JP5841588B2 - 改良型多接合led - Google Patents
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- 239000000758 substrate Substances 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000000903 blocking effect Effects 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 16
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- 230000007704 transition Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 description 9
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- 229910052594 sapphire Inorganic materials 0.000 description 7
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- 230000007423 decrease Effects 0.000 description 6
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- 238000000034 method Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Description
Claims (10)
- 基板と、
前記基板上に堆積された第1導電型半導体層、第2導電型半導体層、発光層、および、透明電極を含み、前記発光層は、前記第1導電型半導体層と前記第2導電型半導体層との間に位置し、前記第2導電型半導体層は、前記発光層と前記透明電極との間に位置する発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントの前記第1導電型半導体層と前記第2セグメントの前記透明電極とを接続する直列接続電極と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードと、
を含む光源であって、
前記基板は、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、
前記障壁は、前記発光構造、前記第1阻止ダイオード及び前記第2阻止ダイオードを貫通して延び、前記遷移層内にその終端があるトレンチを含み、前記遷移層内を移動する光を実質的に遮断せず、
前記直列接続電極は、前記障壁を跨ぐ複数の導体であって、前記トレンチ内に堆積され、前記第2セグメントの発光構造の上方に延在した導電材料の層を含み、
前記導電材料の層が、前記トレンチ内に露出される前記発光構造の壁面と接触することを防止する絶縁層であって、前記障壁に面する前記発光構造の側面をその形状に沿って覆うとともに、前記第2セグメントの発光構造の上方に位置する前記導電材料の層と前記第2導電型半導体層との間に延在し、前記第1セグメントの前記第1導電型半導体層上に、前記直列接続電極を前記第1セグメントの前記第1導電型半導体層に接続するための開口部を有し、
前記透明電極は、前記第2導電型半導体層と前記絶縁層との間には延在せず、
前記半導体材料がGaN材料族からなる材料を含む、
光源。 - 基板と、
前記基板上に堆積された第1導電型半導体層、第2導電型半導体層、発光層、および、透明電極を含み、前記発光層は、前記第1導電型半導体層と前記第2導電型半導体層との間に位置し、前記第2導電型半導体層は、前記発光層と前記透明電極との間に位置する発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントの前記第1導電型半導体層に接続され、前記第2セグメントの前記透明電極上に延在する直列接続電極と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
を含む光源であって、
前記障壁が、前記発光構造を貫通して前記第1阻止ダイオードの中に延び、
前記直列接続電極は、前記第2セグメントの発光構造の上方に延在した導電材料の層を含み、
前記導電材料の層と前記第2セグメントの発光構造の側面との間に形成された絶縁層であって、前記障壁に面する前記発光構造の側面をその形状に沿って覆うとともに、前記第2セグメントの発光構造の上方に位置する前記導電材料の層と前記第2導電型半導体層との間に延在し、前記第1セグメントの前記第1導電型半導体層上に、前記直列接続電極を前記第1セグメントの前記第1導電型半導体層に接続するための開口部を有し、
前記透明電極は、前記第2導電型半導体層と前記絶縁層との間には延在しない、
光源。 - 前記基板が、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、
前記障壁が、前記発光構造及び前記第1阻止ダイオードを貫通して延びるトレンチであって前記遷移層内にその終端があるトレンチを含む、請求項2に記載の光源。 - 前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードをさらに含む、請求項2または3に記載の光源。
- 前記第1阻止ダイオードと前記遷移層との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードをさらに含む、請求項3に記載の光源。
- 基板と、
前記基板上に堆積された第1導電型半導体層、第2導電型半導体層、発光層、および、透明電極を含み、前記発光層は、前記第1導電型半導体層と前記第2導電型半導体層との間に位置し、前記第2導電型半導体層は、前記発光層と前記透明電極との間に位置する発光構造と、
前記発光構造を第1および第2セグメントに分割する障壁と、
前記第1セグメントの前記第1導電型半導体層に接続され、前記第2セグメントの前記透明電極上に延在する直列接続電極と、
前記直列接続電極と前記第2セグメントの発光構造の側面との間に形成された絶縁層であって、前記第2セグメントの発光構造の上方に位置する前記直列接続電極と前記第2導電型半導体層との間に延在する絶縁層と、
前記発光構造と前記基板との間の第1阻止ダイオードであり、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第1阻止ダイオードと、
前記第1阻止ダイオードと前記基板との間の第2阻止ダイオードであって、前記発光構造が光を放射している時に、前記発光構造と前記基板との間に電流が流れるのを防止する第2阻止ダイオードと、
を含む光源であって、
前記基板は、前記発光構造により発生する光に対して透明な半導体材料の遷移層を含み、
前記障壁が、前記発光構造及び前記第1阻止ダイオードを貫通して延びるトレンチであって前記遷移層内にその終端があるトレンチを含み、
前記透明電極は、前記第2導電型半導体層と前記絶縁層との間には延在しない、
光源。 - 前記直列接続電極が、前記障壁を跨ぐ複数の導体を含む、請求項2〜6のいずれか1つに記載の光源。
- 前記障壁が、前記遷移層内を移動する光を実質的に遮断しない、請求項3〜7のいずれか1つに記載の光源。
- 前記導電材料の層は、前記トレンチ内に堆積されている、請求項3〜8のいずれか1つに記載の光源。
- 前記半導体材料がGaN材料族からなる材料を含む、請求項3〜9のいずれか1つに記載の光源。
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US12/725,424 | 2010-03-16 | ||
US12/725,424 US8084775B2 (en) | 2010-03-16 | 2010-03-16 | Light sources with serially connected LED segments including current blocking diodes |
PCT/US2010/062086 WO2011115654A2 (en) | 2010-03-16 | 2010-12-23 | Improved multi-junction led |
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JP2013522905A JP2013522905A (ja) | 2013-06-13 |
JP2013522905A5 JP2013522905A5 (ja) | 2013-11-28 |
JP5841588B2 true JP5841588B2 (ja) | 2016-01-13 |
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US (2) | US8084775B2 (ja) |
EP (1) | EP2548234A4 (ja) |
JP (1) | JP5841588B2 (ja) |
KR (1) | KR20130036191A (ja) |
CN (1) | CN102770976B (ja) |
TW (1) | TWI515919B (ja) |
WO (1) | WO2011115654A2 (ja) |
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KR20160016361A (ko) * | 2014-08-05 | 2016-02-15 | 서울바이오시스 주식회사 | 발광 다이오드 및 그 제조 방법 |
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KR100765240B1 (ko) * | 2006-09-30 | 2007-10-09 | 서울옵토디바이스주식회사 | 서로 다른 크기의 발광셀을 가지는 발광 다이오드 패키지및 이를 채용한 발광 소자 |
KR100974923B1 (ko) * | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
CN101270915B (zh) * | 2008-04-18 | 2013-02-13 | 周万杰 | 具有下旋式燃烧室的组合式燃浆锅炉 |
TW201011890A (en) * | 2008-09-04 | 2010-03-16 | Formosa Epitaxy Inc | Alternating current light emitting device |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
-
2010
- 2010-03-16 US US12/725,424 patent/US8084775B2/en not_active Expired - Fee Related
- 2010-12-23 KR KR1020127023555A patent/KR20130036191A/ko active IP Right Grant
- 2010-12-23 CN CN201080064139.2A patent/CN102770976B/zh not_active Expired - Fee Related
- 2010-12-23 EP EP10848128.4A patent/EP2548234A4/en not_active Withdrawn
- 2010-12-23 WO PCT/US2010/062086 patent/WO2011115654A2/en active Application Filing
- 2010-12-23 JP JP2013500040A patent/JP5841588B2/ja not_active Expired - Fee Related
- 2010-12-30 TW TW099146849A patent/TWI515919B/zh not_active IP Right Cessation
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2011
- 2011-11-11 US US13/294,984 patent/US20120058584A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US8084775B2 (en) | 2011-12-27 |
EP2548234A4 (en) | 2016-01-20 |
WO2011115654A3 (en) | 2012-01-26 |
US20100219431A1 (en) | 2010-09-02 |
CN102770976A (zh) | 2012-11-07 |
WO2011115654A2 (en) | 2011-09-22 |
CN102770976B (zh) | 2015-10-07 |
TWI515919B (zh) | 2016-01-01 |
US20120058584A1 (en) | 2012-03-08 |
TW201133930A (en) | 2011-10-01 |
JP2013522905A (ja) | 2013-06-13 |
KR20130036191A (ko) | 2013-04-11 |
EP2548234A2 (en) | 2013-01-23 |
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