CN201869166U - Ultralow-temperature low-noise amplifier - Google Patents
Ultralow-temperature low-noise amplifier Download PDFInfo
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- CN201869166U CN201869166U CN2010206456354U CN201020645635U CN201869166U CN 201869166 U CN201869166 U CN 201869166U CN 2010206456354 U CN2010206456354 U CN 2010206456354U CN 201020645635 U CN201020645635 U CN 201020645635U CN 201869166 U CN201869166 U CN 201869166U
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Abstract
The utility model discloses an ultralow-temperature low-noise amplifier comprising an input matching circuit, a low-noise GaAsPHEMT thyristor, an output matching circuit, a feed circuit and an antistatic circuit, wherein a signal input end is sequentially and electrically connected with an input matching circuit, the low-noise GaAsPHEMT thyristor and the output matching circuit, an input end of the feed circuit is connected with an output matching circuit, an output end of the feed circuit is connected with the low-noise GaAsPHEMT thyristor, and the input matching circuit and the output matching circuit are respectively connected with the antistatic circuit. The ultralow-temperature low-noise amplifier can work under ultralow temperature and high-vacuum environments, has the characteristics of high gain, low noise coefficient and good moving standing wave ratio, and is high in reliability, static-resistant, small in volume, does not emit harmful gas and can self output feed.
Description
Technical field
The utility model relates to wireless communication field, comprises space and land, moves and fixing wireless communication field.
Background technology
Existing cordless communication network exists the four problems that can't resolve for a long time with prior art and equipment, and this four problems is:
1, because the restriction of geographical position (ocean, desert and hills etc.), environmental protection and right-safeguarding (commercial and residential quarter and historic reservation etc.) and the condition of building a station (electric power, iron tower, transmission, fund etc.) can't solve communication coverage hole problem by newly-built station.
2, because wireless terminal device is subjected to restrictions such as little antenna size, battery capacity, transmitting power, terminal (can make mobile phone or wireless Internet card etc. to land mobile communication network, to satellite communication can be transponder) (land mobile communication network is called the base station to main website, to satellite communication can be ground station) transmission link be weak link, its performance is well below main website to the link of terminal performance, promptly there is uplink and downlink link imbalance problem, and weak link has determined the covering and the communication quality of network, becomes the bottleneck of realizing the high performance network system.
3, the number of present all kinds of main website and terminal equipment increases severely day by day, wireless communication frequency resource anxiety, use spectral frequencies more and more higher, propagation characteristic worse and worse, the main website spacing is more and more nearer, it is serious day by day that Intranet and competition net and other disturb the frequency that produces to pollute, and the main website snr of received signal is descended, and has a strong impact on communication covering, communication quality and power system capacity.
4, CDMA(Code Division Multiple Access, code division multiple access) system of standard exists the self-interference between code channel, produce cell breath, add all kinds of air interference and the soft handover that needs 30% fixed channel expense, often make system operating capacity not reach 60% of theoretical capacity.
Above-mentioned four problems causes wide coverage distance deficiency, covers that the signal penetration rate is low deeply, degradation problem under communication quality variation, frequency and power system capacity and utilization rate of equipment and installations reduction, rate of return on investment and the user satisfaction.At an above difficult problem, what adopt at present all is conventional art means and the equipment that falls behind, and analogy increases new main website equipment, increases the carrier number of main website, sets up tower and puts equipment and repeater equipment and microcellulor indoor distributed system equipment etc. are installed.
Adopt the shortcoming of conventional art means and equipment as follows:
1, the receiver of existing all devices does not all have, very precipitous with the conventional art characteristic that also can not accept filter, it is little to insert minimum, the wide passband passband fluctuation of loss, squareness factor is near 1 radio frequency band filter, the interference of filtering passband outer (stopband) effectively, reach these interference of reduction and enter the Intermodulation Interference that receiver further causes, raised system's back noise.
2, above-mentioned all devices amplifies simultaneously to signal and the noise that receives, be that noise adds up receiving on the link, rather than weaken, the result be received signal quality worse and worse.
3, the low noise amplifier of the receiver radio frequency front end of above-mentioned all devices is worked at normal temperatures, because the electronics Brownian movement produces thermal noise, amplifier has amplified the noise that self produces, and has raised system's back noise, makes signal-to-noise ratio degradation.Influence communication covering seriously and quality and capacity.
4, communication covering and poor quality's place, the zone of the network planning often, main website layout unreasonable (, sub-district too high switch frequent or covering and frequency planning unreasonable etc.), pilot pollution and all kinds of serious interference such as land mobile base station closeness, increase main website, frequency configuration and equipment disposition in these zones, great amount of investment but brings interference and frequency to pollute further seriously often, system and maintenance costs increase, and resource utilizations such as frequency and equipment further reduce.In fact, the most of interference source of network and the source of trouble come from that tower is put, repeater and indoor distributed system, severe contamination network environment.
5, because factors such as available resources, internal and external interference and business demand quantitative changeization are not self controllable, be the passive engineering of mending the fold after the sheep is lost forever so solve problem with above-mentioned method and technology.
In sum, use existing traditional technological means and equipment fundamentally not solve: to remove outer the interference and Intermodulation Interference; Reduction system self back noise; Improve problem effectively to the gain and the sensitivity of useful signal.
At the problems referred to above, the applicant has proposed a thinking and a technical scheme of overlapping the brand-new network planning, construction, optimization and O﹠M: the superconductor technology of utilizing that installs a kind of applicant's independent development at wireless main website front end additional is improved the superconduction chain-circuit system of wireless main website received signal.
In communication system, noise factor is a key index of weighing receiver.At normal temperatures, because the thermal noise that Brownian movement produces and the non-linear back noise of system that makes of low noise amplifier are raised, cause the signal-to-noise ratio degradation of receiver output.Low noise amplifier in the existing receiver at normal temperatures, noise factor is about 0.6dB, this can not satisfy the demand of high performance communication.By studies show that if under the ultralow temperature operational environment, below the 77K temperature, low noise amplifier is not owing to almost have the brownian motion noise coefficient can be reduced to 0.2～0.3dB, thereby effectively amplified useful signal, receiver performance is improved greatly, effectively increase the communication coverage distance, improve communication quality, can be widely used in wireless public network and specific wireless private network.
For high performance low noise amplifier following requirement is arranged: 1, low noise amplifier is to be operated in the Dewar of ultralow temperature and condition of high vacuum degree, in order to guarantee the vacuum degree of Dewar, needs low noise amplifier not discharge pernicious gas; 2, want cube little, the functional reliability height; 3, the characteristics that have high-gain, low-noise factor, good moving standing wave ratio; 4, because the working electromagnet circumstance complication requires the low noise amplifier antistatic effect strong.
The utility model content
The utility model purpose provides under a kind of operational environment that is operated in ultralow temperature, condition of high vacuum degree, have high-gain, low-noise factor, good moving standing wave than, antistatic, and can export the ultralow temperature low noise amplifier of feed.
The utility model provides a kind of ultralow temperature low noise amplifier, and it comprises Low-noise GaAs PHEMT transistor, input matching circuit, output matching circuit, feed circuit, antistatic circuit; Wherein signal input part is electrically connected input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit successively, the described output matching circuit output of the input termination of described feed circuit, the output termination Low-noise GaAs PHEMT transistor of described feed circuit, described input matching circuit and output matching circuit are connected with antistatic circuit respectively.
Further, described input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit, feed circuit, antistatic circuit all are arranged on the gold-plated carrier.
Further, on the described gold-plated carrier ceramic circuit substrate is installed, resistance in described input matching circuit, output matching circuit, feed circuit, the antistatic circuit and inductance element adopt thin-film technique to be integrated on the ceramic circuit substrate, and its capacity cell adopts the mos capacitance chip.
Further, described Low-noise GaAs PHEMT transistor adopts the naked pipe core element, and its exit is by the gold wire bonding place in circuit, and described Low-noise GaAs PHEMT transistor is bonded on the gold-plated carrier.
Further, described antistatic circuit adopts the power supply form of autobias, and the termination over the ground of described antistatic circuit has an inductance.
Further, described feed circuit adopts low pass circuit, and described low pass circuit is made up of the series inductance of a 100nH and the 90pF electric capacity of a ground connection.
Further, described input matching circuit, output matching circuit adopt the dynamic adjustable form, by the connected mode adjustment transmission and the ground connection inductance value ratio of gold wire bonding.
Adopt ultralow temperature low noise amplifier of the present utility model can be exclusively used in the superconduction chain-circuit system, following advantage arranged:
1, can in the Dewar of ultralow temperature and condition of high vacuum degree, work, have the characteristics of high-gain, low-noise factor, good moving standing wave ratio.
2, owing to after output matching circuit, add feed circuit,, reduced the connector of Dewar, guaranteed the high vacuum seal of Dewar so do not need other power line power supply.
3, adopt ceramic circuit substrate and naked pipe core element, and resistance, inductance element adopts thin-film technique to make, reduced the pernicious gas that electric elements discharge, and improved the integrated level of entire circuit, dwindled volume.
4, adopt the antistatic circuit of autobias, this circuit is connected to an inductance over the ground, and the current drain passage can be provided, and has the following antistatic effect of 1000V, the reliability height, and environmental suitability is strong.
Description of drawings
Fig. 1 is the utility model ultralow temperature amplifier circuit in low noise square frame connection diagram.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, the utility model is described in further detail below in conjunction with accompanying drawing.
As shown in Figure 1, the utility model embodiment provides the ultralow temperature low noise amplifier, can work when superconducting temperature 77K, comprising Low-noise GaAs PHEMT transistor, input matching circuit, output matching circuit, feed circuit, antistatic circuit; Wherein signal input part is electrically connected input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit successively, the described output matching circuit output of the input termination of described feed circuit, the output termination Low-noise GaAs PHEMT transistor of described feed circuit, described input matching circuit and output matching circuit are connected with antistatic circuit respectively.
Described input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit, feed circuit, antistatic circuit all are arranged on the gold-plated carrier.On the described gold-plated carrier ceramic circuit substrate is installed, resistance in described input matching circuit, output matching circuit, feed circuit, the antistatic circuit and inductance element adopt thin-film technique to be integrated on the ceramic circuit substrate, its capacity cell adopts the mos capacitance chip, is installed on the gold-plated carrier.
Described Low-noise GaAs PHEMT transistor adopts the naked pipe core element, and its exit is by the gold wire bonding place in circuit, and described Low-noise GaAs PHEMT transistor is bonded on the gold-plated carrier.Adopt gold wire bonding to connect between the chip component of described ultralow temperature low noise amplifier, ceramic circuit substrate and the Low-noise GaAs PHEMT base of transistor exit, signal transmission attenuation is littler like this.
Described antistatic circuit adopts the power supply form of autobias, and the termination over the ground of described antistatic circuit has an inductance, and the current drain passage can be provided, thereby improves antistatic level.Described feed circuit adopts low pass circuit, described low pass circuit is made up of the series inductance of a 100nH and the 90pF electric capacity of a ground connection, when direct current supply is provided, very little to the matching status influence on main transmission road, satisfy the requirement of output standing-wave ratio≤1.2:1.
Described input matching circuit, output matching circuit adopt the dynamic adjustable form, by the connected mode adjustment transmission and the ground connection inductance value ratio of gold wire bonding, thereby reach input and output coupling good under the 77K, the input and output standing-wave ratio of acquisition≤1.2:1.
The typical index of described ultralow temperature low noise amplifier embodiment following (being operated in the 77K temperature):
1. frequency range: 820～840MHz
2. small-signal power gain: 〉=20dB
3. gain flatness: ± 0.2dB in the passband
4. noise factor :≤0.28dB
5. input and output voltage standing-wave ratio :≤1.2:1
6. power supply :+5V electric current :≤22mA
Claims (7)
1. a ultralow temperature low noise amplifier is characterized in that, comprises input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit, feed circuit, antistatic circuit; Wherein signal input part is electrically connected input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit successively, the described output matching circuit output of the input termination of described feed circuit, the output termination Low-noise GaAs PHEMT transistor of described feed circuit, described input matching circuit and output matching circuit are connected with antistatic circuit respectively.
2. according to the described ultralow temperature low noise amplifier of claim 1, it is characterized in that described input matching circuit, Low-noise GaAs PHEMT transistor, output matching circuit, feed circuit, antistatic circuit all are arranged on the gold-plated carrier.
3. according to the described ultralow temperature low noise amplifier of claim 2, it is characterized in that, on the described gold-plated carrier ceramic circuit substrate is installed, resistance in described input matching circuit, output matching circuit, feed circuit, the antistatic circuit and inductance element adopt thin-film technique to be integrated on the ceramic circuit substrate, and its capacity cell adopts the mos capacitance chip.
4. according to claim 1 or 2 described ultralow temperature low noise amplifiers, it is characterized in that, described Low-noise GaAs PHEMT transistor adopts the naked pipe core element, and its exit is by the gold wire bonding place in circuit, and described Low-noise GaAs PHEMT transistor is bonded on the gold-plated carrier.
5. according to the described ultralow temperature low noise amplifier of claim 1, it is characterized in that described antistatic circuit adopts the power supply form of autobias, the termination over the ground of described antistatic circuit has an inductance.
6. according to the described ultralow temperature low noise amplifier of claim 1, it is characterized in that described feed circuit adopts low pass circuit, described low pass circuit is made up of the series inductance of a 100nH and the 90pF electric capacity of a ground connection.
7. according to the described ultralow temperature low noise amplifier of claim 1, it is characterized in that described input matching circuit, output matching circuit adopt the dynamic adjustable form, by the connected mode adjustment transmission and the ground connection inductance value ratio of gold wire bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206456354U CN201869166U (en) | 2010-12-07 | 2010-12-07 | Ultralow-temperature low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206456354U CN201869166U (en) | 2010-12-07 | 2010-12-07 | Ultralow-temperature low-noise amplifier |
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| Publication Number | Publication Date |
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| CN201869166U true CN201869166U (en) | 2011-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010206456354U Expired - Lifetime CN201869166U (en) | 2010-12-07 | 2010-12-07 | Ultralow-temperature low-noise amplifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113288A (en) * | 2013-04-22 | 2014-10-22 | 中国科学技术大学 | Low-temperature low-noise amplifier |
| CN105634416A (en) * | 2015-12-25 | 2016-06-01 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube |
| CN108832903A (en) * | 2018-06-08 | 2018-11-16 | 深圳市华讯方舟微电子科技有限公司 | The low noise amplifier chip and front end amplification module, RF Receiving Device |
-
2010
- 2010-12-07 CN CN2010206456354U patent/CN201869166U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113288A (en) * | 2013-04-22 | 2014-10-22 | 中国科学技术大学 | Low-temperature low-noise amplifier |
| CN105634416A (en) * | 2015-12-25 | 2016-06-01 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube |
| CN108832903A (en) * | 2018-06-08 | 2018-11-16 | 深圳市华讯方舟微电子科技有限公司 | The low noise amplifier chip and front end amplification module, RF Receiving Device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110615 |