CN105355731B - LED chip and preparation method thereof - Google Patents
LED chip and preparation method thereof Download PDFInfo
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- CN105355731B CN105355731B CN201510911331.5A CN201510911331A CN105355731B CN 105355731 B CN105355731 B CN 105355731B CN 201510911331 A CN201510911331 A CN 201510911331A CN 105355731 B CN105355731 B CN 105355731B
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 239000002184 metal Substances 0.000 claims abstract description 106
- 229910052751 metal Inorganic materials 0.000 claims abstract description 106
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910001020 Au alloy Inorganic materials 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000003698 laser cutting Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
A kind of LED chip and preparation method thereof, during making LED chip, metallic reflector and the second metal substrate are performed etching to form the first tunnel and the second tunnel, photoresist is formed in the second tunnel, keep apart the third metal substrate formed in the second metal substrate using photoresist, it realizes LED chip substrate to exempt to cut, leads to the problem of metal melt back when so as to avoid laser cut metal substrate and lead to double born of the same parents or polycrystalline, improve the overall performance of chip.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, more specifically to a kind of LED chip and preparation method thereof.
Background technique
Solid cold light source of the LED illumination device as a new generation, due to long, easy to control and safe with low energy consumption, service life
Therefore the features such as environmentally friendly, is presently the most ideal energy conservation and environmental protection illuminating product, be applicable in various places.
Currently, gallium nitride based LED device has become solid state lighting technical field as novel energy-saving and environmental protection light source
Research hotspot.Also, the gallium nitride based LED device of vertical structure is due to the heat with homogeneous current distribution, electric current generation
Many advantages, such as small, voltage reduces and luminous efficiency is high, has received the extensive concern of people, and its research has been achieved with
A series of progress.
Currently, the cutting separating technology of thin-film LED be all using laser cutting by the way of, and due to substrate need
There is enough thickness just and can guarantee the mechanical support performance of thin-film LED entirety after substrate transfer, to guarantee vertical structure
The stability of chip quality, therefore during thin-film LED carries out laser cutting parameter, often with biggish laser function
Rate cuts substrate, and can imitate because of the calcination of laser can make the brightness of thin-film LED generate decaying in this way.In addition, existing
There is thin-film LED largely to use metal and metal alloy as substrate, thus be also easy to during laser cutting because
For metal melt back and the phenomenon that lead to double born of the same parents or polycrystalline, to influence yield.
Summary of the invention
In view of this, the present invention provides a kind of LED chip and preparation method thereof, to solve in the prior art because laser is cut
Cut the problem of chip generates chip brightness decaying, influences LED core piece performance, be unfavorable for LED chip large-scale production.
To achieve the above object, the invention provides the following technical scheme:
A kind of production method of LED chip, comprising:
First substrate is provided；
Epitaxial layer and metallic reflector are sequentially formed on first substrate, wherein the epitaxial layer includes successively shape
At n type gallium nitride layer, active layer, p-type gallium nitride layer；
The metallic reflector is performed etching away from first one side of substrate surface, is formed and runs through the metallic reflection
Layer deviates from patterned first tunnel on first one side of substrate surface to the epitaxial layer；
Second metal substrate is fixed on the metallic reflector on the surface of first one side of substrate；
First one side of substrate surface area corresponding with the first tunnel upright projection is deviated to second metal substrate
Domain is patterned etching, forms the second tunnel not through second metal substrate；
Photoetching is formed away from first one side of substrate vertical direction along second metal substrate in second tunnel
Glue；
Third metal substrate, the third metal liner are formed away from first one side of substrate in second metal substrate
Bottom is equal with the photoresist thickness；
4th substrate is fixed on the third metal substrate and the photoresist away from first one side of substrate surface
On；
First substrate described in laser lift-off；
N-type electrode is formed away from one side surface of the second metal substrate in the epitaxial layer；
Remove the 4th substrate；
The photoresist is removed, the connection of the second tunnel is formed；
Thimble is set below the third metal substrate, makes the thimble toward the epitaxial layer away from the third metal
The movement of one side of substrate direction forms single LED chip.
Preferably, second tunnel area is less than or equal to the first tunnel area.
Preferably, the etching depth in second tunnel is 5-20um.
Preferably, second metal substrate is welded on away from described first by the metallic reflector using welding procedure
On the surface of one side of substrate, welding layer is formed between second metal substrate and the metallic reflector.
Preferably, the third metal liner is formed on the metallic reflector using electroplating technology or chemical plating process
Bottom, wherein the third metal substrate is isolated by the photoresist.
Preferably, the 4th substrate is bonded in by the third metal substrate using technique for sticking and the photoresist is carried on the back
From on the surface of first one side of substrate.
Preferably, before epitaxial layer formation, a nitride buffer layer is formed.
Preferably, after the first substrate described in laser lift-off, before forming the N-type electrode, to the nitride buffer layer
Carry out roughing in surface.
Preferably, the metallic reflector is one or more of Ag, Al, Pd, Pt, Au, W, Ni, Ti alloy.
Preferably, second metal substrate be high thermal conductivity high-conductive metal substrate, as Cu, Ni, Mo, Mn, Sn, Pd, Pt,
One or more of Au alloy, thickness are less than or equal to 50 microns.
Preferably, the third metal substrate be high thermal conductivity high-conductive metal substrate, as Cu, Ni, Mo, Mn, Sn, Pd, Pt,
One or more of Au alloy, thickness range are 50-200 microns.
Preferably, the 4th substrate be hard substrates, such as sapphire, one of silicon, silicon carbide, hard metal,
Thickness range is 300-1000 microns.
Preferably, the metallic reflector is formed using electron beam evaporation or magnetron sputtering technique.
Preferably, the first tunnel is formed using techniques such as photoetching, development, etchings.
Preferably, the second tunnel is formed using techniques such as photoetching, development, etchings.
Preferably, the N-type electrode is formed using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process.
Correspondingly, the LED chip is made using above-mentioned production method the present invention also provides a kind of LED chip.
Compared with prior art, the technical scheme provided by the invention has the following advantages:
LED chip provided by the present invention and preparation method thereof, by the first metal substrate formed the second tunnel, and
Second tunnel vertically forms photoresist, forms third metal substrate away from the first one side of substrate in the second metal substrate,
Third metal substrate is equal with photoresist thickness, wherein and photoresist keeps apart third metal substrate, in subsequent steps,
Photoresist is removed, the connection of the second tunnel is formed, therefore does not need to carry out laser to third metal substrate in subsequent steps
Cutting, so as to avoid metal substrate in laser cutting process melt back and the problem of lead to double born of the same parents or polycrystalline, improve core
The overall performance of piece.
In addition, the perpendicular projection in the second tunnel and the first tunnel, and there was only the second metal liner of part between every chips
Bottom, metallic reflector are connected with epitaxial layer, and total thickness is very small, as long as thimble deviates from third metal substrate one toward epitaxial layer
Side direction movement, makes third metal substrate stress, the second metal substrate, metallic reflector and epitaxial layer connection will break
It splits, forms single LED chip, do not need to be cut by laser, chip light is caused to the damage of epitaxial layer so as to avoid laser
It declines low with yield, improves the yield of chip.
In addition, strengthening the overall mechanical strength of chip as interim support substrate by the 4th substrate, avoiding
Cause when subsequent the first substrate of laser lift-off chip cracks, desoldering and reduce product yield, improve chip stability and
Yield.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the flow chart for the LED production method that the embodiment of the present invention one provides；
Fig. 2 a-2j is the LED fabrication processing figure that the embodiment of the present invention one provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In conjunction with shown in Fig. 1 to Fig. 2 j, Fig. 1 is a kind of process of the production method of LED chip provided by the embodiments of the present application
Figure, Fig. 2 a to Fig. 2 j are the corresponding structure flow chart of Fig. 1 production method flow chart；Wherein, production method includes:
S1, the first substrate is provided.
With reference to shown in Fig. 2 a, the first substrate 100 is provided, wherein the material of the first substrate is sapphire, silicon, silicon carbide, hard
One of matter metal, thickness range are 300-1000 microns.
S2, epitaxial layer and metallic reflector are formed.
With reference to shown in Fig. 2 b, epitaxial layer 200 is formed on any one surface of the first substrate 100, wherein epitaxial layer includes being located at
The n type gallium nitride layer 201 of first substrate surface away from the active layer 202 of the first one side of substrate and is located at positioned at n type gallium nitride layer
Active layer deviates from the p-type gallium nitride layer 203 of the first one side of substrate.
And deviate from the metallic reflector 300 of the first one side of substrate positioned at epitaxial layer 200.Specifically, being steamed using electron beam
Hair or magnetron sputtering technique evaporation metal reflecting layer 300 on p-type gallium nitride layer 203, metallic reflector 300 by Ag, Al,
Pd, Pt, Au, W, Ni, Ti or its alloy are constituted, and thickness range is about 100nm ~ 500nm, and the first substrate is then placed on nitrogen
Environment high temperature annealing 5min ~ 60min of gas, so that the metallic reflector more dense uniform formed, ohm contact performance is more
Add good.
It should be noted that it is slow to form a gallium nitride before epitaxial layer formation on the first substrate for the embodiment of the present application
Layer is rushed, is not marked in figure.
S3, it is patterned etching to metallic reflector, forms the first tunnel.
With reference to shown in Fig. 2 c, deviate from the first one side of substrate in metallic reflector 300 using techniques such as photoetching, development, etchings
Surface performs etching, and forms patterned the through metallic reflector 300 to epitaxial layer 200 away from the first one side of substrate surface
One tunnel 301.
S4, the second metal substrate is fixed on to metallic reflector on the first one side of substrate surface.
With reference to shown in Fig. 2 d, the second metal substrate 400 is welded on 300 surface of metallic reflector using welding procedure.
Wherein, the second metal substrate is high thermal conductivity high-conductive metal substrate, such as one of Cu, Ni, Mo, Mn, Sn, Pd, Pt, Au or several
Kind alloy, thickness are less than or equal to 50 microns.
In addition, a welding layer is formed between the second metal substrate 400 and metallic reflector 300, without display weldering in figure
Connect layer.Welding layer makes preferably to be fixed together between the second metal substrate and metallic reflector, in the first substrate of subsequent removing
When, further avoid chip desoldering, fragmentation.
S5, it is patterned etching to the second metal substrate, forms the second tunnel.
With reference to shown in Fig. 2 e, deviate from the first substrate one in the second metal substrate 400 using techniques such as photoetching, development, etchings
Side surface region corresponding with 301 upright projection of the first tunnel is patterned etching, is formed not through second metal liner
Second tunnel 401 at bottom 400.Specifically, 401 area of the second tunnel is less than or equal to 301 area of the first tunnel, the quarter in the second tunnel
Erosion depth is 5-20um.The perpendicular projection in second tunnel and the first tunnel, is conducive to be subsequently formed single chip.
S6, photoresist is formed along the second tunnel and forms third metal substrate in the second metal substrate surface.
With reference to shown in Fig. 2 f, deviate from the first one side of substrate vertical direction shape along the second metal substrate 400 in the second tunnel 401
At photoresist 402.Specifically, the application is not particularly limited the type of photoresist, it can be positive photoresist, negative photo
Glue or other photoresists.
In addition, being formed in metallic reflector 400 away from the first one side of substrate surface using electroplating technology or chemical plating process
Third metal substrate 500.Specifically, third metal substrate be high thermal conductivity high-conductive metal substrate, as Cu, Ni, Mo, Mn, Sn,
One or more of Pd, Pt, Au alloy, thickness range are 50-200 microns, and equal with photoresist thickness.Photoresist will
Third metal substrate is kept apart, can be from cutting metal substrate, so as to avoid laser cutting when being subsequently formed single chip
Metal melt back is led to the problem of when metal substrate and leads to double born of the same parents or polycrystalline, improves the overall performance of chip.
S7, the 4th substrate is fixed on to third metal substrate and photoresist on the first one side of substrate surface.
With reference to shown in Fig. 2 g, the 4th substrate 600 is fixed on by photoresist 402 and third metal substrate using the method for bonding
500 on the first one side of substrate surface.Specifically, the 4th substrate is hard substrates, such as sapphire, silicon, silicon carbide, hard gold
One of belong to, thickness range is 300-1000 microns.4th substrate strengthens the whole of chip as interim support substrate
Body mechanical strength is reduced in subsequent technique after the first substrate desquamation, and the metal substrate warpage generated due to internal stress is kept away simultaneously
Exempted to cause in the first substrate of laser lift-off chip cracks, desoldering and reduced product yield, improve chip stability and
Yield.
S8, the first substrate of laser lift-off.
With reference to shown in Fig. 2 h, using laser lift-off by the first substrate 100 from the sur-face peeling of epitaxial layer 200.Removing
First substrate not only improves chip brightness and heat dissipation effect, the overall photoelectric properties for enhancing chip, the also cutting in subsequent chip
The cutting thickness for reducing chip entirety in the process realizes that chip exempts to cut.
It should be noted that the embodiment of the present application after the first substrate of laser lift-off, is formed before N-type electrode, to nitridation
Gallium buffer layer carries out roughing in surface, does not mark in figure.
S9, it forms N-type electrode, remove the 4th substrate and photoresist.
With reference to shown in Fig. 2 i, deviated from using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process in epitaxial layer 200
Second metal substrate, 400 1 side surface forms N-type electrode 700.
In addition, removing the 4th substrate 600 and photoresist 400, the second tunnel connection 403 is formed.
S10, single LED chip is formed.
With reference to shown in Fig. 2 j, thimble 700 is set below third metal substrate 500, makes thimble toward epitaxial layer away from described
The movement of one side direction of third metal substrate forms single LED chip.
Correspondingly, LED chip uses system provided by the above embodiment the embodiment of the present application also provides a kind of LED chip
It is made as method.
A kind of LED chip provided by the embodiments of the present application and preparation method thereof, comprising: the first substrate is provided；Described
Sequentially form epitaxial layer and metallic reflector on one substrate, wherein the epitaxial layer include the n type gallium nitride layer sequentially formed,
Active layer, p-type gallium nitride layer；The metallic reflector is performed etching away from first one side of substrate surface, formation runs through
The metallic reflector deviates from patterned first tunnel on first one side of substrate surface to the epitaxial layer；By the second gold medal
Belong to substrate and is fixed on the metallic reflector on the surface of first one side of substrate；Institute is deviated to second metal substrate
It states the first one side of substrate surface region corresponding with the first tunnel upright projection and is patterned etching, formed not through described the
Second tunnel of two metal substrates；It is vertical away from first one side of substrate along second metal substrate in second tunnel
Direction forms photoresist；Third metal substrate is formed away from first one side of substrate in second metal substrate, described the
Three metal substrates are equal with the photoresist thickness；4th substrate is fixed on the third metal substrate and photoresist back
From on the surface of first one side of substrate；First substrate described in laser lift-off；Deviate from second metal liner in the epitaxial layer
One side surface of bottom forms N-type electrode；Remove the 4th substrate；The photoresist is removed, the connection of the second tunnel is formed；Described in
The connection of second tunnel cleaves second metal substrate and the epitaxial layer, forms single LED chip.
As shown in the above, technical solution provided by the embodiments of the present application, by forming second in the first metal substrate
Tunnel, and photoresist is vertically formed in the second tunnel, third is formed away from the first one side of substrate in the second metal substrate
Metal substrate, third metal substrate are equal with photoresist thickness, wherein photoresist keeps apart third metal substrate, subsequent
The step of in, photoresist is removed, the connection of the second tunnel is formed, therefore is not needed in subsequent steps to third metal substrate
Be cut by laser, so as to avoid metal substrate in laser cutting process melt back and the problem of lead to double born of the same parents or polycrystalline,
Improve the overall performance of chip.
In addition, the perpendicular projection in the second tunnel and the first tunnel, and there was only the second metal liner of part between every chips
Bottom, metallic reflector are connected with epitaxial layer, and total thickness is very small, as long as thimble deviates from third metal substrate one toward epitaxial layer
Side direction movement, makes third metal substrate stress, the second metal substrate, metallic reflector and epitaxial layer connection will break
It splits, forms single LED chip, do not need to be cut by laser, chip light is caused to the damage of epitaxial layer so as to avoid laser
It declines low with yield, improves the yield of chip.
In addition, strengthening the overall mechanical strength of chip as interim support substrate by the 4th substrate, avoiding
Cause when subsequent the first substrate of laser lift-off chip cracks, desoldering and reduce product yield, improve chip stability and
Yield.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (16)
1. a kind of production method of LED chip characterized by comprising
First substrate is provided；
Epitaxial layer and metallic reflector are sequentially formed on first substrate, wherein the epitaxial layer includes the N sequentially formed
Type gallium nitride layer, active layer, p-type gallium nitride layer；
The metallic reflector is performed etching away from first one side of substrate surface, is formed through the metallic reflector extremely
The epitaxial layer deviates from patterned first tunnel on first one side of substrate surface；
Second metal substrate is welded on the surface of first one side of substrate by the metallic reflector using welding procedure,
Welding layer is formed between second metal substrate and the metallic reflector；
To second metal substrate away from first one side of substrate surface region corresponding with the first tunnel upright projection into
The graphical etching of row, forms the second tunnel not through second metal substrate；
Photoresist is formed away from first one side of substrate vertical direction along second metal substrate in second tunnel；
Second metal substrate away from first one side of substrate formed third metal substrate, the third metal substrate with
The photoresist thickness is equal；
4th substrate is fixed on the third metal substrate and the photoresist on the surface of first one side of substrate；
First substrate described in laser lift-off；
N-type electrode is formed away from one side surface of the second metal substrate in the epitaxial layer；
Remove the 4th substrate；
The photoresist is removed, the connection of the second tunnel is formed；
Thimble is set below the third metal substrate, makes the thimble toward the epitaxial layer away from the third metal substrate
The movement of one side direction forms single LED chip.
2. the production method of LED chip according to claim 1, which is characterized in that second tunnel area be less than etc.
In the first tunnel area.
3. the production method of LED chip according to claim 1, which is characterized in that the etching depth in second tunnel
For 5-20um.
4. the production method of LED chip according to claim 1, which is characterized in that use electroplating technology or chemical plating work
Skill forms the third metal substrate on the metallic reflector, wherein the third metal substrate by the photoresist every
From.
5. the production method of LED chip according to claim 1, which is characterized in that use technique for sticking by the described 4th
Substrate is bonded in the third metal substrate and the photoresist on the surface of first one side of substrate.
6. the production method of LED chip according to claim 1, which is characterized in that before epitaxial layer formation, shape
At a nitride buffer layer.
7. the production method of LED chip according to claim 6, which is characterized in that the first substrate described in laser lift-off
Afterwards, before forming the N-type electrode, roughing in surface is carried out to the nitride buffer layer.
8. the production method of LED chip according to claim 1, which is characterized in that the metallic reflector be Ag, Al,
One or more of Pd, Pt, Au, W, Ni, Ti alloy.
9. the production method of LED chip according to claim 1, which is characterized in that second metal substrate is led for height
Hot high-conductive metal substrate, is one or more of Cu, Ni, Mo, Mn, Sn, Pd, Pt, Au alloy, and thickness is less than or equal to 50
Micron.
10. the production method of LED chip according to claim 1, which is characterized in that the third metal substrate is led for height
Hot high-conductive metal substrate is one or more of Cu, Ni, Mo, Mn, Sn, Pd, Pt, Au alloy, thickness range 50-
200 microns.
11. the production method of LED chip according to claim 1, which is characterized in that the 4th substrate is hard lining
Bottom is sapphire, and one of silicon, silicon carbide, hard metal, thickness range is 300-1000 microns.
12. the production method of LED chip according to claim 1, which is characterized in that the metallic reflector is using electricity
What beamlet evaporation or magnetron sputtering technique were formed.
13. the production method of LED chip according to claim 1, which is characterized in that use photoetching, development, etch process
Form the first tunnel.
14. the production method of LED chip according to claim 1, which is characterized in that use photoetching, development, etch process
Form the second tunnel.
15. the production method of LED chip according to claim 1, which is characterized in that the N-type electrode is using electronics
Beam vapor deposition, magnetron sputtering, plating or chemical plating process are formed.
16. a kind of LED chip, which is characterized in that the LED chip is using production described in claim 1~15 any one
Method is made.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945866A (en) * | 2005-10-05 | 2007-04-11 | 三星电机株式会社 | Method for manufacturing vertically structured light emitting diode |
| CN102110746A (en) * | 2009-12-29 | 2011-06-29 | 比亚迪股份有限公司 | Method for segmenting LED wafer |
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| US6818532B2 (en) * | 2002-04-09 | 2004-11-16 | Oriol, Inc. | Method of etching substrates |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945866A (en) * | 2005-10-05 | 2007-04-11 | 三星电机株式会社 | Method for manufacturing vertically structured light emitting diode |
| CN102110746A (en) * | 2009-12-29 | 2011-06-29 | 比亚迪股份有限公司 | Method for segmenting LED wafer |
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