CN105513955A - Semiconductor element etching solution and preparation method thereof - Google Patents
Semiconductor element etching solution and preparation method thereof Download PDFInfo
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- CN105513955A CN105513955A CN201510876027.1A CN201510876027A CN105513955A CN 105513955 A CN105513955 A CN 105513955A CN 201510876027 A CN201510876027 A CN 201510876027A CN 105513955 A CN105513955 A CN 105513955A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Abstract
The invention provides a semiconductor element etching solution and a preparation method thereof. The etching solution comprises the following components: iodine, sodium iodide, ammonium iodide, carboxymethyl chitosan, pentaerythritol, sorbitol, ammonium salt, n butanol, ethanol, vitamin C, BHT, potassium sorbate, and water. The preparation method comprises the steps of firstly, mixing up iodine, pentaerythritol, sorbitol, BHT, n butanol and ethanol and stirring the mixture for 5-10 minutes to obtain a solution A; secondly, mixing up sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium salt, vitamin, potassium sorbate and water and stirring the mixture for 5-10 minutes to obtain a solution B; thirdly, mixing up the solution A and the solution B, heating the mixed solution at 30-40 DEG C and stirring the solution 20-30 minutes to obtain the semiconductor element etching solution. According to the technical scheme of the invention, the etching solution is fast in etching speed, high in precision and strong in etching uniformity. The preparation method is simple, easy to control, easy in industrial production, and low in production cost.
Description
Technical field
The present invention relates to etching solution field, be specifically related to a kind of semiconductor element etching solution and preparation method thereof.
Background technology
Semiconductor element refers to that conductivity is between good conductor of electricity and insulator, utilizes semi-conducting material specific electrical properties to complete the electronic device of specific function.Along with the progress of science and technology, the application of semiconductor element is more and more extensive, and the quality of conductor etching directly determines the product quality of semiconductor entirety.The etching solution type used at present mainly contains six kinds: (1) acidic copper chloride (2) alkaline copper chloride (3) iron chloride (4) ammonium persulfate (5) sulfuric acid/chromic acid (6) sulfuric acid/hydrogen peroxide etching solution.Have certain temperature requirement during acid and alkaline copper chloride etching, general control is within the scope of 45 ~ 55 DEG C; Iron chloride etching solution needs shortcomings such as ceaselessly stirring.And most of semiconductor element is due to the particularity of its volume, more need a kind of etching speed soon, not easily lateral erosion, etching solution that precision is high come its processing.
Summary of the invention
the technical problem solved:the object of this invention is to provide that a kind of etching speed is fast, precision is high, not easily lateral erosion, semiconductor element etching solution that etch uniformity is strong, greatly can improve the qualification rate of final finished.
technical scheme:a kind of semiconductor element etching solution, comprises with parts by weight: iodine 1.5-3 part, sodium iodide 5-10 part, ammonium iodide 5-10 part, CMC 1-2 part, pentaerythrite 1-2 part, sorbierite 1-2 part, ammonium salt 2-5 part, n-butanol 10-20 part, ethanol 10-20 part, vitamin C 0.1-0.5 part, BHT0.1-0.2 part, potassium sorbate 0.1-0.2 part, water 5-10 part.
Preferred further, described a kind of semiconductor element etching solution, comprises with parts by weight: iodine 2-2.5 part, sodium iodide 6-9 part, ammonium iodide 6-9 part, CMC 1.2-1.8 part, pentaerythrite 1.2-1.8 part, sorbierite 1.2-1.8 part, ammonium salt 3-4 part, n-butanol 12-18 part, ethanol 12-18 part, vitamin C 0.2-0.4 part, BHT0.12-0.18 part, potassium sorbate 0.12-0.18 part, water 6-9 part.
The preparation method of above-mentioned semiconductor element etching solution comprises the following steps:
Step 1: by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 5-10 minute, obtain solution A;
Step 2: sodium iodide, ammonium iodide, CMC, ammonium salt, vitamin, potassium sorbate and water mix and blend are obtained solution B in 5-10 minute;
Step 3: by solution A and B mixing, be heated to 30-40 DEG C, stir 20-30 minute and get final product.
Preferred further, in step 1, mixing time is 6-9 minute.
Preferred further, in step 2, mixing time is 6-9 minute.
Preferred further, in step 3, heating-up temperature is 32-38 DEG C, and mixing time is 22-28 minute.
beneficial effect:semiconductor element etching solution etching speed of the present invention is fast, can improve etching efficiency, not only save time, and improve qualification rate; Not easily lateral erosion, can not make figure deformation or size is gone wrong; Etching solution etching precision of the present invention is high simultaneously, and etch uniformity is strong, and these advantages all substantially increase the quality of final finished.
Embodiment
Embodiment 1
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 1.5 parts, sodium iodide 5 parts, ammonium iodide 5 parts, CMC 1 part, pentaerythrite 1 part, sorbierite 1 part, ammonium carbonate 2 parts, n-butanol 10 parts, ethanol 10 parts, vitamin C 0.1 part, BHT0.1 part, potassium sorbate 0.1 part, 5 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 5 minutes, obtain solution A; Again sodium iodide, ammonium iodide, CMC, ammonium carbonate, vitamin, potassium sorbate and water mix and blend are obtained solution B in 5 minutes; By solution A and B mixing, be heated to 30 DEG C, stir 20 minutes and get final product.
Embodiment 2
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 2 parts, sodium iodide 6 parts, ammonium iodide 6 parts, CMC 1.2 parts, pentaerythrite 1.2 parts, sorbierite 1.2 parts, ammonium hydrogen sulfate 3 parts, n-butanol 12 parts, ethanol 12 parts, vitamin C 0.2 part, BHT0.12 part, potassium sorbate 0.12 part, 6 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 6 minutes, obtain solution A; Again sodium iodide, ammonium iodide, CMC, ammonium hydrogen sulfate, vitamin, potassium sorbate and water mix and blend are obtained solution B in 6 minutes; By solution A and B mixing, be heated to 32 DEG C, stir 22 minutes and get final product.
Embodiment 3
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 2.5 parts, sodium iodide 9 parts, ammonium iodide 9 parts, CMC 1.8 parts, pentaerythrite 1.8 parts, sorbierite 1.8 parts, ammonium chloride 4 parts, n-butanol 18 parts, ethanol 18 parts, vitamin C 0.4 part, BHT0.18 part, potassium sorbate 0.18 part, 9 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 9 minutes, obtain solution A; Again sodium iodide, ammonium iodide, CMC, ammonium chloride, vitamin, potassium sorbate and water mix and blend are obtained solution B in 9 minutes; By solution A and B mixing, be heated to 38 DEG C, stir 28 minutes and get final product.
Embodiment 4
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 2.2 parts, sodium iodide 7 parts, ammonium iodide 8 parts, CMC 1.5 parts, pentaerythrite 1.5 parts, sorbierite 1.5 parts, 3.5 parts, ammonium nitrate, n-butanol 15 parts, ethanol 15 parts, vitamin C 0.3 part, BHT0.15 part, potassium sorbate 0.15 part, 7 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 7 minutes, obtain solution A; Again sodium iodide, ammonium iodide, CMC, ammonium nitrate, vitamin, potassium sorbate and water mix and blend are obtained solution B in 7 minutes; By solution A and B mixing, be heated to 35 DEG C, stir 25 minutes and get final product.
Embodiment 5
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 3 parts, sodium iodide 10 parts, ammonium iodide 10 parts, CMC 2 parts, pentaerythrite 2 parts, sorbierite 2 parts, ammonium bromide 5 parts, n-butanol 20 parts, ethanol 20 parts, vitamin C 0.5 part, BHT0.2 part, potassium sorbate 0.2 part, 10 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 10 minutes, obtain solution A; Again sodium iodide, ammonium iodide, CMC, ammonium bromide, vitamin, potassium sorbate and water mix and blend are obtained solution B in 10 minutes; By solution A and B mixing, be heated to 40 DEG C, stir 30 minutes and get final product.
Comparative example 1
The difference of the present embodiment and embodiment 5 is not containing CMC.Specifically:
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 3 parts, sodium iodide 10 parts, ammonium iodide 10 parts, pentaerythrite 2 parts, sorbierite 2 parts, ammonium bromide 5 parts, n-butanol 20 parts, ethanol 20 parts, vitamin C 0.5 part, BHT0.2 part, potassium sorbate 0.2 part, 10 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 10 minutes, obtain solution A; Again sodium iodide, ammonium iodide, ammonium bromide, vitamin, potassium sorbate and water mix and blend are obtained solution B in 10 minutes; By solution A and B mixing, be heated to 40 DEG C, stir 30 minutes and get final product.
Comparative example 2
The difference of the present embodiment and embodiment 5 is not containing n-butanol and ethanol.Specifically:
A kind of semiconductor element etching solution, comprises with parts by weight: iodine 3 parts, sodium iodide 10 parts, ammonium iodide 10 parts, CMC 2 parts, pentaerythrite 2 parts, sorbierite 2 parts, ammonium bromide 5 parts, vitamin C 0.5 part, BHT0.2 part, potassium sorbate 0.2 part, 10 parts, water.
The preparation method of above-mentioned semiconductor element etching solution is: first by iodine, pentaerythrite, sorbierite and BHT mix and blend 10 minutes, obtain solution A; Again sodium iodide, ammonium iodide, CMC, ammonium bromide, vitamin, potassium sorbate and water mix and blend are obtained solution B in 10 minutes; By solution A and B mixing, be heated to 40 DEG C, stir 30 minutes and get final product.
Each embodiment and comparative example are compared, comparing result is as following table 1:
The performance index of table 1 etching solution
| Example | The index (side etching length/layer gold thickness) of lateral erosion | Etching speed (μm/s) | Uniformity |
| Embodiment 1 | 1.1 | 0.139 | Better |
| Embodiment 2 | 0.9 | 0.149 | Better |
| Embodiment 3 | 0.6 | 0.161 | Good |
| Embodiment 4 | 0.8 | 0.153 | Better |
| Embodiment 5 | 1.1 | 0.148 | Better |
| Comparative example 1 | 7.2 | 0.138 | Generally |
| Comparative example 2 | 2.5 | 0.129 | Difference |
Note: this etching speed for be etching to copper
As known from Table 1, the lateral erosion index of embodiments of the invention 1-5 is low, produces lateral erosion hardly, and etching speed is fast and etch uniformity good, especially best with embodiment 3.Compare with comparative example, can see that the lateral erosion index of comparative example 1 is high, uniformity is general, may be that it can improve the affinity of light actuating resisting corrosion film as surfactant owing to can not reduce precision containing CMC.And compare with comparative example 2, can see that its lateral erosion speed is comparatively slow, lateral erosion lack of homogeneity, may be because n-butanol and ethanol can reduce surface tension, reduces etching speed difference, make etching evenly.In addition, every effect of the etching solution of embodiment 3 gained is all best, is optimum embodiment of the present invention.
Claims (7)
1. a semiconductor element etching solution, is characterized in that: comprise with parts by weight: iodine 1.5-3 part, sodium iodide 5-10 part, ammonium iodide 5-10 part, CMC 1-2 part, pentaerythrite 1-2 part, sorbierite 1-2 part, ammonium salt 2-5 part, n-butanol 10-20 part, ethanol 10-20 part, vitamin C 0.1-0.5 part, BHT0.1-0.2 part, potassium sorbate 0.1-0.2 part, water 5-10 part.
2. a kind of semiconductor element etching solution according to claim 1, is characterized in that: comprise with parts by weight: iodine 2-2.5 part, sodium iodide 6-9 part, ammonium iodide 6-9 part, CMC 1.2-1.8 part, pentaerythrite 1.2-1.8 part, sorbierite 1.2-1.8 part, ammonium salt 3-4 part, n-butanol 12-18 part, ethanol 12-18 part, vitamin C 0.2-0.4 part, BHT0.12-0.18 part, potassium sorbate 0.12-0.18 part, water 6-9 part.
3. a kind of semiconductor element etching solution as claimed in claim 1, is characterized in that: described ammonium salt is ammonium carbonate, carbonic hydroammonium, ammonium chloride, ammonium hydrogen sulfate, ammonium iodide, ammonium nitrate, ammonium fluoride, ammonium sulfate, ammonium bromide etc.
4. the preparation method of a kind of semiconductor element etching solution described in any one of claim 1 to 2, is characterized in that: comprise the following steps:
Step 1: by iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol mix and blend 5-10 minute, obtain solution A;
Step 2: sodium iodide, ammonium iodide, CMC, ammonium salt, vitamin, potassium sorbate and water mix and blend are obtained solution B in 5-10 minute;
Step 3: by solution A and B mixing, be heated to 30-40 DEG C, stir 20-30 minute and get final product.
5. the preparation method of a kind of semiconductor element etching solution according to claim 4, is characterized in that: in described step 1, mixing time is 6-9 minute.
6. the preparation method of a kind of semiconductor element etching solution according to claim 4, is characterized in that: in described step 2, mixing time is 6-9 minute.
7. the preparation method of a kind of semiconductor element etching solution according to claim 4, it is characterized in that: in described step 3, heating-up temperature is 32-38 DEG C, mixing time is 22-28 minute.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115505389A (en) * | 2022-08-22 | 2022-12-23 | 福建天甫电子材料有限公司 | ITO etching solution and use method thereof |
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| JP2003229420A (en) * | 2001-11-28 | 2003-08-15 | Mitsubishi Chemicals Corp | Etching liquid |
| US20070204789A1 (en) * | 2004-03-29 | 2007-09-06 | Hideki Sato | Method For Evaluating Crystal Defects Of Silicon Wafer |
| KR20080014766A (en) * | 2005-05-11 | 2008-02-14 | 야마사 쇼유 가부시키가이샤 | Method of stabilizing pulmonary surfactant protein |
| CN103572269A (en) * | 2012-08-06 | 2014-02-12 | 三星电机株式会社 | Method for manufacturing printed circuit board |
| CN103710704A (en) * | 2012-09-28 | 2014-04-09 | 关东化学株式会社 | Iodine-based etching solution and etching method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003229420A (en) * | 2001-11-28 | 2003-08-15 | Mitsubishi Chemicals Corp | Etching liquid |
| US20070204789A1 (en) * | 2004-03-29 | 2007-09-06 | Hideki Sato | Method For Evaluating Crystal Defects Of Silicon Wafer |
| KR20080014766A (en) * | 2005-05-11 | 2008-02-14 | 야마사 쇼유 가부시키가이샤 | Method of stabilizing pulmonary surfactant protein |
| CN103572269A (en) * | 2012-08-06 | 2014-02-12 | 三星电机株式会社 | Method for manufacturing printed circuit board |
| CN103710704A (en) * | 2012-09-28 | 2014-04-09 | 关东化学株式会社 | Iodine-based etching solution and etching method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115505389A (en) * | 2022-08-22 | 2022-12-23 | 福建天甫电子材料有限公司 | ITO etching solution and use method thereof |
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Effective date of registration: 20190404 Address after: 221000 Shenchang, Gulou District, Xuzhou City, Jiangsu Province (A2 307, Huaihai Cultural and Technological Industrial Park) Patentee after: Shengfan Intellectual Property Co., Ltd. Address before: 215000 B228 3, 999 Pearl River Road, Wuzhong District, Suzhou, Jiangsu. Patentee before: SUZHOU XINDEJIE ELECTRONICS CO., LTD. |
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Effective date of registration: 20190710 Address after: 221600 South Ring Road (Fengpei Road) North of Peixian County, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Navigation Industry Co., Ltd. Address before: 221000 Shenchang, Gulou District, Xuzhou City, Jiangsu Province (A2 307, Huaihai Cultural and Technological Industrial Park) Patentee before: Shengfan Intellectual Property Co., Ltd. |