US8491802B1 - Method of forming a dielectric slope for EAMR and magnetic writer - Google Patents
Method of forming a dielectric slope for EAMR and magnetic writer Download PDFInfo
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- US8491802B1 US8491802B1 US13/042,819 US201113042819A US8491802B1 US 8491802 B1 US8491802 B1 US 8491802B1 US 201113042819 A US201113042819 A US 201113042819A US 8491802 B1 US8491802 B1 US 8491802B1
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000005253 cladding Methods 0.000 claims abstract description 87
- 238000005530 etching Methods 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 239000003989 dielectric material Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 230000008569 process Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007737 ion beam deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 229910018936 CoPd Inorganic materials 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
- G11B5/6088—Optical waveguide in or on flying head
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
Definitions
- the present invention generally relates to magnetic recording and, in particular, relates to method of forming dielectric slope for EAMR and magnetic writer.
- FIG. 1 is a diagram depicting an NFT 102 disposed adjacent to a magnetic pole 104 and having a sloped top cladding 106 comprised of a dielectric material (e.g., an aluminum oxide).
- a dielectric material e.g., an aluminum oxide
- dielectric slope A traditional approach to form such a top cladding having a sloped region (hereinafter referred to as “dielectric slope”) is by a milling or RIE operation which requires a buffer or metal etch stop layer.
- a buffer or metal etch stop layer remains under the dielectric slope after the etching operation.
- an optically transparent dielectric material can be used for the buffer or metal etch stop layer, thereby severely limiting the choice of metals and buffer materials that can be used for this purpose.
- the present disclosure addresses this and other problems by providing various methods of forming a dielectric slope by the use of a sacrificial metal etch stop layer.
- the use of a sacrificial metal etch stop layer enables formation of a dielectric slope having a slope angle in the range of 30 and 60 degrees and a thickness of up to 1 micron from AlO x or other RIE-etchable dielectric materials.
- the sacrificial metal etch stop layer can be subsequently removed by an isotropic wet etch, and a resulting undercut can be refilled by an atomic layer deposition process (e.g., AlOx ALD).
- methods of forming an energy assisted magnetic recording (EAMR) writer comprise providing a structure comprising a bottom cladding layer and a near field transducer (NFT).
- the methods can further comprise forming a patterned sacrificial layer over the structure.
- the methods can further comprise depositing a top cladding layer over the patterned sacrificial layer and a remaining region of the structure not covered by the patterned sacrificial layer.
- the methods can further comprise forming a patterned resist over the top cladding layer.
- the methods can further comprise performing a first etching operation on the top cladding layer via the patterned resist, whereby a top cladding having a sloped region is formed.
- the patterned sacrificial layer provides an etch stop for the first etching operation.
- FIG. 1 is a diagram depicting an NFT structure having a sloped top cladding.
- FIGS. 2A-I represent a sequence of diagrams illustrating an exemplary fabrication process for an NFT structure with a dielectric slope such as the one depicted of FIG. 1 according to certain aspects of the present disclosure.
- FIG. 3 is a flowchart illustrating an exemplary process for producing an NFT structure having a dielectric slope according to certain aspects of the subject disclosure.
- FIGS. 4A and 4B are focused ion beam cross section images of NFT structures with dielectric slopes formed by one or more of fabrication methods of the present disclosure.
- FIGS. 2A-H represent a sequence of diagrams illustrating an exemplary fabrication process for an NFT structure with a dielectric slope such as the one depicted of FIG. 1 according to certain aspects of the present disclosure.
- FIG. 2A is a diagram depicting a structure 200 A comprising a bottom cladding layer 210 and an NFT 220 .
- the bottom cladding layer 210 is comprised of a dielectric material such as aluminum oxide (AIOx), silicon dioxide (SiO 2 ), gallium nitride (GaN), and silicon oxi-nitride (SiON).
- the NFT 220 is disposed in a groove formed in the bottom cladding layer 210 , and a top surface of the NFT 220 is coplanar with the top surface of the bottom cladding layer 210 .
- FIG. 2B is a diagram illustrating a step for forming an intermediate structure 200 B having a set of patterned sacrificial layers 242 , 244 over the structure 200 A of FIG. 2A .
- This step includes but is not limited to: forming a first patterned photoresist (PR 1 ) 230 on a first region 212 of the structure 200 A and depositing a set of first patterned sacrificial layers 242 , 244 on the PR 1 230 and a second region 214 of the structure 200 A, respectively.
- PR 1 first patterned photoresist
- the set of first patterned sacrificial layers 242 , 244 have a thickness in the range of about 10 and 40 nm and are comprised of a sacrificial material that can act as an etch stop layer in a first RIE etching operation to be described below.
- the sacrificial material includes a metal selected from the group consisting of Cr, NeFe, and Ru.
- the metal sacrificial material can be deposited using a known deposition process such as a sputter deposition.
- FIG. 2C is a diagram illustrating a step for forming an intermediate structure 200 C having a top cladding layer 250 .
- This step includes but is not limited to: removing the PR 1 230 and the first patterned sacrificial layer 242 deposited thereon by a lift-off process and depositing a dielectric material comprising the top cladding layer 250 on the exposed first region 212 of the structure 200 A and the remaining first patterned sacrificial layer 244 .
- the dielectric material comprising the top cladding layer 250 is the same as the dielectric material comprising the bottom cladding layer 210 .
- the dielectric material comprising the top cladding layer 250 is different from the dielectric material comprising the bottom cladding layer 210 .
- the dielectric material comprising the top cladding layer 250 is typically deposited using any suitable deposition process such as ion beam deposition, sputter deposition, or chemical vapor deposition.
- FIG. 2D is a diagram illustrating a step for forming an intermediate structure 200 D having a second patterned photoresist (PR 2 ) 260 over the top cladding layer 250 .
- This step includes but is not limited to: depositing a photoresist layer over the top cladding layer 250 ; patterning the photoresist layer to obtain a patterned photoresist having a relatively sharp edge (not shown); and reflowing the patterned photoresist at an elevated temperature (e.g., slightly below the glass transition temperature of the photoresist material) for a specific duration to form a sloped resist region 262 in the PR 2 260 .
- an elevated temperature e.g., slightly below the glass transition temperature of the photoresist material
- a profile (e.g., thickness and contour of the sloped resist region 262 ) of the PR 2 260 determines a profile (e.g., thickness and slope angle) of a sloped region 254 of a patterned top cladding layer 252 to be formed via the PR 2 260 .
- FIG. 2E is a diagram illustrating a step for forming an intermediate structure 200 E having the patterned top cladding layer 252 .
- the patterned top cladding layer 252 includes the sloped region 254 that has a thickness 257 and makes a slope angle ⁇ 259 with respect to the top surface of the first patterned sacrificial layer 242 .
- This step includes but is not limited to: performing a first RIE etching operation on the top cladding layer 250 of the structure 200 D ( FIG. 2D ) via the PR 2 260 having the sloped resist region 262 .
- the first patterned sacrificial layer 242 functions as an etch stop layer that protects the underlying NFT 220 and the lower cladding layer 210 from the RIE etching.
- the profile (e.g., the thickness 257 and the slope angle ⁇ 259 ) of the slopped cladding region 254 is controlled at least in part by the profile (e.g., thickness and contour of the sloped resist region 262 ) of the PR 2 260 .
- the profile of the PR 2 is controlled by a reflow process in which the photoresist having a relatively sharp-angled edge is baked at an elevated temperature for a specified duration.
- the thickness 257 of the patterned top cladding layer 252 can be controlled between about 0.1 to 1 ⁇ m, and the slope angle ⁇ 259 of the patterned top cladding layer 252 can be controlled between about 15 to 90 degrees.
- FIG. 2F is a diagram illustrating a step for forming an intermediate structure 200 F arrived after removing the first patterned sacrificial layer 244 from the structure 200 E ( FIG. 2E ).
- This step includes but is not limited to performing a metal etching operation on the first patterned sacrificial layer 244 .
- the metal etching operation can include an RIE operation or a wet etching operation suitable for the particular metal (e.g., Cr) used to form the first patterned sacrificial layer 244 .
- the removal of the first patterned sacrificial layer 242 creates an undercut 260 in a distal end of the patterned top cladding layer 252 as shown in FIG. 2F .
- the undercut 260 is refilled with a refilling dielectric material by steps illustrated in FIGS. 2G-H and described below.
- FIG. 2G is a diagram illustrating a step for forming an intermediate structure 200 G having a set of second patterned sacrificial layers 272 , 274 deposited on the patterned top cladding layer 252 and the second region 214 of the structure 200 A, respectively.
- This step includes but is not limited to depositing a thin sacrificial material to a thickness in the range of about 1 and 5 nm by an ion beam deposition (IBD) process, for example.
- the sacrificial material is selected so that it can function as an etch stop layer for a second RIE etching operation to be described below with respect to FIG. 2I .
- the sacrificial material includes a metal selected from the group consisting of Cr, NeFe, and Ru.
- FIG. 2H is a diagram illustrating a step for forming an intermediate structure 200 H having a set of dielectric layers 282 , 284 , 286 deposited over and in the structure 200 G ( FIG. 2G ).
- This step includes but is not limited to depositing a refilling dielectric material to a thickness in the range of about 10 and 40 nm by an atomic layer deposition (ALD) process, for example.
- the refilling dielectric material is preferably the same dielectric material comprising the patterned top cladding layer 252 .
- the undercut 260 FIG. 2F
- the undercut 260 formed in the patterned top cladding layer 252 by the removal of the first patterned sacrificial layer 244 , is refilled with the refilling dielectric material.
- FIG. 2I is a diagram illustrating a step for forming a final NFT structure 2001 including the patterned top cladding layer 252 with undercut 260 refilled with the refilling dielectric material 286 .
- This step includes but is not limited to removing the refilling dielectric material 282 , 284 that are not used for refilling the undercut 260 .
- the removal can be achieved, for example, by an RIE operation suitable for the particular refilling dielectric material (e.g., AlOx) used.
- the final NFT structure 2001 includes the sloped region 254 having the thickness 257 , the slope angle ⁇ 259 , and a slope pole position offset 205 .
- the second sacrificial layer 272 , 274 functions as an etch stop layer. At least a portion of the second sacrificial layer 272 , 274 can be removed during the RIE etching operation (“over etch”). The amount of the over etch can determine the slope pole position offset 205 shown in FIG. 2I . The remaining portion of the second sacrificial layer 272 , 274 can be subsequently removed by a wet etching operation, for example.
- FIG. 3 is a flowchart illustrating an exemplary process 300 for fabricating an NFT structure having a dielectric slope according to certain aspects of the subject disclosure.
- the process 300 begins at start state 301 and proceeds to operation 310 in which the structure 200 A ( FIG. 2A ) comprising the bottom cladding layer 210 and the NFT 220 is provided.
- the bottom cladding layer 210 can be a dielectric material selected from the group consisting of aluminum oxide (AlOx), silicon dioxide (SiO 2 ), gallium nitride (GaN), and silicon oxi-nitride (SiON).
- the NFT 220 can be any metal that can support surface plasmon resonance (SPR) including but limited to Au, Ag, Al and a combination thereof.
- SPR surface plasmon resonance
- the process 300 proceeds to operation 320 in which the set of first patterned sacrificial layers 242 , 244 are formed over the structure 200 A to obtain the intermediate structure 200 B of FIG. 2B .
- the operation 320 can include forming the first patterned photoresist (PR 1 ) 230 on the first region 212 of the structure 200 A by a known photolithography process and depositing the set of first patterned sacrificial layers 242 , 244 on the PR 1 230 and the second region 214 of the structure 200 A, respectively.
- the sacrificial material can be a metal selected from the group consisting of Cr, NeFe, and Ru.
- the metal sacrificial material is deposited using a known metal deposition process such as sputter deposition.
- the PR 1 230 and the first patterned sacrificial layer 242 formed thereon are removed by a lift-off process.
- the process 300 proceeds to operation 330 in which the top cladding layer 250 is deposited over the first region of the structure 200 A and the first patterned sacrificial layer 244 as shown in FIG. 2C .
- the dielectric material comprising the top cladding layer 250 is the same as the dielectric material comprising the bottom cladding layer 210 such as aluminum oxide (AlOx), silicon dioxide (SiO 2 ), gallium nitride (GaN), and silicon oxi-nitride (SiON).
- the dielectric material comprising the top cladding layer is different from the dielectric material comprising the bottom cladding layer.
- the dielectric material comprising the top cladding layer 250 is typically deposited using sputter deposition process, although any other suitable deposition process such as ion beam deposition and chemical vapor deposition may be used.
- the process 300 proceeds to operation 340 in which the second patterned photoresist (PR 2 ) 260 is formed over the top cladding layer 250 to arrive at the intermediate structure 200 D of FIG. 2D .
- the operation 340 involves depositing a photoresist layer over the top cladding layer 250 ; patterning the photoresist layer to obtain a patterned photoresist having a relatively sharp edge; and reflowing (e.g., baking) the patterned photoresist at an elevated temperature (e.g., slightly below the glass transition temperature of the photoresist material) for a specific duration to form the sloped resist region 262 of the second patterned photoresist (PR 2 ) 260 .
- an elevated temperature e.g., slightly below the glass transition temperature of the photoresist material
- the process 300 proceeds to operation 350 in which a first etching operation is performed on the top cladding layer 250 via the PR 2 260 to form the patterned top cladding layer 252 that includes the sloped region 254 having the thickness 257 and the slope angle ⁇ 259 .
- the operation 350 includes performing a first RIE etching operation on the top cladding layer 250 via the PR 2 260 having the sloped resist region 262 .
- the first patterned sacrificial layer 242 functions as an etch stop layer that protects the underlying NFT 220 and the lower cladding layer 210 from the RIE etching.
- the process 300 proceeds to operation 360 in which a second etching operation is performed to remove the first patterned sacrificial layer 242 as shown in FIG. 2F .
- the operation 360 can include performing a metal etching operation.
- the metal etching operation can include an RIE operation or a wet etching operation such as Cr RIE or CR wet etching operation.
- the removal of the first patterned sacrificial layer 242 leaves behind the undercut 260 in a distal end of the patterned top cladding layer 252 as shown in FIG. 2F .
- the process 300 proceeds to operation 370 in which the undercut 260 is refilled with a refilling dielectric material by steps described above with to respect to FIGS. 2G-I which are not repeated here for the sake of brevity.
- FIGS. 4A and 4B are focused ion beam cross section images of NFT structures with dielectric slopes formed by fabrication methods described above.
- the images demonstrate that the profile (e.g., the thickness and the slope angle) of dielectric slope may be controllably varied by the methods described herein while maintaining a specific slope pole position offset (80 nm in the experimental embodiments).
- the EL 1 position offset is determined mainly from the etching operation (e.g., AlOx RIE etching) performed to remove residual refilling dielectric materials 282 , 284 described above with respect to FIG. 2I .
- the slope pole position offset can be controlled accurately by the end point provided by the second sacrificial layer 272 .
- the 80 nm slope pole position offset in the experimental embodiments of FIGS. 4A and 4B were achieved with a 10% over etch.
- Different resist reflow processes e.g., different baking temperature and duration
- Various dielectric slope fabrication methods described herein provide distinct advantages over prior art methods.
- the advantages include but are not limited to: 1) no residue or any contamination left behind; 2) the slope angle being tunable, e.g., from 25 to 50 degrees, to meet design requirements; 3) achieving superior WIW and WTW sigmas; 4) easy integration with other components of EAMR head such as mode converter and NFT heat sink; and 5) adaptability of the approach to fabrication of a single writer which requires a VP 3 pole angle of greater than 35 degrees.
Abstract
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US13/042,819 US8491802B1 (en) | 2011-03-08 | 2011-03-08 | Method of forming a dielectric slope for EAMR and magnetic writer |
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