CN105374925B - A kind of LED epitaxial growth laminated circuit board and preparation method thereof based on inorganic matter - Google Patents
A kind of LED epitaxial growth laminated circuit board and preparation method thereof based on inorganic matter Download PDFInfo
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- CN105374925B CN105374925B CN201410418498.3A CN201410418498A CN105374925B CN 105374925 B CN105374925 B CN 105374925B CN 201410418498 A CN201410418498 A CN 201410418498A CN 105374925 B CN105374925 B CN 105374925B
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Abstract
The present invention relates to a kind of LED epitaxial growth laminated circuit board and its manufacturing method based on inorganic matter, including:Central substrate, at least double layer of metal conductive layer and LED lattice adaptation layers；The central substrate is constituted for inorganic matter；There is electrical connection hole in the central substrate, the first conductive metal is filled in the electrical connection hole；There is isolation channel on the metal conducting layer；At least double layer of metal conductive layer deposition is connected on the upper and lower surface of the central substrate by the electrical connection hole；LED lattice adaptation layers are deposited on the surface of the side metal conducting layer for assembling LED wafer；The circuit board side wall protective layer is the W metal layer for each side for being plated on the LED epitaxial growth laminated circuit board, during eliminating subsequent technique and use, the next internal stress of the coefficient of thermal expansion different band of each interlayer in the LED epitaxial growth laminated circuit board.
Description
Technical field
The present invention relates to semiconductor applications more particularly to a kind of LED epitaxial growth laminated circuit boards and its system based on inorganic matter
Preparation Method.
Background technology
Show that product develops to today in traditional LED, resource that is mating or intersecting industry has greatly enriched
With it is perfect, but be used for making LED circuit substrate using FR4 circuit boards because being limited by traditional product structure, therefore in display screen
Resolution ratio improve when to a certain extent when 1MM (for example pel spacing be less than), traditional circuit-board is cannot to meet small ruler completely
Very little, high-precision requirement.
It is currently used in the LED inorganic circuits plate (PCB) in the fields such as street lamp or blast furnace electrode, manufacture and utilization are directed to
It is many difficult, include the manufacturing cost of great number, the problems such as the stability of product.So not promoted on a large scale always.Industry
Also it is constantly explored in such as associated materials details and lamination process details.The manufacture of traditional inorganic PCB is all to pass through height
Warm sintered form is come what is completed, this necessarily leads to the cost problem that highly energy-consuming is brought, and conductive material is all that use is such as golden,
Noble metal as silver, it is excessively high to also result in cost.And the technical difficulty of more core is in fine PCB manufactures and to use process
In material stress influence, it has also become influence product reliability and stability the biggest factor.
Therefore how using common process and conventional material reduction production cost, while the hidden of circuit board stress zone is reduced
Suffer from, is a problem to be solved.
Invention content
The object of the present invention is to provide a kind of LED epitaxial growth laminated circuit boards based on inorganic matter that can overcome drawbacks described above
And preparation method thereof.
In a first aspect, the present invention provides a kind of LED epitaxial growth laminated circuit board based on inorganic matter, including：Center base
Plate, at least double layer of metal conductive layer, LED lattices adaptation layer and circuit board side wall protective layer；
The central substrate is constituted for inorganic matter；
There is electrical connection hole in the central substrate, the first conductive metal is filled in the electrical connection hole；
There is isolation channel on the metal conducting layer；
At least double layer of metal conductive layer deposition passes through the electrical connection on the upper and lower surface of the central substrate
Hole is connected；
LED lattice adaptation layers are deposited on the surface of the side metal conducting layer for growing LED wafer；
The circuit board side wall protective layer is the W metal for each side for being plated on the LED epitaxial growth laminated circuit board
Layer, during eliminating subsequent technique and use, the coefficient of thermal expansion different band of each interlayer in the LED epitaxial growth laminated circuit board
The internal stress come；
Wherein, the metal conducting layer and the first conductive metal are the gold of sputtering or electroplating deposition in the central substrate
Belong to layer structure；The isolation channel is patterned structures of the metal conducting layer after photoetching, etching.
Preferably, deposition has dielectric in the isolation channel of the metal conducting layer.
It is further preferred that the top-level metallic conductive layer isolation channel in deposit dielectric thickness be 10%~
20% top-level metallic conductive layer thickness.
It is further preferred that the top-level metallic conductive layer is separated to form multiple carrying LED wafers by the isolation channel
LED eutectic pads.
Preferably, the bottom of the laminated circuit board has insulating protective layer, and the thickness of the insulating protective layer is 10%
~20% underlying metal conductive layer thickness.
It is further preferred that having pad hole on the insulating protective layer, the second conductive gold is filled in the pad hole
Belong to；After removing insulating protective layer, second conductive metal exposes from the pad hole, formed it is multiple with external chip or
The contact electrode that circuit is electrically connected；The contact electrode is connected with the underlying metal conductive layer of the laminated circuit board,
To form the laminated circuit board and being electrically connected between external chip or circuit.
Preferably, the LED lattices adaptation layer is specially metal or nonmetallic, including Cr, Ni, Au, Ti, Sn, SiC, ZnO
In any one or more.
Preferably, the central substrate is specially：SiC substrate or SiC-Cu composite substrates.
In second aspect, the manufacturer for the LED laminated circuit boards that the present invention provides a kind of as described in above-mentioned first aspect
Method, including：
Conducting medium is plated to the whole plate of central substrate；
Laser holes drilled through processing is carried out to central substrate；
Conducting medium is plated to the whole plate of central substrate；The wherein described through-hole is filled up completely by the conducting medium；
Etching is patterned to the conducting medium of the first surface of the central substrate；
Etching is patterned to the conducting medium of the second surface of the central substrate；
Vapor deposition SiO2, form substrate protective layer；
Etching is patterned to the substrate protective layer of the upper surface of the central substrate, gold is exposed in patterned area
Belong to pad electrode；
Lattice adaptation layer is grown on the metal pad electrode；The lattice structure of the lattice adaptation layer and the LED
Lattice structure it is identical；
Etching removes the SiO of LED laminated circuit boards side2；
In each side plating metal Ni of the LED epitaxial growth laminated circuit board, circuit board side wall protective layer is formed.
Preferably, in vapor deposition SiO2, formed before substrate protective layer, the method is further comprising the steps of：
Vapor deposition SiC forms the filled layer of graphical etch areas and the surface insulation layer of central substrate；
Etching is patterned to the surface insulation layer of the central substrate, is etched in patterned area and exposes conductive be situated between
Matter；
Conducting medium is plated to the whole plate of central substrate；
Etching is patterned to the conducting medium of the first surface of the central substrate；
Etching is patterned to the conducting medium of the second surface of the central substrate.
In the LED epitaxial growth laminated circuit board provided by the invention based on inorganic matter, using manufacturing processes customary and conventional material
Material reduces production cost, and the lattice adaptation processing to match with LED wafer pad is formed by LED lattice adaptation layers, to
The electrical connection being preferably formed between LED wafer and physical connection effectively eliminate use by circuit board side wall protective layer structure
During eliminating subsequent technique and use, the coefficient of thermal expansion different band of each interlayer is come in the LED epitaxial growth laminated circuit board
Internal stress.
Description of the drawings
Fig. 1 is that a kind of cross-section structure of the LED epitaxial growth laminated circuit board based on inorganic matter provided in an embodiment of the present invention shows
It is intended to；
Fig. 2 is the manufacturing method of the LED laminated circuit boards provided in an embodiment of the present invention based on inorganic matter.
Specific implementation mode
The present invention is described in detail with reference to the accompanying drawings and examples.
A kind of LED epitaxial growth laminated circuit board based on inorganic matter of the present invention, is mainly used for LED display, extra small spacing
LED display, ultra high density LED display, the just luminous TVs of LED, the just luminous monitors of LED, LED video walls, LED indication,
LED special lightings etc..
Fig. 1 is a kind of cross-section structure for LED epitaxial growth laminated circuit board based on inorganic matter that the embodiment of the present invention one provides
Schematic diagram.Wherein, the top in figure is the upper surface direction of laminated circuit board, and the lower section in figure is the lower surface of laminated circuit board
Direction.
As shown in Figure 1, the LED epitaxial growth laminated circuit board based on inorganic matter of the present embodiment, including：One layer of central substrate 1,
6, four layers of metal conducting layer 2 of separation layer, LED lattices adaptation layer 5 and circuit board side wall protective layer 7.
Central substrate 1 and separation layer 6 are upper with electrical connection hole 11 respectively, and electrical connection hole 11 is interior to be filled with the first conductive gold
Belong to；
There is isolation channel 21 on metal conducting layer 2, SiC is deposited in isolation channel 21；
Wherein two layers of four layers of metal conducting layer 2 is respectively deposited on the upper and lower surface of central substrate 1, in this two layers of gold medal
The upper and lower surface for belonging to conductive layer 2 respectively has one layer of separation layer 6, then upper and lower respectively with one layer of metal conducting layer 2.
Central substrate 1 can be SiC substrate, can also be the substrate that SiC is combined with other inorganic matters, such as SiC-
The material of Cu composite substrates, separation layer 6 can also be SiC.The SiC layer of central substrate 1 equally play double-level-metal conductive layer 2 it
Between buffer action, therefore formed one layer of metal conducting layer 2, one layer isolation (central substrate 1 or separation layer 6), another layer metal
The structure of conductive layer 2 is electrically connected per between double layer of metal conductive layer 2 by the first conductive metal realization in the electrical connection hole 11
It connects.
Circuit board side wall protective layer 7 is the W metal layer for each side for being plated on the LED epitaxial growth laminated circuit board, is used
During eliminating subsequent technique and use, the coefficient of thermal expansion different band of each interlayer is come in the LED epitaxial growth laminated circuit board
Internal stress.
Wherein, metal conducting layer 2 and the first conductive metal are the metal layer knot of sputtering or electroplating deposition in central substrate 1
Structure；Isolation channel 21 is metal conducting layer 2 in the patterned structures after photoetching, etching.
It is 10%~20% top-level metallic conductive layer that also deposition, which has thickness, in the isolation channel 21 of the metal conducting layer 2 of top layer
The dielectric 3 of thickness.The metal conducting layer 2 of top layer is isolated slot 21 and separates, and forms the LED eutectics of multiple carrying LED wafers
Pad 22.
LED lattices adaptation layer 5 is deposited on LED eutectics pad 22, the lattice structure domain preparation of LED lattices adaptation layer 5
The lattice structure of the LED wafer pad of assembly is consistent, in order to which the physics between LED wafer and laminated circuit board is better achieved
Connection and electrical connection.
Specifically, LED lattices adaptation layer 5 be specially metal or it is nonmetallic be made, can by using vapor deposition, deposition etc. side
Method is made, and material therefor can include but is not limited to Cr, Ni, Au, Ti, Sn, any one or more in SiC, ZnO.
The bottom of laminated circuit board, which also deposits, insulating protective layer 4, and the thickness of insulating protective layer 4 is 10%~20% bottom
Metallic conduction layer thickness.There is pad hole 41 on insulating protective layer 4, the second conductive metal is filled in pad hole 41, when going
After insulating protective layer 4, the second conductive metal exposes from the pad hole 41, forms multiple and external chip or circuit carries out
The contact electrode 42 of electrical connection.
Contact electrode 42 be connected with the metal conducting layer 2 of the bottom of laminated circuit board, to formed laminated circuit board and
Electrical connection between external chip or circuit.
In the present embodiment, 1 thickness of central substrate of central core is 200 μm, and hole machined (Laser is crossed by patterned
Drilling the electrical connection hole 11 in the central substrate 1 of central core) is obtained；Whole plate metal sputtering or electroplating deposition, formation are close to
1 both sides of central core central substrate metal conducting layer 2 and deposited electrical connection hole 11 above-mentioned, metal material is preferably copper,
The metal thickness of 30~35 μm of the thickness of this double layer of metal conductive layer 2, filling electrical connection hole 11 is 200 μm.Double layer of metal is led
Electric layer 2 is patterned etching respectively, forms multiple isolation channels 21；SiC is deposited, is formed in the outside of double layer of metal conductive layer 2
Two layers of central substrate 1, thickness are 50 μm, and deposition SiC is also filled out in isolation channel 21；Figure is carried out to above-mentioned two layers of central substrate 1
After the hole machined excessively of shape, similarly obtains third and fourth layer of metal in the sputtering of the both sides of laminated circuit board or electroplating deposition again and lead
Electric layer 2, thickness are 30-35 μm, and the metal thickness in deposition electrical connection hole 11 is 50 μm；Again to laminated circuit board top and bottom
Metal conducting layer 2 is patterned etching, to laminated circuit board clean later and graphically sputtering or electroplating deposition 5~10
μm dielectric 3.Finally, processing is patterned to the dielectric of bottom surface 3 and obtains pad hole 41, then sputter electroplating deposition
One layer of metal forms multiple contact electrodes 42 being electrically connected with external chip or circuit.
In a preferred example, as shown in Figure 1, laminated circuit board has basic parameter feature below：
Substrate center's layer of laminated circuit board is SiC layer, 200 μm, CTE=6-8ppm/ DEG C of thickness
Permittivity ε 3~4
The line width L and interval S of metal conducting layer be respectively：20~50 μm
LED wafer pad density：4000/((200X200)μm2)
Aperture and pad diameter are respectively：30~50 μm,
Insulation resistance：1.0e+13Ω.m
The coefficient of thermal expansion CTE of laminated circuit board：13-19ppm/℃
Integrated circuit plate thickness：0.7~0.8mm
In another preferred example, as shown in Fig. 2, laminated circuit board has basic parameter feature below：
Substrate center's layer of laminated circuit board is SiC-Cu composite layers, including 185 μm of base coppers and 50 μm of SiC layer.Heat
The coefficient of expansion (CTE)=6~8ppm/ DEG C
Permittivity ε：9.66∽10.03
Copper sheet walks line density L/S：20∽50μm
Pad density：4000/(200X200)μm
Aperture/pad diameter：30/50μm
Insulation resistance：106Ω.m
CTE：4.5ppm/℃
0.7~0.8mm of integrated circuit plate thickness
An embodiment of the present invention provides a kind of LED epitaxial growth laminated circuit board based on inorganic matter, preparation process is simple, can
It realizes and is not necessarily to artificial automated production, to reduce production cost；With good intensity and high-precision, disclosure satisfy that
The pel spacing small size of LED display, high-precision requirement (when such as pel spacing is less than 1MM), while by using LED crystalline substances
Lattice adaptation layer forms the lattice adaptation processing to match with LED wafer pad, to preferably be formed in the electricity between LED wafer
Connection and physical connection.By circuit board side wall protective layer structure, effectively eliminate during eliminating subsequent technique and use,
The internal stress that the coefficient of thermal expansion different band of each interlayer is come in the LED epitaxial growth laminated circuit board.
Correspondingly, the embodiment of the present invention two additionally provides the preparation of the LED epitaxial growth laminated circuit board described in above-described embodiment
Method.Wherein, central substrate is illustrated by taking SiC substrate as an example.
As shown in Fig. 2, the manufacturing method of the present invention includes the following steps：
Step 201, conducting medium is plated to the whole plate of SiC substrate；
Specifically, conducting medium can be the conductive metal including copper.Conductive metal may be used plating or other
Mode is laid in the upper and lower surface of SiC substrate.
Step 202, laser holes drilled through processing is carried out to silicon carbide SiC substrate；
Can carry out laser boring (laser by top surface or by bottom surface specifically, to the SiC substrate after copper facing
Drilling) technique is processed.By laser boring, patterned multiple through-holes are formed in SiC substrate.
Step 203, conducting medium is plated to the whole plate of SiC substrate；The wherein described through-hole is filled up completely by the conducting medium；
Specifically, conducting medium can be the conductive metal including copper.Conductive metal may be used plating or other
Mode is laid in the upper and lower surface of SiC substrate, meanwhile, the through-hole in SiC substrate is filled up completely by conducting medium.Therefore SiC bases
The conducting medium of plate upper and lower surface realizes electrical connection by the conducting medium in through-hole.
Step 204, etching is patterned to the conducting medium of the first surface of SiC substrate；
Specifically, the step of graphical etching, may include：
A, pad pasting is carried out to the first surface of SiC substrate；
B, according to the figure of pre-designed needs, the first surface of SiC substrate is aligned and is exposed；Because being pasted
Film be light-sensitive surface, photocuring can be met, therefore after exposure, the part being exposed conducting medium surface formed one layer guarantor
Shield；
C, develop to SiC substrate, get rid of uncured film；
D, the first surface of the SiC substrate to posting solidification protective film performs etching, by the first of pattern transfer to substrate
On surface；
E, it finally carries out taking off film process, removes solidification protective film.
Step 205, etching is patterned to the conducting medium of the second surface of SiC substrate；
The step is identical as the implementation procedure of above-mentioned steps 203, is carried out just for the second surface of SiC substrate.First
Surface and second surface are respectively the upper and lower surface of SiC substrate.Graphical etching can first carry out upper surface, then to following table
Face carries out, or sequence can also be in turn.
Before step 204 and 205, the surface that will be patterned etching can also be pre-processed respectively.Right
Second surface graphically before etching, can also carry out protection processing to the first surface that graphically etching is completed, avoid
The damage of first surface patterned conductive medium is caused during second surface graphically etches.
Further, the conducting medium of substrate underlying graphicsization etching constitutes multiple for being carried out with external chip or circuit
The contact electrode of electrical connection.
Step 206, vapor deposition SiO2, form substrate protective layer；
Specifically, the SiO of vapor deposition2It is deposited on the upper and lower surface of SiC substrate；
The deposition thickness of substrate protective layer can sets itself as needed, in this programme be preferably 10%~20% top
The thickness of the conducting medium of layer/bottom.
In general, in vapor deposition SiO2Before, can also surface clean pretreatment be carried out to substrate.
Step 207, etching is patterned to the substrate protective layer of the upper surface of the SiC substrate, in patterned area
Interior exposing metal pad electrode；
Specifically, the SiO of the upper surface to SiC substrate2Substrate protective layer is patterned etching, exposes top layer conductive and is situated between
Part in matter as metal pad electrode.Metal pad electrode with LED for being electrically connected.
Step 208, lattice adaptation layer is grown on the metal pad electrode；The lattice structure of the lattice adaptation layer with
The lattice structure of the LED is identical.
Specifically, the material of lattice adaptation layer may include：In SiC, Cr, Ni, Au, Ti, Sn, ZnO, As, Ga, Ge, In
Any one or more.
Step 209, etching removes the SiO of LED laminated circuit boards side2；
Step 210, it in each side plating metal Ni of the LED epitaxial growth laminated circuit board, forms circuit board side wall and protects
Sheath.
Specifically, the SiO for the removal side wall that above-mentioned steps 209 and step 210 describe2Ni protective layers are plated again, it is therefore an objective to
In the technique of follow-up LED lattice growths, in up to 600-1000 degrees Celsius of process environments, it is of heap of stone that LED can be effectively eliminated
The internal stress that the coefficient of thermal expansion of each interlayer is brought in brilliant laminated circuit board, simultaneously because 1452 degree of the fusing point of Ni, than copper (1083
Degree) it is much higher, stability is more preferable in a high temperauture environment, can be to the issuable copper liter of layers of copper in base's circuit inner cord
Magnificent steam is effectively sealed, and pollutes epitaxy growth apparatus to avoid metallic vapour.
The preparation method of above-mentioned steps 201- steps 210 provides the method for preparing LED single layer substrates, if to prepare more
Laminar substrate can execute following steps before above-mentioned steps 206：
1) vapor deposition SiC forms the filled layer of graphical etch areas and the surface insulation layer of SiC substrate；
2) etching is patterned to the surface insulation layer of the SiC substrate, is etched in patterned area and exposes conduction
Medium；
3) conducting medium is plated to the whole plate of SiC substrate；
4) etching is patterned to the conducting medium of the first surface of the SiC substrate；
5) etching is patterned to the conducting medium of the second surface of the SiC substrate.
Above-mentioned steps 1) -5) the substrate number of plies that can be as needed and execution is repeated several times.
The manufacturing method of LED laminated circuit boards provided by the invention based on inorganic matter, using inorganic matter SiC as base
Plate prepares conductive layer and insulating layer on substrate, and lattice adaptation layer is prepared in outermost conductive layer, to be follow-up directly in LED
LED wafer is grown on laminated circuit board provides possibility.This method reduces production using manufacturing processes customary and conventional material
Cost is effectively eliminated by circuit board side wall protective layer structure during eliminating subsequent technique and use, and the LED is of heap of stone
The internal stress that the coefficient of thermal expansion different band of each interlayer is come in brilliant laminated circuit board.
Above-described specific implementation mode has carried out further the purpose of the present invention, technical solution and advantageous effect
It is described in detail, it should be understood that the foregoing is merely the specific implementation mode of the present invention, is not intended to limit the present invention
Protection domain, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial growth laminated circuit board based on inorganic matter, which is characterized in that the circuit board includes：Central substrate, extremely
Few double layer of metal conductive layer, LED lattices adaptation layer and circuit board side wall protective layer；
The central substrate is constituted for inorganic matter；
There is electrical connection hole in the central substrate, the first conductive metal is filled in the electrical connection hole；
There is isolation channel on the metal conducting layer；
At least double layer of metal conductive layer deposition passes through electrical connection hole phase on the upper and lower surface of the central substrate
Connection；
LED lattice adaptation layers are deposited on the surface of the side metal conducting layer for growing LED wafer；
The circuit board side wall protective layer is the W metal layer for each side for being plated on the LED epitaxial growth laminated circuit board, is used
During eliminating subsequent technique and use, the coefficient of thermal expansion different band of each interlayer is come in the LED epitaxial growth laminated circuit board
Internal stress；
Wherein, the metal conducting layer and the first conductive metal are the metal layer of sputtering or electroplating deposition in the central substrate
Structure；The isolation channel is patterned structures of the metal conducting layer after photoetching, etching.
2. the LED epitaxial growth laminated circuit board according to claim 1 based on inorganic matter, which is characterized in that the metal is led
Deposition has dielectric in the isolation channel of electric layer.
3. the LED epitaxial growth laminated circuit board according to claim 2 based on inorganic matter, which is characterized in that in the gold of top layer
The thickness for belonging to the dielectric deposited in the isolation channel of conductive layer is 10%~20% top-level metallic conductive layer thickness.
4. the LED epitaxial growth laminated circuit board according to claim 3 based on inorganic matter, which is characterized in that the top layer
Metal conducting layer is separated the LED eutectic pads to form multiple carrying LED wafers by the isolation channel.
5. the LED epitaxial growth laminated circuit board according to claim 1 based on inorganic matter, which is characterized in that the lamination electricity
The bottom of road plate has insulating protective layer, and the thickness of the insulating protective layer is 10%~20% underlying metal conductive layer thickness.
6. the LED epitaxial growth laminated circuit board according to claim 5 based on inorganic matter, which is characterized in that the insulation is protected
There is pad hole in sheath, the second conductive metal is filled in the pad hole；After removing insulating protective layer, described second leads
Electric metal exposes from the pad hole, forms multiple contact electrodes being electrically connected with external chip or circuit；It is described to connect
Touched electrode is connected with the underlying metal conductive layer of the laminated circuit board, to form the laminated circuit board and external chip
Or the electrical connection between circuit.
7. the LED epitaxial growth laminated circuit board according to claim 1 based on inorganic matter, which is characterized in that the LED lattices
Adaptation layer is specially metal or nonmetallic, including Cr, Ni, Au, Ti, Sn, any one or more in SiC, ZnO.
8. the LED epitaxial growth laminated circuit board according to claim 1 based on inorganic matter, which is characterized in that the center base
Plate is specially：SiC substrate or SiC-Cu composite substrates.
9. a kind of manufacturing method of LED laminated circuit boards as described in any claims of the claims 1-8, which is characterized in that
The method includes：
Conducting medium is plated to the whole plate of central substrate；
Laser holes drilled through processing is carried out to central substrate；
Conducting medium is plated to the whole plate of central substrate；The wherein described through-hole is filled up completely by the conducting medium；
Etching is patterned to the conducting medium of the first surface of the central substrate；
Etching is patterned to the conducting medium of the second surface of the central substrate；
Vapor deposition SiO2, form substrate protective layer；
Etching is patterned to the substrate protective layer of the upper surface of the central substrate, metal welding is exposed in patterned area
Disc electrode；
Lattice adaptation layer is grown on the metal pad electrode；The crystalline substance of the lattice structure and the LED of the lattice adaptation layer
Lattice structure is identical；
Etching removes the SiO of LED laminated circuit boards side2；
In each side plating metal Ni of the LED epitaxial growth laminated circuit board, circuit board side wall protective layer is formed.
10. the manufacturing method of LED laminated circuit boards according to claim 9, which is characterized in that in vapor deposition SiO2, shape
Before substrate protective layer, the method is further comprising the steps of：
Vapor deposition SiC forms the filled layer of graphical etch areas and the surface insulation layer of central substrate；
Etching is patterned to the surface insulation layer of the central substrate, is etched in patterned area and exposes conducting medium；
Conducting medium is plated to the whole plate of central substrate；
Etching is patterned to the conducting medium of the first surface of the central substrate；
Etching is patterned to the conducting medium of the second surface of the central substrate.
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| CN101755496A (en) * | 2007-05-25 | 2010-06-23 | 爱克泰克公司 | Interference shielded electronics module and method for providing the same |
| CN103378274A (en) * | 2012-04-27 | 2013-10-30 | 台达电子工业股份有限公司 | Light-emitting device and manufacturing method thereof |
| CN203492264U (en) * | 2013-09-03 | 2014-03-19 | 严敏 | Multilayer circuit board for LED display |
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| CN101755496A (en) * | 2007-05-25 | 2010-06-23 | 爱克泰克公司 | Interference shielded electronics module and method for providing the same |
| CN101315913A (en) * | 2008-06-12 | 2008-12-03 | 上海芯光科技有限公司 | Light packaging member of power machine with high heat transfer efficiency |
| CN103378274A (en) * | 2012-04-27 | 2013-10-30 | 台达电子工业股份有限公司 | Light-emitting device and manufacturing method thereof |
| CN203492264U (en) * | 2013-09-03 | 2014-03-19 | 严敏 | Multilayer circuit board for LED display |
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