CN105699441A - Resistance-type gas sensor and manufacturing method thereof - Google Patents
Resistance-type gas sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN105699441A CN105699441A CN201610172151.4A CN201610172151A CN105699441A CN 105699441 A CN105699441 A CN 105699441A CN 201610172151 A CN201610172151 A CN 201610172151A CN 105699441 A CN105699441 A CN 105699441A
- Authority
- CN
- China
- Prior art keywords
- gas
- interdigital electrode
- resistance
- gas sensor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Abstract
The invention provides a resistance-type gas sensor and a manufacturing method thereof, and belongs to the technical field of gas sensors. The resistance-type gas sensor comprises an insulating substrate, an interdigital electrode and a gas-sensitive layer, wherein the gas-sensitive layer is partitioned into two bilaterally-symmetrical regions on the surface of the insulating substrate by taking the center line of the interdigital electrode as a symmetrical axis; gas-sensitive films having different responses to the same certain gas are deposited in the regions respectively. The manufacturing method comprises the following steps: firstly, preparing an insulating layer; secondly, performing photoetching on the insulating layer to form an interdigital electrode negative pattern, and depositing a proper interdigital electrode; partitioning the interdigital electrode into two symmetrical regions by taking the center line of the interdigital electrode as the symmetrical axis; lastly, depositing the gas-sensitive films having different responses to the same certain gas in the regions to obtain the resistance-type gas sensor. The manufacturing method is low in production cost, and is simple in process; the selectivity of the specific gas is enhanced; meanwhile, the influence of baseline drift on gas detection can be improved, and the stability and the measuring accuracy of the gas sensor are improved.
Description
Technical field
The present invention relates to gas sensor technical field, be specifically related to a kind of resistance-type gas sensor and preparation method thereof。
Background technology
Gas sensor is the core of gas detecting system, is a kind of device that certain gas volume fraction changes into the corresponding signal of telecommunication。Producing surface adsorption or reaction when gas sensor is dependent on interacting with gas, causing the change of sensor conductance rate, sole mass or other characteristics, thus detecting the concentration of tested gas。Wherein, Gas Sensors of Electric Resistance Semiconductors is a kind of type conventional in gas sensor, is widely used in multiple fields such as industry, chemical industry, electronics, electric power, lathe, oil。
The resistance variations caused when resistor-type gas sensor is by gas absorption and reaction carrys out detected gas。In resistance-type gas sensor, sensitive membrane material is particularly important, in gas sensor, owing to multiple gases is all had a degree of response by sensitive membrane of the same race, is only difficult to the efficient identification to heterogeneity gas and Concentration Testing by single sensitive membrane。
In improving gas-selectively, common method is to take composite membrane, multilayer film and three kinds of modes of multilayer complex films both at home and abroad at present。Composite membrane is to be mixed according to special ratios by multiple gas sensitive, is then coated with in device surface film forming；Multilayer film is according to a definite sequence by multiple gas sensitive, is successively coated on device surface film forming；Multilayer complex films is then according to a definite sequence by the gas sensitive of compound, is successively coated on device surface film forming。This several modes has its advantage, but there is also its shortcoming: the gas sensitive of composite membrane mixes, and gas-sensitive property is it may happen that change, and response results is preset in deviation；The internal layer membrane of multilayer film is likely to not easily contact gas molecule, reduces responsiveness and selectivity, and multilayer film is easily caused desorption not exclusively, causes baseline drift；Requiring higher in formulation selection and processing technique to reach higher response and good selectivity, composite membrane and multilayer film, flow process is complicated, and processing difficulties degree is big。Therefore it provides a kind of simple possible, novel gas sensor sensitive thin film structure and preparation method solve conventional composite, multi-layer sensitive film Problems existing, and then the performance improving gas sensor is very necessary。
Summary of the invention
It is an object of the invention to, it is provided that a kind of resistance-type gas sensor and preparation method thereof；The shortcoming of the baseline drift that the present invention can solve that the resistance sensor gas sensitive selectivity based on sensitive membrane gas absorption is not good and conventional composite, multi-layer sensitive thin film desorption not exclusively cause, strengthens the selectivity of gas sensor detection, stability and certainty of measurement。
Technical scheme is as follows:
A kind of resistance-type gas sensor, it is characterised in that the interdigital electrode include dielectric substrate, being positioned in dielectric substrate and the gas-sensitive film layer being deposited in interdigital electrode；Described gas-sensitive film layer is divided into two symmetrical subregions with the symmetrical axis of interdigital electrode for axis of symmetry at device surface, and each subregion deposits the gas-sensitive film layer that same specific gas has different responses respectively。
Wherein, described interdigital electrode material is gold or aluminum, and interdigital electrode logarithm is 10～15 pairs, refers to that spacing is 10～100 μm。
The preparation method of a kind of resistance-type gas sensor, comprises the following steps:
Step 1: substrate is carried out and pretreatment, grows one layer of uniform silicon dioxide insulating layer by thermal oxidation method at substrate surface；
Step 2: being lithographically formed interdigital electrode logarithm on silicon dioxide insulating layer is 10～15 pairs, refers to the interdigital electrode negative patterning that spacing is 10～100 μm；
Step 3: sputtering forms nickel-chrome alloy layer on the interdigital electrode negative patterning of step 2 gained, then at nicr layer plated surface layer gold or aluminium lamination, finally removes unnecessary layer gold or aluminium lamination, obtain interdigital electrode；
Step 4: forming two symmetrical subregions with the symmetrical axis of interdigital electrode for axis of symmetry at device surface, described each subregion is the gas-sensitive film layer that same specific gas has different responses, thus preparing resistance-type gas sensor。
In described step 1, adhesion on being grown on thin film thereon of the cleaning of substrate and pretreatment and subsequent process flow impact are very big, therefore need substrate to clean up in step 1。Being typically chosen glass substrate, conventional cleaning method can soak in the mixed solution of concentrated sulphuric acid and hydrogen peroxide, removes the organic pollution being attached in glass substrate；Then place into and the alkaline solutions such as ammonia, hydrochloric acid solution, acetone soln, alcoholic solution carry out ultrasonic cleaning respectively, remove metal ion pollution and particle contamination；Finally blow away substrate surface moisture with the nitrogen of dried and clean, fully dry in drying baker；
Described step 2 adopts Ultraviolet lithography, first with sol evenning machine at one layer of uniform photoresist of surface of insulating layer spin coating, using positive mask plate to expose on deep UV lithography machine, then in developer solution, development obtains mask graph, is lithographically formed suitable interdigital electrode negative patterning；
In described step 3, sputtering thickness by the method for magnetron sputtering on the interdigital electrode negative patterning that photoetching is good is that the nickel-chrome alloy layer of 5～10nm is to improve the tack of device surface, and at layer gold or aluminium lamination that nicr layer surface employing vacuum vapour deposition evaporation thickness is 50～100nm, heat treatment can be carried out afterwards to strengthen the adhesion of nicr layer and layer gold or aluminium lamination, by photoresist part and it is attached to the layer gold on photoetching offset plate figure or aluminium lamination removal finally by stripping means, obtains required gold or aluminum interdigital electrode；
In described step 4, the gas-sensitive film layer of each subregion can use any suitable film growth techniques, generally can spray different sensitive materials by mask baffle plate gas blowout method, and spraying is carried out vacuum drying after terminating, film-forming, prepares partition conbination resistance-type gas sensor。
When the different gas sensitives of each subregion of the present invention touch specific gas of the same race simultaneously, every kind of material can produce the change of response after adsorbing gas to be measured, swelling effect or the electron hole based on electron hole exchange theory is occurred to change, the superimposed meeting of response change of each subregion gas results in the comprehensive response to specific gas, thus causing the sensor raising to gas-selectively。
In addition, gas sensitive material is in test environment, owing to passing into the time restriction of carrier gas, inevitably there is a degree of baseline drift, different baselines in carrier gas environment can be selected upwards to drift about respectively and the sensitive material of downward drift carries out error compensation, the error that baseline drift causes can be compensated so that the certainty of measurement of sensor is greatly improved。
Compared to prior art, the method have the advantages that
1. same specific gas is had the gas sensitive of different response by the present invention in two the symmetrical zone coated being axis of symmetry with the center line of interdigital electrode, obtains the comprehensive response of specific gas, improve the selectivity to specific gas after making gas sensitive combination of effects superposition。
2. the present invention can avoid the baseline drift problem that traditional sensors composite sensitive film and multi-layer sensitive film desorption not exclusively cause, the present invention adopts same specific gas to have the gas sensitive partition conbination of different response, mutually compensate for, inhibit the baseline drift impact on gas detecting, improve stability and the certainty of measurement of gas sensor。
3., compared to the shortcoming of composite membrane, multilayer film complicated process of preparation, the present invention provides sensor construction simple, and production cost is low, adopts traditional micro-processing technology just can realize。
4. resistance-type gas sensor structure provided by the invention, is different from the traditional method of composite membrane, multilayer film, and the research for gas sensor has started new approach with application。
Therefore, resistance-type gas sensor structure provided by the invention has boundless application prospect。
Accompanying drawing explanation
Fig. 1 is the structural representation of one embodiment of the present of invention。
Fig. 2 is structure and the test schematic diagram of an example of the present invention。
Fig. 3 is that single gas sensitive resistance-type gas sensor is to NH3The resistance real-time response curve chart of gas；Wherein, (a) is SnO2Gas sensitive resistance-type ammonia gas sensor is for variable concentrations NH3Response curve, (b) for CuCl gas sensitive resistance-type ammonia gas sensor for variable concentrations NH3Response curve, (c) is SnO2Gas sensitive resistance-type ammonia gas sensor is for same concentrations NH3Repeated curve, (d) for CuCl gas sensitive resistance-type ammonia gas sensor for same concentrations NH3Repeated curve。
Fig. 4 is that composite air-sensitive material resistance formula gas sensor is to NH3The resistance real-time response curve chart of gas；Wherein, (e) for composite air-sensitive material resistance formula ammonia gas sensor for variable concentrations NH3Response curve, (f) for composite air-sensitive material resistance formula ammonia gas sensor for same concentrations NH3Repeated curve。
Fig. 5 is that the resistance-type ammonia gas sensor of the present invention is to NH3The resistance real-time response curve chart of gas；Wherein, (g) for resistance-type ammonia gas sensor of the present invention for variable concentrations NH3Response curve, (h) for resistance-type ammonia gas sensor of the present invention for same concentrations NH3Repeated curve。
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described:
As it is shown in figure 1, a kind of resistance-type gas sensor, it is characterised in that the interdigital electrode include dielectric substrate, being positioned in dielectric substrate and the gas-sensitive film layer being deposited in interdigital electrode；Described gas-sensitive film layer is divided into two symmetrical region As for axis of symmetry at device surface with the symmetrical axis of interdigital electrode and deposits, with region B, region A and region B, the gas-sensitive film layer that same specific gas has different response respectively。
Embodiment:
The resistance-type ammonia gas sensor of the preparation present invention, comprises the following steps:
Step 1: selection monocrystal silicon is substrate, is carried out substrate and pretreatment, grows one layer of uniform silicon dioxide insulating layer by thermal oxidation method at substrate surface；
Step 2: with the negative photoresist of sol evenning machine spin coating on silica surface, use positive mask plate expose on deep UV lithography machine, then develops in developer solution and obtains mask graph, is lithographically formed the golden interdigital electrode negative patterning that the 10 pairs of spacing are 50 μm；
Step 3: sputtering thickness with magnetron sputtering method on the golden interdigital electrode negative patterning of step 2 gained is the nickel-chrome alloy layer of 10nm, adopting vacuum vapour deposition evaporation thickness again on nicr layer surface is the layer gold of 85nm, by photoresist part and it is attached to the layer gold removal on photoetching offset plate figure finally by the method peeled off, obtains gold interdigital electrode；
Step 4: form two symmetrical subregions at device surface with the symmetrical axis of interdigital electrode for axis of symmetry, sprays RGO and the SnO that 0.5ml concentration is 10wt% respectively by mask baffle plate gas blowout method in a region2The sensitive material of compound, spraying the sensitive material of RGO and the CuCl compound that 0.5ml concentration is 10wt% in another region, spraying is carried out vacuum drying, film-forming, prepared resistance-type ammonia gas sensor of the present invention after terminating。
Preparation contrast experiment organizes desired gas sensor, these three interdigital electrode is made gas sensor and verifies the effect of the present invention as a comparison。:
Make RGO and the SnO that spraying 1ml concentration is 10wt%2Composite solution is as the resistance-type gas sensor of single gas sensitive, and spraying 1ml concentration is 10wt%RGO and the CuCl composite solution resistance-type gas sensor as gas sensitization layer,
Make the SnO of spraying 1ml2With the CuCl composite solution resistance-type gas sensor as composite air-sensitive material, described composite air-sensitive material is the RGO/SnO of 10wt% by 1ml concentration2Solution and 1ml concentration are that 10wt%RGO/CuCl solution mixing system is standby。
As in figure 2 it is shown, above-mentioned four kinds of gas sensors are put into test box, after passing into nitrogen 8 hours, each lead into the NH that concentration is 20ppm, 40ppm, 60ppm, 80ppm, 100ppm3, the time that every time passes into is 15 minutes, and is passing into variable concentrations NH3After again pass into the pure nitrogen gas of 15 minutes and recover。
As it is shown on figure 3, adopt the SnO that tradition is single2The resistance-type gas sensor of sensitive material and the resistance-type gas sensor of single CuCl sensitive material are to 0～100ppmNH3When testing, SnO2Material sensors initial resistance under pure nitrogen gas environment is about 4500 Ω, at the NH passing into 20～100ppm concentration in succession3After pass into pure nitrogen gas again when recovering, the resistance of sensor cannot return to initial resistance, and entirety presents the trend of obvious downward drift, has dropped to about 3870 Ω to resistance when terminating to survey；Equally, the resistance that recovers of the resistance sensor that single CuCl sensitive material is made presents the trend significantly upwards drifted about, and the sensor that both pure gas sensitive materials are made simultaneously is to NH3Responsiveness all less。
As shown in Figure 4, traditional mode is adopted directly to be mixed by bi-material, by SnO2Although the resistance-type gas sensor prepared with the sensitive material of CuCl compound increases in responsiveness, but still the problem with the baseline identical with the resistance-type gas sensor that single CuCl material is made seriously upper drift。
Have employed the sensor of present configuration as it is shown in figure 5, not only show NH3Bigger responsiveness, and all substantially can return to initial resistance often taking turns resistance in recovery, the phenomenon of baseline drift obtains good improvement, and shows good repeatability in the replica test carried out under 60ppm。
In sum, shown in Fig. 3-Fig. 5: the resistance-type ammonia gas sensor of the present invention is to variable concentrations NH3Selectivity improve, baseline drift phenomenon significantly reduces, and repeated experiment shows that good stability, overall each side are better than the gas sensor of single gas sensitive and the gas sensor of composite air-sensitive material。
Described above it is only presently preferred embodiments of the present invention; the present invention is not limited to enumerate above-described embodiment; should be noted that; any those of ordinary skill in the art are under the guidance of this specification; done used equivalent replacement, obvious variant; all fall within the essential scope of this specification, the protection of the present invention ought to be subject to。
Claims (5)
1. a resistance-type gas sensor, it is characterised in that the interdigital electrode include dielectric substrate, being positioned in dielectric substrate and the gas-sensitive film layer being deposited in interdigital electrode；Described gas-sensitive film layer is divided into two symmetrical subregions with the symmetrical axis of interdigital electrode for axis of symmetry at device surface, and each subregion deposits the gas-sensitive film layer that same specific gas has different responses respectively。
2. resistance-type gas sensor according to claim 1, it is characterised in that described interdigital electrode material is gold or aluminum。
3. resistance-type gas sensor according to claim 2, it is characterised in that described interdigital electrode logarithm is 10～15 pairs, refers to that spacing is 10～100 μm。
4. the preparation method of a resistance-type gas sensor, it is characterised in that comprise the following steps:
Step 1: substrate is carried out and pretreatment, grows one layer of uniform silicon dioxide insulating layer by thermal oxidation method at substrate surface；
Step 2: being lithographically formed interdigital electrode logarithm on silicon dioxide insulating layer is 10～15 pairs, refers to the interdigital electrode negative patterning that spacing is 10～100 μm；
Step 3: sputtering forms nickel-chrome alloy layer on the interdigital electrode negative patterning of step 2 gained, then at nicr layer plated surface layer gold or aluminium lamination, finally removes unnecessary layer gold or aluminium lamination, obtain interdigital electrode；
Step 4: forming two symmetrical subregions with the symmetrical axis of interdigital electrode for axis of symmetry at device surface, described each subregion is the gas-sensitive film layer that same specific gas has different responses, thus preparing resistance-type gas sensor。
5. the preparation method of resistance-type gas sensor according to claim 4, it is characterised in that in described step 3, the thickness of nickel-chrome alloy layer is the thickness of 5～10nm, layer gold or aluminium lamination is 50～100nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610172151.4A CN105699441B (en) | 2016-03-24 | 2016-03-24 | A kind of resistance-type gas sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610172151.4A CN105699441B (en) | 2016-03-24 | 2016-03-24 | A kind of resistance-type gas sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105699441A true CN105699441A (en) | 2016-06-22 |
| CN105699441B CN105699441B (en) | 2018-04-13 |
Family
ID=56231369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610172151.4A Expired - Fee Related CN105699441B (en) | 2016-03-24 | 2016-03-24 | A kind of resistance-type gas sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105699441B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645308A (en) * | 2016-10-11 | 2017-05-10 | 南京工业大学 | Making method of acetone gas sensors based on alloy tungsten molybdenum disulfide nano-sheets |
| CN108088876A (en) * | 2017-12-29 | 2018-05-29 | 扬州大学 | It is a kind of can thermometric air-sensitive film test device and its application method |
| CN113552295A (en) * | 2021-08-19 | 2021-10-26 | 电子科技大学 | Controllable growth lead sulfide composite film gas sensor and preparation method thereof |
| CN114047232A (en) * | 2021-11-25 | 2022-02-15 | 长春工业大学 | Preparation method of resistance type gas sensor based on sheet-shaped composite film |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150340A (en) * | 1980-04-23 | 1981-11-20 | Yamatake Honeywell Co Ltd | Semiconductor detector for nitrogen oxide |
| JPH03100450A (en) * | 1989-09-14 | 1991-04-25 | Ngk Spark Plug Co Ltd | Gas sensor |
| JPH07318524A (en) * | 1994-05-30 | 1995-12-08 | Matsushita Seiko Co Ltd | Composite gas sensor |
| CN1885025A (en) * | 2006-07-11 | 2006-12-27 | 电子科技大学 | Organic nitrogen oxide sensitive composite material and nitrogen oxide gas sensor |
| CN101042363A (en) * | 2007-04-27 | 2007-09-26 | 电子科技大学 | polyaniline nanometer oxidate compound film micro-gas sensors array and method for making same |
| CN101832961A (en) * | 2010-05-04 | 2010-09-15 | 电子科技大学 | Quick-response resistance-type gas sensor and preparation method thereof |
| CN102944583A (en) * | 2012-11-30 | 2013-02-27 | 重庆大学 | Metal-oxide gas sensor array concentration detecting method based on drift compensation |
| CN103926278A (en) * | 2014-04-24 | 2014-07-16 | 电子科技大学 | Graphene-based ternary composite film gas sensor and preparation method thereof |
-
2016
- 2016-03-24 CN CN201610172151.4A patent/CN105699441B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150340A (en) * | 1980-04-23 | 1981-11-20 | Yamatake Honeywell Co Ltd | Semiconductor detector for nitrogen oxide |
| JPH03100450A (en) * | 1989-09-14 | 1991-04-25 | Ngk Spark Plug Co Ltd | Gas sensor |
| JPH07318524A (en) * | 1994-05-30 | 1995-12-08 | Matsushita Seiko Co Ltd | Composite gas sensor |
| CN1885025A (en) * | 2006-07-11 | 2006-12-27 | 电子科技大学 | Organic nitrogen oxide sensitive composite material and nitrogen oxide gas sensor |
| CN101042363A (en) * | 2007-04-27 | 2007-09-26 | 电子科技大学 | polyaniline nanometer oxidate compound film micro-gas sensors array and method for making same |
| CN101832961A (en) * | 2010-05-04 | 2010-09-15 | 电子科技大学 | Quick-response resistance-type gas sensor and preparation method thereof |
| CN102944583A (en) * | 2012-11-30 | 2013-02-27 | 重庆大学 | Metal-oxide gas sensor array concentration detecting method based on drift compensation |
| CN103926278A (en) * | 2014-04-24 | 2014-07-16 | 电子科技大学 | Graphene-based ternary composite film gas sensor and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| M. RAM ET AL.: "CO Gas sensing from ultrathin nano-composite conducting polymer film", 《SENSORS AND ACTUATORS B》 * |
| Y. ZHOU ET AL.: "A sensitive film structure improvement of reduced graphene oxide based resistive gas sensors", 《APPLIED PHYSICS LETTERS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645308A (en) * | 2016-10-11 | 2017-05-10 | 南京工业大学 | Making method of acetone gas sensors based on alloy tungsten molybdenum disulfide nano-sheets |
| CN108088876A (en) * | 2017-12-29 | 2018-05-29 | 扬州大学 | It is a kind of can thermometric air-sensitive film test device and its application method |
| CN113552295A (en) * | 2021-08-19 | 2021-10-26 | 电子科技大学 | Controllable growth lead sulfide composite film gas sensor and preparation method thereof |
| CN114047232A (en) * | 2021-11-25 | 2022-02-15 | 长春工业大学 | Preparation method of resistance type gas sensor based on sheet-shaped composite film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105699441B (en) | 2018-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5143696A (en) | Selective gas sensor | |
| CN105699441A (en) | Resistance-type gas sensor and manufacturing method thereof | |
| CN101836108B (en) | Organic chemical sensor comprising plasma-deposited microporous layer, and method of making and using | |
| US10782275B2 (en) | Semiconductor hydrogen sensor and manufacturing method thereof | |
| US20110308942A1 (en) | Microelectrode array sensor for detection of heavy metals in aqueous solutions | |
| CN104914138A (en) | Humidity sensor, humidity sensor array and preparation method thereof | |
| CN101363810A (en) | Gas-sensitive sensor and method for making same | |
| CN107132253A (en) | The preparation method and gas sensor of a kind of air-sensitive film based on flexible substrate | |
| CN102519779A (en) | Concentration and demineralization purification treatment method of biological samples | |
| JP2008128747A (en) | High sensitivity gas sensor and its manufacturing method | |
| US20050241939A1 (en) | Method and apparatus for providing and electrochemical gas sensor having a porous electrolyte | |
| WO2012115380A2 (en) | Sample plate for a maldi-tof mass spectrometer, and mass spectrometry method using the maldi-tof mass spectrometer implementing the sample plate | |
| CN102590280A (en) | Gas sensor array based on microwell structure and manufacturing method of gas sensor array | |
| CN107607611A (en) | A kind of high resolution mass spec analysis method using SPE direct injected | |
| CN101216448A (en) | Hydrogen sensor based on Pd-silver filament electrode | |
| CN110054791A (en) | MOFs- noble metal ordered composite material and its preparation method and application | |
| JP2008107209A (en) | Substrate for mass spectrometry, manufacturing method therefor, and mass spectrometry measuring device | |
| CN110849955B (en) | High-sensitivity ammonia gas sensor and preparation method thereof | |
| CN110361436B (en) | Gradient laminated array, preparation method and gas multi-component concentration detection method | |
| CN102768230B (en) | Vertical flat plate capacitive gas sensor and preparation method thereof | |
| CN112229905A (en) | High-selectivity bulk acoustic wave resonance hydrogen sensor and preparation method thereof | |
| JPH0664008B2 (en) | Gas sensor and manufacturing method thereof | |
| Filipovic et al. | CMOS-compatible gas sensors | |
| JPH04136748A (en) | Carbon thin-film electrode for electrochemical measurement and manufacture thereof | |
| CN113451436B (en) | Nitride ultraviolet avalanche photodetector and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180413 |