CN105656463A - Protection circuit applied to super junction MOS (metal oxide semiconductor) - Google Patents
Protection circuit applied to super junction MOS (metal oxide semiconductor) Download PDFInfo
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- CN105656463A CN105656463A CN201610206185.0A CN201610206185A CN105656463A CN 105656463 A CN105656463 A CN 105656463A CN 201610206185 A CN201610206185 A CN 201610206185A CN 105656463 A CN105656463 A CN 105656463A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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Abstract
The invention discloses a protection circuit applied to a super junction MOS (metal oxide semiconductor). The protection circuit comprises a resistor R1 and PWM IC1, wherein the resistor R1 is connected in series with high voltage HV and a resistor R2; R2 is connected in series with a diode Z1 and R5; a capacitor C2 is connected in parallel with a resistor R4 which is connected in parallel with a resistor R3; a capacitor C3 is electrically connected with a common terminal of the PWM IC1, another pin of the PWM IC1 is electrically connected with a pin 1 of an IC1 Comp; the pin 1 of the IC1 Comp is connected with an NPN triode Q2 and an NPN triode Q3; the capacitor C2 is connected to the pin 1 of the IC1 Comp. The protection circuit can be applied to a single-stage PFC circuit or an available adapter and can solve like problems of CoolMos, compared with the MOS in the same specification, the RDS (ON) of the CoolMos is low, loss is reduced, the efficiency of whole machine is increased, the product cost can be reduced, higher power density can be realized, and product advantages are realized.
Description
Technical field
The invention belongs to LED power technical field, particularly relate to the protection circuit of a kind of super knot MOS application, be specifically applied in the circuit that can use super knot MOS, protection super knot MOS.
Background technology
Along with the progress of technology, the development of present CoolMOS is little towards Rds (ON), and electric current is big, chip is little, and production technique is more ripe, and the direction that cost is lower is developed, but because chip area is little, the ability of its shock-resistant electric current, the ability of anti-snowslide also can along with decline. Electric current impact under high temperature and the sparking electric current impact in production etc. can produce bad; in actual application; can therefore be restricted; quite serious customer complaint or indemnity is produced time more serious; in the case; now invent the protection circuit of a kind of CoolMOS (super knot MOS), it is possible to effective protection is to the effective head it off of CoolMOS..
Summary of the invention
The present invention is to provide the protection circuit of a kind of super knot MOS application; the CoolMOS (super knot MOS) being particularly applied in single-stage PFC LED power provides protection circuit; prevent MOS produce and test and client terminal because of various more severe applicable cases under to MOS provide protection; prevent CoolMOS because of collapse in the case; and produce bad; fully use the excellent formula of CoolMOS, make competitive power of product strong.
In order to realize above-mentioned purpose, present invention employs following technical scheme:
The protection circuit of a kind of super knot MOS application, comprise resistance R1 and PWMIC1, described resistance R1 connects with high voltage electric HV and R2 respectively, described R2 connects with diode Z1 and R5 respectively, described diode Z1 and R5 is in parallel, described diode Z1 connects with resistance R10 and NPN type triode respectively, described resistance R10 and NPN type triode Q2 is in parallel, described resistance R10 connects with resistance R16, described resistance R16 is in parallel with NPN type triode Q2, and resistance R16 is serially connected with NPN type triode Q3, described resistance R16 is connected to ground wire, two pins of described NPN type triode Q3 are connected with two pins of NPN type triode Q2, and another pin of described NPN type triode Q3 is connected to ground wire, described R5 connects with resistance R4 and electric capacity C3 respectively, described resistance R4 and electric capacity C2 connects, described electric capacity C2 is parallel to resistance R4, described resistance R4 is in parallel with resistance R3, the public end of described electric capacity C3 and PWMIC (SD6**) is electrically connected, another pin of described PWMIC1 and IC1Comp1 pin pin are electrically connected, IC1Comp1 pin pin is connected with NPN type triode Q2 and NPN type triode Q3 respectively, described electric capacity C2 is connected to IC1Comp1 pin pin.
Preferably, described resistance R3 is in parallel with electric capacity C12, and described electric capacity C12 is connected to the public end of ground wire and PWMIC1.
Present invention also offers the protection method of a kind of super knot MOS application; the method is when abnormal exchange input; by voltage during detection input; the Ton time of IC is turned off during overvoltage; and then the Id of CoolMOS is reduced; playing and prevent transformer saturated, the function of protection CoolMOS, concrete working process is as follows:
S1, when exchange have higher input voltage to come in time, through resistance R1 and R2 detect dividing potential drop be added to Z1 when input voltage enough high, Z1 is punctured, this voltage is directly added to Q2, Q3 and Vbe the two poles of the earth;
S2, when Q2, Q3 and Vbe voltage is elevated to the forward voltage of triode gradually, then Q2 and Q3 conducting, then draw IC1Comp1 pin pin low;
S3, when IC1Comp1 pin pin is low, then the Ton time of IC being drawn short, control MOSId, allow MOS turn off in advance, in order to avoid entering state of saturation, and then protection CoolMOS avoids entering snowslide and damages to thermal runaway.
The protection circuit of a kind of super provided by the invention knot MOS application, compared with LED circuit, the circuit better protecting CoolMOS that the present invention passes through to increase is in abnormal cases to the voltage current impact of MOS, prevent transformer saturated, reducing the snowslide chance of CoolMOS, effective protection CoolMOS is unlikely to damage; Circuit application of the present invention is in single-stage PFC circuit, or can in general adapter, CoolMOS same problems can be solved, little relative to the MOS of same specification, CoolMOSRDS (ON), reduce loss, improve complete machine efficiency, the cost of product can be reduced, accomplish higher power density, it is achieved the excellent formula of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only the present invention's part embodiment, instead of whole embodiments.
Please refer to Fig. 1, present invention employs following technical scheme:
The protection circuit of a kind of super knot MOS application, comprise resistance R1 and PWMIC1, described resistance R1 connects with high voltage electric HV and R2 respectively, described R2 connects with diode Z1 and R5 respectively, described diode Z1 and R5 is in parallel, described diode Z1 connects with resistance R10 and NPN type triode respectively, described resistance R10 and NPN type triode Q2 is in parallel, described resistance R10 connects with resistance R16, described resistance R16 is in parallel with NPN type triode Q2, and resistance R16 is serially connected with NPN type triode Q3, described resistance R16 is connected to ground wire, two pins of described NPN type triode Q3 are connected with two pins of NPN type triode Q2, and another pin of described NPN type triode Q3 is connected to ground wire, described R5 connects with resistance R4 and electric capacity C3 respectively, described resistance R4 and electric capacity C2 connects, described electric capacity C2 is parallel to resistance R4, described resistance R4 is in parallel with resistance R3, described resistance R3 is in parallel with electric capacity C12, described electric capacity C12 is connected to the public end of ground wire and PWMIC1, the public end of described electric capacity C3 and PWMIC1 is electrically connected, another pin of described PWMIC1 and IC1Comp1 pin pin are electrically connected, IC1Comp1 pin pin is connected with NPN type triode Q2 and NPN type triode Q3 respectively, described electric capacity C2 is connected to IC1Comp1 pin pin.
Present invention also offers the protection method of a kind of super knot MOS application; the method is when abnormal exchange input; by voltage during detection input; the Ton time of IC is turned off during overvoltage; and then the Id of CoolMOS is reduced; playing and prevent transformer saturated, the function of protection CoolMOS, concrete working process is as follows:
S1, when exchange have higher input voltage to come in time, through resistance R1 and R2 detect dividing potential drop be added to Z1 when input voltage enough high, Z1 is punctured, this voltage is directly added to Q2, Q3 and Vbe the two poles of the earth;
S2, when Q2, Q3 and Vbe voltage is elevated to the forward voltage of triode gradually, then Q2 and Q3 conducting, then draw IC1Comp1 pin pin low;
S3, when IC1Comp1 pin pin is low, then the Ton time of IC being drawn short, control MOSId, allow MOS turn off in advance, in order to avoid entering state of saturation, and then protection CoolMOS avoids entering snowslide and damages to thermal runaway.
From subordinate list it may be seen that add lightning protection circuit energy available protecting MOS, in order to avoid MOS exceeds standard at voltage stress current stress, and damage. After 700VCoolMOS applies lightning prevention circuit, drop to 574V by exceeding voltage stress 785V, 10% voltage stress requirement of design surplus can be met completely.
In sum: the present invention in abnormal cases to the voltage current impact of MOS, prevents transformer saturated by the circuit better protecting CoolMOS of increase, reduces the snowslide chance of CoolMOS, effective protection CoolMOS is unlikely to damage; Circuit application of the present invention is in single-stage PFC circuit, or can in general adapter, CoolMOS same problems can be solved, little relative to the MOS of same specification, CoolMOSRDS (ON), reduce loss, improve complete machine efficiency, the cost of product can be reduced, accomplish higher power density, it is achieved the excellent formula of product.
The above; it is only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; any it is familiar with those skilled in the art in the technical scope that the present invention discloses; technical scheme and invention design thereof according to the present invention are equal to replacement or are changed, and all should be encompassed within protection scope of the present invention.
Claims (3)
1. the protection circuit of a super knot MOS application, comprise resistance R1 and PWMIC1, it is characterized in that: described resistance R1 connects with high voltage electric HV and R2 respectively, described R2 connects with diode Z1 and R5 respectively, described diode Z1 and R5 is in parallel, described diode Z1 connects with resistance R10 and NPN type triode respectively, described resistance R10 and NPN type triode Q2 is in parallel, described resistance R10 connects with resistance R16, described resistance R16 is in parallel with NPN type triode Q2, and resistance R16 is serially connected with NPN type triode Q3, described resistance R16 is connected to ground wire, two pins of described NPN type triode Q3 are connected with two pins of NPN type triode Q2, and another pin of described NPN type triode Q3 is connected to ground wire, described R5 connects with resistance R4 and electric capacity C3 respectively, described resistance R4 and electric capacity C2 connects, described electric capacity C2 is parallel to resistance R4, described resistance R4 is in parallel with resistance R3, the public end of described electric capacity C3 and PWMIC1 is electrically connected, another pin of described PWMIC1 and IC1Comp1 pin pin are electrically connected, IC1Comp1 pin pin is connected with NPN type triode Q2 and NPN type triode Q3 respectively, described electric capacity C2 is connected to IC1Comp1 pin pin.
2. the protection circuit of a kind of super according to claim 1 knot MOS application, it is characterised in that: described resistance R3 is in parallel with electric capacity C12, and described electric capacity C12 is connected to the public end of ground wire and PWMIC1.
3. the protection method of a super according to claim 1 knot MOS application; it is characterized in that: the method is when abnormal exchange input; by voltage during detection input; the Ton time of IC is turned off during overvoltage; and then the Id of CoolMOS is reduced; playing and prevent transformer saturated, the function of protection CoolMOS, concrete working process is as follows:
S1, when exchange have higher input voltage to come in time, through resistance R1 and R2 detect dividing potential drop be added to Z1 when input voltage enough high, Z1 is punctured, this voltage is directly added to Q2, Q3 and Vbe the two poles of the earth;
S2, when Q2, Q3 and Vbe voltage is elevated to the forward voltage of triode gradually, then Q2 and Q3 conducting, then draw IC1Comp1 pin pin low;
S3, when IC1Comp1 pin pin is low, then the Ton time of IC being drawn short, control MOSId, allow MOS turn off in advance, in order to avoid entering state of saturation, and then protection CoolMOS avoids entering snowslide and damages to thermal runaway.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610206185.0A CN105656463B (en) | 2016-04-05 | 2016-04-05 | Protection circuit for super-junction MOS application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610206185.0A CN105656463B (en) | 2016-04-05 | 2016-04-05 | Protection circuit for super-junction MOS application |
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| CN105656463A true CN105656463A (en) | 2016-06-08 |
| CN105656463B CN105656463B (en) | 2023-08-15 |
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| CN201610206185.0A Active CN105656463B (en) | 2016-04-05 | 2016-04-05 | Protection circuit for super-junction MOS application |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011160319A1 (en) * | 2010-06-25 | 2011-12-29 | 深圳市欣锐特科技有限公司 | Led lamp fault processing method, led driver and led lamp |
| CN103795037A (en) * | 2014-01-17 | 2014-05-14 | 无锡市金赛德电子有限公司 | Switching power supply protecting circuit and switching power supply including same |
| WO2014110850A1 (en) * | 2013-01-21 | 2014-07-24 | 深圳市华星光电技术有限公司 | Backlight drive circuit overvoltage protection method |
| CN203933357U (en) * | 2014-05-17 | 2014-11-05 | 徐云鹏 | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment |
| CN204559975U (en) * | 2015-05-06 | 2015-08-12 | 罗松定 | A kind of stabilization protective circuit |
| CN204668923U (en) * | 2015-05-26 | 2015-09-23 | 国家电网公司 | Switch power over-voltage protection circuit |
| CN205566251U (en) * | 2016-04-05 | 2016-09-07 | 深圳市莱福德光电有限公司 | Protection circuit that MOS used is tied to super utmost point |
-
2016
- 2016-04-05 CN CN201610206185.0A patent/CN105656463B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011160319A1 (en) * | 2010-06-25 | 2011-12-29 | 深圳市欣锐特科技有限公司 | Led lamp fault processing method, led driver and led lamp |
| WO2014110850A1 (en) * | 2013-01-21 | 2014-07-24 | 深圳市华星光电技术有限公司 | Backlight drive circuit overvoltage protection method |
| CN103795037A (en) * | 2014-01-17 | 2014-05-14 | 无锡市金赛德电子有限公司 | Switching power supply protecting circuit and switching power supply including same |
| CN203933357U (en) * | 2014-05-17 | 2014-11-05 | 徐云鹏 | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment |
| CN204559975U (en) * | 2015-05-06 | 2015-08-12 | 罗松定 | A kind of stabilization protective circuit |
| CN204668923U (en) * | 2015-05-26 | 2015-09-23 | 国家电网公司 | Switch power over-voltage protection circuit |
| CN205566251U (en) * | 2016-04-05 | 2016-09-07 | 深圳市莱福德光电有限公司 | Protection circuit that MOS used is tied to super utmost point |
Non-Patent Citations (1)
| Title |
|---|
| "兼具超结技术和传统高压器件优势的下一代CoolMOS MOSFET" * |
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| CN105656463B (en) | 2023-08-15 |
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