CN105513955B - A kind of semiconductor element etching solution and preparation method thereof - Google Patents
A kind of semiconductor element etching solution and preparation method thereof Download PDFInfo
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- CN105513955B CN105513955B CN201510876027.1A CN201510876027A CN105513955B CN 105513955 B CN105513955 B CN 105513955B CN 201510876027 A CN201510876027 A CN 201510876027A CN 105513955 B CN105513955 B CN 105513955B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Abstract
The invention provides a kind of semiconductor element etching solution and preparation method thereof.Etching solution component includes：Iodine, sodium iodide, ammonium iodide, carboxymethyl chitosan, pentaerythrite, sorbierite, ammonium salt, n-butanol, ethanol, vitamin C, BHT, potassium sorbate, water.Its preparation method obtains solution A first to mix iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol 5 10 minutes；Sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium salt, vitamin, potassium sorbate and water are mixed into 5 10 minutes to obtain solution B；Solution A and B are mixed, are heated to 30 40 DEG C, stirring produces for 20 30 minutes.The etching solution etching speed of the present invention is fast, and precision is high, and etch uniformity is strong；It is easy to control and preparation method is simple, it is easy to industrialized production, production cost is low.
Description
Technical field
The present invention relates to etching solution field, and in particular to a kind of semiconductor element etching solution and preparation method thereof.
Background technology
Semiconductor element refers to electric conductivity between good conductor of electricity and insulator, utilizes semi-conducting material specific electrical properties
To complete the electronic device of specific function.With the development of science and technology the application of semiconductor element is more and more extensive, and semiconductor loses
The quality at quarter directly determines the overall product quality of semiconductor.The etching solution type used at present mainly has six kinds：⑴
Acidic copper chloride (2) alkaline copper chloride (3) iron chloride (4) ammonium persulfate (5) sulfuric acid/chromic acid (6) sulfuric acid/hydrogen peroxide etching solution.It is acid and
There is certain temperature requirement during alkaline copper chloride etching, general control is in the range of 45 ~ 55 DEG C；Iron chloride etching solution needs not stop
The shortcomings of ground stirs.And most of semiconductor element is due to the particularity of its volume, with greater need for a kind of etching speed it is fast, be not easy side
Erosion, precision high etching solution are processed to it.
The content of the invention
Technical problems to be solved：It is an object of the invention to provide a kind of etching speed is fast, precision is high, is not easy lateral erosion, erosion
The strong semiconductor element etching solution of uniformity is carved, the qualification rate of final finished can be greatly improved.
Technical scheme：A kind of semiconductor element etching solution, includes in parts by weight：Iodine 1.5-3 parts, sodium iodide 5-10 parts,
Ammonium iodide 5-10 parts, carboxymethyl chitosan 1-2 parts, pentaerythrite 1-2 parts, sorbierite 1-2 parts, ammonium salt 2-5 parts, n-butanol 10-
20 parts, ethanol 10-20 parts, vitamin C 0.1-0.5 parts, BHT0.1-0.2 parts, potassium sorbate 0.1-0.2 parts, water 5-10 parts.
It is further preferred that a kind of described semiconductor element etching solution, includes in parts by weight：Iodine 2-2.5 parts, iodate
Sodium 6-9 parts, ammonium iodide 6-9 parts, carboxymethyl chitosan 1.2-1.8 parts, pentaerythrite 1.2-1.8 parts, sorbierite 1.2-1.8 parts,
Ammonium salt 3-4 parts, n-butanol 12-18 parts, ethanol 12-18 parts, vitamin C 0.2-0.4 parts, BHT0.12-0.18 parts, potassium sorbate
0.12-0.18 parts, water 6-9 parts.
The preparation method of above-mentioned semiconductor element etching solution comprises the following steps：
Step 1：Iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol are mixed into 5-10 minutes, obtain solution A；
Step 2：Sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium salt, vitamin, potassium sorbate and water are mixed into 5-
Obtain solution B within 10 minutes；
Step 3：Solution A and B are mixed, are heated to 30-40 DEG C, stirring 20-30 minutes produce.
It is further preferred that mixing time is 6-9 minutes in step 1.
It is further preferred that mixing time is 6-9 minutes in step 2.
It is further preferred that heating-up temperature is 32-38 DEG C in step 3, mixing time is 22-28 minutes.
Beneficial effect：The semiconductor element etching solution etching speed of the present invention is fast, etching efficiency can be improved, when not only saving
Between, and improve qualification rate；Lateral erosion is not easy, figure deformation will not be made or size is gone wrong；Etching solution of the present invention simultaneously
It is high to etch precision, etch uniformity is strong, and these advantages all substantially increase the quality of final finished.
Embodiment
Embodiment 1
A kind of semiconductor element etching solution, includes in parts by weight：1.5 parts of iodine, 5 parts of sodium iodide, 5 parts of ammonium iodide, carboxylic first
1 part of base enclosure glycan, 1 part of pentaerythrite, 1 part of sorbierite, 2 parts of ammonium carbonate, 10 parts of n-butanol, 10 parts of ethanol, 0.1 part of vitamin C,
BHT0.1 parts, 0.1 part of potassium sorbate, 5 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First by iodine, pentaerythrite, sorbierite, BHT, n-butanol and
Ethanol mixes 5 minutes, obtains solution A；Again by sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium carbonate, vitamin, sorbic acid
Potassium and water mix 5 minutes to obtain solution B；Solution A and B are mixed, are heated to 30 DEG C, stirring produces for 20 minutes.
Embodiment 2
A kind of semiconductor element etching solution, includes in parts by weight：2 parts of iodine, 6 parts of sodium iodide, 6 parts of ammonium iodide, carboxymethyl
1.2 parts of chitosan, 1.2 parts of pentaerythrite, 1.2 parts of sorbierite, 3 parts of ammonium hydrogen sulfate, 12 parts of n-butanol, 12 parts of ethanol, vitamin
C0.2 parts, BHT0.12 parts, 0.12 part of potassium sorbate, 6 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First by iodine, pentaerythrite, sorbierite, BHT, n-butanol and
Ethanol mixes 6 minutes, obtains solution A；Again by sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium hydrogen sulfate, vitamin, sorb
Sour potassium and water mix 6 minutes to obtain solution B；Solution A and B are mixed, are heated to 32 DEG C, stirring produces for 22 minutes.
Embodiment 3
A kind of semiconductor element etching solution, includes in parts by weight：2.5 parts of iodine, 9 parts of sodium iodide, 9 parts of ammonium iodide, carboxylic first
1.8 parts of base enclosure glycan, 1.8 parts of pentaerythrite, 1.8 parts of sorbierite, 4 parts of ammonium chloride, 18 parts of n-butanol, 18 parts of ethanol, vitamin
C0.4 parts, BHT0.18 parts, 0.18 part of potassium sorbate, 9 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First by iodine, pentaerythrite, sorbierite, BHT, n-butanol and
Ethanol mixes 9 minutes, obtains solution A；Again by sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium chloride, vitamin, sorbic acid
Potassium and water mix 9 minutes to obtain solution B；Solution A and B are mixed, are heated to 38 DEG C, stirring produces for 28 minutes.
Embodiment 4
A kind of semiconductor element etching solution, includes in parts by weight：2.2 parts of iodine, 7 parts of sodium iodide, 8 parts of ammonium iodide, carboxylic first
1.5 parts of base enclosure glycan, 1.5 parts of pentaerythrite, 1.5 parts of sorbierite, 3.5 parts of ammonium nitrate, 15 parts of n-butanol, 15 parts of ethanol, dimension life
Plain C0.3 parts, BHT0.15 parts, 0.15 part of potassium sorbate, 7 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First by iodine, pentaerythrite, sorbierite, BHT, n-butanol and
Ethanol mixes 7 minutes, obtains solution A；Again by sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium nitrate, vitamin, sorbic acid
Potassium and water mix 7 minutes to obtain solution B；Solution A and B are mixed, are heated to 35 DEG C, stirring produces for 25 minutes.
Embodiment 5
A kind of semiconductor element etching solution, includes in parts by weight：3 parts of iodine, 10 parts of sodium iodide, 10 parts of ammonium iodide, carboxylic first
2 parts of base enclosure glycan, 2 parts of pentaerythrite, 2 parts of sorbierite, 5 parts of ammonium bromide, 20 parts of n-butanol, 20 parts of ethanol, 0.5 part of vitamin C,
BHT0.2 parts, 0.2 part of potassium sorbate, 10 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First by iodine, pentaerythrite, sorbierite, BHT, n-butanol and
Ethanol mixes 10 minutes, obtains solution A；Again by sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium bromide, vitamin, sorb
Sour potassium and water mix 10 minutes to obtain solution B；Solution A and B are mixed, are heated to 40 DEG C, stirring produces for 30 minutes.
Comparative example 1
The present embodiment and the difference of embodiment 5 are to be free of carboxymethyl chitosan.Specifically：
A kind of semiconductor element etching solution, includes in parts by weight：3 parts of iodine, 10 parts of sodium iodide, 10 parts of ammonium iodide, season penta
2 parts of tetrol, 2 parts of sorbierite, 5 parts of ammonium bromide, 20 parts of n-butanol, 20 parts of ethanol, 0.5 part of vitamin C, BHT0.2 parts, sorbic acid
0.2 part of potassium, 10 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First by iodine, pentaerythrite, sorbierite, BHT, n-butanol and
Ethanol mixes 10 minutes, obtains solution A；Sodium iodide, ammonium iodide, ammonium bromide, vitamin, potassium sorbate and water are mixed again and stirred
Mix 10 minutes to obtain solution B；Solution A and B are mixed, are heated to 40 DEG C, stirring produces for 30 minutes.
Comparative example 2
The present embodiment and the difference of embodiment 5 are not containing n-butanol and ethanol.Specifically：
A kind of semiconductor element etching solution, includes in parts by weight：3 parts of iodine, 10 parts of sodium iodide, 10 parts of ammonium iodide, carboxylic first
2 parts of base enclosure glycan, 2 parts of pentaerythrite, 2 parts of sorbierite, 5 parts of ammonium bromide, 0.5 part of vitamin C, BHT0.2 parts, potassium sorbate 0.2
Part, 10 parts of water.
The preparation method of above-mentioned semiconductor element etching solution is：First iodine, pentaerythrite, sorbierite and BHT are mixed
10 minutes, obtain solution A；Sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium bromide, vitamin, potassium sorbate and water are mixed again
Stirring obtains solution B in 10 minutes；Solution A and B are mixed, are heated to 40 DEG C, stirring produces for 30 minutes.
Each embodiment is compared with comparative example, comparing result such as table 1 below：
The performance indications of the etching solution of table 1
| Example | The index of lateral erosion（Side etching length/layer gold thickness） | Etching speed（µm/s） | Uniformity |
| Embodiment 1 | 1.1 | 0.139 | Preferably |
| Embodiment 2 | 0.9 | 0.149 | Preferably |
| Embodiment 3 | 0.6 | 0.161 | It is good |
| Embodiment 4 | 0.8 | 0.153 | Preferably |
| Embodiment 5 | 1.1 | 0.148 | Preferably |
| Comparative example 1 | 7.2 | 0.138 | Typically |
| Comparative example 2 | 2.5 | 0.129 | Difference |
Note：This etching speed is directed to the etching to copper
As known from Table 1, embodiments of the invention 1-5 lateral erosion index is low, is nearly free from lateral erosion, etching speed it is fast and
Etch uniformity is good, especially optimal with embodiment 3.Compared with comparative example, it can be seen that the lateral erosion index of comparative example 1 is high, uniformly
Property it is general, it may be possible to due to without carboxymethyl chitosan can reduce but precision, it can improve photic as surfactant
The affinity of agent film against corrosion.And compared with comparative example 2, it can be seen that its lateral erosion speed is slower, lateral erosion lack of homogeneity, it may be possible to
Because n-butanol and ethanol can reduce surface tension, etching speed difference is reduced, makes etching evenly.In addition, the institute of embodiment 3
Every effect of the etching solution obtained is all optimal, is most highly preferred embodiment of the invention.
Claims (2)
- A kind of 1. semiconductor element etching solution, it is characterised in that：Include in parts by weight：Iodine 1.5-3 parts, sodium iodide 5-10 parts, Ammonium iodide 5-10 parts, carboxymethyl chitosan 1-2 parts, pentaerythrite 1-2 parts, sorbierite 1-2 parts, ammonium salt 2-5 parts, n-butanol 10- 20 parts, ethanol 10-20 parts, vitamin C 0.1-0.5 parts, BHT 0.1-0.2 parts, potassium sorbate 0.1-0.2 parts, water 5-10 parts, The ammonium salt is one kind in ammonium carbonate, ammonium hydrogen carbonate, ammonium chloride, ammonium hydrogen sulfate, ammonium nitrate, ammonium fluoride, ammonium sulfate, ammonium bromide It is or several；Preparation process is as follows：Step 1：Iodine, pentaerythrite, sorbierite, BHT, n-butanol and ethanol are mixed into 5-10 minutes, obtain solution A；Step 2：Sodium iodide, ammonium iodide, carboxymethyl chitosan, ammonium salt, vitamin, potassium sorbate and water are mixed 5-10 points Clock obtains solution B；Step 3：Solution A and B are mixed, are heated to 30-40 DEG C, stirring 20-30 minutes produce.
- A kind of 2. semiconductor element etching solution according to claim 1, it is characterised in that：Include in parts by weight：Iodine 2- 2.5 parts, sodium iodide 6-9 parts, ammonium iodide 6-9 parts, carboxymethyl chitosan 1.2-1.8 parts, pentaerythrite 1.2-1.8 parts, sorbierite 1.2-1.8 parts, ammonium salt 3-4 parts, n-butanol 12-18 parts, ethanol 12-18 parts, vitamin C 0.2-0.4 parts, BHT 0.12-0.18 Part, potassium sorbate 0.12-0 .18 parts, water 6-9 parts.
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| CN103710704A (en) * | 2012-09-28 | 2014-04-09 | 关东化学株式会社 | Iodine-based etching solution and etching method |
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| CN101171514B (en) * | 2005-05-11 | 2011-07-20 | 雅玛山酱油株式会社 | Method of stabilizing pulmonary surfactant protein |
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Effective date of registration: 20190710 Address after: 221600 South Ring Road (Fengpei Road) North of Peixian County, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Navigation Industry Co., Ltd. Address before: 221000 Shenchang, Gulou District, Xuzhou City, Jiangsu Province (A2 307, Huaihai Cultural and Technological Industrial Park) Patentee before: Shengfan Intellectual Property Co., Ltd. |