CN105405971A - 相变化记忆体及其制造方法 - Google Patents
相变化记忆体及其制造方法 Download PDFInfo
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- CN105405971A CN105405971A CN201510883879.3A CN201510883879A CN105405971A CN 105405971 A CN105405971 A CN 105405971A CN 201510883879 A CN201510883879 A CN 201510883879A CN 105405971 A CN105405971 A CN 105405971A
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- electrode
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- 230000008859 change Effects 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 33
- 239000010410 layer Substances 0.000 description 86
- 239000003989 dielectric material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- 229910020938 Sn-Ni Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008937 Sn—Ni Inorganic materials 0.000 description 1
- 229910008772 Sn—Se Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201711206635.7A CN107833967B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
CN201510883879.3A CN105405971B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
Applications Claiming Priority (1)
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CN201510883879.3A CN105405971B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
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CN201711206635.7A Division CN107833967B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN105405971A true CN105405971A (zh) | 2016-03-16 |
CN105405971B CN105405971B (zh) | 2018-02-06 |
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CN201711206635.7A Active CN107833967B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
CN201510883879.3A Active CN105405971B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
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CN201711206635.7A Active CN107833967B (zh) | 2015-12-04 | 2015-12-04 | 相变化记忆体及其制造方法 |
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Families Citing this family (1)
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CN112909160B (zh) * | 2021-01-05 | 2022-04-08 | 华中科技大学 | 一种低操作功耗的相变存储单元及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1983615A (zh) * | 2005-11-26 | 2007-06-20 | 尔必达存储器株式会社 | 相变存储器件及其制造方法 |
US20070285962A1 (en) * | 2006-05-23 | 2007-12-13 | Industrial Technology Research Institute | Phase change memory device and fabrication method thereof |
TW200746484A (en) * | 2006-02-25 | 2007-12-16 | Elpida Memory Inc | Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same |
CN101093872A (zh) * | 2006-06-22 | 2007-12-26 | 财团法人工业技术研究院 | 相变存储器元件及其制造方法 |
CN102683585A (zh) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | 集成标准cmos工艺的电阻存储器及其制备方法 |
CN104798201A (zh) * | 2012-11-21 | 2015-07-22 | 美光科技公司 | 用于形成窄垂直柱的方法及具有窄垂直柱的集成电路装置 |
CN105098071A (zh) * | 2015-07-08 | 2015-11-25 | 宁波时代全芯科技有限公司 | 制造相变化记忆体的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101661992B (zh) * | 2008-08-29 | 2014-05-28 | 中国科学院上海微***与信息技术研究所 | 相变存储单元器件的复合电极结构 |
KR20130106659A (ko) * | 2012-03-20 | 2013-09-30 | 에스케이하이닉스 주식회사 | 멀티 레벨을 갖는 상변화 메모리 장치 및 그 제조방법 |
CN103606624B (zh) * | 2013-11-15 | 2017-12-05 | 上海新储集成电路有限公司 | 一种具有异质侧壁结构加热电极的相变存储器及其制备方法 |
-
2015
- 2015-12-04 CN CN201711206635.7A patent/CN107833967B/zh active Active
- 2015-12-04 CN CN201510883879.3A patent/CN105405971B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1983615A (zh) * | 2005-11-26 | 2007-06-20 | 尔必达存储器株式会社 | 相变存储器件及其制造方法 |
TW200746484A (en) * | 2006-02-25 | 2007-12-16 | Elpida Memory Inc | Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same |
US20070285962A1 (en) * | 2006-05-23 | 2007-12-13 | Industrial Technology Research Institute | Phase change memory device and fabrication method thereof |
CN101093872A (zh) * | 2006-06-22 | 2007-12-26 | 财团法人工业技术研究院 | 相变存储器元件及其制造方法 |
CN102683585A (zh) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | 集成标准cmos工艺的电阻存储器及其制备方法 |
CN104798201A (zh) * | 2012-11-21 | 2015-07-22 | 美光科技公司 | 用于形成窄垂直柱的方法及具有窄垂直柱的集成电路装置 |
CN105098071A (zh) * | 2015-07-08 | 2015-11-25 | 宁波时代全芯科技有限公司 | 制造相变化记忆体的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107833967B (zh) | 2020-08-25 |
CN105405971B (zh) | 2018-02-06 |
CN107833967A (zh) | 2018-03-23 |
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Effective date of registration: 20170627 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co.,Ltd. Applicant after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 315195 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: NINGBO ADVANCED MEMORY TECHNOLOGY Corp. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
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Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Co-patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Co-patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Co-patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: Jiangsu times all core storage technology Co.,Ltd. Co-patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 223001 No. 601, Changjiang East Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |
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TR01 | Transfer of patent right | ||
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Effective date of registration: 20220406 Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Patentee after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |