focusing ring be at least partially disposed at the edge of wafer lower surface；
Elastic ring, is arranged between described exterior focusing ring and described dead ring, be hollow and inflatable in described elastic ring, by changing the pressure of gas in elastic ring, and the height of adjustment exterior focusing ring.
2. focusing ring assembly as claimed in claim 1, it is characterised in that the material of described elastic ring is rubber.
3. focusing ring assembly as claimed in claim 1 a, it is characterised in that stopper slot is offered at the top of described dead ring, and described elastic ring is arranged in described stopper slot.
4. focusing ring assembly as claimed in claim 1, it is characterised in that the material of described dead ring is pottery.
5. focusing ring assembly as claimed in claim 1, it is characterised in that the described pressure of gas in elastic ring that changes realizes by arranging an aerating device outside elastic ring.
6. focusing ring assembly as claimed in claim 1, it is characterised in that the described pressure of gas in elastic ring that changes realizes by arranging an attemperating unit outside elastic ring.
7. focusing ring assembly as claimed in claim 1, it is characterised in that the described pressure of gas in elastic ring that changes realizes by arranging an aerating device and an attemperating unit outside elastic ring simultaneously.
8. a focusing ring height adjusting method, it is characterised in that utilizing the focusing ring assembly described in the claims 1-7 any one claim to be etched technique, described method comprises the steps of
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, dead ring is arranged on the top of the extension of pedestal periphery；
S3, exterior focusing ring is arranged on the top of dead ring, around the lateral wall being set in described wafer；
S4, internal focusing ring is arranged on the top of dead ring, within making internal focusing ring be at least partially disposed at the edge of wafer lower surface；
S5, elastic ring is arranged between exterior focusing ring and dead ring；
S6, in plasma etch, perform etching technique；
S7, in etching technics, the consumption according to exterior focusing ring, regulate the longitudinally height of described exterior focusing ring；
Wherein, be hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment exterior focusing ring.
9. focusing ring height adjusting method as claimed in claim 8, it is characterised in that the described pressure of gas in elastic ring that changes is to be realized by the aeration quantity of gas in change elastic ring.
10. focusing ring height adjusting method as claimed in claim 8, it is characterised in that the described pressure of gas in elastic ring that changes is to be realized by the temperature of gas in change elastic ring.
11. focusing ring height adjusting method as claimed in claim 8, it is characterised in that described to change the pressure of gas in elastic ring be realize by changing the aeration quantity of gas and the temperature of gas in elastic ring simultaneously.
12. focusing ring assembly one kind Height Adjustable, it is set to loop configuration, it is arranged in a plasma etch, plasma etch includes a pedestal, base central overlying regions supports wafer, and pedestal periphery also includes an annular extension around described wafer, and the upper surface of described extension is lower than the lower surface of described wafer, it is characterized in that, described focusing ring assembly comprises:
Dead ring once, is arranged on above described extension；
Dead ring on one, is arranged on the top of described lower dead ring；
One elastic ring, is arranged between described lower dead ring and described upper dead ring；
One focusing ring, is arranged on the top of described upper dead ring, and described focusing ring includes a main loop portion, around the lateral wall being set in described wafer, also includes an extension, within being at least partially disposed at the edge of wafer lower surface, wherein
Be hollow and inflatable in described elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment focusing ring.
13. focusing ring assembly as claimed in claim 12, it is characterised in that the material of described elastic ring is rubber.
14. focusing ring assembly as claimed in claim 12 a, it is characterised in that stopper slot is offered at the top of described lower dead ring, and described elastic ring is arranged in described stopper slot.
15. focusing ring assembly as claimed in claim 12 a, it is characterised in that stopper slot is offered in the bottom of described upper dead ring, and described elastic ring is arranged in described stopper slot.
16. focusing ring assembly as claimed in claim 12, it is characterised in that the bottom of described upper dead ring offer stopper slot corresponding to the top of lower dead ring, described elastic ring is arranged in described stopper slot.
17. focusing ring assembly as claimed in claim 12, it is characterised in that the material of described upper dead ring and the material of lower dead ring are pottery.
18. focusing ring assembly as claimed in claim 12, it is characterised in that the described pressure of gas in elastic ring that changes realizes by arranging an aerating device outside elastic ring.
19. focusing ring assembly as claimed in claim 12, it is characterised in that the described pressure of gas in elastic ring that changes realizes by arranging an attemperating unit outside elastic ring.
20. focusing ring assembly as claimed in claim 12, it is characterised in that the described pressure of gas in elastic ring that changes realizes by arranging an aerating device and an attemperating unit outside elastic ring simultaneously.
21. a focusing ring height adjusting method, it is characterised in that utilizing the focusing ring assembly described in the claims 12-20 any one claim to be etched technique, described method comprises the steps of
S1, wafer to be etched is placed into above the upper surface in base central region；
S2, lower dead ring is arranged on the top of pedestal extension；
S3, upper dead ring is arranged on the top of lower dead ring；
S4, elastic ring is arranged between lower dead ring and upper dead ring；
S5, focusing ring being arranged on the top of upper dead ring, wherein, the main loop portion of focusing ring is around the lateral wall being set in wafer, within the extension of focusing ring is at least partially disposed at the edge of wafer lower surface；
S6, in plasma etch, perform etching technique；
S7, in etching technics, the consumption according to focusing ring, regulate the longitudinally height of described focusing ring；
Wherein, be hollow and inflatable in elastic ring, by changing the pressure of gas in elastic ring, the height of adjustment focusing ring.
22. focusing ring height adjusting method as claimed in claim 21, it is characterised in that the described pressure of gas in elastic ring that changes is to be realized by the aeration quantity of gas in change elastic ring.
23. focusing ring height adjusting method as claimed in claim 21, it is characterised in that the described pressure of gas in elastic ring that changes is to be realized by the temperature of gas in change elastic ring.
24. focusing ring height adjusting method as claimed in claim 21, it is characterised in that described to change the pressure of gas in elastic ring be realize by changing the aeration quantity of gas and the temperature of gas in elastic ring simultaneously.
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| CN111430206A (en) * | 2019-01-09 | 2020-07-17 | 东京毅力科创株式会社 | Plasma processing apparatus and etching method |
| CN111863578A (en) * | 2019-04-28 | 2020-10-30 | 中微半导体设备(上海)股份有限公司 | Plasma processing equipment |
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| CN104217914A (en) * | 2013-05-31 | 2014-12-17 | 中微半导体设备(上海)有限公司 | Plasma processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430206A (en) * | 2019-01-09 | 2020-07-17 | 东京毅力科创株式会社 | Plasma processing apparatus and etching method |
| CN111863578A (en) * | 2019-04-28 | 2020-10-30 | 中微半导体设备(上海)股份有限公司 | Plasma processing equipment |
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| CN105789006B (en) | 2017-10-17 |
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