CN105762199A - Ultra-thin packaging product of diode and packaging method thereof - Google Patents
Ultra-thin packaging product of diode and packaging method thereof Download PDFInfo
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- CN105762199A CN105762199A CN201610287815.1A CN201610287815A CN105762199A CN 105762199 A CN105762199 A CN 105762199A CN 201610287815 A CN201610287815 A CN 201610287815A CN 105762199 A CN105762199 A CN 105762199A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000012856 packing Methods 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000004033 plastic Substances 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 43
- 241000567030 Ampulloclitocybe clavipes Species 0.000 description 7
- 206010043101 Talipes Diseases 0.000 description 7
- 201000011228 clubfoot Diseases 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001149 thermolysis Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention provides an ultra-thin packaging product of a diode and a packaging method thereof.The ultra-thin packaging product comprises a plastic package body, a chip, a copper sheet, a pin I and a pin II, wherein the chip and the copper sheet are packaged in the plastic package body, the pin I and the pin II are respectively connected with the copper sheet and extend to the outside of the plastic package body, the cross section of the plastic package body is an isosceles trapezoid, the height of the plastic package body is 1.0-1.5 mm, and the pin I and the pin II are linear and are located on one straight line with the lower surface of the plastic package body.The overall packaging thickness can be decreased by 40% or above compared with an existing package.Replacement can be performed by utilizing the circuit board design of existing products without circuit board edition correction.An existing pin bending and forming process in a production process is omitted, the pins can be directly cut off, the stress produced due to pin bending is removed, the poor situations of pin warping and the like are also not caused, and the product quality is ensured.The forming process is simple and convenient, the production efficiency can be improved, and the production costs can be reduced.
Description
Technical field
The present invention relates to ultrathin encapsulating products and the method for packing thereof of a kind of diode.
Background technology
Existing market routine SMC product ontology thickness is thicker, takes up room big, when being encapsulated on wiring board, is limited by the height impact of device, and finished product (such as charger) also can be only sustained at a thicker size.Meanwhile, existing SMC product is in process of production owing to using the mode of rib cutting clubfoot molding, and chip can be caused damage by the stress produced during clubfoot, thus has influence on electric property and the reliability of product；It addition, the bad foot that such as sticks up of clubfoot foot type can cause SMC product cannot contact with red glue, client causes SMC product to drop when wiring board load, affects client and uses and increase rework cost.Existing SMC production process can cause product foot type bad, affects client and uses.Existing SMC production process can cause product electric property bad.
Along with semiconductor technology develops towards the direction that high density is highly integrated, electronic product does less and less, does thinner and thinner, and semiconductor device is also developing towards miniaturization, flattening direction along with the development of electronic product, to be suitable for the demand of various different product.Existing market conventional products body thickness is thicker, takes up room big, cannot catch up with the change in market.
Authorization Notice No. CN204257703U discloses a kind of diode being easy to heat radiation, comprise pin one, pin two, chip and plastic-sealed body, described chip package is in plastic-sealed body, described pin one, pin two are connected with input, the outfan of chip and extend to outside plastic-sealed body respectively, the side of described plastic-sealed body object chip input is provided with groove, the area of described groove is more than or equal to the area of chip, the side of described plastic-sealed body object chip outfan is provided with fin, also is provided with fin in described groove.This encapsulating structure is thicker, easily causes finished product of terminal company thick, takes up room big.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide ultrathin encapsulating products and the method for packing thereof of a kind of diode, uses, can effectively reduce the thickness of end product on the basis of existing line plate.
For achieving the above object and other relevant purposes, the present invention provides the ultrathin encapsulating products of a kind of diode, including plastic-sealed body, chip, copper tablet, pin one and pin two, described chip and copper tablet are encapsulated in described plastic-sealed body, described pin one, pin two are connected with copper tablet respectively and extend to outside plastic-sealed body, the cross section of described plastic-sealed body is isosceles trapezoid, the height of described plastic-sealed body is 1.0-1.5mm, and described pin one, pin two are linearity with the lower surface of plastic-sealed body point-blank.
Preferably, described plastic-sealed body is the black glue material of epoxy resin, and its heat conductivity about 0.4-0.8 is used for protecting inside chip, and has insulation, thermolysis.
Preferably, the height of described plastic-sealed body is 1.3mm, and described pin one, the thickness of pin two are 0.2mm, and described pin one, the width of pin two are 3mm.
Preferably, being provided with tin layers between described chip and described copper tablet, described copper tablet is one-body molded with described pin one or pin two.
Preferably, described copper tablet includes tablet and lower tablet, and described upper tablet is identical with blanking plate shape and relatively sticks together.
A kind of ultrathin method for packing of diode, its step includes:
The first step, welding: by copper tablet, chip and tin layers by high-temperature soldering, welding process needs open nitrogen protection, prevent product high-temperature oxydation from causing failure welding, affect product quality；
Second step, mold: black for epoxy resin glue is coated on around good with copper tablet scolding tin chip, it is compression molded into plastic-sealed body, the cross section of described plastic-sealed body is isosceles trapezoid, the height of described plastic-sealed body is 1.0-1.5mm, and black glue can make it have insulating properties, and can bear certain stress, make it lose efficacy in order to avoid hurting chip, also there is thermolysis；
3rd step, tin plating: the part at pin one, pin two plates last layer tin layers；
4th step, cuts off: cut away by the sweep of pin one, pin two, make pin one, pin two concordant with the lower surface of plastic-sealed body.
Preferably, in the first step, Peak temperature is 340-350 DEG C；Nitrogen flow is 10-20m3/h。
Preferably, in second step, the temperature molded is 160-180 DEG C, to carry out molding inspection after second step molds, mold and check the mold pressing outward appearance being primarily directed to product to test, the relevant parameter guaranteeing to produce equipment in mold process meets the requirement of job specification, and the product appearance after plastic packaging meets the requirement of final products.
As it has been described above, the ultrathin encapsulating products of a kind of diode of the present invention and method for packing thereof, have the advantages that the more existing encapsulation of overall package thickness can reduce more than 40%；The wiring board design of available existing product substitutes, it is not necessary to wiring board correcting；Production process eliminates the operation of existing clubfoot molding, directly pin is cut off, both got rid of the stress that clubfoot produces, also do not resulted in undesirable conditions such as sticking up foot, it is ensured that product quality；Molding procedure is easy, energy improving production efficiency, reduces production cost.
Accompanying drawing explanation
Fig. 1 is the encapsulating products of the diode of prior art.
Fig. 2 is the ultrathin encapsulating products of the diode of the present invention.
01 plastic-sealed body, 02 chip, 03 tin layers, 04 bronze medal tablet, 05 pin one, 06 pin two.
Detailed description of the invention
By particular specific embodiment, embodiments of the present invention being described below, those skilled in the art can be understood other advantages and effect of the present invention easily by the content disclosed by this specification.
Refer to Fig. 1 to Fig. 2.Notice, structure depicted in this specification institute accompanying drawings, ratio, size etc., the most only in order to coordinate the content disclosed in description, understand for those skilled in the art and read, it is not limited to the enforceable qualifications of the present invention, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size, under not affecting effect that the present invention can be generated by and the purpose that can reach, all should still fall in the range of disclosed technology contents obtains and can contain.Simultaneously, in this specification cited as " on ", D score, "left", "right", the term of " middle " and " " etc., it is merely convenient to understanding of narration, and it is not used to limit the enforceable scope of the present invention, being altered or modified of its relativeness, changing under technology contents without essence, when being also considered as the enforceable category of the present invention.
The present invention provides the ultrathin encapsulating products of a kind of diode, as shown in Figure 2, including plastic-sealed body 01, chip 02, copper tablet 04, pin 1 and pin 2 06, described chip 02 and copper tablet 04 are encapsulated in described plastic-sealed body 01, described pin 1, pin 2 06 are connected with copper tablet 04 respectively and extend to outside plastic-sealed body 01, the cross section of described plastic-sealed body 01 is isosceles trapezoid, the height of described plastic-sealed body 01 is 1.0-1.5mm, and described pin 1, pin 2 06 are linearity with the lower surface of plastic-sealed body 01 point-blank.
In the present embodiment, described plastic-sealed body 01 is the black glue material of epoxy resin, and its heat conductivity about 0.4-0.8 is used for protecting inside chip, and has insulation, thermolysis.
In the present embodiment, the height of described plastic-sealed body 01 is 1.3mm, and described pin 1, the thickness of pin 2 06 are 0.2mm, and described pin 1, the width of pin 2 06 are 3mm.
In the present embodiment, being provided with tin layers 03 between described chip 02 and described copper tablet 04, described copper tablet 04 is one-body molded with described pin 1 or pin 2 06.
In the present embodiment, described copper tablet 04 includes tablet and lower tablet, and described upper tablet is identical with blanking plate shape and relatively sticks together.
A kind of ultrathin method for packing of diode, its step includes:
The first step, welding: by copper tablet 04, chip 02 and tin layers 03 by high-temperature soldering, welding process needs open nitrogen protection, prevent product high-temperature oxydation from causing failure welding, affect product quality；
Second step, mold: black for epoxy resin glue is coated on good with copper tablet 04 scolding tin chip 02 around, it is compression molded into plastic-sealed body 01, the cross section of described plastic-sealed body 01 is isosceles trapezoid, the height of described plastic-sealed body 01 is 1.0-1.5mm, and black glue can make it have insulating properties, and can bear certain stress, make it lose efficacy in order to avoid hurting chip, also there is thermolysis；
3rd step, tin plating: the part at pin 1, pin 2 06 plates last layer tin layers 03；
4th step, cuts off: cut away by the sweep of pin 1, pin 2 06, make pin 1, pin 2 06 concordant with the lower surface of plastic-sealed body 01.
In the present embodiment, in the first step, Peak temperature is 340-350 DEG C；Nitrogen flow is 10-20m3/h。
In the present embodiment, in second step, the temperature molded is 160-180 DEG C, to carry out molding inspection after second step molds, mold and check the mold pressing outward appearance being primarily directed to product to test, the relevant parameter guaranteeing to produce equipment in mold process meets the requirement of job specification, and the product appearance after plastic packaging meets the requirement of final products.
The black glue of its epoxy resin primarily serves the purpose of protection inside chip 02, and has insulating effect；Chip 02 primarily serves the purpose of the electric property presenting diode；Scolding tin primarily serves the purpose of connection copper tablet 04 and chip 02；Copper tablet 04 is used for connecting chip 02 and outside line, and tin plating Main Function is for convenience of client by Product jointing in the circuit board.On the basis of retaining existing product inside chip 02 size, pin configuration being adjusted, thus reduce product thickness, new product relatively existing product body thickness reduces more than 40%；The solderable length of side of pin is close with existing product simultaneously, and the wiring board design of available existing product substitutes, it is not necessary to wiring board correcting；Therefore, the product of this method for packing encapsulation uses on the basis of existing line plate, can effectively reduce the thickness of end product.
As it has been described above, the ultrathin encapsulating products of a kind of diode of present invention offer and method for packing thereof, the more existing encapsulation of overall package thickness can reduce more than 40%；The wiring board design of available existing product substitutes, it is not necessary to wiring board correcting；Production process eliminates the operation of existing clubfoot molding, directly pin is cut off, both got rid of the stress that clubfoot produces, also do not resulted in undesirable conditions such as sticking up foot, it is ensured that product quality；Molding procedure is easy, energy improving production efficiency, reduces production cost.So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by any person skilled in the art.Therefore, art has all equivalence modification or changes that usually intellectual is completed under without departing from disclosed spirit and technological thought such as, must be contained by the claim of the present invention.
Claims (8)
1. the ultrathin encapsulating products of a diode, it is characterized in that: include plastic-sealed body, chip, copper tablet, pin one and pin two, described chip and copper tablet are encapsulated in described plastic-sealed body, described pin one, pin two are connected with copper tablet respectively and extend to outside plastic-sealed body, the cross section of described plastic-sealed body is isosceles trapezoid, the height of described plastic-sealed body is 1.0-1.5mm, and described pin one, pin two are linearity with the lower surface of plastic-sealed body point-blank.
The ultrathin encapsulating products of a kind of diode the most according to claim 1, it is characterised in that: described plastic-sealed body is the black glue material of epoxy resin, its heat conductivity about 0.4-0.8.
The ultrathin encapsulating products of a kind of diode the most according to claim 1, it is characterised in that: the height of described plastic-sealed body is 1.3mm, and described pin one, the thickness of pin two are 0.2mm, and described pin one, the width of pin two are 3mm.
The ultrathin encapsulating products of a kind of diode the most according to claim 1, it is characterised in that: being provided with tin layers between described chip and described copper tablet, described copper tablet is one-body molded with described pin one or pin two.
The ultrathin encapsulating products of a kind of diode the most according to claim 1, it is characterised in that: described copper tablet includes tablet and lower tablet, and described upper tablet is identical with blanking plate shape and relatively sticks together.
6. the ultrathin method for packing of a diode, it is characterised in that:
The first step, welding: by copper tablet, chip and tin layers by high-temperature soldering, welding process is opened nitrogen protection, prevents product high-temperature oxydation from causing failure welding, affect product quality；
Second step, molds: being coated on by black for epoxy resin glue around good with copper tablet scolding tin chip, be compression molded into plastic-sealed body, the cross section of described plastic-sealed body is isosceles trapezoid, and the height of described plastic-sealed body is 1.0-1.5mm；
3rd step, tin plating: the part at pin one, pin two plates last layer tin layers；
4th step, cuts off: cut away by the sweep of pin one, pin two, make pin one, pin two concordant with the lower surface of plastic-sealed body.
The ultrathin method for packing of a kind of diode the most according to claim 6, it is characterised in that: in the first step, Peak temperature is 340-350 DEG C；Nitrogen flow is 10-20m3/h。
The ultrathin method for packing of a kind of diode the most according to claim 6, it is characterised in that: in second step, the temperature of mold pressing is 160-180 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610287815.1A CN105762199A (en) | 2016-05-04 | 2016-05-04 | Ultra-thin packaging product of diode and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610287815.1A CN105762199A (en) | 2016-05-04 | 2016-05-04 | Ultra-thin packaging product of diode and packaging method thereof |
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| CN105762199A true CN105762199A (en) | 2016-07-13 |
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| CN201610287815.1A Pending CN105762199A (en) | 2016-05-04 | 2016-05-04 | Ultra-thin packaging product of diode and packaging method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107622946A (en) * | 2017-09-30 | 2018-01-23 | 江苏海德半导体有限公司 | The anti-stress automatic molding process of stamp-mounting-paper diode |
| CN107818923A (en) * | 2017-09-30 | 2018-03-20 | 江苏海德半导体有限公司 | The efficient pin transfer load technique of diode |
| WO2018149378A1 (en) * | 2017-02-15 | 2018-08-23 | 苏州迈瑞微电子有限公司 | Plastic packaging material transferring apparatus and method |
| CN110034087A (en) * | 2019-05-06 | 2019-07-19 | 上海金克半导体设备有限公司 | Multi-chip packaged transistor |
| CN111403366A (en) * | 2020-03-19 | 2020-07-10 | 常州星海电子股份有限公司 | Transient diode and packaging process thereof |
| CN112992700A (en) * | 2021-02-01 | 2021-06-18 | 中之半导体科技(东莞)有限公司 | Stable die bonding method for diode |
| CN115863269A (en) * | 2022-10-27 | 2023-03-28 | 遵义筑芯威半导体技术有限公司 | High-heat-dissipation packaging structure and packaging process thereof |
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| US5315152A (en) * | 1990-05-31 | 1994-05-24 | Kabushiki Kaisha Toshiba | Lead frame with improved adhesiveness property against plastic and plastic sealing type semiconductor packaging using said lead frame |
| CN204257625U (en) * | 2014-12-06 | 2015-04-08 | 滨海治润电子有限公司 | A kind of small-scale bridge rectifier |
| CN105489488A (en) * | 2015-11-26 | 2016-04-13 | 钟运辉 | Manufacturing method for patch diode employing runner as body |
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2016
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Patent Citations (3)
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|---|---|---|---|---|
| US5315152A (en) * | 1990-05-31 | 1994-05-24 | Kabushiki Kaisha Toshiba | Lead frame with improved adhesiveness property against plastic and plastic sealing type semiconductor packaging using said lead frame |
| CN204257625U (en) * | 2014-12-06 | 2015-04-08 | 滨海治润电子有限公司 | A kind of small-scale bridge rectifier |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018149378A1 (en) * | 2017-02-15 | 2018-08-23 | 苏州迈瑞微电子有限公司 | Plastic packaging material transferring apparatus and method |
| CN107622946A (en) * | 2017-09-30 | 2018-01-23 | 江苏海德半导体有限公司 | The anti-stress automatic molding process of stamp-mounting-paper diode |
| CN107818923A (en) * | 2017-09-30 | 2018-03-20 | 江苏海德半导体有限公司 | The efficient pin transfer load technique of diode |
| CN107818923B (en) * | 2017-09-30 | 2019-11-08 | 江苏海德半导体有限公司 | The efficient needle of diode shifts load technique |
| CN107622946B (en) * | 2017-09-30 | 2020-10-09 | 江苏海德半导体有限公司 | Automatic anti-stress forming process for surface mount diode |
| CN110034087A (en) * | 2019-05-06 | 2019-07-19 | 上海金克半导体设备有限公司 | Multi-chip packaged transistor |
| CN111403366A (en) * | 2020-03-19 | 2020-07-10 | 常州星海电子股份有限公司 | Transient diode and packaging process thereof |
| CN112992700A (en) * | 2021-02-01 | 2021-06-18 | 中之半导体科技(东莞)有限公司 | Stable die bonding method for diode |
| CN112992700B (en) * | 2021-02-01 | 2021-09-28 | 先之科半导体科技(东莞)有限公司 | Stable die bonding method for diode |
| CN115863269A (en) * | 2022-10-27 | 2023-03-28 | 遵义筑芯威半导体技术有限公司 | High-heat-dissipation packaging structure and packaging process thereof |
| CN115863269B (en) * | 2022-10-27 | 2024-02-13 | 遵义筑芯威半导体技术有限公司 | High-heat-dissipation packaging structure and packaging process thereof |
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