CN105420700A - Polyimide circuit board and manufacturing method thereof - Google Patents

Polyimide circuit board and manufacturing method thereof Download PDF

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Publication number
CN105420700A
CN105420700A CN201410479686.7A CN201410479686A CN105420700A CN 105420700 A CN105420700 A CN 105420700A CN 201410479686 A CN201410479686 A CN 201410479686A CN 105420700 A CN105420700 A CN 105420700A
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concentration
chemical
polyimide
adhesive tape
present
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CN105420700B (en
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韦家亮
李永辉
林宏业
连俊兰
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BYD Co Ltd
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BYD Co Ltd
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Abstract

The invention discloses a manufacturing method of a polyimide circuit board. The method includes the following steps that (1) laser etching is conducted on adhesive tape, and the adhesive tape is burnt through to form a circuit; and (2) the adhesive tape with the circuit is bonded to a polyimide film, and chemical plating treatment is conducted after surface treatment is conducted. By the adoption of the manufacturing method of the polyimide circuit board, the manufactured polyimide circuit is finer; besides, the manufacturing method is simple, and the technological process is simpler and environmentally friendly.

Description

A kind of polyimide circuits plate and preparation method thereof
Technical field
The invention belongs to Chemical Plating of Non metal Material field, particularly, relate to a kind of polyimide circuits plate and preparation method thereof.
Background technology
Microelectronic packaging technology is to high speed, and lightness future development, requires that baseplate material has lower specific inductivity, the resistivity of metal line material is low, deelectric transferred ability is high, and the specific inductivity of polyimide is low, flexible, anti-power is strong, high temperature resistant, therefore, polyimide substantially on be desirable substrate used for electronic packaging, in civil electronic device products, be widely used in communication device.
For the polyimide substrate used at present, sizing agent is usually used to obtain substrate as Copper Foil is pasted on polyimide surface by epoxy resin.This method technical maturity, quality product is more stable.But for realizing the High Density Packaging of electronic equipments, the structure of above-mentioned copper foil fully can not meet the requirement of filming, in addition, there is following problems in the circuit substrate employing sizing agent: 1, the etching solution solution of Copper Foil infiltrates binder layer, the transfer of copper may be there is when hot and humid lower applying pressure, cause short circuit; 2, the poor dimensional stability of tackiness agent; 3, make the microfabrication of circuit substrate become difficulty, be difficult to adapt to densification; 4, the thermal property of adhesive layer is poorer than baseplate material, and thermostability has problems, and is difficult to realize densification; 5, product easily deforms.
In addition, also usually adopt ink part polyimide (PI) film not being formed circuit to be covered in prior art, after last circuit is formed, this ink layer is difficult to remove, and affects wiring board outward appearance.
Therefore, as why not used tackiness agent and directly form metalized film, and compared with traditional method, how to make that preparation method is simple, cost is lower, do not need exposure imaging and etching, the research of the preparation method of a kind of polyimide circuits plate of environmental protection more and more comes into one's own.
Summary of the invention
The object of the invention is in removal masking process process, to need to use chemical reagent and subsequent technique etching and easily to environment to overcome in prior art, and the defect of complex process, and the polyimide circuit providing a kind of preparation method of polyimide circuits plate to make to prepare is meticulousr, and the simple and environmental protection of this preparation method.
To achieve these goals, the invention provides a kind of preparation method of polyimide circuits plate, the method comprises the following steps:
(1) laser ablation is carried out to adhesive tape, burn this adhesive tape to form circuit;
(2) adhesive tape being formed with circuit is bonded on polyimide film, after surface treatment, carries out electroless plating process again.
Present invention also offers a kind of polyimide circuits plate prepared by method described above.
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and this preparation method is simple, technological process is simpler, decrease and need the chemical reagent used to the pollution problem of environment in preparation and removal masking process process, and in subsequent handling, remove polyimide film only need tear gently, different from general removal masking process chemical reagent, simple and environmental protection.
Other features and advantages of the present invention are described in detail in embodiment part subsequently.
Embodiment
Below the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
According to the present invention, the invention provides a kind of preparation method of polyimide circuits plate, the method comprises the following steps:
(1) laser ablation is carried out to adhesive tape, burn this adhesive tape to form circuit;
(2) adhesive tape being formed with circuit is bonded on polyimide film, after surface treatment, carries out electroless plating process again.
According to the present invention, in step (1), described adhesive tape is not particularly limited, as long as can be bonded together well with polyimide film, in the present invention, described adhesive tape can be polyimide Pressuresensitive Tape and/or polyacrylic film Pressuresensitive Tape, and preferably, described adhesive tape is polyimide (PI) Pressuresensitive Tape.
According to the present invention, in step (1), first adhesive tape is fixed, the device be fixed on is not particularly limited, and can be any metallic matrix, such as, in certain embodiment of the application, can adhesive tape be fixed on stainless-steel sheet, such as, and fixing method is also not particularly limited, and in certain embodiment of the application, gripping unit can be adopted adhesive tape two head clamping.
According to the present invention, in step (1), carry out laser ablation to adhesive tape, wherein, laser ablation can be once etch, also can be multiple etching, once etching directly can be burnt and be formed circuit (groove) on adhesive tape, and multiple etching can burn the hole forming multiple circle on adhesive tape, and the hole of multiple circle may link together, therefore, formation circuit (groove) may also be burnt on adhesive tape.In the present invention, concrete etching number of times does not limit, and forms predetermined circuit (groove) as long as the adhesive tape be fixed on stainless-steel sheet (polyimide Pressuresensitive Tape) can be burnt.
According to the present invention, after laser ablation, adhesive tape is burnt, therefore, the width of the circuit (groove) formed on adhesive tape after laser ablation is the width that laser burns, and the degree of depth of the circuit (groove) formed on adhesive tape after laser ablation is the thickness of adhesive tape; In the present invention, the width of the circuit (groove) that adhesive tape is formed refers to the size of the maximum diameter of this circular opening, and in like manner, the degree of depth of the hole that adhesive tape is formed refers to the degree of depth of the circuit (groove) formed on tape surface; In the present invention, in step (1), the width of the circuit (groove) formed on adhesive tape after laser ablation can be 0.2-3000 μm, is preferably 1-1000 μm.
According to the present invention, in step (1), what adopted is not particularly limited the laser apparatus that adhesive tape etches, in the present invention, the model that described laser apparatus can be produced for Chinese workers' laser is LSF20 laser-beam drilling machine, the machined parameters of this laser apparatus is also not particularly limited, as long as can carry out etching on adhesive tape and be grilled thoroughly by this adhesive tape.
In the present invention, under preferable case, the laser adopted is UV-light, visible or infrared light, and wherein, wavelength region can be 300nm-11000nm, and laser power can be 2W-100W.
In the present invention, more preferably in situation, the laser adopted is infrared laser, and selects 20W optical fiber laser; Optical maser wavelength is preferably 1064nm; Laser power is preferably 8-12W, is more preferably 9-11W, most preferably is 10W; Laser frequency can be preferably 22-28KHz for 20KHz30KHz, is more preferably 25KHz; Laser processing speed can be 800-1200mm/s, is preferably 900-1100mm/s, is more preferably 1000mm/s; Under this parameter, this laser apparatus carries out work, can etch on PI Pressuresensitive Tape, and can burn the predetermined circuit of formation by this PI Pressuresensitive Tape.
According to the present invention, in step (2), before the adhesive tape being formed with circuit is bonded on polyimide film, the method also comprises this polyimide film first through oil removal treatment, wherein, adopt degreasing fluid to carry out oil removal treatment, described degreasing fluid can be NaOH, Na 2cO 3with the mixing solutions of Sodium dodecylbenzene sulfonate, and the volumetric molar concentration of described NaOH can be 0.5-1mol/L, is preferably 0.6-0.9mol/L, is more preferably 0.7-0.8mol/L; Described Na 2cO 3volumetric molar concentration can be 0.5-1.5mol/L, be preferably 0.8-1.2mol/L, be more preferably 0.9-1mol/L; Described Sodium dodecylbenzene sulfonate concentration can be 0.5-1.5g/L, is preferably 0.8-1.2g/L, is more preferably 0.9-1g/L; The condition of described oil removal treatment comprises: except oil temperature can be 45-55 DEG C, be preferably 46-52 DEG C, be more preferably 48-50 DEG C, the time can be 4-8 minute, is preferably 5-6 minute.Then use 50 DEG C of hot washes, then rinse with clear water, dry up stand-by.
According to the present invention, in step (2), the adhesive tape being formed with circuit is bonded on polyimide film, after surface treatment, carry out electroless plating process again, wherein, described surface treatment can comprise first carries out chemical roughen process, then carry out activation treatment, and carry out reduction treatment again.
According to the present invention, adopt chemical roughen liquid to carry out chemical roughen process, and described chemical roughen liquid can be the mixing solutions of sodium hydroxide, hydrazine hydrate and quadrol.
According to the present invention, in described chemical roughen liquid; Wherein, the concentration of described sodium hydroxide can be 20-40g/L, is preferably 25-35g/L, is more preferably 28-32g/L; The concentration of described hydrazine hydrate can be 5-15g/L, is preferably 7-14g/L, is more preferably 8-12g/L; The concentration of described quadrol can be 5-15g/L, is preferably 7-14g/L, is more preferably 8-12g/L.
According to the present invention, the adhesive tape being formed with circuit is bonded on polyimide film, then puts into chemical roughen liquid and carry out chemical roughen process; Wherein, the condition of described chemical roughen process comprises: temperature can be 30-40 DEG C, and the time can be 1-5 minute; Preferably, temperature is 32-38 DEG C, and the time is 1-4 minute; More preferably, temperature is 34-36 DEG C, and the time is 1-3 minute; In the present invention, the present inventor finds through a large amount of scientific experiments, and in this chemical roughen treating processes, temperature and time controls in the scope of above-mentioned restriction, and effect is best, if temperature and time is too high, then and adhesive tape meeting partial exfoliation; If temperature is low and the time is too short, then easy plating leakage during Kapton electroless plating.
According to the present invention, the adhesive tape being formed with circuit is bonded on polyimide film, then puts into chemical roughen liquid and carry out chemical roughen process; Ionic palladium activation solution is adopted to carry out activation treatment again; Wherein, the condition of described activation comprises: temperature can be 25-35 DEG C, and the time can be 1-6 minute; Preferably, temperature is 27-32 DEG C, and the time is 2-5 minute; More preferably, temperature is 28-30 DEG C, and the time is 2-4 minute.
According to the present invention, in described ionic palladium activation solution; Wherein, described ionic palladium activation solution can be the mixing solutions of Palladous chloride, ammonium chloride, dimethyl formamide and aminopyridine.
According to the present invention, when adopting ionic palladium activation solution to carry out activation treatment; Wherein, the concentration of the described Palladous chloride in described ionic palladium activation solution can be 0.01-0.15g/L, is preferably 0.03-0.07g/L, is more preferably 0.04-0.06g/L; The concentration of described ammonium chloride can be 0.1-1.5g/L, is preferably 0.3-0.7g/L, is more preferably 0.4-0.6g/L; The concentration of described dimethyl formamide can be 0.1-1.5g/L, is preferably 0.3-0.7g/L, is more preferably 0.4-0.6g/L; And the concentration of described aminopyridine can be 0.1-1.5g/L, be preferably 0.3-0.7g/L, be more preferably 0.4-0.6g/L.
According to the present invention, the adhesive tape being formed with circuit is bonded on polyimide film, then puts into chemical roughen liquid and carry out chemical roughen process, then adopt ionic palladium activation solution to carry out activation treatment, and adopt reductive agent to carry out reduction treatment again; Wherein, comprise in the condition of described reduction: temperature can be 25-35 DEG C, and the time can be 0.5-1.5 minute; Preferably, temperature is 27-32 DEG C, and the time is 0.8-1.2 minute; More preferably, temperature is 28-30 DEG C, and the time is 0.9-1.1 minute.
According to the present invention, the oxoethanoic acid as reductive agent uses as a solution, and the concentration of glyoxylic acid solution can be 5-15g/L, is preferably 8-12g/L, is more preferably 9-11g/L.
According to the present invention, the adhesive tape being formed with circuit is bonded on polyimide film, then surface treatment is carried out, namely chemical roughen process, activation treatment and reduction treatment is carried out, its object is to electroless metal layer on Kapton, final formation conducting wire, has technological process simple, lower-cost advantage.
According to the present invention, adopt chemical plating fluid to carry out electroless plating process, wherein, described chemical plating fluid can be chemical bronze plating liquid or chemical nickel-plating liquid.
According to the present invention, described chemical bronze plating liquid can be the mixing solutions of EDETATE DISODIUM, yellow prussiate of potash, thiocarbamide, Sodium dodecylbenzene sulfonate, formaldehyde and cupric sulfate pentahydrate.
According to the present invention, in described chemical bronze plating liquid, the concentration of described EDETATE DISODIUM can be 30-40g/L, and the concentration of described yellow prussiate of potash can be 0.001-0.1g/L, is preferably 0.01-0.05g/L; The concentration of described thiocarbamide can be 0.001-0.01g/L, is preferably 0.002-0.008g/L; The concentration of described Sodium dodecylbenzene sulfonate can be 0.001-0.05g/L, is preferably 0.005-0.02g/L; The concentration of described formaldehyde can be 2-4g/L, is preferably 2-3g/L; And the concentration of described cupric sulfate pentahydrate can be 5-10g/L, be preferably 6-8g/L.
According to the present invention, described chemical nickel-plating liquid can be the mixing solutions of single nickel salt, ammonium citrate, sodium-acetate, boric acid, inferior sodium phosphate and thiocarbamide.
According to the present invention, in described chemical nickel-plating liquid, the concentration of described single nickel salt is 15-20g/L, is preferably 16-18g/L; The concentration of described ammonium citrate is 15-25g/L, is preferably 18-22g/L; The concentration of described sodium-acetate is 5-15g/L, is preferably 8-12g/L; The concentration of described boric acid is 15-25g/L, is preferably 18-22g/L; The concentration of described inferior sodium phosphate is 15-25g/L, is preferably 18-22g/L; And the concentration of described thiocarbamide is 0.001-0.01g/L, be preferably 0.002-0.008g/L.
According to the present invention, the temperature of carrying out electroless plating in described chemical plating fluid is not particularly limited, can at room temperature operate, the time of carrying out electroless plating is also not particularly limited, in the present invention, the time of this electroless plating can be decided by time when carrying out electroless plating required for processing " thickness of chemical plating ".
Present invention also offers a kind of polyimide circuits plate prepared by method described above.
The present invention is by being fixed on metallic matrix (such as stainless-steel sheet) by polyimide (PI) Pressuresensitive Tape and/or polypropylene film Pressuresensitive Tape, then incoming line graphic file on laser computer, adjust laser apparatus, laser cabling, burns PI Pressuresensitive Tape and/or polypropylene film Pressuresensitive Tape to form circuit; PI Pressuresensitive Tape after laser cabling and/or polypropylene film Pressuresensitive Tape are bonded to and remove on oily PI film in advance, compress, then Pressuresensitive Tape just can not be covered PI film by the place that laser burns; And then the PI Pressuresensitive Tape bondd and/or polypropylene film Pressuresensitive Tape put into together with PI film PI chemical roughen liquid (adjusting agent) and carry out chemical roughen (surface adjustment), after washing, adopt the activation of ionic palladium activation solution, restore, carry out electroless plating again, remaining formation by the position that PI Pressuresensitive Tape and/or polypropylene film Pressuresensitive Tape bond tentatively appears metal level, tear and be bonded in PI Pressuresensitive Tape on PI film and/or polypropylene film Pressuresensitive Tape, form the polyimide circuits plate being coated with metal level (copper or nickel).
Below will be described in detail the present invention by embodiment.
In the following Examples and Comparative Examples, described laser apparatus is LSF20 laser-beam drilling machine purchased from the model that Chinese workers' laser is produced.Polyimide Pressuresensitive Tape is purchased from Shanghai Wei Guang adhesive article company limited; Polyimide film available from DuPont company; The chemical reagent used is all purchased from Jinhua major company.
Preparation example 1
Polyimide Pressuresensitive Tape is reduced for 4cm × 4cm, polyimide film is reduced for 5cm × 5cm; And
PI film is carried out oil removal treatment, and wherein, the formula of degreasing fluid is as follows: the volumetric molar concentration of NaOH is 0.8mol/L, Na 2cO 3volumetric molar concentration be 1mol/L, the volumetric molar concentration of Sodium dodecylbenzene sulfonate is 1g/L; And except oil temperature be 50 DEG C, the time is 5-6 minute; Then use 50 DEG C of hot washes, then rinse with clear water, and UV-irradiation process, dry up stand-by.
Embodiment 1
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
(1) PI Pressuresensitive Tape is fixed on stainless steel, incoming line graphic file on laser computer, adjust laser apparatus, wherein, optical maser wavelength is 1064 nanometers, and laser power is 10W, and laser frequency is 25Hz, process velocity is that 1000mm/s carries out laser ablation, burns PI adhesive tape and forms circuit;
(2) tear PI Pressuresensitive Tape, this PI Pressuresensitive Tape bonding is fixed on PI film, compresses, make PI Pressuresensitive Tape and PI film being bonded together tightly;
Chemical roughen: wherein, the formula of chemical roughen liquid is as follows: naoh concentration is 30g/L, and the concentration of hydrazine hydrate is 10g/L, and the concentration of quadrol is 10g/L; And the temperature of chemical roughen is 35 DEG C, the time is 3 minutes;
By clean for the sample clean carried out after chemical roughen, then activate, wherein, activation solution adopts ionic palladium activation solution, and activation solution formula is as follows: the concentration of Palladous chloride is 0.05g/L, the concentration of ammonium chloride is 0.5g/L, and the concentration of dimethyl formamide is 0.5g/L, and the concentration of aminopyridine is 0.5g/L; And the temperature of activation is 30 DEG C, the time is 3 minutes;
Reduction: wherein, the glyoxylic acid solution of reductive agent to be concentration be 10g/L, and the temperature of reduction is 30 DEG C, the time is 1 minute;
(3) electroless plating: wherein, the formula of chemical bronze plating liquid is as follows: the concentration of cupric sulfate pentahydrate is 8g/L, the concentration of EDETATE DISODIUM is 35g/L, the concentration of yellow prussiate of potash is 10mg/L, the concentration of thiocarbamide is 0.003g/L, the concentration of Sodium dodecylbenzene sulfonate is 0.008g/L, and the concentration of formaldehyde (mass percent concentration is 37%) is 3g/L; Chemical plating thickeies.
After electroless plating terminates, dry, PI adhesive tape is peeled off from PI film, the circuit the same with the line pattern file that laser computer inputs can be obtained.
The thickness of coating that result prepares electro-coppering is the polyimide circuits plate of 5 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 2
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 1, institute's difference is, in (3) plating process, replaces with following nickel-plating liquid formula;
Wherein, this chemical nickel plating liquid formula is as follows: concentration of nickel sulfate is 18g/L, and ammonium citrate concentration is 20g/L, and sodium acetate concentration is 10g/L, and boric acid concentration is 20g/L, and ortho phosphorous acid na concn is 20g/L, and thiourea concentration is 0.003g/L.
After electroless plating terminates, dry, PI adhesive tape is peeled off from PI film, the circuit the same with the line pattern file that laser computer inputs can be obtained.
The thickness of coating that result prepares electronickelling is the polyimide circuits plate of 5 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 3
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 1, institute's difference is, in step (2):
Chemical roughen: wherein, the formula of chemical roughen liquid is as follows: naoh concentration is 20g/L, and the concentration of hydrazine hydrate is 5g/L, and the concentration of quadrol is 5g/L; And the temperature of chemical roughen is 30 DEG C, the time is 5 minutes;
By clean for the sample clean carried out after chemical roughen, then activate, wherein, activation solution adopts ionic palladium activation solution, and activation solution formula is as follows: the concentration of Palladous chloride is 0.01g/L, the concentration of ammonium chloride is 0.1g/L, and the concentration of dimethyl formamide is 0.1g/L, and the concentration of aminopyridine is 0.1g/L; And the temperature of activation is 25 DEG C, the time is 6 minutes;
Reduction: wherein, the glyoxylic acid solution of reductive agent to be concentration be 5g/L, and the temperature of reduction is 25 DEG C, the time is 1.5 minutes;
After electroless plating terminates, dry, PI adhesive tape is peeled off from PI film, the circuit the same with the line pattern file that laser computer inputs can be obtained.
The thickness of coating that result prepares electro-coppering is the polyimide circuits plate of 4 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 4
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 3, institute's difference is, chemical bronze plating liquid is replaced with the chemical nickel-plating liquid in embodiment 2;
The thickness of coating that result prepares electronickelling is the polyimide circuits plate of 4 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 5
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 1, institute's difference is, in step (2):
Chemical roughen: wherein, the formula of chemical roughen liquid is as follows: naoh concentration is 40g/L, and the concentration of hydrazine hydrate is 15g/L, and the concentration of quadrol is 15g/L; And the temperature of chemical roughen is 40 DEG C, the time is 1 minute;
By clean for the sample clean carried out after chemical roughen, then activate, wherein, activation solution adopts ionic palladium activation solution, and activation solution formula is as follows: the concentration of Palladous chloride is 0.15g/L, the concentration of ammonium chloride is 1.5g/L, and the concentration of dimethyl formamide is 1.5g/L, and the concentration of aminopyridine is 1.5g/L; And the temperature of activation is 35 DEG C, the time is 1 minute;
Reduction: wherein, the glyoxylic acid solution of reductive agent to be concentration be 15g/L, and the temperature of reduction is 35 DEG C, the time is 0.5 minute;
The thickness of coating that result prepares electro-coppering is the polyimide circuits plate of 6 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 6
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 5, institute's difference is, chemical bronze plating liquid is replaced with the chemical nickel-plating liquid in embodiment 2;
The thickness of coating that result prepares electronickelling is the polyimide circuits plate of 6 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 7
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Polyimide circuits plate is prepared according to the method identical with embodiment 1, institute's difference is, in step (3), the formula of chemical plating fluid is as follows: the concentration of cupric sulfate pentahydrate is 5g/L, the concentration of EDETATE DISODIUM is 30g/L, and the concentration of yellow prussiate of potash is 8mg/L, and the concentration of thiocarbamide is 0.001g/L, the concentration of Sodium dodecylbenzene sulfonate is 0.001g/L, and the concentration of formaldehyde (mass percent concentration is 37%) is 2g/L;
The thickness of coating that result prepares electro-coppering is the polyimide circuits plate of 4 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 8
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 7, institute's difference is, chemical bronze plating liquid is replaced with the chemical nickel-plating liquid in embodiment 2;
The thickness of coating that result prepares electronickelling is the polyimide circuits plate of 4 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 9
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Polyimide circuits plate is prepared according to the method identical with embodiment 1, institute's difference is, in step (3), the formula of chemical plating fluid is as follows: the concentration of cupric sulfate pentahydrate is 10g/L, the concentration of EDETATE DISODIUM is 40g/L, and the concentration of yellow prussiate of potash is 12mg/L, and the concentration of thiocarbamide is 0.01g/L, the concentration of Sodium dodecylbenzene sulfonate is 0.01g/L, and the concentration of formaldehyde (mass percent concentration is 37%) is 4g/L;
The thickness of coating that result prepares electro-coppering is the polyimide circuits plate of 6 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Embodiment 10
The present embodiment is used for illustrating the preparation method of polyimide circuits plate of the present invention
Prepare polyimide circuits plate according to the method identical with embodiment 9, institute's difference is, chemical bronze plating liquid is replaced with the chemical nickel-plating liquid in embodiment 2;
The thickness of coating that result prepares electronickelling is the polyimide circuits plate of 6 microns; And
The polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and the simple and environmental protection of this preparation process.
Known from the result above-described embodiment 1-10, the polyimide circuit adopting the preparation method of polyimide circuits plate provided by the invention to make to prepare is meticulousr, and this preparation method is simple, technological process is simpler, decrease prior art preparation and remove in masking process process and chemical reagent that subsequent etch coating need use to the pollution problem of environment, and in subsequent handling, remove polyimide film only need tear gently, different from general removal masking process chemical reagent, simple and environmental protection.
More than describe the preferred embodiment of the present invention in detail; but the present invention is not limited to the detail in above-mentioned embodiment, within the scope of technical conceive of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
It should be noted that in addition, each concrete technical characteristic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode, in order to avoid unnecessary repetition, the present invention illustrates no longer separately to various possible array mode.
In addition, also can carry out arbitrary combination between various different embodiment of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.

Claims (18)

1. a preparation method for polyimide circuits plate, the method comprises the following steps:
(1) laser ablation is carried out to adhesive tape, burn this adhesive tape to form circuit;
(2) adhesive tape being formed with circuit is bonded on polyimide film, after surface treatment, carries out electroless plating process again.
2. method according to claim 1, wherein, in step (1), described adhesive tape is polyimide Pressuresensitive Tape and/or polypropylene film Pressuresensitive Tape.
3. method according to claim 1, wherein, in step (2), described surface treatment comprises first carries out chemical roughen process, then carries out activation treatment, and carries out reduction treatment again.
4. method according to claim 3, wherein, adopt chemical roughen liquid to carry out chemical roughen process, and described chemical roughen liquid is the mixing solutions of sodium hydroxide, hydrazine hydrate and quadrol.
5. method according to claim 4, wherein, in described chemical roughen liquid, the concentration of described sodium hydroxide is 20-40g/L, and the concentration of described hydrazine hydrate is 5-15g/L, and the concentration of described quadrol is 5-15g/L.
6. method according to claim 4, wherein, the condition of described chemical roughen process comprises: temperature is 30-40 DEG C, and the time is 1-5 minute.
7. method according to claim 3, wherein, adopt ionic palladium activation solution to carry out activation treatment, and described ionic palladium activation solution is the mixing solutions of Palladous chloride, ammonium chloride, dimethyl formamide and aminopyridine.
8. method according to claim 7, wherein, in described ionic palladium activation solution, the concentration of described Palladous chloride is 0.01-0.15g/L, the concentration of described ammonium chloride is 0.1-1.5g/L, the concentration of described dimethyl formamide is 0.1-1.5g/L, and the concentration of described aminopyridine is 0.1-1.5g/L.
9. method according to claim 7, wherein, the condition of described activation treatment comprises: temperature is 25-35 DEG C, and the time is 1-6 minute.
10. method according to claim 3, wherein, adopt reductive agent to carry out reduction treatment to it, and described reductive agent is oxoethanoic acid.
11. methods according to claim 10, wherein, the oxoethanoic acid as reductive agent uses as a solution, and the concentration of glyoxylic acid solution is 5-15g/L.
12. methods according to claim 10, wherein, the condition of described reduction treatment comprises: temperature is 25-35 DEG C, and the time is 0.5-1.5 minute.
13. methods according to claim 1, wherein, in step (2), adopt chemical plating fluid to carry out electroless plating process, described chemical plating fluid is chemical bronze plating liquid or chemical nickel-plating liquid.
14. methods according to claim 13, wherein, described chemical bronze plating liquid is the mixing solutions of EDETATE DISODIUM, yellow prussiate of potash, thiocarbamide, Sodium dodecylbenzene sulfonate, formaldehyde and cupric sulfate pentahydrate.
15. methods according to claim 14, wherein, in described chemical bronze plating liquid, the concentration of described EDETATE DISODIUM is 30-40g/L, the concentration of described yellow prussiate of potash is 0.001-0.1g/L, and the concentration of described thiocarbamide is 0.001-0.01g/L, and the concentration of described Sodium dodecylbenzene sulfonate is 0.001-0.05g/L, the concentration of described formaldehyde is 2-4g/L, and the concentration of described cupric sulfate pentahydrate is 5-10g/L.
16. methods according to claim 13, wherein, described chemical nickel-plating liquid is the mixing solutions of single nickel salt, ammonium citrate, sodium-acetate, boric acid, inferior sodium phosphate and thiocarbamide.
17. methods according to claim 16, wherein, in described chemical nickel-plating liquid, the concentration that the concentration of described single nickel salt is 15-20g/L, the concentration of described ammonium citrate is 15-25g/L, the concentration of described sodium-acetate is 5-15g/L, the concentration of described boric acid is 15-25g/L, the concentration of described inferior sodium phosphate is 15-25g/L and described thiocarbamide is 0.001-0.01g/L.
The 18. polyimide circuits plates prepared according to the method in claim 1-17 described in any one.
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CN107699871A (en) * 2017-10-17 2018-02-16 南通赛可特电子有限公司 A kind of technique for preparing copper plate in silicon substrate surface using chemical copper plating solution
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CN110923678A (en) * 2019-12-05 2020-03-27 东莞市正为精密塑胶有限公司 Chemical plating method for mobile phone antenna
CN112111731A (en) * 2020-11-23 2020-12-22 苏州天承化工有限公司 Chemical copper plating solution and preparation method and application thereof

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789549A (en) * 2016-04-25 2016-07-20 吉林大学 Method for preparing electrode on two-dimensional material
CN106179402A (en) * 2016-07-21 2016-12-07 昆明理工大学 A kind of preparation method of nanoporous palladium catalytic membrane
CN107723689A (en) * 2016-08-12 2018-02-23 惠州大亚湾金盛科技有限公司 A kind of ionic palladium activator
CN109252148A (en) * 2017-07-14 2019-01-22 律胜科技股份有限公司 Method for forming metal layer on surface of photosensitive resin
CN109252148B (en) * 2017-07-14 2021-02-26 律胜科技股份有限公司 Method for forming metal layer on surface of photosensitive resin
CN107447207A (en) * 2017-08-01 2017-12-08 苏州天承化工有限公司 A kind of soft board adjustment liquid and method of roughening
CN107699871A (en) * 2017-10-17 2018-02-16 南通赛可特电子有限公司 A kind of technique for preparing copper plate in silicon substrate surface using chemical copper plating solution
CN107699871B (en) * 2017-10-17 2018-08-14 南通赛可特电子有限公司 A kind of technique preparing copper plate in silicon substrate surface using chemical copper plating solution
CN110923678A (en) * 2019-12-05 2020-03-27 东莞市正为精密塑胶有限公司 Chemical plating method for mobile phone antenna
CN112111731A (en) * 2020-11-23 2020-12-22 苏州天承化工有限公司 Chemical copper plating solution and preparation method and application thereof

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