CN105552026B - The preparation method of TEG feeler switch on tft array substrate - Google Patents
The preparation method of TEG feeler switch on tft array substrate Download PDFInfo
- Publication number
- CN105552026B CN105552026B CN201610071581.7A CN201610071581A CN105552026B CN 105552026 B CN105552026 B CN 105552026B CN 201610071581 A CN201610071581 A CN 201610071581A CN 105552026 B CN105552026 B CN 105552026B
- Authority
- CN
- China
- Prior art keywords
- several
- teg
- photoresistance
- active layer
- feeler switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The preparation method that the present invention provides TEG feeler switch on a kind of tft array substrate, several the first active layers positioned at viewing area and several the second active layers for being used to form TEG feeler switch positioned at external zones are formed on substrate, then the light shield of particular design is utilized, form several first and second photoresistance pattern units, second photoresistance pattern unit is in day font, including a word portion and the mouth word portion of encirclement second active layer above the second active layer center section；With it is existing using the light shield of Dark patterns compared with, increase to be formed for defining TEG feeler switch active layer be ion implanted scope photoresistance pattern area, so as to prevent because photoresistance area is too small, in subsequent ion implantation process photoresistance because load effect coking is serious be difficult to remove the problem of；In addition, with it is existing using the light shield of Clear patterns compared with, reduce the area of the photoresistance pattern on whole substrate, be easy to carry out so that follow-up photoresistance peels off processing procedure.
Description
Technical field
The present invention relates to a kind of preparation method of TEG feeler switch in display technology field, more particularly to tft array substrate.
Background technology
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal
Display, LCD) and active matrix drive type organic electroluminescence display device and method of manufacturing same (Active Matrix Organic Light-
Emitting Diode, AMOLED) in main driving element, the display performance of direct relation panel display apparatus.Film is brilliant
Body pipe has various structures, and the material for preparing the thin film transistor (TFT) of corresponding construction also has a variety of, wherein low temperature polycrystalline silicon (Low
Temperature Poly-silicon, LTPS) material is wherein more preferable a kind of.
Whether LCD or AMOLED includes a tft array substrate.Typically in the product manufacturing stage of display panel,
, can be in the big of display pannel for the characteristic value of effective luminous zone (AA areas, Active Area) of monitoring display device panel product
Plate surrounding or panel surrounding design testing element group (TEG, Test Element Group), it includes multiple feeler switch (Test
Key), TFT (thin film transistor (TFT))/Rs (line resistance or the face electricity that these feeler switch are used to monitor in the circuit such as display panel
Resistance) various assemblies such as/Rc (contact resistance between different conductor)/C (electric capacity) RC characteristics.
, it is necessary to which (Implant) technique is repeatedly ion implanted in the making of LTPS tft array substrates, planted in ion
Energy when entering preceding, it is necessary to form the scope that photoresistance pattern is ion implanted to define on substrate using light shield, but being ion implanted
It is higher, larger, the easy coking of photoresistance, it is difficult to remove is injured to photoresistance.
Generally, light shield is divided into Clear patterns and Dark pattern two ways.Wherein Clear patterns are：Formed
Photoresistance pattern be only that will need not cover the substrate portions that necessarily expose exposes, and by other must cover and can
The substrate portions that covering to cover are covered；Therefore, the photoresist layer area formed using Clear patterns is larger, from
Photoresistance residual is easily formed after son implantation.And Dark patterns are：The photoresistance pattern formed is only needs masking i.e. necessarily
The substrate portions masking of masking, and for other must not cover and the substrate portions that can not be covered can be covered do not cover and reveal
Go out；Therefore, using Dark patterns, photoresistance area can be reduced, but if photoresistance area is too small, easily makes the photoresistance portion that area is too small
Divide all coking, it is more difficult to remove.
Referring to Fig. 1, traditional LTPS TFT manufacture crafts are first on the substrate 100 buffer layer (buffer
Layer), then deposition of amorphous silicon layers (a-Si) and its crystallization is made to be polysilicon layer (poly-Si), then using light shield to polycrystalline
Silicon layer carries out patterned process to form active layer, wherein, the active layer includes being used to form tft array in viewing area
Several array arrangements the first active layer 210 and viewing area outside be used for form Test Key several second active layers
220；Light shield is reused afterwards, photoresistance pattern is formed on cushion and active layer, to define the model of subsequent ion implantation
Enclose, generally use Dark patterns form photoresistance pattern at present, then as shown in figure 1, formed photoresistance pattern is included positioned at aobvious
Show in region and several first photoresistance pattern units 310 of scope are ion implanted for defining several first active layers 210, and be located at
Several second photoresistance pattern lists of scope are ion implanted outside viewing area for defining Test Key several second active layers 220
Member 320；Wherein, multiple first active layers 210 that are located at a line of each photoresistance pattern unit 310 on substrate 100, and
Cover the center section of the first active layer 210；And one the second active layer of every one second photoresistance pattern unit, 320 corresponding maskings
220 center section, therefore, this make it that the photoresistance area of the second photoresistance pattern unit 320 is too small, then is implanted into subsequent ion
During, the second photoresistance pattern unit 320 (load effect, can cause processing because of Loading effect due to load change
The change of process) and edge coking is serious, so as to be difficult to be removed.In addition, also there are a small number of producers using Clear patterns to be formed
Photoresistance pattern, then the photoresistance pattern formed will cover whole substrate substantially, only expose the need necessarily exposed and carry out subsequently
The first active layer 210 and the two end portions of the second active layer 220 being ion implanted, it is clear that under this kind of pattern, photoresistance pattern plane
Product is excessive, and when follow-up photoresistance peels off processing procedure, photoresistance is also difficult to remove totally.
The content of the invention
It is an object of the invention to provide a kind of preparation method of TEG feeler switch on tft array substrate, area is avoided the formation of
Too small photoresistance unit, so as to prevent after ion implantation technology, photoresistance because coking is serious be difficult to remove the problem of.
To achieve the above object, the preparation method that the present invention provides TEG feeler switch on a kind of tft array substrate, including with
Lower step：
Step 1, a substrate is provided, the substrate is divided into centrally located viewing area and around the viewing area
External zones；
Step 2, on the substrate buffer layer, the deposition of amorphous silicon layers on the cushion, enter to amorphous silicon layer
Row crystallization processing, so as to form polysilicon layer；
Step 3, to the polysilicon layer carry out patterned process, obtain several the first active layers positioned at viewing area and
Several the second active layers positioned at external zones；
Second active layer is used to form TEG feeler switch；
Step 4, light shield is provided, one layer of photoresist is coated with first and second active layer and cushion, utilizes institute
State light shield and development is exposed to this layer of photoresist, obtain being located at several first photoresistance pattern units of viewing area and be located at
Several second photoresistance pattern units of external zones；
The first photoresistance pattern unit is located at the top of the center section of first active layer；The second photoresistance figure
Case unit is in day font, including a word portion above the second active layer center section and to surround described second active
The mouth word portion of layer, the second photoresistance pattern unit expose the two end portions of the second active layer and cover the centre of the second active layer
Part；
Step 5, using several first and second photoresistance pattern units as shielding layer, to first and second active layer carry out ion plant
Enter；
All first and second photoresistance pattern units in step 6, the stripping substrate.
Several first active layers are arranged in array；The first photoresistance pattern unit is located at same a line across several
The first active layer center section.
The photoresist being coated with the step 4 is positive photoresist.
The light shield provided in the step 4 includes shading region and transparent area, the figure of the shading region and pre-formed number
The shape of individual first photoresistance unit and several second photoresistance units is corresponding.
Several first active layers are used to form tft array.
In the step 2, amorphous silicon layer is set to turn to polysilicon layer by rapid thermal anneal process.
On the tft array substrate preparation method of TEG feeler switch be additionally included in the substrate external zones formed correspondingly
The step of several second grids of several second active layers, several second drain electrodes and several second source electrodes, to form TEG tests
Key.
The substrate provided in the step 1 is glass substrate.
First active layer includes the first connecting portion to take the shape of the letter U and the first end for being connected to first connecting portion both ends；
First photoresistance pattern unit both sides parallel in the first connecting portion of the U-shaped, cover the center section on the both sides.
Second active layer is including being in the second connecting portion of strip and being connected to second end at second connecting portion both ends
Portion；One word portion of the second photoresistance pattern unit is perpendicular to the second connecting portion, the second photoresistance pattern unit masking
Simultaneously expose the second end in the center section of the second connecting portion.
Beneficial effects of the present invention：The preparation method of TEG feeler switch on a kind of tft array substrate provided by the invention,
Formed on substrate several array arrangements positioned at viewing area the first active layer and it is several positioned at external zones be used for form TEG
Second active layer of feeler switch, then first and second active layer is defined respectively model is ion implanted using the light shield of particular design, formation
The several first and second photoresistance pattern units enclosed, wherein, the second photoresistance pattern unit is in day font, including has positioned at described second
The mouth word portion in a word portion and encirclement second active layer above active layer center section, the second photoresistance pattern unit expose
The two end portions of second active layer and the center section for covering the second active layer；With the existing light shield phase using Dark patterns
Than, increase to be formed for defining TEG feeler switch active layer be ion implanted scope photoresistance pattern area, so as to prevent
Because photoresistance area is too small, in subsequent ion implantation process photoresistance because load effect coking is serious be difficult to remove the problem of；Separately
Outside, with it is existing using the light shield of Clear patterns compared with, reduce the area of the photoresistance pattern on whole substrate so that after
Continuous photoresistance peels off processing procedure and is easy to carry out.
Brief description of the drawings
In order to be further understood that the feature of the present invention and technology contents, refer to below in connection with the detailed of the present invention
Illustrate and accompanying drawing, however accompanying drawing only provide with reference to and explanation use, be not used for being any limitation as the present invention.
In accompanying drawing,
Fig. 1 forms the ion for defining the first active layer and the second active layer for the existing light shield using Dark patterns
The schematic diagram of the photoresistance pattern of transplanting scope；
Fig. 2 is the flow chart of the preparation method of TEG feeler switch on the tft array substrate of the present invention；
Fig. 3 is the schematic diagram of the step 2 of the preparation method of TEG feeler switch on the tft array substrate of the present invention；
Fig. 4-5 is the schematic diagram of the step 3 of the preparation method of TEG feeler switch on the tft array substrate of the present invention；
Fig. 6-7 is the schematic diagram of the step 4 of the preparation method of TEG feeler switch on the tft array substrate of the present invention；
Fig. 8 is the light shield provided in the step 4 of the preparation method of TEG feeler switch on the tft array substrate of the present invention
Structural representation；
Fig. 9 is the schematic diagram of the step 5 of the preparation method of TEG feeler switch on the tft array substrate of the present invention；
Figure 10 is the schematic diagram of the step 6 of the preparation method of TEG feeler switch on the tft array substrate of the present invention.
Embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferable to carry out for the present invention
Example and its accompanying drawing are described in detail.
Referring to Fig. 2, on a kind of tft array substrate provided by the invention TEG feeler switch preparation method, including following step
Suddenly：
Step 1, a substrate 10 is provided, the substrate 10 is divided into centrally located viewing area 11 and around described aobvious
Show the external zones 12 in area 11.
Preferably, the substrate 10 is glass substrate.
Step 2, as shown in figure 3, on the substrate 10 buffer layer 20, the deposited amorphous silicon on the cushion 20
Layer, carries out crystallization processing, so as to form polysilicon layer 30 to amorphous silicon layer.
Specifically, crystallization processing is carried out to amorphous silicon layer by rapid thermal anneal process.
Step 3, as illustrated in figures 4-5, patterned process is carried out to the polysilicon layer 30, obtain several being located at viewing area 11
The first active layer 31 and several the second active layers 32 positioned at external zones 12；
Second active layer 32 is used to form TEG feeler switch.
Specifically, several first active layers 31 are arranged in array, for forming tft array.
Specifically, polysilicon layer 30 described in the step 3 carry out patterned process process include light blockage coating, exposure,
The processing procedures such as development, etching and photoresistance stripping.
Step 4, as shown in fig. 6-7, there is provided light shield 50, applied on first and second active layer 31,32 and cushion 20
One layer of photoresist of cloth, development is exposed to this layer of photoresist using the light shield 50, obtains the number positioned at viewing area 11
Individual first photoresistance pattern unit 41 and several second photoresistance pattern units 42 positioned at external zones 12；
The first photoresistance pattern unit 41 is located at the top of the center section of first active layer 31；Second light
Pattern unit 42 is hindered in day font, including a word portion 421 and encirclement institute above the center section of the second active layer 32
The mouth word portion 422 of the second active layer 32 is stated, the second photoresistance pattern unit 42 exposes the two end portions of the second active layer 32 simultaneously
Cover the center section of the second active layer 32.
Specifically, the photoresist being coated with the step 4 is positive photoresist；As shown in figure 8, provided in the step 4
Light shield 50 includes shading region 51 and transparent area 52, the figure of the shading region 51 and pre-formed several first photoresistance units 41 and
The shape of several second photoresistance units 42 is corresponding.
Specifically, the first photoresistance pattern unit 41 is across several pars intermedias for being located at the first active layer 31 with a line
Point.
Specifically, first active layer 31 includes the first connecting portion 311 to take the shape of the letter U and is connected to first connecting portion 311
The first end 312 at both ends；The first photoresistance pattern unit 41 is parallel two in the first connecting portion 311 of the U-shaped
Side, cover the center section on the both sides；Second active layer 32 include in strip second connecting portion 321 and be connected to the
The second end 322 at the both ends of two connecting portion 321；
Specifically, a word portion 421 of the second photoresistance pattern unit 42 is perpendicular to the second connecting portion 321, it is described
Second photoresistance pattern unit 42 covers the center section of the second connecting portion 321 and exposes the second end 322.
Step 5, as shown in figure 9, being shielding layer with several first and second photoresistance pattern units 41,42, to described first and second
Active layer 31,32 is ion implanted.
By the second photoresistance unit 42 relatively increases compared to the photoresistance pattern that Dark pattern light shields are formed, area,
Therefore, during being ion implanted, be not in the complete coking caused by photoresistance area is too small, subsequently made so as to avoid
The problem of being difficult to remove in journey.In addition, with it is existing using the light shield of Clear patterns compared with, reduce the light on whole substrate
The area of pattern is hindered, is easy to carry out so that follow-up photoresistance peels off processing procedure.
Step 6, as indicated by 10, peels off all first and second photoresistance pattern units 41,42 on the substrate 10.
Specifically, the preparation method of TEG feeler switch is additionally included in the outer of the substrate 10 on the tft array substrate of the present invention
Enclose the step that area 12 forms the several second grids for corresponding to several second active layers 32, several second drain electrodes and several second source electrodes
Suddenly, to form TEG feeler switch.
In summary, on a kind of tft array substrate provided by the invention TEG feeler switch preparation method, the shape on substrate
Into several array arrangements positioned at viewing area the first active layer and it is several positioned at external zones be used for form TEG feeler switch
Second active layer, then first and second active layer is defined respectively the several of scope are ion implanted using the light shield of particular design, formation
First and second photoresistance pattern unit, wherein, the second photoresistance pattern unit is in day font, including among second active layer
One word portion of upper and the mouth word portion for surrounding second active layer, it is active that the second photoresistance pattern unit exposes second
The two end portions of layer and the center section for covering the second active layer；With it is existing using the light shield of Dark patterns compared with, increase
The area that the photoresistance pattern of scope is ion implanted in the active layer of TEG feeler switch is formed for defining, so as to prevent because of photoresistance face
Product is too small, in subsequent ion implantation process photoresistance because load effect coking is serious be difficult to remove the problem of；In addition, with it is existing
The light shield using Clear patterns compare, the area of the photoresistance pattern on whole substrate is reduced, so that follow-up photoresistance is peeled off
Processing procedure is easy to carry out.
It is described above, for the person of ordinary skill of the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. the preparation method of TEG feeler switch on a kind of tft array substrate, it is characterised in that comprise the following steps：
Step 1, a substrate (10) is provided, the substrate (10) is divided into centrally located viewing area (11) and around described
The external zones (12) of viewing area (11)；
Step 2, the buffer layer (20) on the substrate (10), the deposition of amorphous silicon layers on the cushion (20), to non-
Crystal silicon layer carries out crystallization processing, so as to form polysilicon layer (30)；
Step 3, patterned process is carried out to the polysilicon layer (30), obtain several the first active layers positioned at viewing area (11)
And several the second active layers (32) positioned at external zones (12) (31)；
Second active layer (32) is used to form TEG feeler switch；
Step 4, light shield (50) is provided, one layer of photoresistance is coated with first and second active layer (31,32) and cushion (20)
Material, development is exposed to this layer of photoresist using the light shield (50), obtains several first positioned at viewing area (11)
Photoresistance pattern unit (41) and several second photoresistance pattern units (42) positioned at external zones (12)；
The first photoresistance pattern unit (41) is located at the top of the center section of first active layer (31)；Second light
Hinder pattern unit (42) in day font, including a word portion (421) above the second active layer (32) center section and
Surround second active layer (32) and the mouth word portion (422) being connected with word portion (421) both ends, second photoresistance
Pattern unit (42) exposes the two end portions of the second active layer (32) and covers the center section of the second active layer (32)；
Step 5, with several first and second photoresistance pattern units (41,42) for shielding layer, to first and second active layer (31,32)
It is ion implanted；
All first and second photoresistance pattern units (41,42) in step 6, the stripping substrate (10).
2. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 1, it is characterised in that described several
One active layer (31) is arranged in array；The first photoresistance pattern unit (41) is across several active positioned at first with a line
The center section of layer (31).
3. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 1, it is characterised in that the step 4
The photoresist of middle coating is positive photoresist.
4. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 3, it is characterised in that the step 4
The light shield (50) of middle offer includes shading region (51) and transparent area (52), the figure of the shading region (51) with it is pre-formed several
First photoresistance unit (41) is corresponding with the shape of several second photoresistance units (42).
5. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 2, it is characterised in that described several
One active layer (31) is used to form tft array.
6. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 1, it is characterised in that the step 2
In, amorphous silicon layer is turned to polysilicon layer (30) by rapid thermal anneal process.
7. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 1, it is characterised in that be additionally included in institute
State substrate (10) external zones (12) formed several second grids of corresponding several second active layers (32), several second drain electrodes,
And the step of several second source electrodes, to form TEG feeler switch.
8. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 1, it is characterised in that the step 1
The substrate (10) of middle offer is glass substrate.
9. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 2, it is characterised in that described first has
Active layer (31) includes the first connecting portion (311) to take the shape of the letter U and the first end for being connected to first connecting portion (311) both ends
(312)；The first photoresistance pattern unit (41) both sides parallel in the first connecting portion (311) of the U-shaped, masking should
The center section on both sides.
10. the preparation method of TEG feeler switch on tft array substrate as claimed in claim 1, it is characterised in that described second
Active layer (32) is including being in the second connecting portion (321) of strip and being connected to the second end at second connecting portion (321) both ends
(322)；One word portion (421) of the second photoresistance pattern unit (42) is perpendicular to the second connecting portion (321), and described second
Photoresistance pattern unit (42) covers the center section of the second connecting portion (321) and exposes the second end (322).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610071581.7A CN105552026B (en) | 2016-02-01 | 2016-02-01 | The preparation method of TEG feeler switch on tft array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610071581.7A CN105552026B (en) | 2016-02-01 | 2016-02-01 | The preparation method of TEG feeler switch on tft array substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105552026A CN105552026A (en) | 2016-05-04 |
| CN105552026B true CN105552026B (en) | 2018-03-30 |
Family
ID=55831128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610071581.7A Active CN105552026B (en) | 2016-02-01 | 2016-02-01 | The preparation method of TEG feeler switch on tft array substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552026B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505071B (en) * | 2016-10-18 | 2019-12-06 | 武汉华星光电技术有限公司 | thin film transistor array substrate and manufacturing method thereof |
| CN107731690B (en) * | 2017-09-28 | 2020-05-05 | 武汉华星光电技术有限公司 | Preparation method of thin film transistor, photomask, thin film transistor and display device |
| CN108196408B (en) * | 2017-12-28 | 2021-03-23 | Tcl华星光电技术有限公司 | Test key for COA substrate and test method using the same |
| CN110112149A (en) * | 2019-05-23 | 2019-08-09 | 武汉华星光电技术有限公司 | Array substrate detects key and display panel |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377209A (en) * | 2014-11-24 | 2015-02-25 | 深圳市华星光电技术有限公司 | Thin film transistor array substrate and liquid crystal display device |
| CN104992960A (en) * | 2015-06-08 | 2015-10-21 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof, and TFT test method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007328289A (en) * | 2006-06-09 | 2007-12-20 | Sanyo Electric Co Ltd | Reticle, semiconductor chip, and method of manufacturing semiconductor device |
-
2016
- 2016-02-01 CN CN201610071581.7A patent/CN105552026B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377209A (en) * | 2014-11-24 | 2015-02-25 | 深圳市华星光电技术有限公司 | Thin film transistor array substrate and liquid crystal display device |
| CN104992960A (en) * | 2015-06-08 | 2015-10-21 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof, and TFT test method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105552026A (en) | 2016-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105552026B (en) | The preparation method of TEG feeler switch on tft array substrate | |
| CN103219391B (en) | A kind of thin-film transistor and preparation method thereof, array base palte and display unit | |
| US20150179679A1 (en) | Array substrate, manufacturing method thereof and display device | |
| CN108231795A (en) | Array substrate, production method, display panel and display device | |
| CN109216374A (en) | Display device and its manufacturing method | |
| US10546885B2 (en) | Thin film transistor and display substrate, fabrication method thereof, and display device | |
| CN109148491B (en) | Array substrate, preparation method thereof and display device | |
| US20160013210A1 (en) | Array substrate, method for manufacturing the same, and display device | |
| CN103151304B (en) | Array substrate of display panel and manufacturing method thereof | |
| CN106597770B (en) | A kind of array substrate and preparation method thereof, display device | |
| WO2018199037A1 (en) | Active matrix substrate and manufacturing method therfor | |
| CN104218019A (en) | Thin film transistor array substrate and method of manufacturing the same | |
| CN106898710A (en) | A kind of OLED display panel and preparation method thereof, display | |
| CN101556935B (en) | Manufacturing method of thin film transistor array substrate | |
| CN106206620A (en) | Thin-film transistor array base-plate and preparation method thereof and display device | |
| CN103681515B (en) | A kind of complementary thin-film transistor drives backboard and preparation method thereof, display device | |
| US11145766B2 (en) | Active-matrix substrate and display device | |
| CN105655352B (en) | The production method of low temperature polycrystalline silicon tft array substrate | |
| US9651839B2 (en) | Array substrate and manufacturing method thereof, display panel and display device | |
| WO2021120378A1 (en) | Array substrate and method for manufacturing same | |
| CN108054140A (en) | FFS mode array substrate and its manufacturing method | |
| EP3220415B1 (en) | Thin-film transistor array substrate and preparation method therefor, and display device | |
| CN108511464B (en) | Manufacturing method of CMOS L TPS TFT substrate | |
| CN102254861B (en) | Manufacturing methods of thin film transistor matrix substrate and display panel | |
| US8987072B2 (en) | Method of manufacturing an LTPS array substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |