CN105517952A - 石墨制品 - Google Patents

石墨制品 Download PDF

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Publication number
CN105517952A
CN105517952A CN201480048947.8A CN201480048947A CN105517952A CN 105517952 A CN105517952 A CN 105517952A CN 201480048947 A CN201480048947 A CN 201480048947A CN 105517952 A CN105517952 A CN 105517952A
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China
Prior art keywords
graphite
goods
graphite product
heat
contact
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CN201480048947.8A
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D.G.里奇
M.D.斯马尔奇
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Advanced Energy Technology Co Ltd
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Graftech International Holdings Inc
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Publication of CN105517952A publication Critical patent/CN105517952A/zh
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C04B35/524—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from polymer precursors, e.g. glass-like carbon material
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    • B32—LAYERED PRODUCTS
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    • B32—LAYERED PRODUCTS
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
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    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • B32—LAYERED PRODUCTS
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    • B32B2307/302—Conductive
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    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/72—Density
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/407—Copper
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/408—Noble metals
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Abstract

本文公开一种石墨制品，所述石墨制品可在100KPa或更小的接触压力下被压缩超过百分之三(3％)而不会损坏所述石墨制品，从而减小所述制品所展示的热阻抗。本文还公开一种包含石墨化聚合物的石墨制品，所述石墨制品具有至少75微米的厚度。优选地，所述石墨具有小于1.50g/cc的密度和在100KPa的接触压力下超过3％的压缩率。所述制品还具有大致片状的形状。这些制品可在热管理***中用于消散来自热源的热量。

Description

石墨制品
本申请要求2013年11月5日提交的第61/899,998号美国临时申请的优先权。特此根据至少美国法典第35篇第365条要求上述申请的优先权益。
本文所述的制品大体上涉及石墨制品的领域，具体地说涉及可用于热管理***的石墨制品的领域。
技术背景
石墨制品已在各种装置的热管理中使用。石墨的这些现有用途包括在z方向上远离热源消散热量或者在x-y方向上远离热源上显示的热点传播热量。
就在z方向上消散热量而言，常规认知为使热源与热消散元件之间的距离最小化。这通过使石墨制品厚度最小化并根据常规认知由此使制品的通体热阻抗最小化来实现。
简述
本文所包括的一个实施方案为一种石墨制品，所述石墨制品可在100KPa或更小的接触压力下被压缩超过百分之三(3％)而不会损坏所述石墨制品，从而减小所述制品所展示的热阻抗。
另一个实施方案包括一种包含石墨化聚合物的石墨制品，所述石墨制品具有至少50微米的厚度。优选地，所述石墨具有小于1.50g/cc的密度和在100KPa的接触压力下超过3％的压缩率。所述制品还具有大致片状的形状。
应了解，以上简述与以下详述二者均提供本公开的实施方案并且意图提供对所要求保护的本发明的性质和特征的理解的综述或框架。
附图说明
图1为本文所述的制品的顶视图。
图2为沿着图1的线A-A的沿箭头B旋转的横截面视图。
图3为图2的替代实施方案的沿着图1的线A-A的沿箭头B旋转的横截面视图。
图4为本文所述的另一个制品的侧视图。
图5-5(c)为包括本文所公开的石墨制品的热管理***的不同实施方案的示意图。
图6为包括石墨制品的热管理***的另一个实施方案的示意图。
详述
本文所公开的制品包括大致为片状形状的石墨制品。所述制品包含石墨化聚合物，其厚度为至少50微米、优选地至少75微米。制品的厚度范围可高达300微米。任选的示例性厚度可包括至少75微米、至少100微米、至少150微米、至少200微米、至少250微米或任何其他所需厚度。石墨的密度通常小于1.50g/cc。对于所述制品的任何给定实施方案，根据最终应用需要，密度范围可为小于1.25g/cc至约0.3g/cc。应理解，这些范围端点之间的所有密度均为本文所公开的并且为可能的。示例性密度包括小于0.4g/cc、小于0.5g/cc、小于0.6g/cc、小于0.7g/cc、小于0.85g/cc、小于1.0g/cc和小于1.25g/cc。
所述制品具有在100KPa的接触压力下超过3％的压缩率。给定实施方案的示例性压缩率范围可为超过3％至高达75％。压缩率的具体实例包括超过5％、超过10％、超过20％、超过25％、超过30％和高达65％。为提供压缩率数值的含义的非限制性实例，如果压缩的厚度为原始厚度的35％，则所述制品展示65％的压缩率。
所述制品的压缩率的测试不限于任何特定的方法或装置。可用于测试压缩率的示例性装置包括Greening型号1140压缩率测试机和TestMachineInc.(“TMI”)压缩试验机型号17-76或17-77。这种厚度减小可以是制品未破裂或无其他破坏情况下的永久性厚度减小。在通过测量制品厚度变化来测量压缩率的情况下，可使用MahrExtreme厚度测试仪。
任选地，所述制品可包含一种或多种掺杂物。一种这样的掺杂物可以是导电聚合物，另一种掺杂物可包括EMI调节剂。EMI掺杂物的实例包括镍、铜、μ磁性合金(mu-metal)及其组合。μ磁性合金为具有高磁导率的镍-铁合金。导电聚合物也可具有在制品表面上润湿的有益特性。所述聚合物的非限制性实例可包括油或填充有导电材料的聚合物。其他掺杂物包括相变材料或介电材料。在制品包含油、油脂或相变材料(非限制性实例为蜡)的情况下，优选的是所述制品包含足够量的油、油脂或相变材料以减小所述制品在作为一个或多个热源与热消散元件之间的热界面的应用中所展示的接触阻抗。掺杂物可以是液体、颗粒、粉末或细丝的形式。非限制性示例性实施方案在于所述制品包含至少5重量％的掺杂物。当所述制品包含掺杂物时，构成所述制品的石墨的一个或多个表面可包括穿孔、凹口、切口及其组合。这可称为间隔。优选地，所述间隔被设定尺寸、形状和位置以辅助在石墨中机械夹杂掺杂物。间隔的功能的实例包括它们可用于以掺杂物浸渍整个制品或者两个间隔将掺杂物定位在制品的一个或多个表面上。在图4中示出制品10，其具有在制品10的主表面24上的多个切口22。如所示的，切口具有大致燕尾形的构型。本文所涵盖的切口不限于任何特定的取向。
再次当用于热界面应用时，所述制品可展示出在至少200KPa的接触压力下小于0.019℃/W的热阻率。合适的热阻率的实例包括小于0.015℃/W、小于0.010℃/W和小于0.08℃/W，如在符合ASTMD5470标准测试方法的要求的装置上测量的。
在至少700KPa的接触压力下，石墨制品展示出不超过0.25cm2℃/W、优选不超过0.20cm2℃/W的总热阻抗。总热阻抗为制品所展示的接触阻抗和通体阻抗的量度。
在另一个实施方案中，随着接触压力从100KPa增加至700KPa，石墨制品所展示的总热阻抗减少因数为至少6、优选至少7、甚至更优选至少8。
上述石墨制品的另一个优点为施加于制品上的接触压力可增加制品的面内热导率。例如，随着接触压力从100KPa增加至700KPa，制品所展示的面内热导率可增加至少1.25倍、优选至少1.5倍、更优选地多至至少2倍。
制品可以是单片制品；单片在本文中用于意指所述制品不包括多个石墨片来实现所需厚度。换句话说，制品可基本上由单个石墨片组成。另一种说法为制品可以没有超过一个石墨片。
在一个不同的实施方案中，制品可包括超过一个上述石墨片。优选地，每个石墨片被定向成使得每个单独的石墨片的x-y平面处于制品的水平方向而不处于制品的垂直方向。各个片可堆叠至任何所需厚度。在这个实施方案中，任选地，热塑性片可设置于相邻石墨片之间。在包括“N”个数目的石墨片的制品的情况下，所述制品可包括多至“N-1”个热塑性片，其中每个热塑性片设置于两(2)个不同石墨片之间。
所述制品不限于仅包含石墨。所述制品可在制品的一个或多个表面上包含粘合剂。例如，所述制品可在制品的一个或多个主表面上包含粘合剂。粘合剂可完全施加在制品的一个主表面上。或者粘合剂可以画框取向施加，诸如施加于图1和图2所示的主表面的足够的外周边部分。如图1所示，制品10包括具有主表面14的石墨片12。粘合剂16施加到主表面14的周边部分。图2为沿着图1的线A-A且在箭头B的方向上旋转的横截面视图。在另一个实施方案中，粘合剂可施加到主表面周边的三(3)个或更少的边缘部分，如图3所示。如果有此需要，制品10可被设定尺寸以使得热源可接合粘合剂16或使得热源将配合在粘合剂内部以直接接合制品10的外部石墨部分。
制品可另选地或与粘合剂组合包括在制品的一个主表面上的第一热塑性层。第二热塑性层可处于制品的其他主表面上。如果有此需要，第一热塑性层、第二热塑性层或两者可形成制品的外表面。在制品的一个具体实施方案中，热塑性层将不会定位在设置成与热源热接触的主表面上。换句话说，热塑性层可设置在计划与热源相反的主表面上。
在另一个具体实施方案中，如果有此需要，所述制品可以是由热塑性塑料密封的封套。密封的封套可用于描述当热塑性层延伸超过石墨片的边缘使得制品的石墨片被密闭包封在热塑性片中时的情况。在一个具体的密封封套实施方案中，一个或多个热塑性片可在制品的所需周边部分周围形成框架，从而使石墨制品的每个主表面上的中心部分不被热塑性层覆盖。任选地，石墨制品的仅一个主表面可被上述框架封套密封件覆盖。
在一个具体实施方案中，所述制品具有小于0.127mm的胶层厚度。所述胶层厚度为制品的整个厚度。
所述制品可被包括在热管理***中。制品的一个主表面具有与所述制品所热接触的热源的接触表面积基本上相似的接触表面积。热源的非限制性实例列表包括电子组件诸如CPU、GPU、驱动芯片、存储芯片、RF功率放大器、收发器、DC/DC切换器、PMIC(电源管理IC)、降压和/或升压电感器、电源转换器、无线充电元件、图像处理和稳定元件、静止或视频图像照明源、LED、磁盘驱动器和CD/DVD/蓝光驱动器。优选地，制品的第二个主表面可与热消散元件热接触。热消散元件的非限制性实例包括散热片、散热器、热管、冷板、电子装置框架、电子装置底架。制品同样可应用于照明应用、电信应用和OLED装置。在另一个替代实施方案中，制品的接触表面可大于其所接触的装置的接触表面积。
以上制品可以各种方式结合到电子装置中。关于如何在这种装置中使用制品的几个实例将在下文中讨论。
图6中示出用于电子装置的热管理***40。热管理***40消散来自热源42的热量，所述热源可以是以上热源实例中的任一种。在***40中，石墨制品44与热源42热接触。所述***还可包括一个或多个其他石墨制品44。如所示的，每个石墨制品44与另一个石墨制品44热连通。如所示的，相邻石墨制品的主表面不具有相同的面积。如所示的，中间石墨制品44’被设置成与RF罐46的顶表面对齐。石墨制品44’可被设定尺寸以配合通过罐46中的开口。如所示的，石墨制品44’的每个主表面并不被设定尺寸以具有与它所热连通的石墨制品44和44”基本上相同的表面积。最后，与热源42最相背的石墨制品44可与热消散元件48热连通。如所示的，石墨制品44”的主表面的表面积任选地不必与其所热接触的热消散元件的主表面的表面积相同。热消散元件的表面的表面积可大于与元件48热接触的石墨制品44”的主表面的表面积。
在图5中示出另一种形式的热管理***50。热管理***50可包括热消散元件52。消散元件52可与石墨制品44热接触。在***50中，并非具有元件44’，***50包括材料层，所述材料层具有多个更小形式的制品44(标记为元件44a)中的一个和多个间隙垫54中的一个。如所示的，所述层可包括两(2)个石墨制品44a和三(3)个间隙垫54。实施方案50的层可包括间隙垫54和石墨制品44a的任何所需组合和取向。
***50还可包括与所述层热连通的接触元件56。接触元件可包括以下各项中的任一种或其组合：各向同性材料、各向同性材料和石墨制品的层合物、石墨制品-各向同性材料-石墨制品的层合物或者在最接近热源的石墨制品之上或之中具有掺杂物的石墨制品-各向同性材料-石墨制品的层合物。各向同性材料的实例可包括任何类型的金属或金属合金，诸如但不限于钢、铝、铜、其合金及其组合。接触元件56与热源热接触。
在图5(a)中，***50与RF罐盖57的顶部热接触。在图5(b)中，***50与热源58的顶表面热接触。在图5(b)中还示出与热源58相邻的一对RF罐侧壁59。热***50可以或可以不与该对RF罐侧壁接触。图5(c)示出***50与RF罐侧壁59接触。
如果有此需要，制品可包括相变材料诸如蜡或任何其他已知的相变材料。制品内可包含的其他材料包括油脂、油或聚合物。如果有此需要，可组合使用这些材料。可将所述材料涂覆到制品上和/或浸渍到制品中。
本文还公开了一种制作电子装置的方法。所述方法可包括将制品设置成与热源或热消散元件中的一个有效热接触。然后将制品设置成与在前一个步骤中未附接的热源或热消散元件中的另一者有效热接触。附接导致制品以至少50KPa的接触压力被压缩至少3％。制品的压缩可为至少10％。制品本身可为至少20微米。制品的压缩量的实例可为至少50微米、至少75微米、至少100微米。压缩量可通过制品厚度的变化来确定。有效热接触在本文中用于意指制品在以上第一个步骤中从热源接收热量并且在第二个步骤中它传送热量，最终将热量传送到热消散元件。换句话说，制品促成从热源到热消散元件的热路径。制品可与热源任一者或二者实际物理接触，但并不要求这种物理接触来实践以上方法。
本文还公开了一种可用作热界面的制品。所述制品将具有小于1.50g/cc的密度、至少75微米的厚度、大于2W/mK的贯通平面热导率和至少3％的压缩率优选地至少5％的压缩率。热导率优选地可为至少3W/mK、更优选地为至少5W/mK。以上关于密度、厚度和压缩率的特性描述同样可适用于此实施方案并且如同完全记载一样以引用的方式并入本文。ASTMD5470可用于测定在至少50KPa的接触压力下的上述热导率。在另一个实施方案中，上述密度可为不超过1.25g/cc。
下文公开可用于制备具有石墨化聚合物的石墨制品的各种方法。
一种用于制备石墨薄膜的方法可包括以下三个步骤：(1)提供聚合物薄膜，其中所选择的聚合物应为可石墨化的；(2)在限定的温度范围内在压力条件下热处理所述聚合物薄膜，以获得石墨薄膜；以及(3)将所述石墨薄膜卷起来。
在第一个步骤中，提供一种选自以下各项的聚合物薄膜：聚酰胺(PA)、聚亚苯基噁二唑、聚噁二唑(POD)、聚苯并噻唑(PBT)、聚苯并双噻唑(PBBT)、聚苯并噁唑(PBO)、聚苯并双噁唑(PBBO)、聚酰亚胺(非限制性实例为聚(均苯四酸酰亚胺))(PI)、聚(亚苯基异酞酰胺)(PPA)、聚苯并咪唑、聚苯并双咪唑、聚(亚苯基苯并咪唑)(PBI)、聚(亚苯基苯并双咪唑)(PPBI)、聚噻唑(PT)和聚(对亚苯基亚乙烯基)(PPV)及其组合。聚亚苯基噁二唑包括聚-亚苯基-1，3，4-噁二唑及其异构体。
在一个实施方案中，起始薄膜可具有多至400μm的厚度。起始薄膜的厚度的典型实例的范围可为25至200μm。
起始聚合物薄膜在不低于2400℃的最终处理温度下进行热处理。起始薄膜可在最终热处理之前进行预加热，以便碳化。例如，薄膜可以2℃至50℃/min的加热速率预加热至1000℃并且在所述温度下保持足以碳化的时间。预加热优选在惰性气体诸如氮气、氩气等中进行。在2400℃或更高温度下热处理的时间可根据所使用的实际温度和起始薄膜的类型而改变。
对于在超过1600℃的温度范围内的热处理，这可以在常压下或在承压时在上述类型的惰性气体中发生。可用于处理的压力的实例通常在0.1kg/cm2至50kg/cm2的范围内。可以允许形成石墨薄膜的方式各向同性地施加压力，所述石墨薄膜因气体生成而发泡，但发泡通常是整体均匀的。
可将石墨化薄膜卷曲。卷曲程序通常通过压延薄膜来进行。所述卷曲可在正常温度或升高温度下且任选地在不小于2kg/cm的线性压力或压区压力下进行。
另一种用于制备石墨薄膜的方法包括以下步骤：将聚合物薄膜保持在可通过施加电压直接起电的容器中；以及在容器中通过将电压施加于容器以便进行起电，从而使聚合物薄膜石墨化。这导致电压施加于聚合物薄膜并使所述聚合物薄膜起电，从而使得聚合物薄膜产生热量。因此，随着聚合物薄膜被碳化，电阻降低。随着电阻降低，电流流过聚合物薄膜。由于所得焦耳热，在原材料中生成热量。因此，薄膜内部和表面部分得以均匀地加热。可起电容器也从薄膜周围充分且均匀地加热所述薄膜。
碳化聚合物薄膜可通过在减压下或惰性气体下预加热聚合物薄膜(其为起始材料)来获得。预加热可在大约1000℃的温度下进行。例如，优选的是将所述聚合物薄膜在大约1000℃的温度下以10℃/分钟的升温速率加热30分钟。
所述容器还可包括在容器内部的碳粉。碳粉可用于填充容器与聚合物薄膜之间的空隙空间。这可进一步对聚合物薄膜增强导电性。因此碳粉可用作导体，将电能传导到聚合物薄膜。
除以上之外或可替代地，聚合物薄膜可被金属板或石墨板夹持，并且所夹持的聚合物薄膜因此被容器壁或底部以及任选的容器中包含的任何碳粉夹持并与其接触。除金属板或石墨板的重量之外，不需要向聚合物薄膜施加特定的附加压力。在包括碳粉的一个具体实施方案中，所述碳粉可完全遍及容器内部。换句话说，聚合物薄膜分别保持在可直接起电的容器中并且碳粉提供在可直接起电的容器的内部部分上及内部部分周围，以便填充聚合物薄膜与可起电容器之间的间隙。
可施加的电压可以是AC电压或DC电压。可使用的电流的实例为由于起电而流入聚合物薄膜的10mA或更大的电流。上述电流仅为示例性实施方案并且其他电流同样可适用。
另一种用于产生石墨薄膜的方法包括在2,000℃或更大温度下热处理聚合物薄膜，所述方法包括在热处理期间使聚合物薄膜与含有金属的物质接触的步骤。一种用于产生石墨薄膜的替代方法(其中聚合物薄膜在2,000℃或更大的温度下热处理)包括在热处理期间使碳化聚合物薄膜与含有金属的物质接触的步骤。用于产生石墨薄膜的另一种方法，其中使聚合物薄膜与容器接触并且在2,000℃或更大的温度下进行热处理，其中所述容器含有金属。所述容器可以是密闭容器。
短语“容器可以是密闭的”意指所述薄膜可在四侧或六侧被容器围绕，以使得聚合物薄膜和/或碳化的聚合物薄膜可与含有金属的物质充分接触。聚合物薄膜和/或碳化的聚合物薄膜周围的大气气体可随着温度增加而膨胀。优选的是确保有大气气体可逸散的位置。因此，在本发明中短语“容器可以是密闭的”并不意指容器处于完全密闭状态，在这种状态下容器因膨胀的大气气体压力而破坏。
上述金属可以是选自由以下各项组成的组的一种或多种金属：根据IUPAC(国际纯粹与应用化学联合会)无机化学命名法修订版(1989)的第4、5、6、7、8、9、10、11、12和13族元素诸如铝和硼；锂、铍、钠、镁、钾、钙、钡、硅、锗、硒、锡、铅和铋及其组合。另外所述金属可以是选自由以下各项组成的组的一种或多种金属：钛、钒、铬、锰、铁、钴、镍、铜、锌、锆、铌、钼、锝、钌、铑、钯、银、镉、铪、钽、钨、铼、锇、铱、铂、金、汞及其组合。
热处理可具有使聚合物薄膜碳化的步骤和使聚合物薄膜石墨化的步骤。碳化和石墨化可单独地或连续地进行。
碳化通过在减压下或在氮气中预加热作为起始材料的聚合物薄膜来进行。预加热通常在800℃至1,500℃的温度下进行。碳化的最高温度可在达到所述最高温度之后维持约30分钟至一个小时。例如，当薄膜以10℃/min的速率加热时，薄膜的温度可在1,000℃的温度范围内维持约30分钟。任选地，压力可施加在垂直于薄膜表面的方向上。
石墨化可通过一次性去除碳化的聚合物薄膜并且将所述薄膜转移到石墨化炉中来进行或者可自碳化连续地进行。石墨化在减压下或在惰性气体中进行。氩气或氦气适用于惰性气体。热处理温度可为至少2,000℃或更大。最终热处理温度优选地为2,400℃或更大、更优选地2,600℃或更大、且还更优选地2,800℃或更大。
热处理可通过将聚合物薄膜固定至容器来进行。所述容器可由石墨制成。在本文中石墨在广义上包括含有石墨作为主要组分的材料，程度为所述材料可加热至以上温度范围。石墨可以是例如各向同性石墨或挤压石墨。当重复使用石墨时，具有优异导电性、导热性和均匀性的各向同性石墨为优选的。容器可具有任何形状，诸如简单平板形状。容器还可具有圆柱形形状，并且聚合物薄膜可缠绕所述容器。容器的形状并不特别限定于可使聚合物薄膜与容器接触的程度。
使聚合物薄膜与由石墨制成的容器内部接触的方法(包括保持或固定薄膜的方法)可以是以下方法中的每一种：将聚合物薄膜夹持在石墨或金属板中并使薄膜与容器壁或底部接触的方法，而除板本身重量之外不向聚合物薄膜施加压力(其中聚合物薄膜可由容器保持或固定至所述容器)；以及将聚合物薄膜卷绕在圆柱形石墨容器上的方法。然而，制备制品的方法并不一定限定于这些方法。
聚合物薄膜可通过碳化和石墨化两个步骤进行石墨化。首先，碳化通常是指将聚合物薄膜热处理至1,000℃以将薄膜转化成含有碳作为主要组分的物质的一个过程。确切地说，当在分解温度下热处理聚合物薄膜时，键裂解并且分解的组分作为气体诸如二氧化碳、一氧化碳、氮气或氢气离去。当将薄膜热处理至1,000℃时，所述薄膜为含有碳作为主要组分的材料。其次，石墨化是指在2,800℃或更大温度下热处理碳质材料以将所述材料转化成具有许多堆叠的石墨层的结构的一个过程，其每个层具有彼此平面连接的芳环。
本文所述的材料可具有以下任一种或所有优点：低接触阻抗、优异贯通厚度热导率、高面内热导率和相对高的胶层厚度。一个优点是作为大面积热界面材料。材料的其他优点包括相比常规热界面材料更低的热阻抗、增加的压缩率和更高的面内热导率。
制品的应用可包括用作诸如消费电子产品、大型家用电器、汽车动力传动***、商用车辆或机动车辆、电信、热电子装置和工业设备等环境中的热界面。
以上描述意图使本领域技术人员能够实践本发明。它并不意图详细描述所有可能的变化和修改，这些变化和修改对于阅读本说明书的技术人员而言将是显而易见的。然而，所有这些修改和变化意图包括在由以下权利要求书所限定的本发明的范围内。
因此，尽管在此已描述了本发明的石墨制品的新且有用的应用和制备这些石墨制品的方法的具体实施方案，但是并不意味着可以将这些参考视为对本公开范围的限制，本公开的范围仅由以下权利要求书限定。以上所讨论的不同实施方案可以其任何组合来实践。

Claims (15)

1.一种包含石墨化聚合物的石墨制品，其具有至少75微米的厚度，所述石墨具有小于1.50g/cc的密度、在100KPa的接触压力下超过3％的压缩率和大致片状的形状。
2.如权利要求1所述的石墨制品，其中所述厚度包括多至500微米并且所述密度为小于1.00g/cc。
3.如权利要求2所述的石墨制品，其中所述压缩率包括至少10％。
4.如权利要求3所述的石墨制品，其还包含浓度为至少5重量％的掺杂物。
5.如权利要求4所述的石墨制品，其还包括表面穿孔。
6.如权利要求2所述的石墨制品，其具有在至少200KPa的接触压力下小于0.019(℃/W)的热阻率。
7.如权利要求6所述的石墨制品，其包括单片制品。
8.如权利要求6所述的石墨制品，其基本上由单个石墨片组成。
9.如权利要求8所述的石墨制品，其具有在所述制品的至少一个主表面上的粘合剂。
10.如权利要求8所述的石墨制品，其还包括形成所述制品的外层或内层的热塑性层。
11.如权利要求6所述的石墨制品，其没有超过一个石墨片。
12.一种热管理***，其包括如权利要求1所述的制品，所述制品的主表面具有与附接至所述***的热源的接触表面积基本上相似的接触表面积。
13.如权利要求12所述的热管理***，其还包括与所述石墨制品的第二主表面热接触的热消散元件。
14.一种制作电子装置的方法，其包括：
a.将包含石墨化聚合物且具有至少75微米厚度和小于1.50g/cc密度的石墨制品设置成与热源或热消散元件中的一个有效热接触；
b.将所述石墨制品设置成与在步骤(a)中未附接的所述热源或所述热消散元件中的另一者有效热接触；
从而以至少50KPa的接触压力将所述石墨制品压缩至少3％。
15.如权利要求14所述的方法，其中所述石墨制品被压缩至少10％。
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