CN105695963B - The end blocking method of minisize component pin - Google Patents
The end blocking method of minisize component pin Download PDFInfo
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- CN105695963B CN105695963B CN201610270704.XA CN201610270704A CN105695963B CN 105695963 B CN105695963 B CN 105695963B CN 201610270704 A CN201610270704 A CN 201610270704A CN 105695963 B CN105695963 B CN 105695963B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10742—Details of leads
Abstract
The present invention provides a kind of end blocking method of minisize component pin, include the pretreatment process and plating process to pin, pretreatment process successively includes that degreasing degreasing processing, microetch processing, pre-preg and activation processing are carried out to minisize component, and the plating process to pin is that chemical nickel phosphorus plating, Electroless Pure Nickel Plating or electroless copper are one such；The present invention realizes the sealing end of the formed pin of minisize component separate type route using chemical plating, separate type pin connection is not only set to be formed uniformly sealing end coating, non-pinned region is not plated, and using this method to the sealing end of minisize component pin, suitable for industrialized production, the coating of sealing end is smooth, effectively prevent the migration of silver and improves the reliability of welding.
Description
Technical field
The invention belongs to microelectronics Packaging fields, are related to a kind of sealing end of formed pin of minisize component separate type route
Method.
Background technique
As the use of surface mounting technology and microelectronic circuit rapidly develop, electronic equipment is constantly towards miniaturization, light
Type, high-performance direction are developed, and to the reliability of minisize component, higher requirements are also raised, especially to minisize component
End pin configuration propose the requirement being applicable under the particular surroundings such as moisture-proof, high temperature, acidproof and mechanical strength be high.Hold the effect of pin
It is to draw pin exposed part by encapsulating minisize component Inside coil and formed with inner conductor to be connected, while also requiring end
Pin and substrate solder interconnections and the function of playing infinitesimal device.The closed-end technology of end pin is by different technologies by end
One layer of fine and close conductive layer is made on pin.
The closed-end technology of device includes two kinds of technology paths both at home and abroad at present: first is that complete using soaking paste, drying, sintering process
At electric slurry used is all generally silver paste, technology relative maturity；Second is that metal is closed using magnetron sputtering technique
Gold is splashed to device end and realizes sealing end.
Carrying out sealing end to pin using silver paste is most common component end blocking method.Document [electronic component and material,
2002,21 (5): 18~20] elaborating that chip resistor is coated with conductive silver slurry on strip substrates both sides, makes the bottom electricity of resistor
Pole is connected to face electrode, becomes an equal electricity entirety, to realize the sealing end of resistance；Document [electronics manufacturing engineering,
2006,27 (4): 209~211] elaborate that chip capacitor realizes the sealing end of capacitor using leaching copper slurry, drying, sintering process；Text
Offer [it plating and covers with paint, lacquer, colour wash, etc., 2002,21 (5): 7~10] elaborating after chip inductor coated silver paste sintering electroplated nickel, tin again, it is real
Existing three layers of end-electrode structure of chip inductor complete sealing end.Document above by soaking paste, drying, sintering process formed closed-end structure or
Subsequent electronickelling tin completes the sealing end of electronic component again, but is suffered from the drawback that using such closed-end technology first, needing to examine
Consider silver, the selection of copper conductive paste and the control of sintering curve and sintering atmosphere.Because the discomfort of electrocondution slurry or firing improper can make
At the not fine and close of conductive layer, there is phenomena such as bubble, pin hole, nigrescence, insufficient rubescent or dumping, it is layer soldering resistance, solderability, attached
Put forth effort to decline, aging does not pass through, or even holds up, moves, explodes on a printed circuit board, generating element peeling effect；Second, should
For production technology from soaking paste to sintering, the period is long, and production efficiency is low；Third, the technique must be sintered under certain protective atmosphere,
Therefore energy energy consumption is high, cost is big；Fourth, the volatile emission of solvent causes environmental pollution in drying sintering process, to operator
The health of member has some impact on；Fifth, silver paste is expensive；Although silver exists sixth, silver has excellent conductivity
In air containing chloride and sulfide, surface can change colour quickly and lose excellent conductive capability, during soldering, quilt
The silver layer of wetting can partially fuse among the wiping solder of melting, and " the molten phenomenon of silver " occurs, severely impacts the weldering of coating
It connects and electric conductivity.To solve this problem, such as document [plating and covering with paint, 2002,21 (5): 7~10] coated, dry in slurry
Re-plating nickel tin realizes that three layers of end-electrode structure complete sealing end after dry, sintering, and the coating after sealing end has ensured solderability, but increases
Subsequent electroplating work procedure makes process flow become complicated, and the process time lengthens.In addition, in silver paste capping process, component
Pin and non-pinned region are coated with silver paste, this closed-end structure will lead to component generate parasitic capacitance in Pin locations and
Its impedance matching is influenced, is unfavorable for sufficiently realizing the original electrical property of component.
Chinese invention patent CN 201410408094.6 then proposes to sputter metal nichrome using magnetron sputtering technique
It realizes and blocks to capacitor end.Although sealing end thickness is uniform, adhesive force is strong, connects with interior pin, and improve product can
It suffers from the drawback that by property and stability, but using such closed-end technology first, magnetron sputtering apparatus involved in the technique is high
It is expensive；Second, the implementation condition of the technique is harsh, it is necessary to be carried out under conditions of vacuum；Third, the technique blocks pre-treatment step
Device need to be carried out the arrangement of dew end by complexity, guarantee that device marshalling there is not gap closely；Fourth, the closed-end technology is accomplished that
Complete five faces sealing end, such sealing end mode can generate big parasitic capacitance, to influence the electrical property of minisize component.
Under the requirement that component improves impedance matching and electrical property, the prior art is unable to satisfy separate type route and is formed
The high-quality of pin blocks effect, needs to develop a kind of easy to operate, inexpensive closed-end technology, can effectively realize miniature
The local pin field sealing end of component in the non-pinned region of minisize component without coating, to effectively reduce parasitic capacitance
Generation, improve the electric property of minisize component, guarantee welding reliability.
Summary of the invention
The purpose of the present invention is in view of the above shortcomings of the prior art, provide a kind of simple process, low-cost miniature
The end blocking method of component separate type pin connection.For achieving the above object, technical solution of the present invention is as follows:
A kind of end blocking method of minisize component pin, it is described comprising the pretreatment process and plating process to pin
Pretreatment process successively includes that degreasing degreasing processing, microetch processing, pre-preg and activation processing, institute are carried out to minisize component
Stating to the plating process of pin is that chemical nickel phosphorus plating, Electroless Pure Nickel Plating or electroless copper are one such.
It is preferred that the degreasing degreasing processing impregnates minisize component using acid deoiling liquid, to go
Except the greasy dirt and oxide on minisize component pin connection surface.Acid deoiling liquid by acidic materials, acid surface active agent and
Deionized water mixed preparing forms, and the concentration of volume percent of middle acid substance is 3%~10%, acid surface active agent
Concentration of volume percent is 3%~10%.Degreasing degreasing processing condition be 40~50 DEG C of operation temperature, the time be 5~
20min。
The pin connection is selected from one kind of silver paste route, copper slurry route, carbon slurry circuit or wicker copper slurry route.
It is preferred that the acid surface active agent is sulfosuccinic acid ester sodium salt.
It is preferred that microetch processing impregnates minisize component using micro-corrosion liquid, micro-corrosion liquid or by
Sodium peroxydisulfate, sulfuric acid and deionized water mixed preparing form, and wherein the content of sodium peroxydisulfate is 10~100g/L, and sulfuric acid content is
20~200g/L；Or formed by hydrogen peroxide, ammonium hydroxide and deionized water mixed preparing, concentration is deionized water: ammonium hydroxide: dioxygen
The volume ratio of water is 1:1:(0.1~0.2), the condition of microetch processing is 25~30 DEG C of operation temperature, and the time is 2~10min.
The microetch processing step is used to the oxide on further removal pin connection surface, and by its surface etch one
Layer, makes surface become coarse, manifests pin connection, convenient for the attachment of coating, guarantees combining closely for coating and substrate.
It is preferred that the pre-preg impregnates minisize component using prepreg solution, it is miniature to adjust
Component's feet circuit surface adheres to the acid-base property of solution, maintains the acidity of activated bath；The prepreg solution includes acidic materials
And deionized water, acidic materials concentration of volume percent are 3%~10%, the condition of pre-preg is operation temperature 25~30
DEG C, the time is 1~2min.
It is preferred that described be activated soaks minisize component using the activating solution of the palladium ion containing divalent
Bubble, to deposit required catalysis crystal seed on pin connection surface.The activating solution is by acidic materials, divalent palladium ion and goes
Ionized water composition, wherein divalent palladium ion concentration is 10~100mg/L, and acidic materials concentration of volume percent is 3%~10%；
The condition of activation processing is 25~30 DEG C of operation temperature, and the time is 2~10min.
It is preferred that the acidic materials are selected from least one of hydrochloric acid, sulfuric acid, citric acid, salicylic acid.
Acidic materials mentioned above are the substance for being capable of providing Hydrogen Proton or capable of receiving an electronics pair.
The plating process is, by suitable reducing agent, to make the gold in plating solution in the case where no impressed current
Belong to ion reduction into metal, is deposited on the route with catalytic surface.The plating process selects chemical nickel phosphorus plating, changes
Learn one kind of plating pure nickel, electroless copper.
It is preferred that the plating process be chemical nickel phosphorus plating when, the formula of chemical nickel phosphorus plating include nickel salt,
Reducing agent, complexing agent, buffer, promotor, stabilizer and pH adjusting agent；The nickel salt be nickel chloride, nickel sulfate, nickel acetate,
One or more of nickel nitrate, nickel sulfamic acid, concentration are 10~60g/L；The reducing agent is sodium hypophosphite, concentration 20
~50g/L；The complexing agent is citric acid, lactic acid, malic acid, triethanolamine, glycine, disodium ethylene diamine tetraacetate, second two
Amine more than one, concentration be 0.1~50g/L；The buffer be sodium acetate, ammonium hydroxide-ammonium chloride, Glycine-NaOH,
Sodium carbonate more than one, concentration be 5~60g/L；The promotor is unsubstituted short chain saturated aliphatic dicarboxylic acids
Root anion such as malonic acid, succinic acid etc., one kind of short chain saturation amino acid such as amion acetic acid, short chain saturated fatty acid such as propionic acid
More than, concentration is 5~20g/L；The stabilizer be heavy metal ion or the molecule containing sulphur, heavy metal ion be lead, mercury,
One or more of cadmium, antimony, bismuth, molybdenum ion, concentration are 0.01~10mg/L, and sulfur-containing molecules are inorganic or organosulfur molecules, choosing
One of autovulcanization sodium, mercaptan, thioether, thiosulfate, rhodanate, thiourea process mercapto benzothiazole with
On, concentration is 0.01~10mg/L；The pH adjusting agent be ammonium hydroxide, sodium hydroxide, sulfuric acid more than one；Chemical nickel phosphorus plating
Condition is that pH value is 4.0~5.0, and operation temperature is 70~90 DEG C, 40~100min of plating time.
It is preferred that the plating process be Electroless Pure Nickel Plating when, the formula of Electroless Pure Nickel Plating include nickel salt,
Reducing agent, complexing agent, buffer, stabilizer and pH adjusting agent；The nickel salt be nickel chloride, nickel sulfate, nickel acetate, nickel nitrate,
Nickel sulfamic acid more than one, concentration be 10~60g/L；The reducing agent is hydrazine hydrate, and concentration is 100~260g/L；Institute
State complexing agent be citric acid, lactic acid, malic acid, ethanol amine, glycine, disodium ethylene diamine tetraacetate, ethylenediamine more than one,
Concentration is 0.1~50g/L；The buffer is one kind of sodium acetate, ammonium hydroxide-ammonium chloride, Glycine-NaOH, sodium carbonate
More than, concentration is 5~60g/L；The stabilizer be heavy metal ion or the molecule containing sulphur, heavy metal ion be lead, mercury,
One or more of cadmium, antimony, bismuth, molybdenum ion, concentration are 0.01~10mg/L, and sulfur-containing molecules are inorganic or organosulfur molecules,
Selected from vulcanized sodium, mercaptan, thioether, thiosulfate, rhodanate, thiourea process mercapto benzothiazole it is a kind of with
On, concentration is 0.01~10mg/L；The pH adjusting agent be ammonium hydroxide, sodium hydroxide, sulfuric acid more than one；Electroless Pure Nickel Plating
Condition is that pH value is 10.0~12.0, and operation temperature is 70~90 DEG C, 40~90min of plating time.
It is preferred that the formula of electroless copper includes mantoquita, reduction when the plating process is electroless copper
Agent, complexing agent, stabilizer and pH adjusting agent；The mantoquita is copper sulphate, copper chloride, basic copper carbonate, two in cupric tartrate
Valence mantoquita more than one, concentration be 5~30g/L；The reducing agent is formalin, and concentration is 4~12g/L；The network
Mixture is one or more combinations of sodium potassium tartrate tetrahydrate, disodium edta, salicylic acid, triethanolamine, and concentration is
10~50g/L；The stabilizer be one of methanol, Cymag, 2-mercaptobenzothiazole, bipyridyl, potassium ferrocyanide with
On, concentration is 0.1~10mg/L；The pH adjusting agent is sodium hydroxide or sodium carbonate, and concentration is 5~15g/L；Electroless copper
Condition be pH value be 12.0~13.0, operation temperature be 30~40 DEG C, 60~120min of plating time.
The invention has the benefit that realizing the envelope of the formed pin of minisize component separate type route using chemical plating
End, not only makes separate type pin connection be formed uniformly sealing end coating, and non-pinned region is not plated, and using this method to miniature
The sealing end of component's feet, be suitable for industrialized production, the coating of sealing end is smooth, effectively prevent silver migration and improve welding can
By property.
Detailed description of the invention
Fig. 1 is the flow chart of the end blocking method of minisize component pin of the present invention.
Fig. 2 is the preceding contrast schematic diagram with after sealing end of minisize component pin sealing end.
Fig. 3 is that minisize component separate type pin connection realizes the sealing end coating metallographic microscope after chemical nickel phosphorus plating.
Fig. 4 is that minisize component separate type pin connection realizes the sealing end coating metallographic microscope after Electroless Pure Nickel Plating.
Fig. 5 is that minisize component separate type pin connection realizes the sealing end coating metallographic microscope after electroless copper.
Wherein, 201 be ceramic bases, and 202 be separate type route, 203 for minisize component pin through pretreatment process and
Closed-end structure after plating process.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Embodiment 1
The method that the present embodiment takes chemical nickel phosphorus plating realizes the sealing end of the formed pin of minisize component separate type route,
Including following procedure step:
A, the pretreatment process of minisize component
Step 1: degreasing degreasing processing
Prepare the sulfosuccinate sodium that the sulfuric acid for being 3% by concentration of volume percent and concentration of volume percent are 3%
The acid deoiling liquid of salt and deionized water composition, by minisize component to be processed in 40 DEG C of soaking and washing 5min.The purpose is to
Remove minisize component pin connection (one kind that silver paste route, copper slurry route, carbon slurry circuit or wicker copper starch route) surface
Greasy dirt and oxide.
Step 2: microetch processing
The micro-corrosion liquid being made of 20g/L sulfuric acid, 10g/L sodium peroxydisulfate and deionized water is prepared, by the miniature member after washing
Device is immersed, and handles 2min at room temperature.The purpose is to further remove the oxide on pin connection surface, and by its table
Face etches one layer, so that surface is become coarse, manifests pin connection.
Step 3: pre-preg
The prepreg solution that the hydrochloric acid and deionized water that are 3% by concentration of volume percent form is prepared, it 25 DEG C of operation temperature, will
Minisize component after washing, which is placed in prepreg solution, handles 1min, and the purpose is to adjust the soda acid of pin connection surface attachment solution
Property maintains the acidity of activated bath.
Step 4: being activated
It prepares by 10mg/L palladium chloride, the hydrochloric acid that concentration of volume percent is 3% and the activating solution that deionized water forms, behaviour
Make 25 DEG C of temperature, preimpregnated minisize component is placed in immersion treatment 2min in activating solution.The purpose is in pin connection table
Crystal seed is catalyzed required for the deposition of face.
B, the plating process of minisize component
Step 5: implementing chemical nickel phosphorus plating
Plating solution presses nickel sulfate 10g/L, sodium hypophosphite 20g/L, citric acid 0.1g/L, lactic acid 27g/L, ethylenediamine tetra-acetic acid
Disodium 5g/L, sodium acetate 5g/L, succinic acid 5g/L and lead acetate 0.01mg/L, bismuth and ammonium citrate 1mg/L are configured to aqueous solution,
And adjusting pH value with dilute sulfuric acid, sodium hydroxide and ammonium hydroxide is 4.0, obtains chemical nickel phosphorus plating liquid.
Minisize component after activation washing is immersed in the chemical nickel-plating liquid that temperature is 70 DEG C, keeps 40min, completionization
Learn nickel-plated phosphor process.
In the present embodiment, before minisize component pin blocks as indicated with 2 with the schematic diagram after sealing end.The minisize component
It is made of ceramic bases 201, separate type route 202.Envelope of the minisize component pin after pretreatment process and plating process
End structure is 203.
The sealing end coating plating thickness for the minisize component separate type pin connection that the present embodiment obtains is 12 μm, deposit in acidic electroless Ni electrolyte
It is 9%~10%.Resulting chemical nickel plating phosphorous layer wearability is good, and solderability is good, can be compatible with a variety of scaling powders.Fig. 3 is this implementation
Sealing end coating metallographic microscope of the example in the formed pin of minisize component separate type route.
Embodiment 2
The method that the present embodiment takes Electroless Pure Nickel Plating realizes the sealing end of the formed pin of minisize component separate type route.
Including following procedure step:
A, the pretreatment process of minisize component
Step 1: degreasing degreasing processing
Prepare the sulfosuccinate that the hydrochloric acid for being 10% by concentration of volume percent and concentration of volume percent are 10%
The acid deoiling liquid of sodium salt and deionized water composition, by minisize component to be processed in 50 DEG C of soaking and washing 20min.Its purpose
It is to remove minisize component pin connection (one kind that silver paste route, copper slurry route, carbon slurry circuit or wicker copper starch route) table
The greasy dirt and oxide in face.
Step 2: microetch processing
The micro-corrosion liquid being made of 200g/L sulfuric acid, 100g/L sodium peroxydisulfate and deionized water is prepared, it will be miniature after washing
Component is immersed, and handles 10min at room temperature.The purpose is to further remove the oxide on pin connection surface, and will
One layer of its surface etch, makes surface become coarse, manifests pin connection.
Step 3: pre-preg
The prepreg solution that the hydrochloric acid and deionized water that preparation is 10% by concentration of volume percent form, 30 DEG C of operation temperature
Under, the minisize component after washing is placed in prepreg solution and handles 2min, the purpose is to adjust pin connection surface attachment solution
Acid-base property, maintain the acidity of activated bath.
Step 4: being activated
It prepares by 100mg/L palladium chloride, the hydrochloric acid that concentration of volume percent is 10% and the activating solution that deionized water forms,
30 DEG C of operation temperature, preimpregnated minisize component is placed in immersion treatment 10min in activating solution.The purpose is in pin connection
Crystal seed is catalyzed required for the deposition of surface.
B, the plating process of minisize component
Step 5: implementing Electroless Pure Nickel Plating
Plating solution presses nickel acetate 50g/L, hydrazine hydrate 260g/L, lactic acid 46g/L, ethanol amine 2g/L, sodium carbonate 60g/L and sulphur
Urea 10mg/L is configured to aqueous solution, and is 12.0 with the pH value that the sodium hydroxide of 1mol/L and ammonium hydroxide adjust solution.
Minisize component after activation washing is immersed in plating bath at a temperature of 90 °C, 90min is kept, it is pure to complete chemical plating
Nickel process.
The chemical Ni-plating layer plating thickness for the minisize component separate type pin connection that the present embodiment obtains is 11 μm, not phosphorous member
Element, the nickel layer have preferable solderability, and to not phosphorus element-containing etc., other nonmetallic microelectronics for having particular/special requirement are blocked especially
It is applicable in.Fig. 4 is formed the sealing end coating metallographic microscope of pin by the present embodiment in minisize component separate type route.
Embodiment 3
The method that the present embodiment takes electroless copper realizes the sealing end of the formed pin of minisize component separate type route.Packet
Include following procedure step:
A, the pretreatment process of minisize component
Step 1: degreasing degreasing processing
Prepare the sulfosuccinate that the citric acid for being 6% by concentration of volume percent and concentration of volume percent are 7%
The acid deoiling liquid of sodium salt and deionized water composition, by minisize component to be processed in 45 DEG C of soaking and washing 15min.Its purpose
It is to remove minisize component pin connection (one kind that silver paste route, copper slurry route, carbon slurry circuit or wicker copper starch route) table
The greasy dirt and oxide in face.
Step 2: microetch processing
The micro-corrosion liquid being made of 100g/L sulfuric acid, 60g/L sodium peroxydisulfate and deionized water is prepared, by the miniature member after washing
Device is immersed, and handles 5min at room temperature.The purpose is to further remove the oxide on pin connection surface, and by its table
Face etches one layer, so that surface is become coarse, manifests pin connection.
Step 3: pre-preg
The prepreg solution that the citric acid and deionized water that preparation is 6% by concentration of volume percent form, 27 DEG C of operation temperature
Under, the minisize component after washing is placed in prepreg solution and handles 1.5min, it is molten the purpose is to adjust the attachment of pin connection surface
The acid-base property of liquid maintains the acidity of activated bath.
Step 4: being activated
It prepares by 60mg/L palladium chloride, the citric acid that concentration of volume percent is 6% and the activating solution that deionized water forms,
28 DEG C of operation temperature, preimpregnated minisize component is placed in immersion treatment 5min in activating solution.The purpose is in pin connection
Crystal seed is catalyzed required for the deposition of surface.
B, the plating process of minisize component
Step 5: implementing electroless copper
Plating solution presses copper chloride 5g/L, copper sulphate 2g/L, formaldehyde 4g/L, disodium EDTA 20g/L, potassium tartrate
Sodium 10g/L, sodium hydroxide 15g/L and 2-mercaptobenzothiazole 2mg/L are configured to aqueous solution, and the pH value for adjusting solution is
12.5。
Minisize component after activation washing is immersed in the plating bath that temperature is 35 DEG C, it is empty to increase lasting compression in plating bath
Gas bell keeps 90min, completes electroless copper process.
The chemical plating copper layer plating thickness for the minisize component separate type pin connection that the present embodiment obtains is 7 μm, layers of copper tool
There are good corrosion resistance, electric reliability, while applying also for the metalized of the microelectronics Packaging of Nonconductor surface, coating point
Cloth is uniform.Fig. 5 is formed the sealing end coating metallographic microscope of pin by the present embodiment in minisize component separate type route.
Embodiment 4
The method that the present embodiment takes chemical nickel phosphorus plating realizes the sealing end of the formed pin of minisize component separate type route,
Including following procedure step:
A, the pretreatment process of minisize component
Step 1: degreasing degreasing processing
Prepare the sulfosuccinate that the salicylic acid for being 8% by concentration of volume percent and concentration of volume percent are 8%
The acid deoiling liquid of sodium salt and deionized water composition, by minisize component to be processed in 42 DEG C of soaking and washing 15min.Its purpose
It is to remove minisize component pin connection (one kind that silver paste route, copper slurry route, carbon slurry circuit or wicker copper starch route) table
The greasy dirt and oxide in face.
Step 2: microetch processing
The micro-corrosion liquid mixed by hydrogen peroxide, ammonium hydroxide and deionized water is prepared, concentration is deionized water: ammonium hydroxide: double
The volume ratio of oxygen water is 1:1:(0.1~0.2).Minisize component after washing is immersed, at room temperature handle 5~
10min.The purpose is to further remove the oxide on pin connection surface, and by one layer of its surface etch, surface is made to become thick
It is rough, manifest pin connection.
Step 3: pre-preg
Preparing the prepreg solution that the salicylic acid and deionized water that are 6% by concentration of volume percent form will wash at room temperature
Minisize component afterwards, which is placed in prepreg solution, handles 1min, and 28 DEG C of operation temperature, the purpose is to adjust the attachment of pin connection surface
The acid-base property of solution maintains the acidity of activated bath.
Step 4: being activated
It prepares by 30mg/L palladium chloride, the salicylic acid that concentration of volume percent is 6% and the activating solution that deionized water forms,
26 DEG C of operation temperature, preimpregnated minisize component is placed in immersion treatment 8min in activating solution.The purpose is in pin connection
Crystal seed is catalyzed required for the deposition of surface.
B, the plating process of minisize component
Step 5: implementing chemical nickel phosphorus plating
Plating solution presses nickel sulfamic acid 50g/L, sodium hypophosphite 50g/L, citric acid 5g/L, lactic acid 20g/L, ethylenediamine 5g/
L, sodium acetate 8g/L, amion acetic acid 5g/L and lead acetate 0.5mg/L, bismuth and ammonium citrate 1mg/L are configured to aqueous solution, and with dilute
It is 5.0 that sulfuric acid, sodium hydroxide and ammonium hydroxide, which adjust pH value, obtains chemical nickel phosphorus plating liquid.
Minisize component after activation washing is immersed in the chemical nickel-plating liquid that temperature is 85 DEG C, keeps 80min, completionization
Learn nickel-plated phosphor process.
The sealing end coating plating thickness for the minisize component separate type pin connection that the present embodiment obtains is 8 μm, deposit in acidic electroless Ni electrolyte
It is 8%~9%.Resulting chemical nickel plating phosphorous layer wearability is good, and solderability is good, can be compatible with a variety of scaling powders.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (7)
1. a kind of end blocking method of minisize component pin, it is characterised in that: include the pretreatment process and chemical plating to pin
Process, the pretreatment process successively include that degreasing degreasing processing, microetch processing, pre-preg and work are carried out to minisize component
Change processing, the plating process to pin are that chemical nickel phosphorus plating, Electroless Pure Nickel Plating or electroless copper are one such；Draw
Payment to a porter road is selected from one kind of silver paste route, copper slurry route, carbon slurry circuit or wicker copper slurry route；It is completed by this end blocking method
After metallization, separate type route finally joins together, and forms route pin closed-end structure interconnected in pin field；
When the plating process is chemical nickel phosphorus plating, the formula of chemical nickel phosphorus plating includes nickel salt, reducing agent, complexing agent, delays
Electuary, promotor, stabilizer and pH adjusting agent；The nickel salt is nickel chloride, nickel sulfate, nickel acetate, nickel nitrate, nickel sulfamic acid
One or more of, concentration is 10~60g/L；The reducing agent is sodium hypophosphite, and concentration is 20~50g/L；The complexing
Agent be citric acid, lactic acid, malic acid, triethanolamine, glycine, disodium ethylene diamine tetraacetate, ethylenediamine more than one, concentration
For 0.1~50g/L；The buffer be sodium acetate, ammonium hydroxide-ammonium chloride, Glycine-NaOH, sodium carbonate more than one,
Its concentration is 5~60g/L；The promotor is unsubstituted short chain saturated aliphatic dicarboxylic acids root anion, short chain saturation
Amino acid, short chain saturated fatty acid more than one, concentration be 5~20g/L；The stabilizer is heavy metal ion or contains sulphur
Molecule, heavy metal ion be one or more of lead, mercury, cadmium, antimony, bismuth, molybdenum ion, concentration be 0.01~10mg/L, sulfur-bearing
Molecule is inorganic or organosulfur molecules, is selected from vulcanized sodium, mercaptan, thioether, thiosulfate, rhodanate, thiocarbamide and its derivative
One or more of object mercapto benzothiazole, concentration are 0.01~10mg/L；The pH adjusting agent is ammonium hydroxide, sodium hydroxide, sulphur
Acid more than one；The condition of chemical nickel phosphorus plating is that pH value is 4.0~5.0, and operation temperature is 70~90 DEG C, plating time 40~
100min；
When the plating process is Electroless Pure Nickel Plating, the formula of Electroless Pure Nickel Plating includes nickel salt, reducing agent, complexing agent, delays
Electuary, stabilizer and pH adjusting agent；The nickel salt is one kind of nickel chloride, nickel sulfate, nickel acetate, nickel nitrate, nickel sulfamic acid
More than, concentration is 10~60g/L；The reducing agent is hydrazine hydrate, and concentration is 100~260g/L；The complexing agent be citric acid,
Lactic acid, malic acid, ethanol amine, glycine, disodium ethylene diamine tetraacetate, ethylenediamine more than one, concentration be 0.1~50g/L；
The buffer be sodium acetate, ammonium hydroxide-ammonium chloride, Glycine-NaOH, sodium carbonate more than one, concentration be 5~
60g/L；The stabilizer is heavy metal ion or the molecule containing sulphur, and heavy metal ion is lead, mercury, cadmium, antimony, bismuth, molybdenum ion
One or more of, concentration be 0.01~10mg/L, sulfur-containing molecules be inorganic or organosulfur molecules, selected from vulcanized sodium, mercaptan,
Thioether, thiosulfate, rhodanate, thiourea process mercapto benzothiazole more than one, concentration be 0.01~
10mg/L；The pH adjusting agent be ammonium hydroxide, sodium hydroxide, sulfuric acid more than one；The condition of Electroless Pure Nickel Plating is that pH value is
10.0~12.0, operation temperature is 70~90 DEG C, 40~90min of plating time；
When the plating process is electroless copper, the formula of electroless copper includes mantoquita, reducing agent, complexing agent, stabilizer
And pH adjusting agent；The mantoquita be copper sulphate, copper chloride, basic copper carbonate, cupric salt in cupric tartrate more than one,
Concentration is 5~30g/L；The reducing agent is formalin, and concentration is 4~12g/L；The complexing agent be sodium potassium tartrate tetrahydrate,
One or more combinations of disodium edta, salicylic acid, triethanolamine, concentration are 10~50g/L；The stabilization
Agent is one or more of methanol, Cymag, 2-mercaptobenzothiazole, bipyridyl, potassium ferrocyanide, and concentration is 0.1~10mg/
L；The pH adjusting agent is sodium hydroxide or sodium carbonate, and concentration is 5~15g/L；The condition of electroless copper is that pH value is 12.0
~13.0, operation temperature is 30~40 DEG C, 60~120min of plating time.
2. the end blocking method of minisize component pin according to claim 1, it is characterised in that: the degreasing degreasing processing
Minisize component is impregnated using acid deoiling liquid, acid deoiling liquid by acidic materials, acid surface active agent and go from
Sub- water mixed preparing forms, and the concentration of volume percent of middle acid substance is 3%~10%, the volume of acid surface active agent
Percent concentration is 3%~10%, and the condition of degreasing degreasing processing is 40~50 DEG C of operation temperature, and the time is 5~20min.
3. the end blocking method of minisize component pin according to claim 2, it is characterised in that: the acid surface active
Agent is sulfosuccinic acid ester sodium salt.
4. the end blocking method of minisize component pin according to claim 1, it is characterised in that: the microetch processing uses
Micro-corrosion liquid impregnates minisize component, micro-corrosion liquid or is formed by sodium peroxydisulfate, sulfuric acid and deionized water mixed preparing,
The content of middle sodium peroxydisulfate is 10~100g/L, and sulfuric acid content is 20~200g/L；Or by hydrogen peroxide, ammonium hydroxide and deionized water
Mixed preparing forms, and concentration is deionized water: ammonium hydroxide: the volume ratio of hydrogen peroxide is 1:1:(0.1~0.2), microetch processing
Condition is 25~30 DEG C of operation temperature, and the time is 2~10min.
5. the end blocking method of minisize component pin according to claim 1, it is characterised in that: the pre-preg uses
Prepreg solution impregnates minisize component, and the prepreg solution includes acidic materials and deionized water, acidic materials volume basis
Specific concentration is 3%~10%, and the condition of pre-preg is 25~30 DEG C of operation temperature, and the time is 1~2min.
6. the end blocking method of minisize component pin according to claim 1, it is characterised in that: the activation processing uses
The activating solution of the palladium ion containing divalent impregnates minisize component, and the activating solution is by acidic materials, divalent palladium ion and goes
Ionized water composition, wherein divalent palladium ion concentration is 10~100mg/L, and acidic materials concentration of volume percent is 3%~10%；
The condition of activation processing is 25~30 DEG C of operation temperature, and the time is 2~10min.
7. according to the end blocking method of minisize component pin described in claim 2 or 5 or 6, it is characterised in that: the acid
Matter is selected from least one of hydrochloric acid, sulfuric acid, citric acid, salicylic acid.
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| CN109797382A (en) * | 2019-04-09 | 2019-05-24 | 滁州市苏深表面处理有限公司 | A kind of frosting chemical nickel crosses the preparation method of liquid |
| CN110195244B (en) * | 2019-06-05 | 2021-04-20 | 博敏电子股份有限公司 | Method for inhibiting growth of electrotinning tin whiskers of printed circuit board |
| CN110484899A (en) * | 2019-09-19 | 2019-11-22 | 东莞市通科电子有限公司 | A kind of chemical nickel-plating liquid and its nickel plating technology for electronic component pin nickel plating |
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