CN105506737B - 一种非化学计量比氧化铌多晶镀膜材料及其生长技术 - Google Patents
一种非化学计量比氧化铌多晶镀膜材料及其生长技术 Download PDFInfo
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- CN105506737B CN105506737B CN201511008695.9A CN201511008695A CN105506737B CN 105506737 B CN105506737 B CN 105506737B CN 201511008695 A CN201511008695 A CN 201511008695A CN 105506737 B CN105506737 B CN 105506737B
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- crucible
- coating materials
- niobium oxide
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- 239000000463 material Substances 0.000 title claims abstract description 29
- 229910000484 niobium oxide Inorganic materials 0.000 title claims abstract description 21
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 238000000576 coating method Methods 0.000 title claims abstract description 18
- 239000011248 coating agent Substances 0.000 title claims abstract description 17
- 238000005516 engineering process Methods 0.000 title description 4
- 239000010955 niobium Substances 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 21
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000007787 solid Substances 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000004570 mortar (masonry) Substances 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052571 earthenware Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (1)
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CN201511008695.9A CN105506737B (zh) | 2015-12-28 | 2015-12-28 | 一种非化学计量比氧化铌多晶镀膜材料及其生长技术 |
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CN201511008695.9A CN105506737B (zh) | 2015-12-28 | 2015-12-28 | 一种非化学计量比氧化铌多晶镀膜材料及其生长技术 |
Publications (2)
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CN105506737A CN105506737A (zh) | 2016-04-20 |
CN105506737B true CN105506737B (zh) | 2018-02-09 |
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CN115142015B (zh) * | 2021-12-14 | 2024-04-30 | 常州瞻驰光电科技股份有限公司 | 一种高吸收光学镀膜材料及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101280456A (zh) * | 2007-12-28 | 2008-10-08 | 上海晶生实业有限公司 | 五氧化三钛晶体的坩埚下降法生长方法 |
CN101636518A (zh) * | 2007-03-30 | 2010-01-27 | 富士钛工业株式会社 | 蒸镀材料及利用该材料制得的光学薄膜 |
CN102659405A (zh) * | 2012-04-06 | 2012-09-12 | 西北稀有金属材料研究院 | 高密度氧化铌溅射靶材的制备方法 |
CN103045995A (zh) * | 2012-12-19 | 2013-04-17 | 西北稀有金属材料研究院 | 一种氧化铌旋转靶材及其制备方法 |
CN103806100A (zh) * | 2014-02-12 | 2014-05-21 | 常州瞻驰光电科技有限公司 | 一种五氧化三钛多晶的垂直温梯法生长方法 |
CN104389021A (zh) * | 2014-11-06 | 2015-03-04 | 常州瞻驰光电科技有限公司 | 非化学计量比钛酸镧多晶镀膜材料及其生长技术 |
CN104651791A (zh) * | 2015-02-18 | 2015-05-27 | 南京汇金锦元光电材料有限公司 | 节能型柔性透明导电薄膜及其制备方法 |
CN105074046A (zh) * | 2013-02-26 | 2015-11-18 | 三菱综合材料株式会社 | 氧化铌溅射靶、其制造方法及氧化铌膜 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4670097B2 (ja) * | 2005-04-27 | 2011-04-13 | Agcセラミックス株式会社 | ターゲットおよび該ターゲットによる高屈折率膜の製造方法 |
JP2015034313A (ja) * | 2013-08-08 | 2015-02-19 | キヤノン株式会社 | 分割型複合スパッタリングターゲットおよびスパッタリング成膜方法 |
-
2015
- 2015-12-28 CN CN201511008695.9A patent/CN105506737B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101636518A (zh) * | 2007-03-30 | 2010-01-27 | 富士钛工业株式会社 | 蒸镀材料及利用该材料制得的光学薄膜 |
CN101280456A (zh) * | 2007-12-28 | 2008-10-08 | 上海晶生实业有限公司 | 五氧化三钛晶体的坩埚下降法生长方法 |
CN102659405A (zh) * | 2012-04-06 | 2012-09-12 | 西北稀有金属材料研究院 | 高密度氧化铌溅射靶材的制备方法 |
CN103045995A (zh) * | 2012-12-19 | 2013-04-17 | 西北稀有金属材料研究院 | 一种氧化铌旋转靶材及其制备方法 |
CN105074046A (zh) * | 2013-02-26 | 2015-11-18 | 三菱综合材料株式会社 | 氧化铌溅射靶、其制造方法及氧化铌膜 |
CN103806100A (zh) * | 2014-02-12 | 2014-05-21 | 常州瞻驰光电科技有限公司 | 一种五氧化三钛多晶的垂直温梯法生长方法 |
CN104389021A (zh) * | 2014-11-06 | 2015-03-04 | 常州瞻驰光电科技有限公司 | 非化学计量比钛酸镧多晶镀膜材料及其生长技术 |
CN104651791A (zh) * | 2015-02-18 | 2015-05-27 | 南京汇金锦元光电材料有限公司 | 节能型柔性透明导电薄膜及其制备方法 |
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Address after: 213000 Jiangsu province Changzhou Tenglong Economic Development Zone Wujin Road No. 2 Patentee after: CHANGZHOU PROSRUN PHOTOELECTRIC TECHNOLOGY CO.,LTD. Address before: 213000 Jiangsu province Changzhou Tenglong Economic Development Zone Wujin Road No. 2 Patentee before: CHANGZHOU ZHAN CHI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
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Address after: 213000 Jiangsu province Changzhou Tenglong Economic Development Zone Wujin Road No. 2 Patentee after: CHANGZHOU PROSRUN PHOTOELECTRIC TECHNOLOGY CO.,LTD. Address before: 213000 Jiangsu province Changzhou Tenglong Economic Development Zone Wujin Road No. 2 Patentee before: CHANGZHOU ZHAN CHI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A non stoichiometric niobium oxide polycrystalline coating material and its growth technology Effective date of registration: 20231201 Granted publication date: 20180209 Pledgee: China Construction Bank Corporation Changzhou Zhonglou sub branch Pledgor: CHANGZHOU PROSRUN PHOTOELECTRIC TECHNOLOGY CO.,LTD. Registration number: Y2023980068350 |