CN103586590A - Nanometer welding method based on joule heat - Google Patents
Nanometer welding method based on joule heat Download PDFInfo
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- CN103586590A CN103586590A CN201310561021.6A CN201310561021A CN103586590A CN 103586590 A CN103586590 A CN 103586590A CN 201310561021 A CN201310561021 A CN 201310561021A CN 103586590 A CN103586590 A CN 103586590A
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- welded
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
Abstract
The invention discloses a nanometer welding method based on joule heat, and belongs to the field of nanometer machining and measuring. According to the technical scheme, in the vacuum environment, after proper voltages are applied to two metal probes, the probe points of the two probes are made to make contact, joule heat is generated instantly, nanometer materials making contact with one of the probe points are made to fuse or the probe point making contact with the nanometer materials is made to fuse, and therefore the probe points of the metal probes and the nanometer materials are welded. Through two welding processes which are that low-melting-point nanometer materials (Sn, In and the like) are welded to the probe points of the probes, then, the low-melting-point materials serve as welding flux to be welded to target nanometer materials, and therefore it can be guaranteed that the structure of the target nanometer materials is not damaged. The method has important significance in research and application of nanometer materials, and has important application prospects in the aspects of control over nanometer materials, device construction and in-situ electrical measurement.
Description
Technical field
Nanoprocessing of the present invention and fields of measurement, manipulation, the device that specifically refers to a kind of nano-weld method based on Joule heat and nano material thereof constructed the application with original position electrical measurement aspect.
Background technology
The development of nano material solder technology is the important branch of nanometer science and technology research field.Nano-weld technology has important application aspect prepared by the manipulation in nano material especially nano material, measurement and device.Nano material has special electricity, calorifics, mechanics and optical property, and the wherein research of electrology characteristic, generally need use micro-nano processing technology, and process complexity and cost are high.In recent years, the exploitation of the original position Study system being comprised of SEM (SEM), nano-manipulation instrument (Nanomanipulators), electrical measurement instrument (SEM-nano-manipulation instrument system), being expected to provides a kind of electricity characteristic measuring method simply, intuitively, efficiently and cheaply for nano material.But the electrology characteristic based on this system in site measurement nano material, has a key issue urgently to be resolved hurrily, i.e. the non-ohmic contact problem of metal probe and detected materials.In addition, a little less than the combination of probe and nano material (except CNT etc.) relies on van der Waals interaction purely, be not enough to support material to carry out Three dimensional steerable, for example, be difficult to optionally to obtain single nanostructured from nanostructured bunch and carry out electricity characteristic measuring or carry out constructing of device, limited the range of application of this system.
At present, the in-situ nano control system of available technology adopting based on FIB (FIB), contributes to overcome the above problems.Such as utilize FIB at the contact point in-situ deposition noble metal of detected materials and probe as Pt, Pd etc., improve the firmness of contact point between material and probe.But FIB system has following shortcoming: (1) is expensive, and maintenance cost is high; (2) welding material kind is limited, considers the reason of work function, with regard to original position electrical measurement, can not improve contacting of some material and probe.
Another technique is to utilize the e-beam induced deposition of SEM-nano-probe system (EBID), and this technique can improve probe and contact the method for firmness with material, and its technical scheme is to use electron beam at contact point Long-Duration Exposure, thus the upper agraphitic carbon [Zhang of deposition, Y. L., Li, J., To, S., Zhang, Y., Ye, X., You, L., Sun, Y, Nanotechnology, 2012,23,065304.].The method can to a certain degree improve contact point firmness, but is also not enough to meet to handle technological requirement, and the amorphous carbon of deposition for electronic transmission performance measurement aspect without any effect.At present, some nano-weld technology are developed and are applied to improve two kinds of connections between metal Nano structure.The original position thermal weld that obtains other two Au nanostructureds by sacrificing Au nanostructured is developed [Y. Peng, T. Cullis, B. Inkson, Nano. Lett., 2009,9,91-96].Tohmyoh group of Northeastern University original position has been studied " cut-out " and " welding " behavior of single Pt nanostructured, and has set up related physical model [H. Tohmyoh, S. Fukui, Phys. Rev. B, 2009,80,155403].
At present, based on ESEM-nano-probe system, still do not have a kind of simple, controlled method to weld nano material and probe tip.
Summary of the invention
The object of the invention is the shortcoming and defect existing in order to overcome prior art, and provide a kind of nano-weld technique based on Joule heat, this technique is welded this technology to metal, nanometer semiconductor structure and probe, improved the maneuvering capability to these materials, and improve the Ohmic contact between material and probe, be conducive to the electronic transmission performance of in site measurement material.Manipulation, the device that can be widely used in nano material are constructed and original position electrical measurement aspect.
For realizing first object of the present invention, technical scheme of the present invention is in a vacuum, and the needle point of the needle point of metal probe to be welded and the second metal probe is contacted at the pad of nano-component to be welded; And to applying voltage between metal probe to be welded and the second metal probe, forming circuit loop, the Joule heat that utilizes the contact resistance of the needle point that metal probe to be welded and the second metal probe contact to produce, this Joule heat at least makes the pad of nano-component, the fusing of one of needle point of the needle point of metal probe to be welded or the second metal probe, thereby the needle point of metal probe to be welded and this nano-component to be welded are welded at pad.
Further arranging is to comprise the following steps:
(1) needle point of metal probe to be welded is contacted with the pad of nano-component to be welded;
(2) will between the second metal probe and metal probe to be welded, apply voltage, then the needle point of the second metal probe is moved to the pad of nano-component to be welded, the needle point of the second metal probe and the needle point of metal probe to be welded are contacted, forming circuit loop at the pad place of nano-component to be welded;
(3) Joule heat that utilizes this circuit loop to produce makes the needle point of metal probe to be welded and this nano-component to be welded weld at pad.
Result of study shows, which first applies voltage and contacts, and reliability, efficiency are higher.Main cause is, if adopt the second metal probe and the metal probe needle point to be welded after-applied voltage that contacts, when handling nano-probe system and moving the second metal probe and contact metal probe needle point to be welded, inevitably there are small vibrations, cause the nano-component to be welded that contacted again separated with metal probe needle point to be welded.When nano-component to be welded comes off after metal probe needle point to be welded, the Joule heat producing between the needle point of the second metal probe and the needle point of metal probe to be welded can not be delivered to nano-component to be welded, so nano-component to be welded can not be melted, more can not weld with metal probe to be welded.And adopt, arrange, the moment that the needle point of the second metal probe and metal probe to be welded contacts so, the huge Joule heat of local generation causes nano-component fusing to be welded and welds with metal probe to be welded, and the nano-component to be welded after welding can be because of vibrations and metal probe disengaging to be welded.
Further arrange is that the fusing point of described metal probe to be welded and the second metal probe is lower than the fusing point of the pad of nano-component to be welded.By this setting, make Joule heat first melt metal probe to be welded or the second metal probe, thereby contribute to prevent that nano-component to be welded structure in welding process from not destroyed because of thawing.
In order to protect nano-component to be welded structure in welding process, because of thawing, do not destroyed; the present invention can also adopt following setting; at the needle point of the second metal probe and the needle point of metal probe to be welded before the pad of nano-component to be welded contacts; scolder by the upper fusing point of needle point place welding of metal probe to be welded or the second metal probe lower than the pad fusing point of nano-component to be welded, and then carry out subsequent step.
Further arranging is that the method is to be undertaken by being arranged in the nano-probe system in SEM.
Further arrange be the pattern of described nano-component to be welded for being particle, line, band or sheet, it comprises semiconductor nano element and metal material nano-component.
The voltage that the application applies and holding time of voltage, to produce, joule heat energy meets that Joule heat at least makes the pad of nano-component, the fusing of one of needle point of the needle point of metal probe to be welded or the second metal probe is as the criterion, and generally speaking, voltage is 1-3V.
The second metal probe in foregoing and the voltage swing between metal probe to be welded, depend on the circumstances.Such as, the system that two probes of the nano silver wire of 100 nm diameters, 100 nm radius of curvature form, between common two probes, applying 1-3 V can instant melting nano silver wire.
The contacting points position of the second metal probe and metal probe to be welded is very crucial, likely determines that whether welding is successful.From principle, analyze, execute the moment of biased two probe contacts, because contact resistance is far longer than the resistance of probe own, at contact point, produce huge heat.The system that two probes, nano wire form due in high vacuum environment (scanning electron microscope example chamber) can not dispel the heat by gas, can only be by three self diffusion.Obviously, two probe contact point distance objective nano wires are nearer, and nano wire easier " reception " melts to heat, and then forms pad.From another angle, consider, the position that the second metal probe touches metal probe to be welded from the tip of metal probe to be welded more close to, both contacts area are less, resistance is larger, according to Ohm's law, moment produces more heat, is more conducive to the generation of welding, or makes nano wire melt necessary voltage (threshold value) reduction.
The nano-weld technology based on Joule heat that the present invention proposes, main application has three aspects: (1) is because pad is firm, nano wire can move to arbitrarily target area along with probe in the limited field of sample platform of scanning electronic microscope displacement and probe system displacement, by mechanical means, be discharged at this region, wait for next step processing, application; (2) based on this technology, improve maneuvering capability, can construct out various nanostructureds; (3) welding has improved the contact between target nano material and probe, has reduced resistance, is conducive to the electric property of accurate in site measurement nano wire.
Advantage of the present invention is: can by target nanostructured and metal probe (needle point welds, this pad than purely relying on the contact point of Van der Waals force combination stable, firmly.Obviously, this firmly pad have two aspect important application: (1) electrical measurement aspect in position, can improve the contact between probe and material, thereby reduce contact resistance; (2) greatly improved the maneuvering capability to nano material, based on this manipulation technology, can build the various devices (such as right-angled intersection heterojunction structure) with special construction, these structures are to be difficult to by chemical method directly syntheticly, for the basic and applied research in nanometer science and technology field, have very important meaning.
Below in conjunction with specification drawings and specific embodiments, the present invention is described further.
Accompanying drawing explanation
Fig. 1. the nano-weld technical matters schematic diagram based on Joule heat;
In Fig. 1 (a) under scanning electron microscope observation state, metal nanometer line (NW, corresponding nano-component to be welded, lower with), probe 1(T1, corresponding metal probe to be welded, lower with) and probe 2(T2, corresponding the second metal probe, lower together); (b) probe 1 contact nanometer line one end; (c) between probe 2 and probe 1, apply after suitable voltage traveling probe 2 contact probes 1; (d) two probe Contacts, the fusing of metal nanometer line one end and probe 1 welding.
The artwork of Fig. 2 embodiment of the present invention 1;
In Fig. 2, (a) probe 1 contact target nano silver wire; (2) probe 2 and probe 1 apply after voltage 1.5 V, traveling probe 2 contact probes 1, moment nano silver wire melt and be welded on probe 1; (b)-(f) shift this nano silver wire to the position needing;
The artwork of Fig. 3 embodiment of the present invention 2;
In Fig. 3, (a) be similar to welding nano silver wire, Sn particle is welded on probe 1; (b) and (c) traveling probe 1, makes Sn particle contact with target InAs nano wire, between probe 2 and probe 1, apply after voltage 2 V, and traveling probe 2 contact probes 1, the Joule heat that moment produces welds together Sn particle and InAs nano wire; (d)-(f) shift this InAs nano wire to being with markd SiO2/Si substrate surface; (g) prepare single InAs nano-wire devices; (h) the I-V curve of this device.
The specific embodiment
Below by embodiment, the present invention is specifically described; only be used to further illustrate the present invention; can not be interpreted as limiting the scope of the present invention, the technician in this field can make some nonessential improvement and adjustment to the present invention according to the content of foregoing invention.
Embodiment 1: as shown in Figure 2, based on Joule heat nano-weld technology, single nano silver wire and tungsten tipped probe are welded, and this nano silver wire is extracted and transfers to assigned address from its cluster.
Concrete steps are as follows:
(1) wet chemistry method synthesis of silver nano-wire; With the tungsten filament of 0.5 mm diameter, be that raw material is prepared tungsten tip by electrochemical erosion method.
(2) nano silver wire preparing is dispersed in ethanol, and this mixed liquor is added drop-wise to copper sample platform surface, put into scanning electron microscope example chamber.
(3) preparing tungsten tipped probe, be installed to the indoor nano-probe system of scanning electron microscope example, and probe is connected with extraneous semiconductor parameter measuring system.
(4) scanning electron microscope example chamber is evacuated to after suitable vacuum degree, by nano-probe system an end in contact of probe tip and target nano silver wire, as Fig. 2 a.
(5) making alive 1.5 V between probe 1 and probe 2, and traveling probe 2 contact probe 1 tip portions, the Joule heat that moment produces makes the fusing of nano silver wire one end and welds with probe 1, as Fig. 2 b.
(6) nano silver wire is along with probe 2 is transferred to appropriate place, and utilizes probe 1 Mechanical Method to cut off that one end of nano silver wire and probe 2, makes nano silver wire be fixed on assigned address, as Fig. 2 c-e.
Embodiment 2: as shown in Figure 3,
(1) molecular beam epitaxy growth InAs nano wire; Thermal evaporation synthesizes Sn nanostructured; With the tungsten filament of 0.5 mm diameter, be that raw material is prepared tungsten tip by electrochemical erosion method.
(2) the Sn nanostructured of Si substrate surface growth is put into scanning electron microscope example chamber, preparing tungsten tipped probe, be installed to the indoor nano-probe system of scanning electron microscope example, and probe is connected with extraneous semiconductor parameter measuring system.
(3) repeat step (4) and (5) in embodiment 1.Attention: just target nano material is replaced by Sn nanostructured, all the other experimentations are identical.
(4), after step (3), Sn nano particle has been gone up in probe 1 end welding, as shown in Figure 3 a.
(5) handle the probe with Sn particle, make Sn particle and target InAs nano wire one end in contact, and contacting the probe (applying in advance voltage 2 V between the two) with Sn particle with another probe, the Joule heat that moment produces makes Sn particle and the welding of InAs nano wire, as Fig. 3 b and c.Because Sn fusing point is far smaller than InAs, so guaranteed in welding process that InAs nano thread structure is not destroyed.
(6) nano wire is transferred to mark (being convenient to process device) SiO2/Si substrate surface, and become device by processes such as conventional beamwriter lithography, metal deposit and peel off, as figure d-g.
With conventional semiconductor parameter measuring system, tested the I-V characteristic of this device, as Fig. 3 h.
Claims (6)
1. the nano-weld method based on Joule heat, is characterized in that: in a vacuum, the needle point of the needle point of metal probe to be welded and the second metal probe is contacted at the pad of nano-component to be welded; And to applying voltage between metal probe to be welded and the second metal probe, forming circuit loop, the Joule heat that utilizes the contact resistance of the needle point that metal probe to be welded and the second metal probe contact to produce, this Joule heat at least makes the pad of nano-component, the fusing of one of needle point of the needle point of metal probe to be welded or the second metal probe, thereby the needle point of metal probe to be welded and this nano-component to be welded are welded at pad.
2. a kind of nano-weld technique based on Joule heat according to claim 1, is characterized in that comprising the following steps:
(1) needle point of metal probe to be welded is contacted with the pad of nano-component to be welded;
(2) will between the second metal probe and metal probe to be welded, apply voltage, then the needle point of the second metal probe is moved to the pad of nano-component to be welded, the needle point of the second metal probe and the needle point of metal probe to be welded are contacted, forming circuit loop at the pad place of nano-component to be welded;
(3) Joule heat that utilizes this circuit loop to produce makes the needle point of metal probe to be welded and this nano-component to be welded weld at pad.
3. a kind of nano-weld technique based on Joule heat according to claim 1 and 2, is characterized in that: described metal probe to be welded and the fusing point of the second metal probe are lower than the fusing point of the pad of nano-component to be welded.
4. a kind of nano-weld technique based on Joule heat according to claim 1 and 2, it is characterized in that: the needle point of the second metal probe with the needle point of metal probe to be welded before the pad of nano-component to be welded contacts, scolder by the upper fusing point of needle point place welding of metal probe to be welded or the second metal probe lower than the pad fusing point of nano-component to be welded, and then carry out subsequent step.
5. a kind of nano-weld technique based on Joule heat according to claim 1, is characterized in that: the method is to be undertaken by being arranged in the nano-probe system in SEM.
6. a kind of nano-weld technique based on Joule heat according to claim 1, is characterized in that: the pattern of described nano-component to be welded is for being particle, line, band or sheet, and it comprises semiconductor nano element and metal material nano-component.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104942455A (en) * | 2015-05-14 | 2015-09-30 | 西安交通大学 | Low-temperature self-welding method of carbon-coating copper nanowires |
| CN104986727A (en) * | 2015-05-19 | 2015-10-21 | 东华大学 | In situ control method for migration of alloy liquid in solid |
| CN105731369A (en) * | 2016-02-26 | 2016-07-06 | 东南大学 | Device and method for bonding indium tin oxide (ITO) nanowires at room temperature |
| CN109231162A (en) * | 2018-09-07 | 2019-01-18 | 厦门大学 | A kind of method of seamless welding carbon nanotube |
| CN111268722A (en) * | 2020-02-28 | 2020-06-12 | 东南大学 | Method for preparing tin disulfide with vertical array structure at normal temperature in situ |
| CN111620298A (en) * | 2020-05-28 | 2020-09-04 | 武汉大学 | Method for cutting metal nano structure, assembling nano device and characterizing nano device in situ |
| CN113578222A (en) * | 2021-07-12 | 2021-11-02 | 浙江大学 | Nanocomposite synthesis device based on instantaneous high-temperature Joule heating method, preparation method and application |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104942455A (en) * | 2015-05-14 | 2015-09-30 | 西安交通大学 | Low-temperature self-welding method of carbon-coating copper nanowires |
| CN104942455B (en) * | 2015-05-14 | 2017-02-22 | 西安交通大学 | Low-temperature self-welding method of carbon-coating copper nanowires |
| CN104986727A (en) * | 2015-05-19 | 2015-10-21 | 东华大学 | In situ control method for migration of alloy liquid in solid |
| CN105731369A (en) * | 2016-02-26 | 2016-07-06 | 东南大学 | Device and method for bonding indium tin oxide (ITO) nanowires at room temperature |
| CN105731369B (en) * | 2016-02-26 | 2017-05-31 | 东南大学 | A kind of apparatus and method of room-temperature bonding ITO nano wires |
| CN109231162A (en) * | 2018-09-07 | 2019-01-18 | 厦门大学 | A kind of method of seamless welding carbon nanotube |
| CN111268722A (en) * | 2020-02-28 | 2020-06-12 | 东南大学 | Method for preparing tin disulfide with vertical array structure at normal temperature in situ |
| CN111268722B (en) * | 2020-02-28 | 2023-05-26 | 东南大学 | Method for preparing stannic disulfide with vertical array structure at normal temperature in situ |
| CN111620298A (en) * | 2020-05-28 | 2020-09-04 | 武汉大学 | Method for cutting metal nano structure, assembling nano device and characterizing nano device in situ |
| CN111620298B (en) * | 2020-05-28 | 2023-09-15 | 武汉大学 | Method for cutting metal nano structure, assembling nano device and in-situ characterization of nano device |
| CN113578222A (en) * | 2021-07-12 | 2021-11-02 | 浙江大学 | Nanocomposite synthesis device based on instantaneous high-temperature Joule heating method, preparation method and application |
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Application publication date: 20140219 |