CN101754565A - Electrode component and plasma treatment equipment using electrode component - Google Patents
Electrode component and plasma treatment equipment using electrode component Download PDFInfo
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- CN101754565A CN101754565A CN200810227983A CN200810227983A CN101754565A CN 101754565 A CN101754565 A CN 101754565A CN 200810227983 A CN200810227983 A CN 200810227983A CN 200810227983 A CN200810227983 A CN 200810227983A CN 101754565 A CN101754565 A CN 101754565A
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- clamping device
- electrostatic clamping
- impedance matching
- electrode assemblie
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Abstract
The invention provides an electrode component, comprises an impedance matching ring, an edge ring, a focusing ring and an insulating ring. In the invention, the impedance matching ring has a structure and a material which are close to or the same as those of a static holding device, so electric fields and temperatures at the edge and in the centre of a workpiece can be effectively matched and uniformly distributed. The edge ring, the focusing ring, an electrode protective ring and the insulating cooperate with one another, so the electric fields and the temperatures in the centre position and at the edge position of the workpiece can be adjusted, the static holding device are effectively protected against the bombardment by plasmas and the service life of equipment can be prolonged. Besides, the invention also provides plasma treatment equipment which adopts the electrode component.
Description
Technical field
The present invention relates to microelectronics technology, particularly, relate to a kind of electrode assemblie and use the apparatus for processing plasma of this electrode assemblie.
Background technology
Along with the extensive use of microelectric technique in activity in production, large scale integrated circuit has become the main flow trend of electronic industry development, and production/working ability that semiconductor production enterprise must improve constantly self could adapt to the new market demand.
At present, many using plasmas of microelectronics technology treatment facility is processed/is handled semiconductor device.See also a kind of apparatus for processing plasma illustrated in fig. 1, in reaction chamber 1, be provided with electrostatic clamping device 4, it is used for fixing the workpiece to be processed 5 such as wafer etc., and bottom electrode 3 places under the electrostatic clamping device 4, and top electrode 2 is positioned at the top of chamber 1 and opposed with bottom electrode 3.The technical process of this equipment is as follows: in process gas injecting chamber 1, under the exciting of top electrode 2 and bottom electrode 3 radio-frequency powers, process gas is excited and forms plasma zone 6, finishes technological operations such as the etching of workpiece 5 and/or deposits by this plasma zone 6.
Yet in actual applications, the Electric Field Distribution at workpiece centre and edge often is in uneven state, and then has influence on the uniformity of process results.Therefore, those skilled in the art are provided with one group of electrode assemblie around electrostatic clamping device, be used to mate the electric field of the edge of work and center and make it to be tending towards even.For example, Fig. 2 just illustrates a kind of like this electrode assemblie: the electrostatic clamping device 154 that is positioned at central area, bottom electrode 152 top is used for fixing workpiece to be processed 160; Electrode assemblie is provided with around electrostatic clamping device 154, comprises edge ring 156 and impedance matching layer 158.Wherein, the impedance of impedance matching layer 158 can be adjusted, and uses so that the impedance phase of workpiece 160 edges and center mates, and then obtains equally distributed electric field in the edge and the center of workpiece 160.
Although the problem of impedance matching has been considered in the design of above-mentioned electrode assemblie to a certain extent, it does not but consider the problem of temperature coupling.Yet in PLASMA PROCESSING, the Temperature Distribution on the workpiece also is one of key factor that influences process results and crudy in fact.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of electrode assemblie, in order to the electric field and the Temperature Distribution at effective coupling workpiece centre position and marginal position place.
In addition, the present invention also provides a kind of apparatus for processing plasma of using above-mentioned electrode assemblie, and it can mate the electric field and the Temperature Distribution at workpiece centre position and marginal position place equally effectively.
For this reason, the invention provides a kind of electrode assemblie that is provided with around electrostatic clamping device, electrostatic clamping device has matrix and is arranged at the top layer of matrix surface.Electrode assemblie provided by the invention comprises: the impedance matching ring, the top layer that it is provided with around electrostatic clamping device and has matrix and be arranged at matrix surface, the material of the material on impedance matching ring top layer and impedance matching cyclic group body is corresponding with the material of the material on electrostatic clamping device top layer and electrostatic clamping device matrix respectively, places the electric field and the Temperature Distribution of the workpiece on the electrostatic clamping device in order to coupling; Edge ring, it is provided with around electrostatic clamping device and is stacked and placed on the impedance matching ring, and in order to the electric field and the Temperature Distribution of adjustment edge of work position, and protection impedance matching ring is avoided the plasma bombardment of top; Focusing ring, it is arranged at the outside of impedance matching ring and edge ring, in order to adjust the Electric Field Distribution of edge of work position; Dead ring, it is positioned at the below of focusing ring and is provided with around electrostatic clamping device, uses so that electrostatic clamping device and surrounding environment electricity are isolated.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise reaction chamber and place its interior electrostatic clamping device, in reaction chamber, be provided with the electrode assemblie that the invention described above provides, place the electric field and the Temperature Distribution of the workpiece on the electrostatic clamping device in order to coupling around electrostatic clamping device.
The present invention has following beneficial effect:
Electrode assemblie provided by the invention, adopted the impedance matching ring all identical or close with the structure and material of electrostatic clamping device, like this, not only can obtain equally distributed electric field in workpiece centre position and marginal position place, can also effectively mate and control the Temperature Distribution at center position and marginal position place, thereby effectively improve process results, improve the workpiece crudy.
Apparatus for processing plasma provided by the invention, owing to adopted above-mentioned electrode assemblie provided by the invention, it can effectively mate and control equally the electric field at workpiece centre position and marginal position place and Temperature Distribution, and then effectively improve the workpiece crudy, and prolong the useful life of equipment.
In addition, in a preferred embodiment of the present invention, the dead ring periphery also is provided with electrode protection ring electrical ground, and it can the general protection electrostatic clamping device avoid the bombardment of plasma, thereby prolongs the useful life of equipment.
Description of drawings
Fig. 1 is a kind of apparatus for processing plasma that uses electrode assemblie;
Fig. 2 is a kind of structural representation of electrode assemblie; And
Fig. 3 is the structural representation of a specific embodiment of electrode assemblie provided by the invention.
Embodiment
In order to make those skilled in the art person understand technical scheme of the present invention better, electrode assemblie provided by the invention and the apparatus for processing plasma of using this electrode assemblie are described in detail below in conjunction with accompanying drawing.
See also Fig. 3, the electrostatic clamping device that is adopted in the specific embodiment of the present invention is an electrostatic chuck 8, it comprises matrix 9 and top layer 10 two parts, and the dielectric material of pottery, quartz, polyamide etc. is adopted on its top layer more than 10, is used to make the certain impedance of formation between bottom electrode and the plasma; The then many electric conducting materials by aluminium alloy or stainless steel etc. of the matrix 9 of electrostatic chuck 8 constitute, thereby can insert radio-frequency power supply and directly use as bottom electrode, also can utilize the heat conductivility of metal material that the temperature of workpiece 11 is controlled simultaneously.
Based on the architectural feature of above-mentioned electrostatic chuck 8, the invention provides a kind of electrode assemblie, can be used for mating the electric field and the Temperature Distribution of workpiece 11, comprise impedance matching ring 1, edge ring 4, focusing ring 5, dead ring 7 and electrode protection ring 6.Wherein, impedance matching ring 1 is provided with around electrostatic chuck 8 and has matrix 2 and be arranged at the top layer 3 on matrix 2 surfaces.
Be the temperature matching process that example specifies 1 pair of workpiece 11 edge of impedance matching ring and center below with the temperature-rise period.When needs heat, part heat directly conducts to the central area of its top layer 10 with heated parts 11 via the matrix 9 of electrostatic chuck 8, another part heat conducts to the fringe region of the top layer 3 of impedance matching ring 1 with heated parts again via matrix 9 conduction of electrostatic chuck 8 matrix 2 to impedance matching ring 1; Because the matrix 2 of impedance matching ring 1 and top layer 3 have thermal conductivity and the specific heat capacity close even identical with the matrix 9 of electrostatic chuck 8 and top layer 10, evenly heat up so the heating rate at the edge of work and center is consistent, thereby reach the purpose of mating temperature.Temperature-fall period similarly no longer describes in detail.
In addition, because the matrix 2 of impedance matching ring 1 and top layer 3 have the structure and material characteristic identical or close with the matrix 9 of electrostatic chuck 8 and top layer 10, so the two has identical or close impedance.Thereby can effectively mate the impedance of workpiece 11 edges and center, under perfect condition, even the impedance of workpiece 11 near zones is equated everywhere.
Edge ring 4 is provided with around electrostatic chuck 8 and is stacked and placed on the impedance matching ring 1, and in order to the electric field and the Temperature Distribution at adjustment workpiece 11 marginal position places, and protection impedance matching ring 1 is avoided the plasma bombardment of top.The material that edge ring 4 is adopted can be a kind of in pottery, quartzy, monocrystalline silicon and the polysilicon, and preferred scheme is to adopt and institute's processing work 11 identical materials, for example monocrystalline silicon or polysilicon.
Focusing ring 5 is arranged at the outside of impedance matching ring 1 and edge ring 4, and in order to adjust the Electric Field Distribution at workpiece 11 marginal position places, it adopts for example material such as pottery or quartz formation, in order to adjust the Electric Field Distribution at electrostatic chuck 8 edges.
Dead ring 7 is positioned at the below of focusing ring 5 and is provided with around electrostatic chuck 8, and it adopts the insulating material of pottery or insulating resin etc. to constitute, and uses so that electrostatic chuck 8 is isolated with the surrounding environment electricity.Here, surrounding environment refers near the cavity space the electrostatic chuck 8.
In addition, in the electrode assemblie provided by the invention, also comprise electrode protection ring 6, it is peripheral and electrical ground that it is positioned at dead ring 7, avoids plasma contamination in order to protection electrostatic chuck 8, and it for example can adopt conductive metallic material such as aluminum or aluminum alloy to constitute.At this moment, acting as of dead ring 7 isolated electrostatic chuck 8 and electrode protection ring 6 electricity.
Multilayer mechanism also can be arranged in the top layer 3 that it is pointed out that impedance matching ring 1 provided by the invention, and its thickness can be according to actual needs and increase or reduce, with so that the electric field coupling of workpiece 11 margin and centers is more accurate.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise reaction chamber and place its interior electrostatic chuck, in reaction chamber, be provided with electrode assemblie provided by the present invention, place the electric field and the Temperature Distribution of the workpiece on the electrostatic chuck in order to coupling around electrostatic chuck.
By above-mentioned execution mode as seen, the apparatus for processing plasma of electrode assemblie provided by the invention and this electrode assemblie of application, by adopting the impedance matching ring all close or identical with the structure and material of electrostatic chuck, can effectively mate and control the electric field of edge of work position and Temperature Distribution, so that the electric field at workpiece centre position and marginal position place and Temperature Distribution are tending towards even.In addition, cooperate other assembly, make and form required electric field and Temperature Distribution in the workpiece near zone, effectively protect electrostatic chuck to avoid the bombardment of plasma simultaneously with different materials, electric conductivity and heat-conductive characteristic.Therefore, electrode assemblie provided by the invention and the apparatus for processing plasma of using this electrode assemblie can effectively improve the workpiece crudy, and prolong service life of equipment.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (11)
1. electrode assemblie, it is provided with around electrostatic clamping device, and described electrostatic clamping device has matrix and is arranged at the top layer of matrix surface, it is characterized in that described electrode assemblie comprises:
The impedance matching ring, the top layer that it is provided with around electrostatic clamping device and has matrix and be arranged at matrix surface, the material on described impedance matching ring top layer and the material of impedance matching cyclic group body are corresponding with the material of the material on electrostatic clamping device top layer and electrostatic clamping device matrix respectively, place the electric field and the Temperature Distribution of the workpiece on the electrostatic clamping device in order to coupling;
Edge ring, it is provided with around electrostatic clamping device and is stacked and placed on the described impedance matching ring, and in order to adjusting the electric field and the Temperature Distribution of described edge of work position, and protection impedance matching ring is avoided the plasma bombardment of top;
Focusing ring, it is arranged at the outside of impedance matching ring and edge ring, in order to adjust the Electric Field Distribution of described edge of work position;
Dead ring, it is positioned at the below of described focusing ring and is provided with around described electrostatic clamping device, uses so that electrostatic clamping device and surrounding environment electricity are isolated.
2. electrode assemblie according to claim 1, it is characterized in that, described impedance matching ring skin-material has identical or close thermal conductivity and specific heat capacity with the electrostatic clamping device skin-material, and described impedance matching cyclic group body material has identical or close thermal conductivity and specific heat capacity with the electrostatic clamping device basis material.
3. electrode assemblie according to claim 1 is characterized in that, the thickness on described impedance matching ring top layer and the thickness on electrostatic clamping device top layer are roughly the same.
4. electrode assemblie according to claim 2 is characterized in that, described impedance matching ring skin-material is selected from a kind of in pottery, quartz, the polyamide.
5. electrode assemblie according to claim 2 is characterized in that, described impedance matching cyclic group body material comprises aluminium alloy or stainless steel.
6. electrode assemblie according to claim 1 is characterized in that, the material of described edge ring is selected from a kind of in pottery, quartz, monocrystalline silicon, the polysilicon.
7. electrode assemblie according to claim 1 is characterized in that the material of described focusing ring comprises pottery or quartz.
8. electrode assemblie according to claim 1 is characterized in that the material of described dead ring comprises pottery or insulating resin.
9. electrode assemblie according to claim 1 is characterized in that described electrode assemblie also comprises the electrode protection ring, and it is arranged at the peripheral of dead ring and electrical ground, avoids polluting in order to protect described electrostatic clamping device.
10. electrode assemblie according to claim 9 is characterized in that the material of described electrode protection ring comprises aluminum or aluminum alloy.
11. apparatus for processing plasma, comprise reaction chamber and place its interior electrostatic clamping device, it is characterized in that, in reaction chamber, be provided with as any described electrode assemblie in the claim 1 to 10, place the electric field and the Temperature Distribution of the workpiece on the described electrostatic clamping device in order to coupling around described electrostatic clamping device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2008102279837A CN101754565B (en) | 2008-12-03 | 2008-12-03 | Electrode component and plasma treatment equipment using electrode component |
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| CN2008102279837A CN101754565B (en) | 2008-12-03 | 2008-12-03 | Electrode component and plasma treatment equipment using electrode component |
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| CN101754565A true CN101754565A (en) | 2010-06-23 |
| CN101754565B CN101754565B (en) | 2012-07-25 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104752250A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Detection device used for detecting insulation rings and plasma processing equipment |
| CN105789006A (en) * | 2014-12-26 | 2016-07-20 | 中微半导体设备(上海)有限公司 | Focusing ring with adjustable height and height adjustment method thereof |
| CN107466423A (en) * | 2015-04-16 | 2017-12-12 | 瓦里安半导体设备公司 | Heat of mixing electrostatic clamp |
| CN107768275A (en) * | 2016-08-19 | 2018-03-06 | 朗姆研究公司 | Utilize CD uniformities on movable edge ring and gas injection adjustment control chip |
| CN109473333A (en) * | 2018-10-08 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN110349824A (en) * | 2018-04-02 | 2019-10-18 | 细美事有限公司 | The device and method for handling substrate |
| CN111146066A (en) * | 2018-11-05 | 2020-05-12 | 东京毅力科创株式会社 | Mounting table, method for positioning edge ring, and substrate processing apparatus |
| CN112185789A (en) * | 2019-07-01 | 2021-01-05 | 东京毅力科创株式会社 | Etching method and plasma processing apparatus |
| CN112435912A (en) * | 2019-08-26 | 2021-03-02 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
Family Cites Families (3)
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| US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| CN1777691B (en) * | 2003-03-21 | 2011-11-23 | 东京毅力科创株式会社 | Method and apparatus for reducing substrate backside deposition during processing |
| JP4642528B2 (en) * | 2005-03-31 | 2011-03-02 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
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- 2008-12-03 CN CN2008102279837A patent/CN101754565B/en active Active
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| CN104752250B (en) * | 2013-12-29 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For detecting the detection device and plasma processing device of dead ring |
| CN104752250A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Detection device used for detecting insulation rings and plasma processing equipment |
| CN105789006A (en) * | 2014-12-26 | 2016-07-20 | 中微半导体设备(上海)有限公司 | Focusing ring with adjustable height and height adjustment method thereof |
| CN105789006B (en) * | 2014-12-26 | 2017-10-17 | 中微半导体设备(上海)有限公司 | A kind of Height Adjustable focusing ring and its height adjusting method |
| CN107466423B (en) * | 2015-04-16 | 2019-03-26 | 瓦里安半导体设备公司 | Heat of mixing electrostatic chuck |
| CN107466423A (en) * | 2015-04-16 | 2017-12-12 | 瓦里安半导体设备公司 | Heat of mixing electrostatic clamp |
| CN107768275A (en) * | 2016-08-19 | 2018-03-06 | 朗姆研究公司 | Utilize CD uniformities on movable edge ring and gas injection adjustment control chip |
| CN110349824A (en) * | 2018-04-02 | 2019-10-18 | 细美事有限公司 | The device and method for handling substrate |
| CN110349824B (en) * | 2018-04-02 | 2022-01-11 | 细美事有限公司 | Apparatus and method for processing substrate |
| CN109473333A (en) * | 2018-10-08 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN109473333B (en) * | 2018-10-08 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN111146066A (en) * | 2018-11-05 | 2020-05-12 | 东京毅力科创株式会社 | Mounting table, method for positioning edge ring, and substrate processing apparatus |
| CN112185789A (en) * | 2019-07-01 | 2021-01-05 | 东京毅力科创株式会社 | Etching method and plasma processing apparatus |
| CN112435912A (en) * | 2019-08-26 | 2021-03-02 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| TWI771714B (en) * | 2019-08-26 | 2022-07-21 | 大陸商中微半導體設備（上海）股份有限公司 | Plasma processing device |
| CN112435912B (en) * | 2019-08-26 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
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| CN101754565B (en) | 2012-07-25 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |