CN104868866B - The active quasi- circulator of single-chip integration based on GaN HEMT techniques - Google Patents
The active quasi- circulator of single-chip integration based on GaN HEMT techniques Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 31
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- 229910002601 GaN Inorganic materials 0.000 claims abstract description 136
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 26
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 7
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 21
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Abstract
The invention discloses a kind of active quasi- circulator of the single-chip integration based on GaN HEMT techniques, including the transmitting branch power amplifier, lump type power splitter and receiving branch power amplifier being sequentially connected, three circuits are machined on a monolithic using AlGaN/GaN HEMT techniques；The transmitting branch power amplifier includes the first input matching circuit, the first stabilizing circuit, the first gallium nitride transistor and the first output matching circuit being sequentially connected with since emission port, and the output end of first output matching circuit divides port J with the first work(of lump type power splitter1It is connected；The synthesis port of the lump type power splitter is antenna port, and the structure of receiving branch power amplifier is identical with transmitting branch power amplifier, divides port J with the second work(of lump type power splitter1For input, the output end of receiving branch power amplifier is the receiving port of the active quasi- circulator.The present invention efficiently reduces circuit area, and has larger power capacity, has a extensive future.
Description
Technical field
The invention belongs to microwave monolithic integrated circuit technical field, particularly a kind of monolithic collection based on GaN HEMT techniques
Into active quasi- circulator.
Background technology
Microwave in continuous wave system, in the transmitting-receiving subassembly of millimeter-wave systems, circulator is as a three-port irreversible
Device, an antenna can be made while realize the function of receiving with transmission signal, effectively reduce the area of receive-transmit system.It is passive
Circulator is typically made up of Ferrite Material, has insertion loss is low, power loss is small, stability is high and power capacity is big etc.
Advantage, but its volume is too big, bandwidth relative narrower, and single-chip integration design is difficult to use in, so can not adapt to current
Communication system is integrated, the demand of miniaturization.Then start to occur using bipolar junction transistor (BJT) and high electron mobility crystalline substance
The active circulator of body pipe (HEMT) design, they are except with good performance, and size also very little, so being applicable very much
In system or the integrated technology of module.
In the active circulator based on microwave monolithic integrated circuit (MMIC), CMOS complementary metal-oxide-semiconductor
(CMOS) technique is widely used because of relatively low power attenuation, but such as document 1 (H.S.Wu, C.W.Wang, and
C.K.C.Tzuang,“CMOS active quasi-circulator with dual transmission gains
incorporating feedforward technique at K-band,”IEEE Trans.Microw.Theory
Tech., vol.58, no.8, pp.2084-2091, Aug.2010.) and document 2 (D.Huang, J.Kuo, and H.Wang, " A
24-GHz low power and high isolation active quasi-circulator,”2012IEEE MTT-S
International Microwave Symposium Digest, Montreal, Canada, Jun.2012, pp.1-3.) institute
State, it is universal smaller in the power capacity of 1dB compression points based on the active circulator of CMOS technology, and circulator is generally in power
After amplifier, therefore it in the high-power applications such as T/R modules will be unable to bear the power of power amplifier output.
The content of the invention
It is an object of the invention to provide the monolithic based on GaN HEMT techniques that a kind of circuit area is small, power capacity is big
Integrate active lead ring shape device.
The technical solution for realizing the object of the invention is：A kind of active lead ring of single-chip integration based on GaN HEMT techniques
Shape device, including transmitting branch power amplifier, lump type power splitter and the receiving branch power amplifier being sequentially connected, this three
Circuit is machined on a monolithic using AlGaN/GaN HEMT techniques；
The first input matching circuit that the transmitting branch power amplifier includes being sequentially connected with since emission port, the
One stabilizing circuit, the first gallium nitride transistor GaN HEMT1 and the first output matching circuit：The wherein output of the first stabilizing circuit
End is connected with the first gallium nitride transistor GaN HEMT1 grid, and the first stabilizing circuit and the first gallium nitride transistor GaN
The common port of HEMT1 grids passes through first grid biasing resistor Rgg1With first grid bias input Vgg1It is connected；First nitridation
Gallium transistor GaN HEMT1 source ground；First gallium nitride transistor GaN HEMT1 drain electrode inputs with the first drain bias
Hold Vdd1It is connected, and the first gallium nitride transistor GaN HEMT1 drain electrode and the first drain bias input Vdd1Common port with
The input connection of first output matching circuit；The output end of first output matching circuit and the first of lump type power splitter
Work(divides port J1It is connected；The synthesis port of the lump type power splitter is antenna port；
The structure of the receiving branch power amplifier is identical with transmitting branch power amplifier, from lump type power splitter
Second work(divides port J2Start to include the second input matching circuit, the second stabilizing circuit, the second gallium nitride being sequentially connected with
Pipe GaN HEMT2 and the second output matching circuit：The wherein output end of the second stabilizing circuit and the second gallium nitride transistor GaN
HEMT2 grid connection, and the common port of the second stabilizing circuit and the second gallium nitride transistor GaN HEMT2 grids passes through second
Gate bias resistor Rgg2With second grid bias input Vgg2It is connected；Second gallium nitride transistor GaN HEMT2 source electrode connects
Ground；Second gallium nitride transistor GaN HEMT2 drain electrode and the second drain bias input Vdd2It is connected, and the second gallium nitride is brilliant
Body pipe GaN HEMT2 drain electrode and the second drain bias input Vdd2Common port and the second output matching circuit input
Connection；The output end access receiving port of second output matching circuit.
Compared with prior art, its remarkable advantage is the present invention：(1) advanced AlGaN/GaN HEMT works have been merged
Skill, Wilkinson power divider is designed using lamped element, effectively reduces system area；(2) collection of circuit size is realized
Cheng Hua, it is easy to system or module to design, structure design is simple and easy；(3) power capacity of circuit is bigger, is answered suitable for high-power
With having a extensive future.
Brief description of the drawings
Fig. 1 is the principle schematic of the single-chip integration active quasi- circulator of the invention based on GaN HEMT techniques.
Fig. 2 is the transmission gain test result figure of the active quasi- circulator of single-chip integration of the present invention.
Fig. 3 is the return loss test result figure of the active quasi- circulator of single-chip integration of the present invention.
Fig. 4 is the isolation degree test result figure of the active quasi- circulator of single-chip integration of the present invention.
Fig. 5 is the power measurements figure of the active quasi- circulator of single-chip integration of the present invention.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to the present invention.
With reference to Fig. 1, the single-chip integration active quasi- circulator of the invention based on GaN HEMT techniques, including the hair being sequentially connected
Branch power amplifier 1, lump type power splitter 2 and receiving branch power amplifier 3 are penetrated, three circuits use AlGaN/
GaN HEMT techniques are machined on a monolithic；
The transmitting branch power amplifier 1 since emission port include be sequentially connected with the first input matching circuit 4,
First stabilizing circuit 5, the first gallium nitride transistor GaN HEMT1 and the first output matching circuit 6：Wherein the first stabilizing circuit 5
Output end be connected with the first gallium nitride transistor GaN HEMT1 grid, and the first stabilizing circuit 5 and the first gallium nitride
The common port of pipe GaN HEMT1 grids passes through first grid biasing resistor Rgg1With first grid bias input Vgg1It is connected；The
One gallium nitride transistor GaN HEMT1 source ground；First gallium nitride transistor GaN HEMT1 drain electrode and the first drain electrode are inclined
Press input Vdd1It is connected, and the first gallium nitride transistor GaN HEMT1 drain electrode and the first drain bias input Vdd1Public affairs
End is connected with the input of the first output matching circuit 6 altogether；The output end of first output matching circuit 6 and lump type work(point
First work(of device 2 divides port J1It is connected；The synthesis port of the lump type power splitter 2 is antenna port；
The structure of the receiving branch power amplifier 3 is identical with transmitting branch power amplifier 1, from lump type power splitter
2 the second work(divides port J2Start to include the second input matching circuit 7, the second stabilizing circuit 8, the second gallium nitride being sequentially connected with
Transistor GaN HEMT2 and the second output matching circuit 9：The wherein output end of the second stabilizing circuit 8 and the second gallium nitride
Pipe GaN HEMT2 grid connection, and the common port of the second stabilizing circuit 8 and the second gallium nitride transistor GaN HEMT2 grids
Pass through second grid biasing resistor Rgg2With second grid bias input Vgg2It is connected；Second gallium nitride transistor GaN HEMT2
Source ground；Second gallium nitride transistor GaN HEMT2 drain electrode and the second drain bias input Vdd2It is connected, and second
Gallium nitride transistor GaN HEMT2 drain electrode and the second drain bias input Vdd2Common port and the second output matching circuit 9
Input connection；The output end access receiving port of second output matching circuit 9.
First input matching circuit 4 includes the first inductance L1, the second inductance L2, the first electric capacity C1, wherein the first inductance
L1One end be connected with emission port, the first inductance L1The other end and the second inductance L2One end connection, the second inductance L2It is another
One end is grounded, the first inductance L1With the second inductance L2Common port and the first electric capacity C1One end connection, the first electric capacity C1It is another
End is connected with the input of the first stabilizing circuit 5.
First stabilizing circuit 5 includes first resistor R in parallel1With the second electric capacity C2, first resistor R1With the second electric capacity
C2A common port and the first input matching circuit 4 in the first electric capacity C1Connection, another common port and the first gallium nitride are brilliant
Body pipe GaN HEMT1 grid connection.
First output matching circuit 6 includes the 3rd inductance L3, the 3rd electric capacity C3With the 4th electric capacity C4, wherein the 3rd electricity
Feel L3One end be connected with the first gallium nitride transistor GaN HEMT1 drain electrode, the 3rd inductance L3The other end and the 3rd electric capacity C3
One end be connected, the 3rd electric capacity C3The other end ground connection, the 3rd inductance L3With the 3rd electric capacity C3Common port and the 4th electric capacity C4
One end connection, the 4th electric capacity C4The first work(of the other end and lump type power splitter 2 divide port J1Connection.
The lump type power splitter 2 includes the 4th inductance L4, the 5th inductance L5, the 5th electric capacity C5, the 6th electric capacity C6, the 7th
Electric capacity C7With isolation resistance RPD：Wherein the 5th electric capacity C5One end ground connection, the 5th electric capacity C5The other end and the 4th electric capacity C4I.e.
One work(divides port J1It is connected；5th electric capacity C5With the 4th electric capacity C4Common port respectively with isolation resistance RPDOne end and the 4th
Inductance L4One end be connected；4th inductance L4The other end be connected with antenna port, the 4th inductance L4With the common port of antenna port
Respectively with the 6th electric capacity C6One end and the 5th inductance L5One end connection, the 6th electric capacity C6The other end ground connection, the 5th electricity
Feel L5The other end and isolation resistance RPDThe other end connection, the 5th inductance L5With isolation resistance RPDCommon port be lump type work(
The second work(of device 2 is divided to divide port J2, second work(divides port J2With the 7th electric capacity C7One end be connected, the 7th electric capacity C7It is another
End ground connection.
Second input matching circuit 7 includes the 6th inductance L6, the 7th inductance L7, the 8th electric capacity C8, wherein the 6th inductance
L6The second work(of one end and lump type power splitter 2 divide port J2It is connected, the 6th inductance L6The other end and the 7th inductance L7One
End connection, the 7th inductance L7The other end ground connection, the 6th inductance L6With the 7th inductance L7Common port and the 8th electric capacity C8One end
It is connected, the 8th electric capacity C8The other end be connected with the input of the second stabilizing circuit 8.
Second stabilizing circuit 8 includes second resistance R in parallel2With the 9th electric capacity C9, second resistance R2With the 9th electric capacity
C9A common port and the second input matching circuit 7 in the 8th electric capacity C8Connection, another common port and the second gallium nitride are brilliant
Body pipe GaN HEMT2 grid connection.
Second output matching circuit 9 includes the 8th inductance L8, the tenth electric capacity C10With the 11st electric capacity C11, wherein the 8th
Inductance L8One end be connected with the second gallium nitride transistor GaN HEMT2 drain electrode, the 8th inductance L8The other end and the tenth electric capacity
C10One end be connected, the tenth electric capacity C10The other end ground connection, the 8th inductance L8With the tenth electric capacity C10Common port and the 11st
Electric capacity C11One end connection, the 11st electric capacity C11The other end be receiving port.
The first gallium nitride transistor GaN HEMT1 and the second gallium nitride transistor GaN HEMT2 direct grid current are inclined
Circuits are realization in monolithic, the DC bias circuit that drains is realized by external PCB technology, will be single by gold wire bonding line
Piece is connected with the drain electrode DC bias circuit on PCB, and concrete scheme is to be needed to design phase on PCB according to actual power frequency etc.
The transistor drain biasing circuit answered, and test circuit, the monolithic processed is then pasted onto designed PCB with silver paste
In test circuit, chip is connected with the DC bias circuit on PCB by gold wire bonding line, it is final complete single so as to form
Piece integrates active lead ring row device.
First gallium nitride transistor GaN HEMT1 and the second gallium nitride transistor in the AlGaN/GaN HEMT techniques
A length of 0.15 μm, 0.25 μm or 0.35 μm of GaN HEMT2 grid, or other sizes；Crystalline substance in its intermediate power amplifier
Body pipe overall size is 400 μm, 800 μm, 1000 μm or other sizes, is required according to different working frequencies and power capacity,
The transistor of different grid length and overall dimension can also be selected, and designs corresponding match circuit etc..
Single-chip integration active quasi- circulator of the invention based on GaN HEMT techniques has two paths：One is whole from sending
TX (emission port) is held to arrive antenna terminal ANT (antenna port) transmission path, another is from antenna terminal ANT (antenna ends
Mouthful) arrive receiving terminal RX (receiving port) receiving path.Transmission signal is defeated from the emission port of transmitting branch power amplifier 1
Enter, because the reverse transfer coefficient of the HEMT based on GaN is very small, then the power amplifier based on GaN HEMT may be considered
There is no a reverse transfer, thus whole transmission path may be considered it is nonreciprocal.The signal that antenna receives will be sent to
Receiving branch power amplifier 3, identical with transmission path, receiving path is also nonreciprocal.Due to lack from receiving port to
The transmission channel of emission port, and existing two paths all meet nonreciprocal characteristic, therefore the performance of integrated circuit is realized
The effect of active quasi- circulator.
The lump type power splitter 2 provides necessary isolation for transmission path and receiving path, due to 2.4GHz work
Frequency is relatively low, can take larger area using the microstrip structure of distributed constant, therefore realize using based on GaN MMIC technologies
LC discrete components design the Wilkinson power divider of lump.
The effect of power amplifier is to provide transmission gain for transmission path and receiving path, compared with passive annular device not
Only it is not inserted into loss, also certain gain.But because the isolation of designed power splitter is limited, therefore power amplification
The gain of device can not design too high, and so just can guarantee that has good isolation between transmitting terminal and receiving terminal.Power amplifier and
Designed between power splitter using conjugate impedance match to realize maximum power transfer, the transmission equation expression of transmission path and receiving path
It is as follows：
Wherein, STXFor the signal at active quasi- circulator emission port, SANTFor the letter at active quasi- circulator antenna port
Number, SRXFor the signal at active quasi- circulator receiving port,It is the transmission coefficient of transmitting path,It is signal from transmitting
Port to receiving port leakage coefficient,Represent the transmission coefficient of receiving path.
For silicon substrate GaN MMIC techniques, the Q values of MMIC lumped inductances are typically smaller than 15 in 2.4GHz, if directly in core
Biasing circuit is designed on piece, loss can be larger, therefore in order to reduce DC losses, DC bias circuit is individually set outside piece
Meter.After the active quasi- circulator of the single-chip integration processes, it is pasted onto by silver paste on special PCB test boards, passes through spun gold key
Chip is connected by zygonema with DC bias circuit on PCB, and microwave property is tested by probe platform.
Embodiment 1
The active quasi- circulator of single-chip integration based on GaN HEMT techniques in the present embodiment, overall monolithic integrated circuit size are
2.5mm × 1.5mm, isolation resistance R in lump type power splitter 2PDUsing 100 ohm of film resistor, in lump type power splitter 2
The inductance L of MMIC lumped inductances the 4th4With the 5th inductance L5Size is 4.83nH, the electric capacity C of MMIC lumped capacities the 5th5With the 6th
Electric capacity C6Size is 1.15pF, the 7th electric capacity C7Size is 2.16pF.
GaN HEMT total grid width is 8 × 100 μm in the present embodiment power amplifier, between power amplifier and power splitter
The power transmission of maximum is realized using conjugate impedance match design.In DC bias circuit design aspect, the grid of amplifier it is straight
TFR resistance is used in stream biasing circuit, voltage is directly added in by first grid bias input V by DC probegg1With second
Grid bias input Vgg2On DC feedback point；And for the DC bias circuit of drain electrode, used due to GaN MMIC techniques
The loss of Si dielectric substrates is larger, thus in circuit inductance quality factor it is relatively low (being typically smaller than 15 in 2.4GHz), consider
Inductance element to this low-quality factor can consume many power in DC bias circuit, so with chip integration total inductance simultaneously
Be not suitable for；And if in 2.4GHz, pass through the direct current biasing that quarter-wave transmission line and bypass circuit are formed in monolithic
Circuit, then transmission line is oversize, thus in order to reduce DC losses, and area is saved, determine the DC bias circuit of drain electrode to set
Meter is on PCB.
During test, by gold wire bonding line by the drain electrode and PCB of the active quasi- circulator intermediate power amplifier of single-chip integration
DC bias circuit be connected, active quasi- circulator is tested on probe platform, it is inclined directly in grid with DC probe
Circuits making alive, then rf probe is connected on to 3 ports of active quasi- circulator respectively and tested.
Fig. 2 is transmission gain test result, and the centre frequency of quasi- circulator is in 2.4GHz, emission port to antenna port
Transmission gain is 1.45GHz~2.63GHz, frequency range is 2.3dB~5.3dB, and the transmission of antenna port to receiving port increases
Benefit is 1.85GHz~2.65GHz, frequency range is 0dB~2.9dB.
Fig. 3 return loss test result show quasi- three ports of circulator 2.4GHz return loss be respectively-
31.9dB (emission port), -22.1dB (antenna port) and -14.4dB (receiving port)；Due to designed power splitter every
From spend it is limited, therefore the gain of power amplifier can not design it is too high, so just can guarantee that have between transmitting terminal and receiving terminal it is good
Good isolation.
Fig. 4 is the test result of isolation, and according to the definition of quasi- circulator isolation, in 2.4GHz, S31 is less than
26.0dB, S12, S23 and S13 are both greater than 23.7dB, find out do not have emergent power leakage in the design from test result
Phenomenon.
Fig. 5 is power measurements figure, in 2.4GHz, the input of the 1dB compression points from emission port to antenna port
Power is 14.1dBm, and the input power of the 1dB compression points from antenna port to receiving port is 15.7dBm, 1dB compression points
Power output is all 17.7dBm.
In summary, the active quasi- circulator of single-chip integration proposed by the present invention, first using GaN MMIC technological designs simultaneously
Power amplifier therein is processed, all match circuits all integrate on a single die, and DC bias circuit design is printing
On printed circuit board (PCB), while Wilkinson power divider is designed using MMIC lamped elements, effectively reduces the area of system,
The active quasi- circulator of single-chip integration is constituted, its overall circuit size is 2.5 × 1.5mm2, reliability is high, tests each of gained
Gain and the power output of isolation, return loss, each port between port is good, with the obvious advantage compared with CMOS technology,
Have broad application prospects.
Claims (10)
1. the active quasi- circulator of a kind of single-chip integration based on GaN HEMT techniques, it is characterised in that including the hair being sequentially connected
Branch power amplifier (1), lump type power splitter (2) and receiving branch power amplifier (3) are penetrated, three circuits use
AlGaN/GaN HEMT techniques are machined on a monolithic；
The transmitting branch power amplifier (1) since emission port include be sequentially connected with the first input matching circuit (4),
First stabilizing circuit (5), the first gallium nitride transistor GaN HEMT1 and the first output matching circuit (6)：Wherein first stable electricity
The output end on road (5) is connected with the first gallium nitride transistor GaN HEMT1 grid, and the first stabilizing circuit (5) and the first nitrogen
The common port for changing gallium transistor GaN HEMT1 grids passes through first grid biasing resistor Rgg1With first grid bias input Vgg1
It is connected；First gallium nitride transistor GaN HEMT1 source ground；First gallium nitride transistor GaN HEMT1 drain electrode and the
One drain bias input Vdd1It is connected, and the first gallium nitride transistor GaN HEMT1 drain electrode and the first drain bias input
Vdd1Common port be connected with the input of the first output matching circuit (6)；The output end of first output matching circuit (6)
Divide port J with the first work(of lump type power splitter (2)1It is connected；The synthesis port of the lump type power splitter (2) is antenna end
Mouthful；
The structure of the receiving branch power amplifier (3) is identical with transmitting branch power amplifier (1), from lump type power splitter
(2) the second work(divides port J2The second input matching circuit (7) for starting to include to be sequentially connected with, the second stabilizing circuit (8), second
Gallium nitride transistor GaN HEMT2 and the second output matching circuit (9)：The output end and second of wherein the second stabilizing circuit (8)
Gallium nitride transistor GaN HEMT2 grid connection, and the second stabilizing circuit (8) and the second gallium nitride transistor GaN HEMT2
The common port of grid passes through second grid biasing resistor Rgg2With second grid bias input Vgg2It is connected；Second gallium nitride
Pipe GaN HEMT2 source ground；Second gallium nitride transistor GaN HEMT2 drain electrode and the second drain bias input Vdd2
It is connected, and the second gallium nitride transistor GaN HEMT2 drain electrode and the second drain bias input Vdd2Common port and second defeated
Go out the input connection of match circuit (9)；The output end access receiving port of second output matching circuit (9).
2. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating the first input matching circuit (4) includes the first inductance L1, the second inductance L2, the first electric capacity C1, wherein the first inductance L1One end
It is connected with emission port, the first inductance L1The other end and the second inductance L2One end connection, the second inductance L2Another termination
Ground, the first inductance L1With the second inductance L2Common port and the first electric capacity C1One end connection, the first electric capacity C1The other end and
The input of one stabilizing circuit (5) is connected.
3. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating the first stabilizing circuit (5) includes first resistor R in parallel1With the second electric capacity C2, first resistor R1With the second electric capacity C2One
The first electric capacity C in common port and the first input matching circuit (4)1Connection, another common port and the first gallium nitride transistor
GaN HEMT1 grid connection.
4. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating the first output matching circuit (6) includes the 3rd inductance L3, the 3rd electric capacity C3With the 4th electric capacity C4, wherein the 3rd inductance L3One
End is connected with the first gallium nitride transistor GaN HEMT1 drain electrode, the 3rd inductance L3The other end and the 3rd electric capacity C3One end phase
Connection, the 3rd electric capacity C3The other end ground connection, the 3rd inductance L3With the 3rd electric capacity C3Common port and the 4th electric capacity C4One end connect
Connect, the 4th electric capacity C4The first work(of the other end and lump type power splitter (2) divide port J1Connection.
5. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating lump type power splitter (2) includes the 4th inductance L4, the 5th inductance L5, the 5th electric capacity C5, the 6th electric capacity C6, the 7th electric capacity C7With every
From resistance RPD：Wherein the 5th electric capacity C5One end ground connection, the 5th electric capacity C5The other end and the 4th electric capacity C4I.e. the first work(divides port
J1It is connected；5th electric capacity C5With the 4th electric capacity C4Common port respectively with isolation resistance RPDOne end and the 4th inductance L4One
End is connected；4th inductance L4The other end be connected with antenna port, the 4th inductance L4With the common port of antenna port respectively with the 6th
Electric capacity C6One end and the 5th inductance L5One end connection, the 6th electric capacity C6The other end ground connection, the 5th inductance L5It is another
End and isolation resistance RPDThe other end connection, the 5th inductance L5With isolation resistance RPDCommon port for lump type power splitter (2)
Second work(divides port J2, second work(divides port J2With the 7th electric capacity C7One end be connected, the 7th electric capacity C7The other end ground connection.
6. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating the second input matching circuit (7) includes the 6th inductance L6, the 7th inductance L7, the 8th electric capacity C8, wherein the 6th inductance L6One end
Divide port J with the second work(of lump type power splitter (2)2It is connected, the 6th inductance L6The other end and the 7th inductance L7One end connect
Connect, the 7th inductance L7The other end ground connection, the 6th inductance L6With the 7th inductance L7Common port and the 8th electric capacity C8One end be connected
Connect, the 8th electric capacity C8The other end be connected with the input of the second stabilizing circuit (8).
7. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating the second stabilizing circuit (8) includes second resistance R in parallel2With the 9th electric capacity C9, second resistance R2With the 9th electric capacity C9One
The 8th electric capacity C in common port and the second input matching circuit (7)8Connection, another common port and the second gallium nitride transistor
GaN HEMT2 grid connection.
8. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
Stating the second output matching circuit (9) includes the 8th inductance L8, the tenth electric capacity C10With the 11st electric capacity C11, wherein the 8th inductance L8's
One end is connected with the second gallium nitride transistor GaN HEMT2 drain electrode, the 8th inductance L8The other end and the tenth electric capacity C10One
End is connected, the tenth electric capacity C10The other end ground connection, the 8th inductance L8With the tenth electric capacity C10Common port and the 11st electric capacity C11
One end connection, the 11st electric capacity C11The other end be receiving port.
9. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that institute
The direct grid current biasing circuit for stating the first gallium nitride transistor GaN HEMT1 and the second gallium nitride transistor GaN HEMT2 is
Realization, drain electrode DC bias circuit are realized by external PCB technology in monolithic, by gold wire bonding line by monolithic and PCB
Drain electrode DC bias circuit be connected.
10. the active quasi- circulator of the single-chip integration according to claim 1 based on GaN HEMT techniques, it is characterised in that
First gallium nitride transistor GaN HEMT1 and the second gallium nitride transistor GaN HEMT2 in the AlGaN/GaN HEMT techniques
A length of 0.15 μm, 0.25 μm or 0.35 μm of grid.
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| CN105262449B (en) * | 2015-10-23 | 2018-10-12 | 上海航天测控通信研究所 | A kind of X-band GaN HEMT power device DC bias circuits |
| CN105825005B (en) * | 2016-03-15 | 2019-01-08 | 西安电子科技大学 | The construction method of the non-linear scalable model of GaN high electron mobility transistor |
| CN106067770B (en) * | 2016-07-05 | 2019-02-15 | 成都泰格微电子研究所有限责任公司 | 2.7-3.5GHz 2W GaN mmic power amplifier and design method |
| CN108539340A (en) * | 2018-05-16 | 2018-09-14 | 西安电子科技大学 | A kind of active quasi- circulator of high power utilization ratio |
| CN108933572A (en) * | 2018-07-10 | 2018-12-04 | 苏州远创达科技有限公司 | A kind of radio-frequency power amplifier multi-chip module |
| CN110601661B (en) * | 2019-09-06 | 2023-03-24 | 电子科技大学 | CMOS millimeter wave active quasi-circulator |
| CN111130463B (en) * | 2019-12-10 | 2021-05-28 | 西安交通大学 | Low-noise-coefficient, broadband and high-isolation active quasi-circulator based on double cancellation |
| CN111510108B (en) * | 2020-05-13 | 2023-08-01 | 电子科技大学 | Quasi-circulator with broadband low noise and high power margin |
| CN112821871A (en) * | 2020-12-28 | 2021-05-18 | 西安电子科技大学 | Doherty power amplifier chip based on current multiplexing drive circuit |
| CN114039179B (en) * | 2021-09-29 | 2022-05-27 | 电子科技大学长三角研究院(湖州) | Terahertz active quasi-circulator based on CMOS (complementary Metal oxide semiconductor) process |
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