CN105553235B - Semiconductor drive device and the power-converting device using the semiconductor drive device - Google Patents
Semiconductor drive device and the power-converting device using the semiconductor drive device Download PDFInfo
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- CN105553235B CN105553235B CN201510644671.6A CN201510644671A CN105553235B CN 105553235 B CN105553235 B CN 105553235B CN 201510644671 A CN201510644671 A CN 201510644671A CN 105553235 B CN105553235 B CN 105553235B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
Abstract
The present invention provides semiconductor drive device and the power-converting device using the semiconductor drive device.Following method is provided：The action current (Icl) for the voltage clamp circuit for undertaking overvoltage protection is reduced in the drive device of thyristor, and then suppresses the increase of the cut-out loss of the switch element associated with the action of voltage clamp circuit.In the semiconductor drive device of the ON/OFF state of control thyristor, possess：The control signal output-stage circuit of control signal is passed on to the gate control terminal of switch element；The voltage clamp circuit being connected between the input terminal of switch element and gate control terminal；The detection circuit of voltage or gate control terminal electric current between the lead-out terminal and gate control terminal of detection switch element, control signal output-stage circuit reduce the impedance of the output stage of control signal output-stage circuit in the disengagement phase of thyristor based on the testing result of detection circuit.
Description
Technical field
Filled the present invention relates to the semiconductor drive device for being equipped with over-voltage protection function and using semiconductor driving
The power-converting device put.
Background technology
Power-converting device headed by inverter realizes power converter by the switch motion of thyristor.Make
For the typical example of the thyristor, the voltage-driven semiconductor device headed by MOS-FET, IGBT is widely used.
The IGBT for switching and big electric power being controlled of high speed can particularly be carried out in use etc. from the low capacity inverter of household electrical appliances to railway
Large Copacity inverter wide spectrum use.
Semiconductor drive device is needed in order to control such thyristor.Typically, voltage driven type is partly led
The drive device of body has by applying voltage to the grid of thyristor come the function of the conducting state of control element.
In addition, semiconductor drive device typically has the function for the overvoltage for preventing driven thyristor.
Figure 10 is the conventional example of the drive device for the IGBT module being made up of IGBT and diode.Based on signal pair
IGBT1 grid G applies suitable voltage, and the collector current Ic turned on the colelctor electrode P- emitter stages N for making IGBT1 is carried out
Control.
Here, resistance 6 and 7 flows through the electric current Irg of grid G to adjust between grid G and emitter E by limitation
Voltage Vge rate of change.Thus, IGBT1 switching speed, i.e. collector current Ic rate of change and collection can suitably be provided
The rate of change of voltage Vce between electrode C and emitter E.
Function is prevented as overvoltage, it is widely used to connect constant voltage diode between IGBT1 colelctor electrode C and grid G
Deng voltage clamping element 3 mode.In this approach, collector voltage becomes situation too much in IGBT1 cut-out etc.
Under, electric current is flowed through in grid because constant voltage diode punctures, is clamped collector voltage by turning on making IGBT transition
Position is constant.In addition, in order to prevent the overvoltage of IGBT1 grid, typically possesses overvoltage protection two between gate-emitter
Pole pipe 9.
Collector current Ic, colelctor electrode-transmitting interpolar electricity in the cut-out of the IGBT during Figure 11 shows Figure 10 composition
Press the exemplary waveforms of voltage Vge between Vce, grid current Irg and gate-emitter.In IGBT colelctor electrode-transmitting interpolar electricity
In pressing during Vce and collector current Ic progress transition, cut-out loss is produced in IGBT.In addition, in the transition period,
It is known to occur in grid voltage waveform referred to as the step during mirror image.
Figure 12 represents that IGBT colelctor electrode surge voltage becomes situation too much, that voltage clamping element 3 carries out clamper action
Under each electric current and voltage exemplary waveforms.During colelctor electrode-transmitting interpolar produces overvoltage, with colelctor electrode-grid
The voltage clamping element 3 of interpolar connection punctures and flows through electric current Icl in clamp circuit, and grid voltage rises on state threshold voltage
More than Vth and IGBT are turned on, to prevent the overvoltage of colelctor electrode-transmitting interpolar.On the other hand, due to being cut off because of voltage clamping
It is elongated during action, therefore cut-out loss occur and become big such side effect.
Here, when the shut-off grid voltage of semiconductor drive device to be set to Vm, shut-off resistance is set into Rg1,
Clamp circuit electric current Icl needs to meet following relations.
Icl >=(Vth-Vm)/Rg1... (formula 1)
Therefore, make shut-off resistance Rg1 is larger to help to reduce clamp current Icl, therefore be favorably improved clamper effect
Fruit.On the other hand, the further increase that cut-out can be caused to be lost.
Citation
Patent document
Patent document 1：TOHKEMY 2005-328668 publications
Patent document 2：TOHKEMY 2013-126278 publications
It is given in showing during switch motion as the other method for improving clamping effect in patent document 1
The method that the output voltage of gate driving circuit is maintained at the positive voltage less than threshold voltage vt h by period.So by grid electricity
Pressure is maintained in the method for positive voltage, between the positive-negative power due to connecting drive circuit with resistance, therefore in order to prevent resistance
Surplus is generated heat and needs to keep voltage with high impedance.Therefore, the potential change in the case where grid is mixed into noise becomes big, occur
Grid misleads and produces the risk of unnecessary loss.And then in the method, although being previously determined described in holding just
Feedforward control during voltage, but due to during required clamper Tcl (with reference to figure 12) according to the shape Condition of the surge of generation
It is different and change, it is therefore desirable to ensure enough surplus capacities come Tcl during setting clamper.Thus, the surplus that can cause cut-out is prolonged
Late, the problem of bringing loss to increase.
On the other hand, it is shown below method in patent document 2：In the case where clamp circuit is acted, by making
The shut-off resistance of the output-stage circuit in next cycle is larger to make switch motion slower, suppresses surge voltage.In such method
In, by detecting the feedback control of action of clamp circuit cut-out damage during optimizing and making shut-off resistance larger, can be suppressed
The superfluous increase of consumption.But in the method, it is necessary to draw feedback wiring from clamp circuit to output-stage circuit.Therefore, not only
Cloth line number required when connection is connected up between semiconductor drive device and IGBT is increased, can also be made an uproar because being superimposed in winding wiring
Sound and malfunction output-stage circuit, the problem of worrying increase, arm short circuit etc. for causing cut-out to be lost.
The content of the invention
In order to solve described problem, semiconductor drive device involved in the present invention control thyristor is led
Logical/off state, the semiconductor drive device possess：The control of control signal is transmitted to the gate control terminal of switch element
Signal output level circuit；The voltage clamp circuit being connected between the input terminal of switch element and gate control terminal；And detection
The detection circuit of voltage or gate control terminal electric current between the lead-out terminal and gate control terminal of switch element, control signal
Output-stage circuit testing result based on detection circuit in the disengagement phase of thyristor is defeated to reduce control signal
Go out the impedance of the output stage of grade circuit.
It in addition, as the thyristor in the present invention, can apply in IGBT or MOSFET etc. element, input
Terminal is corresponding with the drain terminal in the collector terminal and MOSFET in IGBT respectively, lead-out terminal respectively with IGBT
Source terminal in emitter terminal and MOSFET is corresponding.
The effect of invention
According to the present invention, by with the timing of the impedance of the voltage of control terminal or gallon control switching circuit, reality
Show during being acted with clamper that Tcl is corresponding controls, suppressed so as to which the increase of loss will be cut off in Min., and inhibit
From the length of signal wire of the sensing point of voltage or electric current untill impedance switching part, made an uproar so as to suppress to be superimposed in signal wire
Sound.
Brief description of the drawings
Fig. 1 is the block diagram for the basic composition for representing the semiconductor drive device involved by embodiments of the invention 1.
Fig. 2 is the 1st action exemplary waveforms figure of the semiconductor drive device involved by embodiments of the invention 1.
Fig. 3 is the 2nd action exemplary waveforms figure of the semiconductor drive device involved by embodiments of the invention 1.
Fig. 4 is the concrete example for the output-stage circuit for representing the semiconductor drive device involved by embodiments of the invention 1
Block diagram.
Fig. 5 is the 1st specific of the voltage clamp circuit for representing the semiconductor drive device involved by embodiments of the invention 1
The block diagram of example.
Fig. 6 is the 2nd specific of the voltage clamp circuit for representing the semiconductor drive device involved by embodiments of the invention 1
The block diagram of example.
Fig. 7 is the 3rd specific of the voltage clamp circuit for representing the semiconductor drive device involved by embodiments of the invention 1
The block diagram of example.
Fig. 8 is the block diagram for the basic composition for representing the semiconductor drive device involved by embodiments of the invention 2.
Fig. 9 is the block diagram for the basic composition for representing the power-converting device involved by embodiments of the invention 3.
Figure 10 is the block diagram of the existing composition for the semiconductor drive circuit for representing to have active clamp function.
Figure 11 is the cut-out exemplary waveforms figure of the thyristor in existing composition, and it is small to particularly show surge voltage
Situation.
Figure 12 is the cut-out exemplary waveforms figure of the thyristor in existing composition, is particularly shown due to surge voltage
The situation that larger and semiconductor drive device active clamp function is acted.
The explanation of label
T1, T2 grid output-stage circuit
Rg1~Rg3 resistances
Cg1 speed-up capacitor devices
Irg resistance conducting electric currents
Dz1~Dz8 voltage clamping elements
Vge gate-emitter voltages
Vth threshold voltage of the grid
Qg gate charges
Ic collector currents
Vce collector emitter voltages
Vcl colelctor electrode clamp voltages
The electric current of Icl voltage clamp circuits
During Tcl voltage clampings
SIN driving instruction input signals
SF grids judge signal
Z1~Z3 output-stage circuit impedances
Mz1 clamp circuit switching mosfets
Dzg1 clamp circuit gate protection elements
Dzg2 clamp circuit commutation diodes
Czg1 clamp circuit grid input capacitances
Rz1~Rz3 clamp circuit resistance
Cz1 clamp circuit series capacitors
Vdc main circuit power voltages
Vp semiconductor drive device positive voltages
Vm semiconductor drive device negative supply voltages
Le module stray inductances
C IGBT colelctor electrode main terminals
E IGBT emitter stage main terminals
G IGBT gate control terminals
Ca IGBT colelctor electrode sense terminals
Ea IGBT emitter stage control terminals
Gd semiconductor drive device gate control terminals
Ed semiconductor drive device emitter stage control terminals
600 power-converting devices
Q0, Q11~Q16 thyristors
D0, D11~D16 rectifier cells
GD11~GD16 semiconductor drive devices
AC11~AC16 voltage clamp circuits
M1 motor
L1 higher level's logic section
Embodiment
Illustrate embodiment 1~3 successively as the form for implementing the present invention, refer to the attached drawing below.In addition, following be used as partly is led
Body illustrates by taking IGBT as an example, but is not limited to this, moreover it is possible to is used in the drive device of other in general semiconductors.
Embodiment 1
[composition of semiconductor drive device]
Fig. 1 is the block diagram for the basic composition for representing the semiconductor drive device involved by embodiments of the invention 1.In this reality
Apply in example, it is assumed that with multiple twin wiring etc. respectively by IGBT gate control terminal G and semiconductor drive device grid control terminal
The feelings connected between sub- Gd and between the emitter stage control terminal Ed of IGBT emitter stage control terminal Ea and semiconductor drive device
Condition.In IGBT module side, voltage clamp circuit is connected between colelctor electrode sense terminal Ca and gate terminal G, prevents IGBT elements
Overvoltage.In addition, the pole of snowslide two of IGBT gate control terminal G and emitter stage control terminal Ea via constant voltage diode
Pipe Dz1, Dz2 and connect.Avalanche diode Dz1, Dz2 are in the case where grid voltage exceedes given voltage from gate control terminal
Make current lead-through to emitter stage control terminal so that will not be because of the voltage that is exported from semiconductor drive device and from voltage clamping
The voltage of circuit output and more than thyristor grid proof voltage.Semiconductor drive device connects according to from instruction department
The driving instruction SIN being subject to, by making the output-stage circuit of impedance variable apply voltage to IGBT grid.It is here, defeated as making
Go out the method for the impedance variations of grade circuit, in the present embodiment, the voltage detecting electricity based on the voltage between monitoring gate-emitter
The testing result on road controls impedance.
[action of semiconductor drive device]
Fig. 2 is the action exemplary waveforms of the semiconductor drive device involved by the 1st action example of embodiments of the invention 1
Figure.Receive the driving instruction SIN of gate turn-off and make gate-emitter voltage Vge reduce when, collector voltage Vce is opened
Begin to increase (t1).Afterwards, when high current blocks etc. collector voltage further increase and colelctor electrode-grid voltage across poles reaches electricity
When pressing the operation voltage rank of clamp circuit (t2), electric current flows via voltage clamp circuit from the lateral gate electrode side of colelctor electrode.By
This, grid voltage rises to more than threshold voltage of the grid Vth, IGBT conducting and by collector voltage clamper in constant voltage Vcl.
Here, due to the impedance of output-stage circuit to be redefined for big value Z1, therefore can be by order to meet the clamper of formula 1 and needs
Electric current suppresses smaller.
Afterwards, when surge relaxes (t3), clamp current is reduced so as to which grid voltage reduces.Detected in voltage detecting circuit
To terminate during mirror image and in the case that voltage is reduced to below assigned voltage value between gate-emitter (t4 in Fig. 4), voltage inspection
Slowdown monitoring circuit generation grid judges signal SF and is sent to control signal output-stage circuit.Signal SF, output are judged based on the grid
Level circuit makes grid output impedance be reduced to Z2, accelerates cutoff action.Here, assigned voltage value is set as terminating during mirror image
When gate-emitter between voltage.
Fig. 3 is the action exemplary waveforms of the semiconductor drive device involved by the 2nd action example of embodiments of the invention 1
Figure.Compared with Fig. 2, difference is：It is less than the impedance Z 3 of grid output stage before the t1 that grid voltage Vge starts to reduce
Impedance Z 1 in during clamper.That is, impedance is increased from Z3 to Z4 in above-mentioned t1 timing, make resistance in above-mentioned t4 timing
It is anti-to be reduced from Z4 to Z5.Make the timing that impedance reduces due to similarly be realized in above-mentioned voltage detecting circuit, therefore omit
Detailed description.Here, Z3 is set greater than Z5 and is less than Z4 value.
In addition, in the example of fig. 3, linearly 3~Z5 of impedance Z of 3 values of switching example is shown, it is apparent that can answer
In more Multistage Controls, nonlinear Control, low current control etc..It is specific in the case of as progress Multistage Control
Example, voltage detecting circuit possesses multiple assigned voltage values, whenever the voltage detecting value between emitter terminal and gate control terminal
Vge turns into below each given voltage value, just repeatedly exports grid judgement signal to control signal output-stage circuit, control signal
Output-stage circuit judges signal come multiple switch-over control signal output-stage circuit based on the grid repeatedly received from detection circuit
Output stage impedance, so as to little by little reducing impedance.
[effect of embodiment 1]
Semiconductor drive device provided by the present invention is higher because output stage impedance setting when can clamper be acted obtains,
Therefore when clamper acts, grid voltage rises at once.Thus, the overvoltage protection that undertakes semiconductor drive device can be reduced
The electric current Icl of voltage clamp circuit, because the miniaturization of circuit can be realized with small-sized clamp members.Further, since pass through
Rising of the clamper function come the collector voltage in during suppressing clamper is improved, therefore the setting value of clamp voltage can be made higher,
Thus reduce the frequency that active clamp action occurs and reduce the self-heating of switch element.
And then due to determining for the output stage impedance of reduction semiconductor drive device can be made based on the result of detection of grid voltage
Tcl during Shi Shunying clampers act, therefore the increase for cutting off loss can be suppressed to Min..Prior art is to cause cut-out
The increased feedforward control (patent document 1) of loss, the feedback control (patent document 2) for needing unnecessary detectable signal line, with
This is relative, the present invention using using by the existing grid wiring connected between IGBT module and semiconductor drive device come indirectly
The quasi- feedback control of the action of detecting voltage clamp circuit, it can be detected indirectly in the position closer to semiconductor drive device
The action of voltage clamp circuit, therefore compared with described prior art, the length of detectable signal line can be shortened, so as to enter
Row is difficult to the stability contorting of the influence by noise.
<The concrete example of the output-stage circuit of embodiment 1>
The concrete example of output-stage circuit in embodiment 1 is shown with reference to figure 4.Output-stage circuit by 2 output stage T1 and
T2,3 resistance Rg1 and Rg2 and Rg3, speed-up capacitor device Cg1 and signal SF switching output resistance is judged based on grid
Resistance switch control portion form.
Output stage T1 exports any of high side voltage Vp and low-pressure side voltage Vm based on the driving instruction SIN received
Person.Output stage T1 outlet side is connected via the resistance Rg1 and resistance Rg2 that are connected in series with gate control terminal Gd.In resistance
Rg1 is connected in parallel speed-up capacitor device Cg1.In addition, resistance is cut judges that signal SF is defeated to make for control unit based on the grid received
Go out a grade T2 actions, export low-pressure side voltage Vm, or block circuit.Output stage T2 outlet side via resistance Rg3 and with grid control
Terminal Gd connections processed.In addition, 2 voltage sources Vp and Vm intermediate potential are connected with emitter stage control terminal Ed.
At the time of before t1 in figure 3, due to grid current so that the speed-up capacitor device Cg1 being connected in parallel with Rg1 into
To bypass, therefore output stage T1 shut-off resistance turns into Rg2 (Z3).Here, determine for the t1 during mirror image is reached
When complete charge and select speed-up capacitor device Cg1 electric capacity, thus shut-off resistance later t1 in Fig. 3 increases to [Rg1+
Rg2](Z4).On the other hand, terminate during mirror image and grid voltage when reducing (t4 in Fig. 3), defeated from voltage detecting circuit
In the case of entering to represent the grid judgement signal SF that grid voltage is reduced to below setting, resistance switch control portion makes output stage
T2 is turned on, and low-pressure side voltage Vm is connected with resistance Rg3 to form Rg3 and Rg1+Rg2 parallel circuit, is made shut-off resistance
It is reduced to Z5.Here, Rg3 ＜ Rg1+Rg2, accelerate the later cut-outs of t4 to suppress the increase of switching loss.
In Fig. 4, to possessing speed-up capacitor device Cg1 compositions in order to realize the 2nd action example shown in Fig. 3 and illustrating,
But the 1st action example shown in Fig. 2 can also be realized by the composition that speed-up capacitor device Cg1 is removed from Fig. 4.
Here, the shut-off resistance (Z1, Z4) determined by resistance Rg1+Rg2 be turn into " ([threshold voltage of the grid Vth]-
[low-pressure side voltage Vm])/[the electric current Icl of voltage clamp circuit] " more than resistance value, it is expected to be set to and the resistance value turn into
Same degree.
<1st concrete example of the voltage clamp circuit of embodiment 1>
Fig. 5 represents the 1st concrete example of the voltage clamp circuit of the present embodiment.It is to go here and there multiple avalanche diode Dz3~Dz8
Join the composition of connection, be simplest composition.
<2nd concrete example of the voltage clamp circuit of embodiment 1>
Fig. 6 represents the 2nd concrete example of the voltage clamp circuit of the present embodiment.It is in the multiple avalanche diodes being connected in series
Dz3~Dz8 is further connected in series capacitor Cz1 composition.By adding the capacitor for ending DC current to Fig. 5,
Just in case the supply voltage of main circuit increases and collector voltage Vce is also prevented in electricity more than in the case of clamp voltage Vcl
Pressure clamp circuit flows continuously through electric current.
<3rd concrete example of the voltage clamp circuit of embodiment 1>
Fig. 7 represents the 3rd concrete example of the voltage clamp circuit of the present embodiment.In the multiple avalanche diodes being connected in series
Dz3~Dz8 a part of avalanche diode is connected in parallel MOSFET and formed.Following circuit is formed, i.e.,：MOSFET grid
Be connected between tie point and the gate control terminal of multiple avalanche diodes, the avalanche diode being connected in parallel voltage or
When electric current rises and exceedes MOSFET conducting voltage, a part of avalanche diode is set to turn into bypass by MOSFET.At this
In concrete example, even if voltage clamp circuit action and in the case that collector voltage Vce also persistently rises, MOSFET is turned on
And make clamp voltage Vcl reductions, the overvoltage of element can be prevented.
[embodiment 2]
Fig. 8 is the block diagram for the basic composition for representing the semiconductor drive device involved by embodiments of the invention 2.In this reality
Apply in example, as the method for the impedance variations for making output-stage circuit, difference from Example 1 is based on monitoring grid current
The testing result of current detection circuit be controlled.The concrete example and embodiment 1 of control sequence and circuit are same, and omission is said
It is bright.Current detection circuit is defeated in the case where the absolute value reduction of grid current turns into below rated current value (t4 in Fig. 3)
Go out grid and judge signal SF.Or the grid electricity obtained from the grid current to detecting integrates can also be configured to
Lotus Qg absolute value exports grid in the case of turning into below setting and judges signal SF.Here, can be by the rated current value
The regulation quantity of electric charge be set as during mirror image at the end of grid current or gate charge absolute value.
In the present embodiment, due to also same with embodiment 1, reduction semiconductor can be made based on the result of detection of grid current
The timing of the output stage impedance of drive device conforms to Tcl during clamper action, therefore can be suppressed to the increase for cutting off loss
Min..
As the concrete example for the situation for carrying out Multistage Control, current detection circuit possesses multiple rated current values, whenever grid
The current detection value Irg or its integrated value Qg of pole control terminal turn into below each set-point, and grid is judged into signal is believed to control
Number output-stage circuit repeatedly exports, and control signal output-stage circuit judges signal based on the grid repeatedly received from detection circuit
Carry out the impedance of the output stage of multiple switch-over control signal output-stage circuit, so as to little by little reduce impedance.
[embodiment 3]
Fig. 9 is to show to apply the figure of the power-converting device of the semiconductor drive device of the present invention as embodiment 3.
Power-converting device involved by embodiment 3 drives the semiconductor involved by the embodiment of described embodiment 1 or embodiment 2
Dynamic device is used as the drive device of the thyristor in power-converting device.
As shown in Figure 9, the power-converting device 600 involved by embodiment 3 is configured to possess：Thyristor
Q11~Q16；Diode D11~D16；Semiconductor drive device GD11~GD16；Voltage clamp circuit AC11~AC16 and right
The control signal that thyristor Q11~Q16 produces switch motion is higher level's logic section L1 of driving instruction signal.Separately
Outside, the power-converting device 600 involved by embodiment 3 is that the direct current power of voltage Vdc dc source 601 is transformed into exchange
The DC-to-AC converter of electric power.
In addition, in embodiment 3, IGBT is used as thyristor Q11~Q16, but this is not limited to,
Other switch elements such as MOSFET can also be used to form.
Power-converting device 600 connects 3 groups between the positive and negative terminal of dc source 601 makes 2 thyristors
The upper underarm that the polarity of (Q11 and Q12, Q13 and Q14, Q15 and Q16) is as one man connected in series.In addition, led half and half
Body switch element Q11~Q16 emitter stage-inter-collector, for making diode D11~D16 of load current backflow and partly leading
Body switch element opposite polarity and connect respectively in parallel.In addition, the colelctor electrode in each thyristor Q11~Q16 passes
Feel between terminal and gate terminal, connect voltage clamp circuit AC11~AC16.Output switch is connected respectively in gate control terminal
Driving instruction signal semiconductor drive device GD11~GD16.In addition, 2 thyristor (Q11 being connected in series
And Q12, Q13 and Q14, Q15 and Q16) tie point respectively become the lead-out terminal of exchange, with the three-phase as load
Ac motor M1 connections.
Further, power-converting device 600 is distinguished by higher level's logic section L1 via semiconductor drive device GD11~GD16
Thyristor Q11~Q16 switch motion is controlled, friendship is provided to the three-phase alternating-current motor M1 being connected with ac terminal
Flow electric power.Power-converting device 600 produces the driving for each thyristor Q11~Q16 by higher level's logic section L1
Command signal, the driving instruction signal is sent to thyristor via semiconductor drive device GD11~GD16
Q11~Q16 gate terminal (control terminal), thus carry out power converter action.
Here, in the case of producing surge voltage when high current blocks etc. in power-converting device 600, electricity can be passed through
Pressure clamp circuit makes the gate turn-on of thyristor, is constant by collector voltage clamper.In clamper release,
The change of grid voltage or grid current is detected immediately, and reduces the impedance of output-stage circuit, can suppress the increase of cut-out loss.
In addition, in embodiment 3, showing in power-converting device is used in as by the semiconductor drive device of the present invention
Example, illustrates the situation of DC-to-AC converter, but be not limited to this, moreover it is possible to be used in DC-to-dc converter, AC-DC
In other power-converting devices such as converter.
Claims (9)
1. a kind of semiconductor drive device, control the ON/OFF state of thyristor, the semiconductor drive device
It is characterised by possessing：
Control signal output-stage circuit, it transmits control signal to the gate control terminal of the switch element；
Voltage clamp circuit, it is connected between the input terminal of the switch element and gate control terminal；With
Circuit is detected, it detects the voltage or the grid between the lead-out terminal of the switch element and the gate control terminal
Control terminal electric current,
The control signal output-stage circuit is in the disengagement phase of the thyristor, based on the detection circuit
Testing result reduces the impedance of the output stage of the control signal output-stage circuit,
Voltage detecting value between the lead-out terminal of the switch element and the gate control terminal turn into given voltage value with
In the case of lower, or the absolute value of the current detection value in the gate control terminal turns into the situation for giving below current value
Under, or in the case where the integrated value of the current detection value turns into below the given quantity of electric charge, the circuit that detects is by grid
Signal output is judged to the control signal output-stage circuit,
The control signal output-stage circuit exports the control signal in the case where receiving the grid and judging signal
The impedance of the output stage of level circuit reduces.
2. semiconductor drive device according to claim 1, it is characterised in that
The control signal output-stage circuit, in the disengagement phase of the thyristor, make the control signal defeated
Go out the impedance increase of the output stage of grade circuit, the testing result afterwards based on the detection circuit makes the control signal output stage
The impedance of the output stage of circuit is reduced.
3. semiconductor drive device according to claim 2, it is characterised in that
The control signal output-stage circuit has：Resistor, its company of being connected with the output stage of the control signal output-stage circuit
Connect；With speed-up capacitor device, it is connected with the capacitor in parallel,
In the disengagement phase of the thyristor, the speed-up capacitor device is electrically charged, and thus the resistor makes institute
State the impedance increase of the output stage of control signal output-stage circuit.
4. semiconductor drive device according to claim 1, it is characterised in that
The given voltage value be set as cut-out when mirror image during at the end of the switch element lead-out terminal with it is described
Magnitude of voltage between gate control terminal,
The current absolute value of the gate control terminal at the end of during mirror image when the given current value is set as cutting off,
The gate charge amount of the switch element at the end of during mirror image when the given quantity of electric charge is set as cutting off.
5. the semiconductor drive device according to claim 1 or 4, it is characterised in that
The detection circuit has multiple given voltage values or the given current value or the given quantity of electric charge, whenever described
Voltage detecting value between the lead-out terminal of switch element and the gate control terminal turns into below each given voltage value, by described in
Grid judges that signal repeatedly exports to the control signal output-stage circuit, or whenever the electric current of the gate control terminal is examined
The absolute value of measured value turns into below each given current value, and the grid is judged into signal is more to the control signal output-stage circuit
Secondary output, or whenever the gate control terminal current detection value integrated value turn into each given quantity of electric charge below, by institute
State grid and judge that signal repeatedly exports to the control signal output-stage circuit,
The control signal output-stage circuit judges signal based on the grid repeatedly received from the detection circuit, repeatedly
Switch the impedance of the output stage of the control signal output-stage circuit, so as to little by little reduce impedance.
6. according to semiconductor drive device according to any one of claims 1 to 4, it is characterised in that
The voltage clamp circuit has voltage clamping diode.
7. according to semiconductor drive device according to any one of claims 1 to 4, it is characterised in that
The voltage clamp circuit has：Voltage clamping diode；The electric capacity being connected with the voltage clamping Diode series
Device.
8. according to semiconductor drive device according to any one of claims 1 to 4, it is characterised in that
The voltage clamp circuit has：The multiple voltage clamping diodes being connected in series；And switch element, its with it is described more
A part for individual voltage clamping diode is connected in parallel, and is led based on the curtage of the voltage clamping diode
Logical/shut-off.
9. a kind of power-converting device, possess it is multiple by multiple thyristors be connected in series and form up and down
Arm, possess the ON/OFF of each thyristor of the multiple thyristor is controlled it is multiple
Semiconductor drive device,
The power-converting device is characterised by,
The multiple semiconductor drive device is made up of semiconductor drive device according to any one of claims 1 to 8.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014216814A JP6362996B2 (en) | 2014-10-24 | 2014-10-24 | Semiconductor drive device and power conversion device using the same |
| JP2014-216814 | 2014-10-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105553235A CN105553235A (en) | 2016-05-04 |
| CN105553235B true CN105553235B (en) | 2018-02-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510644671.6A Active CN105553235B (en) | 2014-10-24 | 2015-10-08 | Semiconductor drive device and the power-converting device using the semiconductor drive device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6362996B2 (en) |
| CN (1) | CN105553235B (en) |
| DE (1) | DE102015220594A1 (en) |
| GB (1) | GB2533677B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2533677B (en) | 2017-06-07 |
| JP6362996B2 (en) | 2018-07-25 |
| CN105553235A (en) | 2016-05-04 |
| GB2533677A (en) | 2016-06-29 |
| DE102015220594A1 (en) | 2016-04-28 |
| JP2016086490A (en) | 2016-05-19 |
| GB201517910D0 (en) | 2015-11-25 |
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