CN105576094A - LED epitaxial wafer processing technology - Google Patents
LED epitaxial wafer processing technology Download PDFInfo
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- CN105576094A CN105576094A CN201410550913.0A CN201410550913A CN105576094A CN 105576094 A CN105576094 A CN 105576094A CN 201410550913 A CN201410550913 A CN 201410550913A CN 105576094 A CN105576094 A CN 105576094A
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Abstract
The invention discloses an LED epitaxial wafer processing technology. The technology comprises the following steps of fixing: fixing a monocrystal silicon rod on a processing bench; slicing: slicing the monocrystal silicon rod into thin silicon wafers; annealing: after a double-station thermal oxidation furnace is blown by nitrogen, using infrared to heat the furnace to 400-550 DEG C, and carrying out reaction on a silicon wafer surface and oxygen so that a silicon dioxide protection layer is formed on the silicon wafer surface; chamfering: finishing the annealed silicon wafer so that the annealed silicon wafer is in an arc shape; carrying out sub-file detection; grinding: using a grinding slice agent to remove kerf and a surface damage layer caused by slicing and grinding; cleaning: through an organic solvent and combining a supersonic wave cleaning technology, removing organic impurities on the silicon wafer surface; and carrying out RCA cleaning: through multiple times of cleaning, removing particle substances and metal ions on the silicon wafer surface. By using the technology, processes are simple, a requirement to equipment is low and an imperfect rate of the produced LED epitaxial wafer is low.
Description
Technical field
The present invention relates to LED processing technique field, particularly relate to a kind of LED processing technology.
Background technology
The general principle of LED growth is: be heated on the substrate base of proper temperature at one piece, and what gaseous material InGaAlP had control is transported to substrate surface, grows specific monocrystal thin films.Current LED growing technology mainly adopts Metalorganic chemical vapor deposition method.LED backing material is the foundation stone of semiconductor lighting industrial technology development.Different backing materials, need different LED growing technologies, chip manufacture technology and device packaging technique, backing material determines the development course of semiconductor illumination technique.But traditional LED machining process is complicated, and cost is higher, and inferior rate is higher.
Summary of the invention
The object of the invention is to, by a kind of LED processing technology, solve the problem that above background technology part is mentioned.
For reaching this object, the present invention by the following technical solutions:
A kind of LED processing technology, it comprises the steps:
S101, fixing: silicon single crystal rod to be fixed in machine table;
S102, section: silicon single crystal rod is cut into thin silicon wafer;
S103, annealing: double-station hot oxidation furnace is after nitrogen purges, and with infrared heating to 400-550 DEG C, silicon chip surface and oxygen react, make silicon chip surface form silicon dioxide layer of protection;
S104, chamfering: the silicon chip of annealing is carried out being trimmed to circular arc;
S105, stepping detect;
S106, grinding: the kerf made with abrasive disc agent removing section and disc sharpener and surface damage layer;
S107, cleaning: by organic solvent, and the organic impurities removing silicon chip surface in conjunction with ultrasonic cleaning technology;
S108, RCA clean: particulate matter and the metal ion of being removed silicon chip surface by multiple tracks cleaning.
The LED processing technology that the present invention proposes not only operation is simple, low for equipment requirements, and the inferior rate of the LED produced is lower.
Accompanying drawing explanation
The LED processing process figure that Fig. 1 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Please refer to shown in Fig. 1, the LED processing process figure that Fig. 1 provides for the embodiment of the present invention.
In the present embodiment, LED processing technology specifically comprises the steps:
S101, fixing: silicon single crystal rod is fixed in machine table.
S102, section: silicon single crystal rod is cut into the thin silicon wafer with precise geometrical size.The silica flour produced in this process adopts water to drench, and produces waste water and white residue.
S103, annealing: double-station hot oxidation furnace is after nitrogen purges, and with infrared heating to 400-550 DEG C, silicon chip surface and oxygen react, make silicon chip surface form silicon dioxide layer of protection.
S104, chamfering: carried out being trimmed to circular arc by the silicon chip of annealing, prevent silicon chip edge from breaking and lattice defect produces, and increases the flatness of epitaxial layer and photoresist layer.The silica flour produced in this process adopts water to drench, and produces waste water and white residue.
S105, stepping detect: for ensureing specification and the quality of silicon chip, detect it.Waste product can be produced herein.
S106, grinding: the kerf made with abrasive disc agent removing section and disc sharpener and surface damage layer, effectively improve the curvature of monocrystalline silicon piece, flatness and the depth of parallelism, reach a manageable specification of polishing process.This process produces useless abrasive disc agent.
S107, cleaning: by the dissolution of organic solvent, remove the organic impurities of silicon chip surface in conjunction with ultrasonic cleaning technology.This operation produces organic exhaust gas and spent organic solvent.
S108, RCA clean: particulate matter and the metal ion of being removed silicon chip surface by multiple tracks cleaning.
Technical scheme of the present invention not only operation is simple, low for equipment requirements, and the inferior rate of the LED produced is lower.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (1)
1. a LED processing technology, is characterized in that, comprises the steps:
S101, fixing: silicon single crystal rod to be fixed in machine table;
S102, section: silicon single crystal rod is cut into thin silicon wafer;
S103, annealing: double-station hot oxidation furnace is after nitrogen purges, and with infrared heating to 400-550 DEG C, silicon chip surface and oxygen react, make silicon chip surface form silicon dioxide layer of protection;
S104, chamfering: the silicon chip of annealing is carried out being trimmed to circular arc;
S105, stepping detect;
S106, grinding: the kerf made with abrasive disc agent removing section and disc sharpener and surface damage layer;
S107, cleaning: by organic solvent, and the organic impurities removing silicon chip surface in conjunction with ultrasonic cleaning technology;
S108, RCA clean: particulate matter and the metal ion of being removed silicon chip surface by multiple tracks cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410550913.0A CN105576094A (en) | 2014-10-16 | 2014-10-16 | LED epitaxial wafer processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410550913.0A CN105576094A (en) | 2014-10-16 | 2014-10-16 | LED epitaxial wafer processing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105576094A true CN105576094A (en) | 2016-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410550913.0A Pending CN105576094A (en) | 2014-10-16 | 2014-10-16 | LED epitaxial wafer processing technology |
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| CN (1) | CN105576094A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068816A (en) * | 2017-04-17 | 2017-08-18 | 安徽路明光电科技有限公司 | A kind of manufacture craft of LED silicon wafer circuitry plate |
| CN108511570A (en) * | 2018-04-19 | 2018-09-07 | 如皋市大昌电子有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109285762A (en) * | 2018-09-29 | 2019-01-29 | 中国电子科技集团公司第四十六研究所 | A kind of epitaxy of gallium nitride silicon chip edge processing technology |
| CN112059736A (en) * | 2020-09-08 | 2020-12-11 | 有研半导体材料有限公司 | Silicon wafer manufacturing process |
-
2014
- 2014-10-16 CN CN201410550913.0A patent/CN105576094A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068816A (en) * | 2017-04-17 | 2017-08-18 | 安徽路明光电科技有限公司 | A kind of manufacture craft of LED silicon wafer circuitry plate |
| CN108511570A (en) * | 2018-04-19 | 2018-09-07 | 如皋市大昌电子有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109285762A (en) * | 2018-09-29 | 2019-01-29 | 中国电子科技集团公司第四十六研究所 | A kind of epitaxy of gallium nitride silicon chip edge processing technology |
| CN109285762B (en) * | 2018-09-29 | 2021-05-04 | 中国电子科技集团公司第四十六研究所 | Edge processing technology for silicon wafer for gallium nitride epitaxy |
| CN112059736A (en) * | 2020-09-08 | 2020-12-11 | 有研半导体材料有限公司 | Silicon wafer manufacturing process |
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Application publication date: 20160511 |