CN105702806A - Metallization method for crystalline silicon solar cell, crystalline silicon solar cell and crystalline silicon solar cell assembly and crystalline silicon solar cell system - Google Patents
Metallization method for crystalline silicon solar cell, crystalline silicon solar cell and crystalline silicon solar cell assembly and crystalline silicon solar cell system Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 42
- 238000001465 metallisation Methods 0.000 title abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 89
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052709 silver Inorganic materials 0.000 claims abstract description 39
- 239000004332 silver Substances 0.000 claims abstract description 39
- 238000005245 sintering Methods 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 127
- 229910052710 silicon Inorganic materials 0.000 claims description 127
- 239000010703 silicon Substances 0.000 claims description 127
- 239000013078 crystal Substances 0.000 claims description 122
- 230000011218 segmentation Effects 0.000 claims description 57
- 239000004020 conductor Substances 0.000 claims description 40
- 238000009792 diffusion process Methods 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 239000002002 slurry Substances 0.000 claims description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000010959 steel Substances 0.000 claims description 9
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a metallization method for a crystalline silicon solar cell, the crystalline silicon solar cell and a crystalline silicon solar cell assembly and a crystalline silicon solar cell system. The metallization method for the crystalline silicon solar cell comprises the steps as follows: an electrode on the back surface of a crystalline silicon solar cell matrix is printed and prepared; primary gates and segmented secondary gates are printed on the front surface of the crystalline silicon solar cell matrix with a silver paste or an aluminum-doped silver paste; conductive wires are paved on the segmented secondary gates; the crystalline silicon solar cell matrix paved with the conductive wires is subjected to sintering treatment; and the sintered conductive wires, the segmented secondary gates and the primary gates form ohmic contact. The metallization method has the beneficial effects that the secondary gates are formed by replacing partial silver paste with a copper wire, so that surface recombination caused by the silver secondary gates is reduced; and the production cost of the metallization procedure is also reduced. Compared with an existing front metallization process, the metallization method can save about 40%-60% of silver paste consumption. Furthermore, the solar cell prepared by the method is good in universality.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to the method for metallising of a kind of crystal silicon solar energy battery and battery and assembly, system。
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electrical energy。Middle metallization is a committed step in manufacture of solar cells operation, and photo-generated carrier must flow through the conductive electrode of metallization formation could obtain effectively collection。At present, method for metallising the most frequently used in volume production solaode is screen-printed metal slurry method, by printing silver slurry or mixing aluminum paste, through high-temperature sintering process, forms the metallization possessing the functions such as electrical contact, electricity conduction, welding interconnection。In order to form good Ohmic contact and take into account solderability, the front surface of crystal silicon solar energy battery generally prints silver slurry or mixes aluminum paste, but silver slurry or to mix the price of aluminum paste general all costly, causes that the accounting in solaode manufacturing cost containing silver paste remains high。Thus find and a kind of can reduce containing silver paste use amount, simultaneously can meet again Ohmic contact and front-side metallization method that solderability requires becomes the key job reducing manufacture of solar cells cost。
Summary of the invention
Present invention aims to the deficiencies in the prior art, it is provided that the method for metallising of the solaode of a kind of low cost and battery and assembly, system。The method for metallising of described solaode can significantly decrease and make consumption containing silver paste, thus reducing the production cost of solaode。
The present invention provides the method for metallising of a kind of crystal silicon solar energy battery, and its technical scheme is:
The method for metallising of a kind of crystal silicon solar energy battery, comprises the following steps: the electrode of crystal silicon solar energy battery matrix back surface is prepared in printing, and the front surface at crystal silicon solar energy battery matrix uses silver slurry or mixes aluminum paste printing main grid and segmentation pair grid；Segmentation pair grid are laid conductor wire, afterwards the crystal silicon solar energy battery matrix laying conductor wire is sintered, the peak temperature of sintering is 850～950 DEG C, after sintering, segmentation pair grid form Ohmic contact with front surface emitter stage, conductor wire forms Ohmic contact with segmentation pair grid and main grid, completes the making of crystal silicon solar energy battery。
Wherein, described conductor wire is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines。
Wherein, the shape of described segmentation pair grid is discrete round dot, and the diameter of described discontinuous round dot is 30-300 micron, and the diameter of described conductor wire is 40-80 micron。
Wherein, the shape of described segmentation pair grid is discrete lines, and the length of described discontinuous lines is 40-300 micron, and the width of described discontinuous lines is 40-300 micron, and the diameter of described conductor wire is 40-80 micron；Discrete lines are perpendicular to main grid, parallel main grid or have certain angle of inclination with main grid。
Wherein, described crystal silicon solar energy battery matrix is P-type crystal silicon solaode matrix, the method for metallising of the back surface of described P-type crystal silicon solaode matrix, for using silver slurry printed back primary gate electrode and drying, then uses aluminium paste printed back aluminum electrode and dries。
Wherein, crystal silicon solar energy battery is carried out method for metallising before further comprising the steps of:
S1P, selection P-type crystal silicon solaode matrix, and making herbs into wool process is done on the surface of P-type crystal silicon solaode matrix；The resistivity of P-type crystal silicon solaode matrix is 0.5～15 Ω cm；
S2P, step S1P is processed after P-type crystal silicon solaode matrix put into industrial diffusion furnace carry out phosphorus diffusion, phosphorus source adopts phosphorus oxychloride, and diffusion temperature is 800-900 DEG C, and the time is 60-120 minute；Sheet resistance value after phosphorus diffusion is 50-150 Ω/sqr；
S3P, phosphorus is spread after P-type crystal silicon solaode matrix put in etching cleaning machine, remove the phosphorosilicate glass layer in the phosphorus-diffused layer at the back side and front；
S4P, by step S3P process after P-type crystal silicon solaode matrix put in PECVD (plasma enhanced chemical vapor deposition) equipment, plate silicon nitride layer at front surface。
Wherein, described crystal silicon solar energy battery matrix is N-type crystalline silicon solaode matrix, and the method for metallising of described N-type crystalline silicon solaode matrix back surface is for using silver slurry print electrode and dry at back surface。
Wherein, crystal silicon solar energy battery is carried out method for metallising before further comprising the steps of:
S1N, selection N-type crystalline silicon solaode matrix, and the front surface of N-type crystalline silicon solaode matrix is done making herbs into wool process；The resistivity of N-type crystalline silicon solaode matrix is 0.5～15 Ω cm；
S2N, step S1N is processed after N-type crystalline silicon solaode matrix put in industrial diffusion furnace making herbs into wool face carried out boron diffusion, boron source adopts Boron tribromide, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minute；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
S3N, boron is spread after silicon substrate put in etching cleaning machine, remove the Pyrex layer in the diffused layer of boron at the back side and front；
S4N, the use ion implantation apparatus N-type crystalline silicon solaode matrix back side after step S3N processes are injected phosphorus atoms and make annealing treatment；The peak temperature of annealing is 700～950 DEG C, and annealing time is 30～200min, and environment source of the gas is N2 and O2；
S5N, by step S4N process after N-type crystalline silicon solaode matrix put in cleaning machine, remove front and back oxide layer；
S6N, by step S5N process after N-type crystalline silicon solaode matrix put in PECVD device, all plate silicon nitride layer at front and back。
Present invention also offers a kind of crystal silicon solar energy battery, including crystal silicon solar energy battery matrix, the electrode of the front surface of described crystal silicon solar energy battery matrix includes main grid, segmentation pair grid and conductor wire, and described segmentation pair grid, main grid are connected with described conductor wire。
Wherein, described conductor wire is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines。
Wherein, the shape of described segmentation pair grid is discrete round dot or discrete lines。
Present invention also offers a kind of crystal silicon solar battery component, including front layer material from top to bottom, encapsulating material, crystal silicon solar energy battery, encapsulating material, backsheet, described crystal silicon solar energy battery is above-mentioned a kind of crystal silicon solar energy battery。
Present invention also offers a kind of crystal silicon solar energy battery system, including the crystal silicon solar battery component of one or more than one series connection, crystal silicon solar battery component is above-mentioned a kind of crystal silicon solar battery component。
The enforcement of the present invention includes techniques below effect:
The technological merit of the present invention is mainly reflected in: adopts conductor wire to replace partial silver slurry and forms secondary grid, has not only reduced the surface recombination that argentiferous pair grid bring but also the production cost decreasing metallization operation。Compare existing front metal metallization processes, the present invention can save general 40-60% containing silver paste consumption。It addition, solaode and the made battery of prior art made by the present invention do not have notable difference in appearance, doing any change when cell package becomes assembly without to welding procedure and equipment, versatility is good。
Accompanying drawing explanation
Fig. 1 is a kind of front surface of the embodiment of the present invention is the crystal silicon solar energy battery schematic diagram (before printing thermal conductive layer) of round point shape segmentation pair grid。
Fig. 2 is a kind of front surface of the embodiment of the present invention is the crystal silicon solar energy battery schematic diagram (conductor wire and segmentation pair grid form Ohmic contact after) of round point shape segmentation pair grid。
Fig. 3 is a kind of front surface of the embodiment of the present invention is the solaode schematic diagram (before printing thermal conductive layer) of x wire strip-like pieces pair grid。
Fig. 4 is the solaode schematic diagram (before printing thermal conductive layer) of the round point shape segmentation pair grid that a kind of front surface is Heterogeneous Permutation of the embodiment of the present invention
Fig. 5 is a kind of front surface of the embodiment of the present invention is the solaode schematic diagram (before printing thermal conductive layer) of vertical linear segmentation pair grid
1, crystal silicon solar energy battery matrix；2, round point shape segmentation pair grid；3, main grid；4, linear segmentation pair grid；5, conductor wire。
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described embodiment is intended merely to facilitate the understanding of the present invention, and it does not play any restriction effect。
Referring to shown in Fig. 1 to Fig. 3, a kind of method for metallising of crystal silicon solar energy battery, comprise the following steps: the electrode of crystal silicon solar energy battery matrix 1 back surface is prepared in printing, front surface at crystal silicon solar energy battery matrix 1 uses silver slurry or mixes aluminum paste printing main grid 3 and segmentation pair grid, and the shape of segmentation pair grid can be discrete round dot (shown in Fig. 1) or discrete lines (shown in Fig. 3)。Discrete round dot Heterogeneous Permutation as it is shown in figure 1, the discrete round dot in adjacent sectional pair grid can be well-regulated array, it is also possible to as shown in Figure 4, in adjacent sectional pair grid。As it is shown on figure 3, the discrete lines in adjacent sectional pair grid can be horizontal well-regulated array, it is also possible to as it is shown in figure 5, the discrete lines in adjacent sectional pair grid are longitudinal well-regulated arrays。Tensioning equipment is used to lay conductor wire 5 on segmentation pair grid, in the present embodiment, conductor wire 5 is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines, afterwards the crystal silicon solar energy battery matrix 1 laying conductor wire 5 is sent in sintering furnace and be sintered, the peak temperature of sintering is 850～950 DEG C, conductor wire 5 after sintering forms Ohmic contact with segmentation pair grid and main grid 3, completes the making of crystal silicon solar energy battery。
Crystal silicon solar energy battery matrix 1 can be N-type crystalline silicon solaode matrix or P-type crystal silicon solaode matrix。Following being described in detail with three specific embodiments, wherein embodiment 1 is the embodiment of the round point shape segmentation pair grid 2 of P-type crystal silicon solaode matrix。Embodiment 2 is the embodiment of the linear segmentation pair grid 4 of P-type crystal silicon solaode matrix。Embodiment 3 is the embodiment of the linear segmentation pair grid 4 of N-type crystalline silicon solaode matrix。In order to more clearly show the preparation technology of crystal silicon solar energy battery, following embodiment crystal silicon solar energy battery is carried out method for metallising before step be also described in detail。
Embodiment 1
(1), selecting solaode matrix, the present embodiment selects the P-type crystal silicon matrix of 156mm*156mm, and the surface of P-type crystal silicon matrix is done making herbs into wool process；The resistivity of P-type crystal silicon matrix is 0.5～15 Ω cm, it is preferable that 1～5 Ω cm, and its thickness is 50～300 μm, it is preferable that 80～200 μm；
(2), by the P-type crystal silicon matrix after step (1) process putting into and carry out phosphorus diffusion in industrial diffusion furnace, phosphorus source adopts phosphorus oxychloride, and diffusion temperature is 800-900 DEG C, and the time is 60-120 minute。Sheet resistance value after phosphorus diffusion is 50-150 Ω/sqr, it is preferable that 70-90 Ω/sqr。
(3), the P-type crystal silicon matrix after phosphorus diffusion is put in etching cleaning machine, remove the phosphorus-diffused layer at the back side and the phosphorosilicate glass layer in front。
(4), putting in PECVD device by the P-type crystal silicon matrix after step (3) process, plate silicon nitride layer at front surface, the thickness of silicon nitride layer is 65-80nm, and refractive index is 2.05-2.15。
(5), use silver slurry printing back electrode at back surface and dry。
(6), use aluminium paste printed back aluminum electrode at back surface and dry。
(7), silver slurry printing main grid and segmentation pair grid are used at front surface。Main grid and segmentation pair grid complete in one-step print。Wherein main grid width 0.5-2mm, the present embodiment is 1mm。The length of main grid is less than or equal to the length of side of cell piece, and the present embodiment is 154mm, it is possible to spaced set 3 or 4。Segmentation pair grid arrange 80, and length is less than or equal to the length of side of cell piece, and the present embodiment is 154mm, it is preferable that segmentation pair grid are parallel to each other, and the spacing of segmentation pair grid parallel to each other is 1.95mm。In the present embodiment, every segmentation pair grid are made up of discrete round dot, and round dot diameter is 30-300 micron。Point-blank, and the straight line being formed by connecting by the center of circle is perpendicular to main grid in the center of circle of these round dots。
(8), on segmentation pair grid, lay conductor wire and form continuous print pair grid line。Conductor wire arranges 80 altogether, parallel to each other, and spacing is 1.95mm。Conductor wire is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines, and length is 154mm, and diameter is 40-80 micron。Conductor wire must be made during laying to contact the silver slurry layer on every segmentation pair grid。
(9), step (8) is processed after P-type crystal silicon matrix transmission enter belt sintering stove and be sintered, sintering peak temperature is 850-950 DEG C, namely completes the making of P-type crystal silicon battery。
The made battery of the present embodiment and the made battery of prior art do not have notable difference in appearance, do any change when cell package becomes assembly without to welding procedure and equipment。
Embodiment 2
(1), selecting solaode matrix, the present embodiment selects the P-type crystal silicon matrix of 156mm*156mm, and the surface of P-type crystal silicon matrix is done making herbs into wool process；The resistivity of P-type crystal silicon matrix is 0.5～15 Ω cm, it is preferable that 1～5 Ω cm, and its thickness is 50～300 μm, it is preferable that 80～200 μm；
(2), by the P-type crystal silicon matrix after step (1) process putting into and carry out phosphorus diffusion in industrial diffusion furnace, phosphorus source adopts phosphorus oxychloride, and diffusion temperature is 800-900 DEG C, and the time is 60-120 minute。Sheet resistance value after phosphorus diffusion is 50-150 Ω/sqr, it is preferable that 70-90 Ω/sqr。
(3), the P-type crystal silicon matrix after phosphorus diffusion is put in etching cleaning machine, remove the phosphorus-diffused layer at the back side and the phosphorosilicate glass layer in front。
(4), putting in PECVD device by the P-type crystal silicon matrix after step (3) process, plate silicon nitride layer at front surface, the thickness of silicon nitride layer is 65-80nm, and refractive index is 2.05-2.15。
(5), use silver slurry printing back electrode at back surface and dry。
(6), use aluminium paste printed back aluminum electrode at back surface and dry。
(7), silver slurry printing main grid and segmentation pair grid are used at front surface。Main grid and segmentation pair grid complete in one-step print。Wherein main grid width 0.5-2mm, the present embodiment is 1mm。The length of main grid is less than or equal to the length of side of cell piece, and the present embodiment is 154mm, it is possible to spaced set 3 or 4。Segmentation pair grid arrange 100, and length is less than or equal to the length of side of cell piece, and the present embodiment is 154mm, it is preferable that segmentation pair grid are parallel to each other, and spacing is 1.55mm。In the present embodiment, every segmentation pair grid are made up of discrete lines, every section of long 30-300 micron of lines, wide 30-300 micron。
(8), on segmentation pair grid, lay conductor wire and form continuous print pair grid line。Conductor wire arranges 100 altogether, parallel to each other, and spacing is 1.55mm。Conductor wire is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines, and length is 154mm, and diameter is 40-80 micron。Conductor wire must be made during laying to contact the silver slurry layer on every segmentation pair grid。
(9), step (8) is processed after P-type crystal silicon matrix transmission enter belt sintering stove and be sintered, sintering peak temperature is 850-950 DEG C, namely completes the making of P-type crystal silicon battery。
The made battery of the present embodiment and the made battery of prior art do not have notable difference in appearance, do any change when cell package becomes assembly without to welding procedure and equipment。
Embodiment 3
(1), selecting solaode matrix, the present embodiment selects the N-type crystalline silicon matrix of 156mm*156mm, and the front surface of N-type crystalline silicon matrix is done making herbs into wool process；The resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm, it is preferable that 1～5 Ω cm；The thickness of N-type crystalline silicon matrix is 50～300 μm, it is preferable that 80～200 μm；
(2), by the N-type crystalline silicon matrix after step (1) process putting in industrial diffusion furnace and making herbs into wool face is carried out boron diffusion, boron source adopts Boron tribromide, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minute。Sheet resistance value after boron diffusion is 40-100 Ω/sqr, it is preferable that 50-70 Ω/sqr。
(3), the silicon substrate after boron diffusion is put in etching cleaning machine, remove the diffused layer of boron at the back side and the Pyrex layer in front。
(4) ion implantation apparatus N-type crystalline silicon matrix back side after step (3) processes, is used to inject phosphorus atoms and make annealing treatment。The peak temperature of annealing is 700～950 DEG C, it is preferred to 850～900 DEG C, annealing time is 30～200min, it is preferred to 60～200min, and environment source of the gas is preferably N2And O2。
(5), the N-type crystalline silicon matrix after step (4) process is put in cleaning machine, remove the oxide layer of front and back。
(6) the N-type crystalline silicon matrix after, step (5) being processed is put in PECVD device, silicon nitride layer is all plated at front and back, the thickness of front side silicon nitride silicon layer is 65-80nm, refractive index is 2.05-2.15, the thickness of back side silicon nitride silicon layer is 40-70nm, and refractive index is 2.15-2.25。
(7), using silver slurry print electrode and dry at back surface, its electrode pattern is H type grid line, wherein main grid width 1mm, long 154mm, spaced set 4；Secondary grid line live width 40um, long 154mm, parallel to each other, spacing is 1.55mm, arranges 100 altogether。
(8), aluminum paste printing main grid and segmentation pair grid are mixed in front surface use。Main grid and segmentation pair grid complete in one-step print。Wherein main grid width 0.5-2mm, the present embodiment is 1mm。The length of main grid is less than or equal to the length of side of cell piece, and the present embodiment is 154mm。Can spaced set 3 or 4, the present embodiment is 4。Segmentation pair grid arrange 100, and length is less than or equal to the length of side of cell piece, and the present embodiment is 154mm, it is preferable that segmentation pair grid are parallel to each other, and spacing is 1.55mm。In the present embodiment, every segmentation pair grid are made up of discrete lines, every section of long 30-300 micron of lines, wide 30-300 micron。
(9), on segmentation pair grid, lay copper cash and form continuous print pair grid line。Conductor wire arranges 100 altogether, parallel to each other, and spacing is 1.55mm。Conductor wire is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines, and length is 154mm, and diameter is 40-80 micron。Conductor wire must be made during laying to contact the silver slurry layer on every segmentation pair grid。
(10), step (9) is processed after N-type crystalline silicon matrix transmission enter belt sintering stove and be sintered, the peak temperature of sintering is 850-950 DEG C, namely completes the making of N-type crystalline silicon battery。
The made battery of the present embodiment and the made battery of prior art do not have notable difference in appearance, do any change when cell package becomes assembly without to welding procedure and equipment。
Referring to shown in Fig. 1 to Fig. 3, present invention also offers a kind of crystal silicon solar energy battery, including crystal silicon solar energy battery matrix 1, the electrode of the front surface of described crystal silicon solar energy battery matrix 1 includes main grid 3, segmentation pair grid and conductor wire 5, and in the present embodiment, conductor wire 5 is copper cash, aluminum steel, silver copper-clad or other alloy conductive lines。The shape of segmentation pair grid can be discrete round dot (shown in Fig. 1) or discrete lines (shown in Fig. 3)；Described segmentation pair grid and main grid are connected with described conductor wire 5。Adopt conductor wire to replace partial silver slurry and form secondary grid, not only reduce the surface recombination that argentiferous pair grid bring but also the production cost decreasing metallization operation。Compare existing front metal metallization processes, the present invention can save general 40-60% containing silver paste consumption。It addition, solaode and the made battery of prior art made by the present invention do not have notable difference in appearance, doing any change when cell package becomes assembly without to welding procedure and equipment, versatility is good。
The present embodiment additionally provides a kind of crystal silicon solar battery component, including the front layer material being from top to bottom sequentially connected with, encapsulating material, crystal silicon solar energy battery, encapsulating material, backsheet, crystal silicon solar energy battery is above-mentioned a kind of crystal silicon solar energy battery。The structure and working principle of the crystal silicon solar battery component of the present embodiment uses technology well known in the art, and the improvement of crystal silicon solar battery component provided by the invention only relates to above-mentioned crystal silicon solar energy battery, other parts is not modified。Therefore crystal silicon solar energy battery and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to crystal silicon solar battery component repeat no more here。Those skilled in the art, in the content basis that this specification describes, can realize the crystal silicon solar battery component of the present invention。
The present embodiment additionally provides a kind of crystal silicon solar energy battery system, and including the crystal silicon solar battery component of one or more than one series connection, crystal silicon solar battery component is above-mentioned a kind of crystal silicon solar battery component。The structure and working principle of the crystal silicon solar energy battery system of the present embodiment uses technology well known in the art, and the improvement of crystal silicon solar energy battery system provided by the invention only relates to above-mentioned crystal silicon solar energy battery, other parts is not modified。Therefore crystal silicon solar energy battery and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to crystal silicon solar energy battery system repeat no more here。Those skilled in the art, in the content basis that this specification describes, can realize the crystal silicon solar energy battery system of the present invention。
Finally should be noted that; above example is only in order to illustrate technical scheme; but not limiting the scope of the invention; although having made to explain to the present invention with reference to preferred embodiment; it will be understood by those within the art that; technical scheme can be modified or equivalent replacement, without deviating from the spirit and scope of technical solution of the present invention。
Claims (13)
1. the method for metallising of a crystal silicon solar energy battery, it is characterized in that: comprise the following steps: the electrode of crystal silicon solar energy battery matrix back surface is prepared in printing, the front surface at crystal silicon solar energy battery matrix uses silver slurry or mixes aluminum paste printing main grid and segmentation pair grid；Segmentation pair grid are laid conductor wire, afterwards the crystal silicon solar energy battery matrix laying conductor wire is sintered, after sintering, segmentation pair grid and front surface emitter stage form Ohmic contact, and conductor wire forms Ohmic contact with segmentation pair grid and main grid, completes the making of crystal silicon solar energy battery。
2. the method for metallising of a kind of crystal silicon solar energy battery according to claim 1, it is characterised in that: described conductor wire is copper cash, aluminum steel or silver copper-clad line；The peak temperature of sintering is 850～950 DEG C。
3. the method for metallising of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: the shape of described segmentation pair grid is discrete round dot, the diameter of described discrete round dot is 30-300 micron, and the diameter of described conductor wire is 40-80 micron。
4. the method for metallising of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: the shape of described segmentation pair grid is discrete lines, the length of described discrete lines is 40-300 micron, the width of described discontinuous lines is 40-300 micron, and the diameter of described conductor wire is 40-80 micron；Discrete lines are perpendicular to main grid, parallel main grid or have angle with main grid。
5. the method for metallising according to the arbitrary described a kind of crystal silicon solar energy battery of Claims 1 to 4, it is characterized in that: described crystal silicon solar energy battery matrix is P-type crystal silicon solaode matrix, the method for metallising of the back surface of described P-type crystal silicon solaode matrix, for using silver slurry printed back main grid and drying, then uses aluminium paste printed back aluminum electrode and dries。
6. the method for metallising of a kind of crystal silicon solar energy battery according to claim 5, it is characterised in that: further comprising the steps of before crystal silicon solar energy battery is carried out method for metallising:
S1P, selection P-type crystal silicon solaode matrix, and making herbs into wool process is done on the surface of P-type crystal silicon solaode matrix；The resistivity of P-type crystal silicon solaode matrix is 0.5～15 Ω cm；
S2P, step S1P is processed after P-type crystal silicon solaode matrix put into industrial diffusion furnace carry out phosphorus diffusion, phosphorus source adopts phosphorus oxychloride, and diffusion temperature is 800-900 DEG C, and the time is 60-120 minute；Sheet resistance value after phosphorus diffusion is 50-150 Ω/sqr；
S3P, phosphorus is spread after P-type crystal silicon solaode matrix put in etching cleaning machine, remove the phosphorosilicate glass layer in the phosphorus-diffused layer at the back side and front；
S4P, by step S3P process after P-type crystal silicon solaode matrix put in PECVD device, plate silicon nitride layer at front surface。
7. the method for metallising according to the arbitrary described a kind of crystal silicon solar energy battery of Claims 1 to 4, it is characterized in that: described crystal silicon solar energy battery matrix is N-type crystalline silicon solaode matrix, the method for metallising of described N-type crystalline silicon solaode matrix back surface is for using silver slurry print electrode and dry at back surface。
8. the method for metallising of a kind of crystal silicon solar energy battery according to claim 7, it is characterised in that: further comprising the steps of before crystal silicon solar energy battery is carried out method for metallising:
S1N, selection N-type crystalline silicon solaode matrix, and the front surface of N-type crystalline silicon solaode matrix is done making herbs into wool process；The resistivity of N-type crystalline silicon solaode matrix is 0.5～15 Ω cm；
S2N, step S1N is processed after N-type crystalline silicon solaode matrix put in industrial diffusion furnace making herbs into wool face carried out boron diffusion, boron source adopts Boron tribromide, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minute；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
S3N, boron is spread after silicon substrate put in etching cleaning machine, remove the Pyrex layer in the diffused layer of boron at the back side and front；
S4N, the use ion implantation apparatus N-type crystalline silicon solaode matrix back side after step S3N processes are injected phosphorus atoms and make annealing treatment；The peak temperature of annealing is 700～950 DEG C, and annealing time is 30～200min, and environment source of the gas is N2And O2；
S5N, by step S4N process after N-type crystalline silicon solaode matrix put in cleaning machine, remove front and back oxide layer；
S6N, by step S5N process after N-type crystalline silicon solaode matrix put in PECVD device, all plate silicon nitride layer at front and back。
9. a crystal silicon solar energy battery, it is characterized in that: include crystal silicon solar energy battery matrix, the electrode of the front surface of described crystal silicon solar energy battery matrix includes main grid, segmentation pair grid and conductor wire, and described segmentation pair grid and main grid are all connected with described conductor wire。
10. a kind of crystal silicon solar energy battery according to claim 9, it is characterised in that: described conductor wire is copper cash, aluminum steel or silver copper-clad line。
11. a kind of crystal silicon solar energy battery according to claim 9, it is characterised in that: the shape of described segmentation pair grid is discrete round dot or discrete lines。
12. a crystal silicon solar battery component, including the front layer material being from top to bottom sequentially connected with, encapsulating material, crystal silicon solar energy battery, encapsulating material, backsheet, it is characterised in that: described crystal silicon solar energy battery is the arbitrary described a kind of crystal silicon solar energy battery of claim 9-11。
13. a crystal silicon solar energy battery system, including the crystal silicon solar battery component of one or more than one series connection, it is characterised in that: described crystal silicon solar battery component is a kind of crystal silicon solar battery component described in claim 12。
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