CN105449091B - A kind of high-power LED encapsulating structure - Google Patents
A kind of high-power LED encapsulating structure Download PDFInfo
- Publication number
- CN105449091B CN105449091B CN201510910754.5A CN201510910754A CN105449091B CN 105449091 B CN105449091 B CN 105449091B CN 201510910754 A CN201510910754 A CN 201510910754A CN 105449091 B CN105449091 B CN 105449091B
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- China
- Prior art keywords
- fixedly connected
- copper base
- framework
- heat absorption
- screen pack
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- 238000010521 absorption reaction Methods 0.000 claims abstract description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- 239000004332 silver Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000741 silica gel Substances 0.000 claims abstract description 21
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 21
- 238000004020 luminiscence type Methods 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000012780 transparent material Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000001914 filtration Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 206010067484 Adverse reaction Diseases 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
A kind of high-power LED encapsulating structure, including lens, framework, copper base, positive terminal, negative terminal, blower fan apparatus and heat sink, lens are in hollow hemisphere, lens are made of transparent material, framework is provided with level crossing, layer of silica gel, copper base is provided with first through hole, first fixed block, silver coating, second through hole, third through-hole and LED luminescence chips, blower fan apparatus includes blower fan, pipeline, first screen pack and the second screen pack, heat sink includes heat absorption frame, fourth hole, water pipe, first support and second support, the present invention can use high-power LED lamp, and without worrying the temperature of radiating, good heat dissipation effect.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of high-power LED encapsulating structure.
Background technology
In LED encapsulation structure, for power because cradling function region area mistake in the LED encapsulation structure within 100W
It is small, LED chip arrangement too closely cause to radiate during use it is bad, silica gel colloid face temperature it is too high and cause dead lamp etc. its
His adverse reaction, simultaneously because the softer wire that easily weighed wounded in installation process of the colloid of traditional box dam frame causes dead lamp, and
And the air-tightness of box dam frame is bad, hot spot is poor, the service life and stability of high-powered LED lamp have impact on.
Accordingly, it is desirable to provide a kind of new technical scheme solves above-mentioned technical problem.
The content of the invention
It is an object of the invention to provide a kind of high-power LED encapsulating structure that can effectively solve above-mentioned technical problem.
In order to solve the above-mentioned technical problem, the present invention adopts the following technical scheme that:
A kind of high-power LED encapsulating structure, the high-power LED encapsulating structure include lens, positioned at the lens
The framework of lower section, the copper base below the framework, positive terminal, the negative terminal being arranged on the copper base
Terminal, the blower fan apparatus below the copper base and the heat sink on the left of the blower fan apparatus, the lens are in
Hollow hemisphere, the lens are made of transparent material, and the framework is provided with level crossing, below the level crossing
Layer of silica gel, the copper base is provided with through the first through hole of its upper and lower surface, the first fixed block above, silver-plated
Layer, the second through hole through the copper base upper and lower surface, the third through-hole positioned at the second through hole side and positioned at described
LED luminescence chips above silver coating, the positive terminal are arranged at the right side above the copper base, and with the copper
Electrical property of substrate connects, and the negative terminal is arranged on the copper base and is electrically connected with the copper base, the wind
Machine device includes blower fan, the pipeline being arranged on the blower fan, the first screen pack on the right side of the pipeline and positioned at described
The second screen pack on the right side of first screen pack, the heat sink include heat absorption frame, the four-way being arranged on the heat absorption frame
Hole, positioned at it is described heat absorption inframe water pipe, positioned at it is described heat absorption frame on the left of first support and positioned at it is described heat absorption frame below
Second support.
The framework is in hollow cylinder, and the framework is placed vertically, the lower surface of the lens and the framework
Upper surface is fixedly connected, and the lower surface of the framework is fixedly connected with the upper surface of the copper base.
The level crossing is in cylinder, and the level crossing is horizontal positioned, and the side of the level crossing is interior with the framework
Surface is fixedly connected, and the upper surface of the level crossing and the upper surface of the framework are in same level, the layer of silica gel
In cylinder, the side of the layer of silica gel is fixedly connected with the inner surface of the framework, the upper surface of the layer of silica gel with it is described
The lower surface of level crossing is fixedly connected, and is provided with first passage in the layer of silica gel, and the first passage is in concave shape, and described first
The both ends of passage communicate with the lower surface of the layer of silica gel.
The first through hole is provided with two and is located at the left and right sides respectively, and first fixed block is provided with two and respectively position
In the left and right sides, the cross section of first fixed block is triangular in shape, lower surface and the copper base of first fixed block
Upper surface be fixedly connected, the side of first fixed block is fixedly connected with the side of the framework, the silver coating in circle
Cylinder, the lower surface of the silver coating are fixedly connected with the copper base, the side of the silver coating and the interior table of the framework
Face is fixedly connected, and the silver coating is provided with second channel and the third channel on the right side of the second channel.
The second channel is L-shaped, and one end of the second channel communicates with the lower surface of the silver coating, and described second
The other end of passage communicates with the upper surface of the silver coating, and the upper end of the second channel communicates with the first passage, institute
State that third channel is L-shaped, one end of the third channel communicates with the lower surface of the silver coating, the third channel it is another
End communicates with the upper surface of the silver coating, and the upper end of the third channel communicates with the first passage, and the LED lights core
Piece is provided with two and is located at the left and right sides respectively, and the LED luminescence chips are arranged on the silver coating.
The pipeline is L-shaped, and one end of the pipeline is directed at the third through-hole and consolidated with the lower surface of the copper base
Fixed connection, first screen pack be in cuboid, and first screen pack is placed vertically, the upper surface of first screen pack and
The lower surface of the copper base is fixedly connected, and the right-hand member of the pipeline is fixedly connected with the left surface of first screen pack.
The cross section of second screen pack is L-shaped, one end of second screen pack and the lower surface of the copper base
It is fixedly connected, the other end of second screen pack is fixedly connected with the right surface of first screen pack.
The heat absorption frame is in hollow cuboid, and the cross section of the heat absorption frame is in concave shape, the upper table of the heat absorption frame
Face is fixedly connected with the lower surface of the copper base, and the heat absorption frame is made of Heat Conduction Material, and the fourth hole is arranged at
On the lower surface of the heat absorption frame, the fourth hole communicates with the inside of the heat absorption frame.
The water pipe is provided with several and is evenly distributed on the heat absorption inframe, and the water pipe is made of Heat Conduction Material,
The first support is L-shaped, and one end of the first support is fixedly connected with the lower surface of the copper base, the first support
The other end be fixedly connected with the left surface of the heat absorption frame, the second support is in concave shape, one end of the second support
It is fixedly connected with the lower surface of the heat absorption frame, the other end of the second support is fixedly connected with the pipeline.
After adopting the above technical scheme, the invention has the advantages that:
High-power LED encapsulating structure of the present invention is easy to use, simple in construction, can use high-power LED lamp, without
With the temperature for worrying radiating, good heat dissipation effect so that high-power LED chip still can normally work, so as to full
The specific demand of foot, expand the scope of application of product.
Brief description of the drawings
The embodiment of high-power LED encapsulating structure of the present invention is described further below in conjunction with the accompanying drawings:
Fig. 1 is the structural representation of high-power LED encapsulating structure of the present invention.
Embodiment
As shown in figure 1, high-power LED encapsulating structure of the present invention includes lens 1, the framework positioned at the lower section of lens 1
2nd, the copper base 3 positioned at the lower section of framework 2, the positive terminal 6, the negative terminal that are arranged on the copper base 3
7th, the blower fan apparatus 4 positioned at the lower section of copper base 3 and the heat sink 5 positioned at the left side of blower fan apparatus 4.
As shown in figure 1, the lens 1 are in hollow hemisphere, the lens 1 are made of transparent material.The framework 2
In hollow cylinder, the framework 2 is placed vertically, and the upper surface of the lower surface of the lens 1 and the framework 2, which is fixed, to be connected
Connect, the lower surface of the framework 2 is fixedly connected with the upper surface of the copper base 3, and the framework 2 is provided with level crossing 21, position
Layer of silica gel 22 in the lower section of level crossing 21.The level crossing 21 is in cylinder, and the level crossing 21 is horizontal positioned, described flat
The side of face mirror 21 is fixedly connected with the inner surface of the framework 2, the upper surface of the level crossing 21 and the upper table of the framework 2
Face is in same level.The layer of silica gel 22 is in cylinder, the side of the layer of silica gel 22 and the inner surface of the framework 2
It is fixedly connected, the upper surface of the layer of silica gel 22 is fixedly connected with the lower surface of the level crossing 21.Set in the layer of silica gel 22
Have a first passage 221, the first passage 221 is in concave shape, the both ends of the first passage 221 with the layer of silica gel 22
Surface communicates.
As shown in figure 1, the copper base 3 is in cuboid, the copper base 3 is horizontal positioned, and the copper base 3 is provided with and passed through
Wear the first through hole 31 of its upper and lower surface, the first fixed block 32 above, silver coating 33, through the copper base about 3
Second through hole 34 on surface, the third through-hole 35 positioned at the side of the second through hole 34 and above the silver coating 33
LED luminescence chips.The first through hole 31 is provided with two and is located at the left and right sides respectively, and the first through hole 31 is in cylinder
Shape.First fixed block 32 is provided with two and is located at the left and right sides respectively, and the cross section of first fixed block 32 is in triangle
Shape, the lower surface of first fixed block 32 are fixedly connected with the upper surface of the copper base 3, the side of first fixed block 32
Face is fixedly connected with the side of the framework 2.The silver coating 33 is in cylinder, the lower surface of the silver coating 33 and the copper
Substrate 3 is fixedly connected, and the side of the silver coating 33 is fixedly connected with the inner surface of the framework 2, is set on the silver coating 33
There are second channel 331 and the third channel 332 positioned at the right side of second channel 331.The second channel 331 is L-shaped, described
One end of second channel 331 communicates with the lower surface of the silver coating 33, the other end of the second channel 331 with it is described silver-plated
The upper surface of layer 33 communicates, and the upper end of the second channel 331 communicates with the first passage 221.The third channel 332 is in
L-type, one end of the third channel 332 communicate with the lower surface of the silver coating 33, the other end of the third channel 332 with
The upper surface of the silver coating 33 communicates, and the upper end of the third channel 332 communicates with the first passage 221, so, it is described
First passage 221 communicates with the second channel 331 and third channel 332.The LED luminescence chips are provided with two and respectively position
In the left and right sides, the LED luminescence chips are arranged on the silver coating, and the LED luminescence chips are used to produce light.
As shown in figure 1, the positive terminal 6 is arranged at the right side of the top of the copper base 3, and with the copper base
3 are electrically connected with, and the negative terminal 7 is arranged on the copper base 3 and is electrically connected with the copper base 3.
As shown in figure 1, the blower fan apparatus 4 includes blower fan 41, the pipeline 42 being arranged on the blower fan 41, positioned at described
First screen pack 43 on the right side of pipeline 42 and the second screen pack 44 positioned at the right side of the first screen pack 43.The pipeline 42 is in
L-type, one end of the pipeline 42 are directed at the third through-hole 35 and are fixedly connected with the lower surface of the copper base 3 so that institute
The inside for stating pipeline 42 communicates with the inside of the third through-hole 35.The blower fan 41 is arranged on the pipeline 42, for inciting somebody to action
Extraneous air is drawn into pipeline 42.First screen pack 43 is in cuboid, and first screen pack 43 is placed vertically, institute
The upper surface for stating the first screen pack 43 is fixedly connected with the lower surface of the copper base 3, the right-hand member of the pipeline 42 and described the
The left surface of one screen pack 43 is fixedly connected so that the air entered in the pipeline 42 has to pass through the first screen pack 43
Filtering.The cross section of second screen pack 44 is L-shaped, one end of second screen pack 44 and the following table of the copper base 3
Face is fixedly connected, and the other end of second screen pack 44 is fixedly connected with the right surface of first screen pack 43 so that is entered
Enter to the air in the pipeline 42 to have to pass through the filtering of the second screen pack 44, so as to carry out double filtration to air,
The first screen pack 43 can be played a supporting role simultaneously.
As shown in figure 1, the heat sink 5 include heat absorption frame 51, be arranged at it is described heat absorption frame 51 on fourth hole 52,
Water pipe 53 in the heat absorption frame 51, the first support 54 positioned at heat absorption frame 51 left side and positioned at the heat absorption frame 51
The second support 55 of lower section.The heat absorption frame 51 is in hollow cuboid, and the cross section of the heat absorption frame 51 is in concave shape, described
The upper surface of heat absorption frame 51 is fixedly connected with the lower surface of the copper base 3, and the heat absorption frame 51 is made of Heat Conduction Material.Institute
State fourth hole 52 to be arranged on the lower surface of the heat absorption frame 51, the fourth hole 52 is in cylindrical shape, the four-way
Hole 52 communicates with the inside of the heat absorption frame 51.The water pipe 53 is provided with several and is evenly distributed in the heat absorption frame 51,
The water pipe 53 is made of Heat Conduction Material.The first support 54 is L-shaped, one end of the first support 54 with it is described copper-based
The lower surface of plate 3 is fixedly connected, and the other end of the first support 54 is fixedly connected with the left surface of the heat absorption frame 51, so as to
The heat absorption frame 51 is played a supporting role.The second support 55 is in concave shape, one end of the second support 55 with it is described
The lower surface of heat absorption frame 51 is fixedly connected, and the other end of the second support 55 is fixedly connected with the pipeline 42.
As shown in figure 1, the high-power LED encapsulating structure of the present invention is in use, LED luminescence chips can light, then
After layer of silica gel 22 and level crossing 21, it is then passed through lens 1 and reflects away, positive terminal 6 and negative terminal is electrical
Connect external power source.When temperature inside framework 2 is too high, start blower fan 41 so that extraneous air passes through the second screen pack
44 and first screen pack 43 filtering after, enter in pipeline 42, then into third through-hole 35, then into the 3rd
Pipeline 332, the LED luminescence chips for being pointed to right side are radiated, then into the first pipeline 221, then into the
In two pipelines 331, radiated so as to be pointed to the LED luminescence chips in left side, then into second pipe 34, so
After enter heat absorption frame 51 in, discharged after water pipe 53 cools down to gas, prevent pollute environment.So far, the present invention is big
The LED encapsulation structure of power is finished using process description.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those skilled in the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be covered
Within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (9)
- A kind of 1. high-power LED encapsulating structure, it is characterised in that:The high-power LED encapsulating structure include lens (1), Framework (2) below the lens (1), the copper base (3) below the framework (2), it is arranged at the copper base (3) positive terminal (6), negative terminal (7) on, the blower fan apparatus (4) below the copper base (3) and position Heat sink (5) on the left of the blower fan apparatus (4), the lens (1) are in hollow hemisphere, and the lens (1) use Transparent material is made, and the framework (2) is provided with level crossing (21), the layer of silica gel (22) below the level crossing (21), The copper base (3) is provided with through the first through hole (31) of its upper and lower surface, the first fixed block (32) above, silver-plated Layer (33), the second through hole (34) through the copper base (3) upper and lower surface, the positioned at the second through hole (34) side the 3rd Through hole (35) and the LED luminescence chips above the silver coating (33), the positive terminal (6) are arranged at the copper Right side above substrate (3), and be electrically connected with the copper base (3), the negative terminal (7) is arranged at described copper-based It is electrically connected with plate (3) and with the copper base (3), the blower fan apparatus (4) includes blower fan (41), is arranged at the blower fan (41) pipeline (42) on, the first screen pack (43) on the right side of the pipeline (42) and positioned at first screen pack (43) Second screen pack (44) on right side, the heat sink (5) include heat absorption frame (51), be arranged on heat absorption frame (51) the Four through holes (52), the water pipe (53) in the heat absorption frame (51), the first support on the left of the heat absorption frame (51) And the second support (55) below heat absorption frame (51) (54).
- 2. high-power LED encapsulating structure according to claim 1, it is characterised in that:The framework (2) is in hollow circle Cylinder, the framework (2) are placed vertically, and the lower surface of the lens (1) is fixedly connected with the upper surface of the framework (2), institute The lower surface for stating framework (2) is fixedly connected with the upper surface of the copper base (3).
- 3. high-power LED encapsulating structure according to claim 2, it is characterised in that:The level crossing (21) is in cylinder Body, the level crossing (21) is horizontal positioned, and the side of the level crossing (21) is fixedly connected with the inner surface of the framework (2), The upper surface of the level crossing (21) is in same level with the upper surface of the framework (2), and the layer of silica gel (22) is in Cylinder, the side of the layer of silica gel (22) are fixedly connected with the inner surface of the framework (2), the upper table of the layer of silica gel (22) Face is fixedly connected with the lower surface of the level crossing (21), is provided with first passage (221) in the layer of silica gel (22), and described first Passage (221) is in concave shape, and the both ends of the first passage (221) communicate with the lower surface of the layer of silica gel (22).
- 4. high-power LED encapsulating structure according to claim 3, it is characterised in that:The first through hole (31) is provided with Two and it is located at the left and right sides respectively, first fixed block (32) is provided with two and is located at the left and right sides respectively, and described first The cross section of fixed block (32) is triangular in shape, the lower surface of first fixed block (32) and the upper surface of the copper base (3) It is fixedly connected, the side of first fixed block (32) is fixedly connected with the side of the framework (2), and the silver coating (33) is in Cylinder, the lower surface of the silver coating (33) are fixedly connected with the copper base (3), the side of the silver coating (33) and institute The inner surface for stating framework (2) is fixedly connected, and the silver coating (33) is provided with second channel (331) and positioned at the second channel (331) third channel (332) on the right side of.
- 5. high-power LED encapsulating structure according to claim 4, it is characterised in that:The second channel (331) is in L Type, one end of the second channel (331) communicate with the lower surface of the silver coating (33), the second channel (331) it is another One end communicates with the upper surface of the silver coating (33), upper end and the first passage (221) phase of the second channel (331) Logical, the third channel (332) is L-shaped, one end of the third channel (332) and the lower surface phase of the silver coating (33) Logical, the other end of the third channel (332) communicates with the upper surface of the silver coating (33), the third channel (332) Upper end communicates with the first passage (221), and the LED luminescence chips are provided with two and are located at the left and right sides, the LED respectively Luminescence chip is arranged on the silver coating (33).
- 6. high-power LED encapsulating structure according to claim 5, it is characterised in that:The pipeline (42) is L-shaped, institute The one end for stating pipeline (42) is directed at the third through-hole (35) and is fixedly connected with the lower surface of the copper base (3), and described the One screen pack (43) is in cuboid, first screen pack (43) vertically place, the upper surface of first screen pack (43) with The lower surface of the copper base (3) is fixedly connected, the right-hand member of the pipeline (42) and the left surface of first screen pack (43) It is fixedly connected.
- 7. high-power LED encapsulating structure according to claim 6, it is characterised in that:Second screen pack (44) Cross section is L-shaped, and one end of second screen pack (44) is fixedly connected with the lower surface of the copper base (3), and described second The other end of screen pack (44) is fixedly connected with the right surface of first screen pack (43).
- 8. high-power LED encapsulating structure according to claim 7, it is characterised in that:The heat absorption frame (51) is in hollow Cuboid, it is described heat absorption frame (51) cross section be in concave shape, it is described heat absorption frame (51) upper surface and the copper base (3) Lower surface be fixedly connected, it is described heat absorption frame (51) be made of Heat Conduction Material, the fourth hole (52) is arranged at the suction On the lower surface of hot frame (51), the fourth hole (52) communicates with the inside of the heat absorption frame (51).
- 9. high-power LED encapsulating structure according to claim 8, it is characterised in that:The water pipe (53) is provided with some Individual and be evenly distributed in heat absorption frame (51), the water pipe (53) is made of Heat Conduction Material, the first support (54) L-shaped, one end of the first support (54) is fixedly connected with the lower surface of the copper base (3), the first support (54) The other end be fixedly connected with the left surface of the heat absorption frame (51), the second support (55) is in concave shape, described second One end of frame (55) is fixedly connected with the lower surface of the heat absorption frame (51), the other end and the pipe of the second support (55) Road (42) is fixedly connected.
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CN105449091B true CN105449091B (en) | 2018-01-19 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101294699A (en) * | 2008-04-01 | 2008-10-29 | 蒋仲林 | LED lamp |
CN101820044A (en) * | 2010-04-09 | 2010-09-01 | 江苏伯乐达光电科技有限公司 | Metal substrate and light-emitting diode encapsulation method of metal substrate |
CN201629333U (en) * | 2010-01-08 | 2010-11-10 | 宝得科技(大连)有限公司 | LED device for emitting ultraviolet light |
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JP4085376B2 (en) * | 2003-02-25 | 2008-05-14 | ノーリツ鋼機株式会社 | LED light source device |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101294699A (en) * | 2008-04-01 | 2008-10-29 | 蒋仲林 | LED lamp |
CN201629333U (en) * | 2010-01-08 | 2010-11-10 | 宝得科技(大连)有限公司 | LED device for emitting ultraviolet light |
CN101820044A (en) * | 2010-04-09 | 2010-09-01 | 江苏伯乐达光电科技有限公司 | Metal substrate and light-emitting diode encapsulation method of metal substrate |
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