CN105489229A - 具有在双铁磁自由层层压之间的正耦合的传感器 - Google Patents
具有在双铁磁自由层层压之间的正耦合的传感器 Download PDFInfo
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Abstract
一种磁传感器包括不被磁性地钉扎的第一铁磁自由层和第二铁磁自由层以及布置在其之间的一个非磁间隔层。该第一铁磁自由层包含第一多个铁磁子层，所述第一多个铁磁子层包括与该非磁间隔层相接触的第一钴铁子层的以及与该非磁间隔层不接触的第一非晶钴硼子层。该第二铁磁自由层包含第二多个铁磁子层，所述第二多个铁磁子层包括与该非磁间隔层相接触的第二钴铁子层以及与该非磁间隔层不接触的第二非晶钴硼子层。该第一钴铁子层和第二钴铁子层中的每一个具有组成Co(100-x)Fe(x)，其中x在10到90原子百分比的范围内。
Description
技术领域
信息存储设备用于检索和/或存储在计算机或其他消费者电子设备中的数据。磁硬盘驱动器是信息存储设备的一个示例，信息存储设备包括一个或多个可以进行读取和写入两个操作的磁头，而其他信息存储设备还包括磁头-有时包括不能进行写入的磁头。在此可以进行读取的磁头可以被称为“读取磁头”，即使它包括其他结构和功能，诸如用于写入的转换器，加热器，微致动器，电子研磨向导，激光二极管等。
背景技术
在现代的磁硬盘驱动设备中，每一个磁头是磁头万向架组件(HGA)的一个子组件，该磁头万向架组件一般包括带有层压弯曲部分(flexure)的悬挂组件以便将电信号输送到磁头并输送来自磁头的电信号。进而，该HGA是头堆组件(HSA)的一个子组件，该头堆组件一般包括多个HGA，致动器以及柔性印刷电路。该多个HGA附接至该致动器的各种臂。
当前读取磁头一般包括读取传感器(例如隧道磁阻或所谓的“巨”磁阻读取传感器)，将该读取传感器与感应写入转换器合并以便达到从记录介质(例如盘或带)读取/向记录介质写入。由于来自记录介质的由外部施加的磁场，该读取传感器一般包括铁磁“自由层”，该铁磁自由层具有相对于铁磁“被钉扎层”发生变化的磁定向。该被钉扎层的磁定向被固定或被钉扎，以使得自由层的磁定向的变化实际上是自由层以及被钉扎层的相对磁定向的变化。典型地，在巨磁阻(GMR)磁头的情况下，该自由层与该被钉扎层相隔一个非磁金属间隔层。典型地，在隧道磁阻(TMR)磁头的情况下，该自由层与该被钉扎层相隔一个绝缘以及一般为陶瓷的阻挡层。
近年来，由于工业上对具有提高的灵敏度的读取传感器的需要，已经产生了对具有双(或更多)自由层的读取传感器的更多的兴趣，该双自由层由间隔层或阻挡层隔开。在这种读取传感器中，每一自由层的磁定向可以被偏置以使得它响应于来自记录介质的由外部施加的磁场，与间隔层或阻挡层的另一侧上的自由层的磁定向反向旋转。这种反向旋转被称为所谓的“剪刀”操作模式。
然而，这种双自由层读取传感器的性能(例如磁阻比)取决于自由层之间的耦合、它们的组成以及它们的内部结构。因此，本领域中需要一种改进的自由层组成以及结构，这种组成和结构可以提供或改进所期望的自由层耦合和/或另外提高双自由层读取传感器的性能。
附图说明
图1是能够包括本发明实施例的盘驱动器的顶部透视图。
图2是能够包括本发明实施例的盘驱动器磁头致动器的透视图。
图3是能够包括本发明实施例的HGA的底部透视图。
图4是能够包括本发明实施例的双自由层读取传感器及相关的磁偏置结构的图示。
图5描绘了根据本发明实施例的双自由层传感器层压。
图6描绘了根据本发明另一实施例的双自由层传感器层压。
图7描绘了根据本发明另一实施例的双自由层传感器层压。
具体实施方式
图1是能够包括本发明的实施例的盘驱动器100的顶部透视图。盘驱动器100包括盘驱动器底座102以及两个环形磁盘104。盘驱动器100还包括可旋转地安装在盘驱动器底座102上的转轴106以用于旋转盘104。盘104的旋转设定气流通过再循环过滤器108。在其他实施例中，盘驱动器100可以具有仅仅一个单盘，或者可替代地，超过两个盘。
盘驱动器100还包括可旋转地安装在盘驱动器底座102上的致动器116。音圈电机112使致动器116在限定的角范围内旋转以使得至少一个磁头万向架组件(HGA)114相对于一个或多个信息迹线被期望地定位于盘104的相对应的一个盘上。每一个HGA114优选地包括用于从盘104中的一个盘进行读取/向盘104中的一个盘进行写入的读取磁头150。致动器116偶尔可能在所限定的角范围内的极端角位置处被锁120锁定。
在图1的实施例中，致动器116包括三条臂，其上附接有四个HGA114，每一个HGA对于两个盘104中的一个盘的一个面。然而，在其他实施例中，取决于所包括的盘104的数量以及盘驱动器100是否被解耦，更少或更多的HGA114可以被包括。将来自于/到HGA114的电信号经由包括柔性电缆122(优选地包括前置放大器电路)以及柔性电缆架124的柔性印刷电路被输送到其他驱动电子元件。
图2是盘驱动器头致动器210的透视图，其具有布置在盘204的相对侧的两条臂213，214(示出在假想线中)。致动器臂213，214中的每一条致动器臂支持并将HGA217，218中的其中一个定位在盘204的两个相对的主表面中的每个主表面上。然而，还考虑了解耦的盘驱动器，其具有比主要盘表面更少的HGA。
图3是能够包括本发明实施例的HGA300的底部透视图。HGA300包括负荷梁302以及用于从磁盘(例如图1中的盘104)读取并向磁盘写入数据的读取磁头310。图3中的读取磁头310包括具有空气承载表面(标签310指向这个表面)以及相对顶表面(图3中不可见，因为背离观看者)的滑块衬底。滑块衬底优选地包括AlTiC，尽管也可能使用另一陶瓷或硅。读取磁头310的滑块衬底还包括包含读取转换器(图3种太小无法看见)的下降面(trailingface)。读取磁头310还可以包括可以是感应式磁写入转换器的写入转换器。
在图3中，负荷梁302的第一个目的可以是向读取磁头310提供有限的垂直顺性以便在盘旋转时遵循盘的表面的垂直波动。负荷梁302的第二个目的可以是通过预加载力抵靠邻近的盘表面来预加载读取头310的空气承载表面，该预加载力一般被称为“克力”。HGA300还可以包括层压弯曲部分304。层压弯曲部分304可以包括舌306，读取磁头310附接至所述舌306。例如，读取磁头310可以通过粘合剂(诸如UV硬化的环氧树脂、热套环氧、掺杂有导电填料的环氧树脂等)或者传统的焊剂材料被接合(bond)到层压弯曲部分304的舌306。仅一部分的舌306在图3的视图中是可见的，因为读取头310部分地遮掩了它。
在图3的实施例中，层压弯曲部分304的第一个目的可以是为头310提供顺性以便在盘旋转时遵循盘的表面的俯仰角和横摇角波动，同时限定读取磁头310和负荷梁302之间在横向的相对运动以及有关偏航轴的相对运动。层压弯曲部分304的第二个目的可以是提供多个电路径以促进向读取磁头310的信号传输/来自于读取磁头310的信号传输。对于第二种目的，层压弯曲部分304可以包括多个导电迹线，这些导电迹线被限定在层压弯曲部分304的导电(例如，铜)子层内。该导电迹线可以通过电介质层(例如聚酰亚胺)与支撑层(例如，不锈钢)绝缘。这些导电迹线可以沿着层压弯曲部分304的弯曲的尾部308从读取头310延伸到达该柔性电缆(未示出)的一部分，该柔性电缆包括接近致动器(例如，图1中的致动器116)本体的前置放大器芯片。
在图3的实施例中，负荷梁302被附接至安装板320。这些组件可以由不锈钢制成，并且可以通过例如多个点焊来制造它们相互之间的附接。在某些实施例中，悬挂组件安装板320可以包括环形的型锻凸起以通过传统的被称为型锻的附接工艺促进悬挂组件与致动器臂(例如图1中的致动器臂116的一个臂)的附接。在那种情况下，悬挂组件安装板320也可以被称为“型锻安装板”。负荷梁302、层压弯曲部分304(不具有读取磁头310)以及安装板320一起可以被称为“悬挂组件”。一旦读取磁头310被添加到悬挂组件(例如，被接合到层压弯曲部分304的舌306)，该组件随后便可以被称为HGA。
图4是能够包括本发明的一个实施例的双自由层读取传感器400的简化图示，其包括双自由层传感器堆404以及邻近的软偏置结构402。在图4中显示邻近的软偏置结构402的仅一半，从而可以更清楚地描绘双自由层传感器堆404。然而，邻近的软偏置结构402的另一半优选地将会被布置在假想(虚线)线所示的占用空间403之上，与来自图4中所示的邻近的软偏置结构402的一半的双自由层传感器堆404相对。
在图4的简化图示中，磁硬偏置结构406被布置在双自由层传感器堆404的后面，其中记录介质(未示出)被布置在双自由层传感器堆404的前面(位于双自由层传感器堆404的相对侧上，而不是磁硬偏置结构406)。没有在图4中显示记录介质，因为它会阻碍查看所示的其他所有结构并且遮蔽所示的其他所有结构。
在图4的简化图示中，双自由层传感器堆404包括第一铁磁自由层410以及第二铁磁自由层420，该第一铁磁自由层410和第二铁磁自由层420由非磁间隔层或绝缘阻挡层430隔开。邻近的软偏置结构402包括第一铁磁软偏置层460，该铁磁软偏置层与第二铁磁软偏置层470由非磁耦合层480(例如钌层)隔开。
在图4的简化图示中，铁磁层中的每一个铁磁层的磁化的可能的示例方向由箭头来表示。例如，第一铁磁软偏置层460的磁化的示例方向由箭头461表示，并且第二铁磁软偏置层470的磁化的示例方向由箭头471表示。因为第一和第二铁磁软偏置层460和470通过图4的示例中的耦合层480被反铁磁耦合，箭头461和471被指向相反的方向。这种反铁磁耦合在此也可被称为负耦合。相反，铁磁耦合(即正耦合)将会趋于使得耦合层的磁化方向指向相同方向。
在图4的简化图示中，硬偏置结构406的示例磁化方向由箭头407(其在图4的图示中指向磁介质)来表示。第一铁磁自由层410的磁化的示例方向由箭头411来表示。第二铁磁自由层420的磁化的示例方向由箭头421来表示。
在图4的简化图示中，将该第一铁磁自由层和第二铁磁自由层410和420通过间隔或阻挡层430优选地铁磁(正地)耦合。因此，耦合的自由层的方向411和421将会趋于处于相同方向(例如与硬偏置结构406的磁化方向407对齐)。然而，来自软偏置结构的402的磁场趋于使第一铁磁自由层和第二铁磁自由层410，420的磁化方向411和421相对地发生偏斜，使得它们不能指向相同方向。在某些实施例中，通过硬和软偏置结构，优选地将第一铁磁自由层和第二铁磁自由层410，420的磁化方向411和421偏斜以便在静止状态(没有来自介质的由外部施加的任何磁场)相互正交。
由于第一铁磁自由层和第二铁磁自由层410，420的磁化方向411和421之间的偏斜上的差异，来自介质的由外部施加的磁场(朝向或远离硬偏置结构406)将趋于相反地旋转磁化方向411和421。响应于来自介质的由外部施加的磁场，这种相反旋转可以被称为“剪刀”操作模式。
应注意，在图4的简单示例中，考虑到的是，附加层可以存在于双自由层传感器堆404。例如，除了第一铁磁自由层和第二铁磁自由层410，420以及间隔或阻挡层430，双自由层传感器堆404可以包括封盖层(capinglayer)492和缓冲层494(例如钽，钛，铬，钌，铪，铜或者银)，和/或其他层。然而，本说明书的其余部分在此着重于双自由层读取传感器的第一铁磁自由层和第二铁磁自由层的组成和结构以及它们之间的间隔或阻挡层的新颖示例，而不排除存在其他层的可能性。
图5描绘了根据本发明的一个实施例的双自由层传感器层压500。双自由层传感器层压500包括不被磁性地钉扎的第一铁磁自由层510，以及不被磁性地钉扎的第二铁磁自由层520。在某些实施例中，第一铁磁自由层510和第二铁磁自由层520各自具有在10到100埃的范围内的总厚度。在图5的实施例中，双自由层传感器层压500包括布置在第一铁磁自由层510和第二铁磁自由层520之间的非磁间隔层530。在某些优选实施例中，第一铁磁自由层510和第二铁磁自由层520正(铁磁地)耦合，而不是负(反铁磁地)耦合。这种所期望的耦合由在此所描述的新颖示例层压和子层组成提供。
在某些巨磁阻(GMR)实施例中，非磁间隔层530可以包括非铁磁金属(例如铜、银、金、钽、钌、铬、或其合金)，并且优选地具有在5到100埃的范围内的厚度。在某些隧道磁阻(TMR)实施例中，非磁间隔层530可以包含绝缘阻挡层(例如氧化铝、氧化钛、或氧化镁)，并且优选地具有在2.5到20埃的范围内的厚度。
在图5的实施例中，第一铁磁自由层510包含第一多个铁磁子层，所述第一多个铁磁子层包括与非磁间隔层530相接触的第一钴铁子层512以及与非磁间隔层530不接触的第一非晶钴硼子层514。同样地，第二铁磁自由层520包含第二多个铁磁子层，所述第二多个铁磁子层包括与非磁间隔层530相接触的第二钴铁子层522以及与非磁间隔层530不接触的第二非晶钴硼子层524。
在某些实施例中，第一非晶钴硼子层和第二非晶钴硼子层514，524中的每一个非晶钴硼子层可具有组成CO(100-y)B(y)，其中y优选地在10到30原子百分比的范围内(例如20％)。在某些其他实施例中，第一非晶钴硼子层和第二非晶钴硼子层514，524中的每一个非晶钴硼子层可具有组成Co(100-y-z)Fe(z)B(y)，其中y优选地在10到30原子百分比的范围内，并且z优选地在5到60原子百分比的范围内。在某些实施例中，第一非晶钴硼子层和第二非晶钴硼子层514，524中的每一个非晶钴硼子层可以优选地具有在5到100埃的范围内的厚度(例如50埃)。
在图5的实施例中，第一和第二钴铁子层512，522中的每一个具有组成Co(100-x)Fe(x)，其中x优选地在10到90原子百分比的范围内(例如70％)。在某些实施例中，第一和第二钴铁子层512，522中的每一个可以具有优选地在3到20埃的范围内的厚度(例如最优选地在4到7埃的范围内)。在某些实施例中，上述示例层压安排以及子层厚度和/或组成可以通过非磁间隔层530在第一铁磁自由层510和第二铁磁自由层520之间有利地提供正(铁磁而不是反铁磁)耦合。
图6描绘了根据本发明的另一实施例的双自由层传感器层压600。双自由层传感器层压600包括不被磁性地钉扎的第一铁磁自由层610，以及不被磁性地钉扎的第二铁磁自由层620。在某些实施例中，第一铁磁自由层610和第二铁磁自由层620中的每一个具有在10到100埃的范围内的总厚度。在图6的实施例中，双自由层传感器层压600包括布置在第一铁磁自由层610和第二铁磁自由层620之间的非磁间隔层630。在某些优选实施例中，第一铁磁自由层610和第二铁磁自由层620正(铁磁地)耦合，而不是负(反铁磁地)耦合。
在某些GMR实施例中，非磁间隔层630可以包含非铁磁金属(例如铜、银、金、钽、钌、铬、或其合金)，并且优选地具有在5到100埃的范围内的厚度。在某些TMR实施例中，非磁间隔层630可以包括绝缘阻挡层(例如氧化铝、氧化钛、或氧化镁)，并且优选地具有在2.5到20埃的范围内的厚度。
在图6的实施例中，第一铁磁自由层610包含第一多个铁磁子层，所述第一多个铁磁子层包括与非磁间隔层630相接触的第一钴铁子层612以及与非磁间隔层630不接触的三个非晶钴硼子层614，616和618。同样地，第二铁磁自由层620包含第二多个铁磁子层，所述第二多个铁磁子层包括与非磁间隔层630相接触的第二钴铁子层622以及与非磁间隔层630不接触的三个非晶钴硼子层624，626和628。
在某些实施例中，非晶钴硼子层614，616，618，624，626和628中的每一个可以具有组成CO(100-y)B(y)，其中y优选地在10到30原子百分比的范围内(例如20％)。在某些其他实施例中，非晶钴硼子层614，616，618，624，626和628中的每一个可以具有组成CO(100-y-z)Fe(z)B(y)，其中y优选地在10到30原子百分比的范围内，并且z优选地在5到60原子百分比的范围内。在某些实施例中，非晶钴硼子层614，616，618，624，626和628中的每一个可以优选地具有在5到100埃的范围内的厚度(例如，最优选地在15到19埃的范围内)。
在图6的实施例中，非晶钴硼子层614，616，618，624，626和628与防尘层644，646，654和656交替。即，防尘层644被布置在非晶钴硼子层614和616之间，并且防尘层646被布置在非晶钴硼子层616和618之间。同样地，防尘层654被布置在非晶钴硼子层624和626之间，并且防尘层656布置在非晶钴硼子层626和628之间。
在某些实施例中，防尘层644，646，654和656中的每一个防尘层包括钌。在某些其他实施例中，防尘层644，646，654和656中的每一个防尘层包括具有组成Ni(100-z)Fe(z)的镍铁，其中z在3到10原子百分比的范围内(例如5％)。防尘层644，646，654和656中的每一个防尘层可优选地具有在0.5到10埃的范围内的防尘层厚度(例如2埃)。
在图6的实施例中，第一钴铁子层612和第二钴铁子层622中的每一个具有组成Co(100-x)Fe(x)，其中x优选地在10到90原子百分比的范围内(例如70％)。在某些实施例中，第一钴铁子层612和第二钴铁子层622中的每一个可优选地具有在3到20埃的范围内的厚度(例如最优选地在4到7埃的范围内)。在某些实施例中，上述示例层压安排以及子层厚度和/或组成可以通过非磁间隔层630在第一铁磁自由层610和第二铁磁自由层620之间有利地提供正(铁磁而不是反铁磁)耦合。
图7描绘了根据本发明的另一实施例的双自由层传感器层压700。双自由层传感器层压700包括不被磁性地钉扎的第一铁磁自由层710，以及不被磁性地钉扎的第二铁磁自由层720。在某些实施例中，第一铁磁自由层710和第二铁磁自由层720中的每一个具有在10到100埃的范围内的总厚度。在图7的实施例中，双自由层传感器层压700包括布置在第一铁磁自由层710和第二铁磁自由层720之间的非磁间隔层730。在某些优选实施例中，第一铁磁自由层710和第二铁磁自由层720正(铁磁地)耦合，而不是负(反铁磁地)耦合。在某些GMR实施例中，非磁间隔层730可以包括非铁磁金属(例如铜、银、金、钽、钌、铬、或其合金)，并且优选地具有在5到100埃的范围内的厚度。
在某些TMR实施例中，非磁间隔层730可以包括绝缘阻挡层(例如氧化铝、氧化钛、或氧化镁)，并且优选地具有在2.5到20埃的范围内的厚度。在这种TMR实施例中，绝缘阻挡层730可以通过金属(例如镁)在氧气或氩氧混合物(例如氩和氧9∶1的混合物)的低压氛围(例如～0.5毫托)中的自然氧化而形成。具体地，在完成第一铁磁自由层710的沉积后，金属沉积和氧化的迭代循环可以被采用以形成绝缘阻挡层730。然后可以在中间温度下对绝缘阻挡层730进行短时原位退火(例如5分钟200℃)。经热处理后，可将类似的薄金属层(例如1.5埃的镁层)添加到绝缘阻挡层730以便对其封盖。接下来，绝缘阻挡层730可以被冷却到适当低于室温(例如120°K)。这种冷却可通过更改绝缘阻挡层730的主体和表面的性能及温度促进随后的第二铁磁自由层720的沉积，第二铁磁自由层720生长在绝缘阻挡层730上。在某些实施例中，这种工艺可以提高第一铁磁自由层710和第二铁磁自由层720之间的层间耦合，和/或有利地提高隧道磁阻比。
在图7的实施例中，第一铁磁自由层710包含第一多个铁磁子层，所述第一多个铁磁子层包括与非磁间隔层730相接触的第一钴铁子层712，与非磁间隔层730不接触的第一非晶钴硼子层714，铁镍合金层718以及布置于铁镍合金层718与第一非晶钴硼子层714之间的防尘层744。同样地，第二铁磁自由层720包含第二多个铁磁子层，所述第二多个铁磁子层包括与非磁间隔层730相接触的第二钴铁子层722以及与非磁间隔层730不接触的第二非晶钴硼子层724，铁镍合金层728以及布置于铁镍合金层728与第二非晶钴硼子层724之间的防尘层754。
在某些实施例中，第一非晶钴硼子层714和第二非晶钴硼子层724中的每一个可以具有组成Co(100-y)B(y)，其中y优选地在10到30原子百分比的范围内(例如20％)。在某些其他实施例中，第一非晶钴硼子层714和第二非晶钴硼子层724中的每一个可以具有组成Co(100-y-z)Fe(z)B(y)，其中y优选地在10到30原子百分比的范围内，并且z优选地在5到60原子百分比的范围内。在某些实施例中，第一非晶钴硼子层714和第二非晶钴硼子层724中的每一个可以优选地具有在5到100埃的范围内的厚度(例如20埃)。
在某些实施例中，防尘层744和754中的每一个防尘层包括铁或钽，并且优选地具有在0.5到10埃的范围内的防尘层厚度(例如2埃)。在某些实施例中，铁镍合金层718和728中的每一个铁镍合金层主要由镍组成并且具有在30到70埃的范围内的厚度(例如50埃)。
在图7的实施例中，第一钴铁子层712和第二钴铁子层722中的每一个具有组成Co(100-x)Fe(x)，其中x优选地在10到90原子百分比的范围内(例如70％)。在某些实施例中，第一钴铁子层712和第二钴铁子层722中的每一个可以具有优选地在3到20埃的范围内的厚度(例如4埃)。在某些实施例中，上述示例层压安排以及子层厚度和/或组成可以通过非磁间隔层730在第一铁磁自由层710和第二铁磁自由层720之间有利地提供正(铁磁而不是反铁磁)耦合。
在前述说明书中，参照特定的示例性实施例描述了本发明，但本领域技术人员将认识到本发明并不局限于此。可以想到，本发明的各种特征和方面可以单独地或联合地以及可能地用于不同环境或申请。相应地，说明书和附图应被视为说明性和示例性的，而非限制性的。例如，“优选地”一词以及短语“优选地但不必需地”在此是同义使用的，以便始终如一地或可选地包括“不必需地”的意义。所述附图不一定是按比例绘制的。“包含(comprising)”，“包括(including)”以及“具有”意指开放式术语。
Claims (23)
1.一种磁传感器，包括：
不被磁性地钉扎的第一铁磁自由层；
不被磁性地钉扎的第二铁磁自由层；
布置在所述第一铁磁自由层和所述第二铁磁自由层之间的非磁间隔层；
其中，所述第一铁磁自由层包含第一多个铁磁子层，所述第一多个铁磁子层包括与所述非磁间隔层相接触的第一钴铁子层以及与所述非磁间隔层不接触的第一非晶钴硼子层；以及
其中，所述第二铁磁自由层包含第二多个铁磁子层，所述第二多个铁磁子层包括与所述非磁间隔层相接触的第二钴铁子层以及与所述非磁间隔层不接触的第二非晶钴硼子层；
其中，所述第一钴铁子层和所述第二钴铁子层中的每一个具有组成Co(100-x)Fe(x)，其中x在10到90原子百分比的范围内。
2.根据权利要求1所述的磁传感器，其中，所述第一铁磁自由层和所述第二铁磁自由层铁磁地耦合。
3.根据权利要求1所述的磁传感器，其中，所述第一铁磁自由层具有第一磁化方向，并且所述第二铁磁自由层具有第二磁化方向，并且所述第一磁化方向和所述第二磁化方向在静止状态下基本上是正交的。
4.根据权利要求1所述的磁传感器，其中，所述非磁间隔层包含非铁磁金属，所述非铁磁金属具有在5到100埃的范围内的厚度并且是从由铜、银、金、钽、钌以及铬组成的组中选择的。
5.根据权利要求1所述的磁传感器，其中，所述非磁间隔层包含具有在2.5到20埃的范围内的厚度的绝缘阻挡层。
6.根据权利要求5所述的磁传感器，其中，所述绝缘阻挡层包括氧化铝、氧化钛、或氧化镁。
7.根据权利要求1所述的磁传感器，其中，所述第一非晶钴硼子层和所述第二非晶钴硼子层中的每一个具有组成Co(100-y)B(y)，其中y在10到30原子百分比的范围内。
8.根据权利要求1所述的磁传感器，其中，所述第一非晶钴硼子层和所述第二非晶钴硼子层中的每一个具有组成Co(100-y-z)Fe(z)B(y)，其中y在10到30原子百分比的范围内，并且z在5到60原子百分比的范围内。
9.根据权利要求1所述的磁传感器，其中，所述第一多个铁磁子层和所述第二多个铁磁子层中的每一个包括交替的非晶钴硼子层和钌防尘层，这些钌防尘层每个具有在0.5到10埃的范围内的厚度。
10.根据权利要求1所述的磁传感器，其中，所述第一多个铁磁子层和所述第二多个铁磁子层中的每一个包括交替的非晶钴硼子层和镍铁防尘层，这些镍铁防尘层每个具有在0.5到10埃的范围内的厚度以及组成Ni(100-z)Fe(z)，其中z在3到10原子百分比的范围内。
11.根据权利要求1所述的磁传感器，其中，所述第一钴铁子层和所述第二钴铁子层中的每一个具有在3到20埃的范围内的厚度。
12.根据权利要求1所述的磁传感器，其中，所述第一非晶钴硼子层和所述第二非晶钴硼子层中的每一个具有在5到100埃的范围内的厚度。
13.根据权利要求1所述的磁传感器，其中，所述第一铁磁自由层和所述第二铁磁自由层中的每一个具有在10到100埃的范围内的总厚度。
14.一种磁头，包括：
一个滑块，该滑块具有存在于ABS平面中的空气承载表面(ABS)并且具有大致正交于所述ABS平面的下降面，所述滑块限定了垂直于所述下降面的纵向轴并且限定了垂直于所述ABS平面的垂直轴，并且限定了垂直于所述纵向轴和所述垂直轴两者的横轴；
磁传感器被布置在所述下降面上，所述磁传感器包含
不被磁性地钉扎的第一铁磁自由层；
不被磁性地钉扎的第二铁磁自由层；
布置在所述第一铁磁自由层和所述第二铁磁自由层之间的非磁间隔层；
其中，所述第一铁磁自由层包含第一多个铁磁子层，所述第一多个铁磁子层包括与所述非磁间隔层相接触的第一钴铁子层以及与所述非磁间隔层不接触的第一非晶钴硼子层；以及
其中，所述第二铁磁自由层包含第二多个铁磁子层，所述第二多个铁磁子层包括与所述非磁间隔层相接触的第二钴铁子层以及与所述非磁间隔层不接触的第二非晶钴硼子层；
其中，所述第一钴铁子层和所述第二钴铁子层中的每一个具有组成Co(100-x)Fe(x)，其中x在10到90原子百分比的范围内；
邻近于所述磁传感器被横向布置的两个反铁磁耦合的软偏置层；以及
硬磁，所述硬磁被垂直地布置为邻近于所述磁传感器并且相比于所述传感器距离所述ABS平面被布置的更远。
15.根据权利要求14所述的磁头，其中，所述第一铁磁自由层具有第一磁化方向，并且所述第二铁磁自由层具有第二磁化方向，并且所述第一磁化方向和所述第二磁化方向在静止状态下基本上是正交的。
16.根据权利要求14所述的磁头，其中，所述非磁间隔层包括包含氧化铝、氧化钛或氧化镁的绝缘阻挡层。
17.根据权利要求14所述的磁头，其中，所述第一非晶钴硼子层和所述第二非晶钴硼子层中的每一个具有组成Co(100-y)B(y)，其中y在10到30原子百分比的范围内。
18.根据权利要求14所述的磁头，其中，所述第一非晶钴硼子层和所述第二非晶钴硼子层中的每一个具有组成Co(100-y-z)Fe(z)B(y)，其中y在10到30原子百分比的范围内，并且z在5到60原子百分比的范围内。
19.根据权利要求14所述的磁头，其中，所述第一多个铁磁子层和所述第二多个铁磁子层中的每一个包括交替的非晶钴硼子层和钌防尘层，所述钌防尘层每个具有在0.5到10埃的范围内的厚度。
20.根据权利要求14所述的磁头，其中，所述第一多个铁磁子层和所述第二多个铁磁子层中的每一个包括交替的非晶钴硼子层和镍铁防尘层，这些镍铁防尘层每个具有在0.5到10埃的范围内的厚度以及组成Ni(100-z)Fe(z)，其中z在3到10原子百分比的范围内。
21.根据权利要求14所述的磁头，其中，所述第一钴铁子层和所述第二钴铁子层中的每一个具有在3到20埃的范围内的厚度。
22.根据权利要求14所述的磁头，其中，所述第一非晶钴硼子层和所述第二非晶钴硼子层中的每一个具有在5到100埃的范围内的厚度。
23.一种盘驱动器，包括：
盘驱动器底座；
转轴，所述转轴被附接至所述盘驱动器底座并且限定了转轴旋转轴线；
旋转地安装在所述转轴上盘；
附接至所述盘驱动器底座的磁头致动器；
附接至所述磁头致动器的磁头；所述磁头包括
滑块，所述滑块具有面朝所述盘并且存在于ABS平面中的空气承载表面即ABS并且具有大致正交于所述ABS平面的下降面，所述滑块限定了垂直于所述下降面的纵向轴并且限定了垂直于所述ABS平面并且大致平行于所述转轴旋转轴线的垂直轴，并且限定了垂直于所述纵向轴和所述垂直轴两者的横轴；
布置在该下降面上的磁传感器，该磁传感器包括
不被磁性地钉扎的第一铁磁自由层；
不被磁性地钉扎的第二铁磁自由层；
布置在所述第一铁磁自由层和所述第二铁磁自由层之间的非磁间隔层；
其中，所述第一铁磁自由层包含第一多个铁磁子层，所述第一多个铁磁子层包括与所述非磁间隔层相接触的第一钴铁子层以及与所述非磁间隔层不接触的第一非晶钴硼子层；以及
其中，所述第二铁磁自由层包含第二多个铁磁子层，所述第二多个铁磁子层包括与所述非磁间隔层相接触的第二钴铁子层以及与所述非磁间隔层不接触的第二非晶钴硼子层；
其中，所述第一钴铁子层和所述第二钴铁子层中的每一个具有组成Co(100-x)Fe，其中x在10到90原子百分比的范围内；
邻近于所述磁传感器被横向布置的两个反铁磁耦合的软偏置层；以及
硬磁，所述硬磁被垂直地布置为邻近于所述磁传感器并且相比于所述传感器距离所述ABS平面被布置的更远。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/508,697 US9007725B1 (en) | 2014-10-07 | 2014-10-07 | Sensor with positive coupling between dual ferromagnetic free layer laminates |
| US14/508,697 | 2014-10-07 |
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| CN105489229A true CN105489229A (zh) | 2016-04-13 |
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-
2014
- 2014-10-07 US US14/508,697 patent/US9007725B1/en active Active
-
2015
- 2015-09-30 CN CN201510640808.0A patent/CN105489229A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113196078A (zh) * | 2019-08-28 | 2021-07-30 | 西部数据技术公司 | 双自由层tmr磁场传感器 |
| CN113823330A (zh) * | 2020-06-19 | 2021-12-21 | 西部数据技术公司 | 横向偏置强度增强 |
| CN113823330B (zh) * | 2020-06-19 | 2024-02-13 | 西部数据技术公司 | 横向偏置强度增强 |
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