CN105463346A - Spiral line reinforced metal matrix composite and manufacturing method thereof - Google Patents
Spiral line reinforced metal matrix composite and manufacturing method thereof Download PDFInfo
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- CN105463346A CN105463346A CN201510909975.0A CN201510909975A CN105463346A CN 105463346 A CN105463346 A CN 105463346A CN 201510909975 A CN201510909975 A CN 201510909975A CN 105463346 A CN105463346 A CN 105463346A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/02—Pretreatment of the fibres or filaments
- C22C47/04—Pretreatment of the fibres or filaments by coating, e.g. with a protective or activated covering
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/02—Pretreatment of the fibres or filaments
- C22C47/06—Pretreatment of the fibres or filaments by forming the fibres or filaments into a preformed structure, e.g. using a temporary binder to form a mat-like element
- C22C47/062—Pretreatment of the fibres or filaments by forming the fibres or filaments into a preformed structure, e.g. using a temporary binder to form a mat-like element from wires or filaments only
- C22C47/064—Winding wires
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/08—Making alloys containing metallic or non-metallic fibres or filaments by contacting the fibres or filaments with molten metal, e.g. by infiltrating the fibres or filaments placed in a mould
- C22C47/12—Infiltration or casting under mechanical pressure
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
- C22C49/04—Light metals
- C22C49/06—Aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
Abstract
The invention provides a spiral line reinforced metal matrix composite and a manufacturing method thereof and relates to a spiral line reinforced metal matrix composite heat sink material and a manufacturing method thereof. The spiral line reinforced metal matrix composite is composed of a metal matrix, a spiral heat conducting line and diamond particles, wherein the metal matrix is an electronic packaging metal material; the spiral heat conducting line is a surface modified diamond spiral line containing a metal spiral line core or a surface modified graphene spiral line containing the metal spiral line core; the metal spiral line core is selected from any one of a plane spiral line, a cylindrical spiral line and a conic spiral line or a plane spiral structure, a cylindrical spiral structure and a conic spiral structure or the structure of which the plane spiral line is sleeved with the plane spiral structure, the structure of which the cylindrical spiral line is sleeved with the cylindrical spiral structure and the structure of which the conic spiral line is sleeved with the conic spiral structure. The spiral line reinforced metal matrix composite has the excellent heat conducting performance in the spiral line direction, a series-parallel composite heat conducting structure is formed by adding the diamond particles, heat conduction efficiency is further improved, the composite can be used as an electronic packaging material, the heat sink material and the like, and the purpose for packaging a high-temperature, high-frequency and large-power electronic device is achieved.
Description
Technical field
The invention belongs to high-performance electronic encapsulation function Material Field, in particular, provide a kind of super-high heat-conductive spiral-line and strengthen metal-based compound heat sink material and preparation method thereof.
Background technology
Communications satellite high power density device, nuclear fusion device can produce and accumulate a large amount of heats with in the face of plasma material in operational process, for ensureing the steady running of equipment, needing the heat of generation to derive in time, thus very high requirement being proposed to the heat-conductive characteristic of material.Many electronic units of aerospacecraft need normally to work under the envrionment temperature of 40 ~ 60 DEG C, and the heat therefore produced in instrument operational process must be derived in time.The matter of utmost importance that the raising of chip integration and packaging density brings is exactly that device unit power improves constantly, and thermal value constantly increases, and the Working environment of device is worsened.Reduce chip temperature and can have a lot of method, as: the cooling of cold method, water cycle, mini-fan heat radiation etc., but these all fundamentally can not solve heat dissipation problem.Improving the heat conductivility of packaged material, is the essential measure addressed this problem.The shell of traditional microwave power device and heat-radiating substrate are kovar alloy or W-Cu alloy, and wherein the thermal conductivity of W-Cu alloy is higher, are 231W/mk, and density is 14.989/cm
3.On the one hand, the density of such material is comparatively large, and add the weight of device, thermal conductivity can not meet the requirement of HIGH-POWERED MICROWAVES device to material thermal characteristics simultaneously.Develop a kind of high heat conduction, low-density type material become problem in the urgent need to address, this material must have high thermal conductivity, ensures thermal conductance to be gone out timely and effectively, and meets the light-weighted development trend of hyundai electronics packaged material.
Particulate reinforced metal-based (as diamond/aluminum, diamond/copper, diamond/silver etc.) matrix material has a wide range of applications in Electronic Packaging field with its characteristic such as low bulk, high heat conduction.The report that recent domestic strengthens metal-base composites about diamond particles increases gradually.Strengthen at diamond particles in the research process of metal-base composites, it is found that the weave construction of matrix material exists very large impact to its heat physical properties.These weave constructions have interface, dislocation, twin and hole etc., and the impact of its median surface is particularly outstanding.Metal-base composites is made up of matrix metal and reinforcement two portions, change or adjust matrix composition and will affect the performance of material in following two: first show the impact on the hot physical property of body material itself, secondly then show as the impact on matrix and reinforcement interface bonding state.The existence at interface can produce interface resistance (Thermalresistantofinterfaces), hinders the transmission of heat, thus the more many transmission being more unfavorable for heat in interface, the thermal conductivity showing as material declines.Therefore the interface of reducing in matrix material will be conducive to the transmission of heat greatly, and thermal conductivity is improved.
As can be seen here, as diamond particles reinforced aluminum matrix composites, due to the existence of interface resistance, its heat physical properties especially heat-conductive characteristic will be greatly affected.From theory, there is a maximum limit in the thermal conductivity of diamond particles enhancing metal-base composites.This will certainly restrict the development further that diamond particles strengthens metal-base composites.How to develop and there is less interface and isotropic diamond/metal-base composites, the trend of research will be become.
The application of diamond in Electronic Packaging field is realized by cvd diamond self-supporting thick film the earliest, owing to requiring larger thickness, greatly improves use cost.Chemical vapour deposition technique can in the continuous fine and close High Quality Diamond Films of substrate surface preparation of complicated shape, can make to form continuous print passage of heat between diamond crystals, therefore have some scholars to utilize CVD to prepare diamond film/carbon/carbon-copper composite material in exploration always.
The present inventor seminar patent of invention CN102244051A in earlier stage discloses a kind of high-performance directional heat conduction copper-base diamond composite material and preparation method thereof: 1) insert in the columnar through holes of Copper substrate by cvd diamond rod, and make Copper substrate generation viscous deformation by extruding, thus make copper and diamond rod contact coupling completely; 2) cvd diamond rod is inserted in the columnar through holes of Copper substrate, then by electro-deposition techniques at copper sheet along diamond rod direction deposited copper, make the complete cladding diamond rod of copper, contact coupling complete in diamond.The standby copper base diamond matrix material of this legal system has good directed heat conductivility, but due to wettability extreme difference between its diamond rod and matrix metal, two-phase interface combines not tight, interface between diamond rod and matrix metal defines very large thermal resistance, and its thermal conductivity need further to optimize.
Summary of the invention
First technical problem to be solved by this invention is to provide a kind of spiral-line that can realize super-high heat-conductive and strengthens metal-based compound heat sink material.
Second technical problem to be solved by this invention provides a kind of spiral-line realizing this super-high heat-conductive to strengthen the preparation method of metal-based compound heat sink material.
For solving above-mentioned first technical problem, the invention provides a kind of spiral-line and strengthen metal-based compound heat sink material, described composite heat sink material is in matrix metal, be provided with spiral thermal conductive wire, and spiral thermal conductive wire and matrix metal are metallurgical binding.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and described matrix metal is high conduction light heat metallic substance, specifically refers to the one in a kind of or aluminium alloy in metallic aluminium, copper, silver, copper alloy, silver alloys.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and described spiral thermal conductive wire is surface modified diamond spiral-line or surface modified graphite alkene spiral-line; The surface of described surface modified diamond spiral-line or surface modified graphite alkene spiral-line is provided with metallic membrane modification, the effect of metallic membrane is the wettability improved between diamond and matrix metal, therefore, the good film material of wettability should be selected between adjacent film layers.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and described metallic membrane is and diamond or the good layer of metal film of Graphene wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium; Or
Described metallic membrane is composite membrane, and described composite membrane is made up of bottom and surface layer, and described bottom is and diamond or the good layer of metal film of Graphene wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium;
Described surface layer is metallic membrane or alloy film, and according to metallic matrix and underlying metal characteristic, the metallic membrane or the alloy film that form surface layer select unitary film or multilayer film; The material of metallic membrane is selected from and the unitary film of a kind of metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film; The material of alloy film is selected from and the unitary film of the alloy of at least one metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and described surface modified diamond spiral-line or surface modified graphite alkene spiral-line inside are all containing metal spiral core; Described wire spiral core material is selected from a kind of filament shape silk material in tungsten, molybdenum, copper, titanium, silver, gold or is selected from a kind of filament shape silk material in tungstenalloy, molybdenum alloy, copper alloy, titanium alloy, silver alloys, au-alloy; The diameter of described metal spiral core is 0.014 ~ 2.0mm.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and the ratio that described spiral thermal conductive wire volume accounts for composite heat sink all materials long-pending is 1 ~ 80%.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and described spiral thermal conductive wire is surface modified diamond spiral-line; Described surface modified diamond spiral-line surface is provided with alloy film or composite membrane modification, and inside is all containing tungsten-copper alloy spiral core; Described tungsten-copper alloy spiral-line core material is the filament shape silk material of tungsten-copper alloy; The diameter of described tungsten-copper alloy spiral core is 0.014 ~ 2.0mm; Described alloy film is the tungsten-copper alloy film good with diamond wettability, and thickness is 100 ~ 400nm; Described composite membrane is tungsten-copper alloy film/graphene film/tungsten-copper alloy film, and thickness is 100 ~ 300nm/0.34 ~ 10nm/100 ~ 300nm; Described graphene film adopts chemical Vapor deposition process preparation.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, described metal spiral core or tungsten-copper alloy spiral core be selected from snail line, cylindrical helical line, coniform spiral line any one; Or
Described metal spiral core or tungsten-copper alloy spiral core are selected from and are planar curled up by cylindrical helical line and the planar spiral structures formed, to be curled up in space by cylindrical helical line and any one in the cylindrical helical structure formed or coniform spiral structure; Or
Described metal spiral core or tungsten-copper alloy spiral core are selected from any one that to be set with outside snail line and to be set with outside planar spiral structures, cylindrical helical line and to be set with in coniform spiral structure outside cylindrical helical structure, coniform spiral line.
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, the diamond particles through surface modification is also distributed with in described metallic matrix, diamond particles and metallic matrix are metallurgical binding, diamond particles granularity is 1 ~ 200 μm, and the percentage composition that described diamond particles accounts for total composite volume is 0 ~ 50%; Described surface modified diamond particle is at diamond particle surfaces metal lining rete;
Described metallic diaphragm is the metallic film good with diamond wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium; Or
Described metallic diaphragm is composite membrane, and described composite membrane is made up of bottom and surface layer, and described bottom is the metallic film good with diamond wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium; Described surface layer is metallic membrane or alloy film, and according to metallic matrix and underlying metal characteristic, the metallic membrane or the alloy film that form surface layer select unitary film or multilayer film; The material of metallic membrane is selected from and the unitary film of a kind of metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film; Alloy film is selected from and the unitary film of the alloy of at least one metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film;
Described modification diamond particles and surface modified diamond spiral-line volume ratio are (0 ~ 20%): (3 ~ 60%);
The volume ratio of described modification diamond particles and surface modified graphite alkene spiral-line is (0 ~ 20%): (1 ~ 20%).
A kind of spiral-line of the present invention strengthens metal-based compound heat sink material, and the volume ratio of described spiral thermal conductive wire and matrix is 1:0.5 ~ 30; Or: account for 3 ~ 67% of matrix material volume; When diamond volume fraction is suitable, the thermal conductivity of the matrix material that the thermal conductivity that spiral-line strengthens metal-based compound heat sink material is formed compared with modification diamond particles or other forms of modification diamond and matrix metal is the highest is increased to 2 times.
In order to solve above-mentioned second technical problem, the invention provides the preparation method that a kind of spiral-line strengthens metal-based compound heat sink material, adopt a kind of technique in founding, infiltration, cold-rolled sintered, hot pressed sintering, plasma agglomeration, by metallic matrix and spiral thermal conductive wire compound, the spiral-line obtaining spiral thermal conductive wire and metallic matrix metallurgical binding strengthens metal-based compound heat sink material;
Or adopt a kind of technique in founding, infiltration, cold-rolled sintered, hot pressed sintering, plasma agglomeration, to comprise metallic matrix and the spiral thermal conductive wire compound of surface modified diamond particle, the spiral-line obtaining spiral thermal conductive wire and metallic matrix metallurgical binding strengthens metal-base composites;
Described spiral thermal conductive wire is the diamond spiral-line of surface modification or the Graphene spiral-line of surface modification.
A kind of spiral-line of the present invention strengthens the preparation method of metal-based compound heat sink material, and the surface modification of the diamond particles of the diamond spiral-line of surface modification or the Graphene spiral-line of surface modification or surface modification adopts one or more plating modes in magnetron sputtering, multi-arc ion coating, vacuum-evaporation, electroless plating, plating to realize.
A kind of spiral-line of the present invention strengthens the preparation method of metal-based compound heat sink material, the preparation technology of surface modified diamond spiral-line or surface modified graphite alkene spiral-line is, first, after metal wire is wound in helix structure, by chemical gaseous phase depositing process depositing diamond or Graphene on wire spiral skeleton, obtain diamond or the Graphene spiral-line of being with metal substrate; Then, adopt magnetron sputtering, multi-arc ion coating, vacuum-evaporation, electroless plating, one or more plating modes in galvanic deposit at diamond spiral-line or the preparation of Graphene spiral-line surface and diamond or Graphene and the good metallic membrane of metallic matrix wettability;
On wire spiral skeleton, the chemical gaseous phase depositing process of depositing diamond is selected from a kind of method in heated filament auxiliary law, microwave plasma enhancing method, flame combustion process, direct-current discharge method, DC arc plasma jet, low pressure radio frequency method, normal-pressure radio-frequency method, electron cyclotron resonace method, and the diamond film layer thickness of deposition is 0.001 ~ 1mm;
On wire spiral skeleton, the chemical gaseous phase depositing process of deposited graphite alkene is selected from a kind of method in microwave plasma enhancing CVD, radio frequency catalysis CVD, atmospheric pressure cvd, low pressure chemical vapor deposition, ultralow pressure CVD, hot-wall cvd, cold wall CVD, and the graphene film thickness of deposition is 0.34 ~ 10nm.
A kind of spiral-line of the present invention strengthens the preparation method of metal-based compound heat sink material, and adopt chemical gaseous phase depositing process on wire spiral skeleton before depositing diamond or Graphene, carry out pre-treatment to wire spiral skeleton, pretreatment technology is:
For the wire spiral skeleton that can form strong carbide, after its oil removing, scale removal, electrochemical etching, be directly soaked in fine diamond powder suspension liquid, carry out the pre-treatment of ultrasonic oscillation plantation seed crystal;
The wire spiral framework material that can form strong carbide is selected from the one in W, Mo, Ti;
Or
For the wire spiral skeleton that can not form strong carbide, after its oil removing, scale removal, electrochemical etching, adopt physical vapor deposition or electro-deposition techniques can form the film of strong carbide in the preparation of wire spiral skeleton surface, and select individual layer, multilayer or alloy film according to the characteristic of substrate, then, be directly soaked in fine diamond powder suspension liquid and carry out the pre-treatment of ultrasonic oscillation plantation seed crystal;
The metal substrate material that can not form strong carbide is selected from the one in Cu, Ag, Au, Al.
A kind of spiral-line of the present invention strengthens the preparation method of metal-based compound heat sink material, described founding is by containing modification diamond particles or do not put into graphite jig in the lump containing the matrix metal of modification diamond particles and diamond spiral-line or Graphene spiral-line, then put it in vacuum melting furnace or atmosphere protection smelting furnace and be heated to 400 ~ 1300 DEG C of meltings of more than matrix metal fusing point, cooling and demolding, obtains a kind of spiral-line and strengthens metal-base composites;
Or
First matrix metal is heated in crucible more than matrix metal fusing point 400 ~ 1300 DEG C, obtain melting matrix metal, directly diamond spiral-line or the leaching of Graphene spiral-line are placed in liquid matrix metal, or after adding modification diamond particles in melting matrix metal, stirring, diamond spiral-line or the leaching of Graphene spiral-line are placed in liquid matrix metal, cooling, obtains a kind of spiral-line and strengthens metal-based compound heat sink material.
A kind of spiral-line of the present invention strengthens the preparation method of metal-based compound heat sink material, described infiltration is that diamond spiral-line or Graphene spiral-line are placed in infiltration mould, carry out preheating, under vacuum or protective atmosphere environment, to modification diamond particles be contained or not pressurize infiltration in infiltration mould containing the matrix metal of the molten state of modification diamond particles, compound is carried out with diamond spiral-line or Graphene spiral-line, the preheating temperature of diamond spiral-line or Graphene spiral-line controls 400 ~ 1100 DEG C of scopes, infiltration pressure is 8 ~ 30MPa, infiltrating temperature to control more than matrix metal fusing point 400 ~ 1300 DEG C, infiltration soaking time is 0.5 ~ 4 hour, obtain a kind of spiral-line and strengthen metal-based compound heat sink material.
A kind of spiral-line of the present invention strengthens the preparation method of metal-base composites; describedly cold-rolled sinteredly be by matrix metal powder or add in spirrillum diamond wire or spirrillum Graphene line containing the matrix metal powder of modification diamond particles; put into mould coldmoulding; pressure is 400 ~ 800Mpa; then sinter under vacuum or protective atmosphere; sintering temperature to control near matrix metal fusing point 375 ~ 1083 DEG C on the lower side; the sintered heat insulating time is 0.5 ~ 4 hour; cooling and demolding, obtains a kind of spiral-line and strengthens metal-base composites.
A kind of spiral-line of the present invention strengthens the preparation method of metal-base composites; described hot pressed sintering is by matrix metal powder or adds in spirrillum diamond wire or spirrillum Graphene line containing the matrix metal powder of modification diamond particles; put into vacuum hotpressing stove or protective atmosphere hot pressing furnace hot pressed sintering; pressure is 30 ~ 200Mpa; sintering temperature to control near matrix metal fusing point 375 ~ 1083 DEG C on the lower side; the sintered heat insulating time is 0.5 ~ 4 hour; cooling and demolding, obtains a kind of spiral-line and strengthens metal-base composites.
A kind of spiral-line of the present invention strengthens the preparation method of metal-base composites, described plasma agglomeration is by matrix metal powder or adds in spirrillum diamond wire or spirrillum Graphene line containing the matrix metal powder of modification diamond particles, after compacting, put into plasma agglomeration stove, vacuum, pressing pressure is sinter under 30 ~ 70MPa, sintering temperature to control below matrix metal fusing point 375 ~ 1080 DEG C, the sintered heat insulating time is 5 ~ 30 minutes, obtains a kind of spiral-line and strengthens metal-base composites.
The invention provides the preparation method that a kind of spiral-line strengthens metal-based compound heat sink material, described spiral-line and diamond particle surfaces modification adopt one or more plating modes in magnetron sputtering, multi-arc ion coating, vacuum-evaporation, electroless plating, plating to realize.
Contriver according to occurring in nature " water pump " to the effect of current, dexterously " heat pump " concept is incorporated in diamond/metal composite, by diamond of arranging in a metal, diamond and metal is made to form parallel-connection structure, as " water pump ", hot-fluid is constantly extracted out, heat in surrounding metal matrix is constantly sucked in the diamond of nearest neighbour and is quickly drawn out.
Based on above-mentioned thinking, the present invention adopts and build cvd diamond helix structure fine and close continuously and CVD Graphene helix structure in high heat conduction metal matrix, can make between diamond crystals or Graphene intercrystalline formation continuous print passage of heat, thus heat is derived fast towards hand of helix, use magnetron sputtering, multi-arc ion coating, any one plating mode such as vacuum-evaporation or electroless plating is at spiral-line diamond surface or the preparation of spiral-line graphenic surface and diamond or the good metallic film of Graphene wettability, spiral-line diamond surface or spiral-line graphenic surface are after surface metalation, there is at its most top layer preparation and metal base the film of good wettability again, further improve the wettability between diamond thin and metallic matrix metal, realize spiral-line diamond surface or spiral-line graphenic surface and matrix metal metallurgical binding, produce " hot whirlpool " effect, with the addition of the diamond particles through duplex surface modification in matrix material, define series-parallel connection composite structure with spiral-line diamond or spiral-line Graphene, further increase heat transfer efficiency, diamond particles and the diamond spiral-line of modification intercouple, and diamond particles shortens the distance of metallic matrix and diamond spiral-line, promote " hot whirlpool " effect further, greatly improve the overall thermal conductivity of matrix material, adopt the method such as high vacuum infiltration or protective atmosphere infiltration to prepare a kind of spiral-line and strengthen metal-base composites, further promote diamond framework or the interfacial diffusion between Graphene skeleton and matrix metal, enhance interface cohesion, effectively promote interface thermal conductance.Overcome prior art Patent CN102244051A and there is the dissatisfactory defect of thermal conductivity.In other words, this patent no matter in composite structure and composition, or has had huge innovation and improvement in preparation method.
Compared with the prior art, a kind of spiral-line strengthens metal-base composites, spiral-line diamond or spiral-line Graphene and high heat conduction metal matrix is selected to carry out compound, there is following advantage: (1) utilizes CVD technology at the continuous fine and close cvd diamond film of metal spiral rack surface deposition or CVD graphene film, the constructional feature of continuous print spiral-line diamond film or spiral-line graphene film is utilized to solve the bottleneck problem of the heat conductivility difference caused because interface resistance is high of diamond particles in existing diamond particles enhancing metal-base composites, thus improve the heat conductivility of matrix material efficiently, (2) in line style spiral-line surface deposition High Quality Diamond Films, the diamond spiral-line of excellent thermal conductivity is obtained, because metal has larger specific heat, but its thermal conductivity is far below diamond, this must cause the heat in metal will constantly to pass to the diamond wire of neighbour, thus formed " hot whirlpool " the same with " water whirlpool " as natural " wind spout ", derived rapidly after heat in matrix constantly being sucked the diamond wire of nearest neighbour, in addition the diamond particles of modification and diamond spiral-line intercouple, effectively shorten the distance of metallic matrix and diamond spiral-line, " hot whirlpool " effect in further lifting matrix material, make the sudden change of the heat conductivility generation matter of matrix material, the heat conductivility of comparing the matrix material that unmodified diamond particles or other forms of modification diamond and matrix metal are formed is the highest is increased to 2 times, (3) prepare diamond thin or graphene film at spiral-line metal support surface, belong to one-body molded, preparation efficiency is higher, (4) can according to practical situation, design diamond spiral-line is spiral-shaped, the distribution of size, pitch, and handiness is high, (5) by spiral-line diamond or spiral-line Graphene skeleton coating surface one or more layers and diamond or the good metallic film of Graphene wettability, and then with metal base, there is one or more layers film of good wettability in its most top layer preparation, again by different sintering and densification process, the metal of diamond surface or carbide etc. are to diamond and metallic matrix generation interfacial diffusion or reaction, compound interface bonding strength is obviously strengthened, and the thermal conductivity of material can acquire improvement in various degree, (6) in matrix material preparation process, diamond particles after surface modification treatment is joined in matrix metal or powder, by densified sintering product metallization processes, make its Dispersed precipitate in metallic matrix, conduction mode is parallel-series composite mode, contributes to promoting the thermal conductivity that spiral-line strengthens metal-base composites further.
Accompanying drawing explanation
Accompanying drawing 1a is the cylindrical helical line structure schematic diagram used in the embodiment of the present invention 2;
Accompanying drawing 1b is the flat column helix structure schematic diagram used in the embodiment of the present invention 3;
Accompanying drawing 2a is the snail line structure schematic diagram used in the embodiment of the present invention 1,5,10;
Accompanying drawing 2b is that the cylindrical helical line structure used in the embodiment of the present invention 4,6,8 planar curls up the planar spiral structures schematic diagram formed;
Accompanying drawing 2c is that in the embodiment of the present invention 7,9, metal spiral core is the schematic diagram being set with planar spiral structures outside snail line;
The coniform helix structure schematic diagram of accompanying drawing 3 the present invention.
Embodiment
Embodiment one:
Diamond spiral-line reinforced aluminum matrix composites (volume fraction that diamond spiral-line accounts for total composite volume is 15%), concrete preparation process be (1) select diameter be the W silk of 0.3mm as metal substrate, and curl up into as the snail line structure in Fig. 2 a; (2) HF CVD depositing diamond film is adopted, deposition process parameters: heated filament distance 6mm, substrate temperature 800 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, depositing time 40 hours, CH
4/ H
2volume flow ratio 1:99, obtains diamond film thickness 60 μm, namely obtains band metal core diamond spiral-line; (3) adopt magnetically controlled sputter method first to sputter layer of metal W film on belt carcass diamond spiral-line surface, sputtering power is 150W, pressure 0.4Pa, substrate temperature 300 DEG C, and argon flow amount 20sccm, W film thickness is 200nm; (4) the diamond spiral-line of plated surface W is positioned in mould, simultaneously by fine aluminium heat fused to 700 DEG C in crucible, melt is poured in mould, cooling and demolding, take out matrix material.The performance test results: thermal conductivity is 672W/ (mK).
Embodiment two:
Diamond spiral-line strengthens silver-based composite material (volume fraction that diamond spiral-line accounts for total composite volume is 30%), first (1) select diameter be the Mo silk of 0.2mm as metal substrate, and curled up into that diameter is 3mm, diameter is 6mm, cylindrical helix that diameter is 9mm (as Fig. 1 a); (2) HF CVD is adopted to be deposited on each cylindrical helix metal substrate surfaces externally and internally depositing diamond film.Deposition process parameters: heated filament distance 6mm, substrate temperature 850 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, depositing time 200 hours, CH
4/ H
2volume flow ratio 1:99, obtains diamond film thickness 300 μm, namely obtains band metal core diamond spiral-line; (3) adopt magnetically controlled sputter method at diamond spiral-line surface sputtering layer of metal Cr film, sputtering power is 150W, pressure 0.4Pa, substrate temperature 300 DEG C, and argon flow amount 20sccm, Cr film thickness is 300nm; (4) be evenly arranged in mould with the mode orientation of concentric shafts by the cylindric diamond spiral-line of the band metal substrate of three plated surface Cr, arrangement distance 3mm, namely obtains spiral-line diamond array backbone; (5) spiral-line diamond array backbone is fixedly put into mould, Ag alloy is placed on above skeleton, then process furnace is put into, 1000 DEG C of insulation 30min under vacuo, can obtain diamond spiral-line reinforced aluminum matrix composites, heat conductivity is 755W/ (mK).
Embodiment three:
Diamond spiral-line strengthens Cu-base composites (volume fraction that diamond spiral-line accounts for total composite volume is 20%), first (1) selects diameter to be that the Cu silk of 0.5mm is as metal substrate, and to be curled up into cross section be square cylindrical helical line (structure as shown in Figure 1 b), (cross section is long is 5mm, and wide is 3mm), (2) HF CVD depositing diamond film is adopted, deposition process parameters: heated filament distance 6mm, substrate temperature 900 DEG C, hot-wire temperature 2300 DEG C, deposition pressure 3KPa, depositing time 200 hours, CH
4/ H
2volume flow ratio 3:97, obtains diamond film thickness 400 μm, namely obtains band metal core diamond spiral-line, (3) adopt evaporation coating method at diamond spiral-line surface evaporation layer of metal Ti film, evaporation process: power is 200W, pressure 0.3Pa, substrate temperature 350 DEG C, argon flow amount 50sccm, Ti film thickness is 500nm, (4) the diamond spiral-line of plated surface Ti is positioned in mould, (copper powder purity is 99.9% for the gap location filling pure copper powder of diamond spiral-line and bortz powder mixed powder, diamond particles pattern rule, particle size: 80 ~ 100 μm, diamond particles volume fraction is 5%), diamond particles adopts vacuum evaporation technique to prepare Mo/Cu composite film on surface, molybdenum evaporation current is 32A, pressure 0.1Pa, substrate temperature 400 DEG C, Mo film thickness is 0.3 μm, the copper film of vacuum-evaporation layer of metal again, evaporation current is 30A, pressure 0.1Pa, substrate temperature 300 DEG C, thicknesses of layers 1.0 μm, then sample is carried out hot pressed sintering, pressing pressure is 60MPa, and sintering atmosphere is vacuum, and sintering temperature is 1070 DEG C of cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 732W/ (mK).
Embodiment four:
Diamond spiral-line reinforced aluminum matrix composites (volume fraction that diamond spiral-line accounts for total composite volume is 23%), first (1) select diameter be the W silk of 0.2mm as metal substrate, and curl up into as the snail line structure in Fig. 2 b, (2) HF CVD depositing diamond film is adopted, deposition process parameters: heated filament distance 6mm, substrate temperature 800 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, depositing time 200 hours, CH
4/ H
2volume flow ratio 1:99, obtains diamond film thickness 300 μm, namely obtains band metal core diamond spiral-line, (3) adopt magnetically controlled sputter method at the first evaporation layer of metal W film in belt carcass diamond spiral-line surface, power is 150W, pressure 0.4Pa, substrate temperature 300 DEG C, argon flow amount 20sccm, W film thickness is 200nm, and then sputtering one deck Cu film, Cu film thickness is 10 μm, (4) the diamond spiral-line of plated surface W/Cu is positioned in mould, (copper powder purity is 99.9% for the gap location filling pure aluminium powder of diamond spiral-line and bortz powder mixed powder, diamond particles pattern rule, particle size: 80 ~ 100 μm, volume fraction is 7%), diamond particles adopts vacuum evaporation technique to prepare W/Cu composite film on surface, W evaporation current is 32A, pressure 0.1Pa, substrate temperature 400 DEG C, W film thickness is 0.1 μm, the copper film of vacuum-evaporation layer of metal again, evaporation current is 30A, pressure 0.1Pa, substrate temperature 300 DEG C, thicknesses of layers 1.0 μm, carry out hot pressed sintering to sample, sintering temperature is 650 DEG C, sintering pressure 60MPa, soaking time 90min, and atmosphere is vacuum, cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 847W/ (mK).
Embodiment five:
Graphene spiral-line strengthens carbon/carbon-copper composite material (volume fraction that Graphene spiral-line accounts for total composite volume is 13%), first (1) select diameter be the Ni silk of 0.3mm as metal substrate, and curled up into snail line structure (structure is as shown in Figure 2 a); First (2) adopt hot-wall cvd deposited graphite alkene film, are specially: at H
2be heated to 950 DEG C of (H in heat-processed in the atmosphere of Ar
2be respectively 200 and 500mL/min with Ar flow velocity, heat-up rate is 33 DEG C/min), treat that furnace temperature rises to 950 DEG C of postheat treatment 10min; The mixed gas (gas flow rate is respectively methane 5mL/min, hydrogen 200mL/min and argon gas 500mL/min) of CH4, H2 and Ar is passed into after thermal treatment completes, start growing graphene, growth time is 10min, speed of cooling 100 DEG C/min, obtaining graphene film mean thickness is 1.7nm, namely obtains band metal core Graphene spiral-line; (3) adopt electro-plating method at belt carcass Graphene spiral-line electroplating surface layer of metal Cu film, copper film thickness is 500nm; (4) the Graphene spiral-line of plated surface Cu is positioned in mould, the gap location of Graphene spiral-line fills pure copper powder (copper powder purity is 99.9%), carry out cold-rolled sintered to sample, sintering temperature is 1070 DEG C, sintering pressure 600MPa, soaking time 60min, atmosphere is vacuum, cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 978W/ (mK).
Embodiment six:
Graphene spiral-line strengthens aluminum composite (volume fraction that Graphene spiral-line accounts for total composite volume is 10%), first (1) select diameter be the Cu silk of 0.4mm as metal substrate, and curled up into helix structure shown in Fig. 2 b; (2) adopt CVD deposited graphite alkene film, be specially: at H
2be heated to 1030 DEG C of (H in heat-processed in the atmosphere of Ar
2be respectively 200 and 500mL/min with Ar flow velocity, heat-up rate is 40 DEG C/min), treat that furnace temperature rises to 1030 DEG C of postheat treatment 10min; CH is passed into after thermal treatment completes
4, H
2with the mixed gas (gas flow rate is respectively methane 5mL/min, hydrogen 200mL/min and argon gas 500mL/min) of Ar, start growing graphene, growth time is 20min, speed of cooling 80 DEG C/min, obtaining graphene film mean thickness is 3.4nm, namely obtains band metal core Graphene spiral-line; (2) adopt evaporation coating method at belt carcass Graphene spiral-line plated surface layer of metal Cr film, Cr film thickness is 300nm; (3) the Graphene spiral-line of plated surface Cr is positioned in mould, (aluminium powder purity is 99.9% for the gap location filling pure aluminium powder of Graphene spiral-line and bortz powder mixed powder, diamond particles pattern rule, particle size: 100 ~ 120 μm, diamond particles volume fraction is 20%), diamond particles adopts vacuum evaporation technique to prepare W composite film on surface, W evaporation current is 32A, pressure 0.1Pa, substrate temperature 400 DEG C, film thickness is 0.3 μm; Then sample is carried out vacuum heating-press sintering, pressing pressure is 60MPa, and sintering temperature is 650 DEG C of cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 968W/ (mK).
Embodiment seven:
Graphene spiral-line strengthens aluminum composite (volume fraction that Graphene spiral-line accounts for total composite volume is 10%), first (1) select diameter be the Cu silk of 0.3mm as metal substrate, and curled up into helix structure shown in Fig. 2 c; (2) adopt CVD at spiral Cu line surface deposition graphene film, be specially: at H
2be heated to 1030 DEG C of (H in heat-processed in the atmosphere of Ar
2be respectively 200 and 500mL/min with Ar flow velocity, heat-up rate is 40 DEG C/min), treat that furnace temperature rises to 1030 DEG C of postheat treatment 10min; CH is passed into after thermal treatment completes
4, H
2with the mixed gas (gas flow rate is respectively methane 5mL/min, hydrogen 200mL/min and argon gas 500mL/min) of Ar, start growing graphene, growth time is 40min, speed of cooling 80 DEG C/min, obtaining graphene film mean thickness is 6nm, namely obtains band metal core Graphene spiral-line; (3) adopt evaporation coating method at belt carcass Graphene spiral-line plated surface layer of metal W film, W film thickness is 200nm; (4) the Graphene spiral-line of plated surface W is positioned in mould, (aluminium powder purity is 99.99% for the gap location filling fine silver powder of Graphene spiral-line and bortz powder mixed powder, diamond particles pattern rule, particle size: 150 ~ 180 μm, diamond particles volume fraction is 30%), diamond particles adopts vacuum evaporation technique to prepare W composite film on surface, W evaporation current is 32A, pressure 0.1Pa, substrate temperature 400 DEG C, film thickness is 0.2 μm; Then sample is carried out hot pressed sintering, pressing pressure is 60MPa, and sintering temperature is 650 DEG C of cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 1260W/ (mK).
Embodiment eight:
Diamond spiral-line strengthens Cu-base composites (volume fraction that diamond spiral-line accounts for total composite volume is 35%), first (1) select diameter be the WCu B alloy wire of 0.3mm as metal substrate, and curled up into snail line structure (structure is as shown in Figure 2 b); (2) HF CVD depositing diamond film is adopted, deposition process parameters: heated filament distance 6mm, substrate temperature 800 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, depositing time 200 hours, CH
4/ H
2volume flow ratio 1:99, obtains diamond film thickness 300 μm, namely obtains band metal core diamond spiral-line; (3) adopt magnetically controlled sputter method at diamond spiral-line surface sputtering layer of metal WCu alloy film, sputtering power is 150W, pressure 0.4Pa, substrate temperature 300 DEG C, and argon flow amount 20sccm, WCu film thickness is 200nm; (4) adopt hot-wall cvd deposited graphite alkene film, be specially: at H
2be heated to 950 DEG C of (H in heat-processed in the atmosphere of Ar
2be respectively 200 and 500mL/min with Ar flow velocity, heat-up rate is 33 DEG C/min), treat that furnace temperature rises to 950 DEG C of postheat treatment 10min; The mixed gas (gas flow rate is respectively methane 5mL/min, hydrogen 200mL/min and argon gas 500mL/min) of CH4, H2 and Ar is passed into after thermal treatment completes, start growing graphene, growth time is 10min, speed of cooling 100 DEG C/min, obtaining graphene film mean thickness is 1.7nm, namely obtains band metal core Graphene spiral-line; (5) adopt magnetically controlled sputter method at diamond spiral-line surface sputtering layer of metal WCu alloy film, sputtering power is 150W, pressure 0.4Pa, substrate temperature 300 DEG C, and argon flow amount 20sccm, WCu film thickness is 200nm; (6) the diamond spiral-line of plated surface WCu/ Graphene/WCu composite membrane is positioned in mould, the gap location of diamond spiral-line fills pure copper powder (copper powder purity is 99.9%), carry out cold-rolled sintered to sample, sintering temperature is 1070 DEG C, sintering pressure 600MPa, soaking time 60min, atmosphere is vacuum, cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 945W/ (mK).
Embodiment nine:
Diamond spiral-line strengthens Cu-base composites (volume fraction that diamond spiral-line accounts for total composite volume is 40%), concrete preparation process be (1) select diameter be the WCu B alloy wire of 0.4mm as metal substrate, and curl up into as the helix structure in Fig. 2 c; (2) HF CVD depositing diamond film is adopted, deposition process parameters: heated filament distance 6mm, substrate temperature 800 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, depositing time 400 hours, CH
4/ H
2volume flow ratio 1:99, obtains diamond film thickness 600 μm, namely obtains band metal core diamond spiral-line; (3) adopt magnetically controlled sputter method first to sputter layer of metal WCu film on belt carcass diamond spiral-line surface, sputtering power is 150W, pressure 0.4Pa, substrate temperature 300 DEG C, and argon flow amount 20sccm, WCu film thickness is 150nm; (3) plated surface WCu diamond spiral-line is positioned in mould, (copper powder purity is 99.99% for the gap location filling pure copper powder of diamond spiral-line and bortz powder mixed powder, diamond particles pattern rule, particle size: 80 ~ 100 μm, diamond particles volume fraction is 10%), diamond particles adopts vacuum evaporation technique to prepare W composite film on surface, W evaporation current is 32A, pressure 0.1Pa, substrate temperature 400 DEG C, film thickness is 0.3 μm; Then sample is carried out vacuum heating-press sintering, pressing pressure is 60MPa, and sintering temperature is 650 DEG C of cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 1068W/ (mK).
Embodiment ten:
Diamond spiral-line strengthens Cu-base composites (volume fraction that diamond spiral-line accounts for total composite volume is 60%), first (1) selects diameter to be that the WCu silk of 0.5mm is as metal substrate, and to be curled up into cross section be square cylindrical helical line (structure as shown in Figure 2 a), (cross section is long is 5mm, and wide is 3mm), (2) adopt CVD at spiral Cu line surface deposition graphene film, be specially: at H
2with be heated to 1030 DEG C of (H in heat-processed in the atmosphere of Ar
2be respectively 200 and 500mL/min with Ar flow velocity, heat-up rate is 40 DEG C/min), treat that furnace temperature rises to 1030 DEG C of postheat treatment 10min, CH is passed into after thermal treatment completes
4, H
2with the mixed gas (gas flow rate is respectively methane 5mL/min, hydrogen 200mL/min and argon gas 500mL/min) of Ar, start growing graphene, growth time is 40min, speed of cooling 80 DEG C/min, obtaining graphene film mean thickness is 6nm, namely obtains band metal core Graphene spiral-line, (3) adopt evaporation coating method at diamond spiral-line surface evaporation layer of metal WCu film, evaporation process: power is 200W, pressure 0.3Pa, substrate temperature 350 DEG C, argon flow amount 50sccm, WCu film thickness is 300nm, (4) adopt CVD deposited graphite alkene film, be specially: at H
2with be heated to 1030 DEG C of (H in heat-processed in the atmosphere of Ar
2be respectively 200 and 500mL/min with Ar flow velocity, heat-up rate is 40 DEG C/min), treat that furnace temperature rises to 1030 DEG C of postheat treatment 10min, CH is passed into after thermal treatment completes
4, H
2with the mixed gas (gas flow rate is respectively methane 5mL/min, hydrogen 200mL/min and argon gas 500mL/min) of Ar, start growing graphene, growth time is 20min, speed of cooling 80 DEG C/min, and obtaining graphene film mean thickness is 3.4nm, (5) adopt evaporation coating method at diamond spiral-line surface evaporation layer of metal WCu film, evaporation process: power is 200W, pressure 0.3Pa, substrate temperature 350 DEG C, argon flow amount 50sccm, WCu film thickness is 250nm, (6) the diamond spiral-line of plated surface WCu/ Graphene/WCu is positioned in mould, (copper powder purity is 99.9% for the gap location filling pure copper powder of diamond spiral-line and bortz powder mixed powder, diamond particles pattern rule, particle size: 80 ~ 100 μm, diamond particles volume fraction is 10%), diamond particles adopts vacuum evaporation technique to prepare Mo/Cu composite film on surface, molybdenum evaporation current is 32A, pressure 0.1Pa, substrate temperature 400 DEG C, Mo film thickness is 0.2 μm, the copper film of vacuum-evaporation layer of metal again, evaporation current is 30A, pressure 0.1Pa, substrate temperature 300 DEG C, thicknesses of layers 0.2 μm, then sample is carried out hot pressed sintering, pressing pressure is 60MPa, and sintering atmosphere is vacuum, and sintering temperature is 1070 DEG C of cooling and demolding, takes out matrix material.The performance test results: thermal conductivity is 1345W/ (mK).
Embodiment 11
Diamond spiral-line reinforced aluminum matrix composites (volume fraction that diamond spiral-line accounts for total composite volume is 5%), concrete preparation process be (1) select diameter be the W silk of 0.1mm as metal substrate, and curl up into as the snail line structure in Fig. 2 a; (2) HF CVD depositing diamond film is adopted, deposition process parameters: heated filament distance 6mm, substrate temperature 800 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, depositing time 35 hours, CH
4/ H
2volume flow ratio 1:99, obtains diamond film thickness 50 μm, namely obtains band metal core diamond spiral-line; (3) adopt magnetically controlled sputter method first to sputter layer of metal WCu alloy film on belt carcass diamond spiral-line surface, sputtering power is 200W, pressure 0.4Pa, substrate temperature 300 DEG C, and argon flow amount 20sccm, WCu alloy film thickness is 350nm; (4) the diamond spiral-line of plated surface WCu alloy film is positioned in mould, above the diamond spiral-line skeleton simultaneously fine aluminium block being placed on plated surface WCu alloy film, then process furnace is put into, 750 DEG C of insulation 30min under vacuo, can obtain diamond spiral-line reinforced aluminum matrix composites, heat conductivity is 555W/ (mK).
The data obtained from above embodiment, the thermal conductivity that spiral-line obtained in this patent strengthens metal-base composites can reach 1345W/ (mK), strengthens the thermal conductivity (100 ~ 600W/ (mK)) of metal-base composites apparently higher than traditional diamond particles.
Claims (13)
1. spiral-line strengthens a metal-based compound heat sink material, and it is characterized in that: described composite heat sink material is in matrix metal, be provided with spiral thermal conductive wire, spiral thermal conductive wire and matrix metal are metallurgical binding.
2. a kind of spiral-line according to claim 1 strengthens metal-based compound heat sink material, it is characterized in that: described spiral thermal conductive wire is surface modified diamond spiral-line or surface modified graphite alkene spiral-line; The surface of described surface modified diamond spiral-line or surface modified graphite alkene spiral-line is provided with metallic membrane modification.
3. a kind of spiral-line according to claim 2 strengthens metal-based compound heat sink material, it is characterized in that: described metallic membrane is and diamond or the good layer of metal film of Graphene wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium; Or
Described metallic membrane is composite membrane, and described composite membrane is made up of bottom and surface layer, and described bottom is and diamond or the good layer of metal film of Graphene wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium;
Described surface layer is metallic membrane or alloy film, and according to metallic matrix and underlying metal characteristic, the metallic membrane or the alloy film that form surface layer select unitary film or multilayer film; The material of metallic membrane is selected from and the unitary film of a kind of metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film; The material of alloy film is selected from and the unitary film of the alloy of at least one metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film.
4. a kind of spiral-line according to claim 3 strengthens metal-based compound heat sink material, it is characterized in that: described surface modified diamond spiral-line or surface modified graphite alkene spiral-line inside are all containing metal spiral core; Described wire spiral core material is selected from a kind of filament shape silk material in tungsten, molybdenum, copper, titanium, silver, gold or is selected from a kind of filament shape silk material in tungstenalloy, molybdenum alloy, copper alloy, titanium alloy, silver alloys, au-alloy; The diameter of described metal spiral core is 0.014 ~ 2.0mm.
5. a kind of spiral-line according to claim 1 strengthens metal-based compound heat sink material, it is characterized in that: the ratio that described spiral thermal conductive wire volume accounts for composite heat sink all materials long-pending is 1 ~ 80%.
6. a kind of diamond spiral-line according to claim 5 strengthens metal-based compound heat sink material, it is characterized in that: described spiral thermal conductive wire is surface modified diamond spiral-line; Described surface modified diamond spiral-line surface is provided with alloy film or composite membrane modification, and inside is all containing tungsten-copper alloy spiral core; Described tungsten-copper alloy spiral-line core material is the filament shape silk material of tungsten-copper alloy; The diameter of described tungsten-copper alloy spiral core is 0.014 ~ 2.0mm; Described alloy film is the tungsten-copper alloy film good with diamond wettability, and thickness is 100 ~ 400nm; Described composite membrane is tungsten-copper alloy film/graphene film/tungsten-copper alloy film, and thickness is 100 ~ 300nm/0.34 ~ 10nm/100 ~ 300nm; Described graphene film adopts chemical Vapor deposition process preparation.
7. a kind of spiral-line according to claim 4 or 6 strengthens metal-based compound heat sink material, it is characterized in that: described metal spiral core or tungsten-copper alloy spiral core be selected from snail line, cylindrical helical line, coniform spiral line any one; Or
Described metal spiral core or tungsten-copper alloy spiral core are selected from and are planar curled up by cylindrical helical line structure and the planar spiral structures formed, to be curled up in space by cylindrical helical line structure and any one in the cylindrical helical structure formed or coniform spiral structure; Or
Described metal spiral core or tungsten-copper alloy spiral core are selected from any one that to be set with outside snail line and to be set with outside planar spiral structures, cylindrical helical line and to be set with in coniform spiral structure outside cylindrical helical structure, coniform spiral line.
8. a kind of spiral-line according to claim 7 strengthens metal-based compound heat sink material, it is characterized in that: described matrix metal is high conduction light heat metallic substance, specifically refer to the one in a kind of or aluminium alloy in metallic aluminium, copper, silver, copper alloy, silver alloys.
9. a kind of spiral-line according to claim 8 strengthens metal-based compound heat sink material, it is characterized in that: in described metallic matrix, be also distributed with the diamond particles through surface modification, diamond particles and metallic matrix are metallurgical binding, diamond particles granularity is 1 ~ 200 μm, and the percentage composition that described diamond particles accounts for total composite volume is 0 ~ 50%; Described surface modified diamond particle is at diamond particle surfaces metal lining rete;
Described metallic diaphragm is the metallic film good with diamond wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium; Or
Described metallic diaphragm is composite membrane, and described composite membrane is made up of bottom and surface layer, and described bottom is the metallic film good with diamond wettability, is specifically selected from a kind of metallic film in chromium metal, tungsten, molybdenum, nickel, titanium; Described surface layer is metallic membrane or alloy film, and according to metallic matrix and underlying metal characteristic, the metallic membrane or the alloy film that form surface layer select unitary film or multilayer film; The material of metallic membrane is selected from and the unitary film of a kind of metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film; Alloy film is selected from and the unitary film of the alloy of at least one metal in matrix metal and/or the good vanadium metal of underlying metal wettability, tungsten, copper, titanium, molybdenum, nickel, cobalt, aluminium, silver or multilayer film.
10. the preparation method of a spiral-line enhancing metal-based compound heat sink material, it is characterized in that: be adopt a kind of technique in founding, infiltration, cold-rolled sintered, hot pressed sintering, plasma agglomeration, by metallic matrix and spiral thermal conductive wire compound, the spiral-line obtaining spiral thermal conductive wire and metallic matrix metallurgical binding strengthens metal-based compound heat sink material;
Or adopt a kind of technique in founding, infiltration, cold-rolled sintered, hot pressed sintering, plasma agglomeration, to comprise metallic matrix and the spiral thermal conductive wire compound of surface modified diamond particle, the spiral-line obtaining spiral thermal conductive wire and metallic matrix metallurgical binding strengthens metal-base composites;
Described spiral thermal conductive wire is the diamond spiral-line of surface modification or the Graphene spiral-line of surface modification.
11. a kind of spiral-linees according to claim 10 strengthen the preparation method of metal-based compound heat sink material, it is characterized in that: the surface modification of the diamond particles of the diamond spiral-line of surface modification or the Graphene spiral-line of surface modification or surface modification adopts one or more plating modes in magnetron sputtering, multi-arc ion coating, vacuum-evaporation, electroless plating, plating to realize.
12. a kind of spiral-linees according to claim 11 strengthen the preparation method of metal-based compound heat sink material, it is characterized in that: the preparation technology of surface modified diamond spiral-line or surface modified graphite alkene spiral-line is, first, after metal wire is wound in helix structure, by chemical gaseous phase depositing process depositing diamond or Graphene on wire spiral skeleton, obtain diamond or the Graphene spiral-line of being with metal substrate; Then, adopt magnetron sputtering, multi-arc ion coating, vacuum-evaporation, electroless plating, one or more plating modes in galvanic deposit at diamond spiral-line or the preparation of Graphene spiral-line surface and diamond or Graphene and the good metallic membrane of metallic matrix wettability;
On wire spiral skeleton, the chemical gaseous phase depositing process of depositing diamond is selected from a kind of method in heated filament auxiliary law, microwave plasma enhancing method, flame combustion process, direct-current discharge method, DC arc plasma jet, low pressure radio frequency method, normal-pressure radio-frequency method, electron cyclotron resonace method, and the diamond film layer thickness of deposition is 0.001 ~ 1mm;
On wire spiral skeleton, the chemical gaseous phase depositing process of deposited graphite alkene is selected from a kind of method in microwave plasma enhancing CVD, radio frequency catalysis CVD, atmospheric pressure cvd, low pressure chemical vapor deposition, ultralow pressure CVD, hot-wall cvd, cold wall CVD, and the graphene film thickness of deposition is 0.34 ~ 10nm.
13. a kind of spiral-linees according to claim 10 strengthen the preparation method of metal-based compound heat sink material, it is characterized in that: adopt chemical gaseous phase depositing process on wire spiral skeleton before depositing diamond or Graphene, carry out pre-treatment to wire spiral skeleton, pretreatment technology is:
For the wire spiral skeleton that can form strong carbide, after its oil removing, scale removal, electrochemical etching, be directly soaked in fine diamond powder suspension liquid, carry out the pre-treatment of ultrasonic oscillation plantation seed crystal;
The wire spiral framework material that can form strong carbide is selected from the one in W, Mo, Ti;
Or
For the wire spiral skeleton that can not form strong carbide, after its oil removing, scale removal, electrochemical etching, adopt physical vapor deposition or electro-deposition techniques can form the film of strong carbide in the preparation of wire spiral skeleton surface, and select individual layer, multilayer or alloy film according to the characteristic of substrate, then, be directly soaked in fine diamond powder suspension liquid and carry out the pre-treatment of ultrasonic oscillation plantation seed crystal;
The metal substrate material that can not form strong carbide is selected from the one in Cu, Ag, Au, Al.
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