CN105731369B - A kind of apparatus and method of room-temperature bonding ITO nano wires - Google Patents
A kind of apparatus and method of room-temperature bonding ITO nano wires Download PDFInfo
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- CN105731369B CN105731369B CN201610105967.5A CN201610105967A CN105731369B CN 105731369 B CN105731369 B CN 105731369B CN 201610105967 A CN201610105967 A CN 201610105967A CN 105731369 B CN105731369 B CN 105731369B
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- 239000002070 nanowire Substances 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000523 sample Substances 0.000 claims abstract description 114
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000003466 welding Methods 0.000 claims abstract description 40
- 238000012360 testing method Methods 0.000 claims abstract description 16
- 238000010894 electron beam technology Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 4
- 108010050792 glutenin Proteins 0.000 claims abstract description 4
- 238000006073 displacement reaction Methods 0.000 claims description 28
- 238000012544 monitoring process Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 235000007164 Oryza sativa Nutrition 0.000 claims description 7
- 235000009566 rice Nutrition 0.000 claims description 7
- 238000000609 electron-beam lithography Methods 0.000 claims description 6
- 235000012149 noodles Nutrition 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 abstract description 3
- 241000209094 Oryza Species 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000013068 control sample Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 208000032767 Device breakage Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
Abstract
The present invention provides a kind of method of room-temperature bonding tin indium oxide nano-wire, using nanostructured A to be welded and it is arranged at probe pinpoint as the nano wire B of welding material and rectifies a side surface to sample stage, probe tip prepares the sensitive high-molecular-weight glutenin subunits of electron beam irradiation；Moved toward the nano wire B as welding material by the use of large scale gearshift and small yardstick gearshift control probe, make probe and nano wire B tip contacts；Using probe tip bonding and curing nano line B；Control probe movement, fractureed using probe and nano wire B and be moved into A surfaces to be welded and contact, carry out cold welding, the welding process of nano wire is monitored by electrical testing unit, when resistivity of the contact resistivity between nano wire with nano wire in itself is suitable, that is, represent that path is conductive.Using electron beam or ion beam etching and the connection of nano wire B and probe is cut off, and make nano wire B keep being connected with nano wire A, realize nano thread structure bonding at room temperature.
Description
Technical field
The present invention relates to a kind of method of bonding nano wire cold at room temperature.Belong to advanced material and advanced device construction
Technical field.
Background technology
The raising of gradually development and people to electronics, the functional requirement of electrical equipment of electronic technology is proposed to electronic device
New requirement.Traditional semiconductor devices is based on silicon semiconductor technique, generally has not resistant to bending, it is impossible to bear big machinery punching
The problem of the device fracture caused by hitting.With the proposition of flexible semiconductor device and wearable device concept in recent years.Grind
The person of studying carefully proposes the concept of " can recover electronic device ".Material or structure for preparing this device are needed in applied environment
Under when big bending is subjected to or impact produces fracture with can be from the function of connection.This function is properly termed as " room temperature
Under cold bonding ", namely be different from the high temperature melt welding of ordinary meaning, the device architecture can at room temperature carry out circuit
Reconnect and recover its performance.A critical process being related to during the preparation and use of this device is a nanometer material
The cold bonding of room temperature of material and structure.At present, there is research it has been shown that due to the high-specific surface area and surface atom of nano material
High activity, cold bonding can be produced in the material of small yardstick.Even so, in fact, special due to material surface structure
Property and surface be highly prone to impurity pollution, most of materials are actually difficult to cold bonding.Just because of this, most of at present
Flexible semiconductor device abandon use " electronic device can be recovered " concept, then used organic high score conducting polymer or
Semiconductive polymer material, because the flexility that organic material has generally had.
Although flexible semiconductor device prepared by organic material can meet some application scenarios, its performance is restricted
The material parameter of performance such as material mobility, tolerable temperature and voltage, toxicity etc. cause that it is certain tired extensively using having
Difficulty, therefore, still having numerous researchers research to be prepared using conventional semiconductor material at present can recover electronic device, to can
Meet the application of requirements at the higher level.Tin indium oxide (ITO) material is widely used in transparency conductive electrode at present, in flexible electronic
There is very important status in device.Have if it can carry out room temperature cold welding to indium tin oxide material very important
Practice significance.
The content of the invention
Goal of the invention：The present invention proposes a kind of apparatus and method of room-temperature bonding ITO nano wires, realizes that nano thread structure exists
Bonding at room temperature.
The technical scheme is that：A kind of device of room-temperature bonding ITO nano wires, including displacement control unit, can
The large scale gearshift of micron scale above displacement is realized, the small yardstick displacement dress of the following yardstick displacement of micron can be realized
Put, the probe and sample stage being made of an electrically conducting material, built with voltage source and the electrical testing unit of ammeter, with receiving newton
The force cell and pressure monitoring unit of the dynamometry precision of rank；
The sample stage is arranged at by electron beam patterning and can be launched in the vacuum cavity of ion beam, and a side surface leads to
Cross conducting resinl and be provided with nanostructured A and the nano wire B, the nanostructured A to be welded as welding material to be welded
50 nanometers are respectively less than with the diameter of the nano wire B as welding material and be grown in conductive substrates；
The large scale gearshift, small yardstick gearshift, force cell and probe order are fixedly installed in vacuum
In cavity, probe pinpoint rectifies the side surface of sample stage one to that can set substrate, the large scale gearshift, small yardstick displacement
Device and load cell signal are connected to the displacement control unit being arranged on the outside of vacuum cavity, by displacement control unit control
The movement of the three-dimensional of manufacturing probe, by the stress of pressure monitoring unit monitoring probe；
The electrical testing unit is arranged at outside vacuum cavity, and one end is electrically connected to large scale gearshift, and one end is electrically connected
Be connected to sample stage, when probe and sample stage are directly connected to, large scale gearshift, small yardstick gearshift, force cell,
Conductive path is formed between probe, sample stage and electrical testing unit.
Further, the sample stage is fixedly installed in vacuum cavity.
Further, the sample stage packaged type is installed in vacuum cavity, and a displacement transducer is installed on sample stage
The movement of control sample stage position.
Further, the tip curvature radius of the probe is less than 500 nanometers.
The method that the present invention also provides the room-temperature bonding ITO nano wires realized using the device of room-temperature bonding ITO nano wires,
Comprise the following steps that：
Step (1), chooses the nanostructured A to be welded and nano wire B as welding material, described as welding material
Nano wire B diameter less than 50 nanometers and being grown on substrate；
Step (2), locates using nanostructured A to be welded and as the nano wire B of welding material in oxygen gas plasma
Reason 1-10 minutes, 30-100 watts of power, air pressure 1-5Pa, oxygen flow 10-100sccm；
Step (3), inserts in UV ozone environment using nanostructured A to be welded and as the nano wire B of welding material
Treatment 30-120 seconds；
Step (4), using nanostructured A to be welded and is arranged at probe pinpoint and rectifies right as the nano wire B of welding material
One side surface of sample stage, probe tip prepares the sensitive conducting polymer curing materials of electron beam irradiation；
Step (5), by the use of large scale gearshift and past the receiving as welding material of small yardstick gearshift control probe
Rice noodles B is moved, and makes probe and nano wire B tip contacts；
Step (6), focus on electron beam consolidates it on the sensitive high-molecular-weight glutenin subunits of the electron beam irradiation of probe tip
Change and bond nano wire B；
Step (7), using large scale gearshift and small yardstick gearshift control probe sidesway, is fractureed using probe and received
Rice noodles B is simultaneously moved into A surfaces to be welded and contacts, and control probe applies normal pressure, and holding carries out cold welding in 1-30 seconds；
By electrical testing unit applied voltage, electric current in measure loop simultaneously calculates contact resistivity, when contact resistivity and nanometer
When line resisitivity in itself is in error range, represents and contact between the two good；
Step (8), using the electron beam or ion beam etching nano wire B that focus on, makes nano wire B separate with probe；
Step (9), the structure that the nano wire B for being obtained is welded in nanostructured A surfaces to be welded can be with activity
The free degree, and electrical connection be maintained, surface soldered success.
Further, the small yardstick gearshift uses piezoelectricity, electrostriction, electroluminescent thermal expansion or magnetostriction reality
The following yardstick displacement of existing micron.
Further, also comprise the following steps：
Step (10), cold welding termination process is in repeat step (5) to step (9), wherein step (7)：Using large scale position
Moving device and small yardstick gearshift control probe sidesway, are fractureed using probe and nano wire B and are moved into soldered
Nano wire B one end simultaneously contacts, and control probe applies normal pressure, and holding carries out cold welding in 1-30 seconds；Applied by electrical testing unit
Making alive, electric current in measure loop simultaneously calculates contact resistivity, when contact resistivity and nano wire resisitivity in itself
When in error range, represent and contact between the two good；
Step (11), repeat step (10) being capable of continuously coupled many nano wire B.
Further, can be received by the device real-time monitoring room-temperature bonding ITO of electron beam patterning by vacuum cavity
The process of rice noodles.Whole processing step simple transparent, real-time high-efficiency.
Beneficial effect：With preferable repeatability.Can be good with continuously coupled many nano wires, process repeatability.It is made
Standby connection has good electric conductivity.Calculating shows that resistance of the connection resistance with nano wire in itself is suitable.Connection realizes soft
Property connection.Embodiment shows that connection has the good free degree, and its mutual alignment can be sent out after many nano wires are connected
Changing and its electrical connection is maintained.
Brief description of the drawings
Fig. 1 is the structural representation of the device of room-temperature bonding ITO nano wires；Wherein, 1 is displacement control unit；2 is big chi
Degree displacement mechanism, the displacement for realizing micron scale above；3 is small yardstick displacement mechanism, for realizing the following yardstick of micron
Displacement；4 is force cell；5 is probe；6 and 7 are respectively nanostructured A and the nanometer as welding material to be welded
Line B；8 is fixed or movable sample stage.It then needs to connect a displacement controller if movable sample stage；9 survey for electricity
Examination unit, includes voltage source, ammeter etc.；10 is pressure monitoring unit.
Fig. 2 is to be welded in another ITO nano wire using ITO nano wires.Material is processed 1 minute by gas ions, work(
60 watts of rate, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure (a) display original state, its middle probe and
ITO nano wires have been contacted.Contacted with the ITO nano wires on side after ITO nanometers of thread breakage of figure (b) display contact.Apply
Plus both are bonded together after a small normal pressure.
Fig. 3 is to be welded in another ITO nano wire using ITO nano wires.Material is processed 1 minute by gas ions, work(
60 watts of rate, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Three sections of ITO Nanowire contacts bondings are shown in figure
Formed.Nano wire can be bonded together after applying a small lateral pressure.(note：Picture multiplication factor is identical with upper figure).
Fig. 4 is to be welded in another ITO nano wire using ITO nano wires.Material is processed 1 minute by gas ions, work(
60 watts of rate, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Four sections of ITO Nanowire contacts bondings are shown in figure
Formed.(note：Picture multiplication factor is identical with upper figure).
Fig. 5 is that the four sections of ITO nano wire bond contacts to be formed are stretched using probe, it can be seen that it is still connected to one
Rise.(note：Picture multiplication factor is identical with upper figure).
Fig. 6 is that the four sections of ITO nano wire bond contacts to be formed are compressed using probe, it can be seen that it is still connected to one
Rise.(note：Picture multiplication factor is identical with upper figure).
Fig. 7 is the I-E characteristic figure of nano wire after room-temperature bonding, wherein after 1 indicates probe and sample stage short circuit
I-E characteristic, 2 is the I-E characteristic of single ITO nano wires, after 3 bond together to form for two sections of ITO Nanowire contacts
I-E characteristic, 4 bond together to form rear I-E characteristic for four sections of ITO Nanowire contacts.Voltage is voltage,
Current is electric current.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of device of room-temperature bonding ITO nano wires, including displacement control unit 1, micron can be realized
The large scale gearshift 2 of scale above displacement, can realize the small yardstick gearshift 3 of the following yardstick displacement of micron, by leading
Probe 5 and sample stage 8 that electric material is made, built with voltage source and the electrical testing unit 9 of ammeter, with receiving newton rank
Dynamometry precision force cell 4 and pressure monitoring unit 10；The tip curvature radius of the probe 5 is less than 500 nanometers.
The sample stage 8 is arranged at by electron beam patterning and can be launched in the vacuum cavity of ion beam, a side surface
Nanostructured A6 and the nano wire B7 as welding material to be welded, the nano junction to be welded are provided with by conducting resinl
Structure A6 and it is respectively less than 50 nanometers and is grown in conductive substrates as the diameter of the nano wire B7 of welding material；
The large scale gearshift 2, small yardstick gearshift 3, force cell 4 and the order of probe 5 are fixedly installed in
In vacuum cavity, the tip of probe 5 is just to that can set the side surface of sample stage one of substrate, the large scale gearshift 2, small chi
Degree gearshift 3 and the signal of force cell 4 are connected to the displacement control unit 1 being arranged on the outside of vacuum cavity, by displacement
The movement of the three-dimensional of the control probe 5 of control unit 1, by the stress of the monitoring probe of pressure monitoring unit 10；
The electrical testing unit 9 is arranged at outside vacuum cavity, and one end is electrically connected to large scale gearshift 2, one end electricity
Sample stage 8 is connected to, when probe and sample stage 8 are directly connected to, large scale gearshift 2, small yardstick gearshift 3, dynamometry
Conductive path is formed between sensor 4, probe 5, sample stage 8 and electrical testing unit 9.
Wherein, the sample stage 8 is fixedly installed in vacuum cavity.Or packaged type is installed in vacuum cavity, sample
The position movement of one displacement transducer control sample stage is installed in sample platform.
The room-temperature bonding ITO nano wires that the device that the present invention also provides a kind of utilization room-temperature bonding ITO nano wires is realized
Method, comprises the following steps that：
Step (1), chooses the nanostructured A to be welded and nano wire B as welding material, described as welding material
Nano wire B diameter less than 50 nanometers and being grown on substrate；
Step (2), locates using nanostructured A to be welded and as the nano wire B of welding material in oxygen gas plasma
Reason 1-10 minutes, 30-100 watts of power, air pressure 1-5Pa, oxygen flow 10-100sccm；
Step (3), inserts in UV ozone environment using nanostructured A to be welded and as the nano wire B of welding material
Treatment 30-120 seconds；
Step (4), using nanostructured A to be welded and is arranged at probe pinpoint and rectifies right as the nano wire B of welding material
One side surface of sample stage, probe tip prepares the sensitive conducting polymer curing materials of electron beam irradiation；
Step (5), by the use of large scale gearshift and past the receiving as welding material of small yardstick gearshift control probe
Rice noodles B is moved, and makes probe and nano wire B tip contacts；
Step (6), focus on electron beam consolidates it on the sensitive high-molecular-weight glutenin subunits of the electron beam irradiation of probe tip
Change and bond nano wire B；
Step (7), using large scale gearshift and small yardstick gearshift control probe sidesway, is fractureed using probe and received
Rice noodles B is simultaneously moved into A surfaces to be welded and contacts, and control probe applies normal pressure, and holding carries out cold welding in 1-30 seconds；
By electrical testing unit applied voltage, electric current in measure loop simultaneously calculates contact resistivity, when contact resistivity and nanometer
When line resisitivity in itself is in error range, represents and contact between the two good；
Step (8), using the electron beam or ion beam etching nano wire B that focus on, makes nano wire B separate with probe；
Step (9), the structure that the nano wire B for being obtained is welded in nanostructured A surfaces to be welded can be with activity
The free degree, and electrical connection be maintained, surface soldered success.
Step (10), cold welding termination process is in repeat step (5) to step (9), wherein step (7)：Using large scale position
Moving device and small yardstick gearshift control probe sidesway, are fractureed using probe and nano wire B and are moved into soldered
Nano wire B one end simultaneously contacts, and control probe applies normal pressure, and holding carries out cold welding in 1-30 seconds；Applied by electrical testing unit
Making alive, electric current in measure loop simultaneously calculates contact resistivity, when contact resistivity and nano wire resisitivity in itself
When in error range, represent and contact between the two good；
Step (11), repeat step (10) being capable of continuously coupled many nano wire B.
Wherein, the small yardstick gearshift uses piezoelectricity, electrostriction, and electroluminescent thermal expansion or magnetostriction are realized micro-
The following yardstick displacement of rice.By can be by ITO nanometers of the device real-time monitoring room-temperature bonding of electron beam patterning in vacuum cavity
The process of line.Whole processing step is simple, real-time high-efficiency.
Embodiment 1：As shown in Fig. 2 being welded in another ITO nano wire using ITO nano wires.Material is by gas ions
Middle treatment 1 minute, 60 watts of power, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure (a) display initial shape
State, its middle probe and ITO nano wires have been contacted.ITO nanometers after ITO nanometers of thread breakage of figure (b) display contact with side
Line is contacted.Keep making both be bonded together in about 1 second after applying a small normal pressure.
Embodiment 2：As shown in figure 3, being welded in another ITO nano wire using ITO nano wires.Material is by gas ions
Middle treatment 1 minute, 60 watts of power, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Three sections of ITO are shown in figure
Nanowire contacts are bonded together to form.Keep making nano wire can be bonded together for about 30 seconds after applying a small lateral pressure.
(note：Picture multiplication factor is identical with upper figure).
Embodiment 3：As shown in figure 4, being welded in another ITO nano wire using ITO nano wires.Material is by gas ions
Middle treatment 1 minute, 60 watts of power, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Apply a small malleation
Keep making both be bonded together in about 10 seconds after power.Show that four sections of ITO Nanowire contacts are bonded together to form in figure.(note：Picture amplifies
Multiple is identical with upper figure).
Embodiment 4：As shown in figure 5, stretching the four sections of ITO nano wire bond contacts to be formed using probe, it can be seen that
It still links together.(note：Picture multiplication factor is identical with upper figure).
Embodiment 5：As shown in fig. 6, compressing the four sections of ITO nano wire bond contacts to be formed using probe, it can be seen that
It still links together.(note：Picture multiplication factor is identical with upper figure).
Fig. 7 is the I-E characteristic figure of nano wire after room-temperature bonding, wherein after 1 indicates probe and sample stage short circuit
I-E characteristic, 2 is the I-E characteristic of single ITO nano wires, after 3 bond together to form for two sections of ITO Nanowire contacts
I-E characteristic, 4 bond together to form rear I-E characteristic for four sections of ITO Nanowire contacts.
In sum, the method that the present invention is realized, with preferable repeatability.Can be with continuously coupled many nano wires, work
Skill repeatability is good.Prepared connection has good electric conductivity.Calculating shows, connection resistance and nano wire resistance in itself
Quite.Connection realizes flexible connection.Embodiment shows that connection has the good free degree, is connected in many nano wires
Its mutual alignment can change afterwards and its electrical connection is maintained.
The above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (4)
1. a kind of method of room-temperature bonding ITO nano wires, it is characterised in that using the device of following room-temperature bonding ITO nano wires
Realize, a kind of device of room-temperature bonding ITO nano wires includes displacement control unit (1), can realize a micron scale above
The large scale gearshift (2) of displacement, can realize the small yardstick gearshift (3) of the following yardstick displacement of micron, by conduction material
The material probe (5) and sample stage (8) that are made, built with voltage source and the electrical testing unit (9) of ammeter, with receiving newton grade
The force cell (4) and pressure monitoring unit (10) of other dynamometry precision；
The sample stage (8) is arranged at by electron beam patterning and can launch in the vacuum cavity of ion beam, and a side surface leads to
Cross conducting resinl and be provided with nanostructured A (6) and the nano wire B (7) as welding material to be welded, the nanometer to be welded
Structure A (6) and it is respectively less than 50 nanometers and is grown in conductive substrates as the diameter of the nano wire B (7) of welding material；
The fixed peace of the large scale gearshift (2), small yardstick gearshift (3), force cell (4) and probe (5) order
Loaded in vacuum cavity, probe (5) tip is just to that can set the side surface of sample stage one of substrate, the large scale gearshift
(2), small yardstick gearshift (3) and force cell (4) signal are connected to the Bit andits control list being arranged on the outside of vacuum cavity
First (1), the movement of the three-dimensional of probe (5) is controlled by displacement control unit (1), is monitored by pressure monitoring unit (10)
The stress of probe；
The electrical testing unit (9) is arranged at outside vacuum cavity, and one end is electrically connected to large scale gearshift (2), one end electricity
Sample stage (8) is connected to, when probe and sample stage (8) are directly connected to, large scale gearshift (2), small yardstick gearshift
(3), conductive path is formed between force cell (4), probe (5), sample stage (8) and electrical testing unit (9)；
The method of the room-temperature bonding ITO nano wires is comprised the following steps that：
Step (1), chooses nanostructured A and the nano wire B as welding material to be welded, the receiving as welding material
The diameter of rice noodles B is less than 50 nanometers and is grown on substrate；
Step (2), 1- is processed using nanostructured A to be welded and as the nano wire B of welding material in oxygen gas plasma
10 minutes, 30-100 watts of power, air pressure 1-5Pa, oxygen flow 10-100sccm；
Step (3), nanostructured A to be welded and being inserted in UV ozone environment as the nano wire B of welding material is processed
30-120 seconds；
Step (4), using nanostructured A to be welded and is arranged at probe pinpoint and rectifies to sample as the nano wire B of welding material
One side surface of platform, probe tip prepares the sensitive conducting polymer curing materials of electron beam irradiation；
Step (5), by the use of large scale gearshift and the past nano wire B as welding material of small yardstick gearshift control probe
It is mobile, make probe and nano wire B tip contacts；
Step (6), focus on electron beam makes its solidification simultaneously on the sensitive high-molecular-weight glutenin subunits of the electron beam irradiation of probe tip
Bonding nano wire B；
Step (7), using large scale gearshift and small yardstick gearshift control probe sidesway, is fractureed nano wire using probe
B is simultaneously moved into A surfaces to be welded and contacts, and control probe applies normal pressure, and holding carries out cold welding in 1-30 seconds；Pass through
Electrical testing unit applied voltage, electric current in measure loop simultaneously calculates contact resistivity, when contact resistivity and nano wire sheet
When the resisitivity of body is in error range, represents and contact between the two good；
Step (8), using the electron beam or ion beam etching nano wire B that focus on, makes nano wire B separate with probe；
Step (9), the structure that the nano wire B for being obtained is welded in nanostructured A surfaces to be welded can carry freedom of movement
Spend, and electrical connection is maintained, surface soldered success.
2. a kind of method of room-temperature bonding ITO nano wires according to claim 1, it is characterised in that the small yardstick position
Moving device uses piezoelectricity, and the following yardstick displacement of micron is realized in electrostriction, electroluminescent thermal expansion or magnetostriction.
3. the method for a kind of room-temperature bonding ITO nano wires according to claim 1, it is characterised in that also including following step
Suddenly：
Step (10), cold welding termination process is in repeat step (5) to step (9), wherein step (7)：Filled using large scale displacement
Put and control probe sidesway with small yardstick gearshift, fractureed using probe and nano wire B and be moved into soldered nanometer
Line B one end simultaneously contacts, and control probe applies normal pressure, and holding carries out cold welding in 2-30 seconds；Electricity is applied by electrical testing unit
Press, the electric current in measure loop simultaneously calculates contact resistivity, when contact resistivity and nano wire resisitivity in itself are by mistake
When in difference scope, represent and contact between the two good；
Step (11), repeat step (10) being capable of continuously coupled many nano wire B.
4. the method for a kind of room-temperature bonding ITO nano wires according to claim 1, it is characterised in that by vacuum cavity
It is interior can be by the process of the device real-time monitoring room-temperature bonding ITO nano wires of electron beam patterning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN203292634U (en) * | 2013-05-20 | 2013-11-20 | 南京航空航天大学 | Device for preparing electrode of carbon nanometer tube with controllable length and for detecting electrical conductivity |
| CN103586590A (en) * | 2013-11-12 | 2014-02-19 | 温州大学 | Nanometer welding method based on joule heat |
| CN103624388A (en) * | 2013-11-13 | 2014-03-12 | 中国科学院合肥物质科学研究院 | One-dimensional nanomaterial welding method based on electrically-induced heating effect |
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| CN203292634U (en) * | 2013-05-20 | 2013-11-20 | 南京航空航天大学 | Device for preparing electrode of carbon nanometer tube with controllable length and for detecting electrical conductivity |
| CN103586590A (en) * | 2013-11-12 | 2014-02-19 | 温州大学 | Nanometer welding method based on joule heat |
| CN103624388A (en) * | 2013-11-13 | 2014-03-12 | 中国科学院合肥物质科学研究院 | One-dimensional nanomaterial welding method based on electrically-induced heating effect |
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