CN105745641A - 一种曲线拟合电路、模拟预失真器和射频信号发射机 - Google Patents

一种曲线拟合电路、模拟预失真器和射频信号发射机 Download PDF

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CN105745641A
CN105745641A CN201480024986.4A CN201480024986A CN105745641A CN 105745641 A CN105745641 A CN 105745641A CN 201480024986 A CN201480024986 A CN 201480024986A CN 105745641 A CN105745641 A CN 105745641A
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circuit
signal
amplitude
output
resistor
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CN105745641B (zh
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黄伟
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Huawei Technologies Co Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3247Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10Complex mathematical operations
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10Complex mathematical operations
    • G06F17/17Function evaluation by approximation methods, e.g. inter- or extrapolation, smoothing, least mean square method
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3258Modifications of amplifiers to reduce non-linear distortion using predistortion circuits based on polynomial terms
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/102A non-specified detector of a signal envelope being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Algebra (AREA)
  • Computational Mathematics (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

本发明实施例提供了一种曲线拟合电路、模拟预失真器和射频信号发射机,用以解决在射频信号分解时采用现有的多项式拟合经常会用到高阶多项式,所导致的拟合结果对高次项系数和量化噪声都非常敏感的问题。该曲线拟合电路中的每个分段处理电路,按照预设规则截取接收到的输入信号中的一部分,以及根据截取的部分生成待处理信号,并采用多项式拟合的方法根据所述待处理信号生成q个输出信号;不同分段处理电路截取的部分不完全相同;每个第一加法电路,接收各个分段处理电路的q个输出信号中的一个信号,并根据接收到的n个信号之和得到所述曲线拟合电路的一个输出信号;不同第一加法电路接收同一个分段处理电路的q个输出信号中的不同输出信号。

Description

PCT国内申请,说明书已公开。

Claims (11)

  1. PCT国内申请,权利要求书已公开。
CN201480024986.4A 2014-10-31 2014-10-31 一种曲线拟合电路、模拟预失真器和射频信号发射机 Active CN105745641B (zh)

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PCT/CN2014/090095 WO2016065633A1 (zh) 2014-10-31 2014-10-31 一种曲线拟合电路、模拟预失真器和射频信号发射机

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EP3523856A4 (en) 2016-10-07 2020-06-24 NanoSemi, Inc. DIGITAL BEAM ORIENTATION PREDISTORSION
BR112019015265A2 (pt) 2017-01-25 2020-04-14 Huawei Tech Co Ltd método e dispositivo de processamento de sinal
JP2020511822A (ja) 2017-02-25 2020-04-16 ナノセミ, インク.Nanosemi, Inc. マルチバンド・デジタル・プリディストータ
US10141961B1 (en) 2017-05-18 2018-11-27 Nanosemi, Inc. Passive intermodulation cancellation
US10581470B2 (en) 2017-06-09 2020-03-03 Nanosemi, Inc. Linearization system
US10931318B2 (en) * 2017-06-09 2021-02-23 Nanosemi, Inc. Subsampled linearization system
US11115067B2 (en) 2017-06-09 2021-09-07 Nanosemi, Inc. Multi-band linearization system
WO2019014422A1 (en) 2017-07-12 2019-01-17 Nanosemi, Inc. SYSTEMS AND METHODS FOR CONTROLLING RADIOS MADE WITH DIGITAL PREDISTORSION
US11303251B2 (en) 2017-10-02 2022-04-12 Nanosemi, Inc. Digital predistortion adjustment based on determination of load condition characteristics
US10644657B1 (en) 2018-05-11 2020-05-05 Nanosemi, Inc. Multi-band digital compensator for a non-linear system
EP3791470A1 (en) 2018-05-11 2021-03-17 Nanosemi, Inc. Digital compensator for a non-linear system
US10763904B2 (en) 2018-05-25 2020-09-01 Nanosemi, Inc. Digital predistortion in varying operating conditions
US10931238B2 (en) 2018-05-25 2021-02-23 Nanosemi, Inc. Linearization with envelope tracking or average power tracking
US11863210B2 (en) 2018-05-25 2024-01-02 Nanosemi, Inc. Linearization with level tracking
US10992326B1 (en) 2020-05-19 2021-04-27 Nanosemi, Inc. Buffer management for adaptive digital predistortion

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EP3197045B1 (en) 2018-09-19
EP3197045A1 (en) 2017-07-26
US20170302233A1 (en) 2017-10-19
KR101926665B1 (ko) 2018-12-07
KR20170070156A (ko) 2017-06-21
CN105745641B (zh) 2019-02-19
JP2017532914A (ja) 2017-11-02
EP3197045A4 (en) 2017-07-26
WO2016065633A1 (zh) 2016-05-06
US10141896B2 (en) 2018-11-27

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