CN105355758A - 一种大功率led的cob封装 - Google Patents
一种大功率led的cob封装 Download PDFInfo
- Publication number
- CN105355758A CN105355758A CN201510827744.5A CN201510827744A CN105355758A CN 105355758 A CN105355758 A CN 105355758A CN 201510827744 A CN201510827744 A CN 201510827744A CN 105355758 A CN105355758 A CN 105355758A
- Authority
- CN
- China
- Prior art keywords
- light source
- metal substrate
- led
- connecting line
- elargol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000003292 glue Substances 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种大功率LED的COB封装，主要解决现有LED封装散热差，成本高，使用寿命短的问题。它包括金属基板(1)、绝缘层(2)、印刷层(3)、光源(4)、连接线(5)和保护胶(6)；其特征在于：金属基板(1)上设有绝缘层(2)，绝缘层(2)上设有印刷层(3)，光源(4)通过银胶粘于金属基板(1)上，且其四周被绝缘层(2)和印刷层(3)包围形成凹槽，凹槽内壁及底面电镀有银，光源(4)通过连接线(5)与印刷层(3)相连，保护胶(6)覆盖于凹槽、光源(4)和连接线(5)上。本发明采用银胶将LED芯片与金属基板粘接，实现了LED芯片的快速散热，降低封装成本的同时增强了LED封装的可靠性，延长了LED的使用寿命。
Description
技术领域
本发明涉及LED技术领域，特别是一种大功率LED的COB封装。
背景技术
发光二极管LED封装是指发光芯片的封装，相比集成电路封装有较大不同，LED的封装不仅要求保护灯芯，而且还要能够透光，而大功率的LED的封装还需要考虑其散热问题。目前LED将电能转化为光能的效率大概只能达到30％到40％，其余的能量主要转化为热能。LED的使用寿命会随着温度的升高而降低，且当温度高于一定程度时，LED的发光效率会降低，因此，大功率LED的散热问题尤为重要。现有SMD(SurfaceMountedDevices)贴片式封装，通过焊锡与导热硅脂粘贴在MCPCB(MetalCorePCB)金属基印制板上，但由于导热硅脂的导热性能有限，接触面积较小，散热性能极其受限。而COB(ChipOnBoard)封装可以将多颗LED芯片直接封装在金属基印制板上，通过金属基印制板直接散热，不仅可以降低成本，还可以增强其散热性能。但是，金属基印制板由金属基板、导热绝缘层以及印刷层构成，印刷层以及金属基板的导热性良好，但导热绝缘层的导热性较差，LED发出的热量在导热绝缘层处受阻，不能很好的将热量散出，在大功率的LED应用中更加受限。
发明内容
本发明的目的在于针对上述现有COB封装的不足，提出了一种大功率LED的COB封装，以增强散热效果，延长LED的使用寿命，保证LED的亮度。
为实现上述目的，本发明包括金属基板1、绝缘层2、印刷层3、光源4、连接线5和保护胶6；其特征在于：金属基板1上设有绝缘层2，绝缘层2上设有印刷层3，光源4通过银胶粘于金属基板1上，且其四周被绝缘层2和印刷层3包围形成凹槽，凹槽内壁及底面电镀有银，光源4通过连接线5与印刷层3相连，保护胶(6)覆盖于凹槽上并覆盖光源4和连接线5。
所述的金属基板1为铝基板或铜基板。
所述的光源4包括正装式或倒装式：正装式由一颗或多颗正装LED芯片的串联或并联或串并联混合的连接方式组成；倒装式光源包括一颗或多颗倒装LED芯片41和氮化铝陶瓷基板42，该一颗或多颗倒装LED芯片41通过串联或并联或串并联混合的方式连接在一起，并通过银胶粘接到氮化铝陶瓷基板42上，氮化铝陶瓷基板42再通过银胶粘接到金属基板1上。
所述的连接线5包括金属丝或金属片，将光源4的正极和负极与印刷层3相连。
所述的保护胶6包括硅胶和荧光粉。
本发明与现有技术相比具有以下优点：
(1)本发明由于采用银胶将LED芯片与金属基板粘接，使得LED芯片的热量可以直接通过银胶传导到金属基板上，导热性更好；
(2)本发明由于采用金属基印制板与LED的一体化封装结构，使得封装成本降低，可靠性更高；
附图说明
图1为本发明采用正装式光源的COB封装结构示意图；
图2为本发明采用倒装式光源的COB封装结构示意图。
具体实施方式
以下结合附图及其实施例对本发明作进一步描述。
实施例1
参照图1，本发明的COB封装，包括金属基板1、绝缘层2、印刷层3、光源4、连接线5和保护胶6；
其中，金属基板1为铝基板或铜基板，其表面上设有绝缘层2，绝缘层2上设有印刷层3。光源4由一颗或多颗正装LED芯片的串联或并联或串并联混合的连接方式组成，并通过银胶粘于金属基板1上。光源4的四周被绝缘层2和印刷层3包围形成凹槽，凹槽内壁及底面电镀有银。连接线5为金属丝或金属片，将光源4的正极和负极与印刷层3相连。保护胶6采用硅胶并掺杂有荧光粉，覆盖于凹槽上并覆盖光源4和连接线5上，起到保护作用。
当LED芯片被点亮时，发出蓝光并激活保护胶6中的荧光粉发光；此过程中产生的热量通过银胶传递到金属基板1上；由于银胶和金属基板1的导热性能均非常优异，LED芯片产生的热量可以很快被传导掉而不会受阻，可以保证其工作在较低的温度，使得LED芯片的发光效率得以保障，与此同时，延长了使用寿命
实施例2
参照图2，金属基板1采用铝基板，其与绝缘层2、印刷层3构成铝基印制板；
光源4采用倒装式结构，它包括一颗或多颗倒装LED芯片(41)和氮化铝陶瓷基板(42)，该一颗或多颗倒装LED芯片(41)通过串联或并联或串并联混合的方式连接在一起，并通过银胶粘接到氮化铝陶瓷基板(42)上，氮化铝陶瓷基板(42)再通过银胶粘接到金属基板(1)上。连接线5采用金属片将印刷层3与陶瓷基板42相连，多条金属片分别通过陶瓷基板42表面的导电材料与倒装LED芯片41的正极和负极相连；保护胶6采用硅胶并掺杂有荧光粉，涂覆于LED芯片41上，并覆盖连接线5，起到保护作用。
当LED被点亮时，发出蓝光并激活保护胶6中的荧光粉发光；此过程中产生的热量通过银胶传递到氮化铝陶瓷基板42上，氮化铝陶瓷基板42又通过银胶将热量传递到金属基板1上；由于银胶、氮化铝陶瓷基板42、金属基板1的导热性能均非常优异，倒装LED芯片41产生的热量可以很快被传导掉而不会受阻，可以保证其工作在较低的温度，使得LED芯片的发光效率得以保障，与此同时，延长了使用寿命。
上仅是本发明的两个最佳实例，不构成对本发明的任何限制，显然在本发明的构思下，可以对其结构进行不同的变更与改进，但这些均在本发明的保护之列。
Claims (5)
1.一种大功率LED的COB封装，包括金属基板(1)、绝缘层(2)、印刷层(3)、光源(4)、连接线(5)和保护胶(6)；其特征在于：金属基板(1)上设有绝缘层(2)，绝缘层(2)上设有印刷层(3)，光源(4)通过银胶粘于金属基板(1)上，且其四周被绝缘层(2)和印刷层(3)包围形成凹槽，凹槽内壁及底面电镀有银，光源(4)通过连接线(5)与印刷层(3)相连，保护胶(6)覆盖于凹槽上并覆盖光源(4)和连接线(5)。
2.根据权利要求1所述的COB封装，其特征在于所述的金属基板(1)为铝基板或铜基板。
3.根据权利要求1所述的COB封装，其特征在于所述的光源(4)包括正装式或倒装式；
所述正装式由一颗或多颗正装LED芯片的串联或并联或串并联混合的连接方式组成；
所述倒装式光源包括一颗或多颗倒装LED芯片(41)和氮化铝陶瓷基板(42)，该一颗或多颗倒装LED芯片(41)通过串联或并联或串并联混合的方式连接在一起，并通过银胶粘接到氮化铝陶瓷基板(42)上，氮化铝陶瓷基板(42)再通过银胶粘接到金属基板(1)上。
4.根据权利要求1所述的COB封装，其特征在于所述的连接线(5)包括金属丝或金属片，将光源(4)的正极和负极与印刷层(3)相连。
5.根据权利要求1所述的COB封装，其特征在于所述的保护胶(6)包括硅胶和荧光粉。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510827744.5A CN105355758A (zh) | 2015-11-25 | 2015-11-25 | 一种大功率led的cob封装 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510827744.5A CN105355758A (zh) | 2015-11-25 | 2015-11-25 | 一种大功率led的cob封装 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105355758A true CN105355758A (zh) | 2016-02-24 |
Family
ID=55331684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510827744.5A Pending CN105355758A (zh) | 2015-11-25 | 2015-11-25 | 一种大功率led的cob封装 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105355758A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057092A (zh) * | 2016-07-30 | 2016-10-26 | 深圳浩翔光电技术有限公司 | 一种用于led显示屏的灯板与驱动板的连接结构 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201204204Y (zh) * | 2008-01-31 | 2009-03-04 | 东莞市科锐德数码光电科技有限公司 | 超大功率led模组光源结构 |
| CN101740707A (zh) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | 预成型荧光粉贴片及其与发光二极管的封装方法 |
| CN102185090A (zh) * | 2011-03-29 | 2011-09-14 | 晶科电子（广州）有限公司 | 一种采用cob封装的发光器件及其制造方法 |
| CN202076265U (zh) * | 2011-04-29 | 2011-12-14 | 深圳市瑞丰光电子股份有限公司 | 一种led模组的封装结构及照明装置 |
| CN202195315U (zh) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | 一种led面光源装置 |
| CN203871360U (zh) * | 2014-07-10 | 2014-10-08 | 深圳市晶台股份有限公司 | 一种抛光铝基板cob封装结构 |
| CN205122633U (zh) * | 2015-11-25 | 2016-03-30 | 海盐丽光电子科技有限公司 | 一种大功率led的cob封装 |
-
2015
- 2015-11-25 CN CN201510827744.5A patent/CN105355758A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201204204Y (zh) * | 2008-01-31 | 2009-03-04 | 东莞市科锐德数码光电科技有限公司 | 超大功率led模组光源结构 |
| CN101740707A (zh) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | 预成型荧光粉贴片及其与发光二极管的封装方法 |
| CN102185090A (zh) * | 2011-03-29 | 2011-09-14 | 晶科电子（广州）有限公司 | 一种采用cob封装的发光器件及其制造方法 |
| CN202076265U (zh) * | 2011-04-29 | 2011-12-14 | 深圳市瑞丰光电子股份有限公司 | 一种led模组的封装结构及照明装置 |
| CN202195315U (zh) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | 一种led面光源装置 |
| CN203871360U (zh) * | 2014-07-10 | 2014-10-08 | 深圳市晶台股份有限公司 | 一种抛光铝基板cob封装结构 |
| CN205122633U (zh) * | 2015-11-25 | 2016-03-30 | 海盐丽光电子科技有限公司 | 一种大功率led的cob封装 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057092A (zh) * | 2016-07-30 | 2016-10-26 | 深圳浩翔光电技术有限公司 | 一种用于led显示屏的灯板与驱动板的连接结构 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20110291135A1 (en) | Light emitting diode package | |
| CN102709278A (zh) | 荧光薄膜平面薄片式led阵列光源 | |
| WO2011147286A1 (zh) | 板上芯片发光二极管结构 | |
| TW201145609A (en) | Light-emitting diode package | |
| CN204118067U (zh) | 直接封装于散热器的led芯片封装架构 | |
| TWI447975B (zh) | 發光二極體晶片之結構、發光二極體封裝基板之結構、發光二極體封裝結構及其製法 | |
| CN101350390A (zh) | 一种led封装结构 | |
| CN105098031A (zh) | 一种覆晶工矿灯cob光源 | |
| CN205122633U (zh) | 一种大功率led的cob封装 | |
| CN201281306Y (zh) | 发光二极管封装结构 | |
| CN105355758A (zh) | 一种大功率led的cob封装 | |
| CN105047787A (zh) | 一种led灯封装支架 | |
| CN201893369U (zh) | 一种发光二极管 | |
| CN205429001U (zh) | 一种led cob光源封装结构 | |
| CN205014297U (zh) | 一种led灯五金支架 | |
| CN203659925U (zh) | 高亮度贴片发光二极管 | |
| TW201429009A (zh) | 發光二極體裝置及散熱基板的製造方法 | |
| CN204257641U (zh) | 具透光平板的发光装置 | |
| CN102544300A (zh) | 一种led封装结构 | |
| CN201757295U (zh) | 一种led灯结构 | |
| CN205069686U (zh) | 一种led点状式cob模组 | |
| CN204577460U (zh) | 采用多层氮化铝基板的led封装结构 | |
| CN102683335A (zh) | 发光二极管封装构造 | |
| CN203312364U (zh) | 一种方形陶瓷cob封装结构 | |
| CN104733587B (zh) | 一种***级封装的led器件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160224 |