CN105467644B - In Cell触控显示面板 - Google Patents

In Cell触控显示面板 Download PDF

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Publication number
CN105467644B
CN105467644B CN201510898024.8A CN201510898024A CN105467644B CN 105467644 B CN105467644 B CN 105467644B CN 201510898024 A CN201510898024 A CN 201510898024A CN 105467644 B CN105467644 B CN 105467644B
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CN
China
Prior art keywords
layer
substrate
display panel
control display
insulating layer
Prior art date
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Active
Application number
CN201510898024.8A
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English (en)
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CN105467644A (zh
Inventor
李亚锋
彭香艺
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Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
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Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to CN201510898024.8A priority Critical patent/CN105467644B/zh
Priority to PCT/CN2016/072779 priority patent/WO2017096708A1/zh
Priority to US14/912,601 priority patent/US9921673B2/en
Publication of CN105467644A publication Critical patent/CN105467644A/zh
Application granted granted Critical
Publication of CN105467644B publication Critical patent/CN105467644B/zh
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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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Abstract

本发明提供一种In Cell触控显示面板，本发明的In Cell触控显示面板中，TFT基板(1)一侧的像素电极(15)与源/漏极(45)之间只有第一平坦层(14)，像素电极(15)经由第一平坦层(14)上的第二过孔(141)与源/漏极(45)相接触，和现有技术相比，像素电极(15)与源/漏极(45)之间不仅少了两层钝化层的厚度，更避免了第一钝化层(16)与第一平坦层(14)、第二钝化层(18)与第一平坦层(14)之间因各过孔相互交叠而产生的不良影响，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。

Description

In Cell触控显示面板
技术领域
本发明涉及显示技术领域，尤其涉及一种In Cell触控显示面板。
背景技术
随着显示技术的飞速发展，触控显示面板已经广泛地被人们所接受及使用，如智能手机、平板电脑等均使用了触控显示面板。触控显示面板采用嵌入式触控技术将触控面板和液晶显示面板结合为一体，并将触控面板功能嵌入到液晶显示面板内，使得液晶显示面板同时具备显示和感知触控输入的功能。触控显示面板根据结构不同可划分为触控电极覆盖于液晶盒上式(On Cell)、触控电极内嵌在液晶盒内式(In Cell)、以及外挂式。其中，In Cell式具有成本低、超薄、和窄边框的优点，主要应用在高端触控产品中，已演化为未来触控技术的主要发展方向。
液晶显示面板通常是由一彩膜基板(Color Filter Substrate，CF Substrate)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT ArraySubstrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
低温多晶硅(Low Temperature Poly-silicon，LTPS)技术是新一代TFT基板的制造技术，与传统非晶硅(a-Si)技术的最大差异在于，低温多晶硅显示器反应速度较快，且有高亮度、高解析度与低耗电量等优点。由于LTPS具有高迁移率的优点，那么在进行像素设计时TFT基板开关的W/L(沟道宽度W与沟道长度L之比)就可以设计的很小，这样以来像素对应的开口率相对就比较高，具有极大的市场竞争优势。
请参阅图1，为一种现有In Cell触控显示面板的剖面示意图，所述In Cell触控显示面板包括TFT基板100、与所述TFT基板100相对设置的CF基板200、及位于所述TFT基板100与CF基板200之间的液晶层300。
所述TFT基板100包括第一基板110、设于所述第一基板110上的遮光层120、设于所述第一基板110与遮光层120上的第一绝缘层130、设于所述第一绝缘层130上的多晶硅层410、设于所述第一绝缘层130与多晶硅层410上的第二绝缘层420、设于所述第二绝缘层420上的栅极430、设于所述第二绝缘层420与栅极430上的第三绝缘层440、设于所述第三绝缘层440上的源/漏极450、设于所述第三绝缘层440与源/漏极450上的第一平坦层140、设于所述第一平坦层140上的公共电极150、设于所述公共电极150上的第一钝化层160、设于所述第一钝化层160上的触控感应电极层170、设于所述第一钝化层160与触控感应电极层170上的第二钝化层180、及设于所述第二钝化层180上的像素电极190。
如图2所述，所述TFT基板100还包括设于所述第三绝缘层440上的数据线510。所述遮光层120在水平方向上完全遮盖所述多晶硅层410、栅极430、源/漏极450，并部分遮盖所述数据线510。
如图3所示，所述第一平坦层140、第一钝化层160、第二钝化层180上分别设有相互贯通的第一过孔141、第二过孔161、及第三过孔181，所述像素电极190经由所述第一过孔141、第二过孔161、及第三过孔181与所述源/漏极450相接触。
为使像素电极190与源/漏极450连接在一起，需要在沉积像素电极190前，依次在所述第一平坦层140、第一钝化层160、及第二钝化层180上进行三道挖孔制程，这就使得设计时必须考虑各层孔之间的线宽(CD)变化及相互交叠(overlay)产生的影响，从而限制了开口率的提升，而且挖孔在制程中工艺最复杂，这大大提高了生产难度，影响产品良率。
发明内容
本发明的目的在于提供一种In Cell触控显示面板，TFT基板的像素电极与源/漏极之间只有一层平坦层，且像素电极仅经由该平坦层上的一个过孔与源/漏极相接触，结构简单，具有较高的像素开口率。
为实现上述目的，本发明提供一种In Cell触控显示面板，包括TFT基板、与所述TFT基板相对设置的CF基板、及位于所述TFT基板与CF基板之间的液晶层；
所述TFT基板包括第一基板、设于所述第一基板上的遮光层、设于所述第一基板与遮光层上的第一绝缘层、设于所述第一绝缘层上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的像素电极、设于所述像素电极上的第一钝化层、设于所述第一钝化层上的触控感应电极层、设于所述第一钝化层与触控感应电极层上的第二钝化层、及设于所述第二钝化层上的公共电极；
所述第二钝化层上对应所述触控感应电极层的上方设有第一过孔，所述公共电极经由所述第一过孔与所述触控感应电极层相接触；所述TFT层包括源/漏极，所述第一平坦层上对应所述源/漏极的上方设有第二过孔，所述像素电极经由所述第二过孔与所述源/漏极相接触。
所述TFT层包括设于所述第一绝缘层上的多晶硅层、设于所述第一绝缘层与多晶硅层上的第二绝缘层、设于所述第二绝缘层上的栅极、设于所述第二绝缘层与栅极上的第三绝缘层、及设于所述第三绝缘层上的源/漏极。
所述TFT层还包括设于所述第三绝缘层上的数据线。
所述遮光层在水平方向上完全遮盖所述多晶硅层、栅极、源/漏极，并部分遮盖所述数据线，所述遮光层为金属材料。
所述第一绝缘层、第二绝缘层、第三绝缘层为氮化硅层、氧化硅层、或二者的复合层。
所述公共电极、像素电极的材料为氧化铟锡。
所述CF基板包括第二基板、设于所述第二基板上的黑色矩阵、设于所述第二基板与黑色矩阵上的色阻层、设于所述色阻层上的第二平坦层、及设于所述第二平坦层上的光阻间隔物。
所述光阻间隔物包括主光阻间隔物、及辅光阻间隔物；所述主光阻间隔物与所述第二钝化层相接触，所述辅光阻间隔物与所述公共电极之间有间隙。
所述第一基板、第二基板为玻璃基板。
所述色阻层包括红色色阻层、绿色色阻层、及蓝色色阻层。
本发明的有益效果：本发明的In Cell触控显示面板，TFT基板一侧的第一平坦层上设有像素电极，所述第一平坦层与像素电极上设有第一钝化层，所述第一钝化层上设有触控感应电极层，所述第一钝化层与触控感应电极层上设有第二钝化层，所述第二钝化层上设有公共电极；公共电极经由第二钝化层上的第一过孔与触控感应电极层相接触；像素电极与源/漏极之间只有第一平坦层，像素电极经由第一平坦层上的第二过孔与源/漏极相接触，和现有技术相比，像素电极与源/漏极之间不仅少了两层钝化层的厚度，更避免了第一钝化层与第一平坦层、第二钝化层与第一平坦层之间因各过孔相互交叠而产生的不良影响，设计时可以不必考虑第一平坦层与第一钝化层和第二钝化层之间的相对关系，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为一种现有的In Cell触控显示面板在像素电极与源/漏极的接触孔处的剖面示意图；
图2为图1的In Cell触控显示面板在数据线处的剖面示意图；
图3为图1的In Cell触控显示面板的TFT基板在像素电极与源/漏极的接触孔处的剖面示意图；
图4为本发明的In Cell触控显示面板在像素电极与源/漏极的接触孔处的剖面示意图；
图5为本发明的In Cell触控显示面板在数据线处的剖面示意图；
图6为本发明的In Cell触控显示面板的TFT基板在像素电极与源/漏极的接触孔处的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4至图6，本发明提供一种In Cell触控显示面板，包括TFT基板1、与所述TFT基板1相对设置的CF基板2、及位于所述TFT基板1与CF基板2之间的液晶层3。
所述TFT基板1包括第一基板11、设于所述第一基板11上的遮光层12、设于所述第一基板11与遮光层12上的第一绝缘层13、设于所述第一绝缘层13上的TFT层4、设于所述TFT层4上的第一平坦层14、设于所述第一平坦层14上的像素电极15、设于所述像素电极15上的第一钝化层16、设于所述第一钝化层16上的触控感应电极层17、设于所述第一钝化层16与触控感应电极层17上的第二钝化层18、及设于所述第二钝化层18上的公共电极19；
所述第二钝化层18上对应所述触控感应电极层17的上方设有第一过孔181，所述公共电极19经由所述第一过孔181与所述触控感应电极层17相接触；所述TFT层4包括源/漏极45，所述第一平坦层14上对应所述源/漏极45的上方设有第二过孔141，所述像素电极15经由所述第二过孔141与所述源/漏极45相接触。
由于像素电极15与源/漏极45之间只有第一平坦层14，像素电极15经由第一平坦层14上的第二过孔141与源/漏极45相接触，和现有技术相比，像素电极15与源/漏极45之间不仅少了两层钝化层的厚度，更避免了第一钝化层16与第一平坦层14、第二钝化层18与第一平坦层14之间因交叉挖孔而产生的不良影响，设计时可以不必考虑第一平坦层14与第一钝化层16和第二钝化层18之间的相对关系，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。
具体地，所述TFT层4包括设于所述第一绝缘层13上的多晶硅层41、设于所述第一绝缘层13与多晶硅层41上的第二绝缘层42、设于所述第二绝缘层42上的栅极43、设于所述第二绝缘层42与栅极43上的第三绝缘层44、及设于所述第三绝缘层44上的源/漏极45。
如图5所示，所述TFT层4还包括设于所述第三绝缘层44上的数据线51。
具体地，所述遮光层12在水平方向上完全遮盖所述多晶硅层41、栅极43、源/漏极45，并部分遮盖所述数据线51。具体地，所述遮光层12为金属材料。
具体地，所述第一绝缘层13、第二绝缘层42、第三绝缘层44为氮化硅(SiNx)层、氧化硅(SiOx)层、或二者的复合层。
具体地，所述公共电极19、像素电极15的材料为氧化铟锡(ITO)。
具体地，所述CF基板2包括第二基板21、设于所述第二基板21上的黑色矩阵22、设于所述第二基板21与黑色矩阵22上的色阻层23、设于所述色阻层23上的第二平坦层24、及设于所述第二平坦层24上的光阻间隔物25。
具体地，所述光阻间隔物25包括主光阻间隔物251、及辅光阻间隔物252；所述主光阻间隔物251与所述第二钝化层18相接触，所述辅光阻间隔物252与所述公共电极19之间有间隙。
具体地，所述第一基板11、第二基板12为玻璃基板。
具体地，所述色阻层23包括红色色阻层、绿色色阻层、及蓝色色阻层。
综上所述，本发明的In Cell触控显示面板，TFT基板一侧的第一平坦层上设有像素电极，所述第一平坦层与像素电极上设有第一钝化层，所述第一钝化层上设有触控感应电极层，所述第一钝化层与触控感应电极层上设有第二钝化层，所述第二钝化层上设有公共电极；公共电极经由第二钝化层上的第一过孔与触控感应电极层相接触；像素电极与源/漏极之间只有第一平坦层，像素电极经由第一平坦层上的第二过孔与源/漏极相接触，和现有技术相比，像素电极与源/漏极之间不仅少了两层钝化层的厚度，更避免了第一钝化层与第一平坦层、第二钝化层与第一平坦层之间因各过孔相互交叠而产生的不良影响，设计时可以不必考虑第一平坦层与第一钝化层和第二钝化层之间的相对关系，并大大提高了像素的开口率；同时由于过孔的数量较少，结构较为简单，因而降低了制程的难度，从而提高了产品良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种In Cell触控显示面板，其特征在于，包括TFT基板(1)、与所述TFT基板(1)相对设置的CF基板(2)、及位于所述TFT基板(1)与CF基板(2)之间的液晶层(3)；
所述TFT基板(1)包括第一基板(11)、设于所述第一基板(11)上的遮光层(12)、设于所述第一基板(11)与遮光层(12)上的第一绝缘层(13)、设于所述第一绝缘层(13)上的TFT层(4)、设于所述TFT层(4)上的第一平坦层(14)、设于所述第一平坦层(14)上的像素电极(15)、设于所述像素电极(15)上的第一钝化层(16)、设于所述第一钝化层(16)上的触控感应电极层(17)、设于所述第一钝化层(16)与触控感应电极层(17)上的第二钝化层(18)、及设于所述第二钝化层(18)上的公共电极(19)；
所述第二钝化层(18)上对应所述触控感应电极层(17)的上方设有第一过孔(181)，所述公共电极(19)经由所述第一过孔(181)与所述触控感应电极层(17)相接触；所述TFT层(4)包括源/漏极(45)，所述第一平坦层(14)上对应所述源/漏极(45)的上方设有第二过孔(141)，所述像素电极(15)经由所述第二过孔(141)与所述源/漏极(45)相接触。
2.如权利要求1所述的In Cell触控显示面板，其特征在于，所述TFT层(4)包括设于所述第一绝缘层(13)上的多晶硅层(41)、设于所述第一绝缘层(13)与多晶硅层(41)上的第二绝缘层(42)、设于所述第二绝缘层(42)上的栅极(43)、设于所述第二绝缘层(42)与栅极(43)上的第三绝缘层(44)、及设于所述第三绝缘层(44)上的源/漏极(45)。
3.如权利要求2所述的In Cell触控显示面板，其特征在于，所述TFT层(4)还包括设于所述第三绝缘层(44)上的数据线(51)。
4.如权利要求3所述的In Cell触控显示面板，其特征在于，所述遮光层(12)在水平方向上完全遮盖所述多晶硅层(41)、栅极(43)、源/漏极(45)，并部分遮盖所述数据线(51)；所述遮光层(12)为金属材料。
5.如权利要求2所述的In Cell触控显示面板，其特征在于，所述第一绝缘层(13)、第二绝缘层(42)、第三绝缘层(44)为氮化硅层、氧化硅层、或二者的复合层。
6.如权利要求1所述的In Cell触控显示面板，其特征在于，所述公共电极(19)、像素电极(15)的材料为氧化铟锡。
7.如权利要求1所述的In Cell触控显示面板，其特征在于，所述CF基板(2)包括第二基板(21)、设于所述第二基板(21)上的黑色矩阵(22)、设于所述第二基板(21)与黑色矩阵(22)上的色阻层(23)、设于所述色阻层(23)上的第二平坦层(24)、及设于所述第二平坦层(24)上的光阻间隔物(25)。
8.如权利要求7所述的In Cell触控显示面板，其特征在于，所述光阻间隔物(25)包括主光阻间隔物(251)、及辅光阻间隔物(252)；所述主光阻间隔物(251)与所述第二钝化层(18)相接触，所述辅光阻间隔物(252)与所述公共电极(19)之间有间隙。
9.如权利要求7所述的In Cell触控显示面板，其特征在于，所述第一基板(11)、第二基板(12)为玻璃基板。
10.如权利要求7所述的In Cell触控显示面板，其特征在于，所述色阻层(23)包括红色色阻层、绿色色阻层、及蓝色色阻层。
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