CN105374927A - Thermoelectric module and manufacturing method thereof - Google Patents
Thermoelectric module and manufacturing method thereof Download PDFInfo
- Publication number
- CN105374927A CN105374927A CN201510219955.0A CN201510219955A CN105374927A CN 105374927 A CN105374927 A CN 105374927A CN 201510219955 A CN201510219955 A CN 201510219955A CN 105374927 A CN105374927 A CN 105374927A
- Authority
- CN
- China
- Prior art keywords
- semiconductor element
- type semiconductor
- electrothermal module
- junction surface
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a thermoelectric module and a manufacturing method thereof. The thermoelectric module comprises a lower thermoelectric module, wherein p type and n type semiconductor elements are arranged on the upper part of the lower insulation substrate along the horizontal direction; an upper thermoelectric module, wherein p type and n type semiconductor elements, which are electrically connected, are arranged on the lower part of the upper insulation substrate along the horizontal direction; and a joint part, which joins the p type semiconductor element in the upper thermoelectric module and the p type semiconductor element in the lower thermoelectric module and also joins the n type semiconductor element in the upper thermoelectric module and the n type semiconductor element in the lower thermoelectric module. Through the joint part, the upper part thermoelectric module comprising a thermoelectric semiconductor element and the lower part thermoelectric module comprising a thermoelectric semiconductor element are joined together, thus the thickness of thermoelectric semiconductor element part is multiplied by two; so the temperature difference between two ends of the thermoelectric semiconductor element part is increased, the electro-dynamic potential of the thermoelectric module is increased, and when the thermoelectric module is used as a temperature sensor, the sensitivity of the sensor is improved.
Description
Technical field
The present invention relates to a kind of electrothermal module and manufacture method thereof.
Background technology
Temperature sensor is the necessary parts of the temperature for monitoring the household electrical appliance such as baking box, refrigerator.And in industrial equipment, the monitoring such as accurate temperature maintenance and adjustment are alternatively the necessary conditions for the production of high additive value product.Therefore, can say that the temperature sensor for monitoring temperature in the nearly all field comprising daily life and industrial circle is all necessity.Variform is there is in the temperature sensor in present sales according to temperature range to be determined and resolution etc.
Pyroelectric phenomena can be divided into two large technology, it is categorized as the cooling technology of application peltier effect and utilizes energy resource collecting (energyharvesting) technology of Seebeck effect, and two types all can be described as the important technology of the ups and downs determining enterprise from now on.Especially, on current time point, the global warming that the sharp increase of fossil energy use amount causes and lack of energy problem facilitate the research to the New Regenerated energy.Further, the most of energy dropped into falls with the loss of morphology of heat by all devices and electronic installation.
Therefore, if re-used by the heat energy of loss and be applied to new field, then the good method overcoming energy crisis may be become.As one example, be intended to utilize a large amount of used heat of losing in automobile waste heat, incinerator, steel mill, power station, underground heat, electronic equipment, body temperature etc. and the effort that regenerates output electric energy is studied widely in worldwide.
Especially, thermoelectric power generation is three-dimensional generating, can generate electricity merge, so have very large advantage in the application faced the future with other.In cooling field, make electronic unit be tending towards miniaturization, high electrical power, highly integrated, slimming along with the prosperity of IT industry, this makes caloric value increase, and the heat produced has an impact as the misoperation causing electronic equipment and the key factor that lowers efficiency.Use thermoelectric element to solve such problem, if make full use of noiselessness, the rapidly function such as cooling rate, Local cooling of thermoelectric element, then its application only can increase further.
Thermoelectric element of the prior art is roughly made up of the metal electrode of n-type semiconductor, p-type semiconductor, connection p-n junction and ceramic substrate, and this is called single module.In order to be cooling element or generating element by single module use, electric charge must be generated in N-shaped and p-type semiconductor, and making n-type semiconductor and p-type semiconductor be connected to circuit by electrode.
Therefore, in order to improve the efficiency of single module, needing the various piece being designed to composition module to realize high efficiency and making the efficiency between the various piece of composition module realize optimization each other.Further, because single module has lower performance, the composite module be made up of multiple single module is therefore in fact used to be only common convention.
The single module tandem sequence repeats be made up of p-n is arranged according to service condition and is formed by composite module of the prior art.Each single module is connected by metal electrode, and metal electrode is then connected with ceramic substrate.Because each single module is designed to be parallel to each other from thermal source, therefore from thermal source, the temperature gradient of semi-conducting material itself is identical between single module.
For electrothermal module, in order to improve covering electrodes layer after clinging force applies Ti, Ta, Cr layer on substrate, and form p-type semiconductor element or n-type semiconductor element.This is because the clinging force between the electrode layer be made up of Cu under normal circumstances and silicon substrate is bad, therefore between substrate and electrode layer, insert adhesive layer in order to improving clinging force.Then, carry out using solder material semiconductor element and substrate to be carried out the operation engaged.
And, from the viewpoint of semiconductor element, in order to prevent solder material from causing performance to reduce to semiconductor element diffusion, usually forming diffusion preventing portion with Ni layer, thus preventing solder material to be diffused into semiconductor element.
Use is that the film-type electrothermal module of temperature sensor element usually can form p-type semiconductor element or n-type semiconductor element with film morphology by utilizing plating or sputtering and be formed on substrate.But, when forming semiconductor element with film morphology, consider from operational characteristic, due to very thin thickness, the equilibrating in the short period of time of the temperature therefore between heat absorbing side and heat radiation side, thus make the temperature difference between heat absorbing side and heat radiation side not remarkable.So, film-type electrothermal module has the shortcoming of the finite thickness of the film that can be formed, thus makes the temperature difference between heat absorbing side and heat radiation side not remarkable, therefore cannot improve thermo-electromotive force and cause temperature sensing performance to reduce.
A kind of electrothermal module and the manufacture method thereof that utilize the thermoelectric element of the block materials of nanostructure and comprise this is disclosed in patent documentation described in following prior art document, wherein, multiple mass style base material be made up of nanostructure forms the film of nano thickness and recombines, thus block the route of phonon (phonon), therefore compared with block-shaped (bulktype) in the past, there is higher thermoelectricity exponential quantity, and the manufacturing expense of film-type thermoelectric element can be reduced, and worker ordinal number can be reduced.
[prior art document]
[patent documentation]
Patent documentation 1:KR10-2012-0086190A
Summary of the invention
One embodiment of the present of invention technical problem to be solved is for providing a kind of electrothermal module, this electrothermal module makes the thickness of thermoelectric semiconductor elements become in fact 2 times, thus the temperature difference improved between thermoelectric semiconductor elements two ends, the thermo-electromotive force that temperature difference causes can be improved accordingly.
One embodiment of the present of invention another technical problem to be solved is for providing a kind of electrothermal module manufacture method, this manufacture method makes the thickness of thermoelectric semiconductor elements become in fact 2 times, thus the temperature difference improved between thermoelectric semiconductor elements two ends, the thermo-electromotive force that temperature difference causes can be improved accordingly.
In order to solve the problems of the technologies described above, electrothermal module according to an embodiment of the invention comprises: bottom electrothermal module, and p-type semiconductor element and n-type semiconductor element are arranged in the horizontal direction on the top of bottom insulated substrate; Top electrothermal module, the p-type semiconductor element be electrically connected to each other and n-type semiconductor element are arranged in the horizontal direction in the bottom of upper portion insulating substrate; Junction surface, for the p-type semiconductor element of the p-type semiconductor element of described top electrothermal module with described bottom electrothermal module is engaged, and the n-type semiconductor element of the n-type semiconductor element of described top electrothermal module with described bottom electrothermal module is engaged.
Electrothermal module according to an embodiment of the invention is different from thermopile structure of the prior art, its temperature difference that can be improved between thermoelectric semiconductor elements two ends by the thickness of increase thermoelectric semiconductor elements, thus improves thermo-electromotive force.
Usually, for thin film thermoelectric module, owing to utilizing plating or sputtering and being formed, in manufacturing process, therefore not easily increase component thickness, this makes the finite thickness of the thermoelectric semiconductor elements that can be formed.Therefore for thin film thermoelectric module, because temperature difference is less, the thermo-electromotive force therefore based on Seebeck effect is less, thus less for exporting when temperature sensor in use.
In electrothermal module according to an embodiment of the invention, in order to improve thermo-electromotive force, bottom insulated substrate and upper portion insulating substrate form thermoelectric semiconductor elements respectively by mode in the past with multiple thin layer, thus form bottom electrothermal module and top electrothermal module, then use the junction surface of solder material and so on and engage the thermoelectric semiconductor elements of the film morphology of top electrothermal module and bottom electrothermal module, thus making the thickness of thermoelectric semiconductor elements thin layer become in fact 2 times.Therefore, the thickness in the thermoelectric semiconductor elements portion of electrothermal module is always in fact 2 times of the thickness in the thermoelectric semiconductor elements portion of electrothermal module of the prior art according to an embodiment of the invention.
If adopt electrothermal module according to an embodiment of the invention, then use solder material and the thermoelectric semiconductor elements of the thermoelectric semiconductor elements of top electrothermal module with bottom electrothermal module is engaged, thus making the thickness in thermoelectric semiconductor elements portion become in fact 2 times.Therefore, improve the electromotive force of electrothermal module by the temperature difference increased between thermoelectric semiconductor elements two ends, and when electrothermal module is used as temperature sensor, the sensitivity of temperature sensor can be improved.The electrothermal module of this structure can be applicable to non-contact temperature sensor, cooling and power generation applications field.
By definitely the features and advantages of the present invention will be familiar with following detailed description based on accompanying drawing.
Should illustrate before this, the term used in the specification and claims or word should not be construed as vague generalization and the implication of dictionary, but should can in order to the invention of oneself being described in an optimal manner and defining the principle of term concepts rightly and be interpreted as implication and the concept of technological thought according to the invention based on inventor.
Accompanying drawing explanation
Fig. 1 is the figure of the form for illustration of heat producible in common electrothermal module.
Fig. 2 represents the cutaway view according to the electrothermal module of the first embodiment of the present invention.
Fig. 3 is the cutaway view of the electrothermal module represented according to a second embodiment of the present invention.
Fig. 4 a to Fig. 4 d is for representing the figure for the manufacture of the method for electrothermal module shown in Fig. 3, and it is the technique sectional view that electrothermal module manufacture method according to an embodiment of the invention is shown.
Symbol description
100,200,300: electrothermal module
101,202,302: upper portion insulating substrate
102,204,304: bottom insulated substrate
104,106,108,110,112,218a, 218b, 220,330a, 330b, 332a, 332b, 334: electrode
114,118,206a, 206b, 306a, 306b, 308a, 308b:p type semiconductor element
116,120,212a, 212b, 310a, 310b, 312a, 312b:n type semiconductor element
208a, 208b, 214a, 214b, 314a, 314b, 316a, 316b, 318a, 318b, 320a, 320b: diffusion preventing portion
210,216,322,324,326,328: junction surface
240,340: top electrothermal module
260,360: bottom electrothermal module
250,350: thermoelectric semiconductor elements portion
370: the top electrothermal module being formed with junction surface
Embodiment
Following detailed description in conjunction with the drawings and preferred embodiment, will understand the feature of object of the present invention, specific advantages and novelty more.
Should illustrate before this, the term used in the specification and claims or word should not be construed as vague generalization and the implication of dictionary, but in order to the invention of oneself being described in an optimal manner and appropriately defining the principle of term concepts, thus to can be interpreted as implication and the concept of technological thought according to the invention based on inventor.
In this manual, when Reference numeral being given to the inscape of each accompanying drawing, need notice if identical inscape, also imparting identical Reference numeral even if then illustrate in different drawings as far as possible.
Further, the term such as " first ", " second ", " simultaneously ", " another side " is in order to an inscape and other inscapes are distinguished and used, and inscape is not by described term is limited.
Below, when illustrating of the present invention, omit the explanation that may cause the known technology of unnecessary confusion to purport of the present invention.
Below, the preferred embodiment of the present invention is described in detail with reference to accompanying drawing.
Fig. 1 is the figure of the form for illustration of the heat that may produce in common electrothermal module.
Electrothermal module 100 shown in Fig. 1 comprises p-type semiconductor element 114, n-type semiconductor element 116, p-type semiconductor element 118 and n-type semiconductor element 120 between insulated substrate 101,102, described p-type semiconductor element 114 is electrically connected by copper (Cu) electrode 104 with n-type semiconductor element 116 and forms p-n junction, and described p-type semiconductor element 118 is electrically connected by copper (Cu) electrode 108 with n-type semiconductor element 120 and forms p-n junction.
And n-type semiconductor element 116 and p-type semiconductor element 118 are electronically connected in series by copper electrode 106, and p-type semiconductor element 114 and n-type semiconductor element 120 are connected to copper electrode 110 and copper electrode 112.
Described copper electrode 110,112 is for electric current being applied to electrothermal module 100 or drawing the electrode of electromotive force produced by electrothermal module 100.
If electric field to be applied to the copper electrode 110,112 of electrothermal module 100 shown in Fig. 1, then as shown in Figure 1, the electronics in semiconductor element 114,116,118,120 or hole will respectively to just (+) pole and negative (-) Ghandler motion move.In the case, the electronics in semiconductor element 114,116,118,120 or hole hold mobile before the heat energy that absorbs and moving, based on such principle, electrothermal module 100 can perform refrigerating function.
On the contrary, if the two ends of electrothermal module 100 produce temperature difference, then there is voltage difference and produce thermo-electromotive force, therefore can utilize electrothermal module 100 and produce energy, or when sensing the thermo-electromotive force between copper electrode 110,112, electrothermal module 100 can be used as temperature sensor.
Highly sensitive temperature sensor requires to export higher based on the transducer of variations in temperature.Usually, the heat input q using the terminal voltage Vg that can cause in the closed circuit of thermoelectric element to come from the thermoelectric element represented by mathematical expression 1 and mathematical expression 2
awith heat dissipation capacity q
ddifference.
[mathematical expression 1]
[mathematical expression 2]
Wherein, α
efor Seebeck coefficient, T
hjfor the temperature of high-temperature portion, T
cjfor the temperature of low-temp. portion, r
efor the resistance of thermoelectric element, K
efor the pyroconductivity of thermoelectric element, Δ T
jfor the temperature difference between high-temperature portion and low-temp. portion.
In described mathematical expression 1 and mathematical expression 2, Section 1 is the heat pump effect caused by thermoelectric element, and known its depends on the Seebeck coefficient α of thermoelectric element
ewith applying electric current I.Therefore, from material viewpoint, Section 1 is the key element needing to improve.
Section 2 is the loss that Joule heat causes.Although also heat may be produced in same material, but more heat may be produced in junction surface between dissimilar materials.Especially, due to this square proportional with electric current I, be therefore the part having to improve.
Last item as based on thermally equilibrated part, with pyroconductivity K
ewith temperature difference Δ T
jbe associated, it is the part relating to radiator.
Therefore, if calculate mathematical expression 1 and the difference of mathematical expression 2, then the output P of electric energy can be learnt as mathematical expression 3
g.
[mathematical expression 3]
P
g=q
a-q
d=(α
eΔT
j-r
eI)I
Finally, the terminal voltage V of closed circuit is obtained by following mathematical expression 4
g.
[mathematical expression 4]
V
g=α
eΔT
j-r
eI
From mathematical expression 4, in order to improve the sensitivity of temperature sensor, need to improve the thermo-electromotive force caused by temperature difference.In order to improve thermo-electromotive force, from mathematical expression 4, need to maximize the temperature difference between electrothermal module two ends.
Therefore, in an embodiment of the present invention, use the junction surface of solder material and so on and 2 thermoelectric semiconductor elements are engaged, thus increase the thickness in thermoelectric semiconductor elements portion, temperature difference between the two ends significantly improving thermoelectric semiconductor elements thus, makes the value of the thermo-electromotive force of initiation increase accordingly.
The electrothermal module according to the first embodiment of the present invention shown in Fig. 2 is the single electrothermal module comprising a thermoelectric element, and the electrothermal module according to a second embodiment of the present invention shown in Fig. 3 is the compound electrothermal module that 2 thermoelectric elements are connected in series.
First, with reference to figure 2, the electrothermal module 200 according to the first embodiment of the present invention is described.
Comprising according to the electrothermal module 200 of the first embodiment of the present invention shown in Fig. 2: bottom electrothermal module 260, p-type semiconductor element 206b and n-type semiconductor element 212b is arranged in the horizontal direction on the top of bottom insulated substrate 204; Top electrothermal module 240, the p-type semiconductor element 206a be electrically connected to each other and n-type semiconductor element 212a is arranged in the horizontal direction in the bottom of upper portion insulating substrate 202; Junction surface 210,216, for the p-type semiconductor element 206a of described top electrothermal module 240 is engaged with the p-type semiconductor element 206b of described bottom electrothermal module 260, and the n-type semiconductor element 212a of described top electrothermal module 240 is engaged with the n-type semiconductor element 212b of described bottom electrothermal module 260.
The thickness being formed at the thermoelectric semiconductor elements portion 250 between described upper portion insulating substrate 202 and described bottom insulated substrate 204 is essentially 2 times of the thickness of described p-type semiconductor element 206a, 206b or described n-type semiconductor element 212a, 212b.
And, electrothermal module 200 according to the first embodiment of the present invention also comprises: first electrode 218a, 218b, be formed at the top of described bottom insulated substrate 204, for electric current being applied to described electrothermal module 200 or drawing the electromotive force produced by described electrothermal module 200; Second electrode 220, is formed at the bottom of described upper portion insulating substrate 202, is electrically connected to each other for making the p-type semiconductor element 206a of described top electrothermal module 240 and n-type semiconductor element 212a.
And described junction surface 210,216 is formed by solder bonds material, and this solder bonds material is selected from by the group that Sn, Sn-Ag, Sn-Ag-Bi, Sn-Cu and Sn-Ag-Cu are formed.
And, p-type semiconductor element 206b, 206a of described bottom electrothermal module 260 and described top electrothermal module 240 can comprise more than one p-type semiconductor element film layer respectively, and n-type semiconductor element 212b, 212a of described bottom electrothermal module 260 and described top electrothermal module 240 can comprise more than one n-type semiconductor element film layer respectively.
And, p-type semiconductor element 206b, 206a of described bottom electrothermal module 260 and described top electrothermal module 240 can comprise more than one block-shaped p-type semiconductor element respectively, and n-type semiconductor element 212b, 212a of described bottom electrothermal module 260 and described top electrothermal module 240 can comprise more than one block-shaped n-type semiconductor element respectively.
And, electrothermal module 200 according to the first embodiment of the present invention can also comprise: first diffusion preventing portion 208b, 214b, between the p-type semiconductor element 206b being formed at described bottom electrothermal module 260 and described junction surface 210, and between the n-type semiconductor element 212b being formed at described bottom electrothermal module 260 and described junction surface 216; Second diffusion preventing portion 208a, 214a, between the p-type semiconductor element 206a being formed at described top electrothermal module 240 and described junction surface 210, and between the n-type semiconductor element 212a being formed at described top electrothermal module 240 and described junction surface 216.
If adopt the electrothermal module 200 according to the first embodiment of the present invention formed in the above described manner, then use junction surface 210,216 and 2 thermoelectric semiconductor elements 206a and 206b and 2 thermoelectric semiconductor elements 212a and 212b is engaged, thus the thickness in thermoelectric semiconductor elements portion 250 can be made to become in fact 2 times.So, the temperature difference between thermoelectric semiconductor elements two ends can be made to increase, thus improve the electromotive force of electrothermal module 200, the efficiency of electrothermal module 200 can be improved accordingly and improving SNR.
And, when electrothermal module 200 is used as temperature sensor, the sensitivity of temperature sensor can be improved.The electrothermal module 200 of this structure can also be applied to non-contact temperature sensor, cooling and power generation applications field.
In the first embodiment of the present invention, the semiconductor of SbTe series can be used as p-type semiconductor element 206a, 206b, the semiconductor of BiTe series can be used as n-type semiconductor element 212a, 212b, the materials such as Cu, Al, Ni can be used as electrode 218a, 218b, 220, but embodiments of the invention are not limited thereto.
With reference to figure 3, electrothermal module 300 is according to a second embodiment of the present invention described.
Electrothermal module 300 according to a second embodiment of the present invention shown in Fig. 3 comprises: bottom electrothermal module 360, p-type semiconductor element and n-type semiconductor element repeat to arrange on the top of bottom insulated substrate 304 to (306b and 310b in pairs and 308b and 312b paired) in the horizontal direction, and p-type semiconductor element and n-type semiconductor element are electrically connected on adjacent p-type semiconductor element and n-type semiconductor element to the p-type semiconductor element 308b in 308b and 312b to the n-type semiconductor element 310b in 306b and 310b; Top electrothermal module 340, the p-type semiconductor element be electrically connected to each other and n-type semiconductor element repeat to arrange in the bottom of upper portion insulating substrate 302 to (306a and 310a is paired and 308a and 312a is paired) in the horizontal direction; Junction surface 322,326,324,328, for making p-type semiconductor element 306a, 308a of described top electrothermal module 340 engage with corresponding p-type semiconductor element 306b, 308b of described bottom electrothermal module 360 respectively, and n-type semiconductor element 310a, 312a of described top electrothermal module 340 are engaged respectively with corresponding n-type semiconductor element 310b, 312b of described bottom electrothermal module 360.
The thickness being formed at the thermoelectric semiconductor elements portion 350 between described upper portion insulating substrate 302 and described bottom insulated substrate 304 is essentially 2 times of the thickness of described p-type semiconductor element 306a, 306b, 308a, 308b or described n-type semiconductor element 310a, 310b, 312a, 312b.
And, electrothermal module 300 according to a second embodiment of the present invention also comprises: the first electrode section 330a, 330b, be formed at the top of described bottom insulated substrate 304, for electric current being applied to described electrothermal module 300 or drawing the electromotive force produced by described electrothermal module 300; Second electrode section 334, being formed at the top of described bottom insulated substrate 304, for making the p-type semiconductor element of described bottom electrothermal module 360 and n-type semiconductor element, adjacent p-type semiconductor element and n-type semiconductor element being electrically connected on to the p-type semiconductor element 308b in 308b and 312b to the n-type semiconductor element 310b in 306b and 310b; Third electrode portion 332a, 332b, being formed at the bottom of described upper portion insulating substrate 302, with n-type semiconductor element, p-type semiconductor element 306a, the 308a in (306a and 310a is paired and 308a and 312a is paired) being electrically connected to each other with corresponding n-type semiconductor element 310a, 312a respectively for making the p-type semiconductor element of described top electrothermal module 340.
Described junction surface 322,324,326,328 is formed by solder bonds material, and this solder bonds material is selected from by the group that Sn, Sn-Ag, Sn-Ag-Bi, Sn-Cu and Sn-Ag-Cu are formed.
And, p-type semiconductor element 306a, 306b, 308a, 308b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one p-type semiconductor element film layer respectively, and n-type semiconductor element 310a, 310b, 312a, 312b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one n-type semiconductor element film layer respectively.
And, p-type semiconductor element 306a, 306b, 308a, 308b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one block-shaped p-type semiconductor element respectively, and n-type semiconductor element 310a, 310b, 312a, 312b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one block-shaped n-type semiconductor element respectively.
And, electrothermal module 300 according to a second embodiment of the present invention also comprises: first diffusion preventing portion 314b, 316b, 318b, 320b, be formed between p-type semiconductor element 306b, 308b of described bottom electrothermal module 360 and described junction surface 322,326, and be formed between n-type semiconductor element 310b, 312b of described bottom electrothermal module 360 and described junction surface 324,328; Second diffusion preventing portion 314a, 316a, 318a, 320a, be formed between p-type semiconductor element 306a, 308a of described top electrothermal module 340 and described junction surface 322,326, and be formed between n-type semiconductor element 310a, 312a of described top electrothermal module 340 and described junction surface 324,328.
The electrothermal module of the structure that the electrothermal module 300 according to a second embodiment of the present invention shown in Fig. 3 is connected in series for the electrothermal module 200 shown in 2 Fig. 2.But electrothermal module is not limited thereto and can comprises the electrothermal module be connected in series by electrothermal module 200 shown in m Fig. 2 according to an embodiment of the invention.Wherein, m is the integer of more than 3.
If adopt the electrothermal module 300 according to a second embodiment of the present invention formed in the above described manner, then use junction surface 322,324,326,328 respectively and 2 thermoelectric semiconductor elements 306a and 306b, 310a and 310b, 308a and 308b and 312a and 312b are engaged, thus the thickness in thermoelectric semiconductor elements portion 350 can be made to become in fact 2 times.So, the temperature difference between two ends, thermoelectric semiconductor elements portion can be made to increase, thus the electromotive force of electrothermal module 300 can be improved, the efficiency of electrothermal module 300 can be improved accordingly and improve its performance.
Further, when electrothermal module 300 is used as temperature sensor, the sensitivity of temperature sensor can be improved.The electrothermal module 300 of this structure can also be applied to non-contact temperature sensor, cooling and power generation applications field.
In the second embodiment of the present invention, the semiconductor of SbTe series can be used as p-type semiconductor element 306a, 306b, 308a, 308b, the semiconductor of BiTe series can be used as n-type semiconductor element 310a, 310b, 312a, 312b, the materials such as Cu, Al, Ni can be used as electrode 330a, 330b, 332a, 332b, 334, but embodiments of the invention are not limited thereto.
Fig. 4 a to Fig. 4 d is for representing the figure for the manufacture of the method for electrothermal module 300 shown in Fig. 3, and it is the technique sectional view that electrothermal module manufacture method according to an embodiment of the invention is shown.
First, as shown in fig. 4 a, repeat in the horizontal direction on the top of bottom insulated substrate 304 to arrange that p-type semiconductor element and n-type semiconductor element are to (306b and 310b is paired and 308b and 312b is paired), thus form bottom electrothermal module 360.
P-type semiconductor element and n-type semiconductor element are electrically connected on adjacent p-type semiconductor element and n-type semiconductor element to the p-type semiconductor element 308b in 308b and 312b to the n-type semiconductor element 310b in 306b and 310b.
The step of described formation bottom electrothermal module 360 comprises the steps: to form the first electrode section 330a on the top of described bottom insulated substrate 304, the step of 330b and the second electrode section 334, this first electrode section 330a, 330b is used for electric current being applied to described electrothermal module 300 or drawing the electromotive force produced by described electrothermal module 300, this second electrode section 334 is electrically connected on adjacent p-type semiconductor element and n-type semiconductor element to the p-type semiconductor element 308b in 308b and 312b for making the p-type semiconductor element of described bottom electrothermal module 360 and n-type semiconductor element to the n-type semiconductor element 310b in 306b and 310b, form the step of bottom electrothermal module 360, described first electrode section 330a, 330b and described second electrode section 334 repeat in the horizontal direction arrange that p-type semiconductor element and n-type semiconductor element form bottom electrothermal module 360 to (306b and 310b is paired and 308b and 312b is paired).
And, after formation described bottom electrothermal module 360, p-type semiconductor element 306b, 308b and n-type semiconductor element 310b, 312b of described bottom electrothermal module 360 also form first diffusion preventing portion 314b, 316b, 318b, 320b.
Then, as shown in Figure 4 b, repeat in the horizontal direction on the top of upper portion insulating substrate 302 to arrange that p-type semiconductor element and n-type semiconductor element are to (306a and 310a is paired, and 308a and 312a is paired) and form top electrothermal module 340, this semiconductor element is to comprising the p-type semiconductor element and n-type semiconductor element that are electrically connected to each other, and by junction surface 322, 326, 324, 328 are formed at the p-type semiconductor element 306a being arranged in described top electrothermal module 340, 308a and n-type semiconductor element 310a, on 312a, thus form the top electrothermal module 370 with junction surface.
Described junction surface 322,324,326,328 is formed by solder bonds material, and this solder bonds material is selected from by the group that Sn, Sn-Ag, Sn-Ag-Bi, Sn-Cu and Sn-Ag-Cu are formed.
And, the step forming described top electrothermal module 340 comprises the steps: step third electrode portion 332a, 332b being formed at the top of upper portion insulating substrate 302, and this third electrode portion 332a, 332b are electrically connected to each other with corresponding n-type semiconductor element 310a, 312a p-type semiconductor element 306a, the 308a in (306a and 310a is paired and 308a and 312a is paired) with n-type semiconductor element respectively for making the p-type semiconductor element of described top electrothermal module 340; Form the step of top electrothermal module 340, described third electrode portion 332a, 332b repeat in the horizontal direction arrange that p-type semiconductor element and n-type semiconductor element form top electrothermal module 340 to (306a and 310a paired and 308a and 312a).
And, after formation described top electrothermal module 340, p-type semiconductor element 306a, 308a and n-type semiconductor element 310a, 312a of described top electrothermal module 340 also form second diffusion preventing portion 314a, 316a, 318a, 320a.
Then, as illustrated in fig. 4 c, junction surface 322 will be formed, 324, 326, the top electrothermal module 370 of 328 overturns, thus by means of described junction surface 322, 326, 324, 328 and the p-type semiconductor element 306a of the top electrothermal module 370 at described junction surface will be formed, 308a respectively with the corresponding p-type semiconductor element 306b of described bottom electrothermal module 360, 308b engages, and will the n-type semiconductor element 310a of the top electrothermal module 370 at described junction surface be formed with, 312a respectively with the corresponding n-type semiconductor element 310b of described bottom electrothermal module 360, 312b engages, thus form electrothermal module 300 as shown in figure 4d.
In the electrothermal module 300 formed in the above described manner, the thickness being formed at the thermoelectric semiconductor elements portion 350 between described upper portion insulating substrate 302 and described bottom insulated substrate 304 is essentially 2 times of the thickness of described p-type semiconductor element 306a, 306b, 308a, 308b or described n-type semiconductor element 310a, 310b, 312a, 312b.
And, p-type semiconductor element 306a, 306b, 308a, 308b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one p-type semiconductor element film layer respectively, and n-type semiconductor element 310a, 310b, 312a, 312b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one n-type semiconductor element film layer respectively.
And, p-type semiconductor element 306a, 306b, 308a, 308b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one block-shaped p-type semiconductor element respectively, and n-type semiconductor element 310a, 310b, 312a, 312b of described bottom electrothermal module 360 and described top electrothermal module 340 can comprise more than one block-shaped n-type semiconductor element respectively.
If adopt the manufacture method of electrothermal module according to an embodiment of the invention and electrothermal module, then use solder material and thermoelectric semiconductor elements is engaged, thus making the thickness in thermoelectric semiconductor elements portion become in fact 2 times.So, the temperature difference between two ends, thermoelectric semiconductor elements portion can be made to increase and improve the electromotive force of electrothermal module, and if to be used by electrothermal module be temperature sensor, then can improve the sensitivity of temperature sensor.The electrothermal module of this structure also can be applied to non-contact temperature sensor, cooling and power generation applications field.
Below describe the present invention in detail by specific embodiment, but this is just in order to illustrate the present invention, the present invention is not limited thereto, and those skilled in the art can realize distortion in technological thought of the present invention or improvement is self-evident.
Simple deformation of the present invention and even change all belong to scope of the present invention, will clear understanding concrete protection range of the present invention by claims.
Claims (20)
1. an electrothermal module, comprising:
Bottom electrothermal module, p-type semiconductor element and n-type semiconductor element are arranged in the horizontal direction on the top of bottom insulated substrate;
Top electrothermal module, the p-type semiconductor element be electrically connected to each other and n-type semiconductor element are arranged in the horizontal direction in the bottom of upper portion insulating substrate;
Junction surface, for the p-type semiconductor element of the p-type semiconductor element of described top electrothermal module with described bottom electrothermal module is engaged, and the n-type semiconductor element of the n-type semiconductor element of described top electrothermal module with described bottom electrothermal module is engaged.
2. electrothermal module as claimed in claim 1, wherein, the thickness being formed at the thermoelectric semiconductor elements portion between described upper portion insulating substrate and described bottom insulated substrate is essentially 2 times of the thickness of described p-type semiconductor element or described n-type semiconductor element.
3. electrothermal module as claimed in claim 1, wherein, also comprises:
First electrode, is formed at the top of described bottom insulated substrate, for electric current being applied to described electrothermal module or drawing the electromotive force produced by described electrothermal module;
Second electrode, is formed at the bottom of described upper portion insulating substrate, is electrically connected to each other for the p-type semiconductor element and n-type semiconductor element making described top electrothermal module.
4. electrothermal module as claimed in claim 1, wherein, described junction surface is formed by solder bonds material, and this solder bonds material is selected from by the group that Sn, Sn-Ag, Sn-Ag-Bi, Sn-Cu and Sn-Ag-Cu are formed.
5. electrothermal module as claimed in claim 1, wherein, the p-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one p-type semiconductor element film layer respectively, and the n-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one n-type semiconductor element film layer respectively.
6. electrothermal module as claimed in claim 1, wherein, the p-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one block-shaped p-type semiconductor element respectively, and the n-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one block-shaped n-type semiconductor element respectively.
7. electrothermal module as claimed in claim 1, wherein, also comprises:
First diffusion preventing portion, is formed between the p-type semiconductor element of described bottom electrothermal module and described junction surface and between the n-type semiconductor element of described bottom electrothermal module and described junction surface;
Second diffusion preventing portion, is formed between the p-type semiconductor element of described top electrothermal module and described junction surface and between the n-type semiconductor element of described top electrothermal module and described junction surface.
8. an electrothermal module, comprising:
Bottom electrothermal module, p-type semiconductor element and n-type semiconductor element are to repeating the top being arranged in bottom insulated substrate in the horizontal direction, and the n-type semiconductor element of described p-type semiconductor element and n-type semiconductor element centering is electrically connected on the p-type semiconductor element of adjacent p-type semiconductor element and n-type semiconductor element centering;
Top electrothermal module, the p-type semiconductor element be electrically connected to each other and n-type semiconductor element are to repeating the bottom being arranged in upper portion insulating substrate in the horizontal direction; And
Junction surface, for making the p-type semiconductor element of described top electrothermal module engage with the corresponding p-type semiconductor element of described bottom electrothermal module respectively, and the n-type semiconductor element of described top electrothermal module is engaged respectively with the corresponding n-type semiconductor element of described bottom electrothermal module.
9. electrothermal module as claimed in claim 8, wherein, the thickness being formed at the thermoelectric semiconductor elements portion between described upper portion insulating substrate and described bottom insulated substrate is essentially 2 times of the thickness of described p-type semiconductor element or described n-type semiconductor element.
10. electrothermal module as claimed in claim 8, wherein, also comprises:
First electrode section, is formed at the top of described bottom insulated substrate, for electric current being applied to described electrothermal module or drawing the electromotive force produced by described electrothermal module;
Second electrode section, be formed at the top of described bottom insulated substrate, for the p-type semiconductor element making the n-type semiconductor element of the p-type semiconductor element of described bottom electrothermal module and n-type semiconductor element centering be electrically connected on adjacent p-type semiconductor element and n-type semiconductor element centering; And
Third electrode portion, is formed at the bottom of described upper portion insulating substrate, is electrically connected to each other for the p-type semiconductor element of each p-type semiconductor element and n-type semiconductor element centering that make described top electrothermal module and n-type semiconductor element.
11. electrothermal modules as claimed in claim 8, wherein, described junction surface is formed by solder bonds material, and this solder bonds material is selected from by the group that Sn, Sn-Ag, Sn-Ag-Bi, Sn-Cu and Sn-Ag-Cu are formed.
12. electrothermal modules as claimed in claim 8, wherein, the p-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one p-type semiconductor element film layer respectively, and the n-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one n-type semiconductor element film layer respectively.
13. electrothermal modules as claimed in claim 8, wherein, also comprise:
First diffusion preventing portion, is formed between the p-type semiconductor element of described bottom electrothermal module and described junction surface and between the n-type semiconductor element of described bottom electrothermal module and described junction surface;
Second diffusion preventing portion, is formed between the p-type semiconductor element of described top electrothermal module and described junction surface and between the n-type semiconductor element of described top electrothermal module and described junction surface.
14. 1 kinds of electrothermal module manufacture methods, comprise the steps:
Repeat in the horizontal direction on the top of bottom insulated substrate to arrange p-type semiconductor element and n-type semiconductor element to and form bottom electrothermal module, wherein make the n-type semiconductor element of described p-type semiconductor element and n-type semiconductor element centering be electrically connected on the p-type semiconductor element of adjacent p-type semiconductor element and n-type semiconductor element centering;
Repeat in the horizontal direction on the top of upper portion insulating substrate to arrange p-type semiconductor element and n-type semiconductor element to and form top electrothermal module, wherein said p-type semiconductor element and n-type semiconductor element are to comprising the p-type semiconductor element and n-type semiconductor element that are electrically connected to each other;
The each p-type semiconductor element being arranged in described top electrothermal module or described bottom electrothermal module and each n-type semiconductor element form junction surface; And
By means of described junction surface, the p-type semiconductor element of described top electrothermal module is engaged with the corresponding p-type semiconductor element of described bottom electrothermal module respectively, and the n-type semiconductor element of described top electrothermal module is engaged with the corresponding n-type semiconductor element of described bottom electrothermal module respectively.
15. electrothermal module manufacture methods as claimed in claim 14, wherein, the thickness in the thermoelectric semiconductor elements portion be formed between described upper portion insulating substrate and described bottom insulated substrate is essentially 2 times of the thickness of described p-type semiconductor element or described n-type semiconductor element.
16. electrothermal module manufacture methods as claimed in claim 14, wherein, the step forming described bottom electrothermal module comprises the steps:
First electrode section and the second electrode section are formed at the top of described bottom insulated substrate, wherein said first electrode section is used for electric current being applied to described electrothermal module or drawing the electromotive force produced by described electrothermal module, the p-type semiconductor element of described second electrode section for making the n-type semiconductor element of the p-type semiconductor element of described bottom electrothermal module and n-type semiconductor element centering be electrically connected on adjacent p-type semiconductor element and n-type semiconductor element centering;
Described first electrode section and described second electrode section repeat in the horizontal direction arrange p-type semiconductor element and n-type semiconductor element pair, thus form bottom electrothermal module.
17. electrothermal module manufacture methods as claimed in claim 16, wherein, the step forming described top electrothermal module comprises the steps:
Third electrode portion is formed at the top of described upper portion insulating substrate, this third electrode portion is electrically connected to each other for the p-type semiconductor element and n-type semiconductor element making the p-type semiconductor element of described top electrothermal module and n-type semiconductor element centering;
Described third electrode portion repeats in the horizontal direction arrange p-type semiconductor element and n-type semiconductor element pair, thus form top electrothermal module.
18. electrothermal module manufacture methods as claimed in claim 14, wherein, described junction surface is formed by solder bonds material, and this solder bonds material is selected from by the group that Sn, Sn-Ag, Sn-Ag-Bi, Sn-Cu and Sn-Ag-Cu are formed.
19. electrothermal module manufacture methods as claimed in claim 14, wherein, the p-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one p-type semiconductor element film layer respectively, and the n-type semiconductor element of described bottom electrothermal module and described top electrothermal module comprises more than one n-type semiconductor element film layer respectively.
20. electrothermal module manufacture methods as claimed in claim 14, wherein,
After the step forming described bottom electrothermal module, also comprise the first diffusion preventing portion is formed at described bottom electrothermal module each p-type semiconductor element and each n-type semiconductor element on step;
After the step forming described top electrothermal module, also comprise the second diffusion preventing portion is formed at described top electrothermal module each p-type semiconductor element and each n-type semiconductor element on step.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0110723 | 2014-08-25 | ||
KR1020140110723A KR20160024199A (en) | 2014-08-25 | 2014-08-25 | Thermoelectric module and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105374927A true CN105374927A (en) | 2016-03-02 |
Family
ID=55376915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510219955.0A Pending CN105374927A (en) | 2014-08-25 | 2015-04-30 | Thermoelectric module and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20160024199A (en) |
CN (1) | CN105374927A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019090526A1 (en) * | 2017-11-08 | 2019-05-16 | 南方科技大学 | High-performance thermoelectric device and ultra-fast preparation method therefor |
CN110260556A (en) * | 2019-05-06 | 2019-09-20 | 武汉理工大学 | Thermoelectric cooling device and preparation method thereof |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018038286A1 (en) * | 2016-08-24 | 2018-03-01 | 희성금속 주식회사 | Thermoelectric module |
KR102120273B1 (en) * | 2017-08-18 | 2020-06-08 | 주식회사 엘지화학 | Thermoelectric module and thermoelectric generator |
GB2577572A (en) * | 2018-09-28 | 2020-04-01 | Sumitomo Chemical Co | Thermoelectric device |
KR102598016B1 (en) * | 2018-12-07 | 2023-11-02 | 주식회사 엘지화학 | Thermoelectric element and method for the same |
KR102228971B1 (en) * | 2019-07-12 | 2021-03-17 | 최병대 | a thermoelectric module |
KR102623077B1 (en) * | 2019-09-18 | 2024-01-08 | 주식회사 엘지화학 | Thermoelectric device and method of fabricating the same |
KR20210120557A (en) * | 2020-03-27 | 2021-10-07 | 주식회사 리빙케어 | THERMOElECTRIC GENERATION MODULE, TEG |
KR102314606B1 (en) * | 2020-08-10 | 2021-10-18 | 이상신 | Thermoelectric module and electric device including the same |
CN113571629A (en) * | 2021-06-30 | 2021-10-29 | 浙江先导热电科技股份有限公司 | Thermoelectric module with special external lead electrifying mode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101876947B1 (en) | 2011-01-25 | 2018-07-10 | 엘지이노텍 주식회사 | Thermoelectric Device using Bulk Material of Nano Structure and Thermoelectric Module having The Same, and Method of Manufacture The Same |
-
2014
- 2014-08-25 KR KR1020140110723A patent/KR20160024199A/en not_active Application Discontinuation
-
2015
- 2015-04-30 CN CN201510219955.0A patent/CN105374927A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019090526A1 (en) * | 2017-11-08 | 2019-05-16 | 南方科技大学 | High-performance thermoelectric device and ultra-fast preparation method therefor |
CN110260556A (en) * | 2019-05-06 | 2019-09-20 | 武汉理工大学 | Thermoelectric cooling device and preparation method thereof |
CN110260556B (en) * | 2019-05-06 | 2021-06-08 | 武汉理工大学 | Thermoelectric refrigerating device and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20160024199A (en) | 2016-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105374927A (en) | Thermoelectric module and manufacturing method thereof | |
US20090014047A1 (en) | Thermoelectric element | |
Maduabuchi et al. | Thermally induced delamination of PV-TEG: implication of Leg’s joule and Thomson heating | |
RU2008148931A (en) | LOW SIZED THERMOELECTRICS MADE BY ETCHING SEMICONDUCTOR PLATES | |
US20130118541A1 (en) | Thermoelectric module and method of manufacturing the same | |
JPWO2005117154A1 (en) | High density integrated thin layer thermoelectric module and hybrid power generation system | |
JP3981738B2 (en) | Thermoelectric conversion element | |
US20050139248A1 (en) | Thermoelectricity generator | |
CN103560203A (en) | Simple and efficient film thermobattery structure and manufacturing method thereof | |
CN110024145B (en) | Thermoelectric module and thermoelectric generator | |
US20160247996A1 (en) | Large footprint, high power density thermoelectric modules for high temperature applications | |
CN105318982A (en) | Temperature sensor | |
Ilahi et al. | Design and analysis of thermoelectric material based roof top energy harvesting system for Pakistan | |
US9203010B2 (en) | Apparatuses and systems for embedded thermoelectric generators | |
US20150200098A1 (en) | Low resistivity ohmic contact | |
Bhattacharya et al. | Performance analysis and optimization of a SnSe-based thermoelectric generator | |
US8586854B2 (en) | Thermoelectric conversion element | |
US20170025594A1 (en) | Thermoelectric devices | |
KR102429795B1 (en) | Thermoelectric elemetn and manufacturing method of the same | |
JP2018093152A (en) | Thermoelectric power generation device | |
US10516088B2 (en) | Pin coupling based thermoelectric device | |
Simatupang et al. | Study on various simple power tracking methods for thermoelectric generator | |
EP3886188A1 (en) | Semiconductor thermoelectric generator | |
US20130319491A1 (en) | Electricity generation method using thermoelectric generation element, thermoelectric generation element and manufacturing method thereof, and thermoelectric generation device | |
KR102382321B1 (en) | Thermo electric device and method of fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160302 |