CN105374696B - A method of preparing transparent metal pin configuration using laser ablation - Google Patents
A method of preparing transparent metal pin configuration using laser ablation Download PDFInfo
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- CN105374696B CN105374696B CN201410384560.1A CN201410384560A CN105374696B CN 105374696 B CN105374696 B CN 105374696B CN 201410384560 A CN201410384560 A CN 201410384560A CN 105374696 B CN105374696 B CN 105374696B
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- Prior art keywords
- conductive silver
- segmentation lines
- laser ablation
- metal pin
- pin configuration
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 title claims abstract description 25
- 238000000608 laser ablation Methods 0.000 title claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 50
- 230000011218 segmentation Effects 0.000 claims abstract description 42
- 229910052709 silver Inorganic materials 0.000 claims abstract description 26
- 239000004332 silver Substances 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000003754 machining Methods 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002070 nanowire Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002042 Silver nanowire Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Laser Beam Processing (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The present invention provides a kind of method preparing transparent metal pin configuration using laser ablation, including：1）Transparent base is surface-treated, to increase surface energy, improves adhesion strength；2）Conductive silver paste is provided, conductive silver layer coating is carried out in the transparent substrate surface full page；3）Cutting is carried out to the conductive silver layer of full page according to preset figure using etching laser machining, forms the conductive silver nanowires structure with preset function divided by segmentation lines.The present invention can make the spacing only with 20 microns that can divide two silver wires, while designing redundant line by rational graphic designs, all be improved to appearance consistency and functional reliability.It is worked at the same time using multiple laser heads, working efficiency can be greatly improved.From the point of view of application angle, there is transparent conductive film very wide application field, especially large screen touch-control and transparent membrane to switch.The film of technique productions using the present invention, at low cost, resistant to bending, reliability is high.
Description
Technical field
The present invention relates to a kind of preparation methods of metal lead wire structure, are prepared thoroughly using laser ablation more particularly to a kind of
The method of bright metal lead wire structure.
Background technology
Nano wire is a kind of line of nanoscale (1 nanometer=10-9 meters).It is said differently, nano wire can be defined as
One kind having the one-dimentional structure for being limited in 100 nanometers or less (longitudinal there is no limit) in the horizontal.On this scale, quantum force
It is critically important to learn effect, therefore also referred to as " quantum wire ".According to the difference of composition material, nano wire can be divided into different types,
(such as including metal nanometer line：Ni, Pt, Au, Ag etc.), semiconductor nanowires are (such as：InP, Si, GaN etc.) and insulator nano wire
(such as：SiO2, TiO2 etc.).
Nano silver wire (nano-silver thread) is in addition to the excellent electric conductivity of silver, due to the dimensional effect of Nano grade, also
With excellent translucency, flexible resistance.It is accordingly regarded as being the most possible material for substituting traditional ito transparent electrode, is real
Existing flexible, bent LED show, touch screen etc. provides possibility, and has largely to study and be applied to thin film solar
Battery.Additionally due to the big L/D ratio effect of nano silver wire, makes it also have in the application of conducting resinl, heat-conducting glue etc. prominent
The advantage gone out.
As the substitute products of ito glass, nano-silver thread has many excellent properties, including high transmittance, low resistance
Deng.However, the patterned way limitation of nano-silver thread is more.If cost is very high by the way of photoetching development, if adopted
The mode of silk-screen printing is taken, line width line-spacing is then bigger, can not form precision graphic, this not only influences product appearance (example
Such as the cabling frame of bigger), the fining of functional membrane lines is also influenced, wiring density is reduced.
Invention content
In view of the foregoing deficiencies of prior art, it is prepared thoroughly using laser ablation the purpose of the present invention is to provide a kind of
The method of bright metal lead wire structure, for solving, the graphical cost of nano silver wire is higher in the prior art or line width is asked away from larger etc.
Topic.
In order to achieve the above objects and other related objects, a kind of utilization laser ablation of present invention offer prepares transparent metal and draws
The method of cable architecture, including step：
1) transparent base is provided, transparent base is surface-treated, to increase the surface energy of transparent base, is improved viscous
Attached power；
2) conductive silver paste is provided, conductive silver layer coating is carried out in the transparent substrate surface full page；
3) it uses etching laser machining to carry out cutting to the conductive silver layer of full page according to preset figure, is formed by segmentation lines point
The conductive silver nanowires structure with preset function cut.
A kind of preferred embodiment of the method that transparent metal pin configuration is prepared using laser ablation as the present invention, step
3) segmentation lines include the first segmentation lines, the second segmentation lines and redundancy segmentation lines, and first segmentation lines are in the second segmentation lines
Meander-like intersects successively, and the redundancy segmentation lines pass through each intersection point of first segmentation lines and the second segmentation lines successively, with
The robust division for ensureing conductive silver nanowires structure, avoids short circuit phenomenon.
A kind of preferred embodiment of the method that transparent metal pin configuration is prepared using laser ablation as the present invention, step
3) cutting is carried out to the conductive silver layer of full page simultaneously using multiple laser heads.
A kind of preferred embodiment of the method that transparent metal pin configuration is prepared using laser ablation as the present invention, step
3) line width of the segmentation lines described in is 20~40 microns.
A kind of preferred embodiment of the method that transparent metal pin configuration is prepared using laser ablation as the present invention, step
2) further include the steps that being stirred evenly to conductive silver paste before coating.
A kind of preferred embodiment of the method that transparent metal pin configuration is prepared using laser ablation as the present invention, step
2) coating method used includes the slit coating technique being coated with for large area and the spin coating proceeding being coated with for small area.
A kind of preferred embodiment of the method that transparent metal pin configuration is prepared using laser ablation as the present invention, step
2) in, after the conductive silver layer coating over the transparent substrate, light transmission rate is not less than 90%.
As described above, the present invention provides a kind of method preparing transparent metal pin configuration using laser ablation, including step
Suddenly：1) transparent base is provided, transparent base is surface-treated, to increase the surface energy of transparent base, improves adhesion strength；
2) conductive silver paste is provided, conductive silver layer coating is carried out in the transparent substrate surface full page；3) use etching laser machining according to
Preset figure carries out cutting to the conductive silver layer of full page, forms the conductive silver nanoparticle with preset function divided by segmentation lines
Line construction.The present invention can make the spacing only with 20 microns that can divide two by rational graphic designs
Silver wire, while designing redundant line all improves appearance consistency and functional reliability.Using multiple laser heads while work
Make, working efficiency can be greatly improved.From the point of view of application angle, transparent conductive film has very wide application field, especially
Large screen touch-control and transparent membrane switch.The film of technique productions using the present invention, at low cost, resistant to bending, reliability is high.
Description of the drawings
The step flow that Fig. 1 is shown as the method for preparing transparent metal pin configuration using laser ablation of the present invention is illustrated
Figure.
Fig. 2 is shown as the structure of the segmentation lines of the method that transparent metal pin configuration is prepared using laser ablation of the present invention
Schematic diagram.
Component label instructions
10 conductive silver layers
20 first segmentation lines
30 second segmentation lines
40 redundancy segmentation lines
50 conductive silver nanowires
S11~S13 steps 1)~step 3)
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 2.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 1~Fig. 2, the present embodiment provides a kind of sides preparing transparent metal pin configuration using laser ablation
Method, including step：
As shown in Figure 1, carrying out step 1) S11 first, a transparent base is provided, transparent base is surface-treated, with
Increase the surface energy of transparent base, improves adhesion strength.
As an example, the transparent base includes PET flexible base boards and PI flexible base boards.The surface treatment includes at least
The step of cleaning.
As shown in Figure 1, then carrying out step 2) S12, conductive silver paste is provided, is carried out in the transparent substrate surface full page
Conductive silver layer 10 is coated with.
As an example, further including the steps that being stirred evenly to conductive silver paste before coating.
As an example, the coating method used includes slit coating technique be coated with for large area and for small area
The spin coating proceeding of coating
As an example, after the coating over the transparent substrate of the conductive silver layer 10, light transmission rate is not less than 90%.
As shown in Figures 1 and 2, step 3) S13 is finally carried out, using etching laser machining according to preset figure to full page
Conductive silver layer 10 carries out cutting, forms 50 structure of conductive silver nanowires with preset function divided by segmentation lines.
As an example, the segmentation lines include the first segmentation lines 20, the second segmentation lines 30 and redundancy segmentation lines 40, described the
One segmentation lines 20 with the second segmentation lines 30 are tortuous intersects successively, the redundancy segmentation lines 40 pass through first cutting successively
Each intersection point of line 20 and the second segmentation lines 30 avoids short circuit existing to ensure the robust division of 50 structure of conductive silver nanowires
As.
In the present embodiment, first segmentation lines, 20 and second segmentation lines are crossed to form multiple hexagons, institute more than 30 times
The intersection point that redundancy segmentation lines 40 then pass sequentially through those hexagons is stated, as shown in Figure 2.It should be noted that first cutting
The conductive silver layer 10 is cut into multiple conductive silver nanowires 50 by line 20, the second segmentation lines 30 and redundancy segmentation lines 40, such as
Shown in Fig. 2.
As an example, the line width of the segmentation lines is 20~40 microns.
Furthermore it is possible to carry out cutting to the conductive silver layer 10 of full page simultaneously using multiple laser heads, working efficiency is improved.
As described above, the present invention provides a kind of method preparing transparent metal pin configuration using laser ablation, including step
Suddenly：1) transparent base is provided, transparent base is surface-treated, to increase the surface energy of transparent base, improves adhesion strength；
2) conductive silver paste is provided, carrying out conductive silver layer 10 in the transparent substrate surface full page is coated with；3) it is pressed using etching laser machining
Cutting is carried out to the conductive silver layer 10 of full page according to preset figure, forms the conductive silver with preset function divided by segmentation lines
50 structure of nanowires.The present invention can make the spacing only with 20 microns that can divide by rational graphic designs
Two silver wires are cut, while designing redundant line, appearance consistency and functional reliability are all improved.Using multiple laser heads
It works at the same time, working efficiency can be greatly improved.From the point of view of application angle, transparent conductive film has very wide application field,
Especially large screen touch-control and transparent membrane switch.The film of technique productions using the present invention, it is at low cost, it is resistant to bending, reliably
Property it is high.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (6)
1. a kind of method preparing transparent metal pin configuration using laser ablation, which is characterized in that including step：
1) transparent base is provided, transparent base is surface-treated, to increase the surface energy of transparent base, improves adherency
Power；
2) conductive silver paste is provided, conductive silver layer coating is carried out in the transparent substrate surface full page；
3) etching laser machining is used to carry out cutting to the conductive silver layer of full page according to preset figure, what formation was divided by segmentation lines
Conductive silver nanowires structure with preset function；
Wherein, the segmentation lines of step 3) include the first segmentation lines, the second segmentation lines and redundancy segmentation lines, first cutting
Line with the second segmentation lines are tortuous intersects successively, the redundancy segmentation lines pass through first segmentation lines and the second cutting successively
Each intersection point of line avoids short circuit phenomenon to ensure the robust division of conductive silver nanowires structure.
2. the method according to claim 1 for preparing transparent metal pin configuration using laser ablation, it is characterised in that：Step
It is rapid that cutting 3) is carried out to the conductive silver layer of full page simultaneously using multiple laser heads.
3. the method according to claim 1 for preparing transparent metal pin configuration using laser ablation, it is characterised in that：Step
It is rapid 3) described in segmentation lines line width be 20~40 microns.
4. the method according to claim 1 for preparing transparent metal pin configuration using laser ablation, it is characterised in that：Step
2) rapid further includes the steps that being stirred evenly to conductive silver paste before coating.
5. the method according to claim 1 for preparing transparent metal pin configuration using laser ablation, it is characterised in that：Step
The rapid coating method 2) used includes the slit coating technique being coated with for large area and the spin coating work being coated with for small area
Skill.
6. the method according to claim 1 for preparing transparent metal pin configuration using laser ablation, it is characterised in that：Step
It is rapid 2) in, after conductive silver layer coating over the transparent substrate, light transmission rate is not less than 90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410384560.1A CN105374696B (en) | 2014-08-05 | 2014-08-05 | A method of preparing transparent metal pin configuration using laser ablation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410384560.1A CN105374696B (en) | 2014-08-05 | 2014-08-05 | A method of preparing transparent metal pin configuration using laser ablation |
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| Publication Number | Publication Date |
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| CN105374696A CN105374696A (en) | 2016-03-02 |
| CN105374696B true CN105374696B (en) | 2018-08-28 |
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| CN201410384560.1A Expired - Fee Related CN105374696B (en) | 2014-08-05 | 2014-08-05 | A method of preparing transparent metal pin configuration using laser ablation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114710891A (en) * | 2022-04-02 | 2022-07-05 | 中国科学院福建物质结构研究所 | Apparatus and method for printing circuit on transparent material |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457225A (en) * | 2003-06-05 | 2003-11-19 | 华中科技大学 | Method for producing circuit board by laser ethcing |
| CN102855827A (en) * | 2012-09-26 | 2013-01-02 | 华东师范大学 | Transparent display screen and manufacture method thereof |
| CN203171145U (en) * | 2012-12-28 | 2013-09-04 | 苏州德龙激光股份有限公司 | Device used for etching nano-silver conducting materials |
| CN103293584A (en) * | 2013-05-15 | 2013-09-11 | 北京安通立祥科技发展有限公司 | Polarizer, liquid crystal panel and polarizer manufacturing method |
| CN103460304A (en) * | 2011-12-19 | 2013-12-18 | 松下电器产业株式会社 | Transparent conductive film, substrate with transparent conductive film, and method for manufacturing same |
| CN103907216A (en) * | 2011-10-27 | 2014-07-02 | 默克专利股份有限公司 | Selective etching of a matrix comprising silver nano wires |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2579276A4 (en) * | 2010-05-28 | 2014-02-19 | Shinetsu Polymer Co | Transparent conductive film and conductive substrate using the same |
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2014
- 2014-08-05 CN CN201410384560.1A patent/CN105374696B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457225A (en) * | 2003-06-05 | 2003-11-19 | 华中科技大学 | Method for producing circuit board by laser ethcing |
| CN103907216A (en) * | 2011-10-27 | 2014-07-02 | 默克专利股份有限公司 | Selective etching of a matrix comprising silver nano wires |
| CN103460304A (en) * | 2011-12-19 | 2013-12-18 | 松下电器产业株式会社 | Transparent conductive film, substrate with transparent conductive film, and method for manufacturing same |
| CN102855827A (en) * | 2012-09-26 | 2013-01-02 | 华东师范大学 | Transparent display screen and manufacture method thereof |
| CN203171145U (en) * | 2012-12-28 | 2013-09-04 | 苏州德龙激光股份有限公司 | Device used for etching nano-silver conducting materials |
| CN103293584A (en) * | 2013-05-15 | 2013-09-11 | 北京安通立祥科技发展有限公司 | Polarizer, liquid crystal panel and polarizer manufacturing method |
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