CN105731369A - Device and method for bonding indium tin oxide (ITO) nanowires at room temperature - Google Patents
Device and method for bonding indium tin oxide (ITO) nanowires at room temperature Download PDFInfo
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- CN105731369A CN105731369A CN201610105967.5A CN201610105967A CN105731369A CN 105731369 A CN105731369 A CN 105731369A CN 201610105967 A CN201610105967 A CN 201610105967A CN 105731369 A CN105731369 A CN 105731369A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 37
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title abstract description 3
- 239000000523 sample Substances 0.000 claims abstract description 117
- 239000000463 material Substances 0.000 claims abstract description 47
- 238000003466 welding Methods 0.000 claims abstract description 40
- 238000006073 displacement reaction Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000012360 testing method Methods 0.000 claims abstract description 17
- 238000010894 electron beam technology Methods 0.000 claims abstract description 14
- 238000012544 monitoring process Methods 0.000 claims abstract description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000609 electron-beam lithography Methods 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000013068 control sample Substances 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 108010050792 glutenin Proteins 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 4
- 229920000642 polymer Polymers 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 208000032767 Device breakage Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
Abstract
The invention provides a method for bonding indium tin oxide nanowires at room temperature. The method comprises the following steps: arranging a nano structure A to be welded and a nanowire B serving as a welding material on one side face of a probe tip facing to a sample stage, and preparing a polymer solidified material sensitive to electron beam irradiation on the probe tip; controlling a probe to move towards the nanowire B serving as the welding material by using a large scale displacement device and a small scale displacement device to make the probe be contacted with a top end of the nanowire B; bonding and curing the nanowire B by the probe tip; and controlling the probe to move, breaking the nanowire B by the probe and driving the nanowire B to move to an A surface to be welded and be contacted with the A surface, carrying out cold welding, and monitoring the welding process of the nanowire B by an electrical test unit, and wherein it indicates that the circuit is conductive when the contact resistivity between the nanowires is equivalent to the resistivity of the nanowire. The connection between the nanowire B and the probe is etched and disconnected by an electron beam or an ion beam, and the nanowire B is consistently connected with the nanowire A so as to bond the nanowire structures at the room temperature.
Description
Technical field
A kind of method that the present invention relates at room temperature cold bonding nano wire.Belong to advanced material and the technical field of advanced device structure.
Background technology
Electronic device is proposed new requirement by the raising of electronics, the functional requirement of electrical equipment by the development gradually of electronic technology and people.Traditional semiconductor device, based on silicon semiconductor technique, is generally of weak to bending, it is impossible to the problem bearing the device fracture that big mechanical shock causes.Proposition along with flexible semiconductor device and wearable device concept in recent years.Researcher is had to propose the concept of " electronic device can be recovered ".Material or structure needs for preparing this device have when suffering big bending or impacting and produce fracture under applied environment can from the function connected.This function is properly termed as " under room temperature cold bonding ", namely is different from the high temperature melt welding of ordinary meaning, and this device architecture can carry out the reconnect of circuit at room temperature and recover its performance.The critical process related in the preparation of this device and use procedure is the cold bonding of room temperature of nano material and structure.At present, cold bonding has research it has been shown that due to the high activity of the high-specific surface area of nano material and surface atom, can produce in the material of little yardstick.Even so, it practice, owing to particularity and the surface of material surface structure are highly prone to contaminating impurity, most of materials are actually difficult to cold bonding.Just because of this, current most of flexible semiconductor devices abandon using the concept of " can recover electronic device ", then employ organic high score conducting polymer or semiconductive polymer material, because the flexility that organic material has generally had.
Although flexible semiconductor device prepared by organic material can meet some application scenario, but restrict the material parameter such as material transition rate of its performance, tolerable temperature and voltage, toxicity etc. makes its extensive use have certain difficulty, for this, still the research of numerous researcher is had to use conventional semiconductor material preparation can recover electronic device at present, to disclosure satisfy that the application of requirements at the higher level.Tin indium oxide (ITO) material is widely used in transparency conductive electrode at present, has very important status in flexible electronic device.If able to indium tin oxide material is carried out room temperature cold welding then there is very important practice significance.
Summary of the invention
Goal of the invention: the present invention proposes the apparatus and method of a kind of room-temperature bonding ITO nano wire, it is achieved nano thread structure bonding at room temperature.
The technical scheme is that the device of a kind of room-temperature bonding ITO nano wire, including displacement control unit, it is capable of the large scale gearshift of micron scale above displacement, it is capable of the little yardstick gearshift of micron following yardstick displacement, the probe being made of an electrically conducting material and sample stage, built with the electrical testing unit of voltage source and ammeter, have and receive the force cell of dynamometry precision of newton rank and pressure monitoring unit；
Described sample stage is arranged in can passing through electron beam patterning and launching the vacuum cavity of ion beam, conducting resinl is provided with nanostructured the A to be welded and nano wire B as welding material, described nanostructured A to be welded to one side surface and the diameter as the nano wire B of welding material is respectively less than 50 nanometers and is grown in conductive substrates；
Described large scale gearshift, little yardstick gearshift, force cell and probe order are fixedly installed in vacuum cavity, probe pinpoint is rectified sample stage one side surface that can arrange substrate, described large scale gearshift, little yardstick gearshift and load cell signal are connected to the displacement control unit being arranged at outside vacuum cavity, the movement of the three-dimensional of probe is controlled, by the stress of pressure monitoring unit monitoring probe by displacement control unit；
Described electrical testing unit is arranged at outside vacuum cavity, one end is electrically connected to large scale gearshift, one end is electrically connected to sample stage, when probe is directly connected to sample stage, large scale gearshift, little yardstick gearshift, force cell, probe, formation conductive path between sample stage and electrical testing unit.
Further, described sample stage is fixedly installed in vacuum cavity.
Further, described sample stage packaged type is installed in vacuum cavity, sample stage is installed a displacement transducer control sample stage position and moves.
Further, the tip curvature radius of described probe is less than 500 nanometers.
The present invention also provides for the method for the room-temperature bonding ITO nano wire utilizing the device of room-temperature bonding ITO nano wire to realize, and specifically comprises the following steps that
Step (1), chooses nanostructured the A to be welded and nano wire B as welding material, and the described diameter as the nano wire B of welding material less than 50 nanometers and is grown on substrate；
Step (2), the nano wire B using nanostructured A to be welded with as welding material processes 1-10 minute in oxygen gas plasma, power 30-100 watt, air pressure 1-5Pa, oxygen flow 10-100sccm；
Step (3), the nano wire B using nanostructured A to be welded with as welding material inserts the process 30-120 second in UV ozone environment；
Step (4), the nano wire B using nanostructured A to be welded with as welding material is arranged at probe pinpoint and rectifies the side surface to sample stage, and probe tip prepares the conducting polymer curing materials that electron beam irradiation is sensitive；
Step (5), utilizes large scale gearshift and little yardstick gearshift to control probe and moves toward the nano wire B as welding material, make probe and nano wire B tip contact；
Step (6), focuses on electron beam and makes it solidify on the high-molecular-weight glutenin subunits that the electron beam irradiation of probe tip is sensitive and bond nano wire B；
Step (7), utilizes large scale gearshift and little yardstick gearshift to control probe sidesway, uses probe to fracture nano wire B be moved into A surface to be welded and contact, controls probe and apply normal pressure, keep the 1-30 second to carry out cold welding；Applying voltage by electrical testing unit, electric current in measure loop also calculates contact resistivity, when the resisitivity of contact resistivity and nano wire itself is in range of error, represents that contact is well between the two；
Step (8), uses the electron beam or ion beam etching nano wire B that focus on, makes nano wire B separate with probe；
Step (9), the nano wire B obtained be welded in nanostructured A surface to be welded structure can with freedom of movement, and electrical connection be maintained, surface soldered success.
Further, described little yardstick gearshift adopts piezoelectricity, and electrostriction, electroluminescent thermal expansion or magnetostriction realize the following yardstick displacement of micron.
Further, also comprise the steps:
Step (10), repeat step (5) to step (9), wherein in step (7), cold welding process is: utilize large scale gearshift and little yardstick gearshift to control probe sidesway, probe is used to fracture nano wire B be moved into soldered nano wire B one end and contact, control probe and apply normal pressure, keep the 1-30 second to carry out cold welding；Applying voltage by electrical testing unit, electric current in measure loop also calculates contact resistivity, when the resisitivity of contact resistivity and nano wire itself is in range of error, represents that contact is well between the two；
Step (11), repeating step (10) can continuously coupled many nano wire B.
Further, the process of room-temperature bonding ITO nano wire is monitored in real time by the device of electron beam patterning can be passed through in vacuum cavity.Whole processing step simple transparent, real-time high-efficiency.
Beneficial effect: there is good repeatability.Can continuously coupled many nano wires, process repeatability is good.Prepared connection has good electric conductivity.Calculating shows, connects resistance suitable with the resistance of nano wire itself.Connect to achieve and flexibly connect.Embodiment shows, connects and has good degree of freedom, and after many nano wires connect, its mutual alignment can change and its electrical connection is maintained.
Accompanying drawing explanation
Fig. 1 is the structural representation of the device of room-temperature bonding ITO nano wire；Wherein, 1 is displacement control unit；2 is large scale displacement mechanism, for realizing the displacement of micron scale above；3 is little yardstick displacement mechanism, for realizing the displacement of the following yardstick of micron；4 is force cell；5 is probe；6 and 7 nanostructured the A respectively to be welded and nano wire B as welding material；8 is fixing or movable sample stage.If it is movable sample stage, need to connect a displacement controller；9 is electrical testing unit, includes voltage source, ammeter etc.；10 is pressure monitoring unit.
Fig. 2 is welded in another root ITO nano wire for using ITO nano wire.Material processes 1 minute in gas ions, power 60 watts, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure (a) shows original state, and its middle probe contacts with ITO nano wire.Contact with the ITO nano wire on side after the ITO nano wire fracture of figure (b) display contact.After applying a little normal pressure, both are bonded together.
Fig. 3 is welded in another root ITO nano wire for using ITO nano wire.Material processes 1 minute in gas ions, power 60 watts, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure showing, three sections of ITO Nanowire contacts bondings are formed.Nano wire can be bonded together after applying a little lateral pressure.(note: picture amplification is identical with upper figure).
Fig. 4 is welded in another root ITO nano wire for using ITO nano wire.Material processes 1 minute in gas ions, power 60 watts, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure showing, four sections of ITO Nanowire contacts bondings are formed.(note: picture amplification is identical with upper figure).
Fig. 5 uses probe to stretch the four sections of ITO nano wire bond contact formed, it can be seen that it still links together.(note: picture amplification is identical with upper figure).
Fig. 6 is the four sections of ITO nano wire bond contact using probe compression to be formed, it can be seen that it still links together.(note: picture amplification is identical with upper figure).
Fig. 7 is the I-E characteristic figure of nano wire after room-temperature bonding, wherein 1 instruction probe and sample stage short circuit after I-E characteristic, 2 is the I-E characteristic of single ITO nano wire, 3 is that two sections of ITO Nanowire contacts bondings form after current-voltage characteristic, and 4 is that four sections of ITO Nanowire contacts bondings form after current-voltage characteristic.Voltage is voltage, and Current is electric current.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described further.
As shown in Figure 1, a kind of device of room-temperature bonding ITO nano wire, including displacement control unit 1, it is capable of the large scale gearshift 2 of micron scale above displacement, it is capable of the little yardstick gearshift 3 of micron following yardstick displacement, the probe 5 being made of an electrically conducting material and sample stage 8, built with the electrical testing unit 9 of voltage source and ammeter, have and receive the force cell 4 of dynamometry precision of newton rank and pressure monitoring unit 10；The tip curvature radius of described probe 5 is less than 500 nanometers.
Described sample stage 8 is arranged in can passing through electron beam patterning and launching the vacuum cavity of ion beam, conducting resinl is provided with nanostructured the A6 to be welded and nano wire B7 as welding material, described nanostructured A6 to be welded to one side surface and the diameter as the nano wire B7 of welding material is respectively less than 50 nanometers and is grown in conductive substrates；
Described large scale gearshift 2, little yardstick gearshift 3, force cell 4 and probe 5 order are fixedly installed in vacuum cavity, probe 5 tip is just to sample stage one side surface that can arrange substrate, described large scale gearshift 2, little yardstick gearshift 3 and force cell 4 signal are connected to the displacement control unit 1 being arranged at outside vacuum cavity, the movement of the three-dimensional of probe 5 is controlled, by the stress of pressure monitoring unit 10 monitoring probe by displacement control unit 1；
Described electrical testing unit 9 is arranged at outside vacuum cavity, one end is electrically connected to large scale gearshift 2, one end is electrically connected to sample stage 8, when probe is directly connected to sample stage 8, large scale gearshift 2, little yardstick gearshift 3, force cell 4, probe 5, formation conductive path between sample stage 8 and electrical testing unit 9.
Wherein, described sample stage 8 is fixedly installed in vacuum cavity.Or packaged type is installed in vacuum cavity, sample stage is installed a displacement transducer control sample stage position and moves.
The present invention also provides for the method for the room-temperature bonding ITO nano wire that a kind of device utilizing room-temperature bonding ITO nano wire realizes, and specifically comprises the following steps that
Step (1), chooses nanostructured the A to be welded and nano wire B as welding material, and the described diameter as the nano wire B of welding material less than 50 nanometers and is grown on substrate；
Step (2), the nano wire B using nanostructured A to be welded with as welding material processes 1-10 minute in oxygen gas plasma, power 30-100 watt, air pressure 1-5Pa, oxygen flow 10-100sccm；
Step (3), the nano wire B using nanostructured A to be welded with as welding material inserts the process 30-120 second in UV ozone environment；
Step (4), the nano wire B using nanostructured A to be welded with as welding material is arranged at probe pinpoint and rectifies the side surface to sample stage, and probe tip prepares the conducting polymer curing materials that electron beam irradiation is sensitive；
Step (5), utilizes large scale gearshift and little yardstick gearshift to control probe and moves toward the nano wire B as welding material, make probe and nano wire B tip contact；
Step (6), focuses on electron beam and makes it solidify on the high-molecular-weight glutenin subunits that the electron beam irradiation of probe tip is sensitive and bond nano wire B；
Step (7), utilizes large scale gearshift and little yardstick gearshift to control probe sidesway, uses probe to fracture nano wire B be moved into A surface to be welded and contact, controls probe and apply normal pressure, keep the 1-30 second to carry out cold welding；Applying voltage by electrical testing unit, electric current in measure loop also calculates contact resistivity, when the resisitivity of contact resistivity and nano wire itself is in range of error, represents that contact is well between the two；
Step (8), uses the electron beam or ion beam etching nano wire B that focus on, makes nano wire B separate with probe；
Step (9), the nano wire B obtained be welded in nanostructured A surface to be welded structure can with freedom of movement, and electrical connection be maintained, surface soldered success.
Step (10), repeat step (5) to step (9), wherein in step (7), cold welding process is: utilize large scale gearshift and little yardstick gearshift to control probe sidesway, probe is used to fracture nano wire B be moved into soldered nano wire B one end and contact, control probe and apply normal pressure, keep the 1-30 second to carry out cold welding；Applying voltage by electrical testing unit, electric current in measure loop also calculates contact resistivity, when the resisitivity of contact resistivity and nano wire itself is in range of error, represents that contact is well between the two；
Step (11), repeating step (10) can continuously coupled many nano wire B.
Wherein, described little yardstick gearshift adopts piezoelectricity, and electrostriction, electroluminescent thermal expansion or magnetostriction realize the following yardstick displacement of micron.The process of room-temperature bonding ITO nano wire is monitored in real time by the device of electron beam patterning can be passed through in vacuum cavity.Whole processing step is simple, real-time high-efficiency.
Embodiment 1: as in figure 2 it is shown, use ITO nano wire to be welded in another root ITO nano wire.Material processes 1 minute in gas ions, power 60 watts, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure (a) shows original state, and its middle probe contacts with ITO nano wire.Contact with the ITO nano wire on side after the ITO nano wire fracture of figure (b) display contact.Keep after applying a little normal pressure about 1 second making both be bonded together.
Embodiment 2: as it is shown on figure 3, use ITO nano wire to be welded in another root ITO nano wire.Material processes 1 minute in gas ions, power 60 watts, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Figure showing, three sections of ITO Nanowire contacts bondings are formed.Keep after applying a little lateral pressure about 30 seconds making to be bonded together by nano wire.(note: picture amplification is identical with upper figure).
Embodiment 3: as shown in Figure 4, uses ITO nano wire to be welded in another root ITO nano wire.Material processes 1 minute in gas ions, power 60 watts, air pressure 2Pa, oxygen flow 50sccm.Probe uses CNT.Keep after applying a little normal pressure about 10 seconds making both be bonded together.Figure showing, four sections of ITO Nanowire contacts bondings are formed.(note: picture amplification is identical with upper figure).
Embodiment 4: as it is shown in figure 5, use probe to stretch the four sections of ITO nano wire bond contact formed, it can be seen that it still links together.(note: picture amplification is identical with upper figure).
Embodiment 5: as shown in Figure 6, uses four sections of ITO nano wire bond contact that probe compression is formed, it can be seen that it still links together.(note: picture amplification is identical with upper figure).
Fig. 7 is the I-E characteristic figure of nano wire after room-temperature bonding, wherein 1 instruction probe and sample stage short circuit after I-E characteristic, 2 is the I-E characteristic of single ITO nano wire, 3 is that two sections of ITO Nanowire contacts bondings form after current-voltage characteristic, and 4 is that four sections of ITO Nanowire contacts bondings form after current-voltage characteristic.
In sum, the method that the present invention realizes, there is good repeatability.Can continuously coupled many nano wires, process repeatability is good.Prepared connection has good electric conductivity.Calculating shows, connects resistance suitable with the resistance of nano wire itself.Connect to achieve and flexibly connect.Embodiment shows, connects and has good degree of freedom, and after many nano wires connect, its mutual alignment can change and its electrical connection is maintained.
The above is only the preferred embodiment of the present invention; it is noted that, for those skilled in the art; under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (8)
1. the device of a room-temperature bonding ITO nano wire, it is characterized in that, including displacement control unit (1), it is capable of the large scale gearshift (2) of micron scale above displacement, it is capable of the little yardstick gearshift (3) of micron following yardstick displacement, the probe (5) being made of an electrically conducting material and sample stage (8), built with the electrical testing unit (9) of voltage source and ammeter, have and receive the force cell (4) of dynamometry precision of newton rank and pressure monitoring unit (10)；
Described sample stage (8) is arranged in can passing through electron beam patterning and launching the vacuum cavity of ion beam, one side surface is provided with nanostructured A (6) the to be welded and nano wire B (7) as welding material by conducting resinl, and described nanostructured A (6) to be welded and the diameter as the nano wire B (7) of welding material are respectively less than 50 nanometers and are grown in conductive substrates；
Described large scale gearshift (2), little yardstick gearshift (3), force cell (4) and probe (5) order are fixedly installed in vacuum cavity, probe (5) is most advanced and sophisticated just to sample stage one side surface that can arrange substrate, described large scale gearshift (2), little yardstick gearshift (3) and force cell (4) signal are connected to the displacement control unit (1) being arranged at outside vacuum cavity, the movement of the three-dimensional of probe (5) is controlled by displacement control unit (1), stress by pressure monitoring unit (10) monitoring probe；
Described electrical testing unit (9) is arranged at outside vacuum cavity, one end is electrically connected to large scale gearshift (2), one end is electrically connected to sample stage (8), when probe is directly connected to sample stage (8), between large scale gearshift (2), little yardstick gearshift (3), force cell (4), probe (5), sample stage (8) and electrical testing unit (9), form conductive path.
2. the device of a kind of room-temperature bonding ITO nano wire according to claim 1, it is characterised in that described sample stage (8) is fixedly installed in vacuum cavity.
3. the device of a kind of room-temperature bonding ITO nano wire according to claim 1, it is characterised in that described sample stage (8) packaged type is installed in vacuum cavity, sample stage is installed a displacement transducer control sample stage position and moves.
4. the device of a kind of room-temperature bonding ITO nano wire according to claim 1, it is characterised in that the tip curvature radius of described probe (5) is less than 500 nanometers.
5. the method utilizing the room-temperature bonding ITO nano wire of the device realization of the arbitrary described room-temperature bonding ITO nano wire of claim 1-4, it is characterised in that specifically comprise the following steps that
Step (1), chooses nanostructured the A to be welded and nano wire B as welding material, and the described diameter as the nano wire B of welding material less than 50 nanometers and is grown on substrate；
Step (2), the nano wire B using nanostructured A to be welded with as welding material processes 1-10 minute in oxygen gas plasma, power 30-100 watt, air pressure 1-5Pa, oxygen flow 10-100sccm；
Step (3), the nano wire B using nanostructured A to be welded with as welding material inserts the process 30-120 second in UV ozone environment；
Step (4), the nano wire B using nanostructured A to be welded with as welding material is arranged at probe pinpoint and rectifies the side surface to sample stage, and probe tip prepares the conducting polymer curing materials that electron beam irradiation is sensitive；
Step (5), utilizes large scale gearshift and little yardstick gearshift to control probe and moves toward the nano wire B as welding material, make probe and nano wire B tip contact；
Step (6), focuses on electron beam and makes it solidify on the high-molecular-weight glutenin subunits that the electron beam irradiation of probe tip is sensitive and bond nano wire B；
Step (7), utilizes large scale gearshift and little yardstick gearshift to control probe sidesway, uses probe to fracture nano wire B be moved into A surface to be welded and contact, controls probe and apply normal pressure, keep the 1-30 second to carry out cold welding；Applying voltage by electrical testing unit, electric current in measure loop also calculates contact resistivity, when the resisitivity of contact resistivity and nano wire itself is in range of error, represents that contact is well between the two；
Step (8), uses the electron beam or ion beam etching nano wire B that focus on, makes nano wire B separate with probe；
Step (9), the nano wire B obtained be welded in nanostructured A surface to be welded structure can with freedom of movement, and electrical connection be maintained, surface soldered success.
6. the method for a kind of room-temperature bonding ITO nano wire according to claim 5, it is characterised in that described little yardstick gearshift adopts piezoelectricity, and electrostriction, electroluminescent thermal expansion or magnetostriction realize the following yardstick displacement of micron.
7. the method for a kind of room-temperature bonding ITO nano wire according to claim 5, it is characterised in that also comprise the steps:
Step (10), repeat step (5) to step (9), wherein in step (7), cold welding process is: utilize large scale gearshift and little yardstick gearshift to control probe sidesway, probe is used to fracture nano wire B be moved into soldered nano wire B one end and contact, control probe and apply normal pressure, keep the 2-30 second to carry out cold welding；Applying voltage by electrical testing unit, electric current in measure loop also calculates contact resistivity, when the resisitivity of contact resistivity and nano wire itself is in range of error, represents that contact is well between the two；
Step (11), repeating step (10) can continuously coupled many nano wire B.
8. the method for a kind of room-temperature bonding ITO nano wire according to claim 5, it is characterised in that monitor the process of room-temperature bonding ITO nano wire by the device of electron beam patterning can be passed through in vacuum cavity in real time.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610105967.5A CN105731369B (en) | 2016-02-26 | 2016-02-26 | A kind of apparatus and method of room-temperature bonding ITO nano wires |
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| CN201610105967.5A CN105731369B (en) | 2016-02-26 | 2016-02-26 | A kind of apparatus and method of room-temperature bonding ITO nano wires |
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| CN105731369A true CN105731369A (en) | 2016-07-06 |
| CN105731369B CN105731369B (en) | 2017-05-31 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106513959A (en) * | 2016-12-19 | 2017-03-22 | 华中科技大学 | Welding method for silver nanowires |
| CN117464155A (en) * | 2023-12-28 | 2024-01-30 | 合肥国镜仪器科技有限公司 | Nanowire welding method and welding device |
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| US20130199034A1 (en) * | 2012-02-04 | 2013-08-08 | Mehdi M. Yazdanpanah | Methods and Apparatuses of Using Metal Needle Arrays for Specimen Lift-Out and Circuit Edit |
| CN203292634U (en) * | 2013-05-20 | 2013-11-20 | 南京航空航天大学 | Device for preparing electrode of carbon nanometer tube with controllable length and for detecting electrical conductivity |
| CN103586590A (en) * | 2013-11-12 | 2014-02-19 | 温州大学 | Nanometer welding method based on joule heat |
| CN103624388A (en) * | 2013-11-13 | 2014-03-12 | 中国科学院合肥物质科学研究院 | One-dimensional nanomaterial welding method based on electrically-induced heating effect |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130199034A1 (en) * | 2012-02-04 | 2013-08-08 | Mehdi M. Yazdanpanah | Methods and Apparatuses of Using Metal Needle Arrays for Specimen Lift-Out and Circuit Edit |
| CN203292634U (en) * | 2013-05-20 | 2013-11-20 | 南京航空航天大学 | Device for preparing electrode of carbon nanometer tube with controllable length and for detecting electrical conductivity |
| CN103586590A (en) * | 2013-11-12 | 2014-02-19 | 温州大学 | Nanometer welding method based on joule heat |
| CN103624388A (en) * | 2013-11-13 | 2014-03-12 | 中国科学院合肥物质科学研究院 | One-dimensional nanomaterial welding method based on electrically-induced heating effect |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106513959A (en) * | 2016-12-19 | 2017-03-22 | 华中科技大学 | Welding method for silver nanowires |
| CN117464155A (en) * | 2023-12-28 | 2024-01-30 | 合肥国镜仪器科技有限公司 | Nanowire welding method and welding device |
| CN117464155B (en) * | 2023-12-28 | 2024-03-15 | 合肥国镜仪器科技有限公司 | Nanowire welding method and welding device |
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| CN105731369B (en) | 2017-05-31 |
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